Light-emitting substrate and preparation method therefor, and light-emitting apparatus

Abstract

A light-emitting substrate. The light-emitting substrate comprises: a base and a plurality of light-emitting devices, wherein the plurality of light-emitting devices are located on one side of the base. Each of the plurality of light-emitting devices comprises: an anode, a quantum dot light-emitting layer, an electron transport layer and a cathode, which are stacked on one side of the base, wherein the material of the electron transport layer comprises a metal oxide; the electron transport layer further comprises hydrogen atoms; and in the electron transport layer, the ratio of the number of the hydrogen atoms to the number of metal atoms in the metal oxide ranges from 1:5 to 3:10.

Description

Light-emitting substrate, preparation method thereof and light-emitting device TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of display, and in particular to a light-emitting substrate, a preparation method thereof and a light-emitting device. BACKGROUND

[0002] As a new type of light-emitting material, quantum dots (QDs) have the advantages of high light color purity, high light-emitting quantum efficiency, adjustable light-emitting color, long service life, etc., and have become a research hotspot of new light-emitting diode (LED) light-emitting materials. Therefore, quantum dot light-emitting diode (QLED) using quantum dot material as a light-emitting layer has become a main direction of research on new display devices.

[0003] SUMMARY

[0004] In one aspect, a light-emitting substrate is provided, which includes a substrate and a plurality of light-emitting devices located on one side of the substrate; each of the plurality of light-emitting devices includes an anode, a quantum dot light-emitting layer, an electron transport layer and a cathode stacked on one side of the substrate; wherein the material of the electron transport layer includes a metal oxide; the electron transport layer further includes hydrogen atoms; in the electron transport layer, the ratio of the number of hydrogen atoms to the number of metal atoms in the metal oxide ranges from 1:5 to 3:10.

[0005] In some embodiments, the light-emitting substrate further includes a first functional layer; the first functional layer includes a first sub-layer located on the side of the first selected electrode away from the substrate, the first selected electrode being one of the anode and the cathode relatively away from the substrate; in the first sub-layer, the ratio of the number of hydrogen atoms to the total number of atoms in the first sub-layer ranges from 0% to 10%.

[0006] In some embodiments, the first functional layer further includes a second sub-layer located on the side of the second selected electrode close to the substrate, the second selected electrode being one of the anode and the cathode relatively close to the substrate; in the second sub-layer, the ratio of the number of hydrogen atoms to the total number of atoms in the second sub-layer ranges from 0% to 10%.

[0007] In some embodiments, the material of the first functional layer includes at least one of aluminum trioxide, silicon dioxide, polymethyl methacrylate and polytetrafluoroethylene.

[0008] In some embodiments, the material of the first functional layer comprises at least one of aluminum oxide and silicon dioxide, and the thickness of the first functional layer ranges from 10 nm to 100 nm; or, the material of the first functional layer comprises at least one of polymethyl methacrylate and polytetrafluoroethylene, and the thickness of the first functional layer ranges from 500 nm to 2000 nm.

[0009] In some embodiments, the material of the first functional layer comprises at least one of aluminum oxide and silicon dioxide, and the density of the first functional layer ranges from 98% to 99.5%; and / or, the roughness of the first functional layer ranges from 1 nm to 2 nm.

[0010] In some embodiments, the light-emitting substrate further comprises: a second functional layer located on the side of the first sub-layer close to the first selected electrode; in the second functional layer, the ratio of the number of hydrogen atoms to the total number of atoms in the second functional layer ranges from 20% to 40%.

[0011] In some embodiments, the material of the second functional layer comprises at least one of silicon nitride, silicon oxide, silicon oxynitride, and silicon carbonitride.

[0012] In some embodiments, the thickness of the second functional layer ranges from 400 nm to 600 nm.

[0013] In some embodiments, the light-emitting substrate further comprises: an encapsulation layer located on the side of the first sub-layer away from the substrate.

[0014] In some embodiments, the ratio of the number of hydrogen atoms to the total number of atoms in the encapsulation layer is greater than the ratio of the number of hydrogen atoms to the total number of atoms in the first functional layer.

[0015] In some embodiments, the encapsulation layer comprises: at least one inorganic layer, or two inorganic layers and an organic layer located between the two inorganic layers; the material of the inorganic layer comprises at least one of silicon carbide, silicon oxide, and silicon oxynitride; the material of the organic layer comprises at least one of acrylic, polyimide, and polyamide; and the thickness of the encapsulation layer ranges from 400 nm to 1000 nm.

[0016] In some embodiments, the light-emitting substrate further comprises: further comprising: a cover plate and a frame, the cover plate is disposed opposite to the substrate, the frame is located between the cover plate and the substrate, and the frame, the cover plate and the substrate enclose a closed cavity, and a plurality of light-emitting devices are located in the cavity; the light-emitting substrate further comprises: a third functional part, in the orthographic projection to the substrate, the third functional part is located within the boundary of the frame away from the cavity, and the material of the third functional part comprises at least one of acrylic acid, isobutyric acid, saturated organic acid and N-N-dimethyl acrylamide.

[0017] In some embodiments, the ratio of the mass of the third functional part to the light-emitting area of the light-emitting substrate ranges from 0.125g / cm 2 to 0.375g / cm 2 .

[0018] In some embodiments, the third functional part is located on the side of the frame facing the cavity, and the third functional part extends along a second direction; wherein the second direction is the extension direction of the frame around the cavity.

[0019] In some embodiments, the size of the third functional part in a first direction is equal to or less than the size of the frame in the first direction; the first direction is the direction perpendicular to the substrate.

[0020] In some embodiments, in the orthographic projection to the substrate, the third functional part overlaps with the frame.

[0021] In some embodiments, the side of the cover plate facing the substrate is provided with a first groove, in the orthographic projection to the substrate, the first groove is located between the inner boundary and the outer boundary of the frame; the third functional part is located in the first groove.

[0022] In some embodiments, the size of the third functional part in a first direction is less than the size of the first groove in the first direction; the first direction is the direction perpendicular to the substrate.

[0023] In some embodiments, the ratio of the size of the first groove in a first direction to the size of the cover plate in the first direction ranges from 3:5 to 3:7.

[0024] In some embodiments, the third functional part is located on the side of the cover plate facing the substrate, and the frame comprises: a first glue part and a second glue part connected, the first glue part is located on the side of the third functional part away from the cover plate, and the second glue part is located on the side of the third functional part away from the cavity.

[0025] In some embodiments, the second adhesive portion is further located on a side of the third functional portion close to the cavity.

[0026] In some embodiments, the third functional portion is continuously arranged along the second direction; or, the third functional portion comprises a plurality of functional sub-portions, which are arranged at intervals along the second direction.

[0027] In some embodiments, a side of the cover plate facing the substrate is provided with a second groove, which overlaps with a light-emitting region of the light-emitting substrate in orthographic projection onto the substrate; and the third functional portion is located in the second groove.

[0028] In some embodiments, a ratio of a size of the second groove in a first direction to a size of the cover plate in the first direction ranges from 3:5 to 3:7.

[0029] In some embodiments, the second groove comprises a plurality of second sub-grooves arranged at intervals, and the third functional portion comprises a plurality of functional sub-portions, each of which is arranged in a second sub-groove.

[0030] In some embodiments, a material of the adhesive frame comprises epoxy resin.

[0031] In another aspect, a preparation method of a light-emitting substrate is provided, which comprises: forming an initial film layer of a plurality of light-emitting devices on a side of a substrate, the initial film layer comprising an initial electron transport layer; and processing the initial film layer of the plurality of light-emitting devices to make hydrogen atoms enter the initial electron transport layer to form an electron transport layer, thereby obtaining the light-emitting substrate.

[0032] In some embodiments, the processing of the initial film layer of the plurality of light-emitting devices comprises processing the initial film layer in a water atmosphere, hydrogen plasma or hydrogen gas.

[0033] In some embodiments, a processing time of the initial film layer of the plurality of light-emitting devices ranges from 90 s to 180 s.

[0034] In some embodiments, the forming of the initial film layer of the plurality of light-emitting devices on the side of the substrate comprises: sequentially forming an anode, a quantum dot light-emitting layer, an initial electron transport layer and a cathode on the side of the substrate; or sequentially forming a cathode and an initial electron transport layer on the side of the substrate.

[0035] In some embodiments, the method for manufacturing the light-emitting substrate further comprises: forming a first functional layer; the first functional layer comprises: a first sub-layer, the first sub-layer is located on a side of the first selected electrode away from the substrate, the first selected electrode is one of the anode and the cathode relatively away from the substrate; in the first sub-layer, the ratio of the number of hydrogen atoms to the total number of atoms in the first sub-layer ranges from 0% to 10%.

[0036] In another aspect, another method for manufacturing a light-emitting substrate is provided, the method comprising: forming a plurality of light-emitting devices on a side of a substrate; forming an initial adhesive frame and an initial third functional part on a side of a cover plate, in the orthographic projection onto the cover plate, the initial third functional part is located within the outer boundary of the initial adhesive frame, the material of the initial third functional part comprises at least one of acrylic acid, isobutyric acid, saturated organic acid and N-N-dimethyl acrylamide; laminating the cover plate and the substrate, the side of the cover plate provided with the initial adhesive frame and the initial third functional part faces the substrate, the initial adhesive frame forms an adhesive frame, the initial third functional part forms a third functional part, the adhesive frame, the cover plate and the substrate enclose a closed cavity, a plurality of the light-emitting devices are located in the cavity, to obtain a light-emitting substrate.

[0037] In another aspect, a light-emitting device is provided, comprising: a driving chip and a light-emitting substrate as any one of the above embodiments, the driving chip is used to drive the light-emitting substrate to emit light. BRIEF DESCRIPTION OF DRAWINGS

[0038] In order to more clearly illustrate the technical solutions in the present disclosure, the following will briefly introduce the drawings needed to be used in some embodiments of the present disclosure. Obviously, the drawings in the following description are only the drawings of some embodiments of the present disclosure, and other drawings can also be obtained by those skilled in the art according to these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams, and are not limited to the actual size of the product, the actual process of the method, the actual timing of the signal, etc. involved in the embodiments of the present disclosure.

[0039] FIG. 1 is a structural diagram of a light-emitting device according to some embodiments of the present disclosure;

[0040] FIG. 2 is a structural diagram of a light-emitting substrate according to some embodiments of the present disclosure;

[0041] FIG. 3 is another structural diagram of a light-emitting substrate according to some embodiments of the present disclosure;

[0042] FIG. 4 is still another structural diagram of a light-emitting substrate according to some embodiments of the present disclosure;

[0043] FIG. 5 is still another structural diagram of a light-emitting substrate according to some embodiments of the present disclosure;

[0044] FIG. 6 is a current density curve of a light emitting device according to some embodiments of the present disclosure;

[0045] FIG. 7 is a light emitting brightness curve of a light emitting device according to some embodiments of the present disclosure;

[0046] FIG. 8 is yet another structure diagram of a light emitting substrate according to some embodiments of the present disclosure;

[0047] FIG. 9 is another current density curve of a light emitting device according to some embodiments of the present disclosure;

[0048] FIG. 10 is another light emitting brightness curve of a light emitting device according to some embodiments of the present disclosure;

[0049] FIG. 11 is yet another current density curve of a light emitting device according to some embodiments of the present disclosure;

[0050] FIG. 12 is a current efficiency curve of a light emitting device according to some embodiments of the present disclosure;

[0051] FIG. 13 is yet another structure diagram of a light emitting substrate according to some embodiments of the present disclosure;

[0052] FIG. 14 is a scanning electron microscope image of a first functional layer according to some embodiments of the present disclosure;

[0053] FIG. 15 is yet another structure diagram of a light emitting substrate according to some embodiments of the present disclosure;

[0054] FIG. 16 is yet another structure diagram of a light emitting substrate according to some embodiments of the present disclosure;

[0055] FIG. 17 is yet another structure diagram of a light emitting substrate according to some embodiments of the present disclosure;

[0056] FIG. 18 is a structure diagram of relative positions of a glue frame and a third functional part according to some embodiments of the present disclosure;

[0057] FIG. 19 is another structure diagram of relative positions of a glue frame and a third functional part according to some embodiments of the present disclosure;

[0058] FIG. 20 is yet another structure diagram of a light emitting substrate according to some embodiments of the present disclosure;

[0059] FIG. 21 is yet another structure diagram of a light emitting substrate according to some embodiments of the present disclosure;

[0060] FIG. 22 is an enlarged view of A of the light emitting substrate provided in FIG. 20 according to some embodiments of the present disclosure;

[0061] FIG. 23 is yet another structure diagram of a light emitting substrate according to some embodiments of the present disclosure;

[0062] FIG. 24 is a structural diagram of another relative position of the glue frame and the third functional part according to some embodiments of the present disclosure;

[0063] FIG. 25 is a structural diagram of another relative position of the glue frame and the third functional part according to some embodiments of the present disclosure;

[0064] FIG. 26 is another structural diagram of a light-emitting substrate according to some embodiments of the present disclosure;

[0065] FIG. 27 is another structural diagram of a light-emitting substrate according to some embodiments of the present disclosure;

[0066] FIG. 28 is a flow chart of a preparation method of a light-emitting substrate according to some embodiments of the present disclosure;

[0067] FIG. 29 is a structural diagram corresponding to each step of a preparation method of a light-emitting substrate according to some embodiments of the present disclosure;

[0068] FIG. 30 is another structural diagram corresponding to each step of a preparation method of a light-emitting substrate according to some embodiments of the present disclosure;

[0069] FIG. 31 is a current density curve diagram of a light-emitting device after different hydrogen supplement treatment times according to some embodiments of the present disclosure;

[0070] FIG. 32 is a current efficiency curve diagram of a light-emitting device after different hydrogen supplement treatment times according to some embodiments of the present disclosure;

[0071] FIG. 33 is another flow chart of a preparation method of a light-emitting substrate according to some embodiments of the present disclosure;

[0072] FIG. 34 is another structural diagram corresponding to each step of a preparation method of a light-emitting substrate according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0073] The technical solutions in some embodiments of the present disclosure will be described clearly and completely below with reference to the drawings. Obviously, the described embodiments are only some of the embodiments of the present disclosure, but not all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by a person of ordinary skill in the art belong to the scope of protection of the present disclosure.

[0074] Unless the context clearly requires otherwise, throughout the description and the claims, the term "comprise," and variations thereof (e.g., "comprises" and "comprising"), will be construed to be inclusive in a manner consistent with the term's plain meaning, namely, "including but not limited to." In describing the description, the terms "one embodiment," "some embodiments," "exemplary embodiments," "example," "specific example" or "some examples," and the like, mean that a particular feature, structure, material, or characteristic is included in at least one embodiment or example of the disclosure, but that it can not be included in other embodiments or examples. The illustrative appearance of the foregoing terms in various places in the description are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics can be combined in any suitable manner in one or more embodiments or examples.

[0075] Hereinafter, the terms "first", "second", etc. are used only for the purpose of description and should not be construed as indicating or implying relative importance or implying the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the embodiments of the disclosure, the meaning of "a plurality of" is two or more, unless otherwise specified.

[0076] In describing some embodiments, "coupled" and "connected," and variations thereof, can be used. The term "connected" should be interpreted broadly, for example, "connected" can be fixedly connected, or detachably connected, or integrated; can be directly connected, or indirectly connected through an intermediate medium. The term "coupled" indicates, for example, that two or more components have direct physical contact or electrical contact. The term "coupled" or "communicatively coupled" can also mean that two or more components do not have direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the content herein.

[0077] "A, B, and C at least one of" has the same meaning as "at least one of A, B, or C", and includes the following combinations of A, B, and C: only A, only B, only C, a combination of A and B, a combination of A and C, a combination of B and C, and a combination of A, B, and C.

[0078] "A and / or B" includes the following three combinations: only A, only B, and a combination of A and B.

[0079] As used herein, "about," "approximately," or "around" includes the recited value and the average value within an acceptable range of deviation from the recited value, as determined by one of ordinary skill in the art taking into account the measurement being discussed and the error associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0080] As used herein, "parallel," "perpendicular," "equal" includes the recited condition and conditions that approximate the recited condition, the approximation being within an acceptable range of deviation, as determined by one of ordinary skill in the art taking into account the measurement being discussed and the error associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallel and near parallel, where the acceptable range of deviation for near parallel can be, for example, within 5°; "perpendicular" includes absolute perpendicular and near perpendicular, where the acceptable range of deviation for near perpendicular can also be, for example, within 5°. "Equal" includes absolute equality and near equality, where the acceptable range of deviation for near equality can be, for example, a difference between the two that is less than or equal to 5% of either.

[0081] It will be understood that when a layer or element is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or intervening layers can also be present.

[0082] Exemplary embodiments are described herein with reference to cross-sectional and / or plan view illustrations that are idealized examples of exemplary embodiments. In the drawings, the thickness of layers and regions are exaggerated for clarity. Accordingly, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, the exemplary embodiments should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result from, for example, manufacturing. For example, an etched region illustrated as a rectangle will typically have rounded or curved features. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region of a device and are not intended to limit the scope of the exemplary embodiments.

[0083] As shown in FIG. 1, some embodiments of the present disclosure provide a light emitting device 1000 including a light emitting substrate 100.

[0084] The light emitting device 1000 is, for example, a quantum dot light emitting diode (QLED) light emitting device 1000. In this case, the light emitting substrate 100 is a QLED light emitting substrate. Based on the quantum confinement effect, quantum dots have excellent light emitting properties such as wide band absorption, narrow band emission, and continuously adjustable peak position. Meanwhile, quantum dots have solution processability, which avoids the use of expensive vacuum equipment, so that the quantum dot light emitting diode using quantum dots as the light emitting material can be a new type of light emitting diode.

[0085] For example, as shown in FIG. 1, the light emitting device 1000 further includes a driving chip 200. The driving chip 200 is configured to drive the light emitting substrate 100 to emit light.

[0086] The light emitting device 1000 can be any light emitting device that displays both motion (e.g., video) and still (e.g., still images) and both text and graphics. More specifically, the light emitting device 1000 of embodiments is expected to be implemented in or in association with a variety of electronic devices such as, but not limited to, mobile telephones, wireless devices, personal data assistants (PDAs), hand-held or portable computers, GPS receivers / navigators, cameras, MP4 video players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat panel displays, computer monitors, auto displays (e.g., odometer display, etc.), cockpit controls and / or displays, display of camera views (e.g., in a vehicle), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., display of images on a piece of jewelry) and the like.

[0087] In some embodiments, as shown in FIG. 2, the light emitting substrate 100 includes a substrate 101 and a plurality of light emitting devices 10 located on one side of the substrate 101.

[0088] For example, the material of the substrate 101 can be a rigid material, such as glass, to realize a rigid substrate display, or the material of the substrate 101 can also be a flexible material, such as polyimide (PI) or polyethylene glycol terephthalate (PET), to realize a flexible substrate display.

[0089] For example, the light emitting substrate 100 includes a light emitting functional layer 30 located on one side of the substrate 101, and the light emitting functional layer 30 includes a pixel defining layer 301 and a plurality of light emitting devices 10. The pixel defining layer 301 is provided with a plurality of openings K, and the plurality of light emitting devices 10 are arranged one by one in the plurality of openings K.

[0090] In some examples, as shown in FIG. 2, the light-emitting substrate 100 further comprises a driving circuit layer 20 between the substrate 101 and the light-emitting functional layer 30, and the driving circuit layer 20 comprises a plurality of pixel driving circuits 201.

[0091] Exemplarily, the pixel driving circuit 201 can generate a driving current. Each light-emitting device 10 can emit light under the driving effect of the driving current generated by the corresponding pixel driving circuit 201, and the light emitted by the plurality of light-emitting devices 10 cooperates with each other, so that the light-emitting substrate 100 realizes the light-emitting or display function.

[0092] In some examples, the driving circuit layer 20 comprises electrodes in the form of longitudinal and transverse strips, and the parts where the rows and columns intersect can emit light. At this time, the pixel driving circuit 201 does not adopt TFT technology, and the light-emitting substrate 100 can be referred to as a passive driving light-emitting substrate, for example, the light-emitting substrate 100 is a passive driving QLED light-emitting substrate, which can also be referred to as a PMQLED light-emitting substrate.

[0093] In other examples, as shown in FIG. 2, the driving circuit layer 20 comprises a plurality of pixel driving circuits 201 arranged in an array, and the pixel driving circuit 201 comprises a plurality of transistors TFT. The pixel driving circuit 201 is electrically connected with the light-emitting device 10, and is used for driving the light-emitting device 10 to emit light. At this time, the pixel driving circuit 201 adopts TFT technology, and the light-emitting substrate 100 can be referred to as an active driving light-emitting substrate, for example, the light-emitting substrate 100 is an active driving QLED light-emitting substrate, which can also be referred to as an AMQLED light-emitting substrate.

[0094] In some examples, as shown in FIG. 2, the light-emitting substrate 100 further comprises an encapsulation layer 40 arranged on the side of the plurality of light-emitting devices 10 away from the substrate 101.

[0095] Exemplarily, the encapsulation layer 40 comprises: at least one inorganic layer, or two inorganic layers and an organic layer between the two inorganic layers; the material of the inorganic layer comprises: at least one of silicon carbide, silicon oxide and silicon oxynitride; and the material of the organic layer comprises: at least one of acrylic, polyimide and polyamide.

[0096] It should be understood that the encapsulation layer 40 can effectively prevent water vapor and oxygen in the external environment from entering the light-emitting substrate 100, so as to solve the problem of shortening the service life of the light-emitting substrate 100 due to the damage of the materials in the light-emitting device 10 caused by the water vapor and oxygen entering the light-emitting substrate 100.

[0097] Exemplarily, as shown in FIG. 2, the driving circuit layer 20, the light-emitting functional layer 30 and the encapsulation layer 40 can be stacked on one side of the substrate 101, and the driving circuit layer 20, the light-emitting functional layer 30 and the encapsulation layer 40 are sequentially arranged in the direction away from the substrate 101.

[0098] In some embodiments, as shown in FIG. 3, each of the plurality of light emitting devices 10 comprises an anode 11, a quantum dot light emitting layer 13, and a cathode 15 which are stacked.

[0099] Exemplarily, the anode 11, the quantum dot light emitting layer 13, and the cathode 15 can be stacked along a first direction Y which is perpendicular to the substrate 101.

[0100] Based on the above structure, the light emitting principle of the light emitting device 10 is that, by means of a circuit connected by the anode 11 and the cathode 15, for example, the pixel driving circuit 201 shown in FIG. 2, holes are injected into the quantum dot light emitting layer 13 by the anode 11, and electrons are injected into the quantum dot light emitting layer 13 by the cathode 15, the injected electrons and holes form excitons (i.e. electron-hole pairs) in the quantum dot light emitting layer 13, and the excitons return to the ground state by radiative transition to emit photons.

[0101] Exemplarily, in order to ensure that the light emitting device 10 can effectively emit light, the anode 11 can be made of a material with a high work function, so that the holes generated by the anode 11 can effectively migrate into the quantum dot light emitting layer 13 under the driving of an electric field, thereby recombining with the electrons generated by the cathode 15 to emit light.

[0102] In some examples, the anode 11 can be a transparent electrode, in which case the material of the anode 11 can be indium tin oxide (ITO) or fluorine-doped tin dioxide conductive glass (FTO), or the material of the anode 11 can also be a conductive polymer, for example polyaniline, polycarbazole, polythiophene, or polypropylene, etc. In yet other examples, the anode 11 can be a non-transparent electrode, in which case the material of the anode 11 can be a metal material, for example aluminum or silver, etc.

[0103] Exemplarily, the cathode 15 can be made of a material with a low work function, so that the electrons generated by the cathode 15 can more easily be injected into the adjacent film layer (for example, the electron transport unit 14 described in detail below), so that the electrons generated by the cathode 15 can effectively migrate into the quantum dot light emitting layer 13 under the driving of an electric field, thereby recombining with the holes generated by the anode 11 to emit light.

[0104] In some examples, the material of the cathode 15 can be a metal material, a metal oxide, or a metal alloy, etc., the metal material being for example aluminum, silver, gold, magnesium, calcium, ytterbium, indium, lithium, potassium, sodium, tin, titanium, lead, samarium, or yttrium, etc., the metal oxide being for example indium tin oxide or indium zinc oxide, etc., and the metal alloy being for example magnesium-silver alloy, ytterbium-gold alloy, ytterbium-silver alloy, lithium-aluminum alloy, or lithium-calcium-magnesium alloy, etc. Alternatively, the material of the cathode 15 can be a laminated material, for example magnesium / aluminum, magnesium / silver, aluminum / silver, aluminum / gold, ytterbium / gold, ytterbium / silver, calcium / magnesium, calcium / silver, or barium / silver, etc.

[0105] In some examples, the material of the quantum dot light emitting layer 13 includes a quantum dot light emitting material. For example, the quantum dot light emitting material includes at least one of CdS, CdSe, CdTe, ZnSe, InP, PbS, CuInS2, ZnO, CsPbCl3, CsPbBr3, CsPhI3, CdS / ZnS, CdSe / ZnS, ZnSe, InP / ZnS, PbS / ZnS, InAs, InGaAs, InGaN, GaNk, ZnTe, Si, Ge, and C, etc. Among them, the quantum dot light emitting material is CdS / ZnS, CdSe / ZnS, InP / ZnS, and PbS / ZnS, which means that the quantum dot light emitting material is a core-shell structure, in which one material is the material of the core and the other is the material of the shell. For example, the quantum dot light emitting material is CdS / ZnS, which means that the material of the core of the quantum dot is CdS and the material of the shell is ZnS.

[0106] In other embodiments, the quantum dot light emitting material can be other nanoscale materials, such as nanorods, nanosheets, etc. The composition of the other nanoscale materials can include at least one of CdS, CdSe, CdTe, ZnSe, InP, PbS, CuInS2, ZnO, CsPbCl3, CsPbBr3, CsPhI3, CdS / ZnS, CdSe / ZnS, ZnSe, InP / ZnS, PbS / ZnS, InAs, InGaAs, InGaN, GaNk, ZnTe, Si, Ge, and C, etc.

[0107] In some embodiments, as shown in FIG. 3, to improve the light emitting efficiency, the light emitting device 10 further includes a hole transport unit 12 located on the side of the quantum dot light emitting layer 13 close to the anode 11 and in contact with the quantum dot light emitting layer 13. The hole transport unit 12 includes at least one of a hole injection layer (HIL), a hole transport layer (HTL), and an electron blocking layer (EBL), for example.

[0108] In some embodiments, as shown in FIG. 3, to improve the light emitting efficiency, the light emitting device 10 further includes an electron transport unit 14 located on the side of the quantum dot light emitting layer 13 close to the cathode 15 and in contact with the quantum dot light emitting layer 13. The electron transport unit 14 includes at least one of an electron injection layer (EIL), an electron transport layer (ETL) 141, and a hole blocking layer (EBL), for example.

[0109] By setting the hole transport unit 12 and the electron transport unit 14, a transition step is equivalent to being set between the anode 11 and the quantum dot light-emitting layer 13 and between the cathode 15 and the quantum dot light-emitting layer 13, the height of the potential barrier to be overcome by the carrier transition is reduced, and the light-emitting efficiency of the light-emitting device 10 is higher.

[0110] Exemplarily, the material of the hole injection layer can be an organic material, for example, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (abbreviated as PEDOT:PSS); or the material of the hole injection layer can also be an inorganic oxide, for example, molybdenum oxide, etc.

[0111] Exemplarily, the material of the hole transport layer can be an organic material, for example, poly(N-vinylcarbazole) (abbreviated as PVK), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butyphenyl)diphenylamine)] (abbreviated as TFB), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (abbreviated as TPD), or 4,4',4"-tris(N-carbazolyl)triphenylamine (abbreviated as TAPC), etc.; or the material of the hole transport layer can also be an inorganic oxide, for example, nickel oxide or vanadium oxide, etc.

[0112] Exemplarily, the material of the electron transport layer 141 can be zinc oxide or magnesium zinc oxide, etc. Here, the zinc oxide or the magnesium zinc oxide can be nanoparticles or a thin film prepared by a sputtering process.

[0113] In some examples, as shown in FIGS. 3 and 4, the light-emitting device 10 can be divided into a normal light-emitting device and an inverted light-emitting device.

[0114] As shown in FIG. 3, the anode 11, the hole transport unit 12, the quantum dot light-emitting layer 13, the electron transport unit 14, and the cathode 15 are arranged in a direction away from the substrate 101, and the light-emitting device 10 is a normal light-emitting device.

[0115] As shown in FIG. 4, the anode 11, the hole transport unit 12, the quantum dot light-emitting layer 13, the electron transport unit 14, and the cathode 15 are arranged in a direction close to the substrate 101, and the light-emitting device 10 is an inverted light-emitting device.

[0116] It should be noted that FIGS. 3 and 4 are schematic diagrams of the light-emitting substrate 100 after omitting the driving circuit layer 20.

[0117] In some embodiments, as shown in FIG. 5, the light-emitting substrate 100 further comprises a cover plate 50 and a frame 60, the cover plate 50 is arranged opposite to the substrate 101, the frame 60 is arranged between the cover plate 50 and the substrate 101, and the cover plate 50, the substrate 101 and the frame 60 form an enclosed cavity 70, and the plurality of light-emitting devices 10 are arranged in the cavity 70.

[0118] For example, the material of the frame 60 is acidic glue or non-acidic glue. For example, the acidic glue comprises acrylic resin, and the non-acidic glue comprises epoxy resin. It can be understood that the content of hydrogen atoms in the acidic glue is greater than that in the non-acidic glue.

[0119] The inventor finds that the electron transport material of the electron transport layer 141 has a large number of vacancy defects, which interact with the hydrogen atoms released from the frame 60, so that the light-emitting device 10 is positively aged under the action of the frame 60. Under the action of positive aging, the efficiency, conductivity, light-emitting morphology and working life of the light-emitting device 10 are improved, and the efficiency and working life of the light-emitting device 10 are improved.

[0120] For example, the hydrogen atoms can fill the oxygen vacancies in the lattice of the electron transport layer 141, or the hydrogen atoms can fill between the oxygen elements and the metal elements. On the one hand, the hydrogen atoms can provide n-type doping to the electron transport layer 141 as shallow donors to increase the concentration of n-type carriers and improve the conductivity of the electron transport layer 141; on the other hand, the hydrogen atoms can also passivate the defects in the lattice of the electron transport layer 141, thereby achieving the purpose of improving the efficiency and working life of the light-emitting device 10. Wherein, the shallow donor refers to the hydrogen atoms providing electrons through delocalization to improve the conductivity of the electron transport layer 141.

[0121] In order to illustrate that the acidic glue can make the light-emitting device 10 have a positive aging phenomenon, the following data is provided.

[0122] FIG. 6 is a current density curve of the light-emitting device 10, and FIG. 7 is a light-emitting brightness curve of the light-emitting device 10. The structure of the light-emitting substrate 100 of Example 1 and Example 2 is shown in FIG. 5, except that in Example 1, the material of the frame 60 is non-acidic glue; in Example 2, the material of the frame 60 is acidic glue.

[0123] As can be seen from FIG. 6 and FIG. 7, compared with Example 1 in which the material of the frame 60 is non-acidic glue, the current density and light-emitting brightness of the light-emitting device 10 of Example 2 in which the material of the frame 60 is acidic glue are obviously higher. It is illustrated that the hydrogen atoms in the acidic glue can make the light-emitting device 10 have a positive aging phenomenon.

[0124] However, under the positive aging effect, the light emitting device 10 has a poor stability problem. One of the reasons for the poor stability of the light emitting device 10 is that the positive aging effect is difficult to control. For example, the content of the acidic component (i.e., hydrogen atom) in the glue frame 60 is difficult to control, so that the amount of hydrogen atoms released from the glue frame 60 is also difficult to control. For another example, the time and intensity of the positive aging effect are in an uncontrollable state. For yet another example, in actual mass production of the light emitting device 10, the influence of the acidic component in the glue frame 60 may not be replicated, which also leads to poor controllability of the positive aging effect.

[0125] Under the condition that the positive aging effect is difficult to control, as the storage time of the light emitting device 10 is prolonged, the light emitting device 10 itself has poor stability, the storage stability of the light emitting device 10 is difficult to guarantee, and sometimes efficiency roll-off and poor light emitting appearance occur. Therefore, in actual application, the method of using the positive aging effect to improve the performance of the light emitting device 10 is difficult to effectively utilize.

[0126] In some examples, the acidic component in the glue frame 60 is strong, and the positive aging effect occurs inside the light emitting device 10; as the time of the positive aging effect continues, the acidic component in the glue frame 60 may react with the material of the electron transport layer 141 and / or the material of the electrode (anode 11 or cathode 15), which has a corrosion effect on the appearance of the light emitting device 10 and a negative effect on the performance of the light emitting device 10.

[0127] The inventors have also found that in some examples, as shown in FIG. 2, a part of hydrogen atoms will be stored in the encapsulation layer 40, and the hydrogen atoms will also cause the light emitting device 10 to be positively aged or excessively aged, and long-term hydrogen atom diffusion will seriously affect the stability and light emitting appearance of the light emitting device 10.

[0128] Based on this, as shown in FIG. 8, an embodiment of the present disclosure provides a light emitting substrate 100, which comprises a substrate 101 and a plurality of light emitting devices 10 located on one side of the substrate 101. Each of the plurality of light emitting devices 10 comprises an anode 11, a quantum dot light emitting layer 13 and a cathode 15 which are stacked. The material of the electron transport layer 141 comprises a metal oxide; in the electron transport layer 141, the ratio of the number of hydrogen atoms to the number of metal atoms in the metal oxide ranges from 1:5 to 3:10.

[0129] For example, when the material of the electron transport layer 141 is zinc oxide, the ratio of the number of hydrogen atoms to the number of zinc atoms ranges from 1:5 to 3:10; when the material of the electron transport layer 141 is magnesium zinc oxide, the ratio of the number of hydrogen atoms to the sum of the number of zinc atoms and the number of magnesium atoms ranges from 1:5 to 3:10.

[0130] For example, the ratio of the number of hydrogen atoms in the electron transport layer 141 to the number of metal atoms in the metal oxide can be tested using infrared spectroscopy. For example, when the material of the electron transport layer 141 is zinc oxide, the peak in the infrared spectrum near the wave number 3710 cm -1 The ratio of the area of the peak of the hydrogen atoms to the area of the peak of the zinc oxide is the ratio of the number of hydrogen atoms in the electron transport layer 141 to the number of zinc atoms in the zinc oxide.

[0131] For example, as shown in FIG. 8, the ratio of the number of hydrogen atoms to the number of metal atoms in the metal oxide in the electron transport layer 141 is 1:5, 13:60, 7:30, 1:4, 4:15, or 3:10, without being limited herein.

[0132] By setting the ratio of the number of hydrogen atoms to the number of metal atoms in the metal oxide in the electron transport layer 141 in the range of 1:5 to 3:10, the light emitting device 10 can achieve a proper positive aging effect, thereby improving the efficiency and working life of the light emitting device 10. For example, as shown in FIG. 8 and FIG. 16, the ratio of the number of hydrogen atoms to the number of metal atoms in the metal oxide in the electron transport layer 141 is controlled by the first functional layer 81 or the third functional part 83. The first functional layer 81 and the third functional part 83 will be described later.

[0133] The following describes the related content of the light emitting substrate 100 including the first functional layer 81.

[0134] In some embodiments, as shown in FIG. 8, the light emitting substrate 100 further includes: the first functional layer 81; the first functional layer 81 includes: a first sub-layer 811, the first sub-layer 811 is located on the side of the first selected electrode 1a away from the substrate 101, the first selected electrode 1a is one of the anode 11 and the cathode 15 relatively away from the substrate 101; in the first sub-layer 811, the ratio of the number of hydrogen atoms to the total number of atoms in the first sub-layer 811 is in the range of 0% to 10%.

[0135] For example, as shown in FIG. 8, the light emitting device 10 is a normal light emitting device, the first selected electrode 1a is the cathode 15, and the first sub-layer 811 is located on the side of the cathode 15 away from the substrate 101. In another example, the light emitting device 10 is an inverted light emitting device, the first selected electrode 1a is the anode 11, and the first sub-layer 811 is located on the side of the anode 11 away from the substrate 101, without being limited herein.

[0136] For example, the material of the first functional layer 81 (i.e., the material of the first sub-layer 811) includes at least one of aluminum trioxide, silicon dioxide, polymethyl methacrylate, and polytetrafluoroethylene.

[0137] For example, the first sub-layer 811 is formed by at least one of aluminum oxide, silicon dioxide, polymethyl methacrylate, and polytetrafluoroethylene, and the ratio of the number of hydrogen atoms to the total number of atoms in the first sub-layer 811 is 0%, 2%, 3%, 5%, 7%, 8%, 9%, or 10%, etc. without limitation.

[0138] For example, the ratio of the number of hydrogen atoms to the total number of atoms in the first sub-layer 811 is tested by infrared spectroscopy.

[0139] It should be noted that the first functional layer 81 is configured to block the transmission of hydrogen atoms, i.e., the first sub-layer 811 is configured to block the transmission of hydrogen atoms. For example, the ratio of the number of hydrogen atoms in the electron transport layer 141 to the number of metal atoms in the metal oxide can be in the range of 1:5 to 3:10 by means of hydrogenation treatment and / or by providing the second functional layer 82 (as shown in FIG. 15). By providing the first sub-layer 811, excessive hydrogen atoms can be blocked from continuing to transmit to the electron transport layer 141, so that the light-emitting device 10 maintains a suitable positive aging effect, thereby improving the stability of the light-emitting device 10.

[0140] For example, the light-emitting substrate 100 includes an encapsulation layer 40 located on the side of the first sub-layer 811 away from the substrate 101, and the first sub-layer 811 can block the transmission of hydrogen atoms in the encapsulation layer 40 to the electron transport layer 141, thereby effectively preventing the light-emitting device 10 from aging excessively. For details of the hydrogenation treatment, refer to the description of the preparation method of the light-emitting substrate, and for the description of the second functional layer 82 (as shown in FIG. 15), refer to the subsequent content, which will not be described here.

[0141] To illustrate that the hydrogenation treatment can cause the light-emitting device 10 to have a positive aging phenomenon, the following data is provided.

[0142] FIG. 9 is another current density curve of the light-emitting device 10, and FIG. 10 is another luminous intensity curve of the light-emitting device 10, wherein the structure of the light-emitting device 10 of Example 3 and Example 4 is as shown in FIG. 3, except that in Example 3, the light-emitting device 10 has not been subjected to hydrogenation treatment, and in Example 4, the light-emitting device 10 has been subjected to hydrogenation treatment.

[0143] As can be seen from FIG. 9 and FIG. 10, the current density and luminous intensity of the light-emitting device 10 of Example 4 subjected to hydrogenation treatment are significantly higher than those of Example 3 which has not been subjected to hydrogenation treatment. This illustrates that the hydrogenation treatment can have an aging effect on the light-emitting device 10.

[0144] To illustrate that the first sub-layer 811 can block the transmission of hydrogen atoms to enable the light-emitting device 10 to maintain a suitable positive aging effect, the following data is provided.

[0145] FIG. 11 is a current density curve of the light emitting device 10, and FIG. 12 is a current efficiency curve of the light emitting device 10, wherein the structure of the light emitting device 10 of Example 5 is shown in FIG. 8, and the light emitting device 10 of Example 6 is not provided with the first sub-layer 811 compared with the light emitting device 10 of Example 5. The light emitting device 10 of Example 5 and the light emitting device 10 of Example 6 are both subjected to hydrogenation treatment.

[0146] As shown in FIG. 11, the light emitting device 10 of Example 6 not provided with the first sub-layer 811 has a higher current density compared with Example 5 provided with the first sub-layer 811. However, as shown in FIG. 12, the light emitting device 10 of Example 6 not provided with the first sub-layer 811 has a lower current efficiency compared with Example 5 provided with the first sub-layer 811. It is illustrated that the provision of the first sub-layer 811 can block the hydrogen atoms of the encapsulation layer 40 from transmitting to the electron transport layer 141, so as to maintain the appropriate positive aging effect of the light emitting device 10, and improve the stability of the light emitting device 10.

[0147] In some embodiments, as shown in FIG. 13, the first functional layer 81 further comprises a second sub-layer 812, the second sub-layer 812 is located at the side of the second selected electrode 2a close to the substrate 101, and the second selected electrode 2a is one of the anode 11 and the cathode 15 relatively close to the substrate 101. In the second sub-layer 812, the ratio of the number of hydrogen atoms to the total number of atoms in the second sub-layer 812 ranges from 0% to 10%.

[0148] For example, as shown in FIG. 13, the light emitting device 10 is a normal light emitting device, the second selected electrode 2a is the anode 11, and the second sub-layer 812 is located at the side of the anode 11 close to the substrate 101. In another example, the light emitting device 10 is an inverted light emitting device, the second selected electrode 2a is the cathode 15, and the second sub-layer 812 is located at the side of the cathode 15 close to the substrate 101. It is not limited herein.

[0149] It is to be noted that the second sub-layer 812 is configured to block the transmission of hydrogen atoms. For example, as shown in FIG. 2, the driving circuit layer 20 comprises at least one insulating layer, the material of the insulating layer can be silicon nitride, and the second sub-layer 812 can block the transmission of hydrogen atoms of the insulating layer to the electron transport layer 141, so as to effectively prevent the light emitting device 10 from aging excessively and improve the stability of the light emitting device 10.

[0150] In some embodiments, as shown in FIG. 8, the material of the first functional layer 81 comprises at least one of aluminum trioxide and silicon dioxide, and the thickness of the first functional layer 81 ranges from 10 nm to 100 nm. That is, the size d1 of the first functional layer 81 in the first direction Y ranges from 10 nm to 100 nm. The first direction Y is a direction perpendicular to the substrate 101.

[0151] The material of the first functional layer 81 includes at least one of polymethyl methacrylate and polytetrafluoroethylene, and the thickness of the first functional layer 81 ranges from 500 nm to 2000 nm; that is, the size d1 of the first functional layer 81 in the first direction Y ranges from 500 nm to 2000 nm.

[0152] For example, the material of the first functional layer 81 includes an inorganic material, for example, the material of the first functional layer 81 includes at least one of aluminum oxide and silicon dioxide, and the size d1 of the first functional layer 81 in the first direction Y is 10 nm, 20 nm, 40 nm, 50 nm, 70 nm, 80 nm, 90 nm, or 100 nm, etc., which is not limited herein.

[0153] For example, the material of the first functional layer 81 includes an organic material, for example, the material of the first functional layer 81 includes at least one of polymethyl methacrylate and polytetrafluoroethylene, and the size d1 of the first functional layer 81 in the first direction Y is 500 nm, 600 nm, 700 nm, 900 nm, 1000 nm, 1200 nm, 1600 nm, or 2000 nm, etc., which is not limited herein.

[0154] The material of the first functional layer 81 includes at least one of aluminum oxide and silicon dioxide, and by setting the thickness of the first functional layer 81 to range from 10 nm to 100 nm, the first functional layer 81 can block the transmission of hydrogen atoms. The material of the first functional layer 81 includes at least one of polymethyl methacrylate and polytetrafluoroethylene, and by setting the thickness of the first functional layer 81 to range from 500 nm to 2000 nm, the first functional layer 81 can block the transmission of hydrogen atoms.

[0155] When the material of the first functional layer 81 includes at least one of aluminum oxide and silicon dioxide, the thickness of the first functional layer 81 is less than that when the material of the first functional layer 81 includes at least one of polymethyl methacrylate and polytetrafluoroethylene, because the forming process of the first functional layer 81 of different types of materials is different and the blocking effect on hydrogen atoms is different.

[0156] For example, the material of the first functional layer 81 includes at least one of aluminum oxide and silicon dioxide, and the first functional layer 81 is formed by atomic layer deposition, which has a higher density and a better blocking effect on hydrogen atoms, so the thickness of the first functional layer 81 is set to range from 10 nm to 100 nm. The density, also called the packing ratio or the maximum space utilization ratio, refers to the percentage of the volume occupied by atoms in a unit cell, that is, the ratio of the volume of atoms contained in the unit cell to the volume of the unit cell.

[0157] FIG. 14 is a scanning electron microscope image of the first functional layer 81, and the material of the first functional layer 81 is aluminum oxide. As can be seen from the image, the first functional layer 81 has a high density. Therefore, the first functional layer 81 formed of aluminum oxide can block the transmission of hydrogen atoms, effectively preventing the problem of over-aging of the light-emitting device 10.

[0158] For example, the material of the first functional layer 81 includes at least one of polymethyl methacrylate and polytetrafluoroethylene. The first functional layer 81 is formed by spin coating, blade coating, inkjet printing, or screen printing. The first functional layer 81 has a relatively weak blocking effect on hydrogen atoms. Therefore, the thickness of the first functional layer 81 is increased, and the thickness of the first functional layer 81 is set to be in a range of 500 nm to 2000 nm.

[0159] In some embodiments, as shown in FIG. 8, the material of the first functional layer 81 includes at least one of aluminum oxide and silicon dioxide. The density of the first functional layer 81 is in a range of 99.5% to 98%. The roughness of the first functional layer 81 is in a range of 1 nm to 2 nm.

[0160] It should be noted that the roughness here refers to the surface roughness Rms of the first functional layer 81. Rms is the average width of the profile unit, that is, the average value of the profile micro-unevenness distance in the sampling length.

[0161] For example, the density of the first functional layer 81 is 98%, 98.5%, 99%, or 99.5%. The density of the first functional layer 81 is set to be in a range of 99.5% to 98%. In this way, the first functional layer 81 has a high density, and the first functional layer 81 has a good blocking effect on hydrogen atoms.

[0162] For example, the roughness of the first functional layer 81 is 1 nm, 1.2 nm, 1.5 nm, 1.7 nm, or 2 nm. The roughness of the first functional layer 81 is set to be in a range of 1 nm to 2 nm. In this way, the first functional layer 81 has a small roughness, and the film layer on the side of the first functional layer 81 away from the substrate 101 has a good morphology, for example, a good continuity. The film layer on the side of the first functional layer 81 away from the substrate 101 has a good morphology, which can effectively prevent the film layer from cracking, thereby improving the water and oxygen blocking effect of the film layer and prolonging the service life of the light-emitting device 10.

[0163] In some embodiments, as shown in FIG. 15, the light-emitting substrate 100 further includes a second functional layer 82. The second functional layer 82 is located on the side of the first sub-layer 811 close to the first selected electrode 1a. In the second functional layer 82, the ratio of the number of hydrogen atoms to the total number of atoms in the second functional layer 82 is in a range of 20% to 40%.

[0164] As shown in FIG. 15, the light emitting device 10 is a normal light emitting device, the first selected electrode 1a is a cathode 15, and the cathode 15, the second functional layer 82 and the first sub-layer 811 are arranged away from the substrate 101.

[0165] As shown in FIG. 15, the light emitting device 10 is a normal light emitting device, the first selected electrode 1a is a cathode 15, and the cathode 15, the second functional layer 82 and the first sub-layer 811 are arranged away from the substrate 101.

[0166] As shown in FIG. 15, the light emitting device 10 is a normal light emitting device, the first selected electrode 1a is a cathode 15, and the cathode 15, the second functional layer 82 and the first sub-layer 811 are arranged away from the substrate 101.

[0167] For example, the material of the second functional layer 82 is silicon nitride, and the chemical formula of the silicon nitride is SiN. The proportion of the number of hydrogen atoms (denoted as H) in the silicon nitride can be tested by infrared spectroscopy. In the infrared spectrum, the absorption peak within the wave number range of 3300 cm -1 ~ 3500 cm -1 is the N-H absorption peak, the absorption peak within the wave number range of 2000 cm -1 ~ 2400 cm -1 is the Si-H absorption peak, and the absorption peak within the wave number range of 0 cm -1 ~ 1500 cm -1 is the Si-N absorption peak. The ratio of the sum of the N-H absorption peak area and the Si-H absorption peak area to the Si-N absorption peak area can be used to obtain the ratio of the number of hydrogen atoms in the second functional layer 82 to the total number of atoms in the second functional layer 82.

[0168] By setting the ratio of the number of hydrogen atoms in the second functional layer 82 to the total number of atoms in the second functional layer 82 to be within the range of 20% to 40%, the purpose of transmitting hydrogen atoms in the second functional layer 82 to the electron transport layer 141 can be achieved, so that the light emitting device 10 maintains a suitable positive aging effect. By arranging the first sub-layer 811, the hydrogen atoms in the film layer away from the substrate 101 side of the first sub-layer 811 are effectively prevented from being transmitted to the electron transport layer 141, so as to effectively prevent the light emitting device 10 from aging excessively and improve the stability of the light emitting device 10.

[0169] In some embodiments, as shown in FIG. 15, the thickness of the second functional layer 82 ranges from 400 nm to 600 nm. That is, the size d3 of the second functional layer 82 in the first direction Y ranges from 400 nm to 600 nm.

[0170] For example, the thickness of the second functional layer 82 is 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, or the like, which is not limited herein.

[0171] By setting the thickness of the second functional layer 82 ranging from 400 nm to 600 nm, the number of hydrogen atoms in the second functional layer 82 is controlled to be transmitted to the electron transport layer 141, so as to achieve the purpose of keeping the light emitting device 10 having a proper forward aging effect.

[0172] In some embodiments, as shown in FIG. 15, the light emitting substrate 100 further comprises an encapsulation layer 40 located on the side of the first sub-layer 811 away from the substrate 101. The encapsulation layer 40 can effectively prevent the moisture and oxygen in the external environment from entering the light emitting substrate 100, so as to solve the problem of shortening the service life of the light emitting substrate 100 due to the damage of the materials in the light emitting device 10 caused by the moisture and oxygen entering the light emitting substrate 100.

[0173] For example, the ratio of the number of hydrogen atoms in the encapsulation layer 40 to the total number of atoms in the encapsulation layer 40 is greater than the ratio of the number of hydrogen atoms in the first functional layer 81 to the total number of atoms in the first functional layer 81. For example, the ratio of the number of hydrogen atoms in the encapsulation layer 40 to the total number of atoms in the encapsulation layer 40 ranges from 20% to 40%.

[0174] For example, the thickness of the encapsulation layer 40 is 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, or 1000 nm, or the like, which is not limited herein. By setting the thickness of the encapsulation layer 40 ranging from 400 nm to 1000 nm, the encapsulation layer 40 can have a better effect of preventing the moisture and oxygen in the external environment from entering the light emitting substrate 100.

[0175] For example, the thickness of the encapsulation layer 40 is 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, or 1000 nm, or the like, which is not limited herein. By setting the thickness of the encapsulation layer 40 ranging from 400 nm to 1000 nm, the encapsulation layer 40 can have a better effect of preventing the moisture and oxygen in the external environment from entering the light emitting substrate 100.

[0176] The following describes the related content of the light emitting substrate 100 comprising the third functional layer 83.

[0177] In some embodiments, as shown in FIG. 5, the light-emitting substrate 100 further comprises: a cover plate 50 disposed opposite to the substrate 101, and a frame 60 located between the cover plate 50 and the substrate 101, the cover plate 50, the substrate 101 and the frame 60 form a closed cavity 70, and the plurality of light-emitting devices 10 are located in the cavity 70.

[0178] For example, the material of the frame 60 is acrylic resin.

[0179] The inventors found that: first, the existing acid adhesive has low viscosity and strong material flow, which makes it difficult to build a narrow frame structure, and the modification of the material of the frame 60 is difficult; second, due to the low glass transition temperature of the acid adhesive, the sealing effect of the light-emitting substrate 100 is affected, and since the amount of acid adhesive used is controlled by the size of the light-emitting device 10 and the sealing effect, if the amount of acid adhesive is increased to improve the sealing effect, the problem of excessive use of acid adhesive will occur, which will cause the light-emitting device 10 to be over-aged and produce black spots; third, the selection of acid adhesive is limited due to the sealing effect.

[0180] Based on this, as shown in FIG. 16, the light-emitting substrate 100 further comprises: a third functional part 83, in the orthographic projection to the substrate 101, the third functional part 83 is located within the boundary L1 of the frame 60 away from the cavity 70, and the material of the third functional part 83 comprises at least one of acrylic acid, isobutyric acid, saturated organic acid and N-N-dimethyl acrylamide.

[0181] For example, the material forming the third functional part 83 is acid adhesive, which is weakly acidic, for example, the pH of the acid adhesive ranges from 6 to 7.

[0182] For example, the viscosity of the acid adhesive is greater than or equal to 10,000 cP.

[0183] For example, the third functional part 83 is located within the boundary L1 of the frame 60 away from the cavity 70, so that the frame 60 has the effect of packaging the light-emitting substrate 100, and the third functional part 83 is configured to transmit hydrogen atoms from the third functional part 83 to the electron transport layer 141.

[0184] Through the arrangement of the frame 60 and the third functional part 83, the frame 60 has the effect of packaging the light-emitting substrate 100, and the third functional part 83 is used to transmit hydrogen atoms from the third functional part 83 to the electron transport layer 141, so that the amount of the third functional part 83 is not limited by the packaging effect of the light-emitting substrate 100, and the light-emitting device 10 can have a suitable positive aging effect to improve the efficiency and service life of the light-emitting device 10.

[0185] In some embodiments, as shown in FIG. 16, the material of the frame 60 comprises epoxy resin.

[0186] Exemplarily, the material of the glue frame 60 is a non-acid glue, and the pH range of the epoxy resin is 7-8.

[0187] Exemplarily, the viscosity of the epoxy resin is greater than or equal to 10,000 cP. The water vapor transmission rate (WVTR) of the epoxy resin is less than 100 g / (m 2 2·day). The WVTR represents the ability of the glue to transmit water vapor per unit area in a specified time.

[0188] Moreover, the epoxy resin is used to form the glue frame 60, so that the narrow-frame structure light-emitting substrate 100 can be constructed, and the light-emitting substrate 100 has a good packaging effect.

[0189] In some embodiments, as shown in FIG. 16, the ratio of the mass of the third functional part 83 to the light-emitting area S1 of the light-emitting substrate 100 is in the range of 0.125 g / cm 2 2-0.375 g / cm 2 2.

[0190] Exemplarily, as shown in FIGS. 2 and 16, the light-emitting substrate 100 includes a pixel definition layer 301 and a plurality of light-emitting devices 10, the pixel definition layer 301 is provided with a plurality of openings K, and the plurality of light-emitting devices 10 are arranged in the plurality of openings K one by one. The light-emitting area S1 of the light-emitting substrate 100 is the sum of the areas of the plurality of openings K of the pixel definition layer 301, that is, the sum of the effective light-emitting areas of the plurality of light-emitting devices 10. For example, in FIG. 16, the light-emitting substrate 100 includes three light-emitting devices 10, and the light-emitting areas of the three light-emitting devices 10 are area S11, area S12, and area S13, respectively. The light-emitting area S1 of the light-emitting substrate 100 is S11+S12+S13.

[0191] Exemplarily, the ratio of the mass of the third functional part 83 to the light-emitting area S1 of the light-emitting substrate 100 is 0.125 g / cm 2 2, 0.15 g / cm 2 2, 0.215 g / cm 2 2, 0.275 g / cm 2 2, 0.3 g / cm 2 2, 0.315 g / cm 2 2, or 0.375 g / cm 2 , without being limited here.

[0192] The ratio of the mass of the third functional part 83 to the light-emitting area S1 of the light-emitting substrate 100 is in the range of 0.125 g / cm 2 2-0.375 g / cm 2The third functional part 83 can be arranged to make the light emitting device 10 have a proper positive aging effect, so as to improve the efficiency and service life of the light emitting device 10.

[0193] In order to realize the third function of transmitting hydrogen atoms from the third functional part 83 to the electron transport layer 141, so as to make the light emitting device 10 have a proper positive aging effect, the ratio of the mass of the third functional part 83 to the light emitting area S1 of the light emitting substrate 100 is required to be in the range of 0.125 g / cm 2 ~ 0.375 g / cm 2 According to the requirement, the light emitting substrate 100 with the following structure is provided.

[0194] In some embodiments, as shown in FIG. 16 and FIG. 17, the third functional part 83 is located on the side of the frame 60 facing the cavity 70, and the third functional part 83 extends along the second direction T, wherein the second direction T is the extension direction of the frame 60 around the cavity 70.

[0195] For example, the third functional part 83 is located between the frame 60 and the plurality of light emitting devices 10, and the third functional part 83 can be in contact with the frame 60 or not in contact with the frame 60, which is not limited herein.

[0196] For example, in the orthogonal projection to the substrate 101, the frame 60 is square, and the third functional part 83 is arranged in a square shape; in another example, in the orthogonal projection to the substrate 101, the frame 60 is circular, and the third functional part 83 is arranged in a circular shape.

[0197] In some embodiments, as shown in FIG. 16 and FIG. 17, the size d5 of the third functional part 83 in the first direction Y is equal to or less than the size d6 of the frame 60 in the first direction Y, i.e. d5≤d6.

[0198] For example, as shown in FIG. 16, the size d5 of the third functional part 83 in the first direction Y is equal to the size d6 of the frame 60 in the first direction Y, i.e. d5=d6.

[0199] For example, as shown in FIG. 17, the size d5 of the third functional part 83 in the first direction Y is less than the size d6 of the frame 60 in the first direction Y, i.e. d5

[0200] For example, the size d6 of the frame 60 in the first direction Y is in the range of 10 μm ~ 40 μm.

[0201] By adjusting the size d5 of the third functional part 83 in the first direction Y, the amount of the material used to form the third functional part 83 can be flexibly adjusted, so as to control the amount of hydrogen atoms transmitted from the material used to form the third functional part 83 to the electron transport layer 141, thereby obtaining the light emitting device 10 with a proper positive aging effect, so as to improve the efficiency and service life of the light emitting device 10.

[0202] In some embodiments, as shown in FIG. 18, the third functional part 83 is located on the side of the glue frame 60 facing the cavity 70, and the third functional part 83 extends along the second direction T, wherein the third functional part 83 is arranged continuously along the second direction T.

[0203] That is, the third functional part 83 can be arranged in a ring shape along the second direction T.

[0204] In some embodiments, as shown in FIG. 19, the third functional part 83 includes a plurality of functional sub-parts 831 arranged at intervals along the second direction T.

[0205] By arranging the third functional part 83 to include a plurality of functional sub-parts 831, the amount of material used to form the third functional part 83 can be flexibly adjusted to control the amount of hydrogen atoms transmitted from the third functional part 83 to the electron transport layer 141, thereby obtaining a light-emitting device 10 with appropriate positive aging effect to improve the efficiency and service life of the light-emitting device 10.

[0206] In some examples, as shown in FIGS. 16-19, the material forming the glue frame 60 and the material forming the third functional part 83 are coated on the cover plate 50, and are connected to the substrate 101 by vacuum pressing, thereby realizing the construction of the structure of the light-emitting substrate 100.

[0207] For example, when coating the material forming the glue frame 60 and the material forming the third functional part 83, the distance between the two materials can be set to be greater than 1 mm, and after vacuum pressing, the glue frame 60 is in contact with the third functional part 83 or there is a distance between the glue frame 60 and the third functional part 83.

[0208] In some embodiments, as shown in FIGS. 20 and 21, in the orthographic projection onto the substrate 101, the third functional part 83 overlaps the glue frame 60.

[0209] In some examples, as shown in FIGS. 20 and 22, the side of the cover plate 50 facing the substrate 101 is provided with a first recess 91, and in the orthographic projection onto the substrate 101, the first recess 91 is located between the inner boundary L3 and the outer boundary L1 of the glue frame 60; the third functional part 83 is located in the first recess 91.

[0210] For example, the size d8 of the first recess 91 in the third direction X is smaller than the size d9 of the glue frame 60 in the third direction X, i.e., d8 < d9; wherein the third direction X is parallel to the substrate 101.

[0211] Exemplarily, the size d5 of the third functional part 83 in the first direction Y is smaller than the size d7 of the first groove 91 in the first direction Y, i.e., d5 < d7. By setting the size d5 of the third functional part 83 in the first direction Y to be smaller than the size d7 of the first groove 91 in the first direction Y, the material used to form the glue frame 60 can be filled into the first groove 91, so that the glue frame 60 has a better packaging effect.

[0212] In some examples, as shown in FIG. 22, the ratio of the size d7 of the first groove 91 in the first direction Y to the size d10 of the cover plate 50 in the first direction Y ranges from 3:5 to 3:7.

[0213] Exemplarily, the ratio of the size d7 of the first groove 91 in the first direction Y to the size d10 of the cover plate 50 in the first direction Y is 3:5, 3:6, or 3:7, etc., which is not limited herein.

[0214] For example, the size d10 of the cover plate 50 in the first direction Y ranges from 0.5 mm to 0.7 mm. The size d7 of the first groove 91 in the first direction Y is 0.3 mm.

[0215] By setting the ratio of the size d7 of the first groove 91 in the first direction Y to the size d10 of the cover plate 50 in the first direction Y to range from 3:5 to 3:7, it is ensured that the cover plate 50 still has sufficient toughness when the first groove 91 is arranged, so as to ensure the quality of the light-emitting substrate 100.

[0216] In some examples, as shown in FIG. 23, the third functional part 83 is located on the side of the cover plate 50 facing the substrate 101, and the glue frame 60 comprises a first glue part 61 and a second glue part 62 connected to each other, the first glue part 61 is located on the side of the third functional part 83 away from the cover plate 50, and the second glue part 62 is located on the side of the third functional part 83 away from the cavity 70.

[0217] Exemplarily, the material used to form the third functional part 83 is coated on the side of the cover plate 50 facing the substrate 101, and then the material used to form the glue frame 60 is coated on the side of the material used to form the third functional part 83 away from the cover plate 50 and on the side of the material used to form the third functional part 83 away from the cavity 70, and vacuum pressing is performed to obtain the light-emitting substrate 100. Alternatively, the material used to form the third functional part 83 is coated on the side of the cover plate 50 facing the substrate 101, and after the material is solidified, the third functional part 83 is formed, and then the material used to form the glue frame 60 is coated on the side of the third functional part 83 away from the cover plate 50, and vacuum pressing is performed. During the pressing process, the material used to form the glue frame 60 expands outward to form the second glue part 62, and the material used to form the glue frame 60 located on the side of the third functional part 83 away from the cover plate 50 forms the first glue part 61, thereby obtaining the light-emitting substrate 100.

[0218] In some examples, as shown in FIG. 21, the second glue part 62 is also located on the side of the third functional part 83 close to the cavity 70.

[0219] That is, the glue frame 60 covers the third functional part 83.

[0220] Exemplarily, the material for forming the third functional part 83 is coated on the side of the cover plate 50 close to the substrate 101, and then the material for forming the glue frame 60 is coated on the side of the material for forming the third functional part 83 away from the cover plate 50, the side of the material for forming the third functional part 83 away from the cavity 70, and the side of the material for forming the third functional part 83 close to the cavity 70, and vacuum compression is performed to obtain the light-emitting substrate 100. Alternatively, the material for forming the third functional part 83 is coated on the side of the cover plate 50 close to the substrate 101, and the material is solidified to form the third functional part 83, and then the material for forming the glue frame 60 is coated on the side of the third functional part 83 away from the cover plate 50, and vacuum compression is performed, and in the process of compression, the material for forming the glue frame 60 expands outward to form the second glue part 62, and the material for forming the glue frame 60 located on the side of the third functional part 83 away from the cover plate 50 forms the first glue part 61, to obtain the light-emitting substrate 100.

[0221] In some examples, as shown in FIG. 24, in the orthographic projection onto the substrate 101, the third functional part 83 overlaps with the glue frame 60, and the third functional part 83 is continuously arranged along the second direction T. That is, the third functional part 83 can be arranged in a ring shape along the second direction T.

[0222] In some examples, as shown in FIG. 25, in the orthographic projection onto the substrate 101, the third functional part 83 overlaps with the glue frame 60, and the third functional part 83 includes a plurality of functional sub-parts 831, and the plurality of functional sub-parts 831 are arranged at intervals along the second direction T.

[0223] Exemplarily, as shown in FIG. 20 and FIG. 25, when the third functional part 83 includes the plurality of functional sub-parts 831 and the third functional part 83 is located in the first groove 91, the first groove 91 includes a plurality of first sub-grooves 911 arranged at intervals along the second direction T, the plurality of functional sub-parts 831 are arranged one by one with the plurality of first sub-grooves 911, and one functional sub-part 831 is located in one first sub-groove 911.

[0224] Through the arrangement that the third functional part 83 includes the plurality of functional sub-parts 831, the amount of the material for forming the third functional part 83 can be flexibly adjusted to control the amount of hydrogen atoms transmitted from the material for forming the third functional part 83 to the electron transport layer 141, so as to obtain the light-emitting device 10 with appropriate positive aging effect, to improve the efficiency and service life of the light-emitting device 10.

[0225] In some examples, as shown in FIGS. 26 and 27, the cover plate 50 is provided with a second groove 92 on a side facing the substrate 101, and in the orthogonal projection onto the substrate 101, the second groove 92 is located in the light-emitting region Q1 of the light-emitting substrate 100. The third functional part 83 is located in the second groove 92.

[0226] For example, as shown in FIGS. 26 and 27, the light-emitting device 10 is a bottom-emitting light-emitting device, and the light-emitting direction E of the light-emitting device 10 is directed to the substrate 101. The arrangement of the third functional part 83 in the second groove 92 does not affect the emission of light of the light-emitting device 10.

[0227] In some examples, as shown in FIG. 26, the ratio of the size d11 of the second groove 92 in the first direction Y to the size d10 of the cover plate 50 in the first direction Y is in the range of 3:5 to 3:7.

[0228] For example, the ratio of the size d11 of the second groove 92 in the first direction Y to the size d10 of the cover plate 50 in the first direction Y is 3:5, 3:6, or 3:7, etc., which is not limited here.

[0229] For example, the size d10 of the cover plate 50 in the first direction Y is in the range of 0.5 mm to 0.7 mm. The size d11 of the second groove 92 in the first direction Y is 0.3 mm.

[0230] By arranging the ratio of the size d11 of the second groove 92 in the first direction Y to the size d10 of the cover plate 50 in the first direction Y in the range of 3:5 to 3:7, it is ensured that the cover plate 50 still has sufficient toughness even if the second groove 92 is arranged, so as to ensure the quality of the light-emitting substrate 100.

[0231] In some examples, as shown in FIG. 27, the second groove 92 includes a plurality of second sub-grooves 921, and the plurality of second sub-grooves 921 are arranged at intervals. The third functional part 83 includes a plurality of functional sub-parts 831, and each functional sub-part 831 is arranged in one second sub-groove 921.

[0232] By arranging the third functional part 83 to include a plurality of functional sub-parts 831, the amount of material used to form the third functional part 83 can be flexibly adjusted to control the amount of hydrogen atoms transmitted from the material used to form the third functional part 83 to the electron transport layer 141, so as to obtain a light-emitting device 10 with appropriate positive aging effect, thereby improving the efficiency and service life of the light-emitting device 10.

[0233] A preparation method of a light-emitting substrate is provided below, as shown in FIG. 28, the preparation method of the light-emitting substrate includes steps R1 and R2.

[0234] R1, as shown in FIG. 29 and FIG. 30, forming an initial film layer 10A of a plurality of light-emitting devices 10 on one side of the substrate 101, the initial film layer 10A comprising: an initial electron transport layer 141A.

[0235] Exemplarily, the material of the substrate 101 can be a rigid material, such as glass, to realize a rigid substrate display; or the material of the substrate 101 can also be a flexible material, such as polyimide (PI) or polyethylene glycol terephthalate (PET), to realize a flexible substrate display.

[0236] Exemplarily, as shown in FIG. 29, the initial film layer 10A of a plurality of light-emitting devices 10 on one side of the substrate 101 comprises: sequentially forming an anode 11, a quantum dot light-emitting layer 13, an initial electron transport layer 141A and a cathode 15 on one side of the substrate 101.

[0237] Exemplarily, as shown in FIG. 30, the initial film layer 10A of a plurality of light-emitting devices 10 on one side of the substrate 101 comprises: sequentially forming a cathode 15 and an initial electron transport layer 141A on one side of the substrate 101.

[0238] In some examples, as shown in FIG. 29 and FIG. 30, the preparation method of the light-emitting substrate further comprises: forming a first functional layer 81; the first functional layer 81 comprises: a first sub-layer 811, the first sub-layer 811 is located on the side of the first selected electrode 1a away from the substrate 101, the first selected electrode 1a is one of the anode 11 and the cathode 15 relatively away from the substrate 101; in the first sub-layer 811, the ratio of the number of hydrogen atoms to the total number of atoms in the first sub-layer 811 ranges from 0% to 10%.

[0239] R2, as shown in FIG. 29 and FIG. 30, processing the initial film layer 10A of a plurality of light-emitting devices 10 to make hydrogen atoms enter the initial electron transport layer 141A to form an electron transport layer 141, to obtain a light-emitting substrate 100.

[0240] Exemplarily, processing the initial film layer 10A of a plurality of light-emitting devices 10 comprises: treating the initial film layer in a water atmosphere, hydrogen plasma or hydrogen gas, which is referred to as hydrogen supplement treatment.

[0241] Exemplarily, the time range for hydrogen supplement treatment of the initial film layer 10A of a plurality of light-emitting devices 10 is 90s-180s.

[0242] Exemplarily, the time range for hydrogen supplement treatment is 90s, 100s, 110s, 120s, 130s, 140s, 150s, 160s, 170s or 180s, etc., which is not limited here.

[0243] To illustrate that the hydrogen supplement treatment time ranging from 90s to 180s can make the light emitting device 10 form a proper forward aging effect to improve the efficiency and working life of the light emitting device 10, the following data is provided.

[0244] FIG. 31 is a current density curve of the light emitting device 10 after different hydrogen supplement treatment time, and FIG. 32 is a current efficiency curve of the light emitting device 10 after different hydrogen supplement treatment time, wherein the structure of the light emitting device 10 is shown in FIG. 8.

[0245] As can be seen from FIG. 31 and FIG. 32, compared with the hydrogen supplement treatment time of 300s, the current density and current efficiency of the light emitting device 10 are higher when the hydrogen supplement treatment time ranges from 90s to 180s. That is, when the hydrogen supplement treatment time is increased to 300s, the current density and current efficiency of the light emitting device 10 will decrease.

[0246] One of the reasons why the current density and current efficiency of the light emitting device 10 will decrease when the hydrogen supplement treatment time exceeds 300s is that the hydrogen atoms can fill the oxygen vacancies in the lattice of the electron transport layer 141 or fill between the oxygen atoms and the metal atoms; on the one hand, the hydrogen atoms can provide n-type doping to the electron transport layer 141 as shallow donors to increase the concentration of n-type carriers and improve the conductivity of the electron transport layer 141; on the other hand, the hydrogen atoms can also passivate the defects in the lattice of the electron transport layer 141; however, when the amount of hydrogen atoms is too large, the doping amount of hydrogen atoms will be too large, which will cause the conductivity of the electron transport layer 141 to be too large, and even cause the electron transport layer 141 to lose the semiconductor characteristics and become a conductor, which will cause the carrier injection of the light emitting device 10 to be seriously unbalanced, resulting in the problems of the decrease of the current density and current efficiency of the light emitting device 10.

[0247] According to the above steps R1 and R2, the following examples of the preparation method of the light emitting substrate are provided.

[0248] In some examples, as shown in FIG. 8 and FIG. 29, the specific steps of the preparation method of the light emitting substrate include V1-V8.

[0249] V1, as shown in FIG. 29, an anode 11 is formed on one side of a substrate 101.

[0250] For example, the anode 11 is formed by a deposition process.

[0251] For example, the anode 11 can be a transparent electrode, and at this time, the material of the anode 11 can be indium tin oxide or fluorine-doped tin dioxide conductive glass, etc. In yet other examples, the anode 11 can be an opaque electrode, and at this time, the material of the anode 11 can be a metal material, such as aluminum or silver, etc.

[0252] V2. As shown in FIG. 29, the hole transport unit 12 is formed on the side of the anode 11 away from the substrate 101.

[0253] For example, the hole transport unit 12 includes a hole injection layer and a hole transport layer. For example, the hole injection layer is formed on the side of the anode 11 away from the substrate 101, and the hole transport layer is formed on the side of the hole injection layer away from the substrate 101.

[0254] For example, the hole injection layer and the hole transport layer are formed by a deposition process.

[0255] For example, the material of the hole injection layer can be an organic material, such as poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate); or the material of the hole injection layer can also be an inorganic oxide, such as molybdenum oxide, etc.

[0256] For example, the material of the hole transport layer can be an organic material, such as poly(N-vinylcarbazole), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-buty lphenyl) diphenyl amine)], N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, or 4,4',4"-tris(N-carbazolyl)triphenylamine, etc.; or the material of the hole transport layer can also be an inorganic oxide, such as nickel oxide or vanadium oxide, etc.

[0257] V3. As shown in FIG. 29, the quantum dot light-emitting layer 13 is formed on the side of the hole transport unit 12 away from the substrate 101.

[0258] For example, the quantum dot light-emitting layer 13 is formed by a deposition process.

[0259] For example, the material of the quantum dot light-emitting layer 13 includes a quantum dot light-emitting material. For example, the quantum dot light-emitting material includes at least one of CdS, CdSe, CdTe, ZnSe, InP, PbS, CuInS2, ZnO, CsPbCl3, CsPbBr3, CsPhI3, CdS / ZnS, CdSe / ZnS, ZnSe, InP / ZnS, PbS / ZnS, InAs, InGaAs, InGaN, GaNk, ZnTe, Si, Ge, C, etc. For example, the quantum dot light-emitting material is CdS / ZnS, CdSe / ZnS, InP / ZnS, or PbS / ZnS, which means that the quantum dot light-emitting material has a core-shell structure, in which one material is the material of the core and the other material is the material of the shell. For example, the quantum dot light-emitting material is CdS / ZnS, which means that the material of the core of the quantum dot is CdS and the material of the shell is ZnS.

[0260] In other embodiments, the quantum dot light emitting material can be other nano-scale materials, such as nanorods, nanosheets, etc. The composition of the other nano-scale materials can include at least one of CdS, CdSe, CdTe, ZnSe, InP, PbS, CuInS2, ZnO, CsPbCl3, CsPbBr3, CsPhI3, CdS / ZnS, CdSe / ZnS, ZnSe, InP / ZnS, PbS / ZnS, InAs, InGaAs, InGaN, GaNk, ZnTe, Si, Ge, C, etc.

[0261] V4. As shown in FIG. 29, an initial electron transport layer 141A is formed on the side of the quantum dot light emitting layer 13 away from the substrate 101.

[0262] For example, the material of the initial electron transport layer 141A can be zinc oxide or magnesium zinc oxide, etc. Here, the zinc oxide or magnesium zinc oxide can be nanoparticles or thin films prepared by a sputtering process.

[0263] V5. As shown in FIG. 29, a cathode 15 is formed on the side of the initial electron transport layer 141A away from the substrate 101, wherein the anode 11, the quantum dot light emitting layer 13, the initial electron transport layer 141A, and the cathode 15 form an initial film layer 10A of the light emitting device 10.

[0264] For example, the cathode 15 is formed by evaporation, and the material of the cathode 15 can be a metal material or a metal alloy, such as aluminum, silver, gold, magnesium, calcium, ytterbium, indium, lithium, potassium, sodium, tin, titanium, lead, samarium, or yttrium, etc., or a magnesium-silver alloy, a ytterbium-gold alloy, a ytterbium-silver alloy, a lithium-aluminum alloy, or a lithium-calcium-magnesium alloy, etc.

[0265] For example, the cathode 15 is formed by a magnetron sputtering process, and the material of the cathode 15 can be a metal oxide, such as indium tin oxide or indium zinc oxide, etc.

[0266] For example, the size d2 of the cathode 15 in the first direction Y is 10 nm, 20 nm, 30 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, or 100 nm, etc., which is not limited herein.

[0267] V6. As shown in FIG. 29, the initial film layer 10A of the light emitting device 10 is subjected to a hydrogen supplement treatment to make hydrogen atoms enter the initial electron transport layer 141A to form an electron transport layer 141, thereby obtaining a plurality of light emitting devices 10.

[0268] For example, the hydrogen supplement treatment includes treating the initial film layer 10A of the light emitting device 10 with water, hydrogen plasma, or hydrogen gas.

[0269] For example, the initial film layer 10A of the light emitting device 10 is treated by using a water atmosphere, and the specific steps include: placing the initial film layer 10A of the light emitting device 10 in an environment with a humidity of 1% to 40% for 0.5 hours to 2 hours, so that hydrogen atoms enter the initial electron transport layer 141A to form the electron transport layer 141.

[0270] For example, the initial film layer 10A of the light emitting device 10 is treated by using a hydrogen plasma, and the specific steps include: the flow rate of hydrogen is 500 sccm to 1500 sccm, the pressure is 800 mtorr to 1200 mtorr, the power is 500 W to 1000 W, and the treatment time is 60 s to 300 s, so that hydrogen atoms enter the initial electron transport layer 141A to form the electron transport layer 141.

[0271] In other examples, a mixed gas of nitrogen and hydrogen or a mixed gas of argon and hydrogen can also be used to treat the initial film layer 10A of the light emitting device 10, so that hydrogen atoms enter the initial electron transport layer 141A to form the electron transport layer 141.

[0272] For example, the initial film layer 10A of the light emitting device 10 is treated by using hydrogen, and the specific steps include: treating the initial film layer 10A of the light emitting device 10 in an atmosphere with a temperature of 80°C to 200°C by using hydrogen, and the treatment time is 10 minutes to 200 minutes, so that hydrogen atoms enter the initial electron transport layer 141A to form the electron transport layer 141.

[0273] V7, as shown in FIG. 29, a first sub-layer 811 of the first functional layer 81 is formed on the side of the cathode 15 away from the substrate 101.

[0274] For example, the first sub-layer 811 is formed by using an atomic layer deposition method, and the material of the first sub-layer 811 includes at least one of aluminum oxide and silicon dioxide. The size d1 of the first sub-layer 811 in the first direction Y is 10 nm to 100 nm.

[0275] For example, the first sub-layer 811 is formed by using a spin coating method, a blade coating method, an inkjet printing method, or a screen printing method, and the material of the first sub-layer 811 includes at least one of polymethyl methacrylate and polytetrafluoroethylene. The size d1 of the first sub-layer 811 in the first direction Y is 500 nm to 2000 nm.

[0276] V8, as shown in FIG. 8, a packaging layer 40 is formed on the side of the first sub-layer 811 away from the substrate 101, to obtain a light emitting substrate 100.

[0277] For example, the packaging layer 40 is formed by using a deposition process.

[0278] Through the above steps V1-V8, the light-emitting substrate 100 including the upright light-emitting device is formed, the light-emitting device 10 includes the first sub-layer 811, and the hydrogen supplement treatment is performed on the electron transport layer 141 of the light-emitting device 10, so that the ratio of hydrogen atoms to metal atoms in the metal oxide of the electron transport layer 141 ranges from 1:5 to 3:10, so that the light-emitting device 10 achieves a suitable positive aging effect, so as to improve the efficiency and service life of the light-emitting device 10. The first sub-layer 811 can block too many hydrogen atoms from continuing to transmit to the electron transport layer 141, so that the light-emitting device 10 maintains a suitable positive aging effect, so as to improve the stability of the light-emitting device 10.

[0279] In other examples, as shown in FIG. 30, the specific steps of the preparation method of the light-emitting substrate include U1-U6.

[0280] U1, as shown in FIG. 30, the cathode 15 is formed on one side of the substrate 101.

[0281] For the formation of the cathode 15, refer to the content of step V5, which will not be repeated here.

[0282] U2, as shown in FIG. 30, the initial electron transport layer 141A is formed on the side of the cathode 15 away from the substrate 101, wherein the cathode 15 and the initial electron transport layer 141A are the initial film layer 10A of the light-emitting device 10.

[0283] For the formation of the initial electron transport layer 141A, refer to the content of step V4, which will not be repeated here.

[0284] U3, as shown in FIG. 30, the initial film layer 10A of the light-emitting device 10 is subjected to hydrogen supplement treatment, so that hydrogen atoms enter the initial electron transport layer 141A to form the electron transport layer 141.

[0285] For example, the hydrogen supplement treatment includes treating the initial film layer 10A of the light-emitting device 10 with water, hydrogen plasma or hydrogen gas.

[0286] For the hydrogen supplement treatment, refer to the content of step V6, which will not be repeated here.

[0287] U4, as shown in FIG. 30, the quantum dot light-emitting layer 13, the hole transport unit 12 and the anode 11 are sequentially formed on the side of the electron transport layer 141 away from the substrate 101, to obtain the light-emitting device 10.

[0288] For the formation of the quantum dot light-emitting layer 13, refer to the content of step V3, which will not be repeated here.

[0289] For the formation of the hole transport unit 12, refer to the content of step V2, which will not be repeated here.

[0290] The forming of the anode 11 is described in the step V1, which will not be repeated here.

[0291] U5, as shown in FIG. 30, a first sub-layer 811 is formed on the side of the anode 11 away from the substrate 101.

[0292] The forming of the first sub-layer 811 is described in the step V7, which will not be repeated here.

[0293] U6, as shown in FIG. 30, a packaging layer 40 is formed on the side of the first sub-layer 811 away from the substrate 101, obtaining the light-emitting substrate 100.

[0294] The light-emitting substrate 100 including the inverted light-emitting device is formed through the above steps U1-U6. The light-emitting device 10 includes the first sub-layer 811, and the hydrogenation treatment is performed on the electron transport layer 141 of the light-emitting device 10, so that the ratio of the hydrogen atoms to the metal elements in the metal oxide of the electron transport layer 141 ranges from 1:5 to 3:10, so that the light-emitting device 10 achieves a proper positive aging effect, so as to improve the efficiency and service life of the light-emitting device 10. The first sub-layer 811 can block too many hydrogen atoms from continuing to transmit to the electron transport layer 141, so that the light-emitting device 10 maintains a proper positive aging effect, so as to improve the stability of the light-emitting device 10.

[0295] Another method for preparing a light-emitting substrate is provided below.

[0296] In some embodiments, as shown in FIG. 16 and FIG. 33, the light-emitting substrate 100 includes a cover plate 50 and a rubber frame 60. The cover plate 50 is arranged opposite to the substrate 101, and the rubber frame 60 is located between the cover plate 50 and the substrate 101. The cover plate 50, the substrate 101 and the rubber frame 60 enclose a closed cavity 70, and a plurality of light-emitting devices 10 are located in the cavity 70.

[0297] Exemplarily, the method for preparing a light-emitting substrate includes steps W1-W3.

[0298] W1, as shown in FIG. 34, a plurality of light-emitting devices 10 are formed on one side of the substrate 101.

[0299] The substrate 101 is described in the step R1, which will not be repeated here.

[0300] Exemplarily, each of the plurality of light-emitting devices 10 includes an anode 11, a quantum dot light-emitting layer 13, an electron transport layer 141 and a cathode 15 stacked on one side of the substrate 101.

[0301] The anode 11, the quantum dot light-emitting layer 13 and the cathode 15 are described above, which will not be repeated here.

[0302] The light emitting device 10 can be a normal light emitting device or an inverted light emitting device, and is not limited herein.

[0303] Exemplarily, the material of the electron transport layer 141 can be zinc oxide or magnesium zinc oxide, etc. Herein, the zinc oxide or magnesium zinc oxide can be nanoparticles or thin films prepared by a sputtering process.

[0304] W2, as shown in FIG. 34, an initial glue frame 601 and an initial third functional part 803 are formed on one side of the cover plate 50, in the orthographic projection to the cover plate 50, the initial third functional part 803 is located within the outer boundary L2 of the initial glue frame 601, and the material of the initial third functional part 803 comprises at least one of acrylic acid, isobutyric acid, saturated organic acid and N-N-dimethyl acrylamide.

[0305] Exemplarily, the material forming the initial glue frame 601 is epoxy resin, and the pH range of the epoxy resin is 7-8.

[0306] Exemplarily, the pH range of the material forming the initial third functional part 803 is 6-7.

[0307] Exemplarily, the initial glue frame 601 and the initial third functional part 803 are formed by a coating process.

[0308] W3, as shown in FIGS. 16 and 34, the cover plate 50 and the substrate 101 are pressed together, and the side of the cover plate 50 provided with the initial glue frame 601 and the initial third functional part 803 faces the substrate 101, the initial glue frame 601 forms the glue frame 60, the initial third functional part 803 forms the third functional part 83, the glue frame 60, the cover plate 50 and the substrate 101 enclose to form a closed cavity 70, and a plurality of light emitting devices 10 are located in the cavity 70 to obtain a light emitting substrate 100.

[0309] Exemplarily, the cover plate 50 and the substrate 101 are pressed together under vacuum conditions.

[0310] The light emitting substrate 100 comprising the glue frame 60 and the third functional part 83 is formed through the above steps W1-W3, the glue frame 60 has the effect of packaging the light emitting substrate 100, and the third functional part 83 is used for transmitting hydrogen atoms from the third functional part 83 to the electron transport layer 141, so that the use amount of the third functional part 83 is not limited by the packaging effect of the light emitting substrate 100, and the light emitting device 10 can have a suitable forward aging effect to improve the efficiency and working life of the light emitting device 10.

[0311] The above merely provides the specific implementation of the present disclosure, but the protection scope of the present disclosure is not limited thereto, any person skilled in the art can think of the changes or replacements within the technical range disclosed by the present disclosure, which should be covered in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

1. A light-emitting substrate, comprising: a substrate; a plurality of light-emitting devices on one side of the substrate; each of the plurality of light-emitting devices comprising: an anode, a quantum dot light-emitting layer, an electron transport layer and a cathode stacked on one side of the substrate; wherein the material of the electron transport layer comprises a metal oxide; the electron transport layer further comprises hydrogen atoms; and the ratio of the number of hydrogen atoms to the number of metal atoms in the metal oxide in the electron transport layer ranges from 1:5 to 3:

10.

2. The light-emitting substrate of claim 1, further comprising: a first functional layer; the first functional layer comprising: a first sub-layer on the side of a first selected electrode away from the substrate, the first selected electrode being one of the anode and the cathode relatively away from the substrate; in the first sub-layer, the ratio of the number of hydrogen atoms to the total number of atoms in the first sub-layer ranges from 0% to 10%.

3. The light-emitting substrate of claim 2, wherein, the first functional layer further comprising: a second sub-layer on the side of a second selected electrode close to the substrate, the second selected electrode being one of the anode and the cathode relatively close to the substrate; in the second sub-layer, the ratio of the number of hydrogen atoms to the total number of atoms in the second sub-layer ranges from 0% to 10%.

4. The light-emitting substrate according to claim 2 or 3, wherein the material of the first functional layer comprising at least one of aluminum oxide, silicon dioxide, polymethyl methacrylate and polytetrafluoroethylene.

5. The light-emitting substrate according to any one of claims 2 to 4, wherein the material of the first functional layer comprising at least one of aluminum oxide and silicon dioxide, the thickness of the first functional layer ranging from 10 nm to 100 nm; or the material of the first functional layer comprising at least one of polymethyl methacrylate and polytetrafluoroethylene, the thickness of the first functional layer ranging from 500 nm to 2000 nm.

6. The light-emitting substrate according to any one of claims 2 to 5, wherein the material of the first functional layer comprising at least one of aluminum oxide and silicon dioxide, the density of the first functional layer ranging from 98% to 99.5%, and / or the roughness of the first functional layer ranging from 1 nm to 2 nm.

7. The light-emitting substrate according to any one of claims 2 to 6, further comprising: a second functional layer on the side of the first sub-layer close to the first selected electrode; in the second functional layer, the ratio of the number of hydrogen atoms to the total number of atoms in the second functional layer ranges from 20% to 40%.

8. The light-emitting substrate of claim 7, wherein, the material of the second functional layer comprising at least one of silicon nitride, silicon oxide, silicon oxynitride and silicon carbonitride.

9. The light-emitting substrate according to claim 7 or 8, wherein the thickness of the second functional layer ranging from 400 nm to 600 nm.

10. The light-emitting substrate according to any one of claims 2 to 9, wherein the light-emitting substrate further comprising: an encapsulation layer on the side of the first sub-layer away from the substrate.

11. The light-emitting substrate of claim 10, wherein, the ratio of the number of hydrogen atoms to the total number of atoms in the encapsulation layer being greater than the ratio of the number of hydrogen atoms to the total number of atoms in the first functional layer.

12. The light-emitting substrate according to claim 10 or 11, wherein the encapsulation layer comprising: at least one inorganic layer, or two inorganic layers and an organic layer between the two inorganic layers; the material of the inorganic layer comprising at least one of silicon carbide, silicon oxide and silicon oxynitride; the material of the organic layer comprising at least one of acrylic, polyimide and polyamide; The encapsulation layer has a thickness ranging from 400 nm to 1000 nm.

13. The light emitting substrate of claim 1, further comprising: A cover plate and a glue frame, the cover plate is arranged opposite to the substrate, the glue frame is located between the cover plate and the substrate, and the glue frame, the cover plate and the substrate enclose a closed cavity, and a plurality of the light emitting devices are located in the cavity; The light emitting substrate further comprises a third functional part, in the orthographic projection to the substrate, the third functional part is located within the boundary of the glue frame away from the cavity, and the material of the third functional part comprises at least one of acrylic acid, isobutyric acid, saturated organic acid and N-N-dimethyl acrylamide.

14. The light-emitting substrate of claim 13, wherein, The ratio of the mass of the third functional part to the light emitting area of the light emitting substrate ranges from 0.125 g / cm 2 to 0.375 g / cm 2 .

15. The light-emitting substrate according to claim 13 or 14, wherein The third functional part is located on the side of the glue frame facing the cavity, and the third functional part extends along a second direction; wherein the second direction is the extension direction of the glue frame around the cavity.

16. The light-emitting substrate of claim 15, wherein, The size of the third functional part in the first direction is equal to or less than the size of the glue frame in the first direction; the first direction is the direction perpendicular to the substrate.

17. The light-emitting substrate according to claim 13 or 14, wherein In the orthographic projection to the substrate, the third functional part overlaps with the glue frame.

18. The light-emitting substrate of claim 17, wherein, The side of the cover plate facing the substrate is provided with a first groove, in the orthographic projection to the substrate, the first groove is located between the inner boundary and the outer boundary of the glue frame; The third functional part is located in the first groove.

19. The light-emitting substrate of claim 18, wherein, The size of the third functional part in the first direction is less than the size of the first groove in the first direction; the first direction is the direction perpendicular to the substrate.

20. The light-emitting substrate of claim 19, wherein, The ratio of the size of the first groove in the first direction to the size of the cover plate in the first direction ranges from 3:5 to 3:

7.

21. The light-emitting substrate of claim 17, wherein, The third functional part is located on the side of the cover plate facing the substrate, the glue frame comprises a first glue part and a second glue part connected, the first glue part is located on the side of the third functional part away from the cover plate, and the second glue part is located on the side of the third functional part away from the cavity.

22. The light-emitting substrate of claim 21, wherein, The second glue part is also located on the side of the third functional part close to the cavity.

23. The light emitting substrate according to any one of claims 15-22, wherein, The third functional part is continuously arranged along the second direction; or, The third functional part comprises a plurality of functional subparts, and the plurality of functional subparts are arranged at intervals along the second direction.

24. The light-emitting substrate according to claim 13 or 14, wherein The side of the cover plate facing the substrate is provided with a second groove, in the orthographic projection to the substrate, the second groove overlaps with the light emitting area of the light emitting substrate; The third functional part is located in the second groove.

25. The light-emitting substrate of claim 24, wherein, The ratio of the size of the second groove in the first direction to the size of the cover plate in the first direction ranges from 3:5 to 3:

7.

26. The light-emitting substrate according to claim 24 or 25, wherein The second groove comprises a plurality of second subgrooves, and the plurality of second subgrooves are arranged at intervals, and the third functional part comprises a plurality of functional subparts, and each functional subpart is arranged in one second subgroove.

27. The light-emitting substrate according to any one of claims 13 to 26, wherein The material of the glue frame comprises epoxy resin.

28. A preparation method of a light emitting substrate, comprising: forming an initial film layer of a plurality of light emitting devices on one side of a substrate, the initial film layer comprising an initial electron transport layer; The initial film layer of the plurality of light emitting devices is processed to make hydrogen atoms enter the initial electron transport layer to form an electron transport layer, to obtain a light emitting substrate.

29. The method of claim 28, wherein the light-emitting substrate is prepared by a method comprising: The processing of the initial film layer of the plurality of light emitting devices comprises processing the initial film layer with a water atmosphere, hydrogen plasma or hydrogen gas.

30. The method of producing a light emitting substrate according to claim 29, wherein, The processing of the initial film layer of the plurality of light emitting devices is performed for a time ranging from 90s to 180s.

31. The method of producing a light-emitting substrate according to any one of claims 28 to 30, wherein The forming of the initial film layer of the plurality of light emitting devices on one side of the substrate comprises: forming, on one side of the substrate, an anode, a quantum dot light emitting layer, an initial electron transport layer and a cathode in sequence; or forming, on one side of the substrate, a cathode and an initial electron transport layer in sequence.

32. The method of claim 28-31, further comprising: forming a first functional layer; The first functional layer comprises a first sub-layer, the first sub-layer being located on a side of a first selected electrode away from the substrate, the first selected electrode being one of the anode and the cathode that is relatively farther away from the substrate, and in the first sub-layer, a ratio of a number of the hydrogen atoms to a total number of atoms in the first sub-layer ranges from 0% to 10%.

33. A method for manufacturing a light emitting substrate, comprising: forming a plurality of light emitting devices on one side of a substrate; forming an initial glue frame and an initial third functional part on one side of a cover plate, in a direct projection onto the cover plate, the initial third functional part being located within an outer boundary of the initial glue frame, and a material of the initial third functional part comprising at least one of acrylic acid, isobutyric acid, a saturated organic acid and N-N-dimethyl acrylamide; pressing the cover plate and the substrate, one side of the cover plate provided with the initial glue frame and the initial third functional part being directed towards the substrate, the initial glue frame forming a glue frame, the initial third functional part forming a third functional part, the glue frame, the cover plate and the substrate enclosing a closed cavity, the plurality of light emitting devices being located in the cavity, to obtain a light emitting substrate.

34. A light emitting device comprising: a driving chip and the light emitting substrate as claimed in any one of claims 1 to 27, the driving chip being used to drive the light emitting substrate to emit light.

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