Wiring board, manufacturing method for wiring board, and semiconductor package

Abstract

Provided is a wiring board in which chipping is reduced and the occurrence of cracks in an insulating resin layer can be reduced. A wiring board (110) comprises: an inorganic substrate (10) containing glass; one or two or more insulating resin layers (21, 22) disposed so as to cover at least a portion of the inorganic substrate (10) containing glass; and a wiring part (3) disposed on the surface of at least one of the inorganic substrate (10) containing glass or the insulating resin layers (21, 22). The arithmetic surface roughness Sa of the end face of at least one layer among the insulating resin layers (21, 22) is 0.05 μｍ or more and 0.20 μｍ or less.

Description

Wiring board, method for manufacturing a wiring board, and semiconductor package

[0001] This disclosure relates to a wiring board, a method for manufacturing a wiring board, and a semiconductor package.

[0002] In recent years, glass interposers, which use glass plates as the substrate for printed circuit boards, have been developed as a method for increasing the density of semiconductor devices. In the general manufacturing process of glass interposers, via holes are formed through the glass plate, and plating layers are formed inside the via holes and on both sides of the glass plate to form through electrodes and wiring. Subsequently, insulating parts and vias and wiring parts for interlayer connections are formed on both sides of the glass plate, and the lamination process is repeated until the desired number of wiring parts are reached. Through vias enable high-density mounting.

[0003] To date, resin compositions comprising (A) epoxy resin, (B) elastomer, (C) magnesium hydroxide surface-treated with an alkoxysilane compound, and (D) silica have been reported (see, for example, Patent Document 1).

[0004] Japanese Patent Publication No. 2019-048952

[0005] One embodiment of the present disclosure aims to provide a wiring board that reduces chipping and reduces the occurrence of cracks in the insulating resin layer.

[0006] A wiring board according to one embodiment of the present disclosure comprises an inorganic substrate including glass, one or more insulating resin layers arranged to cover at least a portion of the inorganic substrate including glass, and a wiring portion arranged on at least one surface of the inorganic substrate including glass and the insulating resin layer, wherein the arithmetic surface roughness Sa of the end face of at least one of the insulating resin layers is 0.05 μm or more and 0.20 μm or less.

[0007] According to one embodiment of this disclosure, it is possible to provide a wiring board that reduces chipping and reduces the occurrence of cracks in the insulating resin layer.

[0008] Figure 1 is a cross-sectional view showing an example of a wiring board according to the first embodiment. Figure 2 is a schematic diagram showing an example of a wiring board according to the second embodiment. Figure 3 is a cross-sectional view showing an example of a laminated substrate for manufacturing a wiring board according to the first embodiment. Figure 4 is a schematic diagram showing an example of a laminated substrate for manufacturing a wiring board according to the second embodiment. Figure 5 is a diagram illustrating the procedure for measuring the peel strength of an inorganic substrate containing glass and an insulating resin layer.

[0009] The embodiments for implementing this disclosure will be described below with reference to the drawings. In each drawing, identical or similar components will be denoted by the same reference numeral, and their descriptions may be omitted. In the specification, the "~" indicating a numerical range means that the numbers written before and after it are included as the lower and upper limits. The numerical range includes the rounded range.

[0010] (Wiring board) The wiring board of this embodiment is a wiring board having an inorganic substrate including glass, one or more insulating resin layers arranged to cover at least a part of the inorganic substrate including glass, and wiring portions arranged on at least one surface of the inorganic substrate including glass and the insulating resin layer, and is a wiring board formed by making individual pieces of a laminated substrate, and further includes other members such as a cover layer as necessary.

[0011] The arithmetic surface roughness Sa of the end face of at least one of the insulating resin layers is 0.05 μm or more and 0.20 μm or less.

[0012] (Laminated Substrate) The laminated substrate for manufacturing the wiring substrate of this embodiment is a laminated substrate having a plurality of wiring substrates, each having an inorganic substrate containing glass, one or more insulating resin layers arranged to cover at least a part of the inorganic substrate containing glass, and wiring portions arranged on at least one surface of the inorganic substrate containing glass and the insulating resin layers, and further including other members such as a cover layer as necessary.

[0013] When manufacturing wiring boards such as glass interposers, if the resin composition described in Patent Document 1 is used, stress is generated inside the laminated substrate during laminate formation due to the difference in thermal expansion coefficients between the substrate, the insulating resin layer, and the wiring portion. If chipping occurs in the insulating resin layer due to subsequent dicing, then performing mechanical fracture such as dicing may generate microcracks originating from within the insulating resin layer, between insulating resin layers, or between the insulating resin layer and the inorganic substrate containing glass, and these microcracks may propagate to the resin layer, copper layer, and substrate. Furthermore, even if microcracks do not occur after dicing, there is a problem that microcracks may be generated in the individualized wiring boards due to thermal cycling, high temperature and high humidity environments, etc., originating from within the insulating resin layer, between insulating resin layers, or between the insulating resin layer and the inorganic substrate containing glass, and cracks may occur in the insulating resin layer.

[0014] The present inventors have diligently studied the problems of the prior art and, as a result of their efforts to solve the aforementioned problems, have found that a wiring board having an inorganic substrate containing glass, one or more insulating resin layers arranged to cover at least a part of the inorganic substrate containing glass, and a wiring portion arranged on at least one surface of the inorganic substrate containing glass and the insulating resin layer, wherein the arithmetic surface roughness Sa of the end face of at least one of the insulating resin layers is 0.05 μm or more and 0.20 μm or less, thereby reducing chipping and reducing the occurrence of cracks in the insulating resin layer, and have completed the present invention.

[0015] Referring to Figure 1, a wiring board according to one embodiment will be described. The wiring board 110 shown in Figure 1 has an inorganic substrate 10 including glass, with one insulating resin layer 2 on each surface, and comprises the inorganic substrate 10 including glass, an insulating resin layer 21 disposed to cover at least a part of the first surface of the inorganic substrate 10 including glass, an insulating resin layer 22 disposed to cover at least a part of the second surface of the inorganic substrate 10 including glass, a wiring portion 3 disposed on at least one surface of the inorganic substrate 10 including glass and the insulating resin layer 2, and connection terminals 4 for electrically connecting to an external semiconductor chip or substrate.

[0016] Referring to Figure 2, a wiring board according to one embodiment will be described. The wiring board 210 shown in Figure 2 has two or more insulating resin layers 2 on each surface of an inorganic substrate 10 including glass, and comprises an inorganic substrate 10 including glass, insulating resin layers 211, 212 disposed to cover at least a part of the first surface of the inorganic substrate 10 including glass, insulating resin layers 221, 222 disposed to cover at least a part of the second surface of the inorganic substrate 10 including glass, wiring portions 3 disposed on at least one surface of the inorganic substrate 10 including glass and the insulating resin layers 2, and connection terminals 4 for electrically connecting to an external semiconductor chip or substrate.

[0017] Referring to Figures 3 and 4, a laminated substrate for manufacturing a wiring board according to one embodiment will be described. The laminated substrate 100 shown in Figure 3 is a multi-cavity substrate (so-called mother substrate) having multiple wiring boards 110 as shown in Figure 1, and the wiring boards 110 can be manufactured by dicing the laminated substrate 100. The laminated substrate 200 shown in Figure 4 is a multi-cavity substrate (so-called mother substrate) having multiple wiring boards 210 as shown in Figure 2, and the wiring boards 210 can be manufactured by dicing the laminated substrate 200. Dividing can be performed by dicing the laminated substrates 100 and 200 in a region that, when viewed from above, has an inorganic substrate 10 containing glass and an insulating resin layer 2, but does not have a wiring section 3 or connection terminals 4, thereby obtaining individual wiring boards 110 and 210, respectively.

[0018] The configurations of the wiring board and the laminated board are described below.

[0019] <Inorganic Substrate Containing Glass> The inorganic substrate 10 containing glass has a first surface and a second surface as its main surfaces. The inorganic substrate 10 containing glass mainly consists of a material (hereinafter also referred to as "inorganic material containing glass") whose coefficient of thermal expansion at 0°C to 400°C is 0.1 ppm / K to 12 ppm / K. Here, "main component" means a component that is contained in an amount of 90% by mass or more.

[0020] Examples of inorganic materials including glass include quartz glass, alkali-free glass, alkali glass, crystallized glass, borosilicate glass, and other types of glass, as well as ceramics such as glass ceramics and alumina ceramics.

[0021] The average thickness of the inorganic substrate 10 containing glass is preferably 100 μm or more, more preferably 200 μm or more. Furthermore, it is preferably 2000 μm or less, more preferably 1500 μm or less, and even more preferably 1100 μm or less. If the average thickness is 100 μm or more, sufficient strength can be obtained in the inorganic substrate 10 containing glass. If the average thickness is 2000 μm or less, it becomes necessary to reduce the stress on the inorganic substrate 10 containing glass, and the stress reduction effect of this embodiment can be fully obtained. The average thickness can be determined by measuring the thickness at 10 or more arbitrary points and calculating the average value.

[0022] As shown in Figures 1 and 2, the inorganic substrate 10 containing glass is provided with one or more through-holes that penetrate the inorganic substrate 10 in the thickness direction. The inside of the through-holes is filled with a conductive material and is provided with wiring sections 3 that electrically connect the first and second surfaces of the inorganic substrate 10 containing glass. In addition, in the wiring board shown in Figures 1 and 2, the inorganic substrate 10 containing glass has end faces 10e, and these end faces correspond to the cut surfaces when manufacturing the wiring board by separating the laminated substrate into individual pieces.

[0023] <Insulating Resin Layer> The insulating resin layer 2 is arranged to cover at least a portion of each main surface of the inorganic substrate 10 containing glass. Depending on the desired configuration, such as a wiring pattern, one layer of the insulating resin layer 2 may be provided on each main surface of the inorganic substrate 10 containing glass, or two or more layers may be provided.

[0024] When one insulating resin layer 2 is provided on each main surface of the inorganic substrate 10 containing glass, as shown in Figures 1 and 3, the insulating resin layer 21 is provided to cover the portion of the first surface of the inorganic substrate 10 containing glass that does not have wiring portions 3 and the wiring portions 3 arranged on the first surface, and the insulating resin layer 22 is provided to cover the portion of the second surface of the inorganic substrate 10 containing glass that does not have wiring portions 3 and the wiring portions 3 arranged on the second surface. In the wiring board 110 shown in Figure 1, the insulating resin layer 21 has an end face 21e, and the insulating resin layer 22 has an end face 22e, and these end faces correspond to the cut surfaces when manufacturing the wiring board by separating the laminated substrate into individual pieces.

[0025] When two or more insulating resin layers 2 are provided on each main surface of the inorganic substrate 10 containing glass, as shown in Figures 2 and 4, the insulating resin layer 211 is arranged to cover the portion of the first surface of the inorganic substrate 10 containing glass that does not have wiring portions 3 and the wiring portions 3 arranged on the first surface, and the insulating resin layer 212 is arranged to cover the portion of the insulating resin layer 211 that does not have wiring portions 3 and the wiring portions 3 provided on the insulating resin layer 211. Furthermore, the insulating resin layer 221 is arranged to cover the portion of the second surface of the inorganic substrate 10 containing glass that does not have wiring portions 3 and the wiring portions 3 arranged on the second surface, and the insulating resin layer 222 is arranged to cover the portion of the insulating resin layer 221 that does not have wiring portions 3 and the wiring portions 3 provided on the insulating resin layer 221. In the wiring substrate 120 shown in Figure 2, each layer of the insulating resin layer 2 has end faces 211e, 212e, 221e, and 222e.

[0026] [Arithmetic surface roughness Sa of the end face of the wiring board] In the wiring board 110, the arithmetic surface roughness Sa of the end face of at least one layer of the insulating resin layer 2 is 0.05 μm or more and 0.20 μm or less, and preferably 0.05 μm or more and 0.18 μm or less. When the arithmetic surface roughness Sa is 0.05 μm or more and 0.20 μm or less, the occurrence of crack initiations within the insulating resin layer 2, between multiple insulating resin layers 2, and between the insulating resin layer 2 and the inorganic substrate 10 containing glass can be reduced during dicing, thereby reducing the occurrence of cracks in the insulating resin layer 2.

[0027] In the wiring board 110, the arithmetic surface roughness Sa of the end face of the inorganic substrate 10 containing glass is preferably 0.05 μm or more and 1.0 μm or less, and more preferably 0.05 μm or more and 0.50 μm or less. When the arithmetic surface roughness Sa is 0.05 μm or more and 1.0 μm or less, generation of crack initiation points inside the inorganic substrate 10 containing glass or between the inorganic substrate 10 containing glass and the insulating resin layer 2 during dicing can be reduced, and generation of cracks in the inorganic substrate 10 containing glass can be reduced.

[0028] In the wiring board 110, as the ratio (%) of the arithmetic surface roughness Sa of the end face of at least one layer of the insulating resin layer 2, 5% or more and 400% or less is preferable with respect to the arithmetic surface roughness Sa of the end face of the inorganic substrate 10 containing glass, 20% or more and 100% or less is more preferable, and 50% or more and 80% or less is still more preferable. When the ratio of the arithmetic surface roughness Sa is 5% or more and 400% or less, generation of crack initiation points inside the insulating resin layer 2, between multiple insulating resin layers 2, or between the insulating resin layer 2 and the inorganic substrate 10 containing glass during dicing can be reduced, and generation of cracks in the inorganic substrate 10 containing glass can be reduced.

[0029] The arithmetic surface roughness Sa of the end face of at least one layer of the insulating resin layer 2 and the arithmetic surface roughness Sa of the end face of the inorganic substrate 10 containing glass can be measured based on ISO 25178 Surface texture (surface roughness measurement). Specifically, it can be measured by a laser microscope (for example, VK-X3000, manufactured by Keyence Corporation). The arithmetic surface roughness Sa is a parameter obtained by expanding the arithmetic mean height Ra of a line to a surface, and is also referred to as the arithmetic mean height Sa.

[0030] The insulating resin layer 2 contains a resin having insulating properties, may contain an inorganic filler, or may be a composite material of a resin and a fiber. The insulating resin layer 2 further contains other components such as a curing agent and a solvent as required. Also, the insulating resin layer 2 is preferably sheet-shaped in terms of manufacturing simplicity.

[0031] - Resin - As the resin, for example, epoxy resin, thermosetting modified polyphenylene ether resin, thermosetting polyimide resin, urea resin, allyl resin, silicone resin, benzoxazine resin, phenolic resin, unsaturated polyester resin, bismaleimide triazine resin, alkyd resin, furan resin, melamine resin, polyurethane resin, aniline resin, maleimide resin, silicone resin, polycarbonate resin, acrylic resin, polyacetal resin, polypropylene resin, etc. can be mentioned. These may be used alone or in combination of two or more. Among these, epoxy resin is preferred in terms of high mechanical strength, heat resistance, and electrical insulation, and excellent water resistance, chemical resistance, and adhesiveness.

[0032] As the epoxy resin, for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type epoxy resin, phenol novolac type epoxy resin, tert - butyl - catechol type epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin, naphthylene ether type epoxy resin, glycidylamine type epoxy resin, glycidyl ester type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, anthracene type epoxy resin, linear aliphatic epoxy resin, epoxy resin having a butadiene structure, alicyclic epoxy resin, heterocyclic epoxy resin, spiro ring - containing epoxy resin, cyclohexanedimethanol type epoxy resin, trimethylol type epoxy resin, halogenated epoxy resin, etc. can be mentioned.

[0033] Among these, bisphenol A type epoxy resin, bisphenol F type epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin, biphenyl type epoxy resin, naphthylene ether type epoxy resin, glycidyl ester type epoxy resin, anthracene type epoxy resin, epoxy resin having a butadiene structure are preferred in terms of more excellent heat resistance and electrical insulation.

[0034] - Inorganic Fillers - Examples of the inorganic fillers include silica, barium sulfate, silicon dioxide, calcined talc, zinc molybdenum-treated talc, barium titanate, titanium dioxide, clay, alumina, mica, boehmite, zinc borate, zinc stannate, other metal oxides or metal hydrates, aluminum hydroxide, calcium carbonate, magnesium hydroxide, magnesium silicate, glass fibers, aluminum borate whiskers, and silicon carbonate whiskers. These may be used individually or in combination of two or more. Among these inorganic fillers, those with silica as the main component are preferred.

[0035] Examples of the silica include amorphous silica, fused silica, crystalline silica, synthetic silica, hollow silica, and spherical silica. Among these, spherical silica and fused silica are preferred.

[0036] Regarding the median diameter of silica, from the viewpoint of electrical insulation and surface smoothness, it is preferably 2 μm or less, more preferably 1 μm or less, even more preferably 0.8 μm or less, and particularly preferably 0.6 μm or less. Furthermore, from the viewpoint of improving the dispersibility of silica, it is preferably 0.01 μm or more, more preferably 0.05 μm or more, and even more preferably 0.1 μm or more.

[0037] The median diameter of silica can be measured by laser diffraction and scattering, based on Mie scattering theory. Specifically, it can be measured using a laser diffraction and scattering particle size distribution analyzer (for example, the LA-950, manufactured by Horiba, Ltd.).

[0038] When the insulating resin layer 2 contains an inorganic filler, the inorganic filler content is preferably 30 parts by mass or more and 80 parts by mass or less per 100 parts by mass of resin. If the content is 30 parts by mass or more, a sufficient effect of reducing the coefficient of thermal expansion can be obtained. If the content is 80 parts by mass or less, sufficient moldability of the insulating resin layer 2 can be obtained.

[0039] - Composite Materials - Examples of composite materials of resin and fiber include composite materials of one or more of the resins and fibers such as inorganic fibers like glass fibers or organic fibers such as polyamide fibers (e.g., woven fabrics, nonwoven fabrics, etc.).

[0040] - Hardener - As the hardener, phenolic hardeners, active ester hardeners, cyanate ester hardeners, benzoxazine hardeners, acid anhydride hardeners, etc. can be mentioned. Among these, phenolic hardeners, active ester hardeners, and cyanate ester hardeners are preferable. These may be used alone or in combination of two or more.

[0041] [Average Thickness of Each Layer of Insulating Resin Layer] As the average thickness of each layer of the insulating resin layer 2, in terms of relaxing the stress on the inorganic substrate containing glass and reducing the crack generation of the inorganic substrate containing glass, it is preferably 2 μm or more and less than 30 μm, more preferably 2 μm or more and 28 μm or less, still more preferably 2 μm or more and 25 μm or less, and particularly preferably 2 μm or more and 10 μm or less.

[0042] The average thickness of each layer of the insulating resin layer 2 can be calculated by measuring the thickness of each layer of the insulating resin layer 2 at any three or more points in a region having only the insulating resin layer 2 without the wiring portion 3 on the inorganic substrate 10 containing glass, using a film thickness meter (for example, Smart Film Thickness Meter SM-100S, manufactured by Otsuka Electronics Co., Ltd.) or a laser microscope (for example, VK-X3000, manufactured by Keyence Corporation), and obtaining the average value of the measured thicknesses.

[0043] The area of the inorganic substrate 10 containing glass is 10000 mm ２ The volume of each layer of the insulating resin layer 2 per is preferably 20 mm ３ or more and less than 300 mm ３ more preferably 20 mm ３ or more and 280 mm ３ or less, still more preferably 20 mm ３ or more and 250 mm ３ or less, particularly preferably 20 mm ３ or more and 100 mm ３ or less. Here, the "area of the inorganic substrate 10 containing glass" may include a portion where the insulating resin layer 2 is not provided, specifically, the wiring portion 3.

[0044] The area of the inorganic substrate 10 containing glass is 10000 mm ２The volume of each insulating resin layer 2 is equal to the area of ​​the inorganic substrate 10 containing glass, which is 10,000 mm². ２ For any region having the above characteristics, the thickness of each layer of the insulating resin layer 2 can be measured using a laser microscope (for example, VK-X3000, manufactured by Keyence Corporation), and the volume can be calculated by summing the thicknesses within the region, or the length of the region can be measured using a JIS Class 1 stainless steel ruler, and the area can be calculated by multiplying the lengths of the two sides, and the volume can be calculated by multiplying the thickness and the area. The size of the inorganic substrate 10 containing glass is 10,000 mm². ２ If it is smaller than this, the volume of each layer of the insulating resin layer 2 is measured over the entire area of ​​the inorganic substrate 10 including glass, and the area of ​​the inorganic substrate 10 including glass is 10,000 mm². ２ It can be calculated by converting it to a volume per unit area.

[0045] In one embodiment, (1) it is preferable that the tensile modulus of the insulating resin layer is 1.0 GPa or more and 30 GPa or less, and / or the tensile strength of the insulating resin layer is 25 MPa or more and 200 MPa or less. In another or additional embodiment, (2) it is preferable that the flexural modulus of the insulating resin layer is 1.0 GPa or more and 50 GPa or less, and / or the flexural strength of the insulating resin layer is 50 MPa or more and 150 MPa or less.

[0046] [Tensile modulus of the insulating resin layer] The tensile modulus of the insulating resin layer 2 is preferably 1.0 GPa or more and 30 GPa or less, more preferably 1.0 GPa or more and 20 GPa or less, and even more preferably 1.0 GPa or more and 15 GPa or less. When the tensile modulus is 1.0 GPa or more and 30 GPa or less, the occurrence of crack initiations within the insulating resin layer 2, between multiple insulating resin layers 2, and between the insulating resin layer 2 and the inorganic substrate 10 containing glass can be reduced during dicing, and the occurrence of cracks in the inorganic substrate 10 containing glass can be reduced.

[0047] [Tensile strength of insulating resin layer] The tensile strength of the insulating resin layer 2 is preferably 25 MPa or more and 200 MPa or less, more preferably 25 MPa or more and 150 MPa or less, and even more preferably 25 MPa or more and 90 MPa or less. When the tensile strength is 25 MPa or more and 200 MPa or less, the occurrence of crack initiations within the insulating resin layer 2, between multiple insulating resin layers 2, and between the insulating resin layer 2 and the inorganic substrate 10 containing glass can be reduced during dicing, and the occurrence of cracks in the inorganic substrate 10 containing glass can be reduced.

[0048] [Flexural modulus of the insulating resin layer] The flexural modulus of the insulating resin layer 2 is preferably 1.0 GPa or more and 50 GPa or less, more preferably 1.0 GPa or more and 30 GPa or less, and even more preferably 1.0 GPa or more and 15 GPa or less. When the flexural modulus is 1.0 GPa or more and 50 GPa or less, the occurrence of crack initiations within the insulating resin layer 2, between multiple insulating resin layers 2, and between the insulating resin layer 2 and the inorganic substrate 10 containing glass can be reduced during dicing, and the occurrence of cracks in the inorganic substrate 10 containing glass can be reduced.

[0049] [Bending strength of insulating resin layer] The bending strength of the insulating resin layer 2 is preferably 50 MPa to 150 MPa, more preferably 65 MPa to 150 MPa, and even more preferably 85 MPa to 145 MPa. When the bending strength is 50 MPa to 150 MPa, the occurrence of crack initiations within the insulating resin layer 2, between multiple insulating resin layers 2, and between the insulating resin layer 2 and the inorganic substrate 10 containing glass can be reduced during dicing, and the occurrence of cracks in the inorganic substrate 10 containing glass can be reduced.

[0050] Tensile modulus, tensile strength, flexural modulus, and flexural strength can be measured according to JIS K7161-1:2014 Method for determining the tensile properties of plastics, and specifically, they can be measured using a tensile testing device (for example, device name: AGS-X, manufactured by Shimadzu Corporation).

[0051] Here, the tensile modulus, tensile strength, flexural modulus, and / or flexural strength are affected by the material and thickness of the test specimen. Therefore, when two or more insulating resin layers 2 are arranged on each main surface of the inorganic substrate 10 containing glass, these measurements are performed using the number of insulating resin layers 2 laminated on each main surface of the inorganic substrate 10 containing glass as test specimens.

[0052] [Peel strength between the glass-containing inorganic substrate and the insulating resin layer] In one embodiment, the peel strength between the glass-containing inorganic substrate 10 and the insulating resin layer 2 is preferably 4.9 N / cm or more and 49 N / cm or less, more preferably 9.8 N / cm or more and 49 N / cm or less, and even more preferably 19.6 N / cm or more and 49 N / cm or less. When the peel strength is 4.9 N / cm or more and 49 N / cm or less, it is possible to reduce the occurrence of crack initiations due to poor interlayer adhesion between the insulating resin layer 2 and the glass-containing inorganic substrate 10 in the event of mechanical fracture such as dicing or thermal shock such as refrigeration cycles, thereby reducing the occurrence of cracks in the glass-containing inorganic substrate 10.

[0053] In one embodiment, the peel strength between the inorganic substrate 10 containing glass and the insulating resin layer 2 is preferably 0.0098 N / cm or more and less than 4.9 N / cm, more preferably 0.098 N / cm or more and less than 4.9 N / cm, and even more preferably 0.98 N / cm or more and less than 4.9 N / cm. When the peel strength is 0.0098 N / cm or more and less than 4.9 N / cm, the adhesion between the insulating resin layer 2 and the inorganic substrate 10 containing glass is too strong, which reduces the occurrence of cracks that originate from cohesive failure of the substrate or resin due to mechanical failure such as dicing or thermal shock such as refrigeration cycles, thereby reducing the occurrence of cracks in the inorganic substrate 10 containing glass.

[0054] The peel strength between an inorganic substrate containing glass and an insulating resin layer can be measured according to JIS C6481 Test Method for Copper-Clad Laminates for Printed Wiring Boards. Specifically, an evaluation substrate B is prepared by placing an insulating resin layer on an inorganic substrate without vias and making cuts around a 10 mm wide x 100 mm long area of ​​the insulating resin layer (see Figure 5). Figure 5 is a diagram illustrating the procedure for measuring the peel strength between an inorganic substrate containing glass and an insulating resin layer. In Figure 5, the inorganic substrate 10 containing glass is approximately 25 mm wide x 100 mm long, and the insulating resin layer 2 is 10 mm wide x 100 mm long. As shown in Figure 5, one end of the insulating resin layer 2 is peeled off and grasped with a gripper. The load (N / cm) is measured when it is peeled off vertically by 35 mm at a speed of 50 mm / min at room temperature, and the peel strength can be determined. The peel strength can also be measured using a tensile tester (for example, device name: Tensilon Universal Tester, manufactured by A&D Co., Ltd.). Furthermore, if two or more insulating resin layers 2 are arranged on each main surface of the inorganic substrate 10 containing glass, the peel strength is measured using the number of insulating resin layers 2 stacked on each main surface of the inorganic substrate 10 containing glass as the evaluation substrate B. Alternatively, the evaluation substrate B can be prepared by arranging the insulating resin layers on an inorganic substrate without vias.

[0055] <Wiring section> In the wiring board 110 shown in Figure 1 and the laminated substrate 100 shown in Figure 3, the wiring section 3 includes a first wiring region located on the surface of the first face of the inorganic substrate 10 containing glass and the surface of the insulating resin layer 21, a second wiring region located on the surface of the second face of the inorganic substrate 10 containing glass and the surface of the insulating resin layer 22, and a through region that penetrates the inorganic substrate 10 containing glass in the thickness direction and electrically connects the first wiring region and the second wiring region. In the wiring board 210 shown in Figure 2 and the laminated substrate 200 shown in Figure 4, the wiring section 3 includes a first wiring region located on the surface of the first face of the inorganic substrate 10 containing glass and the surfaces of the insulating resin layers 211 and 212, a second wiring region located on the surface of the second face of the inorganic substrate 10 containing glass and the surfaces of the insulating resin layers 221 and 222, and a through region that penetrates the inorganic substrate 10 containing glass in the thickness direction and electrically connects the first wiring region and the second wiring region.

[0056] The wiring section 3 is conductive and contains a metal as its main component. Examples of the metal include copper, silver, gold, platinum, nickel, titanium, aluminum, chromium, and alloys thereof. Among these, copper is preferred from the viewpoint of cost and conductivity.

[0057] The average thickness of the wiring section 3 is not particularly limited as long as it is smaller than the average thickness of each layer of the insulating resin layer 2, and can be appropriately selected according to the purpose, but it is preferably 1 μm or more and 28 μm or less, more preferably 2 μm or more and 25 μm or less, and even more preferably 2 μm or more and 10 μm or less. If the average thickness of the wiring section 3 is 1 μm or more, conductivity can be obtained, and if it is smaller than the average thickness of each layer of the insulating resin layer 2 and 28 μm or less, insulation from other wiring sections can be ensured.

[0058] The average thickness of each layer of the insulating resin layer 2 (T ２ ) the average thickness of the wiring section 3 (T ３ ) proportion (T ３ / T ２ There are no particular restrictions on this, and it can be selected as appropriate depending on the purpose, but 1 / 10 to 9 / 10 is preferred, 2 / 10 to 8 / 10 is more preferred, and 4 / 10 to 6 / 10 is even more preferred.

[0059] <Connection Terminals> The connection terminals 4 are arranged on the surface of the insulating resin layer 2. When the laminated substrate and the wiring substrate have a cover layer, the connection terminals 4 are exposed to the outside of the laminated substrate and the wiring substrate through an opening provided in the cover layer. The connection terminals 4 are conductive and contain a metal as their main component. Examples of the metal include copper, silver, gold, platinum, nickel, titanium, aluminum, chromium, and alloys thereof. Among these, copper is preferred from the viewpoint of cost and conductivity.

[0060] <Cover Layer> The laminated substrate and wiring substrate of this embodiment may have a cover layer disposed on the surface of the insulating resin layer 2. The cover layer has openings in the thickness direction of the cover layer so that the connection terminals 4 disposed on the surface of the insulating resin layer 2 are exposed. The cover layer may be mainly composed of a resin such as solder resist, or it may be formed from an inorganic material containing glass, similar to the inorganic substrate 10 containing glass.

[0061] (Semiconductor Package) The semiconductor package of this embodiment is not particularly limited as long as it has the wiring board of this embodiment described above, and can be appropriately selected according to the purpose. Specifically, it further has one or more integrated circuits (ICs), and the wiring board and the integrated circuits are electrically connected via connection terminals.

[0062] (Method for manufacturing a laminated substrate) The method for manufacturing a laminated substrate according to this embodiment includes arranging patterned wiring portions on at least one surface of an inorganic substrate including glass (step S1), and arranging an insulating resin layer so as to cover at least a part of the inorganic substrate including glass (step S2), and may further include other steps such as arranging connection terminals (step S3) and arranging a cover layer (step S4) as needed.

[0063] (Method for manufacturing a wiring board) The method for manufacturing a wiring board according to this embodiment includes manufacturing a laminated substrate by the method for manufacturing a laminated substrate according to this embodiment as described above, and dicing the obtained laminated substrate into individual pieces (step S5) such that the arithmetic surface roughness Sa of the end face of at least one layer of the insulating resin layer in the individual pieces of the wiring board is 0.05 μm or more and 0.20 μm or less, and may further include other steps as necessary.

[0064] A method for manufacturing a laminated substrate according to one embodiment will be described. The method for manufacturing a laminated substrate includes, for example, steps S1 to S4. In step S1, a patterned wiring portion 3 is placed on at least one surface of an inorganic substrate 10 containing glass. In step S2, an insulating resin layer 2 is placed so as to cover at least a portion of the inorganic substrate 10 containing glass. In step S3, connection terminals 4 are placed on the surface of the insulating resin layer 2. In step S4, a cover layer is placed so as to cover at least a portion of the insulating resin layer 2 and expose the connection terminals 4. By doing so, laminated substrates 100 and 200 are manufactured.

[0065] A method for manufacturing a wiring board according to one embodiment will be described. The method for manufacturing a wiring board includes, for example, steps S1 to S5. Steps S1 to S4 are the same as the method for manufacturing a laminated substrate described above, and in step S5, the obtained laminated substrates 100 and 200 are divided into individual pieces by dicing. The wiring boards 110 and 210 are manufactured in this way.

[0066] <Step S1> In Step S1, as shown in Figures 1 and 2, a patterned wiring portion 3 is placed on at least one surface of the inorganic substrate 10 containing glass. The inorganic substrate 10 containing glass and the wiring portion 3 can be appropriately selected from those described in the laminated substrate and wiring substrate of this embodiment.

[0067] There are no particular restrictions on the method of arranging the wiring section 3, and known methods can be appropriately selected depending on the purpose. Examples include copper foil sputtering, chemical vapor deposition (CVD), electroless copper plating, electrolytic copper plating, etching, and conductive paste printing. Furthermore, subtractive, semi-additive, and fully additive methods can be appropriately selected. Specifically, the wiring section can be formed by electrolytic copper plating on a seed layer formed on an inorganic substrate 10 containing glass, and then performing photolithography and etching in a patterned manner. Examples of methods for forming the through-region of the wiring section 3 include electroless copper plating and electrolytic copper plating.

[0068] <Step S2> In step S2, as shown in Figures 1 and 2, an insulating resin layer 2 is placed so as to cover at least a portion of the inorganic substrate 10 containing glass. The insulating resin layer 2 can be appropriately selected from the items described in the laminated substrate and wiring substrate of this embodiment.

[0069] As shown in Figure 2, if the laminated substrate 200 has two or more (multilayer) insulating resin layers and a multilayer wiring section 3 pattern, the multilayer wiring section 3 pattern can be formed by a build-up method in which steps S1 and S2 are repeated alternately to alternately form the wiring section and the insulating layer.

[0070] There are no particular restrictions on the method of arranging the insulating resin layer 2, and a known method can be appropriately selected depending on the purpose. Examples include a vacuum bonding method, and a method in which the insulating resin layer 2 is heat-cured after vacuum bonding.

[0071] <Step S3> In step S3, connection terminals 4 are placed on the surface of the insulating resin layer 2. As connection terminals 4, the items described in the laminated substrate and wiring substrate of this embodiment can be appropriately selected.

[0072] There are no particular restrictions on the method of arranging the connection terminals 4, and a known method can be appropriately selected depending on the purpose. For example, one method is to form a resist pattern by photolithography, masking the area other than the connection terminal 4 formation area at the end of the wiring section 3, forming the connection terminals 4 inside the resist pattern, and then removing the resist pattern.

[0073] Furthermore, it is preferable to apply a surface plating of nickel, palladium, gold, or the like to the surface of the connector terminal 4 after the cover layer has been formed. It is also preferable to roughen the surface of the connector terminal 4 by, for example, plasma treatment. In addition, a reflow solder layer may be formed on the surface of the connector terminal 4. The solder layer is reflowed during component mounting to electrically connect the connector terminal 4 to the component terminal.

[0074] <Step S4> In step S4, a cover layer is placed so as to cover at least a portion of the insulating resin layer 2 and expose the connection terminals 4. The cover layer can be appropriately selected from the items described in the laminated substrate and wiring substrate of this embodiment.

[0075] As described above, as shown in Figures 3 and 4, it is possible to manufacture a laminated substrate as a multi-cavity substrate (a so-called mother substrate) containing multiple wiring boards.

[0076] <Step S5> Next, in step S5, the obtained laminated substrates 100 and 200 are diced (divided into individual pieces) such that the arithmetic surface roughness Sa of at least one end face of the insulating resin layer in the individualized wiring substrate is 0.05 μm or more and 0.20 μm or less. By cutting the portion of the laminated substrate in which the inorganic substrate 10 containing glass and the insulating resin layer 2 are laminated in the lamination direction, individualized wiring substrates can be manufactured as shown in Figures 1 and 2.

[0077] There are no particular limitations on the method for dicing the end face of at least one insulating resin layer in the individualized wiring board so that the arithmetic surface roughness Sa is 0.05 μm or more and 0.20 μm or less, and a suitable method can be selected depending on the purpose. Examples include a method of performing blade dicing using a dicing saw (e.g., DAD-321, manufactured by DISCO Corporation); a method of performing laser ablation using a laser saw (e.g., DFL7160, manufactured by DISCO Corporation); and a method of performing laser stealth using a laser saw (e.g., DFL7341, manufactured by DISCO Corporation).

[0078] Among these, the wiring board of this embodiment is preferred because it can effectively reduce the generation of stress during dicing and reduce the occurrence of cracks in inorganic substrates including glass, and therefore the method of blade dicing using a dicing saw (for example, DAD-321, manufactured by Disco Corporation) is preferred. For example, a blade (for example, model number P1A851 SDC320R10MB01, manufactured by Disco Corporation, thickness 0.3 mm, abrasive coated artificial diamond #320) can be attached and dicing can be performed under conditions of a rotation speed of 10,000 rpm to 50,000 rpm and a speed of 0.5 mm / sec to 5.0 mm / sec.

[0079] The experimental data is described below. Examples 1 to 9 below are examples, and examples 10 to 14 below are comparative examples.

[0080] (Example 1) <Manufacturing of a Laminated Substrate> As an inorganic substrate containing glass, alkali-free glass with dimensions of 550 mm x 650 mm and an average thickness of 500 μm was used. Next, in order to form the patterned wiring section, electrolytic copper plating was applied to a seed layer formed on the inorganic substrate containing glass, and then photolithography and etching were performed in a patterned manner to form a wiring section with an average thickness of 1.0 μm. An insulating resin film (GX-92, manufactured by Ajinomoto Fine Techno Co., Ltd.) with an average thickness of 10.0 μm was used as the insulating resin layer, and was arranged to cover at least a portion of each surface of the inorganic substrate containing glass, forming one insulating resin layer. The area of ​​the inorganic substrate containing glass at that time was 10,000 mm². ２ The volume per layer of insulating resin is 100 mm³. ３ Next, a solder resist with an average thickness of 25 μm was placed so that the connection terminals were exposed and the remaining portion of the wiring and the resin insulating layer were covered, forming a cover layer. Thus, the laminated substrate of Example 1 was manufactured. The laminated substrate of Example 1 has a single layer of insulating resin on each surface. That is, one layer of insulating resin film is placed on each main surface of the alkali-free glass substrate.

[0081] <Manufacturing of Wiring Boards> Using a dicing saw (DAD-321, manufactured by DISCO Corporation), a blade with model number P1A851 SDC320R10MB01 (manufactured by DISCO Corporation), a thickness of 0.3 mm, and an abrasive-coated synthetic diamond #320 was used to dic the obtained laminated substrate into individual pieces under the conditions of a rotation speed of 30,000 rpm and a cutting speed of 2.0 mm / sec, thereby manufacturing the wiring board of Example 1. No defects such as cracks were observed in the wiring board after dicing.

[0082] <Measurement of average thickness of each layer of insulating resin and arithmetic surface roughness Sa of the edge faces of the wiring board> For the obtained wiring board, the average thickness of each layer of insulating resin, the arithmetic surface roughness Sa of the edge faces of the insulating resin layers, and the arithmetic surface roughness Sa of the edge faces of the inorganic substrate containing glass were measured using a laser microscope (VK-X3000, manufactured by Keyence Corporation) based on ISO 25178 Surface properties (surface roughness measurement). As a result, the arithmetic surface roughness Sa of the edge faces of the insulating resin layers was 0.07 μm, and the arithmetic surface roughness Sa of the edge faces of the inorganic substrate containing glass was 0.17 μm.

[0083] <Measurement of Tensile Modulus, Tensile Strength, Flexural Modulus, and Flexural Strength of the Insulating Resin Layer> The tensile modulus, tensile strength, flexural modulus, and flexural strength of the insulating resin layer were measured using a tensile testing apparatus (apparatus name: AGS-X, manufactured by Shimadzu Corporation) based on JIS K7161-1:2014 Method for Determining the Tensile Properties of Plastics. As a result, the tensile modulus of the insulating resin film was 3 GPa, the tensile strength was 55 MPa, the flexural modulus was 8 GPa, and the flexural strength was 50 MPa. In Example 1, since one insulating resin layer 2 is arranged on each main surface of the inorganic substrate 10 containing glass, these measurements were performed using one insulating resin layer 2 as the test piece.

[0084] <Measurement of Peel Strength Between Inorganic Substrate Containing Glass and Insulating Resin Layer> The peel strength between the inorganic substrate containing glass and the insulating resin layer was measured based on JIS C6481 Test Method for Copper-Clad Laminates for Printed Wiring Boards. Specifically, an evaluation substrate B was prepared by placing an insulating resin layer on an inorganic substrate without vias and making cuts around a 10 mm wide x 100 mm long area of ​​the insulating resin layer (see Figure 5). One end of the insulating resin layer was peeled off and grasped with a gripper, and the load (N / cm) was measured using a tensile tester (device name: Tensilon Universal Tester, manufactured by A&D Co., Ltd.) when it was pulled vertically 35 mm at a speed of 50 mm / min at room temperature, and the peel strength was determined. The peel strength between the inorganic substrate containing glass and the insulating resin layer was 6.2 N / cm.

[0085] The thermal shock test, conducted using the following procedure, revealed no defects such as cracks in the wiring board.

[0086] <Evaluation: Thermal Shock Test> A thermal shock test was performed on individual circuit boards from -40°C to 125°C at a rate of one cycle per hour, including a 15-minute period of residence. This test followed the detailed procedures outlined in JEDEC standard 020D.1, JESD22-A113F, and JEDEC standard JESD22-A104D regarding temperature cycling. Specifically, the temperature cycle from -40°C to 125°C was repeated 500 times.

[0087] (Example 2) As an inorganic substrate containing glass, alkali-free glass with dimensions of 510 mm x 515 mm and an average thickness of 500 μm was used. Next, in order to form the patterned wiring section, electrolytic copper plating was applied to a seed layer formed on the inorganic substrate containing glass, and then photolithography and etching were performed in a patterned manner to form a wiring section with an average thickness of 5.0 μm. An insulating resin film with an average thickness of 12.0 μm was used as the insulating resin layer and was arranged to cover at least a portion of each surface of the inorganic substrate containing glass, forming one insulating resin layer. The area of ​​the inorganic substrate containing glass at that time was 10,000 mm². ２ The volume per layer of insulating resin is 120 mm³. ３ Next, a solder resist with an average thickness of 25 μm was placed so that the connection terminals were exposed and the remaining portion of the wiring and the resin insulating layer were covered, forming a cover layer. Thus, the laminated substrate of Example 2 was manufactured. The laminated substrate of Example 2 has multiple insulating resin layers on each surface. That is, 15 layers of insulating resin film are arranged on each main surface of the alkali-free glass substrate.

[0088] Under the same dicing conditions as in Example 1, the obtained laminated substrate was diced with a blade to create individual pieces, and the wiring board of Example 2 was manufactured. No defects such as cracks were found in the wiring board after dicing. A thermal shock test was performed, and no defects such as cracks were found in the wiring board.

[0089] (Example 3) As an inorganic substrate containing glass, alkali-free glass with dimensions of 510 mm x 515 mm and an average thickness of 500 μm was used. Next, in order to form the patterned wiring section, electrolytic copper plating was applied to a seed layer formed on the inorganic substrate containing glass, and then photolithography and etching were performed in a patterned manner to form a wiring section with an average thickness of 10.0 μm. An insulating resin film with an average thickness of 20.0 μm was used as the insulating resin layer and was arranged to cover at least a portion of each surface of the inorganic substrate containing glass, forming one insulating resin layer. The area of ​​the inorganic substrate containing glass at that time was 10,000 mm². ２ The volume per layer of insulating resin is 200 mm³. ３ Next, a solder resist with an average thickness of 25 μm was placed so that the connection terminals were exposed and the remaining portion of the wiring and the resin insulating layer were covered, forming a cover layer. Thus, the laminated substrate of Example 3 was manufactured. The laminated substrate of Example 3 has multiple insulating resin layers on each surface. That is, 10 layers of insulating resin film are arranged on each main surface of the alkali-free glass substrate.

[0090] Under the same dicing conditions as in Example 1, the obtained laminated substrate was diced with a blade to create individual pieces, and the wiring board of Example 3 was manufactured. No defects such as cracks were found in the wiring board after dicing. A thermal shock test was performed, and no defects such as cracks were found in the wiring board.

[0091] (Example 4) In Example 4, laminated substrates and wiring substrates having multiple layers of insulating resin on each surface were manufactured and evaluated in the same manner as in Example 3, except that the number of insulating resin layers on each main surface of the alkali-free glass substrate was changed from 10 layers to 5 layers.

[0092] Dicing revealed no defects such as cracks in the circuit board. Thermal shock testing also revealed no defects such as cracks in the circuit board.

[0093] (Example 5) As an inorganic substrate containing glass, alkali-free glass with dimensions of 550 mm x 650 mm and an average thickness of 500 μm was used. Next, in order to form the patterned wiring section, electrolytic copper plating was applied to a seed layer formed on the inorganic substrate containing glass, and then photolithography and etching were performed in a patterned manner to form a wiring section with an average thickness of 5.0 μm. An insulating resin film with an average thickness of 10.0 μm was used as the insulating resin layer and was arranged to cover at least a portion of each surface of the inorganic substrate containing glass, forming one insulating resin layer. The area of ​​the low thermal expansion coefficient substrate at that time was 10,000 mm². ２ The volume per layer of insulating resin is 100 mm³. ３ Next, a solder resist with an average thickness of 25 μm was placed so that the connection terminals were exposed and the remaining portion of the wiring and the resin insulating layer were covered, forming a cover layer. Thus, the laminated substrate of Example 5 was manufactured. The laminated substrate of Example 5 has a single layer of insulating resin on each surface. That is, one layer of insulating resin film is placed on each main surface of the alkali-free glass substrate.

[0094] Under the same dicing conditions as in Example 1, the obtained laminated substrate was diced with a blade to create individual pieces, and the wiring board of Example 5 was manufactured. No defects such as cracks were found in the wiring board after dicing. A thermal shock test was performed, and no defects such as cracks were found in the wiring board.

[0095] (Example 6) In Example 6, a laminated substrate and a wiring substrate were manufactured and evaluated in the same manner as in Example 5, except that the average thickness of the wiring portion was changed to 10.0 μm and the average thickness of the insulating resin film was changed to 20.0 μm, with one insulating resin layer on each surface.

[0096] Dicing revealed no defects such as cracks in the circuit board. Thermal shock testing also revealed no defects such as cracks in the circuit board.

[0097] (Example 7) In Example 5, the laminated substrate and wiring substrate of Example 7 were manufactured and evaluated in the same manner as in Example 5, except that the average thickness of the wiring portion was changed to 12.0 μm and the average thickness of the insulating resin film was changed to 25.0 μm, with one insulating resin layer on each surface.

[0098] Dicing revealed no defects such as cracks in the circuit board. Thermal shock testing also revealed no defects such as cracks in the circuit board.

[0099] (Example 8) In Example 8, laminated substrates and wiring substrates were manufactured and evaluated in the same manner as in Example 6, except that the number of insulating resin layers on each main surface of the alkali-free glass substrate was changed from one layer to five layers.

[0100] Dicing revealed no defects such as cracks in the circuit board. Thermal shock testing also revealed no defects such as cracks in the circuit board.

[0101] (Example 9) As an inorganic substrate containing glass, alkali-free glass with a size of 150 mm x 150 mm and an average thickness of 500 μm was used. Next, in order to form the patterned wiring, electrolytic copper plating was applied to a seed layer formed on the inorganic substrate containing glass, and then photolithography and etching were performed in a patterned manner to form wiring with an average thickness of 5.0 μm. An insulating resin film with an average thickness of 10.0 μm was used as the insulating resin layer and was arranged to cover at least a portion of each surface of the inorganic substrate containing glass, forming one insulating resin layer. Subsequently, the formation of wiring and the formation of insulating layers were repeated alternately, forming a total of 15 insulating resin layers on each surface of the alkali-free glass substrate. The area of ​​the low thermal expansion coefficient substrate at that time was 10,000 mm². ２ The volume per layer of insulating resin is 100 mm³. ３Next, a solder resist with an average thickness of 25 μm was placed so that the connection terminals were exposed and the remaining portion of the wiring and the resin insulating layer were covered, forming a cover layer. Thus, the laminated substrate of Example 9 was manufactured. The laminated substrate of Example 9 has multiple insulating resin layers on each surface. That is, 15 layers of insulating resin film are arranged on each main surface of the alkali-free glass substrate.

[0102] Under the same dicing conditions as in Example 1, the obtained laminated substrate was diced with a blade to produce individual pieces, and the wiring board of Example 9 was manufactured. No defects such as cracks were found in the wiring board after dicing. As a result of thermal shock testing, no defects such as cracks were found in the wiring board.

[0103] (Example 10) In Example 5, the average thickness of the wiring section was changed to 15.0 μm and the average thickness of the insulating resin film was changed to 25.0 μm. In the same manner as in Example 5, a laminated substrate and a wiring substrate of Example 10 were manufactured and evaluated, each having one insulating resin layer on each surface.

[0104] Dicing revealed no defects such as cracks in the circuit board. However, thermal shock testing revealed cracks in the circuit board.

[0105] (Example 11) In Example 8, the laminated substrate and wiring substrate of Example 11 were manufactured and evaluated in the same manner as in Example 8, except that the average thickness of the wiring portion was changed to 15.0 μm and the average thickness of the insulating resin film was changed to 28.0 μm, and each substrate had multiple insulating resin layers on each surface.

[0106] Dicing revealed no defects such as cracks in the circuit board. However, thermal shock testing revealed cracks in the circuit board.

[0107] (Example 12) In Example 4, the laminated substrate and wiring substrate of Example 12 were manufactured and evaluated in the same manner as in Example 4, except that the average thickness of the wiring portion was changed to 15.0 μm and the average thickness of the insulating resin film was changed to 48.0 μm, and each substrate had multiple insulating resin layers on each surface.

[0108] Dicing revealed no defects such as cracks in the circuit board. However, thermal shock testing revealed cracks in the circuit board.

[0109] (Example 13) In the same manner as in Example 9, except that the average thickness of the wiring portion was changed to 30.0 μm and the average thickness of the insulating resin film was changed to 55.0 μm, a laminated substrate and a wiring substrate of Example 13 having multiple insulating resin layers on each surface was manufactured and evaluated.

[0110] Dicing revealed no defects such as cracks in the circuit board. However, thermal shock testing revealed cracks in the circuit board.

[0111] (Example 14) In Example 14, laminated substrates and wiring substrates were manufactured and evaluated in the same manner as in Example 13, except that the average thickness of the insulating resin film was changed to 200.0 μm and the number of insulating resin layers on each main surface of the alkali-free glass substrate was changed from 15 layers to 1 layer, with one insulating resin layer on each surface.

[0112] Cracks were observed in the wiring board during dicing. Therefore, it did not pass the thermal shock test.

[0113]

[0114]

[0115]

[0116] The results for Examples 1 to 14 are shown in Tables 1 to 3. From these results, it was found that by having an arithmetic surface roughness Sa of 0.05 μm or more and 0.20 μm or less on the end face of at least one layer of the insulating resin layer, it is possible to provide a wiring board that reduces chipping and reduces crack occurrence in the insulating resin layer.

[0117] The wiring board, method for manufacturing the wiring board, and semiconductor package related to this disclosure have been described above, but this disclosure is not limited to the embodiments described above. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope described in the claims. These also naturally fall within the technical scope of this disclosure.

[0118] The following appendices are disclosed with respect to the above embodiments, etc. [Appendix 1] A wiring board having an inorganic substrate containing glass, one or more insulating resin layers disposed to cover at least a part of the inorganic substrate containing glass, and a wiring portion disposed on at least one surface of the inorganic substrate containing glass and the insulating resin layer, wherein the arithmetic surface roughness Sa of the end face of at least one of the insulating resin layers is 0.05 μm or more and 0.20 μm or less. [Appendix 2] The wiring board according to Appendix 1, wherein the arithmetic surface roughness Sa of the end face of the inorganic substrate containing glass is 0.01 μm or more and 2.00 μm or less. [Appendix 3] The wiring board according to Appendix 1 or 2, wherein the arithmetic surface roughness Sa of the end face of at least one of the insulating resin layers is 5% or more and 400% or less of the arithmetic surface roughness Sa of the end face of the inorganic substrate containing glass. [Appendix 4] The wiring board according to any one of Appendix 1 to 3, wherein the average thickness of each layer of the insulating resin layer is 2 μm or more and less than 30 μm. [Note 5] Area of ​​the inorganic substrate including the glass: 10,000 mm² ２ The volume of each layer of the insulating resin layer is 20 mm ３ 300mm or more ３A wiring board according to any one of the appendices 1 to 4, wherein the tensile modulus of the insulating resin layer is 1.0 GPa or more and 30 GPa or less, and / or the tensile strength of the insulating resin layer is 25 MPa or more and 200 MPa or less. [Appendix 7] A wiring board according to any one of the appendices 1 to 6, wherein the flexural modulus of the insulating resin layer is 1.0 GPa or more and 50 GPa or less, and / or the flexural strength of the insulating resin layer is 50 MPa or more and 150 MPa or less. [Appendix 8] A wiring board according to any one of the appendices 1 to 7, wherein the peel strength between the inorganic substrate containing glass and the insulating resin layer is 4.9 N / cm or more and 49 N / cm or less. [Note 9] A method for manufacturing a wiring substrate, comprising: arranging patterned wiring portions on at least one surface of an inorganic substrate containing glass; arranging an insulating resin layer so as to cover at least a portion of the inorganic substrate containing glass; and dicing the obtained laminated substrate such that the arithmetic surface roughness Sa of the end face of at least one layer of the insulating resin layer in the individualized wiring substrate is 0.05 μm or more and 0.20 μm or less. [Note 10] A semiconductor package having a wiring substrate as described in any one of Notes 1 to 8.

[0119] This application claims priority based on Japanese Patent Application No. 2024-170253, filed on 30 September 2024, and incorporates all of its disclosures herein.

[0120] 10 Inorganic substrate containing glass 2, 21, 22, 211, 212, 221, 222 Insulating resin layer 3 Wiring section 4 Connection terminal 100 Laminated substrate 110 Wiring board 200 Laminated substrate 210 Wiring board

Claims

1. A wiring board comprising: an inorganic substrate containing glass; one or more insulating resin layers disposed to cover at least a portion of the inorganic substrate containing glass; and a wiring portion disposed on at least one surface of the inorganic substrate containing glass and the insulating resin layer, wherein the arithmetic surface roughness Sa of the end face of at least one of the insulating resin layers is 0.05 μm or more and 0.20 μm or less.

2. The wiring substrate according to claim 1, wherein the arithmetic surface roughness Sa of the end face of the inorganic substrate containing the glass is 0.05 μm or more and 1.00 μm or less.

3. The wiring substrate according to claim 1, wherein the arithmetic surface roughness Sa of the end face of at least one of the insulating resin layers is 5% or more and 400% or less of the arithmetic surface roughness Sa of the end face of the inorganic substrate containing the glass.

4. The wiring board according to claim 1, wherein the average thickness of each layer of the insulating resin layer is 2 μm or more and less than 30 μm.

5. Area of ​​the inorganic substrate including the glass: 10,000 mm² ２ The volume of each layer of the insulating resin layer per unit area is 20 mm ３ 300mm or more ３ A wiring board according to claim 1, which is less than [amount missing].

6. The wiring board according to claim 1, wherein the tensile modulus of the insulating resin layer is 1.0 GPa or more and 30 GPa or less, and / or the tensile strength of the insulating resin layer is 25 MPa or more and 200 MPa or less.

7. The wiring board according to claim 1, wherein the flexural modulus of the insulating resin layer is 1.0 GPa or more and 50 GPa or less, and / or the flexural strength of the insulating resin layer is 50 MPa or more and 150 MPa or less.

8. The wiring board according to claim 1, wherein the peel strength between the inorganic substrate containing the glass and the insulating resin layer is 4.9 N / cm or more and 49 N / cm or less.

9. A method for manufacturing a wiring substrate, comprising: arranging patterned wiring portions on at least one surface of an inorganic substrate containing glass; arranging an insulating resin layer so as to cover at least a portion of the inorganic substrate containing glass; and dicing the obtained laminated substrate such that the arithmetic surface roughness Sa of the end face of at least one layer of the insulating resin layer in the individual wiring substrate is 0.05 μm or more and 0.20 μm or less.

10. A semiconductor package having a wiring board as described in any one of claims 1 to 8.

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