Semiconductor package, semiconductor device, and method for manufacturing semiconductor package

Abstract

Provided is a semiconductor package in which a semiconductor chip is connected by wire bonding, wherein problems at the time of manufacturing and mounting are solved.　The semiconductor package is provided with a semiconductor chip, a substrate, a rib material, a transparent member, and a frame material. The substrate is connected to a light-receiving surface of the semiconductor chip by means of a bonding wire. The rib material is formed along the outer circumference of the light-receiving surface of the semiconductor chip. The frame material covers a lateral surface of the transparent member and / or a section of a rear surface that is a surface which is one of the two surfaces of the transparent member and which does not correspond to the light-receiving surface. A sealing resin seals lateral surfaces of the semiconductor chip.

Description

Semiconductor package, semiconductor device, and method for manufacturing semiconductor package

[0001] The present technology relates to a semiconductor package, and more particularly to a semiconductor package in which wire bonding is performed, a semiconductor device, and a method for manufacturing the semiconductor package.

[0002] Wire bonding has been widely used to electrically connect a semiconductor substrate and a semiconductor chip because of its low cost and high flexibility. For example, a semiconductor package has been proposed in which the semiconductor chip is wire-bonded after glass mounting and then sealed in two stages (see, for example, Patent Document 1). During sealing, the cavity is sealed with a first sealing resin that is shorter than the glass, and then the sides of the glass are sealed with a second sealing resin.

[0003] Patent No. 5635661

[0004] The above-mentioned conventional technology aims to reduce pressure on the wires and semiconductor chips by performing sealing in two stages. However, the above-mentioned conventional technology can cause various problems during the manufacturing and mounting of semiconductor packages. For example, during manufacturing, stress may be concentrated on the side of the glass due to shrinkage of the sealing resin, which may cause cracks in the glass. Alternatively, during mounting, the customer may need to remove the glass, which can be difficult to do.

[0005] This technology was developed in light of these circumstances, and aims to solve problems that arise during manufacturing and mounting in semiconductor packages that connect semiconductor chips by wire bonding.

[0006] The present technology has been made to solve the above-mentioned problems, and a first aspect thereof is a semiconductor package including a semiconductor chip, a substrate connected to the light-receiving surface of the semiconductor chip by a bonding wire, a rib material formed along the periphery of the light-receiving surface of the semiconductor chip, a transparent member, a frame material covering at least one of a portion of the back surface of the transparent member that is the surface not corresponding to the light-receiving surface and the side surface of the transparent member, and a sealing resin that seals the side surface of the semiconductor chip, and a manufacturing method thereof, which has the effect of suppressing cracks in the transparent member.

[0007] In addition, in this first side surface, the transparent member may be bonded to the rib member, and the frame member may include a frame portion that is a frame-shaped member and a side wall portion that protrudes in the optical axis direction along the outer periphery of the frame portion, thereby providing the effect of covering the side surface of the transparent member.

[0008] In addition, in the first side face, the frame portion may cover a part of the light receiving surface of the transparent member, thereby providing an effect that the light receiving surface and the side face of the transparent member are covered by the frame material.

[0009] In addition, in this first aspect, the frame portion may be disposed between the rear surface of the transparent member and the rib material, thereby providing the effect that the rear surface and side surfaces of the transparent member are covered by the frame material.

[0010] In the first aspect, the cross-sectional shape of the side wall portion may be tapered, thereby suppressing interference between the transparent member and the frame material when the transparent member is removed.

[0011] In addition, in this first aspect, the frame material may be a flat frame-shaped member disposed between the rear surface of the transparent member and the rib material, thereby providing the effect of covering the rear surface of the transparent member with the frame material.

[0012] In the first aspect, the size of the transparent member in a predetermined direction parallel to the light receiving surface may be a value that does not exceed the size of the frame, thereby providing an effect of suppressing the size of the transparent member to be equal to or smaller than the frame.

[0013] In the first aspect, the size of the transparent member in a predetermined direction parallel to the light receiving surface may be larger than the size of the frame, thereby providing an effect that a clamping jig can be used to remove the transparent member.

[0014] In the first aspect, the frame material may be a porous material, which reduces voids in the sealing resin.

[0015] In the first aspect, the frame member may include a predetermined number of slits formed along a direction perpendicular to the light-receiving surface, thereby reducing voids in the sealing resin.

[0016] In addition, in this first aspect, the frame material may include a frame portion that is a frame-shaped member and an inner wall portion that protrudes in the optical axis direction along the inner periphery of the frame portion, and the transparent member may be bonded to the frame material, which prevents the rib material 230 from protruding and shortens the distance from the chip edge to the pixel.

[0017] In addition, in this first aspect, a recess may be formed in the substrate, the semiconductor chip may be disposed in the recess, and fastening holes may be formed in the frame material, thereby eliminating the need for a heat dissipation member during mounting.

[0018] In the first aspect, the semiconductor chip may include first and second semiconductor chips, thereby providing an effect of enabling a small-sized SiP (System in Package).

[0019] In the first aspect, the inner wall of the frame member may have an inverse tapered shape, which has the effect of suppressing flare at the edge of the field of view.

[0020] A second aspect of the present technology is a semiconductor package including a substrate having a recess formed therein, a semiconductor chip disposed in the recess and electrically connected to the substrate by wire bonding, a transparent member that seals the recess, and a frame member formed around the transparent member, which prevents adhesive residue from coming into contact with a lens housing during mounting.

[0021] A third aspect of the present technology is a semiconductor package including a substrate having a recess with a step formed on its outer periphery, a semiconductor chip disposed in the recess and electrically connected to the substrate by wire bonding, and a transparent member sealing the recess, which provides the advantage that a clamping jig can be used to remove the transparent member.

[0022] According to a fourth aspect of the present technology, there is provided a semiconductor package including a substrate having a recess and a sidewall portion protruding in an optical axis direction along an outer periphery of the recess, a semiconductor chip disposed in the recess and electrically connected to the substrate by wire bonding, and a transparent member sealing the recess, which prevents adhesive residue from coming into contact with a lens housing during mounting.

[0023] A fifth aspect of the present technology is a semiconductor package including a substrate having a recess formed therein, a semiconductor chip disposed in the recess and electrically connected to the substrate by wire bonding, and a transparent member that is larger than the substrate in a predetermined direction parallel to the plane of the substrate and seals the recess, thereby providing an effect that a clamp-type jig can be used to remove the transparent member.

[0024] According to a sixth aspect of the present technology, there is provided a semiconductor package including a semiconductor chip, a substrate connected to a light-receiving surface of the semiconductor chip by a bonding wire, a frame member including a frame portion formed along an outer periphery of the light-receiving surface of the semiconductor chip and a tapered sidewall portion protruding along the outer periphery of the frame portion, and a transparent member bonded to the frame portion, thereby suppressing interference between the transparent member and the frame member when the transparent member is removed.

[0025] According to a seventh aspect of the present technology, there is provided a semiconductor package including a semiconductor chip, a substrate connected to a light-receiving surface of the semiconductor chip by a bonding wire, a frame member having an adhesive surface parallel to the light-receiving surface and an inclined surface formed along an outer periphery, and a transparent member adhered to the adhesive surface, thereby enabling a clamping jig to be used for removing the transparent member.

[0026] According to an eighth aspect of the present technology, there is provided a semiconductor device including a semiconductor package including a semiconductor chip, a substrate connected to a light-receiving surface of the semiconductor chip by a bonding wire, a rib material formed along the periphery of the light-receiving surface of the semiconductor chip, a transparent member bonded to the rib material, a frame material covering at least one of a portion of a back surface of the transparent member that is not the light-receiving surface and a side surface of the transparent member, and a sealing resin sealing the side surface of the semiconductor chip, and an optical unit that collects incident light and guides it to the semiconductor chip, thereby suppressing cracks in the transparent member.

[0027] 1 is a block diagram showing an example configuration of a semiconductor device according to a first embodiment of the present technology; FIG. 2 is an example cross-sectional view of a semiconductor package according to the first embodiment of the present technology; FIG. 3 is a diagram for explaining sizes of each part of the semiconductor package according to the first embodiment of the present technology; FIG. 4 is an example cross-sectional view of a semiconductor package in a first comparative example; FIG. 5 is an example perspective view of a frame material and glass according to the first embodiment of the present technology; FIG. 6 is an example top view of a semiconductor package according to the first embodiment of the present technology; FIG. 7 is a diagram for explaining a manufacturing method up to application of an adhesive according to the first embodiment of the present technology; FIG. 8 is a diagram for explaining a manufacturing method up to mounting of solder balls and dicing according to the first embodiment of the present technology; FIG. 9 is a flowchart showing an example manufacturing method of a semiconductor package according to the first embodiment of the present technology; FIG. 10 is an example perspective view of a frame material and glass according to the first embodiment of the present technology; FIG. 11 is an example top view of a semiconductor package according to the first embodiment of the present technology; FIG. 1 is a diagram for explaining another example of a manufacturing method in a modified example of the first embodiment of the present technology. FIG. 2 is an example of a cross-sectional view of a semiconductor package in a second embodiment of the present technology. FIG. 3 is another example of a cross-sectional view of a semiconductor package in a second embodiment of the present technology. FIG. 4 is a diagram for explaining a manufacturing method up to application of an adhesive in a second embodiment of the present technology. FIG. 5 is a diagram for explaining a manufacturing method up to mounting of solder balls and dicing in a second embodiment of the present technology. FIG. 6 is a diagram for explaining another example of a manufacturing method in a modified example of the second embodiment of the present technology. FIG. 7 is an example of a cross-sectional view of a semiconductor package in a first modified example of the second embodiment of the present technology. FIG. 8 is an example of a cross-sectional view of a semiconductor package in a second modified example of the second embodiment of the present technology. FIG. 9 is a diagram for explaining removal of glass in the second embodiment of the present technology. FIG. 10 is an example of a cross-sectional view of a semiconductor package in a third embodiment of the present technology.10 is a diagram for explaining removal of a glass in a third embodiment of the present technology. FIG. 11 is another example of a cross-sectional view of a semiconductor package in a third embodiment of the present technology. FIG. 12 is a diagram for explaining removal of a glass in a modified example of the first embodiment of the present technology. FIG. 13 is an example of a top view and a cross-sectional view of a semiconductor package in a fourth embodiment of the present technology. FIG. 14 is another example of a top view and a cross-sectional view of a semiconductor package in a fourth embodiment of the present technology. FIG. 15 is a diagram for explaining sizes of each part of a semiconductor package in a fourth embodiment of the present technology. FIG. 16 is a diagram for explaining removal of a glass in a fourth embodiment of the present technology. FIG. 17 is an example of a cross-sectional view of a semiconductor device in a fourth embodiment of the present technology. FIG. 18 is an example of a cross-sectional view of a semiconductor package in a fifth embodiment of the present technology. FIG. 19 is an example of a cross-sectional view of a semiconductor package in a modified example of the fifth embodiment of the present technology. FIG. 19 is an example of a cross-sectional view of a semiconductor package in a sixth embodiment of the present technology. FIG. 19 is an example of a cross-sectional view of a semiconductor package in a modified example of the sixth embodiment of the present technology. FIG. 19 is an example of a cross-sectional view of a semiconductor package in a seventh embodiment of the present technology. FIG. 19 is a diagram for explaining a manufacturing method up to application of an adhesive in a seventh embodiment of the present technology. 13 is a diagram for explaining a manufacturing method up to sealing and curing in a seventh embodiment of the present technology. FIG. 14 is a diagram for explaining a manufacturing method up to singulation in the seventh embodiment of the present technology. FIG. 15 is an example of a top view of a semiconductor package and a lead frame before bonding of a frame material in the seventh embodiment of the present technology. FIG. 16 is an example of a top view of a semiconductor package after bonding of a frame material in the seventh embodiment of the present technology. FIG. 17 is a diagram for explaining removal of glass after temporary sealing in the seventh embodiment of the present technology. FIG. 18 is a diagram for explaining occurrence of flare in a first comparative example. FIG. 19 is a diagram for explaining flare countermeasures in the first comparative example. FIG. 19 is a diagram for explaining flare countermeasures when a silica filler is used in the first comparative example. FIG. 19 is an example of a cross-sectional view of a semiconductor package in a modified example of the seventh embodiment of the present technology. FIG. 19 is an enlarged view of a case where a silica filler is used in a modified example of the seventh embodiment of the present technology. FIG. 19 is an example of a top view of a resin molded frame in a modified example of the seventh embodiment of the present technology.13 is an enlarged view of a case where a metal etching frame is used in a modified example of the seventh embodiment of the present technology. FIG. 14 is an enlarged view of a case where an air hole is provided in a resin molded frame in a modified example of the seventh embodiment of the present technology. FIG. 15 is an enlarged view of a case where an air hole is provided in a metal etching frame in a modified example of the seventh embodiment of the present technology. FIG. 16 is an example of a cross-sectional view, a top view, and a bottom view of a semiconductor package in an eighth embodiment of the present technology. FIG. 17 is a view for explaining a manufacturing method up to mounting a frame material in the eighth embodiment of the present technology. FIG. 18 is a view for explaining a manufacturing method up to curing in the eighth embodiment of the present technology. FIG. 19 is a cross-sectional view showing an example of mounting of semiconductor packages in a first comparative example and the eighth embodiment of the present technology. FIG. 19 is an example of a cross-sectional view of semiconductor packages in a second comparative example and a ninth embodiment of the present technology. FIG. 19 is an example of a top view of a semiconductor package in the second comparative example. FIG. 19 is an example of a top view of a semiconductor package in the ninth embodiment of the present technology. FIG. 19 is a view for explaining a manufacturing method up to mounting a frame material in the ninth embodiment of the present technology. FIG. 19 is a view for explaining a manufacturing method up to curing in the ninth embodiment of the present technology. FIG. 19 is a block diagram showing an example of a schematic configuration of a vehicle control system. FIG. 2 is an explanatory diagram showing an example of the installation positions of an outside-vehicle information detection unit and an imaging unit.

[0028] Modes for carrying out the present technology (hereinafter referred to as embodiments) will be described below. The descriptions will be made in the following order: 1. First embodiment (an example in which a frame material covers part of the upper surface and side surfaces of glass) 2. Second embodiment (an example in which a frame material covers part of the lower surface of glass) 3. Third embodiment (an example in which a frame material covers part of the lower surface of glass that is larger than a rib material) 4. Fourth embodiment (an example in which a frame material covers part of the lower surface and side surfaces of glass, and the frame material is tapered) 5. Fifth embodiment (an example in which a frame material is provided on a ceramic substrate) 6. Sixth embodiment (an example in which a frame material covers the side surfaces of glass in a Frame Flat Package (FFP)) 7. Seventh embodiment (an example in which an L-shaped frame material is bonded to a rib material, and glass is bonded to the frame material) 8. Eighth embodiment (an example in which an L-shaped frame material is bonded to a rib material in a substrate with a cavity structure, and glass is bonded to the frame material) 9. Ninth embodiment (an example in which an L-shaped frame material is adhered to a rib material applied to each of a plurality of semiconductor chips, and glass is adhered to the frame material) 10. Application example to a moving body

[0029] 1 is a block diagram showing a configuration example of a semiconductor device 100 according to a first embodiment of the present technology. The semiconductor device 100 is a device for capturing image data, and includes an optical unit 110, a sensor chip 240, and a DSP (Digital Signal Processing) circuit 120. The semiconductor device 100 further includes a display unit 130, an operation unit 140, a bus 150, a frame memory 160, a storage unit 170, and a power supply unit 180. The semiconductor device 100 is expected to be a camera mounted on a smartphone, an in-vehicle camera, or the like.

[0030] The optical unit 110 collects incident light and guides it to the sensor chip 240. The sensor chip 240 has a CIS (CMOS Image Sensor) function and generates image data by photoelectric conversion. The sensor chip 240 supplies the generated image data to the DSP circuit 120 via a signal line 209.

[0031] The DSP circuit 120 performs predetermined signal processing on the image data, and outputs the processed image data to a frame memory 160 or the like via a bus 150.

[0032] The display unit 130 displays image data. For example, a liquid crystal panel or an organic EL (Electro Luminescence) panel is assumed as the display unit 130. The operation unit 140 generates an operation signal in accordance with a user's operation.

[0033] The bus 150 is a common path for the sensor chip 240, DSP circuit 120, display unit 130, operation unit 140, frame memory 160, storage unit 170, and power supply unit 180 to exchange data with one another.

[0034] The frame memory 160 holds image data. The storage unit 170 stores various data such as image data. The power supply unit 180 supplies power to the sensor chip 240, the DSP circuit 120, the display unit 130, etc.

[0035] In the semiconductor device 100 having the configuration illustrated in the figure, the sensor chip 240 is disposed in a semiconductor package, which will be described later.

[0036] 2 is an example of a cross-sectional view of a semiconductor package 200 according to the first embodiment of the present technology. As illustrated in FIG. 2A, the semiconductor package 200 includes a glass 210, a frame material 220, a rib material 230, a sensor chip 240, a sealing resin 250, and an interposer substrate 260.

[0037] Hereinafter, the light-receiving surface of the glass 210, the sensor chip 240, etc. will be referred to as the "front surface" or "top surface," and the surface opposite to the front surface will be referred to as the "back surface" or "bottom surface."

[0038] The interposer substrate 260 is a substrate on which the sensor chip 240 is die-bonded and wire-bonded to its front surface, and on which a predetermined number of solder balls 272 are mounted on its rear surface. Bonding pads 271-2 on the front surface are electrically connected to the solder balls 272 on the rear surface by wiring (not shown) within the interposer substrate 260. A flat silicon substrate is used as the interposer substrate 260. The areas of the front and rear surfaces of the interposer substrate 260 are larger than those of the sensor chip 240 and the glass 210.

[0039] The interposer substrate 260 is an example of a substrate described in the claims.

[0040] The sensor chip 240 is a semiconductor chip having a CIS function. A plurality of pixels (not shown) are arranged on the surface of the sensor chip 240, and the area in which these pixels are arranged is referred to as the "optical area." On the surface of the sensor chip 240, bonding pads 271-1 are arranged around the optical area. The area from coordinates X1 to X2 of a in the figure corresponds to the optical area. The bonding pad 271-1 is connected to a bonding pad 271-2 of the interposer substrate 260 by a bonding wire 271. In this way, the surface of the sensor chip 240 (i.e., the light-receiving surface) is electrically connected to the interposer substrate 260 by the bonding wire 271.

[0041] The sensor chip 240 is an example of a semiconductor chip described in the claims.

[0042] The rib material 230 is a resin formed around the light receiving area along the outer periphery of the surface of the sensor chip 240 .

[0043] The glass 210 is a member that transmits incident light and is adhered to the upper surface of the rib material 230. This glass 210 is also called a cover glass or a seal glass. A transparent resin can be used instead of the glass 210. The glass 210 and the transparent resin are examples of the transparent member described in the claims. The space surrounded by the sensor chip 240, the rib material 230, and the glass 210 is called a "cavity."

[0044] The frame material 220 covers a portion of the surface (light-receiving surface) of the glass 210 and the side surfaces of the glass 210. Of the light-receiving surface of the glass 210, the frame material 220 covers the periphery of the light-receiving area of ​​the sensor chip 240. The frame material 220 preferably has light-blocking properties. This allows the periphery of the light-receiving area to be light-blocked, thereby suppressing flare. In addition, a resin with a linear expansion coefficient close to that of the sealing resin 250 is used as the material for the frame material 220 in order to reduce stress. Note that, in order to improve strength and heat dissipation, a metal such as copper can be used as the material for the frame material 220.

[0045] The sealing resin 250 is a resin that seals the side surfaces of the sensor chip 240 , the rib material 230 and the frame material 220 .

[0046] In the figure, b is an enlarged view of the area surrounded by the dotted line in a. As illustrated in b, the frame material 220 consists of a frame-shaped "frame portion" and a "side wall portion" that protrudes downward along the Z-axis (i.e., the optical axis) direction along the outer periphery of the frame portion. The portion surrounded by the XZ coordinates (X3, Z1), (X3, Z2), (X5, Z1), and (X5, Z2) in b corresponds to the frame portion. The portion surrounded by the XZ coordinates (X4, Z2), (X4, Z3), (X5, Z2), and (X5, Z3) corresponds to the side wall portion. The cross section of the left side of the frame material 220 has a shape obtained by inverting an L-shape vertically and horizontally, while the cross section of the right side has a shape obtained by inverting an L-shape vertically and horizontally. In addition, a small gap is provided between the side of the glass 210 and the frame material 220.

[0047] The upper surface of the glass 210 and the lower surface of the frame portion of the frame material 220 are bonded together with an adhesive 273. For example, a thermoplastic resin is used as the adhesive 273. The use of a thermoplastic resin makes it easier to remove the glass 210, as described below. The thermoplastic resin is also called a hot melt material.

[0048] Furthermore, in the manufacturing process described below, sealing with the sealing resin 250 is performed by potting with the frame material 220 bonded to the glass 210. At this time, because the frame material 220 covers the side surfaces of the glass 210, the injected sealing resin 250 mainly creeps up the side surfaces of the frame material 220, suppressing creeping up to the side surfaces of the glass 210. Furthermore, although stress occurs on the side surfaces of the glass 210 due to shrinkage of the sealing resin 250 during a temperature cycle (TC) test or the like, suppression of creeping up of the sealing resin 250 to the side surfaces and adhesion of the frame material 220 can reduce the stress. The thin arrow b in the figure indicates the direction of shrinkage of the sealing resin 250, and the hollow arrow indicates the direction of stress. Because the frame material 220 is bonded to the top surface of the glass 210, stress due to shrinkage also occurs on the top surface of the glass 210 via the frame material 220, allowing the stress to be distributed to both the top surface and the side surfaces of the glass 210.

[0049] Furthermore, because microcracks may occur on the side surfaces of the glass 210 when the glass 210 is cut, the top surface is expected to be in a better surface condition than the side surfaces. Therefore, even if stress occurs on the top surface of the glass 210, it is considered that estimation of durability of the glass 210 and simulation prediction thereof will be easier than for the side surfaces.

[0050] 3 is a diagram for explaining the size of each part of the semiconductor package 200 according to the first embodiment of the present technology. As illustrated in a in the figure, the size in the X-axis direction of the side wall part of the frame material 220 (in other words, the width) is dX １ The size (width) of the adhesive 273 in the X-axis direction is dX ２ The size (width) of the rib material 230 in the X-axis direction is defined as dX ３ The size (width) of the sealing resin 250 in the X-axis direction is dX ５ The size of the left side of the gap between the frame material 220 and the side surface of the glass 210 is defined as g.

[0051] The size of the frame material 220 in the Z-axis direction (in other words, the height) is dZ １and the size of the frame portion of the frame material 220 in the Z-axis direction (in other words, the thickness) is dZ ２ The size (thickness) of the glass 210 in the Z-axis direction is defined as dZ ３ The size (height) of the rib material 230 in the Z-axis direction is dZ ４ Let's say.

[0052] As shown in FIG. 1B, the size (thickness) of the adhesive 273 in the Z-axis direction is dZ ５ Let's say.

[0053] These sizes are, for example, dX １ If we set 200, then dX ２ is 400, and dX ３ The width (dX ２ ) and the width of the rib material 230 (dX ３ ) is not limited to this example, and the dimensions of dX ２ dX ３ The following is fine.

[0054] Also, dX ５ is between 800 and 900. １ If the gap g is set to 300 to 500, interference with the bonding wire 271 can be prevented. The gap g is 100. ２ is 200, and dZ ３ is between 400 and 500. ４ is 150, and dZ ５ is 30.

[0055] Here, a configuration without the frame member 220 is assumed as a first comparative example.

[0056] 4 is an example of a cross-sectional view of a semiconductor package 200 in a first comparative example. As illustrated in FIG. 4A, in the first comparative example, a frame material 220 is not provided, and the sensor chip 240, the rib material 230, and the side surfaces of the glass 210 are sealed with a sealing resin 250.

[0057] 1B is an enlarged view of the area surrounded by the dotted line in 1A. In the first comparative example, because the frame material 220 is not present, the sealing resin 250 is not prevented from creeping up on the side surfaces of the glass 210, and creeps up until it reaches the top. Furthermore, stress occurs on the side surfaces of the glass 210 during TC tests and the like, but because the frame material 220 is not present, stress does not occur on the top surface, and instead the stress is concentrated on the side surfaces. This can lead to cracks in the glass 210.

[0058] 5 is an example of a perspective view of the frame material 220 and the glass 210 according to the first embodiment of the present technology. The frame material 220 is a frame-shaped member whose outer periphery protrudes downward, and has an opening in a portion including the light receiving area of ​​the sensor chip 240. In the figure, the portion surrounded by XY coordinates (X0, Y0), (X0, Y1), (X3, Y0), and (X3, Y1) corresponds to the opening. The frame material 220 is adhered to the light receiving surface of the rectangular glass 210.

[0059] 6 is an example of a top view of the semiconductor package 200 according to the first embodiment of the present technology. For example, as illustrated in FIG. 6A, an adhesive 273 is applied along the entire periphery of the light receiving area. This maintains the airtightness of the space between the glass 210 and the frame material 220, and prevents dust from entering the space.

[0060] As shown in Fig. 1B, the adhesive 273 can be applied along the periphery of the light receiving area, leaving a portion (for example, one of the four corners) open. This makes it possible to suppress an increase in internal pressure in the space between the glass 210 and the frame material 220.

[0061] [Manufacturing Method of Semiconductor Package] Next, a manufacturing method of the semiconductor package 200 will be described with reference to FIGS.

[0062] First, as shown in Fig. 7A, the sensor chip 240 is die-bonded to the upper surface of the interposer substrate 260 in the wafer. Then, as shown in Fig. 7B, the sensor chip 240 is wire-bonded to the interposer substrate 260 by bonding wires 271. Then, as shown in Fig. 7C, a rib material 230 is formed along the outer periphery of the sensor chip 240, and glass 210 is bonded to the upper surface of the rib material 230. Then, as shown in Fig. 7D, an adhesive 273 is applied to the upper surface of the glass 210 along the outer periphery.

[0063] Next, as shown in FIG. 8A, a frame material 220 is adhered. Then, as shown in FIG. 8B, the side surfaces of the sensor chip 240 are sealed with a sealing resin 250. Then, as shown in FIG. 8C, a predetermined number of solder balls 272 are mounted on the back surface of the interposer substrate 260, and the wafer is separated into individual interposer substrates 260 by dicing. The semiconductor package 200 shown in FIG. 2 is manufactured by the steps shown in FIG. 7 and FIG. 8A.

[0064] 9 is a flowchart showing an example of a method for manufacturing a semiconductor package according to the first embodiment of the present technology. The sensor chip 240 is die-bonded to the upper surface of the interposer substrate 260 (step S901), and the chip is wire-bonded (step S902). Then, a rib material 230 is formed along the outer periphery of the sensor chip 240, and the glass 210 is bonded to the upper surface of the rib material 230 (step S903). Then, an adhesive 273 is applied to the upper surface of the glass 210, and the frame material 220 is bonded to the rib material 230 (step S904). Then, the side surfaces of the sensor chip 240 are sealed with a sealing resin 250 (step S905). Then, a predetermined number of solder balls 272 are mounted on the back surface of the interposer substrate 260, and dicing is performed (step S906).

[0065] As described above, according to the first embodiment of the present technology, the frame material 220 covers the side surfaces of the glass 210, so that cracks in the glass 210 during potting can be suppressed.

[0066] [Modification] In the first embodiment described above, the frame material 220 used has a cross-sectional shape that is an upside-down L-shape, but it is also possible to use an L-shaped frame material 220. The semiconductor package 200 in this modification of the first embodiment differs from the first embodiment in that the frame material 220 is L-shaped.

[0067] 10 is a cross-sectional view showing a configuration example of a semiconductor package 200 according to a modification of the first embodiment of the present technology. As shown in FIG. 10A, a frame member 220 according to the first modification of the first embodiment covers a portion of the lower surface of the glass 210 and its side surfaces. Of the frame portion and side wall portion of the frame member 220, the frame portion is disposed between the glass 210 and the rib member 230. The cross section of the left side of the frame member 220 is L-shaped, and the cross section of the right side is a shape obtained by mirror-inverting the L shape.

[0068] In the first embodiment, the rib material 230 was bonded to the glass 210, and in order to achieve sufficient adhesive strength, the area of ​​the glass 210 had to be greater than a certain size (for example, greater than the area of ​​the sensor chip 240).

[0069] In contrast, in the modified example of the first embodiment, the rib material 230 is bonded to the frame material 220. Therefore, the size of the glass 210 does not affect the adhesive strength between them, and the size of the glass 210 in the X-axis direction and the Y-axis direction can be made smaller than in the first embodiment.

[0070] The size (width) of the adhesive 273 in the X-axis direction is dX ２ and the size of the glass 210 in the X-axis direction (in other words, the length) is dX ４ The size (thickness) of the glass 210 in the Z-axis direction is defined as dZ ３ The size of the left side of the gap between the frame material 220 and the side surface of the glass 210 is g １ The size of the right side of the gap is g ２ Let's say.

[0071] These sizes are, for example, dX ２ If we set 300, then dX ４ is 2000, and dZ ３is 400.

[0072] Also, g １ and g ２ Both are 100. Due to mounting errors, g １ is 150, g ２ is 50, etc., g １ and g ２ The value may differ by up to about ±50.

[0073] As shown in FIG. 1B, the frame portion of the frame material 220 can be thickened. For example, the size (thickness) of the frame portion in the Z-axis direction can be increased by dZ. ２ and the size (height) of the side wall portion of the frame material 220 in the Z-axis direction is dZ ５ Then, dZ ２ dZ ５ For example, dZ ２ If 200, dZ ５ is 100. The thickened frame portion makes it easier to remove the glass 210, which will be described later.

[0074] 11 is an example of a perspective view of a frame material 220 and glass 210 in a modified example of the first embodiment of the present technology. As illustrated in the drawing, in the modified example of the first embodiment, a frame-shaped member whose outer periphery protrudes upward is used as the frame material 220. The glass 210 is bonded to the upper surface of the frame portion of this frame material 220.

[0075] 12 is an example of a top view of a semiconductor package according to a modified example of the first embodiment of the present technology. For example, as illustrated in a in the figure, adhesive 273 is applied along the entire periphery of the light receiving area. In a in the figure, the cavity is kept airtight and dust can be prevented from entering.

[0076] As shown in Fig. 1B, it is also possible to remove a portion of the periphery of the light receiving area and apply adhesive 273. In Fig. 1B, it is possible to suppress an increase in internal pressure of the cavity due to a temperature rise during reflow, and to prevent cracks that may occur in the glass 210, frame material 220, etc. due to the increase in internal pressure.

[0077] Also, as shown in Fig. 1C, adhesive 273 can be applied to a part of the periphery of the light receiving area, which makes it easier to remove the glass 210, which will be described later.

[0078] A method for manufacturing the semiconductor package 200 according to the modified example of the first embodiment will be described with reference to FIGS.

[0079] 13A, the sensor chip 240 is die-bonded to the upper surface of the interposer substrate 260 in the wafer. Then, as shown in FIG. 13B, the sensor chip 240 is wire-bonded to the interposer substrate 260 by bonding wires 271. Then, as shown in FIG. 13C, a rib material 230 is formed along the outer periphery of the sensor chip 240. Then, as shown in FIG. 13D, the frame material 220 is adhered to the upper surface of the rib material 230, and an adhesive 273 is applied to the frame portion of the frame material 220.

[0080] 14A, the glass 210 is adhered to the frame of the frame material 220. Then, as shown in FIG. 14B, the sides of the sensor chip 240 are sealed with a sealing resin 250. Then, as shown in FIG. 14C, a predetermined number of solder balls 272 are mounted on the back surface of the interposer substrate 260, and dicing is performed.

[0081] The manufacturing method in the modified example of the first embodiment is not limited to the method exemplified in FIGS.

[0082] For example, as shown in d in Fig. 15, the glass 210 can be bonded to the frame material 220 after the rib material 230 has been formed. At this stage, the frame material 220 is not bonded to the rib material 230, and in the next step, the frame material 220 will be bonded to the rib material 230. Then, steps b and c in Fig. 14 are carried out.

[0083] As described above, according to the modification of the first embodiment of the present technology, since the L-shaped frame member 220 is used, the size of the glass 210 can be made smaller than that of the first embodiment.

[0084] 2. Second Embodiment In the above-described first embodiment, the frame material 220 is a frame-shaped member whose outer periphery protrudes upward, but a flat frame-shaped member can also be used as the frame material 220. The semiconductor package 200 in this second embodiment differs from the first embodiment in that the frame material 220 is a flat frame-shaped member.

[0085] 16 is an example of a cross-sectional view of a semiconductor package 200 according to a second embodiment of the present technology. As illustrated in FIG. 16 a, in the second embodiment, the outer periphery of the frame material 220 does not protrude upward or downward, and the frame material 220 is a flat, frame-shaped member. The frame material 220 is disposed between the rear surface of the glass 210 and the rib material 230, with the light-receiving surface serving as the front surface. The size of the glass 210 in the direction parallel to the light-receiving surface (the X-axis direction or the Y-axis direction) does not exceed the size of the rib material 230. The sensor chip 240, the rib material 230, and the side surfaces of the frame material 220 are sealed with a sealing resin 250.

[0086] Furthermore, for example, a thermoplastic resin (hot melt material) can be used as the adhesive 273. By using a thermoplastic resin, it becomes easier to remove the glass 210, which will be described later.

[0087] As described above, the frame material 220 has a simpler frame shape than that of the first embodiment, and therefore the molding cost can be reduced and manufacturability can be improved.

[0088] The size (width) of the frame material 220 in the X-axis direction and the Y-axis direction is the same as the width of the rib material 230. The size (width) of the frame material 220 and the rib material 230 in the X-axis direction is defined as dX ３ The size (thickness) of the glass 210 in the Z-axis direction is dZ ３ The size (thickness) of the frame material 220 in the Z-axis direction is dZ ２ Let's say.

[0089] For example, dX ３ If we set 400, dZ ３ is 400 to 500, and dZ ２is 200.

[0090] As shown in FIG. 1B, the width of the frame material 220 is set to the width of the rib material 230 (for example, dX ３ In this case, the size of the frame material 220 is preferably set to such an extent that the frame material 220 covers the upper part of the bonding pad 271-2 on the light-receiving surface of the interposer substrate 260.

[0091] The surface of the frame material 220 can also be roughened by blasting or dimple processing, which increases the surface area of ​​the frame material 220 and increases the margin for preventing the sealing resin 250 from creeping up.

[0092] As shown in FIG. 17A, the cross section of the frame material 220 can be tapered to prevent flare and vignetting.

[0093] Also, as illustrated in b in the same figure, the frame material 220 is thickened to a thickness dZ in the Z-axis direction. ２ The thickness dZ of the glass 210 ３ This makes it possible to suppress creeping up of the sealing resin 250 even if the amount of resin is the same as when the frame material 220 is L-shaped.

[0094] Next, a method for manufacturing the semiconductor package 200 according to the second embodiment will be described with reference to FIGS.

[0095] 18A, the sensor chip 240 is die-bonded to the upper surface of the interposer substrate 260 in the wafer. Then, as shown in FIG. 18B, the sensor chip 240 is wire-bonded to the interposer substrate 260 by bonding wires 271. Then, as shown in FIG. 18C, the rib material 230 is formed along the outer periphery of the sensor chip 240. Then, as shown in FIG. 18D, the frame material 220 is adhered to the upper surface of the rib material 230, and an adhesive 273 is applied to the upper surface of the frame material 220.

[0096] 19A, glass 210 is adhered to the upper surface of the frame material 220. Then, as shown in FIG. 19B, the sides of the sensor chip 240 are sealed with sealing resin 250. Then, as shown in FIG. 19C, a predetermined number of solder balls 272 are mounted on the back surface of the interposer substrate 260, and dicing is performed.

[0097] The manufacturing method in the second embodiment is not limited to the method exemplified in FIGS.

[0098] For example, as shown in d in Fig. 20, the glass 210 can be bonded to the frame material 220 after the rib material 230 has been formed. At this stage, the frame material 220 is not bonded to the rib material 230, and in the next step, the frame material 220 will be bonded to the rib material 230. Then, steps b and c in Fig. 19 are carried out.

[0099] As described above, according to the second embodiment of the present technology, since the frame material 220 has a flat frame shape, it is possible to reduce the molding cost thereof.

[0100] [First Modification] In the second embodiment described above, the side surfaces of the sensor chip 240 and the like are sealed with the sealing resin 250, but voids may occur within the sealing resin 250, and these voids may cause corrosion of the bonding wires 271. The semiconductor package 200 in this first modification of the second embodiment differs from the second embodiment in that a porous member is used as the frame material 220.

[0101] 21 is an example of a cross-sectional view of a semiconductor package 200 according to a first modified example of the second embodiment of the present technology. The semiconductor package 200 according to the first modified example of the second embodiment differs from the second embodiment in that the frame material 220 is a porous material. If the frame material 220 is porous, it is possible to reduce voids in the sealing resin 250 by utilizing the air vent effect during sealing.

[0102] As described above, according to the first modification of the second embodiment of the present technology, since the frame material 220 is porous, it is possible to reduce voids in the sealing resin 250 due to the air vent effect during sealing.

[0103] [Second Modification] In the second embodiment described above, the side surfaces of the sensor chip 240 and the like are sealed with the sealing resin 250, but voids may occur within the sealing resin 250, and the voids may cause corrosion of the bonding wires 271. The semiconductor package 200 in this second modification of the second embodiment differs from the second embodiment in that a predetermined number of slits are provided in the frame material 220.

[0104] 22 is an example of a cross-sectional view of a semiconductor package 200 according to a second modified example of the second embodiment of the present technology, in which a portion a in the drawing is an example of the cross-sectional view of the semiconductor package 200, and b in the drawing is an enlarged view of a portion surrounded by a dotted line in a in the drawing.

[0105] As shown in a and b in the figure, in the second embodiment, the frame material 220 has a predetermined number of slits extending in the Z-axis direction. By providing these slits, it is possible to reduce voids in the sealing resin 250 by the air vent effect during sealing.

[0106] As described above, according to the second modification of the second embodiment of the present technology, the frame material 220 has a predetermined number of slits, and therefore, the air vent effect during sealing can reduce voids in the sealing resin 250.

[0107] 3. Third Embodiment In the second embodiment described above, the flat frame-shaped frame material 220 is disposed below the glass 210, but the customer may remove the glass 210. For example, after the semiconductor package 200 is mounted on a mounting board, the customer may remove the glass 210 and place a lens housing thereon, thereby suppressing ring flare caused by the glass 210.

[0108] 23A, a glass removal jig 310 having a flat adhesive surface is used, and the adhesive surface is bonded and fixed to the glass 210 with an adhesive. Then, as shown in FIG. 23B, the glass 210 is removed from the semiconductor package 200 by tilting the glass removal jig 310.

[0109] However, this method requires adhesive to secure the glass removal jig 310. When consecutively removing the glass 210 of each of the semiconductor packages 200, it is time-consuming to reapply adhesive each time the glass 210 is removed. The semiconductor package 200 in this third embodiment differs from the second embodiment in that the size (length) of the glass 210 in the X-axis direction and Y-axis direction parallel to the light-receiving surface is larger than that of the rib material 230.

[0110] 24 is an example of a cross-sectional view of a semiconductor package 200 according to a third embodiment of the present technology. The semiconductor package 200 according to the third embodiment differs from the second embodiment in that the size (length) of the glass 210 in the direction parallel to the light receiving surface (X-axis direction or Y-axis direction) is larger than the size of the rib material 230. Note that the size of the frame material 220 in the X-axis direction or Y-axis direction is the same as the size of the rib material 230.

[0111] 25 is a diagram for explaining removal of the glass 210 according to the third embodiment of the present technology. As illustrated in FIG. 25 a, when the glass 210 is longer than the rib material 230, a space is created below the glass 210, and therefore a clamp-type glass removal jig 320 that clamps the sides of the glass 210 can be used. Then, as illustrated in FIG. 25 b, the glass 210 is removed from the semiconductor package 200 by tilting the glass removal jig 320.

[0112] By using the clamp-type glass removal jig 320 illustrated in a and b in the figure, adhesive is not required when fixing the jig.

[0113] 26, the corners on the lower side of the glass 210 may be chamfered, thereby preventing the glass 210 from being chipped when it is removed.

[0114] As described above, according to the third embodiment of the present technology, since the glass 210 is longer than the rib material 230, a clamp-type glass removal jig 320 that does not require adhesive can be used when removing the glass 210.

[0115] <4. Fourth Embodiment> In the first modification of the first embodiment described above, the L-shaped frame material 220 is disposed below the glass 210, but the glass 210 may be removed by the customer.

[0116] 27A, for example, a glass removal jig 310 having a flat adhesive surface is used, and the adhesive surface and the glass 210 are bonded and fixed with an adhesive. Then, as shown in FIG. 27B, the glass 210 is removed from the semiconductor package 200 by tilting the glass removal jig 310.

[0117] However, with this method, there is a risk that the glass 210 may interfere with the sidewall portion of the frame material 220 when removing the glass 210. For example, the glass 210 may interfere with the frame material 220 when the angle θ between the glass 210 and the light receiving surface of the sensor chip 240 exceeds 20 degrees. The semiconductor package 200 according to the fourth embodiment differs from the first modification of the first embodiment in that the sidewall portion of the frame material 220 has a tapered shape.

[0118] 28 shows an example of a top view and a cross-sectional view of a semiconductor package 200 according to the fourth embodiment of the present technology. In the figure, "a" shows a top view of the semiconductor package 200. In the figure, "b" shows a cross-sectional view of the semiconductor package 200 taken along a line segment A-A' parallel to the X-axis of "a" in the figure. In the figure, "c" shows a cross-sectional view of the semiconductor package 200 taken along a line segment B-B' parallel to the Y-axis of "a" in the figure.

[0119] As illustrated in b and c in the figure, the outer side of the side wall of the frame material 220 is perpendicular to the surface of the glass 210. On the other hand, the inner side of the side wall of the frame material 220 has a slope with respect to the surface of the glass 210, and the side wall has a tapered shape that becomes thinner as it approaches the upper end.

[0120] Further, when viewed from the Z-axis direction, tapers are formed on all four sides of the frame material 220. Therefore, in both b and c in the figure, both the right and left side wall portions have a tapered shape.

[0121] It is also possible to tape only two opposing sides of the four sides of the frame material 220, as illustrated in a, b, and c in Figure 29. For example, if the top of the page is the north side and only the east and west sides are tapered, as illustrated in b in the figure, the right and left side wall portions will be tapered in a cross section taken along line A-A'. On the other hand, as illustrated in c in the figure, the side wall portions will not be tapered in a cross section taken along line B-B'. It should be noted that if only two sides are tapered, the direction in which the glass 210 can be removed will be limited.

[0122] As mentioned above, it is preferable to use a thermoplastic resin (hot melt material) as the adhesive 273. In this case, the adhesive 273 can be easily removed by heating it when removing it.

[0123] 30 is a diagram for explaining the size of each part of the semiconductor package 200 according to the fourth embodiment of the present technology. Only the glass 210 and the frame material 220 are noted.

[0124] The size (length) of the glass 210 in the X-axis direction is dX ４ and the size of the upper surface of the tapered frame material 220 in the X-axis direction is dX ６ The taper angle between the tapered surface and the Z-axis direction is θ. The size (thickness) of the glass 210 in the Z-axis direction is dZ. ３ The size (thickness) of the adhesive 273 in the Z-axis direction is dZ ４ The size (height) of the side wall portion of the frame material 220 in the Z-axis direction is defined as dZ５ The size (thickness) of the frame portion of the frame material 220 in the Z-axis direction is dZ ２ The size of the left side of the gap between the side surface of the glass 210 and the frame material 220 is g １ Let the size on the right be g ２ Let's say.

[0125] For example, dX ４ If we set 2000, then dX ６ is 100, and dZ ３ is 400. Also, dZ ４ is 30, and dZ ５ is 300. θ is, for example, 20 degrees. g １ and g ２ Both are 100. Due to mounting errors, g １ is 150, g ２ is 50, etc., g １ and g ２ The value may differ by up to about ±50.

[0126] 31 is a diagram for explaining removal of the glass 210 according to the fourth embodiment of the present technology. As illustrated in FIG. 31 a, the adhesive surface of a glass removal jig 310 and the glass 210 are bonded with an adhesive. Then, as illustrated in FIG. 31 b, the glass 210 is removed from the semiconductor package 200 by tilting the glass removal jig 310. Because the frame material 220 has a tapered shape, interference between the side surface of the glass 210 and the frame material 220 during removal can be suppressed. For example, if the angle θ between the glass 210 and the light receiving surface of the sensor chip 240 is within 30 degrees, the glass 210 can be removed without interfering with the frame material 220.

[0127] 32 is an example of a cross-sectional view of the semiconductor device 100 according to the fourth embodiment of the present technology. After removing the glass 210, the semiconductor package 200 is mounted on the lens housing 111 in the optical unit 110. Although a residue of the adhesive 273 remains after removal, the L-shaped frame material 220 can prevent the residue from coming into contact with the lens housing 111.

[0128] Thus, according to the fourth embodiment of the present technology, the side wall portion of the frame material 220 is tapered, thereby suppressing interference between the side surface of the glass 210 and the frame material 220 when removing the glass 210.

[0129] 5. Fifth Embodiment In the above-described first embodiment, the sensor chip 240 is connected to a flat interposer substrate 260, but it is also possible to connect the sensor chip 240 to a ceramic substrate with a cavity structure. The semiconductor package 200 in this fifth embodiment differs from the first embodiment in that a ceramic substrate with a cavity structure is used.

[0130] 33A is an example of a cross-sectional view of a semiconductor package 200 according to a fifth embodiment of the present technology. The semiconductor package 200 according to the fifth embodiment includes a glass 210, a frame material 220, a sensor chip 240, and a ceramic substrate 265.

[0131] The ceramic substrate 265 has a recess, and the space surrounded by the recess corresponds to a cavity. The sensor chip 240 is placed in the recess and is electrically connected to the ceramic substrate 265 by bonding wires 271. A predetermined number of lands 275 are provided on the lower surface of the ceramic substrate 265. The ceramic substrate 265 is an example of a substrate as defined in the claims.

[0132] The glass 210 is bonded to the periphery of the recess on the upper surface of the ceramic substrate 265 with a sealing resin 274 .

[0133] The frame material 220 is formed around the recess on the upper surface of the ceramic substrate 265, and covers the side surfaces of the glass 210. Furthermore, a taper is formed on each of the sidewalls of the four sides or two opposing sides of the frame material 220.

[0134] By forming the frame material 220 around the glass 210, when the glass 210 is removed and mounted on a lens housing (not shown), residue of the adhesive 273 can be prevented from coming into contact with the lens housing.

[0135] As shown in FIG. 2B, instead of the frame member 220, a side wall portion that protrudes upward along the outer periphery of the recess can be formed on the ceramic substrate 265.

[0136] As described above, according to the fifth embodiment of the present technology, the frame material 220 is formed around the glass 210 that seals the cavity of the ceramic substrate 265, so that it is possible to prevent residue of the adhesive 273 from coming into contact with the lens housing during mounting.

[0137] In the fifth embodiment described above, the frame material 220 is formed around the glass 210 that seals the cavity in the ceramic substrate 265. However, in this configuration, when removing the glass 210, a glass removal jig 310 as shown in Fig. 23 is used, and adhesive is required to secure the jig. The semiconductor package 200 in this modification of the fifth embodiment differs from the fifth embodiment in that adhesive is not required due to the formation of a step or the like.

[0138] 34 is an example of a cross-sectional view of a semiconductor package according to a modification of the fifth embodiment of the present technology. As illustrated in FIG. 34 a, in this modification of the fifth embodiment, the frame material 220 is not provided, and the dimensions of the glass 210 in the X-axis direction and the Y-axis direction are the same as those of the ceramic substrate 265. A step is formed on the outer periphery of the ceramic substrate 265. The inside of the step is the bonding surface to be bonded to the glass 210, and the step portion is lower than the bonding surface. Due to this shape, the glass 210 overhangs the bonding surface of the ceramic substrate 265.

[0139] The height of the step is arbitrary, and the step may be higher than the bottom surface of the cavity, as shown in a in the same figure, or the height of the step may be the same as the bottom surface of the cavity, as shown in b in the same figure.

[0140] As shown in a and b in the figure, by providing a step on the outer periphery of the ceramic substrate 265, it is possible to use the clamp-type glass removal jig 320 shown in Fig. 25 when removing the glass 210. This makes adhesive unnecessary.

[0141] As shown in Fig. 1C, the dimensions of the glass 210 in the X-axis direction and the Y-axis direction can be made larger than those of the ceramic substrate 265. In this case, a clamp-type glass removal jig 320 can be used, eliminating the need for adhesive. Also, in Fig. 1C, the step in the ceramic substrate 265 is unnecessary.

[0142] As described above, according to the modification of the fifth embodiment of the present technology, a step is provided on the outer periphery of the ceramic substrate 265, so that a clamp-type glass removal jig 320 can be used, eliminating the need for adhesive. Also, even if the size of the glass 210 in the X-axis direction or the Y-axis direction is made larger than that of the ceramic substrate 265, adhesive is also unnecessary.

[0143] 6. Sixth Embodiment In the modification of the fourth embodiment described above, as illustrated in FIG. 28 , the frame material 220 having tapered sidewalls is mounted on the interposer substrate 260 via the rib material 230. However, the frame material 220 can also be mounted directly on the interposer substrate 260 without using the rib material 230. Such a semiconductor package is called an FFP (Frame Flat Package). The semiconductor package 200 in this sixth embodiment differs from the fourth embodiment in that the frame material 220 having tapered sidewalls is formed on the interposer substrate 260.

[0144] 35 is an example of a cross-sectional view of a semiconductor package 200 according to a sixth embodiment of the present technology. The semiconductor package 200 according to the sixth embodiment is an FFP, and differs from the fourth embodiment in that a rib material 230 and a sealing resin 250 are not provided, and a frame material 220 is formed on the upper surface of an interposer substrate 260. The sidewall portion of the frame material 220 has a tapered shape, as in the fourth embodiment. This makes it possible to suppress interference between the side surface of the glass 210 and the frame material 220 when removing the glass 210.

[0145] Thus, according to the sixth embodiment of the present technology, a frame material 220 having a tapered side wall portion is formed on the surface of the interposer substrate 260, thereby suppressing interference between the side surface of the glass 210 and the frame material 220 when removing the glass 210.

[0146] [Modification] In the sixth embodiment described above, the frame material 220 having tapered sidewalls is formed on the surface of the interposer substrate 260. However, in this configuration, when removing the glass 210, a glass removal jig 310 as shown in Figure 23 is used, and adhesive is required to secure the jig. The semiconductor package 200 in this modification of the sixth embodiment differs from the sixth embodiment in that an inclined surface is provided along the outer periphery of the frame material 220, thereby eliminating the need for adhesive.

[0147] 36 is an example of a cross-sectional view of a semiconductor package 200 according to a modification of the sixth embodiment of the present technology. In this modification of the sixth embodiment, the frame material 220 does not have a sidewall portion. The frame material 220 has an inclined surface that slopes downward along its outer periphery. The frame material 220 also has an adhesive surface on the inside of the inclined surface that is parallel to the light receiving surface of the sensor chip 240, and the glass 210 is adhered to the adhesive surface.

[0148] By forming an inclined surface along the outer periphery of the frame material 220, a clamp-type glass removal jig 320 can be used when removing the glass 210. This eliminates the need for adhesive.

[0149] As described above, according to the modified example of the sixth embodiment of the present technology, an inclined surface is formed along the outer periphery of the frame material 220, so that a clamp-type glass removal jig 320 can be used, and adhesive is not required.

[0150] 7. Seventh Embodiment In the first embodiment described above, the lower surface of frame material 220 is bonded to the light-receiving surface (front surface) of glass 210, and the back surface of glass 210 is bonded to rib material 230. However, the present invention is not limited to this configuration. Semiconductor package 200 in this seventh embodiment differs from the first embodiment in that the back surface of glass 210 is bonded to the upper surface of frame material 220.

[0151] FIG. 37 is an example of a cross-sectional view of a semiconductor package 200 according to a seventh embodiment of the present technology. In the first embodiment, as illustrated in FIG. 2 , a frame material 220 including a frame-shaped frame portion and sidewall portions protruding downward along the outer periphery of the frame portion is used. In contrast, in the seventh embodiment, as illustrated in FIG. 37 , the frame material 220 includes a frame-shaped frame portion and innerwall portions protruding downward along the Z axis along the inner periphery of the frame portion. The portion above coordinate Z2 in the figure corresponds to the frame portion, and the portion below coordinate Z2 corresponds to the innerwall portion. Furthermore, the lower surface of the frame material 220 is bonded to the rib material 230, and the upper surface of the frame material 220 is bonded to the rear surface of the glass 210.

[0152] 16A, the rib material 230 may protrude into the cavity when the frame material 220 is mounted, making it impossible to ensure the cavity height. In addition, since the protruding rib material 230 may reach the pixel, it is necessary to ensure that the distance from the chip edge to the pixel is sufficiently long.

[0153] In contrast, in the configuration of FIG. 37, the thickness of the frame material 220 reduces the cavity height dZ ４ Since is defined, dZ ４ In addition, the L-shape of the frame material 220 can prevent the rib material 230 from excessively protruding. This makes it possible to reduce the distance dX from the chip end to the pixel 241. ６ 16A and 16B, which allows the semiconductor package 200 to be miniaturized and the chip to be shrunk.

[0154] Furthermore, in the first comparative example shown in Figure 4, which does not have a frame material 220, the side surfaces of the glass 210 are sealed with the sealing resin 250, and as mentioned above, stress concentration on the side surfaces can cause cracks in the glass 210.

[0155] 37, the sealing resin 250 does not contact the side surfaces of the glass 210 and seals the side surfaces of the frame material 220 and the sensor chip 240, so the amount of sealing resin can be reduced compared to the first comparative example. This reduces warping of the sensor chip 240 and suppresses cracks in the glass 210. Also, peeling of the rib material 230 is less likely to occur.

[0156] Next, a method for manufacturing the semiconductor package 200 according to the seventh embodiment will be described with reference to FIGS.

[0157] As shown in Fig. 38 a, the sensor chip 240 is die-bonded to the upper surface of the interposer substrate 260 in the wafer and wire-bonded with bonding wires 271. Then, as shown in Fig. 38 b, a rib material 230 is applied along the outer periphery of the sensor chip 240. Then, as shown in Fig. 38 c, a frame material 220 is adhered to the top of the rib material 230 and curing is performed. Then, as shown in Fig. 38 d, an adhesive 273 is applied to the upper surface of the frame material 220.

[0158] When mounting the frame material 220 at c in the figure, the rib material 230 may protrude slightly into the cavity due to the gap between the frame material 220 and the sensor chip 240, but excessive protrusion can be prevented by adjusting the gap to a sufficiently small size. Also, by not allowing the frame material 220 to come into contact with the sensor chip 240, damage to the sensor chip 240 can be avoided.

[0159] 39A, glass 210 is bonded to the upper surface of the frame material 220. Then, curing is performed as shown in FIG. 39B. Then, as shown in FIG. 39C, the side surfaces of the sensor chip 240 are sealed with sealing resin 250, and curing is performed.

[0160] 40A, a predetermined number of solder balls 272 are mounted on the back surface of the interposer substrate 260. Then, as shown in FIG. 40B, the wafer is diced into individual pieces, each consisting of an interposer substrate 260.

[0161] Fig. 41 is an example of a top view of the semiconductor package 200 and the lead frame 225 before bonding the frame material 220 according to the seventh embodiment of the present technology. The arrow "a" in the figure shows the top view at the time point "b" in Fig. 38. As illustrated in the arrow "a" in the figure, the rib material 230 is applied along the outer periphery of the sensor chip 240.

[0162] As shown in b in the figure, a lead frame 225 having a plurality of square-shaped openings is cut along dotted lines to produce a plurality of frame members 220. These frame members 220 are bonded to a rib member 230 shown in a in the figure.

[0163] 42 is an example of a top view of the semiconductor package 200 after bonding the frame member 220 according to the seventh embodiment of the present technology. This figure shows a top view at time c in FIG.

[0164] By using a thermoplastic resin or a hot melt material as the adhesive 273, the semiconductor package 200 can be shipped with the cavity temporarily sealed.

[0165] This allows the customer to easily remove the glass 210 by applying heat, as shown in FIG.

[0166] As described above, according to the seventh embodiment of the present technology, the L-shaped frame material 220 is bonded to the rib material 230, and the glass 210 is bonded to the upper surface of the frame material 220. This makes it possible to suppress protrusion of the rib material 230 and shorten the distance from the chip end to the pixel. Furthermore, it is possible to reduce warping of the sensor chip 240 and suppress cracking of the glass 210 and peeling of the rib material 230.

[0167] [Modification] In the seventh embodiment described above, the frame material 220 is L-shaped, but it is preferable to sufficiently suppress flare that occurs at the edge of the field of view. The semiconductor package 200 in this modification of the seventh embodiment differs from the seventh embodiment in that the inner wall of the frame material 220 has a reverse tapered shape.

[0168] Here, a description will be given of the flare that occurs in the first comparative example without the frame member 220 illustrated in FIG.

[0169] 44 a, in the first comparative example, near the center of the angle of view, light reflected from the light-receiving surface may be reflected again by the back surface of the glass 210, causing flare. This flare near the center of the angle of view can be suppressed by applying an anti-reflection (AR) coating to both sides of the glass 210 or by improving the device structure.

[0170] Furthermore, as illustrated in FIG. 1B, light reflected from the surface of the rib material 230 at the edge of the field of view or light transmitted through the rib material 230 may enter a pixel 241, causing flare.

[0171] As shown in Fig. 45A, flare at the edge of the field of view can be suppressed by forming a light-shielding film 211 around the periphery of the rear surface of the glass 210 to block light from entering the rib material 230. However, this measure increases manufacturing costs. Furthermore, as chips shrink, design limits may be reached, resulting in vignetting.

[0172] Also, as shown in FIG. 1B, the width of the rib material 230, dX ３ and the cavity height dZ ４Flare at the edge of the field of view can also be suppressed by increasing the distance between the rib material 230 and the pixel by adjusting the thickness of the rib material 230. However, there are many design parameters for the material, and this may not be practical.

[0173] Furthermore, as shown in Fig. 1C, flare at the edge of the field of view can also be suppressed by blackening the rib material 230 to reduce transmittance and reflectance, which is a more realistic measure than Fig. 1A and Fig. 1B.

[0174] 46A, silica filler 231 may be mixed into the rib material 230 to optimize the CTE (Coefficient of Thermal Expansion) of the material. In this case, as shown in FIG. 46B, even if the rib material 230 is blackened, light is reflected by the silica filler 231 exposed on the inner wall of the rib material 230, making it difficult to suppress flare at the edge of the field of view.

[0175] 47 is an example of a cross-sectional view of a semiconductor package 200 according to a modification of the seventh embodiment of the present technology. In the drawing, "a" shows a cross-sectional view of the semiconductor package 200, and "b" shows an enlarged view of a portion surrounded by a thick dotted line in "a" of the drawing.

[0176] As shown in Fig. 11A, in a modification of the seventh embodiment, a resin molded frame 221 is used as the frame material. As shown in Fig. 11B, the shape of the inner wall of the resin molded frame 221 is such that the opening area increases toward the bottom, in other words, it has an inverted tapered shape. In addition, to accommodate the bonding wire 271, the frame thickness at the wiring portion of the bonding wire 271 is made thinner than the inner side.

[0177] A black resin material or a low CTE material is used as the material for the resin molded frame 221. The resin molded frame 221 is subjected to surface treatment such as blasting, roughening, black painting, and imprinting. The surface treatment and selection of the black resin material ensure that the reflectance and transmittance of the resin molded frame 221 are sufficiently low.

[0178] As illustrated in FIG. 1B, by forming the inner wall of the resin molding frame 221 in an inverse tapered shape, almost no reflected light reaches the pixel 241, thereby suppressing flare at the edge of the field of view. In addition, by forming the inner wall of the resin molding frame 221 in an inverse tapered shape, the distance dX from the chip edge to the inner wall of the resin molding frame 221 is reduced. ８ This reduces the area required for bonding.

[0179] Furthermore, in the first comparative example, the shape of the rib material 230 cannot be controlled, resulting in a cross-sectional fillet shape that is wide at the top and bottom and narrow in the middle, causing light to directly reach the inner wall, resulting in reflection and scattering. In contrast, in the modified example of the seventh embodiment, the shape of the resin molded frame 221 can be controlled, and it can be made L-shaped or inverted tapered. This makes it less likely that light will directly hit the inner wall of the resin molded frame 221.

[0180] Furthermore, in the first comparative example, additional processing cannot be performed on the surface of the rib material 230 after assembly, which limits the suppression of flare. In contrast, in the seventh embodiment and its modified examples, surface processing for suppressing flare, such as black painting, is possible.

[0181] Furthermore, in the first comparative example, a special material, such as a black material, is required for the rib material 230. In contrast, in the seventh embodiment and its modified examples, no special material is required for the rib material 230, and conventional rib resin can be used as is.

[0182] 48, in a modification of the seventh embodiment, silica filler 231 can be mixed into the rib material 230. Even in this case, since the rib material 230 is hardly exposed inside the cavity, light is not reflected by the silica filler 231, unlike c in FIG. 46, and flare at the edge of the field of view can be suppressed.

[0183] 49 is an example of a top view of a resin molded frame 221 according to a modified example of the seventh embodiment of the present technology. For example, as illustrated in FIG. 49 a, the inner wall of the resin molded frame 221 preferably has an uneven shape when viewed from the Z-axis (optical axis) direction. Alternatively, as illustrated in FIG. 49 b, the inner wall preferably has a sawtooth shape. These shapes can disperse reflected light and sufficiently suppress flare.

[0184] As shown in Fig. 50, a metal-etched frame 222 can be used instead of the resin-molded frame 221. In this case, the metal-etched position can be changed to create a shape that is close to a reverse taper. The dashed line in Fig. 50 indicates the shape of the inner wall in the first comparative example.

[0185] The metal etching frame 222 is preferably made of a low CTE material such as 42 alloy or a high thermal conductivity material such as a copper alloy. The metal etching frame 222 may be subjected to surface treatments such as blasting, etching roughening, blackening, plating, or black painting. This surface treatment ensures that the reflectance and transmittance of the metal etching frame 222 are sufficiently low. The metal etching frame 222 also preferably has an inner wall with an uneven or sawtooth shape, as shown in FIGS. 49 a and 49 b.

[0186] Furthermore, when the resin molded frame 221 is mounted on the rib material 230, voids may occur on the lower surface of the resin molded frame 221.

[0187] Therefore, as shown in Fig. 51 a, it is preferable to provide air holes 223 along the Z-axis (optical axis) direction in the resin molded frame 221. In this case, as shown in the top view of Fig. 51 b, multiple air holes 223 are formed. This makes it possible to suppress the occurrence of voids.

[0188] As shown in FIG. 52, even when a metal etching frame 222 is used, it is preferable to provide an air hole 223.

[0189] As described above, according to the modification of the seventh embodiment of the present technology, the inner wall of the frame material such as the resin molded frame 221 has an inverse tapered shape, so that flare at the tip end can be suppressed.

[0190] 8. Eighth Embodiment In the above-described seventh embodiment, the sensor chip 240 is connected to a flat interposer substrate 260, but it is also possible to connect the sensor chip 240 to a ceramic substrate with a cavity structure. The semiconductor package 200 in this eighth embodiment differs from the seventh embodiment in that a ceramic substrate with a cavity structure is used.

[0191] 53A and 53B are examples of a cross-sectional view, a top view, and a bottom view of a semiconductor package 200 according to the eighth embodiment of the present technology. In the figure, "a" shows a cross-sectional view of the semiconductor package 200. In the figure, "b" shows a top view of the semiconductor package 200, and "c" shows a bottom view thereof.

[0192] As shown in the figure, in the eighth embodiment, a ceramic substrate 265 is used instead of the interposer substrate 260. Furthermore, the sealing resin 250 is not used.

[0193] The ceramic substrate 265 has a recess, and the space surrounded by the recess corresponds to a cavity. The sensor chip 240 is placed in the recess and is electrically connected to the ceramic substrate 265 by bonding wires 271. A predetermined number of lands 275 are provided on the lower surface of the ceramic substrate 265.

[0194] As shown in a, b, and c in the figure, the size of the outer periphery of the frame material 220 when viewed in the Z-axis (optical axis) direction is larger than the outer periphery of the ceramic substrate 265. The frame material 220 is bonded to the upper end of the ceramic substrate 265, and the cavity is sealed by the frame material 220. The frame material 220 has a plurality of fastening holes 224 formed near the outer periphery.

[0195] By making the frame material 220 L-shaped, it is possible to cover the inner side surface of the rib material 230 and suppress flare at the chip edge, as in the seventh embodiment. In addition, because the frame material 220 seals the cavity, it is possible to reduce flare caused by reflection from the bonding wires 271, such as gold.

[0196] Moreover, the modified example of the seventh embodiment having an inverse tapered shape can be applied to the eighth embodiment.

[0197] Metal, resin, or the like is used as the material for the frame material 220. To improve heat dissipation, it is preferable to use metal. As in the seventh embodiment, no special material is required for the rib material 230, and conventional rib resin can be used as is.

[0198] Furthermore, since the frame material 220 is L-shaped, the distance from the chip end to the pixel can be shortened, similar to the seventh embodiment, making it possible to reduce the size of the semiconductor package 200 and shrink the chip.

[0199] Furthermore, as in the seventh embodiment, by using a thermoplastic resin or a hot melt material as the adhesive between the frame material 220 and the ceramic substrate 265, the semiconductor package 200 can be shipped with the cavity temporarily sealed.

[0200] Next, a method for manufacturing the semiconductor package 200 according to the eighth embodiment will be described with reference to FIGS.

[0201] As shown in FIG. 54A, the sensor chip 240 is die-bonded in a cavity of the ceramic substrate 265. Then, as shown in FIG. 54B, the sensor chip 240 is wire-bonded using bonding wires 271. Then, as shown in FIG. 54C, the rib material 230 is applied along the outer periphery of the sensor chip 240, and the adhesive 273-1 is applied along the outer periphery of the ceramic substrate 265. In this process, in order to mount the frame material 220 parallel to the rib material 230, the amounts of the rib material 230 and the adhesive 273-1 are adjusted so that the heights of the rib material 230 and the adhesive 273-1 are approximately the same. In FIG. 54C, the height is adjusted to Z4. Then, as shown in FIG. 54D, the frame material 220 is mounted on top of the rib material 230.

[0202] Next, curing is performed as shown in Fig. 55a. Then, as shown in Fig. 55b, adhesive 273-2 is applied to the upper surface of the frame material 220, and glass 210 is mounted. Then, curing is performed as shown in Fig. 55c.

[0203] 56 is a cross-sectional view showing an example of mounting the semiconductor package 200 in each of the first comparative example and the eighth embodiment of the present disclosure. In the drawing, "a" shows the example of mounting the semiconductor package 200 in the first comparative example, and "b" shows the example of mounting the semiconductor package 200 in the eighth embodiment.

[0204] As illustrated in FIG. 10A, the semiconductor package 200 of the first comparative example is mounted on a mounting board 353, and the mounting board 353 is connected to a camera housing 351. In the first comparative example, an opening is formed in the mounting board 353 to conduct heat from the semiconductor package 200 to the camera housing 351, and a heat dissipation member 354 is disposed in the opening. The upper end of the heat dissipation member 354 is connected to the lower surface of the semiconductor package 200, and the lower end is connected to the camera housing 351.

[0205] On the other hand, as illustrated in FIG. 11B, in the eighth embodiment, a fastener 352 is connected to the fastening hole 224 of the semiconductor package 200. The upper end of the fastener 352 is connected to the camera housing 351, and the lower end is connected to the mounting board 353. Heat generated in the semiconductor package 200 is dissipated to the camera housing 351 via the fastener 352. In this way, in the eighth embodiment, heat can be dissipated via the fastener 352, and therefore the heat dissipation member 354 and the space for the heat dissipation member 354 as in the first comparative example are not required.

[0206] As described above, according to the eighth embodiment of the present technology, a ceramic substrate 265 with a cavity structure is used and fastening holes are provided in the frame material 220, so there is no need to provide a heat dissipation member 354 on the underside of the semiconductor package 200.

[0207] 9. Ninth Embodiment In the seventh embodiment described above, one sensor chip 240 is provided in the semiconductor package 200, but it is also possible to arrange a plurality of devices to configure a SiP (System in Package). The semiconductor package 200 in this ninth embodiment differs from the seventh embodiment in that a plurality of devices are arranged.

[0208] 57 is an example of a cross-sectional view of a semiconductor package 200 according to a second comparative example and the ninth embodiment of the present technology. In the drawing, "a" shows a cross-sectional view of the semiconductor package 200 according to the second comparative example, which does not use a frame material 220 and a rib material 230. In the drawing, "b" shows a cross-sectional view of the semiconductor package 200 according to the ninth embodiment of the present technology.

[0209] As illustrated in FIG. 10A, the semiconductor package 200 of the second comparative example is provided with sensor chips 240 and 245, an LED (light emitting diode) 281, and an LED driver 282. The sensor chips 240 and 245 are examples of the first and second semiconductor chips set forth in the claims.

[0210] The LED 281 emits IR (Infra-Red) light as irradiation light. The sensor chip 240 receives visible light such as RGB (Red, Green, Blue) and generates image data. The sensor chip 245 receives reflected light (i.e., IR light) from the irradiation light and measures distance using the ToF (Time of Flight) method. The LED driver 282 drives the LED 281. These devices are connected to the interposer substrate 260. The periphery of each device is sealed with sealing resin 250.

[0211] On the other hand, as shown in FIG. 10B, in the ninth embodiment, a rib member 230 and an L-shaped frame member 220 are provided for each device, similar to the seventh embodiment.

[0212] As shown in FIG. 10A, in the second comparative example, it is necessary to provide an area for connecting the bonding wires in each cavity of the sensor chips 240 and 245. On the other hand, as shown in FIG. 10B, in the ninth embodiment, the bonding wires 271 are sealed with the sealing resin 250, so the area for connecting the bonding wires is built into the sealing resin 250. This allows the size of the semiconductor package 200 to be smaller than that of the second comparative example. Note that various other chip components can also be mounted in FIG. 10B.

[0213] 58 is an example of a top view of a semiconductor package in Comparative Example 2. As illustrated in FIG. 58A, sensor chips 240 and 245, an LED 281, and an LED driver 282 are arranged in the X-axis direction.

[0214] Note that the devices may be arranged in an array, as illustrated in Fig. 1B. For example, LED 281-1, sensor chip 240, and LED driver 282-1 are arranged in the Y-axis direction, and adjacent to that row, LED 281-2, sensor chip 245, and LED driver 282-2 are also arranged in the Y-axis direction.

[0215] 59 is an example of a top view of a semiconductor package according to the ninth embodiment of the present technology. As illustrated in FIG. 59 a, sensor chips 240 and 245, an LED 281, and an LED driver 282 are arranged in the X-axis direction. As illustrated in FIG. 59 b, the devices can also be arranged in an array. As illustrated in FIG. 59 a and b, the size of the semiconductor package can be made smaller than that of the second comparative example.

[0216] Next, a method for manufacturing the semiconductor package 200 according to the ninth embodiment will be described with reference to FIGS.

[0217] As shown in Fig. 60A, sensor chips 240 and 245, an LED 281, and an LED driver 282 are die-bonded to an interposer substrate 260. Then, as shown in Fig. 60B, each device is wire-bonded with a bonding wire 271. Then, as shown in Fig. 60C, a rib material 230 is applied along the periphery of each device. Then, as shown in Fig. 60D, a frame material 220 is mounted on each device.

[0218] Next, as shown in FIG. 61A, the periphery of each device is sealed with sealing resin 250. At this time, a plurality of devices can be collectively sealed by clamping them with a molding die (not shown). Then, as shown in FIG. 61B, adhesive is applied and glass 210 is mounted. Note that glass can also be mounted for each device. Then, curing is performed as shown in FIG. 61C.

[0219] 62 is a diagram for explaining the effect of sealing in the ninth embodiment of the present technology. When the first comparative example is applied to a SiP, as illustrated in FIG. 62 a release film 362 is attached and sealing is performed in a state where the SiP is clamped by a molding die 361. In this first comparative example, depending on the formation state of the rib material 230, the glass 210 may be tilted, which may cause burrs in the sealing resin 250 or damage to the release film 362.

[0220] In contrast to this, in the ninth embodiment, the upper surface of the frame material 220 is flat as shown in FIG. 11B, so that the occurrence of burrs and damage during sealing can be suppressed.

[0221] Moreover, the modified example of the seventh embodiment having an inverse tapered shape can be applied to the ninth embodiment.

[0222] Thus, according to the ninth embodiment of the present technology, multiple devices are arranged within the semiconductor package 200, and a frame material 220 and a rib material 230 are provided for each device, thereby making it possible to reduce the size compared to the second comparative example.

[0223] 10. Application Examples to Mobile Bodies The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of mobile body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0224] FIG. 63 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology of the present disclosure can be applied.

[0225] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 63, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 12053.

[0226] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0227] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0228] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc. based on the received images.

[0229] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0230] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0231] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, vehicle lane departure warning, etc.

[0232] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0233] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0234] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to vehicle occupants or the outside of the vehicle. In the example of Fig. 63, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0235] FIG. 64 is a diagram showing an example of the installation position of the imaging unit 12031.

[0236] In FIG. 64, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0237] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided on the front nose and the imaging unit 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided on the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0238] 64 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, an overhead image of the vehicle 12100 viewed from above can be obtained.

[0239] At least one of the image capturing units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image capturing units 12101 to 12104 may be a stereo camera made up of multiple image capturing elements, or may be an image capturing element having pixels for phase difference detection.

[0240] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation.

[0241] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines a collision risk that indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0242] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the images captured by the image capturing units 12101 to 12104. Such pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104 as infrared cameras and performing pattern matching on a series of feature points that indicate the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0243] The above describes an example of a vehicle control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to, for example, the image capturing unit 12031 among the components described above. Specifically, the semiconductor package 200 in FIG. 2 can be applied to the image capturing unit 12031. By applying the technology according to the present disclosure to the image capturing unit 12031, cracks in the glass can be suppressed and a more easily viewable captured image can be obtained, thereby reducing driver fatigue.

[0244] Note that the above-described embodiment shows an example for realizing the present technology, and the matters in the embodiment and the matters specifying the invention in the claims correspond to each other. Similarly, the matters specifying the invention in the claims and the matters in the embodiment of the present technology having the same name correspond to each other. However, the present technology is not limited to the embodiment, and can be realized by applying various modifications to the embodiment within the scope of the gist thereof.

[0245] The effects described in this specification are merely examples and are not limiting, and other effects may also be obtained.

[0246] The present technology can also be configured as follows. (1) A semiconductor package comprising: a semiconductor chip; a substrate connected to a light-receiving surface of the semiconductor chip by a bonding wire; a rib material formed along the periphery of the light-receiving surface of the semiconductor chip; a transparent member; a frame material covering at least one of a portion of a back surface of the transparent member, which is one of both surfaces of the transparent member that does not correspond to the light-receiving surface, and a side surface of the transparent member; and a sealing resin that seals the side surface of the semiconductor chip. (2) The semiconductor package according to (1), wherein the transparent member is bonded to the rib member, and the frame material comprises a frame portion that is a frame-shaped member and a side wall portion that protrudes in the optical axis direction along the periphery of the frame portion. (3) The semiconductor package according to (2), wherein the frame portion covers a portion of the light-receiving surface of the transparent member. (4) The semiconductor package according to (2), wherein the frame portion is disposed between the back surface of the transparent member and the rib material. (5) The semiconductor package according to (4), wherein the cross-sectional shape of the side wall portion is tapered. (6) The semiconductor package according to (1), wherein the frame material is a flat frame-shaped member disposed between the rear surface of the transparent member and the rib material. (7) The semiconductor package according to (6), wherein the size of the transparent member in a predetermined direction parallel to the light-receiving surface does not exceed the size of the frame. (8) The semiconductor package according to (6), wherein the size of the transparent member in a predetermined direction parallel to the light-receiving surface is greater than the size of the frame. (9) The semiconductor package according to (6), wherein the frame material is a porous member. (10) The semiconductor package according to (6), wherein the frame material has a predetermined number of slits formed along a direction perpendicular to the light-receiving surface. (11) The semiconductor package according to (1), wherein the frame material has a frame portion that is a frame-shaped member and an inner wall portion that protrudes in the optical axis direction along the inner periphery of the frame portion, and the transparent member is adhered to the frame material. (12) The semiconductor package according to (11), wherein a recess is formed in the substrate, the semiconductor chip is disposed in the recess, and fastening holes are formed in the frame material. (13) The semiconductor package according to (11), wherein the semiconductor chip includes a first and a second semiconductor chip.(14) The semiconductor package according to any one of (11) to (13), wherein the inner wall of the frame material has an inverted tapered shape. (15) A semiconductor package comprising: a substrate having a recess formed therein; a semiconductor chip disposed in the recess and electrically connected to the substrate by wire bonding; a transparent member sealing the recess; and a frame material formed around the transparent member. (16) A semiconductor package comprising: a substrate having a recess and a sidewall portion protruding in the optical axis direction along the outer periphery of the recess; a semiconductor chip disposed in the recess and electrically connected to the substrate by wire bonding; and a transparent member sealing the recess. (17) A semiconductor package comprising: a substrate having a recess formed therein with a step on the outer periphery; a semiconductor chip disposed in the recess and electrically connected to the substrate by wire bonding; and a transparent member sealing the recess. (18) A semiconductor package comprising: a substrate having a recess formed therein; a semiconductor chip disposed in the recess and electrically connected to the substrate by wire bonding; and a transparent member that is larger than the substrate in a predetermined direction parallel to the plane of the substrate and seals the recess. (19) A semiconductor package comprising: a semiconductor chip; a substrate connected to a light-receiving surface of the semiconductor chip by a bonding wire; a frame material having a frame portion formed along the outer periphery of the light-receiving surface of the semiconductor chip and a tapered sidewall portion protruding along the outer periphery of the frame portion; and a transparent member adhered to the frame portion. (20) A semiconductor package comprising: a semiconductor chip; a substrate connected to the light-receiving surface of the semiconductor chip by a bonding wire; a frame material having an adhesive surface parallel to the light-receiving surface and an inclined surface formed along the outer periphery; and a transparent member adhered to the adhesive surface.(21) A semiconductor device comprising: a semiconductor package including a semiconductor chip, a substrate connected to the light-receiving surface of the semiconductor chip by a bonding wire, a rib material formed along the periphery of the light-receiving surface of the semiconductor chip, a transparent member bonded to the rib material, a frame member covering at least one of a portion of the back surface of the transparent member, which is one of the two surfaces of the transparent member that does not correspond to the light-receiving surface, and a sealing resin that seals the side surface of the semiconductor chip, and an optical unit that collects incident light and guides it to the semiconductor chip. (22) A method for manufacturing a semiconductor package, comprising the steps of: connecting the light-receiving surface of the semiconductor chip to a substrate by a bonding wire, forming a rib material along the periphery of the light-receiving surface of the semiconductor chip, bonding the transparent member to the rib material, bonding a frame member to the transparent member, which covers at least one of the side surface of the transparent member, and a portion of the back surface of the transparent member, which is one of the two surfaces of the transparent member that does not correspond to the light-receiving surface, and

[0247] 100 Semiconductor device 110 Optical unit 111 Lens housing 120 DSP circuit 130 Display unit 140 Operation unit 150 Bus 160 Frame memory 170 Storage unit 180 Power supply unit 200 Semiconductor package 210 Glass 211 Light-shielding film 220 Frame material 221 Resin molded frame 222 Metal etching frame 223 Air hole 224 Fastening hole 225 Lead frame 230 Rib material 231 Silica filler 240, 245 Sensor chip 241 Pixel 250 Sealing resin 260 Interposer substrate 265 Ceramic substrate 271 Bonding wire 271-1, 271-2 Bonding pad 272 Solder ball 273, 273-1, 273-2 Adhesive 274 Sealing resin 275 Land 281, 281-1, 281-2 LED 282, 282-1, 282-2 LED driver 310, 320 Glass removal jig 351 Camera housing 352 Fastener 353 Mounting board 354 Heat dissipation member 361 Molding die 362 Release film 12031 Imaging unit

Claims

1. A semiconductor package comprising: a semiconductor chip; a substrate connected to the light-receiving surface of the semiconductor chip by a bonding wire; a rib material formed along the outer periphery of the light-receiving surface of the semiconductor chip; a transparent member; a frame material covering at least one of a portion of the back surface of the transparent member, which is the surface that does not correspond to the light-receiving surface, and a side surface of the transparent member; and a sealing resin that seals the side surface of the semiconductor chip.

2. A semiconductor package as claimed in claim 1, wherein the transparent member is adhered to the rib member, and the frame member comprises a frame portion which is a frame-shaped member, and a side wall portion which protrudes in the optical axis direction along the outer periphery of the frame portion.

3. The semiconductor package according to claim 2, wherein the frame covers a portion of the light-receiving surface of the transparent member.

4. The semiconductor package according to claim 2, wherein the frame is disposed between the rear surface of the transparent member and the rib material.

5. A semiconductor package according to claim 4, wherein the cross-sectional shape of said sidewall portion is tapered.

6. The semiconductor package according to claim 1, wherein the frame member is a flat frame-shaped member disposed between the rear surface of the transparent member and the rib member.

7. A semiconductor package according to claim 6, wherein the size of said transparent member in a predetermined direction parallel to said light receiving surface does not exceed the size of said rib material.

8. The semiconductor package according to claim 6, wherein the size of said transparent member in a predetermined direction parallel to said light receiving surface is larger than the size of said rib material.

9. The semiconductor package according to claim 6, wherein said frame material is a porous material.

10. A semiconductor package according to claim 6, wherein said frame member has a predetermined number of slits formed along a direction perpendicular to said light-receiving surface.

11. A semiconductor package as described in claim 1, wherein the frame material comprises a frame portion which is a frame-shaped member and an inner wall portion which protrudes in the optical axis direction along the inner periphery of the frame portion, and the transparent member is adhered to the frame material.

12. The semiconductor package according to claim 11, wherein a recess is formed in the substrate, the semiconductor chip is placed in the recess, and fastening holes are formed in the frame material.

13. The semiconductor package of claim 11, wherein the semiconductor chips include first and second semiconductor chips.

14. The semiconductor package according to claim 11, wherein the inner wall of the frame material has a reverse tapered shape.

15. A semiconductor package comprising: a substrate having a recess formed therein; a semiconductor chip disposed in the recess and electrically connected to the substrate by wire bonding; a transparent member sealing the recess; and a frame member formed around the transparent member.

16. A semiconductor package comprising: a substrate on which a recess and a sidewall portion protruding in the optical axis direction along the outer periphery of the recess are formed; a semiconductor chip disposed in the recess and electrically connected to the substrate by wire bonding; and a transparent member sealing the recess.

17. A semiconductor package comprising: a substrate having a recess with a step on its outer periphery; a semiconductor chip disposed in the recess and electrically connected to the substrate by wire bonding; and a transparent member sealing the recess.

18. A semiconductor package comprising: a substrate having a recess formed therein; a semiconductor chip disposed in the recess and electrically connected to the substrate by wire bonding; and a transparent member that is larger than the substrate in a predetermined direction parallel to the plane of the substrate and seals the recess.

19. A semiconductor package comprising: a semiconductor chip; a substrate connected to the light-receiving surface of the semiconductor chip by a bonding wire; a frame material having a frame portion formed along the outer periphery of the light-receiving surface of the semiconductor chip and a tapered sidewall portion protruding along the outer periphery of the frame portion; and a transparent member adhered to the frame portion.

20. A semiconductor package comprising: a semiconductor chip; a substrate connected to the light-receiving surface of the semiconductor chip by a bonding wire; a frame material having an adhesive surface parallel to the light-receiving surface and an inclined surface formed along the periphery; and a transparent member adhered to the adhesive surface.

21. A semiconductor device comprising: a semiconductor package including a semiconductor chip; a substrate connected to the light-receiving surface of the semiconductor chip by a bonding wire; a rib material formed along the periphery of the light-receiving surface of the semiconductor chip; a transparent member bonded to the rib material; a frame material covering at least one of a portion of the back surface of the transparent member, which is the surface that does not correspond to the light-receiving surface, and a side surface of the transparent member; and a sealing resin that seals the side surface of the semiconductor chip; and an optical unit that collects incident light and guides it to the semiconductor chip.

22. A method for manufacturing a semiconductor package, comprising the steps of: connecting the light-receiving surface of a semiconductor chip to a substrate with a bonding wire; forming a rib material along the outer periphery of the light-receiving surface of the semiconductor chip; adhering a transparent material to the rib material; adhering a frame material to the transparent material, the frame covering at least one of a portion of the back surface of the transparent material, which is the surface that does not correspond to the light-receiving surface, and the side surface of the transparent material; and sealing the side surface of the semiconductor chip with a sealing resin.

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