Laser and light source device

Abstract

A laser and a light source device. The laser comprises: a substrate (100), a frame body (200) and light-emitting chips (300). The substrate (100) comprises connecting portions (103), and the frame body (200) is connected to the connecting portions (103). The area of connection regions between the connecting portions (103) of the substrate (100) and the frame body (200) is smaller than the area of the surface of the frame body (200) facing the connecting portions (103). In this way, when the frame body (200) is connected to the connecting portions (103) by means of welding to achieve the fixed connection between the frame body (200) and the substrate (100), the area of welding regions between the frame body (200) and the connecting portions (103) is smaller than the area of the surface of the frame body (200) facing the connecting portions (103), thus reducing the contact area between the frame body (200) and the substrate (100), that is, reducing the welding area between the frame body (200) and the substrate (100). Consequently, after the connecting portions (103) and the frame body (200) are welded together, the residual stress between the frame body (200) and the substrate (100) is relatively low, and the reliability of the connection between the frame body (200) and the substrate (100) is relatively high.

Description

Laser and light source device

[0001] The present application claims priority to Chinese Patent Application No. 202411291199.8, filed on September 13, 2024, entitled "Laser and Light Source Device", and Chinese Patent Application No. 202411347146.3, filed on September 25, 2024, entitled "Laser", the contents of both of which are incorporated herein by reference in their entirety. TECHNICAL FIELD

[0002] The present application relates to the field of optoelectronic technology, and in particular to a laser and a light source device. BACKGROUND

[0003] With the development of optoelectronic technology, lasers are increasingly widely used, for example, lasers can be used in welding processes, cutting processes, and laser displays.

[0004] A laser typically includes a packaging structure and a light-emitting chip. The packaging structure typically includes a substrate and a frame, the frame and the light-emitting chip can be fixed on the substrate, and the frame can surround the light-emitting chip. Currently, the frame is typically fixedly connected to the substrate by welding.

[0005] However, after the current frame and the substrate are fixedly connected together by welding, the residual stress between the frame and the substrate is large, resulting in low reliability of the packaging structure. SUMMARY

[0006] Embodiments of the present application provide a laser and a light source device. The technical solution can solve the problem of low reliability of welding between the frame and the substrate in the laser of the prior art, and the technical solution is as follows:

[0007] In a first aspect, a laser is provided, including: a substrate, a frame, and a light-emitting chip.

[0008] The substrate includes a substrate body, a support table, and a connecting portion, the support table and the connecting portion are both disposed on the substrate body.

[0009] The frame is distributed around the support table, and the frame is connected to the connecting portion.

[0010] The light-emitting chip is fixedly connected to a side of the support table that is away from the substrate body.

[0011] The area of the connecting region between the connecting portion and the frame is less than the area of a side of the frame that faces the connecting portion.

[0012] The technical scheme provided by the embodiments of the present application has at least the following beneficial effects: the substrate in the laser can include a connecting portion, and the frame in the laser can be connected with the connecting portion. The area of the connecting region between the connecting portion in the substrate and the frame can be smaller than the area of the surface of the frame facing the connecting portion. In this way, in the case that the frame is connected with the connecting portion by welding to achieve the fixed connection of the frame and the substrate, the area of the welding region between the frame and the connecting portion can be smaller than the area of the surface of the frame facing the connecting portion. Therefore, compared with the prior art in which the surface of the frame facing the substrate is welded with the substrate, the frame in the present application is fixedly connected with the substrate by welding with the connecting portion, which reduces the contact area between the frame and the substrate, that is, reduces the welding area between the frame and the substrate, and further reduces the residual stress between the frame and the substrate after the connecting portion and the frame are welded together, thereby improving the reliability of the connection between the frame and the substrate.

[0013] In a second aspect, in some embodiments, a laser is provided, the laser comprising:

[0014] a substrate;

[0015] at least one tube shell, the tube shell being made of a material different from that of the substrate, the tube shell having axially oppositely arranged first and second ends, the first end being fixedly connected with the substrate, the tube shell and the substrate enclosing a receiving space;

[0016] a plurality of light emitting chips located in the receiving space and attached to the surface of the substrate, the light emitting chips being configured to emit laser light;

[0017] at least one light-transmitting sealing cover plate, the light-transmitting sealing cover plate being fixedly connected with the second end, the light-transmitting sealing cover plate being configured to seal the receiving space;

[0018] the substrate includes a metal body and a diamond layer provided on the surface of the metal body, the diamond layer being distributed with diamond particles;

[0019] the substrate includes an enclosed region covered by the axial projection of the outer contour of the first end and an external region outside the enclosed region, the enclosed region being provided with the diamond layer, and the external region being not provided with the diamond layer.

[0020] The technical scheme has the following advantages or beneficial effects: the diamond layer is arranged in the enclosed area of the substrate, so that the thermal expansion coefficient matching of the substrate and the tube shell is improved, the stress problem of the connection between the tube shell and the substrate is improved, and the connection reliability of the tube shell and the substrate is improved. Meanwhile, the thermal conductivity of the light-emitting chip arrangement area on the substrate is improved, the heat dissipation problem of the light-emitting chip is improved, and the use reliability of the laser is improved. The diamond layer is arranged on the surface of the metal body, and the diamond particles are not arranged in the external area of the substrate, so that the use amount of the diamond particles is reduced, and the cost is reduced.

[0021] In a third aspect, some embodiments further provide a laser, comprising:

[0022] a substrate;

[0023] at least one tube shell, the material of the tube shell being different from the material of the substrate, the tube shell having axially oppositely arranged first and second ends, the first end being fixedly connected with the substrate, and the tube shell and the substrate enclosing a containing space;

[0024] a plurality of light-emitting chips arranged in the containing space and attached to the surface of the substrate, the light-emitting chips being used for emitting laser;

[0025] at least one light-transmitting sealing cover plate, the light-transmitting sealing cover plate being fixedly connected with the second end, and the light-transmitting sealing cover plate being used for sealing the containing space;

[0026] The substrate comprises an enclosed area covered by the axial projection of the outer contour of the first end and an external area outside the enclosed area; the substrate comprises a metal body and diamond particles doped in the metal body of the enclosed area, and the metal body of the external area is not doped with the diamond particles.

[0027] The technical scheme has the following advantages or beneficial effects: the diamond particles are doped in the metal body of the enclosed area of the substrate, and the adjustment effect of the thermal expansion coefficient and the thermal conductivity of the enclosed area on the substrate is better. The thermal expansion coefficient matching of the substrate and the tube shell is improved, the stress problem of the connection between the tube shell and the substrate is improved, and the connection reliability of the tube shell and the substrate is improved. Meanwhile, the thermal conductivity of the light-emitting chip arrangement area on the substrate is improved, the heat dissipation performance is improved, and the use reliability of the laser is improved. The use amount of the diamond particles is reduced by not doping the diamond particles in the metal body of the external area, and the cost is reduced.

[0028] In a fourth aspect, some embodiments further provide a laser, comprising: a circuit board;

[0029] at least one substrate, the substrate being fixedly connected with the circuit board;

[0030] at least one tube shell, the tube shell being made of a material different from that of the substrate, the tube shell having axially oppositely arranged first and second ends, the first end being fixedly connected with the substrate, the tube shell and the substrate enclosing a receiving space; an outer contour of the first end axially projects over the substrate;

[0031] a plurality of light emitting chips, located in the receiving space and attached to a surface of the substrate, the light emitting chips being configured to emit laser light;

[0032] at least one light-transmitting sealing cover plate, fixedly connected with the second end, the light-transmitting sealing cover plate being configured to seal the receiving space;

[0033] the substrate comprises a metal body and a diamond layer arranged on a surface of the metal body, the diamond layer being distributed with diamond particles; a surface of the substrate comprises a first region configured to fix the tube shell and a second region configured to attach the light emitting chips;

[0034] the diamond layer in the first region is arranged with a first volume fraction of diamond particles, the diamond layer in the second region is arranged with a second volume fraction of diamond particles, and the second volume fraction is greater than the first volume fraction.

[0035] The technical solution has the following advantages or beneficial effects: the diamond layer arranged in the first region of the substrate to fix the tube shell and the second region to attach the light emitting chips can improve the stress problem of the connection between the tube shell and the substrate, and improve the connection reliability of the tube shell and the substrate. By arranging the second volume fraction to be greater than the first volume fraction, the second region of the substrate to attach the light emitting chips can have a higher thermal conductivity, which can improve the heat dissipation problem of the light emitting chips and improve the use reliability of the laser. By arranging the diamond layer on the surface of the metal body, the use amount of diamond particles can be reduced, and the cost can be reduced.

[0036] In a fifth aspect, a light source device is provided, comprising a housing and a laser installed on the housing, the laser being any of the above-described lasers. BRIEF DESCRIPTION OF DRAWINGS

[0037] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings needed in the embodiment description. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0038] FIG. 1 is an exploded view of a laser provided by an embodiment of the present application;

[0039] FIG. 2 is a sectional view of a laser according to an embodiment of the present application;

[0040] FIG. 3 is a top view of a substrate according to an embodiment of the present application;

[0041] FIG. 4 is a top view of another substrate according to an embodiment of the present application;

[0042] FIG. 5 is a top view of yet another substrate according to an embodiment of the present application;

[0043] FIG. 6 is an exploded view of another laser according to an embodiment of the present application;

[0044] FIG. 7 is a sectional view of another laser according to an embodiment of the present application;

[0045] FIG. 8 is a structural schematic diagram of a substrate according to an embodiment of the present application;

[0046] FIG. 9 is a structural schematic diagram of another substrate according to an embodiment of the present application;

[0047] FIG. 10 is an exploded view of yet another laser according to an embodiment of the present application;

[0048] FIG. 11 is a sectional view of still another laser according to an embodiment of the present application;

[0049] FIG. 12 is a comparison diagram of a prior art and the present application according to an embodiment of the present application;

[0050] FIG. 13 is a structural schematic diagram of a laser according to an embodiment of the present application;

[0051] FIG. 14 is a top view of a laser according to an embodiment of the present application;

[0052] FIG. 15 is a top view of a light transmission hole of a frame according to an embodiment of the present application;

[0053] FIG. 16 is a structural schematic diagram of a laser in the related art;

[0054] FIG. 17 is a three-dimensional structural schematic diagram of a laser according to an embodiment of the present application;

[0055] FIG. 18 is a sectional schematic diagram of a laser according to an embodiment of the present application;

[0056] FIG. 19 is an exploded view of a laser according to an embodiment of the present application;

[0057] FIG. 20 is an optical path schematic diagram of a laser according to an embodiment of the present application;

[0058] FIG. 21 is a three-dimensional structural schematic diagram of a tube shell and a substrate according to an embodiment of the present application;

[0059] FIG. 22 is a top view of a tube shell and a substrate according to an embodiment of the present application;

[0060] FIG. 23 is a cross-sectional view of another laser according to an embodiment of the present application;

[0061] FIG. 24 is a perspective view of another laser according to an embodiment of the present application;

[0062] FIG. 25 is a cross-sectional view of another laser according to an embodiment of the present application;

[0063] FIG. 26 is a perspective view of another laser according to an embodiment of the present application;

[0064] FIG. 27 is an exploded view of another laser according to an embodiment of the present application;

[0065] FIG. 28 is a cross-sectional view of another laser according to an embodiment of the present application. DETAILED DESCRIPTION

[0066] To make the objectives, technical solutions and advantages of the present application clearer, the embodiments of the present application will be further described in detail below with reference to the drawings.

[0067] An embodiment of the present application provides a laser, referring to FIG. 1 and FIG. 2, FIG. 1 is an exploded view of a laser according to an embodiment of the present application, and FIG. 2 is a cross-sectional view of a laser according to an embodiment of the present application. The laser can include a substrate 100, a frame 200 and a light-emitting chip 300.

[0068] The substrate 100 in the laser can include a substrate body 101, a support table 102 and a connecting portion 103. The support table 102 and the connecting portion 103 in the substrate 100 can be arranged on the substrate body 101.

[0069] The frame 200 in the laser can surround the support table 102 in the substrate 100, and the frame 200 can be connected with the connecting portion 103 in the substrate 100. Here, the frame 200 can be welded with the connecting portion 103 to achieve fixed connection of the frame 200 and the substrate 100.

[0070] The light-emitting chip 300 in the laser can be fixedly connected with the side of the support table 102 in the substrate 100 which is away from the substrate body 101. The light-emitting chip 300 fixed on the support table 102 can be used to emit laser light to achieve light emission of the laser.

[0071] In the present application, the area of the connecting region between the connecting portion 103 in the substrate 100 and the frame 200 can be smaller than the area of the side of the frame 200 facing the connecting portion 103. Here, the area of the connecting region between the connecting portion 103 and the frame 200 is the area of the side of the connecting portion 103 facing the frame 200, that is, the area of the side of the connecting portion 103 facing the frame 200 can be smaller than the area of the side of the frame 200 facing the connecting portion 103. In this way, in the case where the frame 200 is connected to the connecting portion 103 by welding to achieve fixed connection of the frame 200 and the substrate 100, the area of the welding region between the frame 200 and the connecting portion 103 can be smaller than the area of the side of the frame 200 facing the connecting portion 103. Therefore, compared with the prior art in which the side of the frame 200 facing the substrate 100 is welded to the substrate 100, the frame 200 in the present application is fixedly connected to the substrate 100 by welding to the connecting portion 103, which can reduce the contact area between the frame 200 and the substrate 100, that is, reduce the welding area between the frame 200 and the substrate 100, and further reduce the residual stress between the frame 200 and the substrate 100 after the connecting portion 103 and the frame 200 are welded together, thereby improving the reliability of the connection between the frame 200 and the substrate 100.

[0072] It should be noted that, in the direction perpendicular to the extension direction of the connecting portion 103, the width D1 of the region where the connecting portion 103 in the substrate 100 contacts the frame 200 can be smaller than the width D2 of the frame 200. Here, in the direction perpendicular to the extension direction of the connecting portion 103, the width D1 of the region where the connecting portion 103 contacts the frame 200 is the width of the connecting portion 103, that is, the width of the connecting portion 103 can be smaller than the width D2 of the frame 200. In this way, the area of the side of the connecting portion 103 facing the frame 200 can be smaller than the area of the side of the frame 200 facing the connecting portion 103.

[0073] In conclusion, the embodiment of the present application provides a laser, comprising a substrate, a frame and a light emitting chip. The substrate can comprise a connecting portion, and the frame can be connected with the connecting portion. The area of the connecting region between the connecting portion in the substrate and the frame can be smaller than the area of the side of the frame facing the connecting portion. In this way, in the case that the frame is connected with the connecting portion by welding to realize the fixed connection of the frame and the substrate, the area of the welding region between the frame and the connecting portion can be smaller than the area of the side of the frame facing the connecting portion. Therefore, compared with the prior art in which the side of the frame facing the substrate is welded with the substrate, the frame in the present application is fixedly connected with the substrate by welding with the connecting portion, which reduces the contact area between the frame and the substrate, that is, reduces the welding area between the frame and the substrate, and further reduces the residual stress between the frame and the substrate after the connecting portion and the frame are welded together, thereby improving the reliability of the connection between the frame and the substrate.

[0074] In the present application, the connection between the connecting portion 103 in the substrate 100 and the frame 200 can have the following two implementation manners:

[0075] In the first implementation manner, as shown in FIG. 1, the side of the connecting portion 103 in the substrate 100 facing away from the substrate body 101 can be connected with the side of the frame 200 facing the substrate body 101. That is, in the direction perpendicular to the side of the substrate body 101 on which the support table 102 is distributed, the side of the connecting portion 103 facing away from the substrate body 101 can be connected with the side of the frame 200 facing the substrate body 101. In this way, the area of the side of the connecting portion 103 facing the frame 200 in the direction parallel to the side of the substrate body 101 on which the support table 102 is distributed can be smaller than the area of the side of the frame 200 facing the connecting portion 103.

[0076] In the embodiment of the present application, the connecting portion 103 in the substrate 100 can have various forms, and the embodiment of the present application will be described by taking the following two possible cases as examples:

[0077] In the first possible case, please refer to FIG. 3, which is a top view of a substrate provided by the embodiment of the present application. The connecting portion 103 in the substrate 100 can be annular, and the support table 102 can be located in the area surrounded by the connecting portion 103. That is, the connecting portion 103 in the substrate 100 can extend around the support table 102. For example, in the case that the orthographic projection of the support table 102 on the substrate body 101 is rectangular, the area surrounded by the annular connecting portion 103 can also be rectangular.

[0078] In the second possible case, referring to FIG. 4, which is a top view of another substrate provided by an embodiment of the present application, the connecting portion 103 in the substrate 100 can include a plurality of sub-connecting segments 1031, the plurality of sub-connecting segments 1031 in the connecting portion 103 can be distributed around the support platform 102, and there can be a partition groove between any two adjacent sub-connecting segments 1031 on the periphery of the support platform 102. In this way, the side of the frame 200 facing the substrate body 101 is connected to the side of the plurality of sub-connecting segments 1031 away from the substrate body 101, so that, compared with the case where the connecting portion 103 is annular, the frame 200 and the plurality of sub-connecting segments 1031 are connected together, which can further reduce the contact area between the frame 200 and the substrate 100. Therefore, after the frame 200 and the plurality of sub-connecting segments 1031 are welded together, the welding area between the frame 200 and the substrate 100 is further reduced, and the residual stress between the frame 200 and the substrate 100 is further reduced.

[0079] Optionally, as shown in FIGS. 3 and 4, in the direction parallel to the substrate body 101, the connecting portion 103 and the support platform 102 can have a first gap therebetween. That is, the connecting portion 103 distributed around the support platform 102 does not tightly adhere to the support platform 102. In this way, in the direction parallel to the substrate body 101, the middle part of the side of the frame 200 facing the connecting portion 103 can be connected to the connecting portion 103.

[0080] Optionally, referring to FIG. 5, which is a top view of another substrate provided by an embodiment of the present application, the substrate 100 in the laser can include at least two connecting portions 103, each of the connecting portions 103 in the substrate 100 can be distributed around the support platform 102, and the at least two connecting portions 103 can be nested and distributed, and in the direction parallel to the substrate body 101, there can be a second gap between two adjacent connecting portions 103.

[0081] It should be noted that the substrate 100 in the laser can include at least one support platform 102. For example, the substrate 100 can include two support platforms 102, and the side of each of the two support platforms 102 away from the substrate body 101 can be used to fix the light-emitting chip 300. In this way, in the case where the substrate 100 includes two support platforms 102 and at least two connecting portions 103, as shown in FIG. 3, the periphery of one support platform 102 can surround one connecting portion 103, or as shown in FIG. 5, the periphery of one support platform 102 can surround a plurality of connecting portions 103, and the plurality of connecting portions 103 can be nested and distributed around the support platform 102.

[0082] The orthographic projection of at least two connecting portions 103 in the substrate 100 on the substrate body 101 can be located within the orthographic projection of the frame 200 on the substrate body 101. In this way, in the direction perpendicular to the substrate body 101, the side of the frame 200 facing the substrate body 101 can be connected to the side of one connecting portion 103 distributed around the support platform 102 away from the substrate body 101, or can be connected to the sides of multiple connecting portions 103 distributed around the support platform 102 away from the substrate body 101.

[0083] In the present application, the ratio between the area of the connecting region between the connecting portion 103 and the frame 200 and the area of the side of the frame 200 facing the connecting portion 103 can range from one-eighth to one-fourth, so that while ensuring that the fixed connection between the frame 200 and the substrate 100 through the connecting portion 103 is relatively stable, the contact area between the frame 200 and the substrate 100 can also be relatively small.

[0084] It should be noted that, in order to ensure that the ratio between the area of the connecting region between the connecting portion 103 and the frame 200 and the area of the side of the frame 200 facing the connecting portion 103 is between one-eighth and one-fourth, the ratio between the width D1 of the region where the connecting portion 103 contacts the frame 200 and the width D2 of the frame 200 in the direction parallel to the substrate body 101 and perpendicular to the extension direction of the connecting portion 103 can range from one-eighth to one-fourth. For example, the width D2 of the frame 200 in the direction parallel to the substrate body 101 and perpendicular to the extension direction of the connecting portion 103 can be 8 mm, and the width D1 of the region where the connecting portion 103 contacts the frame 200, i.e. the width of the connecting portion 103, can range from 1 mm to 2 mm.

[0085] It should also be noted that, in the case where the side of the frame 200 facing the substrate body 101 is connected to the side of one connecting portion 103 distributed around the support platform 102 away from the substrate body 101, the ratio between the area of the side of the connecting portion 103 facing the frame 200 and the area of the side of the frame 200 facing the connecting portion 103 can range from one-eighth to one-fourth. In the case where the side of the frame 200 facing the substrate body 101 is connected to the sides of multiple connecting portions 103 distributed around the support platform 102 away from the substrate body 101, the ratio between the sum of the areas of the sides of the multiple connecting portions 103 facing the frame 200 and the area of the side of the frame 200 facing the connecting portion 103 can range from one-eighth to one-fourth.

[0086] In the second implementation, referring to FIG. 6 and FIG. 7, FIG. 6 is another exploded view of a laser provided by an embodiment of the present application, and FIG. 7 is a sectional view of another laser provided by an embodiment of the present application. The side of the connecting portion 103 in the substrate 100 facing the support platform 102 can be connected with the side of the frame 200 facing away from the support platform 102. Here, the frame 200 is distributed around the support platform 102. In the direction parallel to the side of the substrate body 101 on which the support platform 102 is distributed, the connecting portion 103 can be distributed on the periphery of the support platform 102, and the frame 200 can be located between the connecting portion 103 and the support platform 102. In this way, the side of the connecting portion 103 facing the support platform 102 can be connected with the side of the frame 200 facing away from the support platform 102.

[0087] Optionally, the substrate 100 can include two connecting portions 103, and the two connecting portions 103 can be distributed on the two sides of the frame 200 arranged oppositely. In this way, in the direction parallel to the side of the substrate body 101 on which the support platform 102 is distributed, the two sides of the frame 200 arranged oppositely can be connected with the connecting portions 103 in the substrate 100 together, so that the connection between the frame 200 and the substrate 100 is more firm.

[0088] Optionally, as shown in FIG. 7, the side of the substrate body 101 in the substrate 100 on which the support platform 102 is distributed can have two avoiding grooves K, and the two avoiding grooves K can correspond to the two connecting portions 103 one by one. In the direction parallel to the substrate body 101 and perpendicular to the extension direction of the connecting portion 103, each connecting portion 103 can extend into the corresponding avoiding groove K, and the width D3 of each connecting portion 103 can be less than the width D4 of the corresponding avoiding groove K.

[0089] It should be noted that, as shown in FIG. 6 and FIG. 7, in the second optional implementation, the ratio between the area of the connection region between the connecting portion 103 and the frame 200 and the area of the side of the frame 200 facing the connecting portion 103 can range from one-eighth to one-fourth.

[0090] It should be noted that, as shown in FIG. 8, FIG. 8 is a structural schematic view of a substrate provided by an embodiment of the present application. In the present application, the substrate body 101 in the substrate 100 can have a sunken groove U, which can penetrate the portions of the two sides of the substrate body 101 arranged oppositely in the direction parallel to the substrate body 101, and the side of the substrate body 101 on which the support platform 102 is distributed can be sunken so that the support platform 102 can be located in the sunken groove U. That is, the sunken groove U can have a bottom surface P1 and two oppositely arranged side surfaces P2. The support platform 102 in the substrate 100 can be located on the bottom surface P1 of the sunken groove U.

[0091] In the first implementation, as shown in FIG. 8, the connecting part 103 in the substrate 100 can be located in the sunken groove U and can be distributed around the support platform 102 on the bottom surface P1. In the direction perpendicular to the bottom surface P1 of the sunken groove U, the side of the connecting part 103 in the substrate 100 away from the substrate body 101 can be connected to the side of the frame 200 facing the substrate body 101.

[0092] In the second implementation, as shown in FIG. 9, which is a structural schematic diagram of another substrate provided by the embodiment of the present application, the side of the frame 200 away from the support platform 102 can be directly connected to the side surface P2 of the sunken groove U. Alternatively, the connecting part 103 in the substrate 100 can be fixed on the side surface P2 of the sunken groove U and extend into the sunken groove U in the direction parallel to the bottom surface P1 of the sunken groove U, so that the side of the connecting part 103 facing the support platform 102 can be connected to the side of the frame 200 away from the support platform 102.

[0093] It should be noted that, in the second implementation, as shown in FIG. 9, the two avoiding grooves K of the substrate body 101 can be respectively distributed on the two oppositely arranged side surfaces P2 of the sunken groove U, and in the direction perpendicular to the bottom surface P1 of the sunken groove U, the avoiding grooves K can be away from the frame 200 relative to the sunken groove U. That is, in the direction perpendicular to the bottom surface P1 of the sunken groove U, after the side of the frame 200 facing the substrate body 100 contacts the bottom surface P1 of the sunken groove U, part of the frame 200 can be suspended on the side of the avoiding groove K facing the frame 200. And in the direction parallel to the bottom surface P1 of the sunken groove U, part of the avoiding groove K can penetrate the side surface P2 of the sunken groove K, so that the connecting part 103 connected to the side surface of the sunken groove U can extend into the corresponding avoiding groove K.

[0094] In the present application, please refer to FIG. 10 and FIG. 11, FIG. 10 is an exploded view of another laser provided by the embodiment of the present application, and FIG. 11 is a sectional view of another laser provided by the embodiment of the present application. The frame 200 in the laser can have a light-transmitting through hole V, and part of the support platform 102 can be located in the light-transmitting through hole V, and the inner wall of the light-transmitting through hole V can contact the outer side surface of the support platform 102. In this way, the light-emitting chip 300 fixed on the side of the support platform 102 away from the substrate body 101 can be sealed in the light-transmitting through hole V of the frame 200.

[0095] Here, in the present application, as shown in FIG. 10, the laser can further include a light-transmissive sealing cover plate 400, which can be located on the side of the frame 200 facing away from the substrate 100, and which can cover the light-transmissive through hole V. For this purpose, the light-emitting chip 300 fixed on the side of the support platform 102 facing away from the substrate body 101 can be sealed within the light-transmissive through hole V by the support platform 102, the frame 200 and the light-transmissive sealing cover plate 400. And the laser emitted by the light-emitting chip 400 can pass through the light-transmissive through hole V and then pass through the light-transmissive sealing cover plate 400 to the outside of the laser, so that the laser emits laser.

[0096] In the present application, the substrate 100 can include two support platforms 102, and the frame 200 can have two light-transmissive through holes V corresponding to the two support platforms 102. Part of each support platform 102 can be located within the corresponding light-transmissive through hole V, and the inner wall of each light-transmissive through hole V can be in contact with the outer side of the corresponding support platform 102. Here, the light-transmissive sealing cover plate 400 located on the side of the frame 200 facing away from the substrate 100 can simultaneously cover the two light-transmissive through holes V to seal the light-emitting chips 300 located on the two support platforms 102.

[0097] Optionally, in the first implementation, as shown in FIG. 11, in the direction perpendicular to the substrate body 101, the height H1 of the connecting portion 103 can be less than or equal to the height H2 of the support platform 102. Here, in the case where the height H1 of the connecting portion 103 is less than the height H2 of the support platform 102, after the side of the connecting portion 103 facing away from the substrate body 101 is connected with the side of the frame 200 facing toward the substrate body 101, part of the support platform 102 can be located within the light-transmissive through hole V of the frame 200, and the light-emitting chip fixed on the side of the support platform 102 facing away from the substrate body 101 can be sealed within the light-transmissive through hole. In the case where the height H1 of the connecting portion 103 is equal to the height H2 of the support platform 102, after the side of the connecting portion 103 facing away from the substrate body 101 is connected with the side of the frame 200 facing toward the substrate body 101, the entire support platform 102 is surrounded by the connecting portion 103.

[0098] It should be noted that, in the case where the connecting portion 103 is annular, after the side of the connecting portion 103 facing away from the substrate body 101 is welded with the side of the frame 200 facing toward the substrate body 101, the light-emitting chip 300 fixed on the support platform 102 surrounded by the annular connecting portion 103 can be sealed by the connecting portion 103 and the frame 200. In this way, no matter in the case where the height H1 of the connecting portion 103 is less than the height H2 of the support platform 102, or in the case where the height H1 of the connecting portion 103 is equal to the height H2 of the support platform 102, the light-emitting chip 300 fixed on the side of the support platform 102 facing away from the substrate body 101 can be sealed.

[0099] In the case that the connecting part 103 comprises a plurality of sub connecting parts 1031 and there is a partition groove between any two adjacent sub connecting parts 1031, the height H1 of the connecting part 103 needs to be less than the height H2 of the support platform 102 in the direction perpendicular to the substrate body 101, so as to ensure that the light emitting chip 300 fixed on the support platform 102 can be sealed by the outer side surface of the support platform 102 and the inner wall of the light transmission through hole V after the side of the connecting part 103 away from the substrate body 101 is connected with the side of the frame 200 facing the substrate body 101.

[0100] It should be noted that in the second implementation, the side of the frame 200 facing the substrate body 101 can be in contact with the surface of the substrate body 101 on which the support platform 102 is distributed in the direction perpendicular to the surface of the substrate body 101 on which the support platform 102 is distributed, so that the support platform 102 can be entirely located in the light transmission through hole V of the frame 200, and the inner wall of the light transmission through hole V can be in contact with the outer side surface of the support platform 102, so that the light emitting chip 300 fixed on the side of the support platform 102 away from the substrate body 101 can be sealed in the light transmission through hole V.

[0101] In the present application, the material of the substrate 100 can include a plurality of kinds, and the present application will be described by taking the following two possible cases as examples:

[0102] In the first case, the substrate body 101 in the substrate 100 can comprise a circuit board, and the support platform 102 in the substrate 100 can have a conductive part, which can be electrically connected with the circuit in the circuit board and the light emitting chip 300, respectively. Here, the circuit in the circuit board can be electrically connected with an external power supply, so that the electrical connection between the light emitting chip 300 and the external power supply can be realized through the conductive part in the support platform 102 and the circuit board. In this way, the external power supply can provide current to the light emitting chip 300 to excite the light emitting chip 300 to emit laser.

[0103] In the second case, the substrate body 101, the support platform 102 and the connecting part 103 in the substrate 100 can be integrally formed by using oxygen-free copper material. Here, oxygen-free copper is a good heat dissipation material, so that after the light emitting chip 300 is fixed on the side of the support platform 102 away from the substrate body 101, the heat generated by the light emitting chip 300 during the process of emitting laser can be dissipated by the substrate 100 made of oxygen-free copper, thereby ensuring the heat dissipation effect of the laser.

[0104] In the prior art, the substrate body in the substrate is made of Kovar alloy, the support platform in the substrate is made of oxygen-free copper, and the substrate body and the support platform are respectively manufactured and then welded together.

[0105] Under the same heat dissipation condition, in the example, when the heat flux density is 4.747x10 6 W / m 2 , the heat transfer coefficient of the side of the substrate away from the light emitting chip is 5000W / m 2 , and the heat transfer coefficient of the side of the support platform fixed with the light emitting chip is 10W / m 2 , in the prior art, the temperature of the side of the support platform fixed with the light emitting chip can reach 125.6°, and the temperature of the side of the substrate away from the light emitting chip can reach 118.7°. In the present application, the temperature of the side of the support platform 102 of the substrate fixed with the light emitting chip can be 59.7°, and the temperature of the side of the substrate body 101 away from the support platform 102 can be 118.7°.

[0106] Therefore, the substrate 100 in the present application is made of oxygen-free copper, which can ensure that the heat emitted by the light emitting chip 300 can be more conducted to the outside through the substrate 100 during the process of emitting laser by the light emitting chip 300, so as to ensure that the laser has good heat dissipation effect.

[0107] In the present application, the material of the frame 200 in the laser can include ceramic material, for example, the material of the frame 200 can be alumina or aluminum nitride. It should be noted that the thermal expansion coefficient of the ceramic material and the thermal expansion coefficient of the oxygen-free copper material are quite different, for example, the thermal expansion coefficient of the aluminum nitride material is 4.8x10 -6 1 / K, and the thermal expansion coefficient of the oxygen-free copper is 16.5x10 -6 1 / K. If the oxygen-free copper substrate and the ceramic frame are directly welded together by welding, there will be a large welding stress, i.e. residual stress, between the oxygen-free copper substrate and the ceramic frame after welding, which leads to low reliability of the connection between the substrate and the frame.

[0108] Therefore, in the present application, the connecting part 103 is arranged on the substrate 100, and the frame 200 can be welded with the connecting part 103 to realize the fixed connection of the frame 200 and the substrate 100. Since the area of the region where the connecting part 103 contacts with the frame 200 is smaller than the area of the side of the frame 200 facing the connecting part 103 in the direction perpendicular to the extension direction of the connecting part 103, the welding surface between the connecting part 103 and the frame 200 is small, and thus the residual stress between the frame 200 and the substrate 100 is small after the connecting part 103 and the frame 200 are welded together, which improves the reliability of the connection between the frame 200 and the substrate 100.

[0109] As shown in FIG. 12, FIG. 12 is a comparison chart of prior art and the present application, in which the horizontal axis represents the distance from the center of the weld, and the vertical axis represents the residual stress. As can be seen from FIG. 11, compared with the welding of the oxygen-free copper substrate and the ceramic frame in the prior art, the residual stress between the frame 200 and the substrate 100 at the weld is significantly smaller after the frame 200 and the connecting portion 103 are welded together in the present application, and therefore the reliability of the connection between the frame 200 and the substrate 100 is higher.

[0110] It should be noted that in the second case, referring to FIG. 13, FIG. 13 is a structural schematic diagram of a laser provided by an embodiment of the present application, the laser can further include a conductive pin 501, the part of the conductive pin 501 in the laser located within the area enclosed by the frame 200 can be used for electrical connection with the light-emitting chip 300, and the part of the conductive pin 501 located outside the area enclosed by the frame 200 can be used for electrical connection with an external circuit. In this way, the electrical connection between the light-emitting chip 300 and an external power supply can be achieved through the conductive pin 501, and thus the external power supply can provide current to the light-emitting chip 300 to excite the light-emitting chip 300 to emit laser.

[0111] In the second case, referring to FIG. 14 and FIG. 15, FIG. 14 is a top view of a laser provided by an embodiment of the present application, and FIG. 15 is a top view of a light-transmitting through hole of a frame provided by an embodiment of the present application, the laser can further include a plurality of light-emitting chips 300, a plurality of conductive pins 501, a plurality of conductive portions 502, and a plurality of wires 503. The plurality of light-emitting chips 300 in the laser can be arranged in an array on the side of the support table 102 away from the substrate body 101, for example, the plurality of light-emitting chips 300 can be arranged in multiple columns. The plurality of conductive pins 501 in the laser can be fixedly connected with the two side walls oppositely arranged in the frame 200, the plurality of conductive portions 502 in the laser can be fixed on the frame 200, and the plurality of conductive portions 502 can correspond to the plurality of conductive pins 501 one by one, each conductive pin 501 can be fixedly connected with the corresponding conductive portion 502. The light-emitting chip 300 can be electrically connected with the conductive portion 502 through the wire 503.

[0112] Here, the plurality of light emitting chips 300 in the laser can include a light emitting chip 301 for emitting red laser light, a light emitting chip 302 for emitting blue laser light, and a light emitting chip 303 for emitting green laser light. The plurality of light emitting chips 300 for emitting laser light of the same color can be arranged in a row, and can be connected in series by the wire 503, and the two light emitting chips at the two ends of the plurality of light emitting chips connected in series can be electrically connected to the two conductive portions 502, respectively. And the two conductive pins 501 electrically connected to the two conductive portions 502 can be connected to the positive and negative poles of the external power supply, respectively, and then the external power supply can provide current to the light emitting chips through the conductive pins 501 and the conductive portions 502, and then excite the above-mentioned light emitting chips connected in series to emit laser light.

[0113] In the present application, according to different arrangement modes of the light emitting chips 300 for emitting laser light of different colors on the support table 102, the number of conductive pins 501 in the laser can have different cases.

[0114] In one possible case, as shown in FIG. 14, one of the two support tables 102 of the substrate 100 can be fixed with four light emitting chips 301 for emitting red laser light away from one side of the substrate body 101, and the four light emitting chips 301 for emitting red laser light can be arranged in a row. The other support table 102 can be fixed with three light emitting chips 302 for emitting green laser light and two light emitting chips 303 for emitting blue laser light away from one side of the substrate body 101, and the three light emitting chips 302 for emitting green laser light and the two light emitting chips 303 for emitting blue laser light can be arranged in a row.

[0115] In this way, the four light emitting chips 301 for emitting red laser light can be connected in series by the wire 503, and the two light emitting chips 301 at the two ends of the four light emitting chips 301 can be electrically connected to the two conductive portions 502, respectively, to be electrically connected to the positive and negative poles of the external power supply through the two conductive pins 501, respectively. For this, the part of the frame 200 surrounding the support table 102 fixed with the four light emitting chips 301 for emitting red laser light can be fixed with the two conductive portions 502 and the two conductive pins 501.

[0116] Similarly, three light emitting chips 302 for emitting green laser light can be connected in series by wires 503, and two light emitting chips 302 at both ends of the three light emitting chips 302 can be electrically connected to two conductive portions 502, respectively, to be electrically connected to the positive and negative poles of an external power source through two conductive pins 501, respectively. Two light emitting chips 303 for emitting blue laser light can be connected in series by wires 503, and the two light emitting chips 303 can be electrically connected to two conductive portions 502, respectively, to be electrically connected to the positive and negative poles of an external power source through two conductive pins 501, respectively. For this, the portion of the frame 200 surrounding the support table 102 on which the three light emitting chips 302 and the two light emitting chips 303 are fixed can be fixed with four conductive portions 502 and four conductive pins 501.

[0117] In another possible case, as shown in FIG. 15, both support tables 102 in the substrate 100 can be fixed with three light emitting chips 301 for emitting red laser light, two light emitting chips 302 for emitting green laser light, and one light emitting chip 303 for emitting blue laser light. And the three light emitting chips 301 for emitting red laser light, the two light emitting chips 302 for emitting green laser light, and the one light emitting chip 303 for emitting blue laser light can be arranged in a column on one support table 102.

[0118] In this way, three light emitting chips 301 for emitting red laser light can be connected in series by wires 503, and two light emitting chips 301 at both ends of the three light emitting chips 301 can be electrically connected to two conductive portions 502, respectively, to be electrically connected to the positive and negative poles of an external power source through two conductive pins 501, respectively. Two light emitting chips 302 for emitting green laser light can be connected in series by wires 503, and the two light emitting chips 302 can be electrically connected to two conductive portions 502, respectively, to be electrically connected to the positive and negative poles of an external power source through two conductive pins 501, respectively. One light emitting chip 302 for emitting green laser light can be electrically connected to two conductive portions 502 to be electrically connected to the positive and negative poles of an external power source through two conductive pins 501, respectively. For this, the portion of the frame 200 surrounding one support table 102 can be fixed with three conductive portions 502 and three conductive pins 501.

[0119] It should be noted that in the arrangement direction of the row of light emitting chips, the plurality of conductive parts 502 can be uniformly distributed on both sides of the row of light emitting chips. The laser can also include a relay platform 504. In the case where the distance between the light emitting chip and the conductive part 502 to which the light emitting chip is to be connected is far, the light emitting chip can first be electrically connected to the relay platform 504 through a wire 503, and the relay platform 504 can be electrically connected to the conductive part 502 through another wire 503, thereby realizing electrical connection between the light emitting chip and the corresponding conductive part 502.

[0120] In summary, the embodiment of the present application provides a laser, which includes a substrate, a frame and a light emitting chip. The substrate can include a connecting part, and the frame can be connected with the connecting part. The area of the connecting region between the connecting part in the substrate and the frame can be smaller than the area of the one surface of the frame facing the connecting part. In this way, in the case where the frame is connected with the connecting part by welding to realize the fixed connection of the frame and the substrate, the area of the welding region between the frame and the connecting part can be smaller than the area of the one surface of the frame facing the connecting part. Therefore, compared with the one surface of the frame in the prior art which is welded with the substrate, the frame in the present application is fixedly connected with the substrate by welding with the connecting part, which reduces the contact area between the frame and the substrate, that is, reduces the welding area between the frame and the substrate, and further reduces the residual stress between the frame and the substrate after the connecting part and the frame are welded together, thereby improving the reliability of the connection between the frame and the substrate.

[0121] With the development of optoelectronic technology, lasers are increasingly widely used, such as being used as light sources in laser display products. As a core component of laser display products, the volume and reliability of the laser directly affect the volume and reliability of the entire laser display product.

[0122] FIG. 16 is a structural schematic diagram of a laser in the related art. As shown in FIG. 16, the packaging structure of the laser 2000 in the related art generally includes a metal substrate 2001 and a ceramic tube shell 2002, and the ceramic tube shell 2002 and the metal substrate 2001 are fixed by welding. Light emitting chips (not shown) are arranged in a concentrated manner in a patch area 2003 surrounded by the ceramic tube shell 2002, so as to package the light emitting chips. In order to dissipate heat, the material of the metal substrate 2001 can use oxygen-free copper. The coefficient of thermal expansion (CTE) of oxygen-free copper is 17, unit: 1E-6 / ℃, while the coefficient of thermal expansion of ceramic is only 4-8. There is a great problem of mismatching of the coefficient of thermal expansion between oxygen-free copper and ceramic. After the ceramic tube shell 2002 and the metal substrate 2001 are brazed, there is a problem of welding stress, and there is a great risk of ceramic cracking, and the larger the size, the more serious the problem. Once the ceramic cracks, it will cause many reliability problems such as air leakage of the laser packaging structure and failure of the light emitting chip, affecting the reliability of the laser.

[0123] In order to improve the connection reliability of the metal substrate 2001 and the ceramic tube shell 2002, two aspects of improvement schemes can be included in the related art. One is that the metal substrate 2001 adopts Kovar material matched with the ceramic, such as Kovar embedded oxygen-free copper, which can improve the welding stress problem. However, the thermal resistance of Kovar material is relatively high, and the heat dissipation performance of the metal substrate 2001 will be greatly reduced, which limits the heat dissipation of the high-power light-emitting chip. The second is to package a certain number of light-emitting chips in different ceramic tube shells 2002, the volume of a single ceramic tube shell 2002 is reduced, the welding area of the ceramic tube shell 2002 and the metal substrate 2001 is reduced, which can alleviate the damage problem of the welding stress. However, the volume of the ceramic tube shell 2002 is reduced, and the number of light-emitting chips that can be accommodated inside is reduced, which limits the increase of the light-emitting power of the laser.

[0124] The diamond copper material is a metal diamond composite material mainly composed of diamond particles and a copper matrix. Diamond is a material with extremely high hardness, high thermal conductivity, high electrical insulation and chemical stability. In the diamond copper material, the diamond particles act as reinforcing bodies to provide the composite material with excellent thermal conductivity, mechanical properties and electrical properties. Copper, the copper matrix, is a metal with excellent thermal conductivity, good ductility and processability. In the diamond copper material, copper acts as a matrix material to provide stable support for the diamond particles and provide the overall electrical conductivity and thermal conductivity of the composite material. The combination of diamond and copper matrix can be mixing diamond particles with copper matrix, and then using powder metallurgy, infiltration method, extrusion casting method or selective laser melting method to combine the two. In this way, the diamond particles can be uniformly distributed in the copper matrix and form a good interface bond.

[0125] Because the thermal conductivity of diamond material is more than twice that of copper, and the thermal expansion coefficient of diamond is about 1 / 10 of that of copper. Therefore, by combining diamond material into copper, the thermal conductivity of diamond copper composite material can be increased, and the thermal expansion coefficient can be reduced at the same time.

[0126] The thermal expansion coefficient and thermal conductivity of the diamond copper composite material are related to the volume fraction of the diamond material. Under the condition that the particle size of the diamond particles is the same, as the volume fraction of the diamond particles increases, the thermal expansion coefficient of the diamond copper composite material becomes smaller, and the thermal conductivity of the diamond copper composite material becomes larger. Increasing the volume fraction of diamond particles in the composite material helps to obtain high-quality diamond copper composite material. According to the needs, different volume fractions of diamond particles can be combined in the copper matrix to obtain diamond copper composite materials with different thermal expansion coefficients and thermal conductivities.

[0127] Taking the particle size of the diamond particles as about 50 microns as an example, the corresponding relationship between the volume fraction, thermal expansion coefficient and thermal conductivity of the diamond particles of the diamond copper composite material is shown in the following table.

[0128] Table 1:

[0129] Through research, the metal-diamond composite material can be used to improve the problem of mismatching of the thermal expansion coefficients of the metal substrate and the ceramic tube shell, improve the problem of welding stress of the metal substrate and the ceramic tube shell, and further improve the connection reliability of the metal substrate and the ceramic tube shell.

[0130] Based on the above considerations, a laser is designed, and metal-diamond material is used at least in the area of the substrate fixedly connected with the tube shell, so as to improve the problem of mismatching of the thermal expansion coefficients of the substrate and the tube shell, improve the problem of welding stress, and further improve the connection reliability of the tube shell and the substrate.

[0131] The laser disclosed in the embodiments of the present application can be used as a light source in a laser display device, a laser projection device, a laser welding device, a laser cutting device, and the like, but is not limited thereto. In the embodiments of the present application, the laser can be, but is not limited to, a visible semiconductor laser.

[0132] FIG. 17 is a perspective structural schematic diagram of a laser according to an embodiment of the present application, FIG. 18 is a cross-sectional schematic diagram of a laser according to an embodiment of the present application, and FIG. 19 is an exploded view of a laser according to an embodiment of the present application.

[0133] As shown in FIGS. 17 to 19, the laser 1000 can include a substrate 100, at least one tube shell 210, a plurality of light emitting chips 300, and at least one light-transmitting sealing cover plate 400. The material of the tube shell 210 is different from that of the substrate 100, and the tube shell 210 has a first end 201 and a second end 202 axially oppositely arranged. The first end 201 is fixedly connected with the substrate 100, and the tube shell 210 and the substrate 100 enclose a containing space 500. The plurality of light emitting chips 300 are located in the containing space 500 and are attached to the surface of the substrate 100, and the light emitting chips 300 are used to emit laser. The light-transmitting sealing cover plate 400 is fixedly connected with the second end 202, and the light-transmitting sealing cover plate 400 is used to seal the containing space 500. The substrate 100 includes a metal body 111 and a diamond layer 112 arranged on the surface of the metal body 111, and the diamond layer 112 is distributed with diamond particles 120. The substrate 100 includes an enclosed area 131 covered by the axial projection of the outer contour of the first end 201 and an external area 132 located outside the enclosed area 131, the enclosed area 131 is provided with the diamond layer 112, and the external area 132 is not provided with the diamond layer 112.

[0134] The substrate 100 has a plate-like structure with two opposite and relatively large plate surfaces in the thickness direction (Z direction in FIGS. 17 and 18), and a plurality of small side surfaces connecting the two plate surfaces. The two plate surfaces can be parallel. The tube shell 210 has a frame-like or tube-like structure with a first end 201 and a second end 202 opposite in the axial direction (Z direction in FIGS. 17-19), and the first end 201 and the second end 202 each have an annular end surface. The tube shell 210 has an inner wall and an outer wall connecting the two end surfaces. The first end 201 of the tube shell 210 is fixedly connected to the substrate 100, and one tube shell 210 and the substrate 100 form a containing space 500. The substrate 100 forms the bottom of the containing space 500, and the tube shell 210 forms the side wall of the containing space 500. The number of tube shells 210 is not limited. The material of the tube shell 210 is different from that of the substrate 100. For example, the material of the tube shell 210 can include ceramic, and the material of the substrate 100 can include oxygen-free copper. The light-transmitting sealing cover plate 400 is fixed to the second end 202 of the tube shell 210 away from the substrate 100, and seals the containing space 500. The substrate 100, the tube shell 210, and the light-transmitting sealing cover plate 400 can form a packaging structure for packaging components in the containing space 500. In this way, the damage of external water and oxygen to the components in the containing space 500 can be reduced, and the use reliability of the laser 1000 can be improved. For example, the material of the light-transmitting sealing cover plate 400 can be BK7 glass, sapphire, or quartz.

[0135] A plurality of light-emitting chips 300 can be arranged in the containing space 500, and the plurality of light-emitting chips 300 can be arranged in a row along the length direction of the containing space 500 (X direction in FIG. 19). In some embodiments, as shown in FIG. 19, the laser 1000 can further include a plurality of mirrors 600 and at least one lens 700. The plurality of mirrors 600 are arranged in the containing space 500 and correspond to the light-emitting chips 300. The mirrors 600 are used to reflect the laser emitted by the light-emitting chips 300. The lens 700 is fixed to the side of the light-transmitting sealing cover plate 400 away from the tube shell 210, and the lens 700 is used to combine the plurality of lasers.

[0136] The light emitting chip 300 is attached to the surface of the substrate 100. Circuitry can be arranged in the substrate 100 and the tube shell 210 for delivering current to the light emitting chip 300. The light emitting chip 300 can emit laser light to the corresponding mirror 600 under the action of the current, and the mirror 600 reflects the laser light to the light-transmitting sealing cover plate 400. The laser light passes through the light-transmitting sealing cover plate 400 and is emitted out of the containing space 500, and the lens 700 outputs the combined laser light. The required laser output power of different products is also different, and the number of light emitting chips 300 attached in the laser 1000 can be adjusted accordingly according to different product requirements. The number of light emitting chips 300 is not limited in the embodiments of the application. For example, for products with relatively large power requirements, the volume of the laser 1000 is also relatively large, and the laser 1000 can include 3 to 5 light emitting chips 300.

[0137] The metal body 111 can be an integrally formed metal plate-shaped structure. The heat dissipation of the substrate 100 is mainly in the thickness direction of the substrate 100, but the substrate 100 also has some effect on heat dissipation in the lateral direction, which refers to the direction parallel to the surface of the substrate 100 on which the light emitting chip 300 is attached. The integrally formed metal body 111 can conduct heat laterally. In this way, heat can quickly spread in the metal body 111, and the heat dissipation performance of the substrate 100 is better.

[0138] The diamond layer 112 can be a metal-diamond composite material layer laminated on the surface of the metal body 111, or the diamond layer 112 can be formed by combining the diamond particles 120 with the surface of the metal body 111, that is, the diamond particles 120 are embedded in the surface of the metal body 111. The specific structure of the diamond layer 112 is not limited. The diamond layer 112 is arranged on the surface of the metal body 111, which can reduce the use amount of the diamond particles 120 and reduce the cost. At the same time, the metal body 111 is not doped with diamond particles 120 inside, which can reduce the thickness of the metal body 111, and further reduce the thickness of the substrate 100.

[0139] The axial projection of the outer contour of the first end 201 refers to the projection of the outer contour of the first end 201 of the tube shell 210 on the surface of the substrate 100 in the axial direction of the tube shell 210 (such as the Z direction in FIGS. 17-18). It can be understood that when the first end 201 of the tube shell 210 is fixedly connected with the substrate 100, the area on the substrate 100 covered by the axial projection of the outer contour of the first end 201 is the enclosed area 131, and the area not covered is the external area 132. It can be understood that the enclosed area 131 of the substrate 100 includes the area for fixing the tube shell 210 and the area for attaching the light emitting chip 300.

[0140] The enclosed area 131 is provided with the diamond layer 112. Since the thermal expansion coefficient of the diamond material is low, by providing the diamond layer 112 on the enclosed area 131, the thermal expansion coefficient of the enclosed area 131 on the substrate 100 can be reduced, which is beneficial to make the area of the substrate 100 on which the tube shell 210 is fixed have good thermal expansion coefficient matching with the tube shell 210, reduce the thermal stress caused by temperature change, improve the stress problem between the tube shell 210 and the substrate 100 due to different materials, and further reduce the connection cracking caused by stress, and improve the connection reliability of the tube shell 210 and the substrate 100. In the embodiment of the present application, the tube shell 210 and the substrate 100 can be fixedly connected by brazing or the like.

[0141] Since the connection reliability of the tube shell 210 and the substrate 100 is improved, the tube shell 210 can be made larger, the contact area of the tube shell 210 and the substrate 100 is increased, the area enclosed by the tube shell 210 can be increased, and more light emitting chips 300 can be arranged in the accommodation space 500. The number of light emitting chips 300 is increased, and the light emitting power of the laser 1000 can be increased. At the same time, since the thermal conductivity of the diamond material is high, by providing the diamond layer 112 on the enclosed area 131, the thermal conductivity of the enclosed area 131 on the substrate 100 can be increased, which is beneficial to make the area of the substrate 100 on which the light emitting chip 300 is mounted have a good heat conduction path, and can improve the heat dissipation problem after the number of light emitting chips 300 is increased. Therefore, the embodiment of the present application can provide a laser 1000 with high light emitting power, high heat dissipation efficiency and high reliability.

[0142] In combination with FIG. 20, FIG. 20 is a light path schematic diagram of a laser 1000 provided by an embodiment of the present application. A plurality of light emitting chips 300 emit laser under the action of current to corresponding mirrors 600, the mirrors 600 reflect the laser to lenses 700, and the lenses 700 output the combined laser to a light guide pipe 800. It can be understood that the row spacing D of the light emitting chips 300 affects the distance and position of the mirrors 600, and thus affects the packaging volume of the laser 1000. Since the thermal conductivity of the area of the substrate 100 on which the light emitting chip 300 is mounted is high, efficient heat dissipation can be achieved. Therefore, the light emitting chips 300 can be densely arranged, the row spacing D of the light emitting chips 300 can be small, the packaging volume is reduced, and thus the volume of the tube shell 210 is reduced, which is beneficial to the light combination of the rear-end optical path of the laser 1000 and the miniaturization of the laser 1000. For example, the row spacing D of the light emitting chips 300 can be between 1 millimeter and 3 millimeters.

[0143] The external region 132 is not provided with the diamond layer 112. In this way, the use amount of the diamond particles 120 can be reduced, and the cost can be reduced. In some embodiments, the external region 132 of the substrate 100 can be provided with a connecting structure. The connecting structure can be used to connect other components of the laser 1000. For example, the other components can include a circuit board. When the external region 132 is not provided with the diamond layer 112, the influence of the diamond layer 112 on the connecting structure can be reduced, and the connection reliability of the substrate 100 and the other components can be improved. For example, the connecting structure can include a connecting hole 140.

[0144] The laser 1000 according to the embodiments of the present application can improve the matching of the coefficients of thermal expansion of the substrate 100 and the tube shell 210, improve the stress problem of the connection between the tube shell 210 and the substrate 100, and improve the connection reliability of the tube shell 210 and the substrate 100 by providing the diamond layer 112 in the enclosed region 131 of the substrate 100. At the same time, the thermal conductivity of the arrangement region of the light-emitting chip 300 on the substrate 100 can be improved, the heat dissipation problem of the light-emitting chip 300 can be improved, and the use reliability of the laser 1000 can be improved. By providing the diamond layer 112 on the surface of the metal body 111 and not providing the diamond layer 112 in the external region 132 of the substrate 100, the use amount of the diamond particles 120 can be reduced, and the cost can be reduced.

[0145] In some embodiments, as shown in FIG. 18, the enclosed region 131 includes a first region 1311 for fixing the tube shell 210 and a second region 1312 for mounting the light-emitting chip 300. The diamond layer 112 in the first region 1311 is provided with a first volume fraction of diamond particles 120. The diamond layer 112 in the second region 1312 is provided with a second volume fraction of diamond particles 120, and the second volume fraction is greater than the first volume fraction.

[0146] The coefficient of thermal expansion and the thermal conductivity of the metal-diamond composite material are related to the volume fraction of the diamond particles 120. In the case that the particle size of the diamond particles 120 is the same, the higher the volume fraction of the diamond particles 120 in the diamond layer 112, the higher the thermal conductivity and the smaller the coefficient of thermal expansion. By using the adjustable characteristics of the coefficient of thermal expansion and the thermal conductivity of the metal-diamond composite material, the diamond layer 112 can be arranged in different regions, that is, the position and the volume fraction of the distribution of the diamond particles 120 on the metal body 111 can be customized according to requirements. In this way, the coefficient of thermal expansion and the thermal conductivity of different regions on the substrate 100 can be adjusted, and the coefficient of thermal expansion and the thermal conductivity of different regions on the substrate 100 can be flexibly customized.

[0147] The substrate 100 is fixedly connected with the end surface of the first end 201 of the tube shell 210 through the diamond layer 112 of the first region 1311, and the tube shell 210 is located on the side of the diamond layer 112 away from the metal body 111. By setting the volume fraction of the diamond particles 120 in the diamond layer 112 of the first region 1311 as a first volume fraction, the thermal expansion coefficient of the first region 1311 on the substrate 100 can be set as a set value, and the set value can be preset according to the thermal expansion coefficient of the tube shell 210. For example, the material of the tube shell 210 can include ceramic, and the thermal expansion coefficient of the ceramic is 4-8. At this time, the first volume fraction of the diamond particles 120 in the diamond layer 112 of the first region 1311 can be adjusted to be within the range of 60% to 75%, so that the thermal expansion coefficient of the first region 1311 on the substrate 100 is within the range of 4-7. In this way, the difference between the thermal expansion coefficient of the first region 1311 on the substrate 100 and the thermal expansion coefficient of the tube shell 210 can be reduced, and the first region 1311 on the substrate 100 for fixing the tube shell 210 has better thermal expansion coefficient matching with the tube shell 210, which can further improve the stress problem of the connection between the tube shell 210 and the substrate 100, and then improve the connection reliability of the tube shell 210 and the substrate 100.

[0148] The substrate 100 is fixedly connected with the end surface of the first end 201 of the tube shell 210 through the diamond layer 112 of the first region 1311, and the tube shell 210 is located on the side of the diamond layer 112 away from the metal body 111. By setting the volume fraction of the diamond particles 120 in the diamond layer 112 of the first region 1311 as a first volume fraction, the thermal expansion coefficient of the first region 1311 on the substrate 100 can be set as a set value, and the set value can be preset according to the thermal expansion coefficient of the tube shell 210. For example, the material of the tube shell 210 can include ceramic, and the thermal expansion coefficient of the ceramic is 4-8. At this time, the first volume fraction of the diamond particles 120 in the diamond layer 112 of the first region 1311 can be adjusted to be within the range of 60% to 75%, so that the thermal expansion coefficient of the first region 1311 on the substrate 100 is within the range of 4-7. In this way, the difference between the thermal expansion coefficient of the first region 1311 on the substrate 100 and the thermal expansion coefficient of the tube shell 210 can be reduced, and the first region 1311 on the substrate 100 for fixing the tube shell 210 has better thermal expansion coefficient matching with the tube shell 210, which can further improve the stress problem of the connection between the tube shell 210 and the substrate 100, and then improve the connection reliability of the tube shell 210 and the substrate 100.

[0149] In this way, the high light emitting power, high reliability, high heat dissipation efficiency and miniaturization of the laser 1000 can be realized.

[0150] In some embodiments, the absolute value of the difference between the coefficient of thermal expansion of the first region 1311 of the substrate 100 and the coefficient of thermal expansion of the tube shell 210 is less than or equal to 1E-6 / °C.

[0151] That is, the difference between the coefficient of thermal expansion of the first region 1311 on the substrate 100 and the coefficient of thermal expansion of the tube shell 210 is less than or equal to 1. In this way, the coefficient of thermal expansion of the first region 1311 on the substrate 100 for fixing the tube shell 210 can be matched with the coefficient of thermal expansion of the tube shell 210, reducing thermal stress due to temperature changes, reducing connection cracking, and improving the connection reliability of the tube shell 210 and the substrate 100.

[0152] In some embodiments, the thermal conductivity of the second region 1312 of the substrate 100 is at least twice the thermal conductivity of the metal body 111.

[0153] For example, the material of the metal body 111 can include oxygen-free copper, and the thermal conductivity of oxygen-free copper is about 400 W / mK. At this time, the second volume fraction of the diamond particles 120 of the second region 1312 can be adjusted to increase the thermal conductivity of the second region 1312 of the substrate 100 to 1000 W / mK (more than twice the thermal conductivity of oxygen-free copper). In some embodiments, the thermal conductivity of the second region 1312 of the substrate 100 can be less than or equal to four times the thermal conductivity of the metal body 111, for example, to increase the thermal conductivity of the second region 1312 of the substrate 100 to 1600 W / mK.

[0154] In this way, the second region 1312 of the substrate 100 on which the light-emitting chip 300 is mounted can have a better heat conduction path, achieving efficient and rapid heat dissipation, and further improving the heat dissipation problem after the increase of the number of light-emitting chips 300 and the increase of the light-emitting power. Due to the improvement of the heat dissipation performance, the risk of damage of the light-emitting chip 300 due to excessive temperature can be reduced, and the use reliability of the laser 1000 can be improved. Due to the efficient heat dissipation, the light-emitting chip 300 can be arranged more densely, and the packaging volume can be reduced, which is beneficial to the miniaturization of the laser 1000. Thus, the embodiments of the present application can provide a laser 1000 with high light-emitting power, efficient heat dissipation, high reliability, and miniaturization.

[0155] In some embodiments, the first volume fraction can be greater than or equal to 60% and less than or equal to 70%.

[0156] The first volume fraction of the diamond particles 120 on the first region 1311 of the substrate 100 is greater than or equal to 60%, which can reduce the coefficient of thermal expansion of the first region 1311 of the substrate 100. For example, when the material of the metal body 111 includes oxygen-free copper, the first volume fraction is in a range of 60% to 65%, and the coefficient of thermal expansion of the first region 1311 of the substrate 100 can be 6-7. The first volume fraction of the diamond particles 120 on the first region 1311 of the substrate 100 is less than or equal to 70%, which can limit the lower limit of the coefficient of thermal expansion of the first region 1311 of the substrate 100. For example, when the material of the metal body 111 includes oxygen-free copper, the first volume fraction is in a range of 65% to 70%, the coefficient of thermal expansion of the first region 1311 of the substrate 100 can be 5-6, and the lower limit of the coefficient of thermal expansion can be 5. At this time, the difference between the coefficient of thermal expansion of the first region 1311 of the substrate 100 and the coefficient of thermal expansion of the tube shell 210 is small, which can improve the stress problem of the connection between the tube shell 210 and the substrate 100 and improve the connection reliability of the tube shell 210 and the substrate 100. Since the upper limit of the first volume fraction is limited, the use amount of the diamond particles 120 can be reduced, and the cost can be reduced.

[0157] By setting the first volume fraction to be greater than or equal to 60% and less than or equal to 70%, the difference between the coefficient of thermal expansion of the first region 1311 of the substrate 100 and the coefficient of thermal expansion of the tube shell 210 can be reduced, which can make the region of the substrate 100 on which the tube shell 210 is fixed have good matching with the coefficient of thermal expansion of the tube shell 210, reduce the thermal stress caused by temperature changes, and improve the connection reliability of the tube shell 210 and the substrate 100. At the same time, the use amount of the diamond particles 120 can be reduced, and the cost can be reduced.

[0158] In some embodiments, the second volume fraction can be greater than or equal to 60% and less than or equal to 75%.

[0159] The second volume fraction of the diamond particles 120 on the second region 1312 of the substrate 100 is greater than or equal to 60%, which can increase the thermal conductivity of the second region 1312 of the substrate 100. For example, when the material of the metal body 111 includes oxygen-free copper, the second volume fraction is in a range of 60% to 70%, which can make the thermal conductivity of the second region 1312 of the substrate 100 be 550-650. The second volume fraction of the diamond particles 120 on the second region 1312 of the substrate 100 is less than or equal to 75%, which can limit the upper limit of the thermal conductivity of the second region 1312 of the substrate 100. For example, when the material of the metal body 111 includes oxygen-free copper, the second volume fraction is in a range of 70% to 75%, which can make the thermal conductivity of the second region 1312 of the substrate 100 be 650-800, and the upper limit of the thermal conductivity can be 800. At this time, the second region 1312 of the substrate 100 has a higher thermal conductivity, which can improve the heat dissipation problem of the light-emitting chip 300. Since the upper limit of the second volume fraction is limited, the use amount of the diamond particles 120 can be reduced, and the cost can be reduced.

[0160] By setting the second volume fraction to be greater than or equal to 60% and less than or equal to 75%, the thermal conductivity of the second region 1312 of the substrate 100 can be improved, the heat dissipation problem of the light-emitting chip 300 can be improved, the risk of damage of the light-emitting chip 300 due to excessive temperature can be reduced, and the use reliability of the laser 1000 can be improved. At the same time, the use amount of the diamond particles 120 can be reduced, and the cost can be reduced.

[0161] In some embodiments, the particle size of the diamond particles 120 can be in a range of 50 microns to 300 microns.

[0162] The thermal conductivity of the metal-diamond composite material is limited by the interface design and preparation process of the composite material, specifically, the intrinsic thermal conductivity of the metal body 111 and the diamond particles 120, the volume fraction of the diamond particles 120, and the particle size. The diamond particles 120 with a particle size of 50 microns to 300 microns are selected as the reinforcing phase in the metal-diamond composite material, which is beneficial to reduce the conversion of the surface of the diamond particles 120 into a graphite-like phase, improve the interface bonding between the diamond particles 120 and the metal body 111, improve the thermal conductivity of the substrate 100, and improve the heat dissipation performance.

[0163] In some embodiments, as shown in FIG. 18, the thickness of the diamond layer 112 of the first region 1311 is greater than or equal to the particle size of the diamond particles 120, and less than twice the particle size of the diamond particles 120. The thickness of the diamond layer 112 of the second region 1312 is greater than the thickness of the diamond layer 112 of the first region 1311.

[0164] Since the thickness of the diamond layer 112 of the first region 1311 is less than twice the particle size of the diamond particles 120, there are no two diamond particles 120 in the diamond layer 112 of the first region 1311 that completely overlap in the thickness direction (e.g., the Z direction in FIG. 18), and the diamond particles 120 in the diamond layer 112 of the first region 1311 are distributed in a single layer. Since the diamond particles 120 have a low coefficient of thermal expansion, arranging the diamond particles 120 in a single layer on the substrate 100 in the first region 1311 can match the coefficient of thermal expansion of the substrate 100 in the first region 1311 with the coefficient of thermal expansion of the tube shell 210, improving the connection reliability of the tube shell 210 and the substrate 100. Since the diamond particles 120 are distributed in a single layer in the diamond layer 112, the amount of diamond particles 120 used can be reduced, and the cost can be reduced. Since the diamond particles 120 are distributed in a single layer, the thickness of the diamond layer 112 is small, which can reduce the thickness of the substrate 100 and facilitate miniaturization of the laser 1000.

[0165] Since the thickness of the diamond layer 112 of the second region 1312 is greater than the thickness of the diamond layer 112 of the first region 1311, more diamond particles 120 can be arranged in the thickness direction in the diamond layer 112 of the second region 1312. The number of diamond particles 120 arranged in the thickness direction in the diamond layer 112, i.e., the number of layers in which the diamond particles 120 are distributed, can be determined according to the thermal conductivity requirements. The diamond particles 120 in the diamond layer 112 of the second region 1312 can be distributed in two or more layers. Since the diamond layer 112 of the second region 1312 is thicker and has more diamond particles 120, the second region 1312 of the substrate 100 can have a higher thermal conductivity. The second region 1312 of the substrate 100 for mounting the light-emitting chips 300 has a higher thermal conductivity, which can improve the heat dissipation problem after the number of light-emitting chips 300 and the power are increased, and can increase the light-emitting power of the laser 1000. Since the heat dissipation problem is improved, the risk of damage to the light-emitting chips 300 due to excessive temperature can be reduced, and the use reliability of the laser 1000 can be improved.

[0166] In this way, it is beneficial to achieve high light-emitting power, high reliability, high-efficiency heat dissipation, miniaturization, and low cost of the laser 1000.

[0167] In some embodiments, as shown in FIGS. 17 and 18, the number of tube shells 210 is two, and the two tube shells 210 and the substrate 100 enclose two accommodation spaces 500, at least one light-emitting chip 300 is located in one of the accommodation spaces 500 and is used to emit first-color laser light, and a plurality of light-emitting chips 300 are located in the other of the accommodation spaces 500 and are used to emit second-color and third-color laser light.

[0168] The laser of the first color can be a red laser, and the lasers of the second and third colors can be green and blue lasers, respectively.

[0169] Thus, the embodiment of the present application can provide a laser 1000 including a double tube shell 210 and a three-color light emitting chip 300.

[0170] FIG. 21 is a perspective structural schematic view of a tube shell 210 and a substrate 100 according to an embodiment of the present application, FIG. 22 is a top view of the tube shell 210 and the substrate 100 according to an embodiment of the present application, FIG. 23 is a sectional schematic view of another laser 1000 according to an embodiment of the present application, and FIG. 24 is a perspective structural schematic view of the laser 1000 according to an embodiment of the present application.

[0171] In some embodiments, as shown in FIGS. 21-24, the number of the tube shells 210 is one, and the plurality of light emitting chips 300 are located in one accommodating space 500.

[0172] As shown in FIG. 24, the plurality of light emitting chips 300 can be arranged in an array of multiple rows and multiple columns in the accommodating space 500. Since the connection reliability of the tube shell 210 and the substrate 100 is improved, the tube shell 210 can be made larger, the area enclosed by the tube shell 210 is increased, more light emitting chips 300 can be arranged in the accommodating space 500, and one tube shell 210 can be used to package the plurality of light emitting chips 300 of the laser 1000. Since one tube shell 210 is used for packaging, the packaging process can be simplified, and the production efficiency is improved. Since one tube shell 210 is used to package the same number of light emitting chips 300, the middle side walls of the plurality of tube shells 210 can be omitted, the structure is compact, the volume of the laser 1000 can be reduced, and the miniaturization of the laser 1000 is facilitated.

[0173] Thus, the embodiment of the present application can provide a laser 1000 with a simplified packaging process and miniaturization.

[0174] In some embodiments, the material of the metal body 111 can include oxygen-free copper. The oxygen-free copper has better thermal conductivity, and the thermal conductivity can meet the heat dissipation requirements of the high-power light emitting chip 300. The heat can be rapidly diffused in the metal body 111. Meanwhile, the high thermal conductivity of the diamond particles 120 is utilized, which is conducive to achieving efficient heat dissipation of the second region 1312, improving the heat dissipation performance of the substrate 100, and improving the use reliability of the laser 1000.

[0175] In some embodiments, the material of the tube shell 210 can include ceramic, such as aluminum oxide or aluminum nitride, etc.

[0176] FIG. 25 is a cross-sectional view of another laser 1000 according to embodiments of the present application. As shown in FIG. 25, the laser 1000 according to embodiments of the present application includes a substrate 100, at least one tube shell 210, a plurality of light emitting chips 300, and at least one light-transmissive sealing cover plate 400. The tube shell 210 is made of a material different from that of the substrate 100. The tube shell 210 has a first end 201 and a second end 202 axially oppositely arranged, the first end 201 is fixedly connected with the substrate 100, and the tube shell 210 and the substrate 100 enclose a receiving space 500. The plurality of light emitting chips 300 are located in the receiving space 500 and are attached to the surface of the substrate 100, and the light emitting chips 300 are configured to emit laser light. The light-transmissive sealing cover plate 400 is fixedly connected with the second end 202, and the light-transmissive sealing cover plate 400 is configured to seal the receiving space 500. The substrate 100 includes an enclosed area 131 covered by the axial projection of the outer contour of the first end 201 and an external area 132 outside the enclosed area 131. The substrate 100 includes a metal body 111 and diamond particles 120 doped in the metal body 111 of the enclosed area 131, and the metal body 111 of the external area 132 is not doped with the diamond particles 120.

[0177] The diamond particles 120 are doped in the metal body 111 of the enclosed area 131, so that the substrate 100 forms a metal-diamond composite material in the enclosed area 131. The diamond particles 120 and the metal body 111 can be mixed and then combined together by a powder metallurgy method, an infiltration method, an extrusion casting method, or a selective laser melting method. The combination of the diamond particles 120 and the metal body 111 is not limited herein.

[0178] Since the diamond particles 120 are doped in the metal body 111 of the enclosed area 131, the diamond particles 120 and the metal body 111 can form a good interface bond, and the effects of adjusting the thermal expansion coefficient and the thermal conductivity of the enclosed area 131 on the substrate 100 are better.

[0179] Since the diamond particles 120 are doped in the metal body 111 of the enclosed area 131, the matching of the thermal expansion coefficients of the substrate 100 and the tube shell 210 can be improved, the stress problem of the connection between the tube shell 210 and the substrate 100 can be improved, and the connection reliability of the tube shell 210 and the substrate 100 can be improved. At the same time, the thermal conductivity of the arrangement area of the light emitting chips 300 on the substrate 100 can be improved, the heat dissipation performance can be improved, and the use reliability of the laser 1000 can be improved.

[0180] Since the metal body 111 of the external area 132 is not doped with the diamond particles 120, the use amount of the diamond particles 120 can be reduced, and the cost can be reduced.

[0181] The laser 1000 of the embodiment of the present application has the diamond particles 120 doped in the metal body 111 of the enclosed area 131 of the substrate 100, the adjustment effect of the thermal expansion coefficient and the thermal conductivity of the enclosed area 131 on the substrate 100 is better, the matching of the thermal expansion coefficient of the substrate 100 and the tube shell 210 can be improved, the stress problem of the connection of the tube shell 210 and the substrate 100 is improved, and the connection reliability of the tube shell 210 and the substrate 100 is improved. At the same time, the thermal conductivity of the arrangement area of the light emitting chip 300 on the substrate 100 can be improved, the heat dissipation performance is improved, and the use reliability of the laser 1000 is improved. By not doping the diamond particles 120 in the metal body 111 of the external area 132, the use amount of the diamond particles 120 can be reduced, and the cost is reduced.

[0182] In some embodiments, as shown in FIG. 25, the enclosed area 131 includes a first area 1311 for fixing the tube shell 210 and a second area 1312 for mounting the light emitting chip 300. The first area 1311 is doped with a first volume fraction of diamond particles 120, and the second area 1312 is doped with a second volume fraction of diamond particles 120, and the second volume fraction is greater than the first volume fraction.

[0183] Since the second volume fraction is greater than the first volume fraction, the thermal conductivity of the second area 1312 on the substrate 100 can be higher. The second area 1312 on the substrate 100 for mounting the light emitting chip 300 has higher thermal conductivity, which can quickly conduct the heat generated by the light emitting chip 300 in the vertical direction (such as the Z direction in FIG. 25) to the metal body 111, and then to the outside through the metal body 111. The heat generated by the light emitting chip 300 during the light emitting process can be quickly dissipated through the substrate 100, achieving efficient and rapid heat dissipation, and improving the heat dissipation performance. Since the heat dissipation performance is improved, the risk of damage to the light emitting chip 300 due to excessive temperature can be reduced, and the use reliability of the laser 1000 is improved. At the same time, high-power light emitting chips 300 can be used, and the light emitting power of the laser 1000 can be increased. Since the second area 1312 on the substrate 100 for mounting the light emitting chip 300 can achieve efficient heat dissipation, the light emitting chip 300 arrangement can be more dense, and the packaging volume can be reduced, which is beneficial to the miniaturization of the laser 1000.

[0184] In this way, high light emitting power, high reliability, efficient heat dissipation, and miniaturization of the laser 1000 can be achieved.

[0185] FIG. 26 is a perspective structural schematic diagram of another laser 1000 provided by an embodiment of the present application. FIG. 27 is an exploded view of another laser 1000 provided by an embodiment of the present application. FIG. 28 is a cross-sectional schematic diagram of another laser 1000 provided by an embodiment of the present application.

[0186] As shown in FIGS. 26-28, the embodiment of the present application further provides a laser 1000. The laser 1000 comprises a circuit board 900, at least one substrate 100, at least one tube shell 210, a plurality of light emitting chips 300, and at least one light-transmitting sealing cover plate 400. The substrate 100 is fixedly connected with the circuit board 900. The material of the tube shell 210 is different from that of the substrate 100. The tube shell 210 has a first end 201 and a second end 202 which are axially oppositely arranged, the first end 201 is fixedly connected with the substrate 100, and the tube shell 210 and the substrate 100 enclose a containing space 500. The outer contour of the first end 201 axially projects to cover the substrate 100. The plurality of light emitting chips 300 are located in the containing space 500 and are attached to the surface of the substrate 100, and the light emitting chips 300 are used for emitting laser. The light-transmitting sealing cover plate 400 is fixedly connected with the second end 202, and the light-transmitting sealing cover plate 400 is used for sealing the containing space 500. The substrate 100 comprises a metal body 111 and a diamond layer 112 arranged on the surface of the metal body 111, and the diamond layer 112 is distributed with diamond particles 120; the surface of the substrate 100 comprises a first region 1311 for fixing the tube shell 210 and a second region 1312 for attaching the light emitting chips 300. The diamond layer 112 of the first region 1311 is provided with a first volume fraction of diamond particles 120, and the diamond layer 112 of the second region 1312 is provided with a second volume fraction of diamond particles 120, and the second volume fraction is greater than the first volume fraction.

[0187] The circuit board 900 can be a PCB (Printed Circuit Board). The substrate 100 can be fixed on the circuit board 900 through the bottom surface. The tube shell 210 can be located on the side of the substrate 100 away from the circuit board 900. Since the outer contour of the first end 201 of the tube shell 210 axially projects to cover the substrate 100, one tube shell 210 and one substrate 100 enclose one containing space 500, the substrate 100 forms the bottom of the containing space 500, and the tube shell 210 forms the sidewall of the containing space 500. The light-transmitting sealing cover plate 400 is fixedly connected with the second end 202 of the tube shell 210 away from the substrate 100, and the light-transmitting sealing cover plate 400 seals the containing space 500. The substrate 100, the tube shell 210, and the light-transmitting sealing cover plate 400 can constitute a packaging structure. The light emitting chips 300 are attached to the surface of the substrate 100. The circuit can be arranged in the tube shell 210 and the substrate 100, and is used for electrically connecting the light emitting chips 300 with the circuit board 900. The circuit board 900 is used for delivering current to the light emitting chips 300, the light emitting chips 300 emit laser under the action of the current, and the laser passes through the light-transmitting sealing cover plate 400 and is emitted out of the containing space 500.

[0188] The substrate 100 is fixedly connected with the end surface of the first end 201 of the tube shell 210 through the diamond layer 112 of the first region 1311. By setting the volume fraction of the diamond particles 120 in the diamond layer 112 of the first region 1311 as the first volume fraction, the difference between the thermal expansion coefficients of the first region 1311 of the substrate 100 and the tube shell 210 can be reduced, the first region 1311 of the substrate 100 for fixing the tube shell 210 has good thermal expansion coefficient matching with the tube shell 210, the stress problem of the connection between the tube shell 210 and the substrate 100 can be improved, and the connection reliability of the tube shell 210 and the substrate 100 is improved.

[0189] The substrate 100 is fixedly connected with the end surface of the first end 201 of the tube shell 210 through the diamond layer 112 of the first region 1311. By setting the volume fraction of the diamond particles 120 in the diamond layer 112 of the first region 1311 as the first volume fraction, the difference between the thermal expansion coefficients of the first region 1311 of the substrate 100 and the tube shell 210 can be reduced, the first region 1311 of the substrate 100 for fixing the tube shell 210 has good thermal expansion coefficient matching with the tube shell 210, the stress problem of the connection between the tube shell 210 and the substrate 100 can be improved, and the connection reliability of the tube shell 210 and the substrate 100 is improved.

[0190] The laser 1000 of the embodiment of the present application can improve the stress problem of the connection between the tube shell 210 and the substrate 100, and improve the connection reliability of the tube shell 210 and the substrate 100 by setting the diamond layer 112 in the first region 1311 of the substrate 100 for fixing the tube shell 210 and the second region 1312 for mounting the light-emitting chip 300. By setting the second volume fraction greater than the first volume fraction, the second region 1312 of the substrate 100 for mounting the light-emitting chip 300 has higher thermal conductivity, the heat dissipation problem of the light-emitting chip 300 can be improved, and the use reliability of the laser 1000 is improved. By setting the diamond layer 112 on the surface of the metal body 111, the use amount of the diamond particles 120 can be reduced, and the cost is reduced.

[0191] In some embodiments, as shown in FIG. 28, the first end 201 of the tube shell 210 has an opening. The first end 201 of the tube shell 210 is also provided with a stepped portion 203 surrounding the opening. The substrate 100 includes a top surface 151 facing away from the circuit board 900 and a side surface 152 connected to the top surface 151. The substrate 100 is embedded in the first end 201 of the tube shell 210, and the top surface 151 and the side surface 152 are fixedly connected with the surface of the stepped portion 203.

[0192] The first region 1311 of the substrate 100 includes the top surface 151 and the side surface 152 of the substrate 100, and the top surface 151 and the side surface 152 are provided with the diamond layer 112.

[0193] The stepped portion 203 of the tube shell 210 forms a nested fit with the substrate 100, which can limit the connection of the tube shell 210 and the substrate 100, and further improve the connection reliability of the tube shell 210 and the substrate 100.

[0194] The embodiment of the present application further provides a light source device, which can include a shell and a laser installed on the shell. The laser in the light source device can be any of the above lasers. The light source device can be used to provide laser in a laser projection device, and a plurality of optical devices can be fixed in the shell of the light source device. The optical devices fixed in the shell of the light source device can cooperate with other optical devices in the laser projection device to guide the laser emitted by the laser to a projection lens in the laser projection device, and then project the laser through the projection lens to form a picture.

[0195] In the present application, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance. The term "a plurality of" refers to two or more, unless otherwise explicitly limited.

[0196] The above description is only optional embodiments of the present application, and is not used to limit the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A laser characterized by, The application relates to a substrate, a frame and a light-emitting chip. The substrate comprises a substrate body, a support table and a connecting part, and the support table and the connecting part are arranged on the substrate body. The frame is distributed around the support table, and the frame is connected with the connecting part. The light-emitting chip is fixedly connected with the side of the support table which is away from the substrate body. The area of the connecting region between the connecting part and the frame is smaller than the area of the side of the frame which is towards the connecting part. The side of the connecting part which is away from the substrate body is connected with the side of the frame which is towards the substrate body.

2. The laser of claim 1, wherein, The connecting part is annular, and the support table is located in the region surrounded by the connecting part.

3. The laser of claim 2, wherein, Alternatively, the connecting part comprises a plurality of sub-connecting segments which are distributed around the support table, and there is a partition groove between any two adjacent sub-connecting segments which are distributed on the periphery of the support table. In the direction perpendicular to the substrate body, the height of the connecting part is smaller than or equal to the height of the support table.

4. The laser of claim 2, wherein, In the direction parallel to the substrate body, there is a first gap between the connecting part and the support table.

5. The laser of claim 2, wherein, The substrate comprises at least two connecting parts, each of which is distributed around the support table, and at least two connecting parts are distributed in a nested mode, and in the direction parallel to the substrate body, there is a second gap between two adjacent connecting parts.

6. The laser of claim 2, wherein, The orthographic projection of at least two connecting parts on the substrate body is located in the orthographic projection of the frame on the substrate body. The side of the connecting part which is towards the support table is connected with the side of the frame which is away from the support table.

7. The laser of claim 1, wherein, The substrate comprises two connecting parts which are distributed on the two sides of the frame which are oppositely arranged; the side of the substrate body which is distributed with the support table has two avoiding grooves which correspond to the two connecting parts one by one.

8. The laser of claim 7, wherein, In the direction parallel to the substrate body and perpendicular to the extension direction of the connecting part, each connecting part can extend into the corresponding avoiding groove, and the width of each connecting part is smaller than the width of the corresponding avoiding groove. The frame has a light-transmitting through hole, part of the support table is located in the light-transmitting through hole, and the inner wall of the light-transmitting through hole is in contact with the outer side surface of the support table.

9. The laser of any of claims 1 to 8, wherein, The substrate comprises two support tables, and the frame has two light-transmitting through holes which correspond to the two support tables one by one.

10. The laser of claim 9, wherein, Part of each support table is located in the corresponding light-transmitting through hole, and the inner wall of each light-transmitting through hole is in contact with the outer side surface of the corresponding support table. The substrate body, the support table and the connecting part are integrally formed structures made of oxygen-free copper material; and the material of the frame comprises a ceramic material.

11. The laser of claim 10, wherein, The laser comprises:

12. A laser, characterized by a substrate; at least one tube shell which is made of a material different from that of the substrate, has a first end and a second end which are oppositely arranged in the axial direction, and is fixedly connected with the substrate, so that the tube shell and the substrate enclose a containing space. ​ a plurality of light emitting chips located in the accommodating space and attached to the surface of the substrate, the light emitting chips being configured to emit laser light; at least one light-transmitting sealing cover plate fixedly connected with the second end, the light-transmitting sealing cover plate being configured to seal the accommodating space; the substrate comprises a metal body and a diamond layer arranged on the surface of the metal body, and the diamond layer is distributed with diamond particles; the substrate comprises an enclosed area covered by the axial projection of the outer contour of the first end and an external area outside the enclosed area, the enclosed area is provided with the diamond layer, and the external area is not provided with the diamond layer.

13. The laser of claim 12, wherein, the enclosed area comprises a first area for fixing the tube shell and a second area for attaching the light emitting chips; the diamond layer in the first area is provided with a first volume fraction of diamond particles, the diamond layer in the second area is provided with a second volume fraction of diamond particles, and the second volume fraction is greater than the first volume fraction.

14. The laser of claim 13, wherein, The absolute value of the difference between the thermal expansion coefficient of the first area of the substrate and the thermal expansion coefficient of the tube shell is less than or equal to 1E-6 / ℃.

15. The laser of claim 13, wherein, The thermal conductivity of the second area of the substrate is at least twice the thermal conductivity of the metal body.

16. The laser of claim 13, wherein, The thickness of the diamond layer of the first area is greater than or equal to the particle size of the diamond particles, and less than twice the particle size of the diamond particles, and the thickness of the diamond layer of the second area is greater than the thickness of the diamond layer of the first area.

17. The laser of claim 12, wherein, The number of the tube shell is one, and the plurality of light emitting chips are located in one of the accommodating spaces; or The number of the tube shell is two, and the two tube shells and the substrate form two accommodating spaces, at least one of the light emitting chips is located in one of the accommodating spaces and is configured to emit laser light of a first color, and a plurality of the light emitting chips are located in another of the accommodating spaces and are configured to emit laser light of a second color and a third color.

18. The laser of any of claims 12 to 17, wherein, The material of the metal body comprises oxygen-free copper, and / or the material of the tube shell comprises ceramic.

19. A laser, characterized by The laser comprises: a substrate; at least one tube shell, the material of the tube shell being different from the material of the substrate, the tube shell having an axially oppositely arranged first end and a second end, the first end being fixedly connected with the substrate, and the tube shell and the substrate enclosing an accommodating space; a plurality of light emitting chips located in the accommodating space and attached to the surface of the substrate, the light emitting chips being configured to emit laser light; at least one light-transmitting sealing cover plate fixedly connected with the second end, the light-transmitting sealing cover plate being configured to seal the accommodating space; the substrate comprises an enclosed area covered by the axial projection of the outer contour of the first end and an external area outside the enclosed area; the substrate comprises a metal body and diamond particles doped in the metal body of the enclosed area, and the metal body of the external area is not doped with the diamond particles.

20. The laser of claim 19, wherein, the enclosed area comprises a first area for fixing the tube shell and a second area for attaching the light emitting chips; The first region is doped with a first volume fraction of diamond particles, and the second region is doped with a second volume fraction of diamond particles, and the second volume fraction is greater than the first volume fraction.

21. A laser, characterized by The laser comprises: a circuit board; at least one substrate fixedly connected with the circuit board; at least one tube shell made of a material different from that of the substrate, the tube shell having axially oppositely arranged first and second ends, the first end being fixedly connected with the substrate, and the tube shell and the substrate enclosing a receiving space; and an outer contour of the first end axially projects onto the substrate; a plurality of light emitting chips located in the receiving space and attached to a surface of the substrate, the light emitting chips being configured to emit laser light; at least one light-transmitting sealing cover plate fixedly connected with the second end, the light-transmitting sealing cover plate being configured to seal the receiving space; the substrate comprises a metal body and a diamond layer arranged on a surface of the metal body, and the diamond layer is distributed with diamond particles; and a surface of the substrate comprises a first region configured to fix the tube shell and a second region configured to attach the light emitting chips; the diamond layer of the first region is provided with a first volume fraction of diamond particles, and the diamond layer of the second region is provided with a second volume fraction of diamond particles, and the second volume fraction is greater than the first volume fraction.

22. A light source arrangement, characterized by comprises: a housing, and a laser mounted on the housing, the laser being any one of the lasers as claimed in claims 1 to 11; or the laser being any one of the lasers as claimed in claims 12 to 18; or the laser being the laser as claimed in claim 19 or 20; or the laser being the laser as claimed in claim 21.

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