Diamond CVD reactor apparatuses and methods for use with in-SITU processing

Abstract

In certain examples, CVD (chemical vapor deposition) equipment accommodates grow th of diamond material that may be integrated with semiconductor IC devices for IC thermal management. An example apparatus comprises: a diamond growth chamber in which gases grow diamond; a wall-defined aperture and part of the chamber to provide access, by semiconductor-device processing tool(s), to an in-process sample (e.g. a section of which may be part of or integrated with diamond grown) in the diamond growth chamber; a material-composition stage, within the chamber, to support the processing sample in the diamond growth chamber; and a motorized stage, secured to the material-composition stage, causes movement of the processing sample in dimensions sufficient for the semiconductor¬ device processing tools to access the processing sample via the w all-defined aperture, and to accommodate growth of the diamond on the material-composition stage by effecting distance changes between the selective surface portions and the semiconductor-device processing tool(s).

Description

DIAMOND CVD REACTOR APPARATUSES AND METHODS FOR USE WITH IN-SITU PROCESSINGBACKGROUND(0001] Aspects of the present disclosure are related generally to the field of semiconductor manufacturing, and more explicitly to equipment and methodology for the manufacture of semiconductor devices that include grown diamond.

[0002] Chemical vapor deposition (CVD) is one example of know n technology used in the manufacture of semiconductor devices that include grown diamond, CVD reactors are widely used for diamond growth, particularly for applications in thermal management. These reactors enable the synthesis of high-quality diamond films by introducing a gas mixture, typically containing hydrogen and methane, which decomposes to deposit diamond on a substrate. The advantage of CVD reactors for diamond growth lies in their ability to produce large-area diamond wafers with high thermal conductivity, which is ideal for dissipating heat in electronics. However, current wafer size limitations, typically restricted to <100 mm (4 inches), present challenges for scaling in semiconductor manufacturing. As CVD technology7advances, improving w afer size scalability will be crucial for integrating diamond materials into foundry processes for next-generation chips, potentially transforming thermal management in high-power electronics and quantum computing systems.

[0003] Also, conventional CVD reactors are not well suited for in-situ processing, thereby requiring ex-situ processing steps such as ex-situ polishing and / or ex-situ dielectric deposition. Such ex-situ processing is disadvantageous as it introduces contamination and throughput penalties.

[0004] Exemplary7aspects of the present disclosure are directed to overcoming one or more of the above issues.SUMMARY OF VARIOUS ASPECTS AND EXAMPLES

[0005] Various examples / embodiments described in the present disclosure are directed to issues such as those addressed above and / or others which may become apparent from the following disclosure. For example, some of these disclosed aspects are directed to methods and devices that use or leverage chemical vapor deposition (CVD) to accommodate growth of diamond material that may be integrated with semiconductor integrated circuit (IC) devices for use in IC thermal management.

[0006] In one specific example, an apparatus comprises: a diamond growth chamber in which one or more gases are contained to grow diamond; a wall-defined aperture configured with or as part of the chamber to provide access, by semiconductor-device processing tool(s), to an in-process sample (which may be part of or integrated with diamond grown) in the diamond growth chamber; a material-composition stage, within the chamber, to support the processing sample in the diamond growth chamber; and a motorized stage, secured to the material-composition stage, to cause movement of the processing sample in dimensions sufficient for the semiconductor-device processing tools to access the processing sample via the wall-defined aperture, and to accommodate growth of the diamond on the materialcomposition stage by effecting distance changes between the selective surface portions and the semiconductor-device processing tool(s). In one specific example, such movement involves X-Y-Z translation and rotational control (e.g., in selected ranges such as 0 to 1000 rpm, or from 200 to 600 rpm) for uniform deposition.

[0007] In a more-specific example, the present disclosure is directed to an apparatus that includes a diamond grow th chamber including a housing component within which one or more gases are contained to grow diamond. The apparatus further includes: a wall-defined aperture, a material-composition stage, and a motorized stage. The wall-defined aperture is configured with or as part of the housing component which is to provide access, by one or more semiconductor-device processing tools, to an in-process sample (a section of which may be part of or integrated with diamond grown) in the diamond grow th chamber. The material-composition stage, within the housing component, is to support the processing sample in the diamond growth chamber. The motorized stage, secured to the materialcomposition stage, is to cause movement of the processing sample relative to the one or more semiconductor-device processing tools while the one or more semiconductor-device processing tools is positioned to access the processing sample via the wall-defined aperture, said movement to be in lateral directions to facilitate processing, of selective surface portions of the processing sample, by the one or more semiconductor-device processing tools, and in another direction to accommodate growth of the diamond on the material-composition stage by effecting distance changes between the one or more of the selective surface portions and the one or more semiconductor-device processing tools. Consistent with the above-described example, a more-specific example embodiments may be configured for: large-area wafer growth (e.g., wafers with lateral dimensions / diameters in a range from six inches to twelve inches with integrated in-situ processing capabilities); and / or for adaptation for integrationwith optional in-situ modules (e.g., for seeding, polishing, and / or dielectric deposition such as ALD, PECVD and LPCVD).

[0008] In yet another example, the present disclosure is directed to a method for use with a diamond growth chamber that contains one or more gases for diamond growth. The example method comprises: providing a wall-defined aperture for one or more semiconductor-device processing tools to obtain access to an in-process sample (which may be part of or integrated with diamond grown) in the diamond growth chamber; using a material-composition stage within the chamber to support the processing sample; and causing movement, via a motorized stage secured to the material-composition stage, of the processing sample in three dimensions, the three dimensions being relative to the one or more semiconductor-device processing tools while the one or more semiconductor-device processing tools is positioned to access the processing sample via the wall-defined aperture, wherein the movement is to facilitate processing of selective surface portions of the processing sample by the one or more semiconductor-device processing tools, and to accommodate growth of the diamond on the material-composition stage by effecting distance changes between the one or more of the selective surface portions and the one or more semiconductor-device processing tools.

[0009] The above discussion is not intended to describe each aspect, embodiment or every implementation of the present disclosure. The figures and detailed description that follow also exemplify various embodiments.BRIEF DESCRIPTION OF FIGURES

[0010] Various example embodiments, including experimental examples, may be more completely understood in consideration of the following detailed description in connection with the accompanying drawings, each in accordance with the present disclosure, in which:

[0011] FIGs. 1A, IB and 1C are side-view diagrams of an apparatus centered around a diamond CVD reactor, at different stages of operation, according to certain exemplary aspects of the present disclosure;

[0012] FIGs. 1D-1E and 1F-1G are diagrams of first (1D-1E) and second (1F-1G) alternative example components of a diamond reactor system, according to certain exemplary aspects of the present disclosure;(0013] FIGs. 2A and 2B are perspective views of aspects of a diamond-reactor, consistent with the diamond reactor sy stem shown in FIGs. 1 A, IB and 1C and according to certain exemplary aspects of the present disclosure;

[0001] FIG. 3 is a perspective view of in-situ polishing aspects of a diamond reactor system, also consistent with the diamond reactor shown in FIGs. 1A, IB and 1C and according to certain exemplary' aspects of the present disclosure;

[0015] FIG. 4 is a side-view- diagram of a more-detailed implementation of a diamond reactor system, also consistent with the diamond reactor shown in FIGs. 1A, IB and 1C and according to certain exemplary' aspects of the present disclosure;[0016J FIG. 5 is a side-view? diagram of a variation of the diamond reactor system of FIGs. 1A, IB and 1C, according to certain exemplary aspects of the present disclosure; and

[0017] FIG. 6 is a side-view diagram of another variation of the diamond reactor system, also according to certain exemplary aspects of the present disclosure.

[0018] While various embodiments discussed herein are amenable to modifications and alternative forms, aspects thereof have been show n by w ay of example in the drawings and will be described in detail. It should be understood, however, that the intention is not to limit the disclosure to the particular embodiments described. On the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the scope of the disclosure including aspects defined in the claims. In addition, the term “example” as used throughout this application is only by way of illustration, and not limitation.DETAILED DESCRIPTION

[0019] Aspects of the present disclosure are believed to be applicable to a variety of different types of apparatuses, systems and methods involving CVD (chemical vapor deposition) to accommodate growth of diamond material that may integrated with semiconductor IC devices for use in IC thermal management. While the present disclosure is not necessarily limited to such aspects, an understanding of specific examples in the following description may be understood from discussion in such specific contexts.

[0020] Exemplary aspects of the present disclosure are related to an apparatus (e.g., a system, tool, component, device, etc.) that includes at least the following: a diamond growth chamber; a wall-defined aperture; a material-composition stage within the diamond growth chamber; and a motorized stage to effect or control movement. In use, the diamond grow th chamber contains one or more gases to grow' diamond. For example, the poly crystalline diamond may be seeded and grown by way of such gases. The wall-defined aperture, which may be part of a housing or housing component, is configured with or as part of the chamber to provide access, by semiconductor-device processing tool(s), to an in-process sample (e g., a section of which may be part of or integrated with diamond grow n) in the diamond growth chamber. The material-composition stage is located within the chamber and is to support the processing sample (and may be part of or integrated with diamond grown) in the diamond growth chamber; and a motorized stage, secured to the material-composition stage, to cause movement of the processing sample in dimensions sufficient for the semiconductor-device processing tools to access the processing sample via the w all-defined aperture, and to accommodate growth of the diamond on the material-composition stage by effecting distance changes betw een the selective surface portions and the semiconductor-device processing tool(s).

[0001] Consistent with the above apparatus-type example embodiment and related aspects of the present disclosure, such a manufactured device or method of such manufacture may involve aspects presented and claimed in U.S. Provisional Application Serial No. 63 / 709,031 filed on October 18, 2024 (CMAT.101P1), to which priority is claimed. To the extent permitted, such subject matter is incorporated by reference in its entirety' generally and to the extent that further aspects and examples (such as experimental and / more-detailed embodiments) may be useful to supplement and / or clarify.Accordingly, in the following description various specific details are set forth to describe specific examples presented herein. It should be apparent to one skilled in the art, how ever, that one or more other examples and / or variations of these examples may bepracticed without all the specific details given below. In other instances, well known features have not been described in detail so as not to obscure the description of the examples herein. For ease of illustration, the same connotation and / or reference numerals may be used in different diagrams to refer to the same elements or additional instances of the same element. Also, although aspects and features may in some cases be described in individual figures, it will be appreciated that features from one figure or embodiment can be combined with features of another figure or embodiment even though the combination is not explicitly shown or explicitly described as a combination.

[0023] Consistent with the present disclosure and the above-described aspects, other such apparatuses (e.g., as tools or equipment) and methods are contemplated. According to certain specific example types, the present disclosure is directed to an approach involving the manufacture of a device to be used and / or integrated with an integrated circuit (IC) package.

[0024] In such an example approach, the present disclosure is directed to a method for use with a diamond growth chamber that contains one or more gases for diamond growth. The example method comprises: providing a wall-defined aperture for one or more semiconductor-device processing tools (“processing tools(s)”) to obtain access to an in- process sample (such as a wafer) in the diamond growth chamber; using a materialcomposition stage within the chamber to support the processing sample; and causing movement, via a motorized stage secured to the material-composition stage, of the processing sample in three dimensions. The movement in three-dimensions is relative to the processing tools(s) while being positioned to access the processing sample via the wall-defined aperture. The movement facilitates processing of selective surface portions of the processing sample by the processing tool(s), and to accommodate growth of the diamond on the materialcomposition stage by effecting distance changes betw een the one or more of the selective surface portions and the one or more semiconductor-device processing tools.

[0025] Also consistent with the present disclosure and the above-described aspects, other more-specific types of exemplary tools or equipment are represented by the perspective-like schematic and diagrams shown in FIGs. 1 A-1E. In this exemplary context, FIG. 1 A is a side view of a CVD diamond reactor 120, according to the present disclosure, which is to deposit and / or grow7diamond at or w ithin a wide range of temperatures (e.g., 200-1100 °C) and on a wide range of materials (e.g., Si. GaN, SiC, GaO, InP, Sapphire, SiO2, SiNx). In certain specific proof-of-concept experiments leading to the present disclosure, in-process sample were implemented as wafers with a range of sizes spanning a range from 1 inch to 12 inches (25-300 mm). The type of CVD diamond reactor show n in FIG. 1 A is particularly suited andadvantageous for large-area diamond growth, for example, sufficient to cover most or all of the entire wafer surface.

[0026] In accordance with the present disclosure, the CVD diamond reactor of FIG. 1A is designed to scale up the wafer size to 6 and 8 inches for diamond CVD systems. As shown in FIG. 1 A, this new design includes an opening (or aperture) associated with a lateralsurface dimension (e.g., diameter) in various examples as 2, 4, 6, or 8 inches vertically oriented relative to the wafer inside the chamber of the CVD diamond reactor (e.g., over the top of the wafer). As shown at 101 of FIG. 1A, the opening is referred to as a “wall-defined aperture”, because a tangible structure (e.g., housing, housing or chamber component such as a cutout in a cap, plug, etc. that has some edge corresponding to at least part of a wall) is used to define the opening by a way of a cutout in some form of a wall of the structure. The wall- defined aperture 101 may be configured with or as part of the housing component (FIGs. ID and IE) to provide access, by the processing tool(s), to the upper surface of the wafer, and in some examples, with at least a section of the wafer being used as part of or integrated with grown diamond. For example, the as-grown diamond (as represented by the sample 102) may be processed (e.g., smoothed) and then bonded to a circuit layer including active transistor circuitry for thermal management of heat, such as hot spots, generated by the active transistor circuitry). As shown in FIG. 1 A. a plasma ball 100 is used to represent at least one of the different types of device-processing treatments to be applied by the processing tool(s). In different examples, the wall-defined aperture need not be restricted to a certain shape or position; e.g., it may be part of a structure situated along the upper portion of the reaction chamber enclosure as illustrated in the examples in FIGs. 1A-1C, or it may extend dow n as far as a short distance, separating the opening of the structure from the wafer’s processing surface.

[0027] In this exemplary, more-specific approach, the wafer is placed on top of a material-composition stage (aka a Mo / Cu stage) 104 that, in turn, is on top of a motorized stage 106. In some specific implementations, the wafer is placed on top of a Mo pocket, which is on top of the material-composition stage 104, with the Mo / Cu stage on top of and movement-controlled by the motorized stage that rotates from 0 to 1000 rpm (and in one particular experimental example, in a range from 200 to 600 rpm to facilitate or optimize uniformity). In some related examples, the motorized stage moves as controlled and so configured, such as by shifting in X-Y, or X-Y-Z, directions for better uniformity of growth and adjustment of the growth rate and temperature.

[0028] Accordingly, the material-composition stage 104 is to support the processing sample in the diamond growth chamber, and the motorized stage 106 is secured to the material-composition stage to cause the processing sample to move relative to the position(s) of one or more semiconductor-device processing tool(s), with the processing tool(s) being positioned to access the surface(s) of the processing sample through the wall-defined aperture. In many applications involving the processing tool(s), the motorized stage is controlled via a controller to effect movement in lateral (X-Y planar-like) directions to facilitate the processing of a selective (e.g., wafer’s) surface by the processing tool(s), and movement in another direction to accommodate growth of the diamond on the materialcomposition stage by effecting distance changes between the one or more of the selective surface portions and the processing tool(s). The controller is shown in FIG. 1 A, as an example, located in the base of the chamber 110 (and optionally into a portion 108 of the reactor) with an (extendable or expandable) extension platform 112 extending functional control from the controller 110 towards the motorized stage 106.

[0029] FIGs. IB and 1C show the motorized stage after it is controlled to move the wafer laterally, in the X-Y planar-like directions. FIG. IB shows the motorized stage having moved the wafer to the left side of the chamber, for access by the processing tool (plasma ball) to the wafer surface's right side. FIG. 1C shows the motorized stage having moved the w afer to the right side of the chamber, for access by the processing tool (plasma ball) to the wafer surface’s left side.

[0030] According to experimental / more-specific examples, the present disclosure highlights a couple of alternative wall-defined aperture designs: one without any active cooling and with a 2-10 mm thickness; and another with active microfluidic water cooling for protection and high-temperature growth, for example, using cooling channels that may be 0.5-2 mm in diameter to ensure efficient heat removal. In each of different specific examples, the structure (e.g., housing component or wall) used to implement the wall-defined aperture is made of Molybdenum. Copper, Tungsten, or a combination of two or more of these materials.

[0001] FIGs. IF and 1G, for example, show another reactor-system component with one or more cooling channels. This component, also in the form of a wall-defined aperture, is as an alternative to the version of the wall-defined aperture shown in FIGs. 1D-1E. The alternative wall-defined aperture (of FIGs. IF and 1G) may also be configured with or as part of the housing component to provide access, by the processing tool(s), to the upper surface of the w afer. In this example, however, the alternative w all-defined aperture includes one or more cooling channels, as shown in dashed lines, with a cooling fluid being circulated viaone or more inlets and one or more outlets. In some specific examples, a single cooling channel is used to circulate and distribute the fluid around the alternative wall-defined aperture, and in other specific examples, two or three cooling channels are used in different sections of the alternative wall-defined aperture to circulate and distribute the fluid.

[0032] Also, in such experimental / more-specific examples the motorized stage is implemented as a shallow design that enables control over movement in the Z direction, which facilitates control over the wafer temperature and growth rate. Such movement in the Z direction can be effected with very-small incremental to relatively-large adjustments (e.g., from a micron to nanometers to millimeters) as may be needed depending, for example, on the processing treatments with (e.g., micron-level to millimeter-level) precision and the available types of tool(s) to access the wafer surface via the w all-defined aperture.

[0033] The Z-direction movement can be effected in various ways to accommodate small and / or large distances. For instance, movements for small distances readily accommodate incremental growth of diamond layers (on the order of nanometers to microns), and / or low-level (fine to medium) polishing or ion-beam planarizing. The physical movement can be realized by implementing, as part of the motorized stage, by a vertically-controlled mechanical actuator such as a precision lead-screw, stepper-motor-driven lift, or piezoelectric stack, which moves or extends in a vertical direction between the bottom of the chamber and the top of the extension platform (located between the controller and the motorized stage). Such actuators enable micron-scale positioning accuracy and repeatability. Alternatively, this can be implemented by a pressure-sensitive balloon-like compartment or bellows assembly that is expandable within the motorized stage (and pressure supplied via the controller), thereby raising or lowering the stage in a vertical direction between the bottom of the chamber and the top of the extension platform. Pneumatic expansion provides smoother, vibration-damped motion suitable for delicate polishing or growth steps. Due to use of high- temperatures in such processing, the motorized stage may be designed to permit internal passage of fluids (e.g.. water), or another form of fluid integration, for cooling the motorized stage when in operation. Moving the motorized stage below the wall-defined aperture does not affect the plasma condition. Rather, such movement merely exposes different parts of the wafer to the plasma for diamond growth, and also helps reduce the average temperature of the wafer. This reduction in temperature is especially prevalent for materials and devices with low er thermal budgets.

[0034] FIGs. ID and IE illustrate an exemplary design with the wall-defined aperture being located non-centrically in a housing portal component. FIG. ID, is a perspective view7of the wall-defined aperture as a cap or plug-like structure, which may be removably secured atop a portal or opening of the chamber or reactor. FIG. IE shows a side- or cut-away view of the exemplary wall-defined aperture of FIG. ID. The specific opening shown in FIG. ID, as defined by the wall-defined aperture, is shaped to receive the plasma ball (as an exemplary processing tool to access the wafer surface through the portal) as shown at the top of FIG.1 A. The housing portal component is removable, to permit for placement of other types of components to provide respective alternative wall-defined apertures, with openings shaped to be suitably fitted for use with different types of the processing tools (e.g., different than the plasma ball).

[0035] In certain more-specific example embodiments, the motorized stage may be implemented using commercially available multi-axis positioning systems that provide both Z-axis translation and X-Y rotational control. Examples include the PI (Physik Instrumente) H-824 Hexapod 6- Axis Stage, the Aerotech ANT130-XY-ZR nanopositioning stage, and the Newport XPS-RLD multi-axis rotation / translation platform. Each of these systems is capable of sub-micron vertical positioning while simultaneously enabling controlled rotation or translation in the X-Y plane, thereby ensuring uniform wafer exposure to plasma or ion beams. Also in accordance with the present disclosure, integration of such stages into the reactor design allows precise wafer alignment, dynamic adjustment during growth, and compatibility with high-temperature environments when appropriately shielded or cooled.

[0036] FIGs. 2A and 2B are perspective view s of aspects of a diamond-reactor system, consistent with the diamond reactor shown in FIG. 1 A. The type of CVD diamond reactor shown in FIGs. 2A and 2B is particularly suited, and / or advantageous for in-situ seeding. Since diamond growth on foreign substrates needs prior nucleation, our new tool design includes seeding diamond on the wafer. As shown in FIGs. 2A and 2B, two types of seeding techniques are integrated into the chamber: spin seeding and spray seeding (of the diamond particle solution). In FIGs. 2A and 2B, in-situ seeding is integrated into the diamond CVD reactor for nucleation of the wafer before the diamond growth. The spray nozzles are spread on top of the w afer for uniformity. The seeding nozzle for spin seeding provides the solution from the top of the wafer.

[0037] The system of FIGs. 2A and 2B can be used to seed the wafer using any one or more of the following exemplary’ methods. The first example method involves spin coating or spray coating of the diamond particle solution w ith particle sizes from 5 nm to 100 pm in DI water, DMSO, Methanol, IPA, or Ethanol with a weight percent between 1 and 50%. A second example method involves spin coating or spray coating of solution 1 with added PVA.A third example method involves spin or spray coating of PDDAC to the surface, then spin or spray coating of the diamond particle solution with particle sizes from 5 nm to 100 pm in DI water, DMSO, Methanol, IP A, or Ethanol with a weight percent between 1 and 50%.

[0038] In the type of system shown in FIG. 3, after or in the middle of diamond growth, in-situ polishing is done to planarize the surface of the diamond (if beneficial). This highly controlled polishing technique can produce atomically smooth surfaces without introducing mechanical stresses or contaminants. In this method 1, 2, or 3 ion sources are being used for bombarding the surface. The ion-mill uses ion sources to generate ions (commonly argon), which are accelerated and directed toward the surface of the material to be polished. The high-energy ions collide with atoms on the material's surface, causing them to dislodge (sputtering). This gradual removal of surface atoms allows for precise polishing without mechanical contact. By adjusting the angle and energy' of the ion beam, the milling process can be fine-tuned to remove uneven layers, smooth rough surfaces, or correct defects on a nanoscale level. The process can target specific regions for precision polishing, which is especially useful for optical applications or semiconductor wafers. The ion-mill sources are placed in the chamber with controlled XYZ and incident angle between 0 and 90 degrees (in more-specific examples, from 1° to 15° for uniform polishing. The type of system shown in FIG. 3 is particularly suited, and / or advantageous for in-situ polishing. This type of in-situ polishing system works with the motorized stage to achieve better uniformity across the wafer. Advantageously, by increasing the number of ion beams to 2, 3, or 4, the polishing rate is increased and the smoothness of the surface is improved to below 10 nm RMS roughness.

[0039] In the type of system shown in FIG. 3, after or in the middle of diamond growth, in-situ polishing is done to planarize the surface of the diamond (if beneficial). This highly controlled polishing technique can produce atomically smooth surfaces without introducing mechanical stresses or contaminants. In this method 1, 2, or 3 ion sources are being used for bombarding the surface. The ion-mill process uses ion sources to generate ions (commonly argon), which are accelerated and directed toward the surface of the material to be polished. The high-energy ions collide with atoms on the material's surface, causing them to dislodge (sputtering). This gradual removal of surface atoms allows for precise polishing without mechanical contact. By adjusting the angle and energy of the ion beam at the ion beam generator, the milling process can be fine-tuned to remove uneven layers, smooth rough surfaces, or correct defects on a nanoscale level. The process can target specific regions for precision polishing, which is especially useful for optical applications or semiconductorwafers. The ion-mill sources are placed in the chamber with controlled XYZ and incident angle between 0 and 90 degrees (in more selective examples, in a range from 1° to 15° for uniform polishing). Such aspects are shown in FIG. 3.

[0040] FIG. 4 is a side view of a type of diamond reactor system that is particularly suited, and / or advantageous for m-situ deposition of various dielectrics. In one specific example as depicted in FIG. 4, the CVD diamond system with integrated thermal atomic layer deposition (ALD) facilitates in-situ dielectric deposition after or before the growth. This ALD deposits SiO2, SiNx, A12O3, HfO2, TiN and SiC materials. This type of system facilitates in situ dielectric deposition in diamond growth chamber which offers significant advantages, including reduced contamination by avoiding exposure to external environments, leading to cleaner interfaces and higher material quality. This approach improves interface sharpness, essential for enhancing thermal, electrical, and optical performance in devices, and ensures better layer uniformity and adhesion. This method also boosts process efficiency by eliminating the need for wafer transfer between systems, integrating multiple steps like material growth and dielectric deposition in a single process. Overall, this type of approach enhances both the quality and scalability of semiconductor and electronic device manufacturing.

[0041] Using the type of system show n in FIG. 4, experimental efforts leading to the present disclosure have successfully demonstrated integration of thermal ALD (atomic layer deposition), PECVD (Plasma-enhanced CVD) and LPCVD (Low-Pressure CVD) systems into the diamond reactor for in-situ deposition of various dielectrics. This type of system is illustrated in connection with FIGs. 4, 5 and 6, respectively involving ALD, PECVD and LPCVD.

[0042] The first such specific example, as in FIG. 4, is thermal ALD. In this specific example, the stage is heated to between 100 and 600°C. After being mixed, the pre-cursors are connected to several injectors on top of the stage, as shown in FIG. 4. The exhausts are distributed below the stage for better uniformity. In experimental examples consistent with the present disclosure, ALD deposits SiO2, SiNx, A12O3, HfO2, TiN, and SiC at 100-600 °C with precursor flow rates of 10-200 seem.

[0043] In the detailed example implementation of FIG. 5, the type of CVD diamond system uses integrated PECVD for in-situ dielectric deposition after or before the growth. This PECVD deposits SiO2, a-Si, SiC, SiNx, SiON, TiN and PSG materials. In the process, the stage is heated from 90 to 650 °C for PECVD process. The RF generator and matching network are placed on top of the chamber where the plasma feed is placed. In one suchexample using a showerhead design, the gas inlet is on the top of the chamber, which diffuses into the plasma and sample surface. SiH4, H2, TMB, PH3, and CO2 are the gasses for the PECVD process. In such examples, the PECVD process may be used to deposit SiO2, a-Si, SiC, SiNx, SiON, TiN. and PSG (e.g., in a range of 90 to 650 °C using RF plasma at 13.56 MHz, 50-500 W).

[0044] In the detailed example implementation of FIG. 6, the type of CVD diamond system uses integrated LPCVD for in-situ dielectric deposition after or before the grow th. This LPCVD deposits Polysilicon (Poly-Si), Silicon Nitride (Si3N4), Silicon Dioxide (SiCh), Silicon Carbide (SiC), Phosphosilicate Glass (PSG), Borophosphosilicate Glass (BPSG). Titanium Nitride (TiN), and Tungsten (W) materials. This LPCVD-ty pe semiconductor manufacturing process is used in to deposit thin films like polysilicon, silicon nitride, silicon dioxide, silicon carbide, titanium nitride, and tungsten, among others. The process operates at temperatures between 400°C and 900°C and low pressures ranging from 10 mTorr to 1 Torr. Precursor gases such as silane (SiH4), dichlorosilane (H2SiCh), ammonia (NH3), TEOS, oxygen (O2), and others are introduced into the chamber, where they decompose or react on heated substrates to form uniform, high-quality films. The low pressure enhances film uniformity by minimizing gas-phase reactions and contamination. In this exemplary design, a vertical design is used. The chamber is enclosed to maintain a vacuum and withstand high temperatures. The gas inlet is located at one end of the chamber, allowing the precursor gases to flow uniformly through the entire length of the chamber over the wafer surfaces. The exhaust is positioned at the opposite end, ensuring the continuous removal of reaction byproducts and unreacted gases. This flow design helps achieve uniform deposition across all wafers. The chamber is equipped with heating elements under the sample and surrounding the chamber to maintain the required process temperature, and the system operates under a vacuum created by pumps connected to the exhaust (e.g., LPCVD may operate in a range from 400 to -900 °C and from 10 mTorr to 1 Torr, and used to deposit one or any combination from among Poly-Si. Si3N4, SiO2, SiC, PSG, BPSG, TiN, and W).

[0045] Accordingly, as examples, the specification describes and / or illustrates aspects useful for implementing the claimed disclosure by way of various circuits or circuitry which may be illustrated as or using terms such as blocks, modules, device, system, unit, controller, optical elements and / or other circuit-related depictions and materials and / or layers (e.g., materials and / or layers which are semiconductive, conductive, metallic or semi- metallic). Such circuits (or circuitry), materials and the like are used together with other elements to exemplify how certain embodiments may be carried out in the form of structures, steps,functions, operations, activities, etc. For example, in certain of the embodiments discussed herein, one or more modules may be discrete logic circuits or programmable logic circuits configured and arranged for implementing these operations / activities, as may be carried out in the approaches shown in the figures.

[0046] It is recognized and appreciated that as specific examples, the abovecharacterized figures and discussion are provided to help illustrate certain aspects (and advantages in some instances) which may be used in the manufacture of such structures and devices. These structures and devices include the exemplary structures and devices described in connection with each of the figures as well as other devices, as each such described embodiment has one or more related aspects which may be modified and / or combined with the other such devices and examples as described hereinabove may also be found in the above-referenced Provisional.

[0047] The skilled artisan would also recognize various terminology as used in the present disclosure by way of their plain meaning. As examples, the Specification may describe and / or illustrates aspects useful for implementing the examples by way of various semiconductor materials / circuits which may be illustrated as or using terms such as layers, blocks, modules, device, system, unit, controller, and / or other circuit-type depictions. Such semiconductor and / or semi conductive materials (including portions of semiconductor structure) and circuit elements and / or related circuitry may be used together with other elements to exemplify how certain examples may be carried out in the form or structures, steps, functions, operations, activities, etc. It would also be appreciated that terms to exemplify orientation, such as upper / lower, left / right, top / bottom and above / below, may be used herein to refer to relative positions of elements as shown in the figures. It should be understood that the terminology is used for notational convenience only and that in actual use the disclosed structures may be oriented different from the orientation shown in the figures. Thus, the terms should not be construed in a limiting manner.

[0048] The skilled artisan would also recognize that the Specification may describe and / or illustrates aspects useful for implementing the examples by way of various semiconductor materials / circuits which may be illustrated as or may use terms such as layers, blocks, modules, device, system, unit, controller, and / or other circuit-type depictions. As other examples, reference to a noun in the singular refers to one from among one or more of. unless otherwise indicated (e.g., '‘a packet’’ in various contexts is the same as referring to “at least one packet”), and reference to “example” is not intended to be limiting (e.g., “example” and “non-limiting example” are synonymous). Also, in connection with such descriptions, theterm "set of ... ” (e.g., set of servers) refers to a set of one or more such items (e.g., servers), and the term '‘conference” (and synonymously "meeting”) refers to a multiparty conference involving at least a few or at least several participants to the conference and in which packets from the conference participants are being processed through a data communications server (e.g.. media server). Such aspects and circuit elements and / or related circuitry may be used together with other aspects to exemplify how certain examples may be carried out in the form or structures, steps, functions, operations, activities, etc. It should be understood that the terminology' is used for notational convenience only and that in actual use the disclosed structures may be oriented and / or ordered different from the orientation or ordering shown in the figures. Thus, the terms should not be construed in a limiting manner.

[0049] Based upon the above discussion and illustrations, those skilled in the art will readily recognize that various modifications and changes may be made to the various embodiments without strictly following the exemplary’ embodiments and applications illustrated and described herein. For example, methods as exemplified in the Figures may involve steps carried out in various orders, with one or more aspects of the embodiments herein retained, or may involve fewer or more steps. Such modifications do not depart from the true spirit and scope of various aspects of the disclosure, including aspects set forth in the claims.

Claims

What is Claimed:

1. An apparatus comprising: a diamond growth chamber to contain one or more gases for diamond growth and to provide access via a wall-defined aperture, by one or more semiconductor-device processing tools, to an in-process sample in the diamond growth chamber; a material-composition stage, within the chamber, to support the processing sample in the diamond growth chamber; and a motorized stage, secured to the material-composition stage, to cause movement of the processing sample in three dimensions, relative to the one or more semiconductor-device processing tools, while the one or more semiconductor-device processing tools is positioned to access the processing sample via the w all-defined aperture, to facilitate processing of selective surface portions of the processing sample by the one or more semiconductor-device processing tools, and to accommodate growth of the diamond on the material-composition stage by effecting distance changes between the one or more of the selective surface portions and the one or more semiconductor-device processing tools.

2. The apparatus of claim 1, wherein the wall-defined aperture is located non-centrically in a part of an access housing portal between the selective surface portions of the processing sample and the one or more semiconductor-device processing tools, and the diamond growth chamber and the wall-defined aperture are cooperatively configured to effect in-situ processing, in a form of at least one of seeding and polishing, at a surface of the processing sample while the surface of the processing sample faces the one or more semiconductordevice processing tools and the wall-defined aperture.

3. The apparatus of claim 1, wherein the three dimensions correspond to dimensions for movement in lateral directions to facilitate the processing of selective surface portions of the processing sample.

4. The apparatus of claim 1, wherein the three dimensions correspond to dimensions for movement in at least one another direction that includes a direction orthogonal to a plane characterizing the surface portions, said at least one another direction to accommodate the growth of the diamond on the material-composition stage by effecting the distance changesand to facilitate access of the processing sample, via the wall-defined aperture, by the semiconductor-device processing tools.

5. The apparatus of claim 1, wherein the material-composition stage has an aperture-face side, characterized by a stage-area dimension, to support a wafer and facilitate exposure of the wafer by the one or more semiconductor-device processing tools, wherein the wall- defined aperture has a maximum dimension that is a fraction of the stage-area dimension.

6. The apparatus of claim 1, wherein the material-composition stage has an aperture-face side, characterized by a stage-area dimension, to support growth of the diamond on a wafer characterized by a lateral-surface or diameter dimension in a range from four inches to twelve inches, and facilitate exposure of the wafer by the one or more semiconductor-device processing tools, wherein the wall-defined aperture has a maximum dimension that is in a range from two inches to eight inches and the wafer has a lateral dimension or diameter between 100 mm and 300 mm.

7. The apparatus of claim 1, further including the one or more semiconductor-device processing tools, wherein the one or more semiconductor-device processing tools includes a plurality of exchangeable semiconductor-device processing tools including at least two from among: a plasma ball; a seeding nozzle; and an ion beam source to polish the processing sample.

8. The apparatus of claim 1 , further including at least one port for passing gases between an area outside the diamond growth chamber and another area inside the diamond growth chamber, wherein the at least one port and at least one of the w all-defined aperture are cooperatively arranged to facilitate one of the following operations selectively: a processing of selective surface portions of the processing sample by the one or more semiconductordevice processing tools; and distribution of the gases, via the at least one port, towards the processing sample.

9. The apparatus of claim 1, wherein the motorized stage is to cause the processing sample to rotate at one or more of variably-selected speeds to facilitate diamond-surface polishing, wherein the motorized stage provides X-Y-Z translation and rotational control.

10. The apparatus of claim 1, wherein the lateral directions correspond to X and Y directions and the other direction corresponds to a Z direction that is orthogonal to the X and Y directions, and wherein the motorized stage is to cause the processing sample to shift in the X and Y lateral directions and in the Z direction.1 1. The apparatus of claim 1, further including a configurable control circuit, wherein the motorized stage, while secured to the material-composition stage within the chamber and via operation of the configurable control circuit, is to cause the processing sample to selectively move by shifting in the lateral directions and in the other direction and by rotating at one or more of variably-selected speeds.

12. The apparatus of claim 1, further including one or more heat sources, secured to or integrated with the chamber and cooperatively arranged with the one or more semiconductordevice processing tools to form the diamond under one or more temperatures within a range from 200 to 1100 °C).

13. The apparatus of claim 1, further including the one or more semiconductor-device processing tools, wherein the one or more semiconductor-device processing tools includes at least one ion beam source to planarize a surface of the diamond, to work cooperatively with the motorized stage to facilitate uniformity across a surface of the processing sample to polish the processing sample, and to polish a surface of the processing sample by changing a number of ion beams, in a range from one to four, to effect a smoothness of the surface that is below 10 nm RMS roughness.

14. The apparatus of claim 1 , wherein the diamond growth chamber, the wall-defined aperture, the material-composition stage and the motorized stage are cooperatively configured to effect in-situ seeding selected from one of: spin coating or spray coating of diamond particles corresponding to sizing dimensions in a range from 5 nm to 100 pm.

15. The apparatus of claim 1, wherein the diamond growth chamber, the wall-defined aperture, the material-composition stage and the motorized stage are cooperatively configured to effect in-situ polishing using one, two or three ion sources, each having an adjustable angle to selectively direct an ion beam.

16. The apparatus of claim 1, wherein the diamond growth chamber, the wall-defined aperture, the material-composition stage and the motorized stage are cooperatively configured to effect in-situ dielectric deposition selected as one from among ALD, PECVD, and LPCVD.

17. An apparatus comprising: a diamond grow th chamber including a housing component within which one or more gases are contained to grow diamond; a wall-defined aperture configured with or as part of the housing component to provide access, by one or more semiconductor-device processing tools, to an in-process sample to be integrated with diamond grown in the diamond growth chamber; a material-composition stage, within the housing component, to support the processing sample; and a motorized stage, secured to the material-composition stage, to cause movement of the processing sample relative to the one or more semiconductor-device processing tools, while the one or more semiconductor-device processing tools is positioned to access the processing sample via the wall-defined aperture, said movement to be in lateral directions to facilitate processing, of selective surface portions of the processing sample, by the one or more semiconductor-device processing tools, and in another direction to accommodate growth of the diamond on the materialcomposition stage by effecting distance changes between the one or more of the selective surface portions and the one or more semiconductor-device processing tools.

18. The apparatus of claim 17, further including active cooling channels thermally coupled to or integrated with at least one of the housing component and the wall-defined aperture.

19. The apparatus of claim 17, further including: at least one port for passing gases between an area outside the diamond growth chamber and another area inside the diamond growth chamber, and a wafer, formed by combining or integrating the gases with the sample.

20. A method for use with a diamond growth chamber that contains one or more gases for diamond growth, the method comprising: providing a wall-defined aperture for one or more semiconductor-device processing tools to obtain access to an in-process sample in the diamond growth chamber; using a material-composition stage within the chamber to support the processing sample; and causing movement, via a motorized stage secured to the material-composition stage, of the processing sample in three dimensions, the three dimensions being relative to the one or more semiconductor-device processing tools while the one or more semiconductor-device processing tools is positioned to access the processing sample via the wall-defined aperture, wherein the movement is to facilitate processing of selective surface portions of the processing sample by the one or more semiconductor-device processing tools, and to accommodate growth of the diamond on the material-composition stage by effecting distance changes between the one or more of the selective surface portions and the one or more semiconductor-device processing tools.

21. The method of claim 20, wherein at least a section of the in-process sample is to be part of or integrated with diamond grown in the diamond growth chamber.

22. The method of claim 20, wherein the in-process sample is a wafer, and the motorized stage is to control movement of the wafer by shifting the wafer, relative to an application port of the one or more semiconductor-device processing tools, in two or more of the following directions: (a) z direction corresponding to a distance between a surface of the wafer and the wall-defining aperture, whereby movement of the wafer in the z direction affects a processing step associated with the processing tool as designed (e.g., to control the wafer temperature and growth rate): (b) one or two directions orthogonal to the z direction (‘‘orthogonal direction(s)”. wherein the z direction corresponds to a distance between a surface of the wafer and the wall-defining aperture), whereby movement of the wafer in the orthogonal direction(s) affects a processing step associated with the processing tool as designed; and (c) a rotational direction which rotates a surface of the wafer, whereby movement of the wafer in the rotational direction affects a processing step associated with the processing tool.

23. The method of claim 20, wherein the in-process sample is a wafer, and the one or more semiconductor-device processing tools is to affect the in-process sample by way of one or a combination of two or more processing steps from among the following: controlling a temperature and growth rate of the wafer; causing in-situ seeding of diamond on the wafer bycausing the wafer to be coated; and in-situ polishing to planarize a surface of the wafer; and in situ deposition on the wafer.

24. The method of claim 20, further including causing the one or more gases, as precursor gases, to flow uniformly through an entire length of the chamber over one or more surfaces of the in-process sample while the chamber is enclosed to maintain a vacuum and experiencing temperatures in a range from 400 °C to 900 °C; wherein chamber gas portals are located at ends of the chamber to allow gases into the chamber, out of the chamber for removal of reaction by-products and unreacted gases, and to flow uniformly through the entire length of the chamber over one or more surfaces of the processing sample; and wherein the chamber is equipped with heaters under the in-process sample and surrounding the chamber to maintain a specified process temperature.

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