Process gas delivery system

Abstract

Disclosed herein is a process gas delivery system comprising a multichannel chemistry delivery assembly, comprising at least a first precursor vessel and a second precursor vessel a first flow selector valve having a first inlet port coupled to a first outlet channel of the multichannel chemistry delivery assembly, wherein the first precursor vessel is coupled to the first outlet channel, a second flow selector valve having a second inlet port coupled to a second outlet channel of the multichannel chemistry delivery assembly, wherein the second precursor vessel is coupled to the second outlet channel. The first and second flow selector valves are coupled to a gas delivery line coupled to a showerhead of a process vacuum chamber. The flow selector valves are coupled to a first trickle purge line and a second trickle purge line.

Description

PROCESS GAS DELIVERY SYSTEMCLAIM FOR PRIORITY

[0001] This application claims priority to U.S. Provisional Patent Application No. 63 / 693,616, filed on September 11, 2024, titled “PROCESS GAS DELIVERY SYSTEM,’7which is incorporated by reference in its entirety for all purposes.BACKGROUND

[0002] Substrate processing for etch and deposition form a backbone of the semiconductor industry. While a variety of processing techniques may be utilized, virtually all processes utilize a showerhead to deliver process gases to a substrate waiting process. A showerhead can be used to distribute process gas containing one or more film deposition precursors over an entire semiconductor wafer. In many cases, process chambers are equipped with a single processing station, where a single showerhead is provided. Many film deposition processes utilize two or more gas-bome precursors in addition to other substances to form thin films on semiconductor wafers. However, gas delivery systems for single station chambers are designed to handle single precursor feeds. Multiple precursor deposition chemistries may be more difficult to implement in such systems.BRIEF DESCRIPTION OF DRAWINGS

[0003] Material described herein is illustrated by way of example and not by way of limitation in accompanying figures. For simplicity and clarity of illustration, elements illustrated in figures are not necessarily drawn to scale. For example, dimensions of some elements may be exaggerated relative to other elements for clarity. Also, various physical features may be represented in their simplified “ideal” forms and geometries for clarity of discussion, but it is nevertheless to be understood that practical implementations may approximate illustrated ideals. For example, smooth surfaces and square intersections may be drawn in disregard of finite roughness, comer-rounding, and imperfect angular intersections characteristic of structures formed by nanofabrication techniques. Further, where considered appropriate, reference labels have been repeated among figures to indicate corresponding or analogous elements.

[0004] Fig. 1A illustrates a first portion of a piping and instrumentation diagram (P&I D) for a process gas delivery system, in accordance with at least one implementation.Docket No.: 11948-1 WO

[0005] Fig. IB illustrates a second portion of the piping and instrumentation diagram for the process gas delivery system shown in Fig. 1A, in accordance with at least one implementation.

[0006] Fig. 2A illustrates a piping and instrumentation diagram (P&ID) for a main gas box of the process gas delivery' system illustrated in Figs. 1A and IB, showing details of the main gas conditioning block groups within the main gas box, in accordance with at least one implementation.

[0007] Fig 2B illustrates a piping and instrumentation diagram (P&ID) for an auxiliary' gas box of the process gas delivery' system illustrated in Figs. 1A and IB, showing details of the auxiliary gas conditioning block groups within the auxiliary gas box, in accordance with at least one implementation.

[0008] Fig. 3 illustrates a flow' chart of a method for operating a gas delivery system, such as the process gas delivery system illustrated in Figs. 1A and IB, in accordance with at least one implementation.

[0009] Fig. 4 illustrates a processor system with a machine-readable storage medium having machine-readable instructions that when executed cause a circuit board of a control unit of the process gas delivery system illustrated in Figs. 1A and IB to execute machine- readable instructions according to the method summarized by flow chart of Fig. 3, in accordance with at least one implementation.SUMMARY

[0010] A process gas delivery apparatus is described which comprises a multichannel chemistry' delivery assembly, comprising a first precursor vessel and a second precursor vessel. In at least one example, the apparatus comprises a first flow selector valve having a first inlet port coupled to a first outlet channel of the multichannel chemistry delivery’ assembly, wherein the first precursor vessel is coupled to the first outlet channel. In at least one example, the apparatus further comprises a second flow' selector valve having a second inlet port coupled to a second outlet channel of the multichannel chemistry delivery' assembly, wherein the second precursor vessel is coupled to the second outlet channel, and wherein a gas delivery line is coupled to a first outlet of the first flow selector valve and is coupled to a second outlet of the second flow selector valve.

[0011] In at least one implementation, a process gas delivery' system is described which comprises a multichannel chemistry delivery' assembly, comprising a first precursor vessel and a second precursor vessel. In at least one example, the process gas delivery system comprises a first flow selector valve having a first inlet port coupled to a first outlet channelDocket No.: 11948-1 WO of the multichannel chemistry delivery' assembly, wherein the first precursor vessel is coupled to the first outlet channel. In at least one example, the process gas delivery system comprises a second flow selector valve having a second inlet port coupled to a second outlet channel of the multichannel chemistry' delivery' assembly, wherein the second precursor vessel is coupled to the second outlet channel. In at least one example, a gas delivery' line is coupled to a first outlet of the first flow selector valve and is coupled to a second outlet of the second flow selector valve. In at least one example, the process gas delivery system comprises a showerhead coupled to the gas delivery line. In at least one example, the process gas delivery system comprises a gas box coupled to the gas delivery line, wherein the gas box is coupled to one or process gas sources.

[0012] In at least one implementation, a method for operating a process gas delivery system is provided which comprises flowing a carrier gas to a multichannel chemistry delivery assembly comprising a first precursor vessel and a second precursor vessel, wherein the carrier gas flows into the first precursor vessel and into the second precursor vessel. In at least one example, the process gas delivery system comprises a first flow selector valve having a first inlet port coupled to a first outlet channel of the multichannel chemistry delivery assembly. The process gas delivery' system further comprises a second flow selector valve having a second inlet port coupled to a second outlet channel of the multichannel chemistry delivery assembly.

[0013] The process gas delivery system further comprises a gas delivery line coupled to a first outlet of the first flow selector valve and coupled to a second outlet of the second flow selector valve. The process gas delivery system further comprises a first trickle purge line coupled to a third inlet port of the first flow selector valve. The process gas delivery system further comprises a second trickle purge line coupled to a fourth inlet port of the second flow selector valve. In at least one example, the method further comprises flowing a trickle purge in the first trickle purge line and in the second trickle purge line, wherein the trickle purge imposes a pressure on the third inlet port of the first flow selector valve and on the fourth inlet port of the second flow selector valve. The method further comprises flowing a first precursor feed from the first outlet channel of the multichannel chemistry delivery assembly to the first inlet port of the first flow selector valve. The method further comprises flowing a second precursor feed from the second outlet channel of the multichannel chemistry' delivery' assembly to the second inlet port of the second flow selector valve.Docket No.: 11948-1 WODETAILED DESCRIPTION

[0014] One or more apparatus and methods for a process gas delivery’ system capable of providing multiple precursor feeds are described. The disclosed process gas delivery system comprises a dedicated chemistry delivery assembly having two precursor channels. The dedicated chemistry’ delivery assembly comprises two or more precursor vessels that hold liquid or solid precursor substances. In at least one example, the chemistry delivery’ assembly is configured to deliver vaporized precursors sequentially using flow-over-vapor methods by a carrier gas entraining precursor vapor by flowing though the individual precursor vessels in the chemistry delivery assembly. In at least one implementation, tyvo multiport flow selector valves are coupled to a dedicated precursor outlet channel of the chemistry delivery' assembly. The two multiport flow selector valves are configured to direct precursor flow to a showerhead in a single station process vacuum chamber via a gas delivery line, or to a dedicated divert line to fore line vacuum.

[0015] In at least one example, the two multiport flow selector valves are also coupled to a trickle purge flow at a second inlet to maintain a positive pressure on the gas delivery’ line when precursor is not flowing through one of the valves to prevent backflow and diffusion of other process gases and to prevent crosstalk between precursors. In at least one example, the tyvo multiport valves are operated in conjunction with tyvo divert control valves, where one of the divert valves is opened to divert one of the two precursors to flow to the vacuum fore line while the other precursor is alloyved to flow to the showerhead. During sequential precursor delivery operation, the tyvo divert valves may be operated in reverse, allowing the second precursor to floyv to the shoyverhead yvhile the first precursor is diverted. In at least one implementation, one or both precursor feed flow s may be halted, and the trickle purge flowmay be maintained to prevent backflow into the tyvo multiport valves from the gas delivery’ line. Other gaseous precursor substances and non-precursor substances such as inhibitors may flow from upstream sources into the gas delivery line in the absence of the vaporized precursors.

[0016] Here, the same reference numbers or other reference designators are used in the drawings to designate the same or similar (either by function and / or structure) features.

[0017] Fig. 1A illustrates a piping and instrumentation diagram (P&I D) for a process gas delivery’ system 100, in accordance with at least one implementation. Process gas delivery system 100 comprises a precursor delivery' assembly 102. In at least one example, precursor delivery assembly 102 comprises a precursor vessel 104 and a precursor vessel 106. Precursor vessels 104 and 106 may contain a liquid or solid deposition film precursorDocket No.: 11948-1 WO material. In at least one implementation, precursor vessels 104 and 106 are heated for generation of vapors. In at least one implementation, a nitrogen carrier line 108 is coupled to precursor vessels 104 and 106. Nitrogen earner line 108 is configured to transport a carrier gas, such as nitrogen, to carry precursor vapors emanating from the solid or liquid precursor material by flow over vapor (FOV) methods. In at least one example, precursor vapor from precursor vessel 104 is carried out of precursor delivery assembly 102, at the channel A outlet, to inlet port A of flow selector valve 110, whereas precursor vapor from precursor vessel 106 is carried out of precursor delivery assembly 102, at the channel B outlet, to inlet port A of flow selector valve 112. Both flow selector valves 110 and 112 are delineated by the dashed boxes.

[0018] In at least one example, flow selector valves 110 and 112 are four port valves, having two ports configured as inlets and two ports configured as outlets. In the P&I D provided in Fig. 1A, ports of flow selector valves 110 and 112 are labeled A, B, C, and D. In at least one implementation, flow selector valves 110 and 112 operate by closing and opening a diaphragm to isolate ports C and D from ports A and B. For example, the diaphragm is normally closed (e.g., N.C.). and must be actively opened. In the illustrative example of Fig. 1A, ports A and C are configured as inlet ports, and ports B and D are configured as outlet ports. In the illustrative implementation of Fig. 1A, ports C of both flow selector valves 110 and 112 are coupled to trickle purge lines 114 and 116, respectively. Ports D of both flow selector valves 110 and 112 are coupled to a gas delivery line 118. Short-dashed lines accompanying gas delivery line 1 18 and other lines within process gas delivery system 100 indicate heated lines. Heated lines within process gas delivery' system 100 may be thermally coupled to one or more heat sources (not show n). Heating of lines may be performed by heat tape wraps or clamping heaters thermally coupled to the one or more heat sources, accompanied by thermal insulation. During operation, the diaphragm is opened to allow precursor gas (e.g., a mixture of precursor vapor diluted in a carrier gas flow) to flow' from inlet port A to outlet port D. During operation, precursor gas flow s into gas delivery' line 118 through outlet port D, reaching a tee junction 120. In at least one implementation, tee junction 120 is coupled to gas distribution showerhead 122. In at least one implementation, gas distribution showerhead 122 enables flow of precursor gas into a process vacuum chamber 124 during a film deposition process.

[0019] During operation, precursor gases emanating from channel A or channel B of precursor delivery assembly 102 may flow sequentially into process vacuum chamber 124 via gas distribution showerhead 122. For example, precursor A from channel A may flow firstDocket No.: 11948-1 WO into gas distribution showerhead 122 through gas delivery' line 1 18. then precursor B from channel B may flow to gas distribution showerhead 122 after precursor A flow is terminated. In at least one implementation, precursor A and precursor B are allowed to flow simultaneously through gas delivery' line 118 to gas distribution showerhead 122, provided they do not react prior to deposition. In at least one implementation, where precursors are delivered to gas distribution showerhead 122 sequentially, outlet ports B of flow selector valves 110 and 112 are coupled to a divert valve 126 and to a divert valve 128. respectively. In at least one example, divert valves 126 and 128 are two-port valves coupled to a divert line 130 and to a divert line 132, respectively. In at least one example, divert lines 130 and 132 are coupled to a chamber disconnect block 134, permitting precursor gas flow from channel A or channel B to bypass process vacuum chamber 124 and flow to a vacuum fore line 136 to be exhausted. In at least one implementation, channel A maintenance vacuum line 135 and channel B maintenance vacuum line 137 are coupled to precursor vessels 104 and 106, respectively, and to divert lines 130 and 132, respectively. In at least one example, channel A and channel B maintenance vacuum lines 135 and 137 maintain precursor vessels 104 and 106, respectively, at a low pressure (e.g., 10 torr or less). In at least one implementation, maintenance vacuum lines 135 and 137 are configured to aspirate liquid precursor from precursor vessels 104 and 106 to divert lines 130 and 132 in case of heater failure (e.g., to heat liquids or solids to form vapors). As maintenance vacuum lines 135 and 137 are connected to divert lines, precursor vessels 104 and 106 may be emptied by diverting directly to vacuum fore line 136, bypassing chamber 124.

[0020] Such a chamber bypass of precursor A or B may be performed during sequential flow of precursors A and B, for example, where precursor A flows into gas distribution showerhead 122 and precursor B is diverted to vacuum fore line 136. Here, the diaphragm of flow selector valve 1 10 is opened by pneumatic actuation, allowing precursor A to flow to outlet port D. Divert valve 126 is closed to prevent precursor A from flowing into divert line 130 while divert valve 128 is opened to allow precursor B to flow into divert line 132. To further prevent precursor B from flowing into gas delivery’ line 118 while precursor A is being delivered to gas distribution showerhead 122. the diaphragm of flow selector valve 112 is closed. In at least one implementation, during flow of precursor B, precursor A may then be diverted to vacuum fore line 136 by opening divert valve 128 while closing the diaphragm of flow selector valve 110. For flow of precursor B to gas distribution showerhead 122, the diaphragm of flow selector valve 112 is opened by pneumatic actuation, allowing precursor B to flow to outlet port D of valve 112. Divert valve 128 is closed to stop flow of precursor BDocket No.: 11948-1 WO into divert line 132. In at least one implementation, carrier flow may be interrupted to either precursor vessel 104 or precursor vessel 106 to halt flow to flow selector valve 110 or to flow selector valve 112.

[0021] Trickle purge flow in trickle purge lines 114 and 116, which may include nitrogen as a trickle flow gas, may be present at inlet port C during operation. In at least one example, trickle purge flow imposes a positive pressure within flow selector valves 110 and 112, and may be adjusted to maintain a substantially constant positive pressure at port D to prevent crosstalk between precursor channels, and to also prevent backflow or diffusion of other reactive gases flowing in gas delivery line 118 into port D. Such infiltration of other reactive gases or different precursors through outlet ports D may contaminate passages of flow selector valves 110 and 112. and ultimately contaminate or react with precursor flowing in precursor delivery lines leading to precursor delivery assembly 102. Such infiltration of reactive gases or precursor crosstalk can potentially cause unwanted deposition of solid or liquid materials within passages of flow selector valves 110 and 112 and associated precursor delivery lines, possibly causing clogging of these passages and lines.

[0022] Fig. IB illustrates a continuation of Fig. 1A, showing another portion of the P&I D for process gas delivery system 100, in accordance with at least one implementation. Process gas delivery system 100 further comprises a main gas box 138 and an auxiliary gas box 140. Main gas box 138 comprises multiple gas conditioning blocks (e.g.. sticks). In at least one example, main gas box 138 is a ten-channel gas box, comprising a gas conditioning block group 142, a gas conditioning block group 144, and a gas conditioning block group 146. In at least one implementation, gas conditioning block group 142 comprises three gas conditioning blocks, each block handling a different gas. For example, gas conditioning block group 142 has three dedicated gas conditioning blocks: a first block for nitrogen gas (N2), a second block for silicane (SiHa), and a third block for hydrogen gas (H2). Individual gas conditioning blocks within gas conditioning block group 142 are coupled to a manifold 148 (e.g., manifold A), whereas gas conditioning block group 144 is coupled to a manifold 150 (e.g., manifold B) and gas conditioning block group 146 is coupled to a manifold 152 (manifold D). In at least one implementation, tetramethyl silane (4MS) is handled by gas conditioning block group 146. In at least one implementation, gas conditioning block group 146 is coupled to gas conditioning block group 142 and / or gas conditioning block group 144 to enable mixing of tetramethyl silane, for example, with one or more of the gases handled by gas conditioning block groups 142 and 144. In at least one implementation, a divert line 154 and a divert line 156 are provided to manifold 148 (man A) and manifold 152 (man D),Docket No.: 11948-1 WO respectively, with divert valves 158 and 160 to allow bypass to fore line 136. Details of gas conditioning block groups 142, 144. and 146 are given in the description associated with Fig. 2A.

[0023] In at least one implementation, in-line metering valves, such as valve 162, are included with manifolds 148, 150, and 152 for fine control of gases flowing from main gas box 138 to gas delivery’ line 118. Other valves, such as valve 164 and valve 166, are on / off valves for coarse control of gas flow. For example, valves 164 and 166, may be two-port dual state valves, such as open / closed, to allow or block gas flow from main gas box 138 into manifolds 148 - 152 (e.g., valve 164) or from manifolds 148-152 into gas delivery7line 118 (e.g., divert valve 158). Metering valves such as valve 162 may be variable valves, allowing adjustment of flow within each of manifolds 148-152 for mixing of gases in precise proportions to flow’ into gas delivery’ line 118, w’here the gases may mix. In at least one example, chamber disconnect block 168 is provided to allow bypass of manifolds 148, 150, and 152.

[0024] In at least one implementation, auxiliary gas box 140 comprises gas conditioning block 170, gas conditioning block 172, and gas conditioning block 174. In an exemplary implementation, gas conditioning block 172 conditions an oxygen flow’, whereas gas conditioning block 174 conditions an argon flow’. Oxygen and argon flow s may mix in line 176 and enter manifold 150 through mixing valve 178. In at least one implementation, manifold 150 is coupled to remote plasma cleaning (RPC) source 180 through valve 182, which is an open / closed valve to divert flow' of oxygen and argon to RPC source 1 0. In at least one example, RPC source 180 is an oxygen and / or argon ion plasma source for cleaning process vacuum chamber 124 betw een film deposition processes. In at least one example, RPC source 180 is coupled to showerhead 122 through tee junction 120.

[0025] In at least one implementation, facility nitrogen from facility nitrogen source 184 is conditioned by gas conditioning block 174 in auxiliary gas box 140. In at least one example, gas conditioning block 174 distributes conditioned nitrogen into carrier gas line 108 and trickle purge lines 114 and 116.

[0026] Fig. 2A illustrates a P&I D for main gas box 138, showing details of gas conditioning block groups 142, 144, and 146, in accordance with at least one implementation. Gas conditioning block group 142 comprises gas conditioning blocks 200, 202, and 204, shown schematically in the P&I D diagram. The individual gas conditioning blocks may be shown as a line with various valves and gas conditioning components distributed along the line. In at least one implementation, each of gas conditioning blocks 200-204 have a lock-outDocket No.: 11948-1 WO tag-out (LOTO) valve 206 at the inlets. It is understood that identical components appearing as common features on all gas conditioning blocks in the P&I D of Fig. 2A and Fig. 2B are referenced only once. For example, gas conditioning blocks in main gas box 138 include an LOTO valve 206 at each inlet. In at least one implementation, LOTO valves 206 are followed by a pressure regulator 208 in gas conditioning blocks. In at least one example, a mass flow controller 210 is also included on each gas conditioning block.

[0027] In at least one implementation, gas conditioning blocks 200-204 each are dedicated to a specific gas. For example, gas conditioning block 200 is configured to condition nitrogen, whereas gas conditioning block 202 is configured to condition hydrogen. A pressurized source for each gas may be coupled to the inlets (at LOTO valve end) of gas conditioning blocks 200-204. In at least one example, the order of pairing of a gas to a specific gas conditioning block in gas conditioning block group 142 may be arbitrary.

[0028] In at least one example, gas conditioning block group 146 comprises one gas conditioning block 212. In at least one implementation, gas conditioning block 212 is coupled to gas conditioning blocks 202 and 204 in gas conditioning block group 142. In the illustrated implementation, valve 214 branches gas flow to line 216. which branches to valve 218 and valve 220 on gas conditioning blocks 202 and 204, respectively. Valves 214, 218, and 220 may be actuated diaphragm valves for precise metering. For example, gas conditioning block 212 in gas conditioning block group 146 may be dedicated to flow tetramethyl silane. Valves 214-218 on gas conditioning blocks 212, 202. and 204, respectively, may enable branching of tetramethyl silane flow to mix with nitrogen and / or hydrogen flows occurring in gas conditioning block group 142. In at least one example, outlets of gas conditioning blocks 200, 202, and 204 are coupled to manifold 148 (e.g., manifold A) and divert line 154 to vacuum fore line 136. In at least one implementation, the outlet of gas conditioning block 212 in gas conditioning block group 146 is coupled to manifold 152 and divert line 156 to fore line 136.

[0029] In at least one implementation, similar branching occurs in gas conditioning block group 144, having six gas conditioning blocks: gas conditioning block 222, gas conditioning block 224, gas conditioning block 226, gas conditioning block 228. gas conditioning block 230 and gas conditioning block 232. In the exemplary implementation shown in Fig. 2A, gas conditioning block 224 is coupled to gas conditioning blocks 222 and 228 by branching through valve 234. All gas conditioning block outlets in gas conditioning block group 144 are coupled to manifold 150 (e.g., manifold B or man B).

[0030] In different implementations, various gases conditioned by gas box 138 may be combined with precursor vapors flowing from precursor vessels 104 and 106 in gas deliveryDocket No.: 11948-1 WO line 118. For example, a mixture comprising precursor A and other inert or reactive gases flowing from gas box 138 may be possible. For example, gas box 138 may treat any combination of nitrogen, hydrogen, carbon dioxide, silane, tetramethyl silane, ammonia gas, nitrogen trifluoride (NF3), helium, and water vapor. Thus, gas delivery line may carry a mixture of precursor A and tetramethyl silane, for example, or precursor B and hydrogen and / or water vapor. Any suitable combination of precursors A and / or B, plus any suitable mixture of reactive and inert gases from gas box 138 may be permitted to flow in gas delivery line 118 to showerhead 122. The choice of combinations may depend on a particular deposition process, for example. In some implementations, precursor A and precursor B may flow sequentially in gas delivery line 118. In other implementations, precursor A and precursor B may flow simultaneously.

[0031] Fig. 2B illustrates a P&I D for auxiliary gas box 140, showing details of gas conditioning block groups 142, 144, and 146, in accordance with at least one implementation. In at least one example, auxiliary gas box 140 comprises three gas conditioning blocks: gas conditioning block 170, gas conditioning block 172, and gas conditioning block 174. as shown in Fig. IB. In at least one implementation, gas conditioning block 170 comprises mass flow controller 242, in addition to LOTO valve 206 and pressure regulator 208. Other valves and components such as pressure transducer 244 are included on gas conditioning block 170. In at least one example, gas conditioning block 170 is configured to handle oxygen (O2) flow. Gas conditioning blocks 170 and 172 are coupled to pressurized oxygen and argon sources, respectively, at their inlets.

[0032] In at least one implementation, gas conditioning block 172 comprises mass flow controller 246 in addition to LOTO valve 206, pressure regulator 208 and pressure transducer 248. Other valves and gas conditioning components may also be included on gas conditioning block 172. In at least one example, gas conditioning block 172 is configured to handle an argon (Ar) flow.

[0033] In at least one implementation, outlets of gas conditioning blocks 170 and 172 are tied together and coupled to valve 178 on manifold B (e.g., manifold 150), as shown in Fig. IB. In at least one example, oxygen and argon conditioned by gas conditioning blocks 170 and 172 are plasma gases supplied to the RPC source 180.

[0034] In at least one implementation, gas conditioning block 174 is coupled to a pressurized gas source, such as a nitrogen gas (N2) source, at its inlet. Gas conditioning block 174 includes pressure transducer 250, in addition to LOTO valve 206 and pressure regulator 208. Other gas conditioning components may also be included in gas conditioning block 174.Docket No.: 11948-1 WOIn at least one example, branch 252 of gas conditioning block 174 comprises two additional branches for trickle purge delivery to trickle purge delivery lines 114 and 116, as shown in Fig. 1A. In at least one implementation, the two trickle purge branch lines include mass flow controller 254 and mass flow controller 256, respectively.

[0035] Fig. 3 illustrates a flowchart 300 of an exemplary7method for operating a gas delivery system, such as process gas delivery system 100. in accordance with at least one implementation. In the following description, method operations refer to the process gas delivery system 100 and components therein, as described in Figs. 1A and IB.

[0036] At operation 302, nitrogen carrier gas or another inert carrier gas, such as argon, is flowed from a source, such as facility nitrogen source 184, to a precursor source module (e.g., precursor delivery assembly 102). An inert gas, such as nitrogen gas, flows into precursor vessels within the precursor source module, such as precursor vessels 104 and 106, and entrains vapors from liquid and solid-state precursor materials. Entrained precursor A and B, emanating from precursor vessels 104 and 106, respectively, flow to outlets labelled channel A and channel B.

[0037] At operation 304. precursor flow is initiated to the showerhead (e.g., gas distribution showerhead 122). Precursor A and precursor B are caused to flow sequentially to the showerhead by operation of the two flow selector valves, such as flow selector valves 110 and 112. In some implementations, precursor A and precursor B may flow simultaneously. In at least one implementation, the flow selector valves are coupled to channel A and channel B, respectively. In the present example, precursor A is flowed first, then precursor B is flowed. To effectuate such a sequence, one of the flow selector valves, for example, flow selector valve 110, is operated to flow precursor A from channel A to the showerhead of a process vacuum chamber (e.g.. process vacuum chamber 124), while flow selector valve 112 is operated to divert flow of precursor B to vacuum through the fore line (e.g., fore line 136) of the process vacuum chamber. In at least one example, flow selector valves 110 and 112 are four-port diaphragm valves. In at least one implementation, two of the ports are configured as inlets and two of the ports are configured as outlets. One of the inlets, for example, port A of both valves, is coupled to the outlets of precursor vessels within the precursor module.

[0038] In at least one example, ports C of each flow selector valve are coupled to a trickle purge flow of an inert gas, such as nitrogen (e.g., through trickle purge lines 114 and 116). The nitrogen may be derived from the facility source, for example. One of the outlets of the flow selector valve, for example port D. is coupled to a gas delivery7line, coupled to the showerhead, while the second outlet (e.g., port B) is coupled to a divert valve (e.g., divertDocket No.: 11948-1 WO valves 126 and 128). The divert valve is coupled to divert lines that are coupled to the vacuum fore line for exhausting either precursor A or precursor B to a trap, for example, in the vacuum line of the process vacuum chamber.

[0039] The trickle purge flow of purge gas (e.g., N2) may be ever-present at ports C, and is adjusted to maintain a back pressure at port D to prevent back flow of other gases flowing in the gas delivery line 118 into the flow selector valves and preventing cross talk between precursor A and precursor B. Such backflow and cross talk can contaminate precursor lines and may also lead to clogging of lines and passages within the flow selector valves.

[0040] Precursor A feed is introduced into flow selector valve 110 at port A. The flow selector valve is actuated to open its diaphragm, which is normally closed, to connect all four ports of the valve internally. Thus, precursor A feed flows from port A to all other ports, as the internal passages allow communication between all four ports when the diaphragm is opened. At port B, a divert valve (e.g., divert valve 126) is closed, preventing flow of precursor A into divert line 130. At port C, another inlet to the valve, the trickle purge is present and adjusted so that precursor A cannot flow toward port C, but to port D. Port D is coupled to gas delivery line 118. allowing precursor A to flow into this line. Here, precursor A may mix with other gases flowing into gas delivery line 118 from manifolds A, B, and D. Gas delivery line 118 delivers precursor A to gas distribution showerhead 122.

[0041] While precursor A feed is flowing in gas delivery line 118, precursor B is diverted to the vacuum fore line through divert line 132. Here, flow selector valve 112 is in the normally closed state, where the diaphragm isolates ports A and B from ports C and D. Thus, precursor B can flow from port A to port B. In at least one implementation, port B is coupled to divert valve 128, which is opened to allow precursor B to flow into divert line 132 and out to vacuum fore line 136. The duration of operation 304 may be the duration of an initial step of a film deposition occurring in process vacuum chamber 124, for example.

[0042] At operation 306, precursor B feed is caused to flow to gas distribution showerhead 122 by reversing the valve opening and closing procedure. This operation may be undertaken after the initial deposition step is terminated and a subsequent film deposition step involving precursor B is undertaken. Here, flow selector valve HO is closed, divert valve 126 is opened, allowing precursor A to flow into divert line 130 and out to vacuum through fore line 136. Flow selector valve 112 is opened, allowing precursor B to flow into gas delivery' line 118 and to gas distribution showerhead 122.

[0043] Fig. 4 illustrates a processor system 400 with a machine-readable storage medium having machine-readable instructions that when executed cause a circuit board of a controlDocket No.: 11948-1 WO unit of process gas delivery system 100 to execute machine-readable instructions according to the method summarized by flowchart 300. in accordance with at least one implementation. In at least one example, processor system 400 comprises memory 401, processor 402, machine- readable storage medium 403 (also referred to as tangible machine-readable medium), communication interface 404 (e.g., wireless or wired interface), and network bus 405, coupled together as shown. In at least one example, processor system 400 may be part of a computing system associated with process gas delivery system 100. In at least one implementation, processes described herein may be stored in machine readable medium 403 as computer-executable instructions. In at least one implementation, a machine-readable storage medium may be random access memory (RAM).

[0044] In at least one example, processor 402 is a digital signal processor (DSP), an application specific integrated circuit (ASIC), a general-purpose central processing unit (CPU), or a low power logic implementing a simple finite state machine to perform various processes described herein.

[0045] In at least one example, various logic blocks of processor system 400 are coupled together via network bus 405. Any suitable protocol may be used to implement network bus 405. In at least one implementation, machine-readable storage medium 403 includes instructions (also referred to as program software code / instructions) for actuating valves of the process gas delivery system, and heating portions of delivery lines, for example, coded into software stored in machine-readable storage medium 403.

[0046] In at least one implementation, machine-readable storage media 403 is a machine- readable storage media w ith instructions for operation of process gas delivery system 100. In at least one implementation, machine-readable medium 403 has machine-readable instructions, that when executed, cause processor 402 to perform the method discussed herein.

[0047] In at least one example, program software code / instructions associated with various implementations may be implemented as part of an operating system or a specific application, component, program, object, module, routine, or other sequence of instructions or organization of sequences of instructions referred to as "program software code / instructions," "operating system program software code / instructions," "application program software code / instructions," or simply "software" or firmware embedded in processor. In some implementations, program software code / instructions associated with processes of various implementations are executed by processor system 400.Docket No.: 11948-1 WO

[0048] In at least one example, machine-readable storage media 403 is a computer executable storage medium. In at least one implementation, program software code / instructions associated with various implementations are stored in computer executable storage medium 403 and executed by processor 402. Here, computer executable storage medium 403 is a tangible machine-readable medium 403 that can be used to store program software code / instructions and data that, when executed by a computing device, causes one or more processors (e.g., processor 402) to perform a process.

[0049] In at least one implementation, tangible machine-readable medium 403 may include storage of executable software program code / instructions and data in various tangible locations, including for example, ROM, volatile RAM, non-volatile memory, and / or cache, and / or other tangible memory as referenced in present application. Portions of this program software code / instructions and / or data may be stored in any one of these storage and memory devices. In some implementations, program software code / instructions can be obtained from other storage, including, e.g., through centralized servers or peer to peer networks and the like, including the Internet. Different portions of software program code / instructions and data can be obtained at different times and in different communication sessions or in the same communication session.

[0050] In at least one example, software program code / instructions associated with various implementations can be obtained in their entirety prior to execution of a respective software program or application. Alternatively, portions of software program code / instructions and data can be obtained dynamically, e.g., just in time, when needed for execution. Alternatively, some combination of these ways of obtaining software program code / instructions and data may occur, e.g., for different applications, components, programs, objects, modules, routines, or other sequences of instructions or organization of sequences of instructions, by way of example. Thus, it is not required that data and instructions be on a tangible machine-readable medium 403 in entirety at a particular instance of time.

[0051] In at least one implementation, tangible machine-readable medium 403 includes but is not limited to recordable and non-recordable type media such as volatile and nonvolatile memory devices, read only memory (ROM), random access memory (RAM), flash memory devices, floppy and other removable disks, magnetic storage media, optical storage media (e.g., Compact Disk Read-Only Memory (CD ROMs), Digital Versatile Disks (DVDs), etc.), among others. In at least one implementation, software program code / instructions may be temporarily stored in digital tangible communication links while implementing electrical, optical, acoustical, or other forms of propagating signals, such asDocket No.: 11948-1 WO carrier waves, infrared signals, digital signals, etc., through such tangible communication links.

[0052] In some instances, well-known methods and devices are shown in block diagram form, rather than in detail, to avoid obscuring at least one implementation. Reference throughout this specification to “an implementation,” “one implementation,” “in at least one implementation,” or “some implementations” means that a particular feature, structure, function, or characteristic described in connection with implementation is included in at least one implementation. Thus, appearances of phrase “in an implementation,” “in at least one implementation,” or “in one implementation,” or “some implementations” in various places throughout this specification are not necessarily referring to same implementation of disclosure. Furthermore, particular features, structures, functions, or characteristics may be combined in any suitable manner in one or more implementations. For example, a first implementation may be combined with a second implementation anywhere particular features, structures, functions, or characteristics associated with two implementations are not mutually exclusive.

[0053] As used in herein, singular forms “a.” “an.” and “the” are intended to include plural forms as well, unless context clearly indicates otherwise. It will also be understood that term “and / or” as used herein refers to and encompasses all possible combinations of one or more of associated listed items.

[0054] Here, “coupled” and “connected.” along with their derivatives, may be used herein to describe functional or structural relationships between components. These terms are not intended as synonyms for each other. Rather, in particular implementations, “connected” may be used to indicate that two or more elements are in direct physical, optical, or electrical contact with each other. “Coupled” may be used to indicate that two or more elements are in either direct or indirect (with other intervening elements between them) physical, electrical, or in magnetic contact with each other, and / or that tw o or more elements co-operate or interact with each other (e.g., as in a cause an effect relationship). Coupled may also have the meaning of non-mechanical contact or connection. Coupling may also have the meaning of thermal connectivity, where one object may be a heat source and another object may be a heat sink, either in thermal equilibrium with each other or subject to a common conductive, convective or radiative heat flow' between them; electrically coupled, where objects may be connected electrically in an electric or electronic circuit and a current flow may be induced by application of a voltage between the electrically interconnected objects or by an electric field between mechanically coupled or isolated objects; magnetically, where twoDocket No.: 11948-1 WO mechanically coupled or isolated objects mutually share a common magnetic field flux; and fluidically, where objects such as vessels and conduits may share a common gas or liquid fluid that is static or flowing.

[0055] Here, “over,” “under,” “between,” and “on” as used herein refer to a relative position of one component or material with respect to other components or materials where such physical relationships are noteworthy. For example, in context of materials, one material or material disposed over or under another may be directly in contact or may have one or more intervening materials. Moreover, one material disposed between two materials may be directly in contact with two layers or may have one or more intervening layers. In contrast, a first material “on” a second material is in direct contact with that second material / material. Similar distinctions are to be made in context of component assemblies. As used throughout this description, and in claims, a list of items joined by term “at least one of’ or “one or more of’ can mean any combination of listed terms.

[0056] Here, “adjacent” generally refers to a position of a thing being next to (e.g., immediately next to or close to with one or more things between them) or adjoining another thing (e.g.. abutting it).

[0057] Unless otherwise specified in explicit context of their use, terms “substantially equal,” “about equal,” and “approximately equal” mean that there is no more than incidental variation between two things so described. Such variation is typically no more than + / -10% of a predetermined target value.

[0058] Here, “left,” “right,” “front,” “back,” “top,” “bottom,” “over,” “under,” and similar terms are used for descriptive purposes and not necessarily for describing permanent relative positions. For example, terms “over,” “under,” “front side,” “back side,” “top,” “bottom,” “over,” “under,” and “on” as used herein refer to a relative position of one component, structure, or material with respect to other referenced components, structures, or materials within a device, where such physical relationships are noteworthy. These terms are employed herein for descriptive purposes only and predominantly within context of a device z-axis and therefore may be relative to an orientation of a device. Hence, a first material “over” a second material in context of a figure provided herein may also be “under” second material if device is oriented upside-down relative to context of figure provided. Similar distinctions are to be made in context of component assemblies.

[0059] Here, a device that is “configured to” perform a task or function may be configured (e.g., programmed and / or hardwired) at a time of manufacturing by a manufacturer to perform the function. In at least one example, the device may beDocket No.: 11948-1 WO configurable (or reconfigurable) by a user after manufacturing to perform the function and / or other additional or alternative functions. In at least one example, the configuring may be through firmware and / or software programming of the device, through a construction and / or layout of hardware components and interconnections of the device, or a combination thereof.

[0060] Here, “between” may be employ ed in context of z-axis, x-axis, or y-axis of a device. A material that is between two other materials may be in contact with one or both of those materials. In another example, a material that is between two or other matenal may be separated from both of other two materials by one or more intervening materials. A material “between” two other materials may therefore be in contact with either of other two materials. In another example, a material “between” two other materials may be coupled to other two materials through an intervening material. A device that is between two other devices may be directly connected to one or both of those devices. In another example, a device that is between two other devices may be separated from both of other two devices by one or more intervening devices.

[0061] Here, “showerhead” may generally refer to a process gas distribution device that has a resemblance in appearance and function to a showerhead in a bathroom shower. In at least one implementation, the showerhead comprises a plurality of exit holes for distribution of a process gas in an even manner, generally over a semiconductor substrate within a process chamber.

[0062] Here, “process vacuum chamber” may generally refer to a vacuum chamber configured to enable semiconductor processing, such as film deposition to be carried out in a vacuum environment conditioned for such processing. In at least one implementation, the process vacuum chamber is equipped with a showerhead, pedestal and other equipment designed for semiconductor processing.

[0063] Here, “vacuum fore line,” or simply “fore line,” may generally refer to a large- bore duct or pipe that is coupled to the process vacuum chamber and to which a vacuum pump is coupled. In at least one implementation, the fore line is employed to maintain a high vacuum in the process vacuum chamber.

[0064] Here, “process gas” may generally refer to a gas mixture containing reactive vapors and other gaseous substances, sometimes diluted by an inert carrier gas, which is employed for semiconductor processing. In at least one implementation, a process gas may comprise a nitrogen or argon carrier gas having a precursor vapor that will react in the gas phase or heterogeneously on a wafer surface to form a solid thin film.Docket No.: 11948-1 WO

[0065] Here, “process gas delivery' system” may generally refer to a network of piping or tubing coupled together such that process gases are distributed in a predetermined way by gas delivery components, such as filters, pressure regulators, valves, gas manifolds, etc.

[0066] Here, “multichannel chemistry delivery assembly” may generally refer to process gas delivery7system component comprising an assembly of tubing, passive and active flow control devices, and two or more precursor storage vessels interconnected such that vapors from liquid and solid precursor materials may be entrained by a flow of an inert carrier gas, such as nitrogen, and may be accessed in dedicated outlet channels. Two or more outlet channels may be present for accessing two or more gaseous precursor flows.

[0067] Here “chemistry” is used to describe film deposition material recipes, such as precursors and other substances and their proportions, in conjunction with physical conditions such as pressures, flow rates, and wafer surface temperatures, employed to deposit a particular thin film composition.

[0068] Here, “precursor vessel” may generally refer to a cannister or other suitable vessel for storage of a precursor material. The precursor material may be in a liquid or solid state. Multiple precursor vessels may be included in a process gas delivery system. In this disclosure, multiple precursor vessels are part of the multichannel chemistry delivery' assembly described herein.

[0069] Here, “flow selector valve” may generally refer to a multiport valve that operates in two states, open and closed. In at least one implementation herein, a flow selector valve is a four-port valve. Two ports may be configured as inlets and two ports are outlets. A flow selector valve may be operated as a two-flow selector switch. The flow selector valve may be a diaphragm valve operated in a normally closed state to select one flow, where two pairs of ports are isolated from one another, but the individual ports within each pair are in communication, and in an active open state to select another flow, where all ports are in communication.

[0070] Here, “gas delivery line” may generally refer to a particular portion of tubing piping, referred to as a “line”, which transports, or delivers, gases within the process gas delivery system to the process vacuum chamber. In at least one implementation, the gas delivery line delivers process gases to the showerhead.

[0071] Here, “outlet” may generally refer to a port on a gas handling component where gases exit the component.

[0072] Here, “inlet” may generally refer to a port on a gas handling component where gases enter the component.Docket No.: 11948-1 WO

[0073] Here, “gas manifold’' may generally refer to a type of gas transport line that has multiple inlet and outlet ports.

[0074] Here, “trickle purge” may generally refer to a small flow rate of an inert gas, such as nitrogen, to purge inner passages of the flow selector valves of reactive process gases. When introduced at one inlet port of the flow selector valves, the trickle purge maintains a positive pressure in the passages to mitigate backflow and crosstalk of gases from the gas delivery line from infiltrating into the flow selector valves.

[0075] Here, “trickle purge line” may generally refer to one or more lines within the process gas delivery system that are dedicated to carrying a trickle purge.

[0076] Here, “divert control valve” may generally refer to a valve dedicated to open into a divert line, where process gases may be diverted from flowing in the gas delivery line to a vacuum fore line of the process vacuum chamber.

[0077] Here, “divert line” may generally refer to a line dedicated to diverting process gases to a vacuum fore line for exhausting the process gases.

[0078] Here, “maintenance vacuum line” may generally refer to a line dedicated to maintaining a portion of the process gas delivery system under a specified vacuum.

[0079] Here, “chamber disconnect block” may generally refer to a junction point for coupling lines within the process gas delivery7system to by quick disconnect couplers.

[0080] Here, “heat source” may generally refer to a block heater or tape heater for wrapping around lines within the process gas delivery system.

[0081] Here, “gas conditioning block” may generally refer an oblong rectangular metal (e.g., a stainless-steel alloy) machined block having one or more internal conduits that are bored along the axis of the block, and branches from the internal conduits to apertures on one or two sides of the block for access by gas-flow conditioning components such as valves, filters, pressure regulators, mass flow controllers, etc. In at least one implementation, a gas conditioning block may be a length of steel tubing having multiple branch points for connections to gas handling components.

[0082] Here, “gas box” may generally refer to an enclosure holding one or more gas conditioning blocks, where multiple gases are handled and distributed within the process gas delivery system.

[0083] Here, “plasma gas” may generally refer to inert and reactive gases (e.g., oxygen) employed in the formation and sustaining of plasma.

[0084] Here, “plasma gas source” may generally refer to a pressurized tank holding plasma gas.Docket No.: 11948-1 WO

[0085] Here, “carrier gas” may generally refer to an inert or reactive gas for diluting and transporting reactive gases or precursor vapors.

[0086] Structures of various examples described herein can also be described as method(s) of forming those structures or apparatuses, and method(s) of operation of these structures or apparatuses. The following examples are provided that illustrate the various examples of the disclosure. The examples can be combined with other examples. As such, various examples can be combined with other examples without changing the scope of the invention.

[0087] Example 1 is a process gas delivery apparatus comprising: a multichannel chemistry delivery assembly, comprising a first precursor vessel and a second precursor vessel; a first flow selector valve having a first inlet port coupled to a first outlet channel of the multichannel chemistry delivery assembly, wherein the first precursor vessel is coupled to the first outlet channel; and a second flow selector valve having a second inlet port coupled to a second outlet channel of the multichannel chemistry delivery assembly, wherein the second precursor vessel is coupled to the second outlet channel, wherein a gas delivery line is coupled to a first outlet of the first flow selector valve and is coupled to a second outlet of the second flow selector valve.

[0088] Example 2 is a process gas delivery7apparatus as any of the examples, particularly example 1 , further comprises a trickle purge line coupled to a third inlet port of the first flow selector valve.

[0089] Example 3 is a process gas delivery apparatus as any of the examples, particularly example 2, wherein the trickle purge line is a first trickly purge line, and wherein the process gas delivery7system further comprises a second trickle purge line coupled to a fourth inlet port of the second flow selector valve.

[0090] Example 4 is a process gas delivery apparatus as any of the examples, particularly example 3, wherein a first divert control valve is coupled to a third outlet port of the first flow selector valve, and wherein a second divert control valve is coupled to a fourth outlet port of the second flow selector valve, wherein the first and second divert control valves are coupled to a vacuum fore line of a process vacuum chamber via a first divert line and a second divert line.

[0091] Example 5 is a process gas delivery' apparatus as any of the examples, particularly example 4, wherein the gas delivery line is coupled to a showerhead of the process vacuum chamber at a first end, and wherein the gas delivery line is coupled to one or more gasDocket No.: 11948-1 WO manifolds at a second end, and wherein the one or more gas manifolds are coupled to a gas box.

[0092] Example 6 is a process gas delivery apparatus as any of the examples, particularly example 5, wherein the gas box is a first gas box, and wherein the process gas delivery apparatus comprises a second gas box.

[0093] Example 7 is a process gas delivery apparatus as any of the examples, particularly example 6. wherein the first gas box comprises one or more gas conditioning blocks, wherein the one or more gas conditioning blocks is coupled to the one or more gas manifolds coupled to the gas delivery line.

[0094] Example 8 is a process gas delivery' apparatus as any of the examples, particularly example 7. wherein a first one of the one or more gas conditioning blocks of the first gas box is configured to handle tetramethyl silane, and wherein the one of the one or more gas conditioning blocks is coupled to one of the one or more gas manifolds coupled to the gas delivery' line

[0095] Example 9 is a process gas delivery apparatus as any of the examples, particularly example 8. wherein a second one of the one or more gas conditioning blocks of the first gas box configured to handle the tetramethyl silane is coupled to the vacuum fore line via a third divert line.

[0096] Example 10 is a process gas delivery apparatus as any of the examples, particularly example 6, wherein the second gas box is coupled to an oxygen gas source, an argon gas source, and to a nitrogen source, wherein the oxygen gas source and the argon gas source are coupled to a remote plasma clean source, and wherein the nitrogen source is coupled to the first trickle purge line, the second trickle purge line and to a carrier gas line..

[0097] Example 11 is a process gas delivery apparatus as any of the examples, particularly example 9, wherein a carrier gas line is coupled to the first precursor vessel and to the second precursor vessel within the multichannel chemistry delivery' assembly.

[0098] Example 12 is a process gas delivery apparatus as any of the examples, particularly example 6, wherein the one or more gas manifolds are coupled to a third divert line coupled to the vacuum fore line, and to a fourth divert line coupled to the vacuum fore line.

[0099] Example 13 is a process gas delivery' apparatus as any of the examples, particularly example 5, wherein the first precursor vessel is coupled to a first maintenance vacuum line, and the second precursor vessel is coupled to a second maintenance vacuum line.Docket No.: 11948-1 WO

[0100] Example 14 is a process gas delivery apparatus as any of the examples, particularly example 13, wherein the first maintenance vacuum line and the second maintenance vacuum line are coupled to the vacuum fore line.

[0101] Example 15 is a process gas delivery' apparatus as any of the examples, particularly example 14 wherein the first divert line and the second divert line are coupled to the vacuum fore line via a first chamber disconnect block.

[0102] Example 16 is a process gas delivery apparatus as any of the examples, particularly example 15, wherein the one or more gas manifolds are coupled to the first gas box via a second chamber disconnect block.

[0103] Example 17 is a process gas delivery apparatus as any of the examples, particularly example 1, wherein the first flow selector valve and the second flow selector valve are coupled to a heat source.

[0104] Example 18 is a process gas delivery' system comprising: a multichannel chemistry' delivery assembly, comprising a first precursor vessel and a second precursor vessel; a first flow selector valve having a first inlet port coupled to a first outlet channel of the multichannel chemistry' delivery assembly, wherein the first precursor vessel is coupled to the first outlet channel; and a second flow selector valve having a second inlet port coupled to a second outlet channel of the multichannel chemistry' delivery' assembly, wherein the second precursor vessel is coupled to the second outlet channel, wherein a gas delivery line is coupled to a first outlet of the first flow selector valve and is coupled to a second outlet of the second flow selector valve, a showerhead coupled to the gas delivery line; and a gas box coupled to the gas delivery' line, wherein the gas box is coupled to one or process gas sources.

[0105] Example 19 is a process gas delivery system as in any of the examples, particularly example 18, further comprising comprises a first trickle purge line coupled to a third inlet port of the first flow selector valve and a second trickle purge line coupled to a fourth inlet port of the second flow selector valve.

[0106] Example 20 is a method for operating a process gas delivery' system, comprising: flowing a carrier gas to a multichannel chemistry delivery assembly comprising a first precursor vessel and a second precursor vessel, wherein the carrier gas flows into the first precursor vessel and into the second precursor vessel, and wherein the process gas delivery' system comprises: a first flow selector valve having a first inlet port coupled to a first outlet channel of the multichannel chemistry delivery assembly; a second flow selector valve having a second inlet port coupled to a second outlet channel of the multichannel chemistry delivery assembly; a gas delivery line coupled to a first outlet of the first flow selector valveDocket No.: 11948-1 WO and coupled to a second outlet of the second flow selector valve; a first trickle purge line coupled to a third inlet port of the first flow selector valve; and a second trickle purge line coupled to a fourth inlet port of the second flow selector valve; flowing a trickle purge in the first trickle purge line and in the second trickle purge line, wherein the trickle purge imposes a pressure on the third inlet port of the first flow selector valve and on the fourth inlet port of the second flow selector valve; flowing a first precursor feed from the first outlet channel of the multichannel chemistry delivery assembly to the first inlet port of the first flow selector valve; and flowing a second precursor feed from the second outlet channel of the multichannel chemi stry delivery7assembly to the second inlet port of the second flow selector valve.

[0107] Example 21 is a method as in any of the examples, particularly example 20 wherein flowing the first precursor feed from the first outlet channel to the first inlet port of the first flow selector valve includes closing a first divert control valve and opening a second divert control valve.

[0108] Example 22 is a method as in any of the examples, particularly example 21, wherein flowing the second precursor feed from the second outlet channel of the multichannel chemistry delivery assembly to the second inlet port of the second flow selector valve includes opening the first divert control valve and closing the second divert control valve, and wherein the second precursor feed flows into the gas delivery line.

[0109] Example 23 is a method as in any of the examples, particularly example 21, wherein opening the first divert control valve and closing the second divert control valve is performed after closing the first divert control valve and opening the second divert control valve and performing a deposition process step within a process vacuum chamber.

[0110] Example 24 is a method as in any of the examples, particularly example 23, wherein flowing the trickle purge in the first trickle purge line and in the second trickle purge line comprises opening the first divert control valve and the second divert control valve, and directing the trickle purge to flow7to the gas delivery7line through the first outlet port and the second outlet port of the first flow selector valve and the second flow selector valve, respectively, and wherein the first precursor feed and the second precursor feed are directed to a vacuum fore line.

Claims

Docket No.: 11948-1 WOCLAIMSWhat is claimed is:

1. A process gas delivery apparatus, comprising: a multichannel chemistry deliver}' assembly, comprising a first precursor vessel and a second precursor vessel; a first flow selector valve having a first inlet port coupled to a first outlet channel of the multichannel chemistry delivery assembly, wherein the first precursor vessel is coupled to the first outlet channel; and a second flow selector valve having a second inlet port coupled to a second outlet channel of the multichannel chemistry delivery assembly, wherein the second precursor vessel is coupled to the second outlet channel, and wherein a gas delivery' line is coupled to a first outlet of the first flow selector valve and is coupled to a second outlet of the second flow selector valve.

2. The process gas delivery^ apparatus of claim 1, further comprising a trickle purge line coupled to a third inlet port of the first flow selector valve.

3. The process gas delivery apparatus of claim 2. wherein the trickle purge line is a first trickle purge line, and wherein the process gas delivery apparatus further comprises a second trickle purge line coupled to a fourth inlet port of the second flow selector valve.

4. The process gas delivery apparatus of claim 3. wherein a first divert control valve is coupled to a third outlet port of the first flow selector valve, and wherein a second divert control valve is coupled to a fourth outlet port of the second flow selector valve, and wherein the first divert control valve and the second divert control valve are coupled to a vacuum fore line of a process vacuum chamber via a first divert line and a second divert line.

5. The process gas delivery' apparatus of claim 4, wherein the gas delivery' line is coupled to a showerhead of the process vacuum chamber at a first end, and wherein the gas delivery line is coupled to one or more gas manifolds at a second end, and wherein the one or more gas manifolds are coupled to a gas box.Docket No.: 11948-1 WO6. The process gas delivery apparatus of claim 5. wherein the gas box is a first gas box, and wherein the process gas delivery apparatus comprises a second gas box.

7. The process gas delivery apparatus of claim 6, wherein the first gas box comprises one or more gas conditioning blocks, and wherein the one or more gas conditioning blocks is coupled to the one or more gas manifolds coupled to the gas delivery line.

8. The process gas delivery' apparatus of claim 7, wherein a first one of the one or more gas conditioning blocks of the first gas box is configured to handle tetramethyl silane, and wherein one of the one or more gas conditioning blocks is coupled to one of the one or more gas manifolds coupled to the gas delivery line.

9. The process gas delivery apparatus of claim 8. wherein a second one of the one or more gas conditioning blocks of the first gas box configured to handle the tetramethyl silane is coupled to the vacuum fore line via a third divert line.

10. The process gas delivery' apparatus of claim 6, wherein the second gas box is coupled to a first gas source, a second gas source, and to a third gas source, wherein the second gas source and the third gas source are coupled to a remote plasma clean source, and wherein the first gas source is coupled to the first trickle purge line, to the second trickle purge line, and to a carrier gas line.

11. The process gas delivery apparatus of claim 9, wherein a carrier gas line is coupled to the first precursor vessel and to the second precursor vessel within the multichannel chemistry' delivery assembly.

12. The process gas delivery apparatus of claim 6, wherein the one or more gas manifolds are coupled to a third divert line coupled to the vacuum fore line, and to a fourth divert line coupled to the vacuum fore line.

13. The process gas delivery apparatus of claim 5. wherein the first precursor vessel is coupled to a first maintenance vacuum line, and the second precursor vessel is coupled to a second maintenance vacuum line.Docket No.: 11948-1 WO14. The process gas delivery apparatus of claim 13, wherein the first maintenance vacuum line and the second maintenance vacuum line are coupled to the vacuum fore line.

15. The process gas delivery apparatus of claim 14, wherein the first divert line and the second divert line are coupled to the vacuum fore line via a first chamber disconnect block.

16. The process gas delivery' apparatus of claim 15, wherein the one or more gas manifolds are coupled to the gas box via a second chamber disconnect block.

17. The process gas delivery apparatus of claim 1, wherein the first flow selector valve and the second flow selector valve are coupled to a heat source.

18. A process gas delivery system, comprising: a multichannel chemistry delivery' assembly, comprising a first precursor vessel and a second precursor vessel; a first flow selector valve having a first inlet port coupled to a first outlet channel of the multichannel chemistry delivery assembly, wherein the first precursor vessel is coupled to the first outlet channel; a second flow selector valve having a second inlet port coupled to a second outlet channel of the multichannel chemistry' delivery' assembly, wherein the second precursor vessel is coupled to the second outlet channel, wherein a gas delivery line is coupled to a first outlet of the first flow selector valve and is coupled to a second outlet of the second flow selector valve; a showerhead coupled to the gas delivery' line; and a gas box coupled to the gas delivery line, wherein the gas box is coupled to one or process gas sources.

19. The process gas delivery system of claim 18, further comprising comprises a first trickle purge line coupled to a third inlet port of the first flow selector valve, and a second trickle purge line coupled to a fourth inlet port of the second flow selector valve.

20. A method for operating a process gas delivery system, comprising:Docket No.: 11948-1 WO flowing a carrier gas to a multichannel chemistry delivery assembly comprising a first precursor vessel and a second precursor vessel, wherein the earner gas flows into the first precursor vessel and into the second precursor vessel, and wherein the process gas delivery system comprises: a first flow selector valve having a first inlet port coupled to a first outlet channel of the multichannel chemistry delivery assembly; a second flow selector valve having a second inlet port coupled to a second outlet channel of the multichannel chemistry delivery assembly; a gas delivery' line coupled to a first outlet of the first flow selector valve and coupled to a second outlet of the second flow selector valve; a first trickle purge line coupled to a third inlet port of the first flow selector valve; and a second trickle purge line coupled to a fourth inlet port of the second flow selector valve; flowing a trickle purge in the first trickle purge line and in the second trickle purge line, wherein the trickle purge imposes a pressure on the third inlet port of the first flow selector valve and on the fourth inlet port of the second flow selector valve; flowing a first precursor feed from the first outlet channel of the multichannel chemistry delivery assembly to the first inlet port of the first flow selector valve; and flowing a second precursor feed from the second outlet channel of the multichannel chemistry delivery assembly to the second inlet port of the second flow selector valve.

21. The method of claim 20, wherein flowing the first precursor feed from the first outlet channel to the first inlet port of the first flow selector valve includes closing a first divert control valve and opening a second divert control valve.

22. The method of claim 21, wherein flowing the second precursor feed from the second outlet channel of the multichannel chemistry delivery assembly to the second inlet port of the second flow selector valve includes opening the first divert control valve and closing the second divert control valve, and wherein the second precursor feed flows into the gas delivery line.Docket No.: 11948-1 WO23. The method of claim 21, wherein opening the first divert control valve and closing the second divert control valve is performed after closing the first divert control valve and opening the second divert control valve and performing a deposition process step within a process vacuum chamber.

24. The method of claim 23. wherein flowing the trickle purge in the first trickle purge line and in the second trickle purge line comprises opening the first divert control valve, and the second divert control valve, and directing the trickle purge to flow to the gas delivery' line through the first outlet and the second outlet of the first flow selector valve and the second flow selector valve, respectively, and wherein the first precursor feed and the second precursor feed are directed to a vacuum fore line.

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