3D optoelectronic interconnection packaging structure and preparation method therefor

By constructing a glass waveguide structure in a glass composite and bonding a side-emitting chip, the bottleneck problem of electronic interconnection is solved, optoelectronic interconnection integration is achieved, the package size is reduced, power consumption is reduced, and reliability is improved, making it suitable for high-density integrated packaging.

WO2026086144A1 Publication Date: 2026-04-30SJ SEMICONDUCTOR (JIANGYIN) CORP
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Patent Information

Application Number
PCT/CN2025/090658
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-10-25
Filing Date
2025-04-23
Publication Date
2026-04-30

AI Technical Summary

Technical Problem

The bottleneck problem of electronic interconnection in existing technologies limits the system performance of microprocessors.

Method used

A glass waveguide structure is constructed by combining a glass composite with a dielectric layer. Optoelectronic interconnection is achieved by forming through grooves that expose the glass waveguide layer and bonding lateral light-emitting chips in the through grooves. The interconnection is achieved using metal pillars, redistribution layers, and adapter boards.

Benefits of technology

It enables optoelectronic interconnect integration, reduces package size, lowers power consumption, and improves reliability. It is suitable for high-density integrated packaging and achieves good optoelectronic transmission.

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Abstract

The present invention belongs to the technical field of semiconductor manufacturing. Provided are a 3D optoelectronic interconnection packaging structure and a preparation method therefor. A glass waveguide structure can be constructed using a glass composite in combination with a dielectric layer. By means of forming a through trench which exposes a glass waveguide layer and bonding a lateral light-emitting chip in the through trench, a light transmission path can be constructed by a photosensitive region of the lateral light-emitting chip and the glass waveguide layer; and optoelectronic interconnection can be realized by means of the interconnection between metal pillars, redistribution layers and an adapter plate. The present invention can achieve optoelectronic interconnection integration, reduce package size, lower power consumption and improve reliability, and is applicable to high-density integration packaging and can achieve good optoelectronic transmission.
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