Improved pump efficiency for substrate processing systems

Abstract

A substrate processing system includes a reactor configured to perform at least one substrate processing operation, at least one exhaust pipe connected between the reactor and at least one exhaust port, and a pump assembly configured to pump gas out of the reactor and through the at least one exhaust pipe to the at least one exhaust port. The pump assembly includes at least one motor, and the at least one motor is at least one of a switched reluctance motor or synchronous reluctance motor.

Description

Attorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POAIMPROVED PUMP EFFICIENCY FOR SUBSTRATE PROCESSING SYSTEMSCROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 696,004, filed on September 18, 2024, and U.S. Provisional Application No. 63 / 696,772, filed on September 19, 2024. The entire disclosures of the applications referenced above are incorporated herein by reference.FIELD

[0002] The present disclosure relates to improved pump efficiency designs for substrate processing systems.BACKGROUND

[0003] The background description provided here is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.

[0004] Substrate processing systems perform treatments on substrates such as semiconductor wafers. Examples of substrate treatments include deposition, ashing, etching, cleaning and / or other processes. Process gas mixtures may be supplied to the processing chamber to treat the substrate. Plasma may be used to ignite the gases to enhance chemical reactions.SUMMARY

[0005] An example substrate processing system includes a reactor configured to perform at least one substrate processing operation, at least one exhaust pipe connected between the reactor and at least one exhaust port, and a pump assembly configured to pump gas out of the reactor and through the at least one exhaust pipe to the at least one exhaust port, wherein, the pump assembly includes at least one motor, and the at least one motor is at least one of a switched reluctance motor or synchronous reluctance motor.Attorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA

[0006] In some examples, the at least one motor is the switched reluctance motor. In some examples, the at least one motor is the synchronous reluctance motor.

[0007] In some examples, the reactor is a sub-atmospheric reactor. In some examples, the reactor is a super-atmospheric reactor.

[0008] In some examples, the system includes a source configured to supply a combination of inert gas and hazardous process materials (HPMs) to the pump assembly.

[0009] An substrate processing system includes a reactor configured to perform at least one substrate processing operation, at least one exhaust pipe connected between the reactor and at least one exhaust port, and a pump assembly configured to pump gas out of the reactor and through the at least one exhaust pipe to the at least one exhaust port, wherein the pump assembly includes multiple pump stages configured to operate with a variable compression ratio.

[0010] In some examples, the pump assembly includes a first pump stage configured to pump gas through the at least one exhaust pipe to the at least one exhaust port, a second pump stage configured to pump gas through the at least one exhaust pipe to the at least one exhaust port, at least one motor configured to drive the first pump stage and the second pump stage, a first clutch coupled between the at least one motor and the first pump stage, and a second clutch coupled between the at least one motor and the second pump stage, wherein the first clutch and the second clutch facilitate operating the pump assembly with a variable compression ratio.

[0011] In some examples, the pump assembly includes a first pump stage configured to pump gas through the at least one exhaust pipe to the at least one exhaust port, a second pump stage configured to pump gas through the at least one exhaust pipe to the at least one exhaust port, at least one motor configured to drive the first pump stage and the second pump stage, a first torque converter coupled between the at least one motor and the first pump stage, and a second torque converter coupled between the at least one motor and the second pump stage, wherein the first torque converter and the second torque converter facilitate operating the pump assembly with a variable compression ratio.

[0012] In some examples, the pump assembly includes multiple pump stages configured to pump gas through the at least one exhaust pipe to the at least one exhaust port, and a single motor configured to drive the multiple pump stages.Attorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA

[0013] In some examples, the pump assembly includes a first motor and a second motor, a first pump stage of the multiple pump stages is coupled with the first motor, and is configured to pump gas through the at least one exhaust pipe to the at least one exhaust port, and a second pump stage of the multiple pump stages is coupled with the second motor, and is configured to pump gas through the at least one exhaust pipe to the at least one exhaust port.

[0014] In some examples, the first motor is configured to operate the first pump stage at a first speed, and the second motor is configured to operate the second pump stage at a second speed which is different than the first speed.

[0015] In some examples, the pump assembly includes at least one motor, and the at least one motor is at least one of a switched reluctance motor or synchronous reluctance motor.

[0016] In some examples, the at least one motor is the switched reluctance motor. In some examples, the at least one motor is the synchronous reluctance motor.

[0017] In some examples, the reactor is a sub-atmospheric reactor. In some examples, the reactor is a super-atmospheric reactor.

[0018] In some examples, the system includes a gas source configured to supply a combination of inert gas and hazardous process materials (HPMs) to the pump assembly.

[0019] In some examples, the multiple pump stages are configured to operate with the variable compression ratio by spinning the multiple pump stages as a set at different speeds.

[0020] In some examples, the multiple pump stages are configured to operate with the variable compression ratio by varying a spin speed of different combination of pump stages using multiple motors.

[0021] In some examples, the multiple pump stages are configured to operate with the variable compression ratio by varying a number of pump stages spinning at one time using one or more clutches.

[0022] In some examples, the system includes a controller, and a sensor configured to sense a gas load of the substrate processing system, wherein the controller is configured to control a pumping speed of the pump assembly based on the sensed gas load.Attorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA

[0023] In some examples, the system includes a controller configured to receive an external control input, wherein the controller is configured to control a pumping speed of the pump assembly based on the external control input.

[0024] An example substrate processing system includes a reactor configured to perform at least one substrate processing operation, at least one exhaust pipe connected between the reactor and at least one exhaust port, and a pump assembly configured to pump gas out of the reactor and through the at least one exhaust pipe to the at least one exhaust port, a servo coupled with the pump assembly, and a system controller configured to control the servo to generate a variable ballast flow to the pump assembly.

[0025] In some examples, the system controller is configured to control the servo to generate the variable ballast flow to optimize a throughput-pressure curve for pumping gas though the at least one exhaust pipe to the at least one exhaust port.

[0026] In some examples, the pump assembly includes at least one motor, and the at least one motor is at least one of a switched reluctance motor or synchronous reluctance motor.

[0027] In some examples, the at least one motor is the switched reluctance motor. In some examples, the at least one motor is the synchronous reluctance motor.

[0028] In some examples, the reactor is a sub-atmospheric reactor. In some examples, the reactor is a super-atmospheric reactor.

[0029] In some examples, the system includes a gas source configured to supply a combination of inert gas and hazardous process materials (HPMs) to the pump assembly.

[0030] An example substrate processing system includes a reactor configured to perform at least one substrate processing operation, at least one exhaust pipe connected between the reactor and at least one exhaust port, and a pump assembly configured to pump gas out of the reactor and through the at least one exhaust pipe to the at least one exhaust port, wherein the pump assembly includes, at least one motor, and a transmission coupled between the at least one motor and one or more pump stages of the pump assembly.

[0031] In some examples, the transmission is configured to turn on and off discretely using a clutch. In some examples, the transmission is configured to drive the one or more pump stages at discretely different speeds.Attorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA

[0032] In some examples, the transmission is a continuously variable transmission (CVT) configured to drive the one or more pump stages at continuously different speeds.

[0033] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims and the drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure.BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0035] FIG. 1 is a functional block diagram of an example substrate processing system according to the present disclosure;

[0036] FIG. 2 is a functional block diagram illustrating an example substrate processing system including an exhaust pipe and a gas source, according to the present disclosure;

[0037] FIG. 3 is a functional block diagram illustrating an example substrate processing system including a servo to control variable ballast flow, according to the present disclosure;

[0038] FIG. 4 is a functional block diagram illustrating an example substrate processing system including clutches for multiple pump stages, according to the present disclosure;

[0039] FIG. 5 is a functional block diagram illustrating an example substrate processing system including independent motors for multiple pump stages, according to the present disclosure; and

[0040] FIG. 6 is a functional block diagram illustrating an example substrate processing system including a switched reluctance or synchronous reluctance motor, according to the present disclosure.

[0041] In the drawings, reference numbers may be reused to identify similar and / or identical elements.DETAILED DESCRIPTION

[0042] During substrate processing, a substrate is arranged on a pedestal such as an electrostatic chuck (ESC), process gases are supplied, and plasma is struck in the processing chamber. Exposed surfaces of components within the processing chamberAttorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA experience wear due to exposure to the plasma, and reactants and other deposition process byproducts may be generated or released within the processing chamber. These reactants and other deposition process byproducts may be evacuated from the processing chamber, such as via a chamber dry pump.

[0043] It is desirable to reduce environmental impact semiconductor capital equipment industry is pressured to reduce environmental impact. For example, SEMI S23 and other standards seek to standardize measurement and reporting of various environmental impact factors such as carbon footprint. In order to reach environmental, social and governance (ESG) goals, significant contributions from semiconductor processing equipment and peripheral products may be redesigned. For example, for many deposition product group (DPG) products, the chamber dry pump (e.g., a sub-fabrication peripheral), may be a greatest contributor to total equipment electrical consumption.

[0044] Improving efficiency of the chamber dry pumps may have a significant effect on improved efficiency of the semiconductor processing system. Described herein are various example embodiments of designs for improvising efficiency of chamber dry pumps, such as by using variable ballast flow to optimize a throughput-pressure curve, increasing a number of main pump stages with a variable compression ratio, and implementation of other motor technologies.

[0045] Chamber dry pumps may be located far from semiconductor processing equipment, and may pump reactants or other semiconductor processing byproducts through long fore lines. The fore lines may be, for example, between four and six inches in diameter and between 30 and 100 feet long, although other example embodiments may have greater or lesser diameters or lengths.

[0046] Various pumping technologies may be employed for chamber dry pumps, such as a dual axis, counter rotating turbo machine incorporating a roots style or screw style, multi-stage compression design, utilizing a single motor. A ballast flow of inert gas may be incorporated into the exhaust gas stream to reduce concentrations of condensable products. Another function of the ballast flow may be to force some degree of selfheating, due to the compression of additional gas. In some examples, alternating current (AC) induction motor technology is employed to provide low cost and high power. Pumps may be designed for steady flow, although actual operation may be very dynamic, and there may be advantages in designing the pumps for transient flow operation (e.g., to improve pump efficiency).Attorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA

[0047] For example, pump efficiency may be dependent on pressure and flow. In some examples, the system is configured to servo a ballast flow to an optimal value to enhance or maximize pumping efficiency. In another example, a clutch mechanism may be used such that the number of pumping stages can be varied based on the amount of compression needed, rather than operating only with a fixed number of stages.

[0048] Alternatively, or in addition, to using a clutch, clusters of compression stages may be operated by independent motors, or with a single motor with a transmission in between that can operate at different speeds. In some examples, incorporation of emerging disruptive motor technology such as switched reluctance motors or synchronous reluctance motors may improve pump efficiency by reducing loss in the windings or eddy current or loss in magnetic flux.

[0049] Various example embodiments described herein may significantly improve chamber dry pump pumping efficiency and reduce time averaged electrical power draw. For example, applying a servo to ballast flow may improve or optimize the operating point on the power efficiency. Varying the number of pump stages may improve or optimize the compression ratio and mechanical losses for the volumetric throughput needed. Use of disruptive motor technology (such as switched reluctance motors or synchronous reluctance motors), may reduce electrical and magnetic losses in the constantly running motors to optimize the torque needed as the load varies.

[0050] Referring now to FIG. 1 , an example of a substrate processing system 100 that performs plasma processing according to certain embodiments of the present disclosure is shown. While a specific type of plasma processing chamber is shown, other plasma processing chambers can be used. For example, the substate processing system 100 may include any suitable reactor (such as a processing chamber), which may be sub- atmospheric or super-atmospheric. A sub-atmospheric reactor may refer to a reactor where a pressure of air and / or other gases within the reactor is less than atmospheric pressure (e.g., 14.7 pounds per square inch). The sub-atmospheric reactor may include an interior space that is maintained as a vacuum in some examples. A super-atmospheric reactor may refer to a reactor where a pressure of air and / or other gases within the reactor is greater than atmospheric pressure, such as 1 .5 times atmospheric pressure, double the atmospheric pressure, three times the atmospheric pressure, ten times the atmospheric pressure, or higher. In some examples, sub-atmospheric pressure andAttorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA super-atmospheric pressure may be based on atmospheric pressure values other than 14.7 pounds per square inch.

[0051] The substrate processing system 100 includes a coil driving circuit 104. In some examples, the coil driving circuit 104 includes an RF source 108, a pulsing circuit 1 12, and a tuning circuit 1 14. The pulsing circuit 1 12 controls a TCP envelope of the RF signal and varies a duty cycle of the TCP envelope (e.g., between 1 % and 99%) during operation. As can be appreciated, the pulsing circuit 1 12 and the RF source 108 can be combined or separate.

[0052] The tuning circuit 1 14 may be directly connected to one or more inductive coils 1 16. The tuning circuit 1 14 tunes an output of the RF source 108 to a desired frequency and / or a desired phase, matches an impedance of the coils 1 16 and / or splits power between the coils 116. While examples including multiple coils are shown, a single coil including a single conductor or multiple conductors can be used.

[0053] A dielectric window 120 is arranged along one side of a processing chamber 122. The processing chamber 122 further comprises a substrate support (or pedestal) 124 to support a substrate 128. The substrate support 124 may include an electrostatic chuck (ESC), a mechanical chuck or other type of chuck. Process gas is supplied to the processing chamber 122 and plasma 132 is generated inside of the processing chamber 122. An RF bias drive circuit 136 may be used to supply an RF bias to the substrate support 124 during operation to control ion energy. The RF bias drive circuit 136 may include an RF source and an impedance matching circuit (not shown).

[0054] In some embodiments, a plenum 140 is arranged adjacent to (e.g., above, as shown) the dielectric window 120. A gas delivery system 144 may be used to deliver gas from a gas source 146 via a valve 148 to the plenum 140. The gas may include cooling gas (air) that is used to cool the coils 1 16 and the dielectric window 120.

[0055] A gas delivery system 156 may be used to supply a process gas mixture to the processing chamber 122. The gas delivery system 156 may include gas sources 158 (e.g., precursor, vapor, one or more other gases, inert gases), a gas metering system 160 such as valves and mass flow controllers, and a manifold 162. A gas injector (not shown) may be arranged at a center of the dielectric window 120 (or other location) and is used to inject gas mixtures from the gas delivery system 156 into the processing chamber 122.Attorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA

[0056] A heater / cooler 164 may be used to heat / cool the substrate support 124 to a predetermined temperature. An exhaust system 166 includes a valve 168 and pump 170 to control pressure in the processing chamber 122 and / or to remove reactants from the processing chamber 122 by purging or evacuation. Further details of example pump systems (such as a chamber dry pump) for purging or evacuating the processing chamber 122 are described further below.

[0057] A system controller 172 may be used to control the process. The system controller 172 monitors system parameters and controls delivery of the gas mixtures, striking, maintaining and extinguishing the plasma, removal of reactants, supply of cooling gas, etc.

[0058] The substrate support 124 may include an edge ring system including an edge ring 174. As shown, the edge ring 174 is arranged above a bottom ring 176. The edge ring 174, according to the present disclosure, is configured to protect the bottom ring 176 from exposure to the plasma processing environment as described below in more detail. For example, the edge ring 174 extends from an inner diameter of the bottom ring 176 past an outer diameter of the bottom ring 176. In an embodiment, an outer diameter of the edge ring 174 extends to and interfaces with a chamber liner (not shown in FIG. 1 ).

[0059] In certain embodiments, the system controller 172 controls a robot 180 to deliver substrates and / or edge rings to the processing chamber. The system controller 172 also controls one or more actuators 182 that move lift pins (not shown in FIG. 1 ) to selectively raise and lower the edge ring 174 to facilitate transfer of the edge ring 174 to and from the substrate support 124. The system controller 172 may also receive outputs from one or more sensors 184 that are used to sense a height of the edge rings. Non-limiting examples of sensors include optical sensors, physical sensors, piezo sensors, ultrasonic sensors, etc.

[0060] Referring now to FIG. 2 is a functional block diagram illustrating an example substrate processing system 200 including an exhaust pipe and a gas source, according to the present disclosure. As shown in FIG. 2, an exhaust system 166 includes a valve 168 and pump 170 to control pressure in the processing chamber 122 and / or to remove reactants from the processing chamber 122 by purging or evacuation.

[0061] For example, the pump 170 may be a chamber dry pump configured to remove reactants or other semiconductor processing by products from the processing chamber 122. Any suitable pump design may be used, such as a dual axis, counter rotating turboAttorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA machine incorporating a roots style or screw style, multi-stage compression design, utilizing one or more motors. In some examples, alternating current (AC) induction motor technology is employed to provide low cost and high power. The pump 170 may be designed for steady flow, or for transient flow operation (e.g., to improve pump efficiency).

[0062] One or more exhaust pipes 202 are connected between the pump 170 and one or more exhaust ports 204. For example, the exhaust pipes 202 may include fore lines that have a diameter between four and six inches (or larger or smaller), and a length between thirty and one-hundred feet (or longer or shorter). The exhaust port(s) 204 may be located at an exterior of a building, of a processing space or room, etc., to dispose of the harmful gases pumped out of the system.

[0063] As shown in FIG. 2, one or more optional pump(s) 210 may be coupled with the exhaust pipe(s) 202. The optional pump(s) 210 may be located at a start of the exhaust pipe(s) 202, or any suitable location along the length of the exhaust pipe(s) 202. The pump 170 and the optional pump(s) 210 may include on or more stages to pump gases through the exhaust pipe(s) 202.

[0064] A gas source 208 may optionally be coupled to supply a ballast flow via the pump 170 and / or the optional pump(s) 210. For example, a ballast flow of inert gas (or a combination of inert gas and hazardous process materials (HPMs) such as flammables, pyrophoric, toxics, and process byproducts produced by the process) may be incorporated into the exhaust gas stream to reduce concentrations of condensable products. The ballast flow may force some degree of self-heating, due to the compression of additional gas. The system controller 172 is configured to control the pump 170, the gas source 208, and the optional pump(s) 210, to control the supply of ballast flow via the pump 170 and / or the optional pump(s) 210.

[0065] In some examples, exhaust gases such as the process gas, the cleaning gas or the like may contain a silane-based gas (SiFk, TEOS or the like), a halogen-based gas (NF3, CIF3, SFe, CHF3 or the like), a PFC gas (CF4, C2F6 or the like) or the like, and such exhaust gases have negative effects on human bodies and on the global environment such as global warming. Therefore, these exhaust gases may be made harmless by an exhaust gas treatment apparatus provided at a downstream side of the vacuum pump, and the harmless exhaust gases emitted to the atmosphere.

[0066] For example, the exhaust pipe(s) 202 and / or exhaust port(2) 204 may be connected to an exhaust gas treatment apparatuses to treat the exhaust gas to anAttorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA allowable concentration or smaller. A process apparatus may include one or more process chambers, one or more dry vacuum pumps connected to each process chamber, and respective exhaust lines of the dry vacuum pumps are connected to the exhaust gas treatment apparatus. Since the respective plural process chambers may differ in recipes, the kinds of gases to be used and the timing of inflow of the gas may differ in the respective process chambers.

[0067] In some examples, a large exhaust gas treatment apparatus is installed at a place apart from the dry vacuum pump by a certain distance due to limitations of the installation place in the factory. In a process in which a product is generated, if an exhaust line is long, the product is liable to accumulate. The accumulation of the product may increase back pressure of the dry vacuum pump and cause pump trouble.

[0068] In order to suppress generation of sublimation product, a heater may be installed on a pipe of the exhaust line. For example, a jacket-type heater may be installed, which has a heater coil therein. The monitoring of the temperature necessary for controlling the heater may be performed by a thermocouple provided on the heater coil, or on a surface of a piece of an object to be heated. When the heater is installed on a long pipe, segmentation of the heater may be used to make the temperature distribution uniform.

[0069] The dry vacuum pumps for exhausting the process chamber and the exhaust gas treatment apparatus may be individually controlled. For example, on and off operation, switching of a combustion mode, interlock and the like may be performed by exchanging signals individually between the dry vacuum pump and the manufacturing apparatus, and between the exhaust gas treatment apparatus and the manufacturing apparatus. Accordingly, input and output signals may be controlled with respect to each of the dry vacuum pump and the exhaust gas treatment apparatus. Further, the monitoring of the dry vacuum pump and the exhaust gas treatment apparatus may be performed individually to control the operations of the dry vacuum pump and the exhaust gas treatment apparatus.

[0070] FIG. 3 is a functional block diagram illustrating an example substrate processing system 300 including a servo to control variable ballast flow, according to the present disclosure. As shown in FIG. 3, a variable ballast flow servo 312 is coupled between the inert gas source and the pump 170 and the optional pump(s) 210.

[0071] The system controller 172 is configured to control the variable ballast flow servo to control an amount of inert gas supplied to the pump 170 and / or the optional pump(s)Attorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA210. For example, pump efficiency may be dependent on pressure and flow. In some examples, the system is configured to servo a ballast flow to an optimal value to enhance or maximize pumping efficiency.

[0072] FIG. 4 is a functional block diagram illustrating an example substrate processing system 400 including clutches for multiple pump stages, according to the present disclosure. As shown in FIG. 4, a pump receives an inlet flow 402, and supplies an outlet flow 404. An inert gas source 424, such as hot nitrogen, may be supplied to the pump in some examples.

[0073] The pump includes a first pump stage 408, a second pump stage 410, a third pump stage 412, and a fourth pump stage 414. A motor 406 is configured to drive the first pump stage 408, the second pump stage 410, the third pump stage 412, and the fourth pump stage 414. For example, each pump stage may be driven by a same single pump motor.

[0074] As shown in FIG. 4, the pump includes multiple clutches. For example, a first clutch 416 is coupled with the first pump stage 408, a second clutch 418 is coupled with the second pump stage 410, a third clutch 420 is coupled with the third pump stage 412, and a fourth clutch 422 is coupled with the fourth pump stage 414. Although FIG. 4 illustrates one motor driving four pumping stages with four clutches, other example embodiments may include more or less motors, pumping stages and clutches, with other suitable connection arrangements between components.

[0075] The clutches may allow the motor 406 to selectively drive different numbers of the pumping stages based on a desired amount of compression. For example, the clutch mechanism(s) may be used such that the number of pumping stages can be varied based on the amount of compression needed, rather than operating only with a fixed number of stages. In some examples, the compression ratio may be varied by changing the number of pump stages spinning at one time using one or more clutches. In other examples, the compression ratio may be varied by spinning multiple pump stages together at different speeds as a set, or varying the spin speed of different combinations of stages (e.g., using multiple motors), as described further below. In the example of discretely different speeds, a torque converter may be employed.

[0076] FIG. 5 is a functional block diagram illustrating an example substrate processing system 500 including independent motors for multiple pump stages, according to the present disclosure. As shown in FIG. 5, a pump receives an inlet flow 502, and suppliesAttorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA an outlet flow 504. An inert gas source 524, such as hot nitrogen, may be supplied to the pump in some examples.

[0077] The pump includes a first motor 506 and a second motor 526. The first motor 506 and the second motor 526 may be configured to operate independently of one another. For example, a system controller may control the first motor 506 and the second motor 526 to operate at different speeds.

[0078] The first motor 506 is configured to drive a first pumping stage 510, and the second motor 526 is configured to drive a second pumping stage 512. In this manner, the first motor 506 and the second motor 526 may operate the first pumping stage 510 and the second pumping stage 512 at different speeds. Although FIG. 4 illustrates one motor driving two pumping stages and two motors, other example embodiments may include more or less motors and pumping stages, with other suitable connection arrangements between components.

[0079] In some examples, as an alternative or addition to using a clutch, clusters of compression stages may be operated by independent motors, or with a single motor with a transmission in between that can operate at different speeds. For example, the transmission may be configured to turn on and turn off discretely (e.g., using a clutch), to drive one or more pump stages at discretely different speeds, or to drive the one or more pump stages at continuously different speeds (e.g., via a continuously variable transmission such a planetary gear system with a variable ring gear speed). In some examples, there may be one motor driving a main shaft with one or more stages permanently coupled to it, and one or more stages variably coupled to it with the aforementioned transmission options. Alternatively, the transmission can be replaced with one or more independent motors. In various implementations, each motor may be coupled with a transmission between it and the stages that the motor drives, if that improves the dynamic performance of the arrangement.

[0080] In some examples, variable pumps may be adjusted based on how much pump out is needed for, e.g., dangerous combustible gases from the processing chamber. The amount of variable pumping needed may be based on sensors (e.g., detecting an amount or pressure of exhaust gases present or being generated), based on a time in the process (e.g., due to knowledge of when most exhaust gases will be generated and need to be exhausted), etc. Some systems may be configured to activate variable pumping ahead of anticipated pumping need, to avoid risking buildup of gases before pump is ready.Attorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA

[0081] For example, the substate processing system may include a controller, and a sensor configured to sense a gas load of the substrate processing system. The controller may be configured to control a pumping speed of the pump assembly based on the sensed gas load. As another example, the controller may be configured to receive an external control input, and control a pumping speed of the pump assembly based on the external control input.

[0082] FIG. 6 is a functional block diagram illustrating an example substrate processing system 600 including a switched reluctance or synchronous reluctance motor, according to the present disclosure. As shown in FIG. 6, a switched reluctance or synchronous reluctance pump 612 is connected between the valve 168 and the exhaust pipe(s) 202.

[0083] The system controller 172 is configured to control operation of the switched reluctance or synchronous reluctance pump 612, to evacuate the reactants or other substrate processing byproducts from the processing chamber 122. The gas source 208 may optionally be configured to supply ballast flow via the switched reluctance or synchronous reluctance pump 612.

[0084] In some examples, incorporation of emerging disruptive motor technology such as switched reluctance motors or synchronous reluctance motors may improve pump efficiency by reducing loss in the windings or eddy current or loss in magnetic flux. The switched reluctance or synchronous reluctance pump 612 of FIG. 6 may operate similar to the pump 170 of FIG. 2 to drive exhaust gases through the exhaust pipe(s) 202 to the exhaust port(s) 204, but with improved efficiency.

[0085] Unlike brushed DC motors, power is delivered to windings in the stator (case) rather than the rotor in a switched reluctance motor (SRM). This simplifies mechanical design because power does not have to be delivered to the moving rotor, which eliminates the need for a commutator. A switching system may deliver power to the different windings to limit torque ripple. The windings in an SRM are electrically isolated from each other, producing higher fault tolerance than induction motors. The optimal drive waveform is not a pure sinusoid, due to the non-linear torque relative to rotor displacement, and the windings' highly position-dependent inductance.

[0086] As described above, various example embodiments herein may significantly improve chamber dry pump pumping efficiency and reduce time averaged electrical power draw. For example, applying a servo to ballast flow may improve or optimize the operating point on the power efficiency. Varying the number of pump stages may improveAttorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA or optimize the compression ratio and mechanical losses for the volumetric throughput needed. For example, the compression ratio may be varied by spinning the multiple pump stages at different speeds as a set, varying the number of pump stages spinning at one time (e.g., via one or more clutches), or varying a spin speed of different combinations of stages (e.g., using multiple motors).

[0087] Use of disruptive motor technology (such as switched reluctance motors or synchronous reluctance motors), may reduce electrical and magnetic losses in the constantly running motors to optimize the torque needed as the load varies.

[0088] The foregoing description is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Therefore, while this disclosure includes particular examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon a study of the drawings, the specification, and the following claims. It should be understood that one or more steps within a method may be executed in different order (or concurrently) without altering the principles of the present disclosure. Further, although each of the embodiments is described above as having certain features, any one or more of those features described with respect to any embodiment of the disclosure can be implemented in and / or combined with features of any of the other embodiments, even if that combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with one another remain within the scope of this disclosure.

[0089] Spatial and functional relationships between elements (for example, between modules, circuit elements, semiconductor layers, etc.) are described using various terms, including “connected,” “engaged,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “disposed.” Unless explicitly described as being “direct,” when a relationship between first and second elements is described in the above disclosure, that relationship can be a direct relationship where no other intervening elements are present between the first and second elements, but can also be an indirect relationship where one or more intervening elements are present (either spatially or functionally) between the first and second elements. As used herein, the phrase at least one of A, B, and C should be construed to mean a logical (A OR B OR C), using a non-exclusive logical OR, and should not be construed to mean “at least one of A, at least one of B, and at least one of C.”Attorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA

[0090] In some implementations, a controller is part of a system, which may be part of the above-described examples. Such systems can comprise semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and / or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems. The controller, depending on the processing requirements and / or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and / or load locks connected to or interfaced with a specific system.

[0091] Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0092] The controller, in some implementations, may be a part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabricationAttorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus as described above, the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.

[0093] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and / or manufacturing of semiconductor wafers.

[0094] As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

Attorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POACLAIMSWhat is claimed is:1 . A substrate processing system comprising: a reactor configured to perform at least one substrate processing operation; at least one exhaust pipe connected between the reactor and at least one exhaust port; and a pump assembly configured to pump gas out of the reactor and through the at least one exhaust pipe to the at least one exhaust port, wherein, the pump assembly includes at least one motor, and the at least one motor is at least one of a switched reluctance motor or synchronous reluctance motor.

2. The substrate processing system of claim 1 , wherein the at least one motor is the switched reluctance motor.

3. The substrate processing system of claim 1 , wherein the at least one motor is the synchronous reluctance motor.

4. The substrate processing system of claim 1 , wherein the reactor is a sub- atmospheric reactor.

5. The substrate processing system of claim 1 , wherein the reactor is a super- atmospheric reactor.

6. The substrate processing system of claim 1 , further comprising a source configured to supply a combination of inert gas and hazardous process materials (HPMs) to the pump assembly.

7. A substrate processing system comprising: a reactor configured to perform at least one substrate processing operation; at least one exhaust pipe connected between the reactor and at least one exhaust port; and a pump assembly configured to pump gas out of the reactor and through the at least one exhaust pipe to the at least one exhaust port,Attorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA wherein the pump assembly includes multiple pump stages configured to operate with a variable compression ratio.

8. The substrate processing system of claim 7, wherein the pump assembly includes: a first pump stage configured to pump gas through the at least one exhaust pipe to the at least one exhaust port; a second pump stage configured to pump gas through the at least one exhaust pipe to the at least one exhaust port; at least one motor configured to drive the first pump stage and the second pump stage; a first clutch coupled between the at least one motor and the first pump stage; and a second clutch coupled between the at least one motor and the second pump stage, wherein the first clutch and the second clutch facilitate operating the pump assembly with a variable compression ratio.

9. The substrate processing system of claim 7, wherein the pump assembly includes: a first pump stage configured to pump gas through the at least one exhaust pipe to the at least one exhaust port; a second pump stage configured to pump gas through the at least one exhaust pipe to the at least one exhaust port; at least one motor configured to drive the first pump stage and the second pump stage; a first torque converter coupled between the at least one motor and the first pump stage; and a second torque converter coupled between the at least one motor and the second pump stage, wherein the first torque converter and the second torque converter facilitate operating the pump assembly with a variable compression ratio.

10. The substrate processing system of claim 7, wherein the pump assembly includes: multiple pump stages configured to pump gas through the at least one exhaust pipe to the at least one exhaust port; and a single motor configured to drive the multiple pump stages.Attorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA1 1 . The substrate processing system of claim 7, wherein: the pump assembly includes a first motor and a second motor; a first pump stage of the multiple pump stages is coupled with the first motor, and is configured to pump gas through the at least one exhaust pipe to the at least one exhaust port; and a second pump stage of the multiple pump stages is coupled with the second motor, and is configured to pump gas through the at least one exhaust pipe to the at least one exhaust port.

12. The substrate processing system of claim 1 1 , wherein: the first motor is configured to operate the first pump stage at a first speed; and the second motor is configured to operate the second pump stage at a second speed which is different than the first speed.

13. The substrate processing system of claim 7, wherein: the pump assembly includes at least one motor; and the at least one motor is at least one of a switched reluctance motor or synchronous reluctance motor.

14. The substrate processing system of claim 13, wherein the at least one motor is the switched reluctance motor.

15. The substrate processing system of claim 13, wherein the at least one motor is the synchronous reluctance motor.

16. The substrate processing system of claim 7, wherein the reactor is a sub- atmospheric reactor.

17. The substrate processing system of claim 7, wherein the reactor is a super- atmospheric reactor.

18. The substrate processing system of claim 7, further comprising a gas source configured to supply a combination of inert gas and hazardous process materials (HPMs) to the pump assembly.Attorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA19. The substrate processing system of claim 7, wherein the multiple pump stages are configured to operate with the variable compression ratio by spinning the multiple pump stages as a set at different speeds.

20. The substrate processing system of claim 19, wherein the multiple pump stages are configured to operate with the variable compression ratio by varying a spin speed of different combination of pump stages using multiple motors.21 . The substrate processing system of claim 7, wherein the multiple pump stages are configured to operate with the variable compression ratio by varying a number of pump stages spinning at one time using one or more clutches.

22. The substrate processing system of claim 1 , further comprising a controller, and a sensor configured to sense a gas load of the substrate processing system, wherein the controller is configured to control a pumping speed of the pump assembly based on the sensed gas load.

23. The substrate processing system of claim 1 , further comprising a controller configured to receive an external control input, wherein the controller is configured to control a pumping speed of the pump assembly based on the external control input.

24. A substrate processing system comprising: a reactor configured to perform at least one substrate processing operation; at least one exhaust pipe connected between the reactor and at least one exhaust port; and a pump assembly configured to pump gas out of the reactor and through the at least one exhaust pipe to the at least one exhaust port; a servo coupled with the pump assembly; and a system controller configured to control the servo to generate a variable ballast flow to the pump assembly.

25. The substrate processing system of claim 24, wherein the system controller is configured to control the servo to generate the variable ballast flow to optimize a throughput-pressure curve for pumping gas though the at least one exhaust pipe to the at least one exhaust port.Attorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA26. The substrate processing system of claim 24, wherein: the pump assembly includes at least one motor; and the at least one motor is at least one of a switched reluctance motor or synchronous reluctance motor.

27. The substrate processing system of claim 26, wherein the at least one motor is the switched reluctance motor.

28. The substrate processing system of claim 26, wherein the at least one motor is the synchronous reluctance motor.

29. The substrate processing system of claim 26, wherein the reactor is a sub- atmospheric reactor.

30. The substrate processing system of claim 24, wherein the reactor is a super- atmospheric reactor.

31. The substrate processing system of claim 24, further comprising a gas source configured to supply a combination of inert gas and hazardous process materials (HPMs) to the pump assembly.

32. A substrate processing system comprising: a reactor configured to perform at least one substrate processing operation; at least one exhaust pipe connected between the reactor and at least one exhaust port; and a pump assembly configured to pump gas out of the reactor and through the at least one exhaust pipe to the at least one exhaust port, wherein the pump assembly includes, at least one motor, and a transmission coupled between the at least one motor and one or more pump stages of the pump assembly.

33. The substrate processing system of claim 32, wherein the transmission is configured to turn on and off discretely using a clutch.Attorney Docket No. 11829-1 WOHDP Ref. No. 15545-001288-WO-POA34. The substrate processing system of claim 32, wherein the transmission is configured to drive the one or more pump stages at discretely different speeds.

35. The substrate processing system of claim 32, wherein the transmission is a continuously variable transmission (CVT) configured to drive the one or more pump stages at continuously different speeds.

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