Method for producing a layer for an optical and / or organic-electronic component and layer produced by the method and optical and / or organic-electronic component produced by the method

Abstract

The invention relates to a method for producing a layer for an optical and / or organic-electronic component, a layer produced by the method and an optical and / or organic-electronic component comprising such a layer. In the method, a layer comprising a UV-sensitive material is provided, wherein the UV-sensitive material is UV-sensitive such that the volume of the material decreases by irradiation with a UV radiation. The layer is irradiated with UV radiation in at least one region of the layer, so that the layer thickness of the layer is reduced, i.e. decreases, in the region that is irradiated with the UV radiation. The method can therefore be used to set defined layer thicknesses and thus also to specifically change layer thickness-dependent properties of an optical and / or organic-electronic component that is formed with the layer.

Description

[0001] Method for producing a layer for an optical and / or organic-electronic component and layer produced by the method and optical and / or organic-electronic component produced by the method

[0002] The invention relates to a method for producing a layer for an optical and / or organic-electronic component, and to a layer and an optical and / or organic-electronic component produced using such a method. The method is suitable for changing the layer thickness of the layer after it has been provided, in particular for reducing it, so that layer thickness-dependent properties of the layer and thus also properties of the component, in particular optical properties, can still be specifically changed even after the layer has been provided.

[0003] Advances in wafer production mean that ever larger wafers are available for the manufacture of thin-film components. However, this also increases the challenge of producing thin films on the wafers over large areas with the most homogeneous and precise layer thicknesses possible.

[0004] In vapor deposition manufacturing processes, evaporation sources are usually arranged centrally above a wafer or symmetrically around the center of a wafer. As a result, the thicknesses of deposited layers on the wafer with these evaporation sources decrease intrinsically towards the edges of the wafer. However, differences in layer thickness also occur in other manufacturing processes, such as liquid phase processes like spin coating.

[0005] Inhomogeneous layer thicknesses can lead to reduced functionality of the component in optical and / or organic-electronic components. In the case of layers for optical resonators, for example, undesirable peak drifts of the resonance wavelengths of the optical resonator occur.

[0006] The basic structure of optical and / or organic-electronic devices as well as suitable materials for these devices can be found in the literature "Introduction to organic electronic and optoelectronic materials and devices", Edt. Sam-Shajing Sun and Larry R. Dalton, 2nd ed. Edition, Taylor and Francis, CRC Press, 2017; "Organic Light- Emitting Materials and Devices", Edt. Zhigang Rick Li, 2nd Edition, Taylor and Francis, CRC Press, 2015 and "Handbook of Fullerene Science and Technology", Edt. Xing Lu, Takeshi Akasaka and Zdenek Slanina, Springer Nature Singapore Pte Ltd, 2022 known. Optical and / or organic-electronic devices can utilize optical resonant cavities to amplify or filter a specific wavelength or bandwidth of electromagnetic radiation. Organic electroluminescent devices (OLEDs) with an optical resonant cavity are known, for example, from US 24 347 999 A. Siegmund et al. describe in Nat. Commun. 8, 15421 (2017) also a photodetector with an optical resonator.

[0007] Kailuweit & Uhlemann | Patentanwalte An optical resonator can be formed, for example, with a hole-conducting layer (hole transport layer), an optoelectronic layer and an electron-conducting layer (electron transport layer), which are arranged between two parallel reflective surfaces. Between the reflective surfaces, incident electromagnetic radiation is reflected several times in the optical resonance space. If the optical path length between the reflective surfaces corresponds to an integer multiple of half the wavelength of the radiation, the wavelength of the radiation interferes constructively and is amplified. The optical resonator forms an optical resonator for this constructively interfering wavelength, which is referred to as the resonance wavelength.

[0008] The optical path length between the reflective surfaces poses a particular challenge in the production of optical resonators. If the distance between the reflective surfaces, also known as the width of the resonator, changes even slightly, for example due to deviations in the layer thickness of a layer of the optical resonator, this leads to noticeable deviations in the optical path length and therefore also to deviations in the resonance wavelength.

[0009] Optical and / or organic-electronic components, in which deviations in the layer thickness of one or more layers lead to a change in the functionality of the component must therefore usually be separated after their production on a wafer, measured individually and, depending on the deviation in functionality, sorted out and directed to a specific application. However, this procedure is highly time-consuming and only allows a low yield per production run and wafer. In addition, the potential for miniaturization is severely limited. This applies in particular to devices with arrays of several optical and / or organic-electronic components, such as spectrometers or the device for hyperspectral imaging described in the application US 2009 0 174 022 A1.

[0010] DE 10 2020 205 599 A1 discloses a solution for radiation detectors in which the resonance chamber width of an optical resonance chamber of the radiation detector can be mechanically adjusted by means of bending beams. However, the fabrication of such bending beams is very complex and severely restricts the miniaturization of the detectors. The use of bending beams also requires the optical resonance chamber to be deformable or movable. The use of bending beams is therefore only suitable for optical resonance chambers that are formed with cavities or movable optical layers.

[0011] The present invention is based on the task of overcoming these disadvantages in the prior art and of providing a method by which a layer for an optical and / or organic-electronic component, particularly a layer for an optoelectronic component, can be produced with a defined layer thickness. Furthermore, the invention relates to a layer produced by the method and to an optical and / or organic-electronic component, especially an optoelectronic component, produced by the method.

[0012] Kailuweit & Uhlemann | Patentanwalte The problem is solved by a method according to claim 1 as well as layers and an optical and / or organic-electronic component, in particular an optoelectronic component, according to the subsidiary claims. Advantageous embodiments and further embodiments are described in the dependent claims.

[0013] In the method for producing a layer for an optical and / or organic-electronic component, in particular an optoelectronic component, a layer comprising at least one UV-sensitive material or consisting of at least one UV-sensitive material is provided. The UV-sensitive material is UV- sensitive in such a way that the volume of the UV-sensitive material decreases as a result of irradiation with ultraviolet electromagnetic radiation (UV radiation). In the method, the layer is irradiated with UV radiation in at least one region of the layer, whereby the layer thickness of the layer decreases in the region irradiated with the UV radiation. The layer thickness of the layer can thus be specifically adjusted via the UV irradiation. A region is understood to be a spatial region. The method can therefore be used to very quickly and easily correct deviations in the layer thickness, for example resulting from the production of the layer.

[0014] The layer thickness can be adjusted or reduced to a specified or predetermined value (target value) by irradiation with UV radiation, for example. This can significantly improve the yield during layer production and / or a layer thickness-dependent property of the layer, such as the layer thickness-dependent electrical conductivity, the optical path length, the absorption and / or extinction, can be specifically adjusted. By changing the layer thickness, layer thicknessdependent properties of the respective component can thus be corrected or specifically changed. For example, the resonance wavelength in optical resonators, the emission wavelength of OLEDs, the sensitive wavelength of solar cells and photodetectors or the switching properties of organic transistors can be adjusted in a defined manner even after the layer has been provided. In embodiments, the detectable wavelength of a photodetector can be set in a wavelength range of 2,000 nm to 650 nm.

[0015] Surprisingly, by modifying the thickness of a material with the method according to the invention, the absorption coefficient and the conductivity are changed only slightly.

[0016] In this application, the term "layer" refers to a solid layer, i.e. a solvent-free layer. The layer thickness refers to the thickness of the layer parallel to the normal direction of the layer. The irradiation with UV radiation is preferably carried out parallel to the normal direction of the layer, i.e. perpendicular to the surface of the layer, but can also be carried out at an angle to the normal of the layer. The layer is preferably completely irradiated by the UV radiation in the direction of irradiation, so that a preferably homogeneous reduction in layer thickness occurs in the entire irradiated volume of the layer in the direction of irradiation. Accordingly, irradiation in a region is understood to mean irradiation that takes place in sections or regions in relation

[0017] Kailuweit & Uhlemann | Patentanwalte to a direction orthogonal to the direction of irradiation. The irradiated sections or regions can in particular be regions in which the coating thickness deviates from a predetermined or predetermined value after the coating has been provided and / or is to be set to a predetermined or predetermined value.

[0018] In embodiments, the UV-sensitive material can be an organic matrix material, a charge transport material, a charge injection material or a charge blocking material for an optical and / or organic-electronic component, in particular for an optoelectronic component. The matrix material can be a host material and / or a co-host material. Charge transport materials can include electron or hole transport materials, whereby electron transport materials can in particular also be hole or exciton blocking materials and hole transport materials can also be electron or exciton blocking materials. Charge injection materials can be electron or hole injection materials, whereby electron injection materials can in particular also be electron transport materials and hole injection materials can also be hole transport materials. Preferably, the layer can consist of the UV-sensitive material, i.e. the layer can be an undoped or doped charge transport, charge injection, charge blocking and / or matrix layer. Particularly preferably, the UV-sensitive material can be a material of small molecules, such as those used in organic-electronic devices based on small molecules, in particular in optoelectronic devices based on small molecules.

[0019] The UV-sensitive material may be an organic material comprising or consisting of at least one aromatic or heteroaromatic ring system, where the heteroatom preferably being nitrogen. Preferably, the UV-sensitive material can be present as a monomeric or oligomeric material prior to irradiation with UV radiation.

[0020] In embodiments, the UV-sensitive material can be, for example, a hollow, self-contained molecule of polycyclic aromatic hydrocarbons. The UV-sensitive material of the layer can advantageously be a material selected from the group of fullerenes, for example selected from the group of C6o to C108 fullerenes, in particular C6o, C7o, C76, C78, C82, C84, C90, C94or C96, or the group of fluorofullerenes, in particular CeoFis, C8oF48or CeoFae . In embodiments, the fullerene can be selected from the group of functionalized fullerenes, such as the [6,6]-phenyl- Cei-butyric acid methyl ester (PCeiBM), methanophenyl-Cei-butyric acid methyl ester (PC8IBM(CH2)), bis-phenyl-Cei-butyric acid methyl ester (bisPCeiBM), methano-Ceo- fullerenes, e.g. C6oCH2, C6o(CH2)2 and C6o(CH2)3, methano-indene-C8o-fullerenes ((C8o(CH2)lnd), indene-Ceo-bisadducts (ICeoBA), diphenylmethano-based Ceo-bisadducts (F1.1), o-xylenyl-Ceo-bisadducts (F1.2), dihydronaphthyl benzyl alcohol benzoic acid esters (F1.3), indene C8o monoadducts (ICeoMA), fulleropyrrolidines (F1.4) with R1 , R2=Alkl or alkoxy groups, diarylfullerenes (F1.5), o-quinomethane Ceo fullerenes (OQMF), o-quinobismethane

[0021] Kailuweit & Uhlemann | Patentanwalte Ceo fullerenes (OQBMF), o-quinotrimethane Ceo fullerenes (OQTMF), pyrrolidine-tris-acid fullerenes (CPTA), materials for self-assembled fullerene monolayers, e.g. CeoSAM, [6,6]- phenyl-Cei-butyric acid (PCBA), di-tert-butyl-methano-C60-6i,6i-dicarboxylate fullerenes (DBMD), all-carbon indene-Ceo fullerenes (FIF), methano-Cyo fullerenes, methano-indene-Cyo- fullerenes (CyoCH2(lnd)), indene-Cyo-monoadducts (ICyoMA), [6,6]-phenyl-Cyi-butyric acid methyl ester (PCyiBM), Cyo-fulleropyrrolidines, e.g. cis-a-dimethoxy-carbonyl-Cyo- fulleropyrrolidine (a-DMECyo) or indene-Cyo-bisadducts (ICyoBA).

[0022] Preferably, the method can be used with UV-sensitive materials selected from the group of fullerenes for the production of organic solar cells (OSCs) or perovskite solar cells. That is, the layer comprising or consisting of the UV-sensitive material can be a layer for an organic solar cell (OSCs) and / or a perovskite solar cell.

[0023] PCeiBM C6o(CH2)lnd ICeoBA

[0024] Kailuweit & Uhlemann | Patentanwalte

[0025]

[0026] Kailuweit & Uhlemann | Patentanwalte

[0027]

[0028] IC70MA a-DMECyo IC7OBA

[0029] In further embodiments, the UV-sensitive material may, for example, be a non-self-contained molecule. The aromatic or heteroaromatic ring system of the UV-sensitive material can contain aryl or heteroaryl groups, preferably with nitrogen as the heteroatom, whereby several aryl or heteroaryl groups can also be interrupted by a non-aromatic unit, such as a sp3-hybridized carbon or nitrogen atom. In other words, systems such as spirobifluorenes, triarylamines, biphenyls or benzidines etc. are also to be understood as aromatic or heteroaromatic ring systems within the meaning of the present invention, wherein a part of the aromatic or heteroaromatic ring system can also be a fused ring system and / or the aryl or heteroaryl group can also be an alkylaryl or heteroalkylaryl group, preferably with nitrogen as heteroatom.

[0030] Kailuweit & Uhlemann | Patentanwalte An aryl radical (or group) is understood to mean a radical with a backbone of 6 to 30 carbon atoms, preferably 6 to 18 carbon atoms, which is composed of a single carbon ring (monocyclic) or at least two carbon rings (polycyclic). A heteroaryl radical or a heteroaryl group is understood to mean radicals which differ from the aryl radicals in that at least one carbon atom in the basic structure of the aryl radicals is replaced by a nitrogen heteroatom. Aryl or heteroaryl groups can also comprise condensed aryl or heteroaryl groups. A fused aryl or heteroaryl group or an aromatic aryl or heteroaryl group is to be understood as a ring system in which at least two aromatic rings with 5 or 6 atoms are fused together by anellation, i.e. have at least one common aromatic n-electron system.

[0031] Aryl or heteroaryl groups Heteroaryl groups can be, for example, benzene, phenyl, naphthalene, acenaphthene, acenaphthalene, anthracene, phenanthrene, fluorene, benzofluorene, fluoranthene, pyridine, indole, isoindole, carbazole, quinoline, isoquinoline, acridine, phenanthridine, benzoquinoline, phenoxazine, pyrazole, indazole, imidazole, benzimidazole, naphthimidazole, phenanthrimidazole, pyridimidazole, pyrazinimidazole , quinoxalinimidazole, pyridazine, pyrimidine, phthalazine, quinazoline, quinoxaline, diazaanthracene, phenazine, pyrazine, fluorubine, naphthyridine, carboline, phenanthroline, purine, pteridine or indolizine groups.

[0032] In embodiments, the UV-sensitive material can be, for example, a material selected from the group of aromatic triarylamine derivatives. In particular, these can have at least two unsubstituted or substituted phenyl groups, i.e. monocyclic C6 rings on the nitrogen atom, i.e. be diphenylamine or triphenylamine (TPA) compounds. A substituted phenyl group may be a benzyl group, preferably tolyl group, or a benzoyl group, preferably methoxyphenyl group. In embodiments, a substituted phenyl group may also be a phenyl group of a benzidine group, in particular a benzidine group of a triarylaminebenzidine.

[0033] In embodiments, the UV-sensitive material may be, for example, a triphenylamine compound selected from the group of compounds of formula (1). The triphenylamine group (TPA) may be the center, i.e. the central group, of the compound of formula (1). The phenyl groups of formula (1) may be unsubstituted or independently have selected alkyl, alkoxy, aryl or heteroaryl groups R1 , R2 and / or R3, wherein the heteroaryl groups preferably have nitrogen as heteroatom.

[0034] Kailuweit & Uhlemann | Patentanwalte

[0035] Formula (1)

[0036] In embodiments, the UV-sensitive material may be selected from tri(biphenyl-4-yl)-amine (TBA), tri(p-terphenyl-4-yl)-amine (p-TTA), 4,4',4"-tris(N-3-methylphenyl-N-phenylamino)- triphenylamine (m-MTDATA), 4,4',4"-tris(N,N-diphenylamino)-triphenylamine (NATA), 4, 4', 4"- tris(N-(naphthalen-1-yl)-N-phenylamino)-triphenylamine (1T-NATA), 4,4',4"-tris(N- (naphthalen-2-yl)-N-phenylamino)-triphenylamine (2T-NATA), 4,4'-bis[di(3,5-xylyl)amino]-4"- phenyl-triphenylamine, 4,4'-bis[N-(1-naphthyl)-N-phenylamino]-4"-phenyl-triphenylamine, 4,4',4"-tri(N-dibenzo-[a,g]-carbazoyl)-triphenylamine (TDCTA), N, N-Di([1 , 1'-biphenyl]-4-yl)-3'- (9H-carbazol-9-yl)-[1 , 1 ‘-biphenyl]-4-amin, N-([1 , 1 ‘-Biphenyl]-4-yl)-9,9-dimethyl-N-(4-(9- phenyl-9H-carbazol-3-yl)phenyl)-9H-fluoren-2-amin, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)- aniline, 4,4',4"-tris[9,9-dimethylfluoren-2-yl(phenyl)amino]-triphenylamine (TFATA), 4,4- bis(4,4-dimethoxy diphenylaminyl)-4-methoxy triphenylamine (BDATPA), tris(4-(4,4- dimethoxy-phenylaminyl)phenyl)amine (TPAPA), N-phenyl-N-(4-(1 ,4, 5-tri phenyl- 1 H-imidazol- 2-yl)phenyl)-benzenamine (BIPTPA), N-phenyl-4-(1 ,4, 5-triphenyl- 1 H-imidazol-2-yl)-N-(4- (1 ,4,5-triphenyl-1 H-imidazol-2-yl)phenyl)-benzenamine (DBIPTPA), tris(4-(1 ,4,5-triphenyl-1 H- imidazol-2-yl)phenyl)-amine (TBIPTPA), 4-(9,9-diphenylacridin-10(9H)-yl)-N-(4-(9,9- diphenylacridin-10(9H)-yl)phenyl)-N-phenylaniline (TPA-1A), N-[1 ,1 ‘-biphenyl]-2-yl-N-(9,9- dimethyl-9H-fluoren-2-yl)-9,9‘-spirobi[9H-fluoren]-2-amine (SFAF), N-([1 , 1 - biph en y l]-2-y I)- N- (9,9-dimethyl-9H-fluoren-2-yl) spiro[dibenzo[a,d] [7]annulene-5,9'-fluorene]-2'-amine (BFS2A), N-([1 , 1 '-biphenyl]-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)spiro[dibenzo[a,d][7]annulen-5,9'- fluoren]-3-amine (BFS3A), tris(4-(9-(4-(diphenylamino)phenyl)-9H-carbazol-2-yl)phenyl)amine and tris-[4-(3,5-bis-carbazol-9-yl-phenyl)-phenyl]amine.

[0037] In embodiments, R1, R2 and / or R3 may advantageously be unsubstituted or substituted phenyls, in particular benzyls or benzoyls, e.g. methoxyphenyl, or carbazoles or benzocarbazoles. The UV-sensitive material can advantageously be a carbazole triphenylamine derivative, e.g. a 4-(9H-carbazol-9-yl)-triphenylamine derivative. Preferably, the UV-sensitive material can be 4,4',4"-tris(carbazol-9-yl)-triphenylamine (TCTA) or 4,4'- bis(carbazol-9-yl)-triphenylamine (DCTA).

[0038] Kailuweit & Uhlemann | Patentanwalte

[0039]

[0040] DCTA

[0041] The triphenylamine group (TPA) may be the center, i.e. the central molecule, of the compound of formula (1). In embodiments, the triphenylamine group may be a side group, such as in alpha-phenyl-4'-(diphenylamino)stilbene, [4-(3,5-bis-carbazol-9-yl-phenyl)-phenyl]- diphenylamine, [4-[2-(3,5-bis-carbazol-9-yl-phenyl)-carbazol-9-yl]-phenyl]-diphenylamine, 4- (2-(4,6-diphenylpyrimidin-2-yl)-9H-carbazol-9-yl)-N,N-diphenylaniline, 1 ,3,5-tris[4-(diphenyl amino)phenyl]benzene and derivatives thereof or diphenylamine-substituted phenylazomethine dendrimers. In further embodiments, the UV-sensitive material may also be a compound of interconnected triarylamine derivatives having, for example, two or more TPA groups. The triarylamine derivatives can either be directly linked to each other at a phenyl radical of at least one TPA group, e.g. as p-phenylenediamine derivatives or benzidine derivatives, or be linked to each other via bridge molecules, e.g. as p-terphenylenediamine derivatives or benzidine derivatives. e.g. as p-terphenyldiamine derivatives or p- quaterphenyldiamine derivatives, via stilbene, carbazole, cyclohexylidene or fluorene bridges, such as diphenylfluorenes, in particular 9,9-dihexylfluorenes, or spirofluorenes, in particular 9H-spirofluorenes. Compounds with several triarylamine groups can be, for example, N,N,N',N'-tetraphenyl-1 ,4-phenylenediamine, N,N'-diphenyl-N,N'-di(m-tolyl)-1 ,4- phenylenediamine, N,N'-diphenyl-N,N'-bis(p-tolyl)-1 ,4-phenylenediamine, N,N'-di(naphthalen-

[0042] Kailuweit & Uhlemann | Patentanwalte 2-yl)-N,N'-diphenyl benzene-1 ,4-diamine (beta-NPP), N1 ,N1 ,N4,N1-tetra(biphenyl-4- yl)benzene-1 ,4-diamine (B-DDP), 3,3',5,5'-tetrakis(p-tolyl diamino)biphenyl (TTAB), 1 ,3,5- tris(diphenylamino)-benzene (TDAB), N1 ,N1,N3,N3-tetra([1,1'-biphenyl]-4-yl)-N5,N5- diphenylbenzene-1 ,3,5-triamine (TDAB-BP), N1 ,N3,N5-tris(9,9-diphenyl-9H-fluoren-2-yl)- N1 ,N3,N5-triphenylbenzene-1 ,3,5-triamine (TFADB), N,N-diphenyl-4-[4-[4-(N- phenylanilino)phenyl]phenyl]phenyl]aniline, N, N, N' , N'-tetra([1 , 1 '-bi pheny l]-4-y I) [ 1 , T : 4', 1 terphenyl]-4,4"-diamine (TaTm), N,N-diphenyl-4-[4-[4-[4-(N-phenylanilino) phenyl]phenyl] phenyl] aniline (DPQP), N,N'-di-(1-naphthalenyl)-N,N'-diphenyl-[1 ,1':4',1":4",T"-quaterphenyl]- 4,4"'-diamine (4P-NPD), 4,4'-(diphenylmethylene)bis(N,N-diphenylaniline) (TCBPA), trans- 4,4"-bis (diphenylamino)stilbene (BDPAS), (E,E)-1 ,4-bis[4-[bis(4- methoxyphenyl)amino]styryl]benzene (TOP-HTM-alpha1), 1-4-di-[4-(N,N- diphenyl)amino]styryl-benzene (DSA-Ph), N-(4-(2-(4-(diphenylamino) phenyl)-9H-carbazol-9- yl)phenyl)-N-phenylbenzeneamine, N-(4-(2-(4-(4-(diphenylamino) phenyl)-9H-carbazol-9-yl) phenyl)-N-phenylbenzeneamine, 4,4'-(9H,9'H-3,3'-bicarbazole-9,9'-diyl)bis(N,N- diphenylaniline) (BCzTPA), 1 , 1-bis[(di-4-tolylamino)phenyl]-cyclohexane (TAPC), 4',4'-(9H- fluoren-9-ylidene)bis[N,N-bis(4-methylphenyl)-benzenamine (DTAF), 2,2'-bis(N,N- diphenylamino)-9,9-spirobifluorene (Spiro-BPA), 2,7-bis[N-(m-tolyl)anilino]-9',9'-spirobi-9H- fluorene, 2',2'-bis[N,N-bis(4-methoxy-phenyl)amino]-9,9-spirobifluorene (2',2'-MeO-Spiro- TPD), 2,7-bis[N,N-bis(4-methoxy phenyl)amino]-9,9-spirobi-9H-fluorene, N5,N5,N9,N9- tetraphenyl-spiro[benzo[c]fluorene-7',9'-fluorene]-5,9-diamine (TPA-SBFF), 9,9-dimethyl-2- N,7-N-bis(3-methylphenyl)-2-N,7-N-diphenylfluorene-2,7-diamine (DMFL-TPD), N',N'-bis(3- methylphenyl)-N',N'-bis(phenyl)-9,9-dioctylfluorene (DOFL-TPD), N',N'-bis(3-methylphenyl)- N',N'-bis(phenyl)-2,7-diamino-9,9-diphenylfluorene (DPFL-TPD), N',N'-bis(naphthalen-1-yl)- N',N'-bis(phenyl)-2,7-diamino-9,9-spirobifluorene (Spiro-NPB), N ' , N'-bis(naphthalen- 1 -yl)- N',N'-bis(phenyl)-2,7-diamino-9,9-dimethyl-fluorene (DMFL-NPB), N',N'-bis(naphthalen-1-yl)- N',N'-bis(phenyl)-2,7-diamino-9,9-diphenylfluorene (DPFL-NPB), 9,9-bis[4-(N-naphthalen-1- yl-N-phenylamino)-phenyl]-9H-fluorene (NPBAPF) or 2',2'-bis[N,N-bis(biphenyl-4-yl)amino]- 9,9-spirobifluorene (2',2'-Spiro-DBP).

[0043] In further embodiments, the UV-sensitive material may be a material selected from the compounds of formula (2), wherein the radicals or groups Ar1 to Ar4 are independently selected from unsubstituted or substituted aryl radicals and heteroaryl radicals or -groups, which may preferably be selected such that the nitrogen atoms of formula (2) together with the residual groups Ar1 and Ar2 or Ar3 and Ar4 each form a diaryl or diheteroarylamine group.

[0044] Kailuweit & Uhlemann | Patentanwalte

[0045] Formula (2)

[0046] Preferably, at least one first residue group Ar1 , Ar2, Ar3 or Ar4 per nitrogen atom is a phenyl group, i.e. has a monocyclic C6 ring on the nitrogen atom. This phenyl group can be unsubstituted or substituted. For example, it can be a benzyl group, preferably a tolyl group, a benzoyl group, preferably a methoxyphenyl group, or a biphenyl group. The second residual group on the nitrogen atom can also be a phenyl group or an aromatic aryl or heteroaryl group, such as naphthalene or dimethyl fluorene, which is bonded to the nitrogen atom via a C6 ring. The phenyl group may be unsubstituted or a benzyl group, preferably a tolyl group, or a benzoyl group, preferably a methoxyphenyl group.

[0047] Preferably, the residual groups (Ar1 and Ar2) and (Ar3 and Ar4) can be identical to each other in pairs, i.e. A1=Ar3 and Ar2=Ar4 orA1=Ar4 and Ar2=Ar3.

[0048] Particularly preferably, the groups Ar1 to Ar4 can be selected such that the nitrogen atoms of formula (2) each form a diphenylamine group with the residual groups Ar1 and Ar2 or Ar3 and Ar4.

[0049] Advantageously, the UV-sensitive material can be selected from N,N,N',N'-tetraphenyl-1 ,1'- biphenyl-4,4'-diamine (TPB), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-4,4'-biphenyldiamine (TPD), N,N'-bis(4-methylphenyl)-N,N'-diphenyl-4,4'-biphenyldiamine (F2.1), N-(3- methylphenyl)-N'-(4-methyl phenyl)-N,N'-diphenyl-4,4'-biphenyldiamine (F2.2), N,N-bis(3- methylphenyl)-N',N'-diphenyl-4,4'-biphenyldiamine (F2.3), N,N'-bis(4-methylphenyl)-N,N'- diphenyl-4,4'-biphenyldiamine (F2.4), N,N'-bis(4-methylphenyl)-N,N'-diphenyl-4,4'- biphenyldiamine (F2.5), N,N,N',N'-tetrakis(4-methoxyphenyl)-4,4'-biphenyldiamine (MeO- TPD), N,N'-bis(4-methoxy-2-methylphenyl)-N,N'-diphenylbenzidine (F2.6), N,N'-di(4- biphenylyl)-N,N'-diphenylbenzidine (F2.7), N,N,N',N'-tetra(4-biphenylyl)-4,4'-biphenyldiamine (BPBPA), N,N'-bis-(1-naphthalenyl)-N,N'-bis-phenyl-(1 ,1'-biphenyl)-4,4'-diamine (a-NPD), N4,N4'-di(naphthalen-2-yl)-N4,N4'-diphenyl-[1 ,1'-biphenyl]-4,4'-diamine (P-NPD), 2-methyl-N- [4-[4-(N-(2-methylnaphthalen-1-yl)anilino)phenyl]phenyl]-N-phenyl naphthalen-1-amine (a- NPD2), N,N'-di-[(9-phenanthrenyl)-N,N'-diphenyl]-1 , T-biphenyl-4,4'-diamine (PAPB) and N4,N4'-bis(9,9-dimethyl-9H-fluoren-2-yl)-N4,N4'-diphenylbiphenyl-4,4'-diamine (BF-DPB).

[0050] Kailuweit & Uhlemann | Patentanwalte

[0051]

[0052] Kailuweit & Uhlemann | Patentanwalte

[0053]

[0054] Kailuweit & Uhlemann | Patentanwalte

[0055] p-NPD

[0056] Kailuweit & Uhlemann | Patentanwalte

[0057]

[0058] BF-DPB

[0059] In further embodiments, the residual groups Ar1 , Ar2, Ar3 and / or Ar4 may be arylamines, in particular phenylamines. The UV-sensitive material may, for example, be selected from N4,N4'- bis[4-(diphenylamino)phenyl]-N4,N4'-diphenyl-[1 ,T-biphenyl]-4,4'-diamine (TPADPB), N1 ,N1'- (biphenyl-4,4'-diyl)-bis(N1-phenyl-N4,N4-di-m-tolylbenzene-1 ,4-diamine) (DNTPD), N,N'- diphenyl-N,N'-di-[4-(N,N-di-p-tolyl-amino)phenyl]benzidine (NTNPB), N1 ,N1'-(biphenyl-4,4'- diyl)bis(N1-(naphthalen-1-yl)-N4,N4-diphenylbenzene-1 ,4-diamine) (NPB-DPA), N1 ,N1'- (biphenyl-4,4'-diyl)bis(N1-(naphthalen-2-yl)-N4,N4-diphenylbenzene-1 ,4-diamine) (P-NPB- DPA) and triphenylamine tetramers, such as N4,N4'-(biphenyl-4,4'-diyl)bis(N4,N4',N4'- triphenylbiphenyl-4,4'-diamine) (TPT1) and N4,N4'-(biphenyl-4,4'-diyl)bis(N4'-(naphthalen-1- yl)-N4,N4'-diphenylbiphenyl-4,4'-diamine) (Di-NPB).

[0060] In further embodiments, the UV-sensitive material may be selected from compounds of formula (3), wherein the radicals or groups Ar1 to Ar8 are independently selected from unsubstituted or substituted aryl radicals and heteroaryl radicals or- groups. Preferably, Ar1 to Ar8 can be

[0061] Kailuweit & Uhlemann | Patentanwalte selected in such a way that the nitrogen atoms of formula (3) each form a diarylamine or diheteroarylamine group with the residual groups of the respective nitrogen atom, i.e. with the residual groups (Ar1 and Ar2), (Ar3 and Ar4), (Ar5 and Ar6) or (Ar7 and Ar8), it also being possible for the residual groups of a nitrogen atom to be bonded to one another. In particular, the residual groups Ar1 to Ar8 can be selected such that they form electron donors with the nitrogen atoms of formula (3).

[0062] Formula (3)

[0063] Ar1 to Ar8 can advantageously be phenyl groups or aromatic aryls or heteroaryls, such as naphthalene or dimethyl fluorene, which are each bonded to the nitrogen atom via a C6 ring. Preferably, the compounds of formula (3) have at least one residual group Ar1 , Ar2, Ar3, Ar4, Ar5, Ar6, Ar7 and / or Ar8 per nitrogen atom, which is a phenyl group, i.e. which has a monocyclic C6 ring on the nitrogen atom. The phenyl groups can, for example, be unsubstituted or substituted phenyls, in particular benzyls or benzoyls, e.g. methoxyphenyl.

[0064] Particularly preferably, Ar1 to Ar8 are selected such that the nitrogen atoms in formula (3) form a diphenylamine group with the residual groups of the respective nitrogen atom, i.e. with the residual groups (Ar1 and Ar2), (Ar3 andAr4), (Ar5 andAr6) or (Ar7 and Ar8). The phenyl groups can, for example, be unsubstituted or substituted phenyls, in particular benzyls or benzoyls, e.g. methoxyphenyls.

[0065] In embodiments, the nitrogen atoms of formula (3) may each have pairs of identical residual groups (Ar1 and Ar2), (Ar3 and Ar4), (Ar5 and Ar6) and (Ar7 and Ar8), e.g. A1=Ar4=Ar5=Ar8 and Ar2=Ar3=Ar6=Ar7.

[0066] In embodiments, the UV-sensitive material of formula (3) may be selected, for example, from 2,2',7,7'-tetrakis(diphenylamino)-9,9'-spirobifluorene (Spiro-TAD), 2,2',7,7'-tetra(N, N-di-p- tolyl)amino-9,9-spirobifluorene (Spiro-TTB), 2,2',7,7'-octa(m-tolylamine)-9,9-spirobifluorene (Spiro-mTTB), 2,2',7,7'-tetrakis- (N,N-di-p-methoxyphenylamino)-9,9'-spirobifluorene (Spiro- MeO-TAD), N2,N2',N7,N7'-tetrakis-(2-methoxyphenyl)-N2,N2',N7,N7'-tetrakis(4- methoxyphenyl)-9,9'-spirobi[fluorene]-2,2',7,7'-tetraamine (p,o-Spiro-MeOTAD),

[0067] N2, N2', N7, N7'-tetrakis(3-methoxyphenyl)-N2, N2', N7, N7'-tetrakis(4-methoxyphenyl)-9,9'- spirobi[fluorene]-2,2',7,7'-tetraamine (p,m-spiro-MeOTAD), N2,N2',N7,N7'-tetrakis(2,4-

[0068] Kailuweit & Uhlemann | Patentanwalte dimethoxyphenyl)-N2,N2',N7,N7'-tetraphenyl-9,9'-spirobi[fluorene]-2,2',7,7'-tetraamine (2,4- spiro-OMeTAD), 2,2',7,7'-tetrakis(4,4'-dimethoxy-3-methyldiphenylamino)-9,9'-spirobifluorene (spiro-MeOTAD-HTM1), 2,2',7,7'-tetrakis[N-naphthalenyl(phenyl)-amino]-9,9'-spirobifluorene (Spiro-2NPB) and 2,2',7,7'-tetra(9H-carbazol-9-yl)-9,9'-spirobifluorene (Spiro-CBP).

[0069] Spiro-mTTB

[0070] Kailuweit & Uhlemann | Patentanwalte

[0071] p,m-Spiro-MeOTAD

[0072] Kailuweit & Uhlemann | Patentanwalte

[0073]

[0074] Spiro-2NPB

[0075] Kailuweit & Uhlemann | Patentanwalte

[0076]

[0077] Spiro-CBP

[0078] In further embodiments, the UV-sensitive material may be a material selected from compounds of formula (4), wherein the radicals or groups R1 , R2 and R3 are independently selected from aryl and nitrogen heteroaryl groups, in each of which at least one nitrogen heteroatom is connected to the benzene ring of formula (4) via a carbon atom. The residual groups R1 , R2 and / or R3 can advantageously be electron acceptor groups.

[0079] Preferably, the residual groups R1 , R2 and / or R3 can be polycyclic nitrogen heteroaryl groups in which the nitrogen heteroatom forms a diarylamine group with a monocyclic C6 ring and a fused C6 ring of the respective residual group R1 , R2 and / or R3. The nitrogen heteroatom can thus be bonded to a C6 ring of the polycyclic residual group and have a, preferably unsubstituted, phenyl side group.

[0080] In embodiments, the residual groups R1, R2 and R3 may be, for example, indoles, benzimidazoles, naphthimidazoles, phenanthroimidazoles, quinolines, quinazolines or quinoxalines, each comprising at least one 1-phenyl substituent. The UV-sensitive material of formula (4) may, for example be selected from 2,2',2"-(1 ,3,5-benzintriyl)-tris(1-phenyl-1-H- benzimidazole) (TPBi), 1,3,5-tris[N-(4-carbazolyl phenyl) benzimidazol-2-yl]benzene (TPBi- Cz) and 1 ,3,5-tris[N-(4-diphenyl aminophenyl) benzimidazol-2-yl] benzene (TPBi-Da).

[0081] Formula (4)

[0082] Kailuweit & Uhlemann | Patentanwalte

[0083] TPBi-Da

[0084] In further embodiments, the UV-sensitive material may be a material that forms a polymer with intrinsic microporosity (PIMPs) upon exposure to the UV radiation, i.e. polymerizes into a polymer with intrinsic microporosity. Polymers with intrinsic microporosity are polymers that typically have a specific surface area of at least 700 m2 / g due to their increased porosity. The specific surface area can be determined through BET measurements according to Brunner,

[0085] Kailuweit & Uhlemann | Patentanwalte Emmett, and Teller. PIMPs can have spiro centers or sites where the rotation of the molecular structure is reduced by polymerization and thus the volume of the polymer is reduced. PIMPs- forming compounds can, for example, have sterically hindered monomeric units or groups, such as spirobisindanes, phenazines, binaphthyls, spirobifluorenes, hexaphenylbenzenes, tetraphenylethylenes, triptycenes, ethanoanthracene, norbornylbenzocyclobutenes from catalytic arene-norbornene annulation or Trbger bases (TP). The UV-sensitive material can preferably be a material selected from the group of PIMPs-forming spirofluorenes, spirobifluorenes (SBF) or Trbger bases (TP).

[0086] SBF

[0087] In embodiments, the UV-sensitive material may be undoped or molecularly doped with at least one dopant. For a hole transport or injection material, the UV-sensitive material is preferably p-doped, i.e. doped with a hole-conducting or hole-injecting dopant (p-dopant). For an electron transport or- injection material, the UV-sensitive material is preferably n-doped, i.e. doped with an electron-conducting or electron-injecting dopant (n-dopant). The concentration of a dopant can be at least 0.5 wt.% of the UV-sensitive material, preferably 0.5 wt.% to 20 wt.% of the UV- sensitive material. Advantageously, the at least one dopant can be a UV-insensitive dopant. UV-insensitive means that the dopant remains essentially unchanged physically and chemically as a result of exposure to UV radiation. As a result, certain functionalities caused by the UV-insensitive dopant, such as electrical conductivity, can remain essentially unchanged in the method despite UV irradiation, while the layer thickness can be specifically changed by the UV irradiation due to the UV-sensitive material. The UV-insensitive dopant and its concentration can, for example, be selected such that the electrical conductivity decreases by

[0088] Kailuweit & Uhlemann | Patentanwalte a factor of at most 2, preferably by a factor of at most 1.5, particularly preferably by a factor of at most 1.25, in relation to the UV-insensitive dopant upon UV irradiation.

[0089] The at least one UV-insensitive dopant can advantageously be selected from the group of 3- radialenes disclosed in EP 2 180029 A1 and KR 2017 0074 OA. The p-dopant as described in WO 2021 / 048 044 A on p. 62, line 10ff , according to formula (5):

[0090] Formula (5), is especially suitable as an UV-insensitive dopant.

[0091] By irradiation with UV radiation, the UV-sensitive material can be at least partially polymerized and / or destroyed in its molecular structure, e.g. the twisting of the molecular structure can be reduced. In the context of this application, polymerization can also be understood as dimerization or self-condensation.

[0092] No additional photochemical additives as such are used in the method according to the invention to reduce the layer thickness. In other words, the method provides a layer which, in addition to the UV-sensitive material, preferably has no photochemical additives, such as photoinitiators, photostarters, photocatalysts, co-starters, crosslinkers and / or reactive diluents. The method therefore offers the advantage that it can be carried out with little effort and without chemical additives in the coating.

[0093] The irradiation with UV radiation can advantageously take place before the provision or deposition of a subsequent or further layer on the layer provided. The method is carried out particularly preferably for compounds of formulae (1) to (4) and for PIMPs-forming compounds in an oxygen and nitrogen atmosphere, i.e. under the action of oxygen O2 and nitrogen N2. For a provided layer of up to 1 pm thickness under standard conditions (atmospheric pressure and 20°C room temperature), an oxygen and nitrogen atmosphere may contain at least 0.1 vol.% oxygen and at least 0.1 vol.% nitrogen per liter of gas and cm2of the provided layer. Preferably, the method can be carried out in an oxygen and nitrogen atmosphere with at least 2 vol.% oxygen and at least 2 vol.% nitrogen, particularly preferably with at least 5 vol.% oxygen and at least 5 vol.% nitrogen, or in air.

[0094] Kailuweit & Uhlemann | Patentanwalte The layer thickness of the layer provided before UV irradiation can typically be between 5 nm and 1 pm, preferably between 10 nm and 500 nm, particularly preferably between 50 nm and 500 nm. In the method, the layer thickness of the layer can be reduced or decreased by at least 1 %, preferably by at least 5%, particularly preferably by at least 10% by UV irradiation.

[0095] The layer comprising or consisting of the UV-sensitive material can be provided on a carrier layer or a substrate or a layer stack of an optical and / or organic-electronic component, in particular an optoelectronic component. The temperature of the carrier layer, the substrate or the layer of a layer stack, on which the layer comprising or consisting of the UV-sensitive material is provided or formed, can be at room temperature or above room temperature during the formation or deposition of the layer comprising or consisting of the UV-sensitive material, in particular at a temperature of up to 90% of the glass transition temperature of the UV- sensitive material.

[0096] Carrier layers or substrates can be, for example, glass or silicon layers, but also polymer films, e.g. films made of polyimide. The layer can be provided or formed in a thermal deposition process, a chemical or physical vapor deposition process, a sputtering process, a deposition process from solutions, a dip coating process, a spin coating process, a casting process, a rod coating process, a roller coating process or a printing process.

[0097] Irradiation with UV radiation can typically take place in the wavelength range of 50 nm to 450 nm, preferably from 50 nm to 300 nm, more preferably in the wavelength range of 50 nm to 200 nm. Reactive oxygen species, such as ozone, can be formed in an oxygen and nitrogen atmosphere. Accordingly, the method can also be carried out in an ozone atmosphere. Preferably, the irradiation can be carried out with an irradiation dose of at least 100 J / cm2, preferably at least 500 J / cm2, particularly preferably at least 1000 J / cm2. The irradiation intensity can be selected in particular for charge transport and / or charge injection layers in such a way that the layer thickness is reduced or decreased by at least 20% per hour of irradiation time, preferably at least 50% per hour of irradiation time. Radiation sources for UV radiation can be, for example, mercury lamps, in particular amalgam or medium-pressure mercury lamps, or excimer lasers, in particular krypton, argon or xenon fluoride lasers. In embodiments, the layer comprising or consisting of the UV-sensitive material can be a layer for producing an optical and / or organic-electronic component. Organic electronic components may be OLEDs, organic integrated circuits (OlCs), organic field-effect transistors (OFETs), organic thin-film transistors (OTFTs), organic light-emitting transistors (OLETs), organic solar cells (OSCs), organic optical detectors, organic photoreceptors, organic field-quench devices (OFQDs), light-emitting electrochemical cells (LECs) or organic laser diodes (O-lasers).

[0098] Kailuweit & Uhlemann | Patentanwalte Optoelectronic components are components that generate electromagnetic radiation from electric current or vice versa, such as OLEDs, OLETs, OSCs, organic optical detectors, organic photoreceptors, OFQDs, light-emitting electrochemical cells (LEG) or organic laser diodes (O- laser). The optoelectronic components can be based in particular on small molecules, such as SMOLEDs (small molecule based OLEDs). However, the method can also be applied to layers in polymer-based optoelectronic components.

[0099] Optical components are components that change the intensity and / or direction of electromagnetic radiation. They can be, for example, optical gratings or optical resonators, but also lenses, prisms, optical filters, radiation splitters or mirrors, which can, for example, have a layer produced according to the method of the invention, in particular as a coating.

[0100] Since the optical properties of a layer also change with the layer thickness, the method can be used to change the optical properties of a layer in a defined manner or to adapt them to a defined value by reducing the layer thickness. In embodiments, the layer comprising or consisting of the UV-sensitive material can in particular be a layer of an optical resonator, e.g. a Fabry-Perot cavity, of an optoelectronic component, whose resonator width and resonance wavelength is changed, in particular reduced, by irradiation with the UV radiation. The resonance wavelength can typically be reduced by a relative wavelength shift between 1 nm and 400 nm. The method according to the invention can therefore not only be used to compensate for deviations in the resonance behavior that occur, for example, due to manufacturing-related irregularities in the layer thickness or the resonator width, but also to specifically produce resonators with defined, i.e. specific, resonance wavelengths.

[0101] In embodiments, the irradiation with the UV radiation, i.e. the duration and / or intensity of the irradiation, can be carried out as a function of a layer thickness, an intensity of an absorption or transmission band, typically in the visible or near infrared range, a Raman shift, Stokes shift and / or an electrical conductivity of the layer or of an optical and / or organic-electronic component formed with the layer. Measurements of these parameters can be carried out on the layer or the optical and / or organic-electronic component itself, i.e. in-situ, or can be determined by means of comparative measurements on layers, optical resonators or optical and / or organic-electronic components that are produced using the same method as the layer or the optical resonator or the optical and / or organic-electronic component. The irradiation can be carried out depending on a difference between the respective measured or determined parameter and a predetermined value (target value) of the parameter.

[0102] Particularly preferably, the method can be carried out for a plurality of layers comprising or consisting of the UV-sensitive material or for a plurality of regions of a layer comprising or consisting of the UV-sensitive material. The layers or regions may be layers or regions of one

[0103] Kailuweit & Uhlemann | Patentanwalte or more optical and / or optoelectronic components, wherein the layers or regions may, for example, be arranged on a common carrier layer or a common substrate or a common layer stack. The layers or regions can also be formed as a common layer or in a common layer of the component or components. The layers or regions can be irradiated with the same or different wavelengths, irradiation intensities and / or irradiation durations of the UV radiation. The layer thicknesses of the layers or regions can be reduced to a uniform layer thickness. However, it is also possible for the layer thicknesses to be reduced to different layer thicknesses.

[0104] In embodiments, in groups of layers or groups of regions of a layer, the layer thicknesses of the layers or regions within the groups can each be reduced to specific layer thicknesses, in particular layer thicknesses that differ from one another within the group. The groups (pixels) can be arranged in arrays. For example, they can be evenly spaced from each other in at least one spatial direction. The layers or regions of a pixel, which are also referred to as subpixels, can be arranged in a pen-tile pixel geometry, for example. Arrays of optical and / or organic- electronic components functioning in the same way in groups can be produced for spectrally and / or spatially resolving measuring devices, in particular for the visible light range (380 nm to 780 nm) and the near infrared range (780 nm to 2.5 pm). The method can be used in particular to produce hyperspectral photodetectors, i.e. the method can be used to produce hyperspectral photodetectors. Alternatively, the method can also be used to produce pixels for display devices from OLEDs.

[0105] In embodiments, it may be provided that the UV radiation has a spatially constant, i.e. homogeneous, irradiation intensity or an intensity distribution. The intensity distribution can be selected in such a way that the irradiation compensates for an inhomogeneous layer thickness of one or more layers. The intensity distribution can, for example, have a gradient so that inhomogeneous layer thicknesses resulting from a gradient in the layer thickness of the layer provided are equalized.

[0106] Alternatively or in addition to an intensity distribution, it may also be provided that regions of the layer or layers are irradiated with different irradiation durations in order to compensate for differences in the layer thickness via the irradiation duration. In this way, in particular manufacturing-related local deviations in the layer thickness can be compensated for even after the layer has been provided.

[0107] In embodiments, it can also be provided that the UV radiation has an intensity distribution or a distribution of locally different irradiation durations, which are selected in such a way that groups (pixels) or an array of groups with layers or regions of different layer thicknesses are generated with the intensity distribution or distribution of the irradiation durations. The method

[0108] Kailuweit & Uhlemann | Patentanwalte can thus be used very advantageously to produce equally functioning groups of layers or regions of a layer and / or arrays of these groups for imaging devices or spectrally and / or spatially resolving photosensitive measuring devices.

[0109] The invention further relates to a layer produced by the method described, i.e. a layer in which the thickness of the layer has been reduced at least in regions of the layer by the method according to the invention, and to an optical and / or organic-electronic component having at least one layer produced by the method described.

[0110] In embodiments, the layer for an optical and / or organic-electronic component is microstructured. In embodiments, the microstructuring is achieved by using a photomask, wherein a photomask is an opaque plate with transparent areas that allow light to shine through in a defined pattern. In embodiments, the layer comprising at least one UV-sensitive material or consisting of at least one UV-sensitive material is irradiated with ultraviolet electromagnetic radiation (UV radiation), while the photomask is placed on top of the layer.

[0111] The organic electronic device can be or comprise, for example, an OLED, in particular a TADF OLED (OLED based on thermally activated delayed fluorescence), an organic integrated circuit (O-IC), an organic field-effect transistor (O-FET), an organic thin-film transistor (O-TFT), an organic light-emitting transistor (O-LET), an organic solar cell (O-SC), an organic optical detector, an organic photodetector, in particular a charge-transfer photodetector, an organic field-quench device (O-FQD), a light-emitting electrochemical cell (LEG) or an organic laser diode (O-Laser). In embodiments, it may in particular comprise an optical resonator comprising at least one layer produced according to the described method.

[0112] In a preferred embodiment, the optical and / or organic-electronic device may be a photodetector with an optical resonator comprising a layer produced according to the described method. A photodetector with an optical resonator may, for example, be arranged on a substrate or a carrier layer. The photodetector can be composed of a reflective electrode, at least one hole transport layer, an optional cover layer, an optional electron blocking layer, a photosensitive layer, an optional hole blocking layer, an electron transport layer and a partially reflective electrode. At least one of the charge transport layers and / or the charge blocking layers may comprise a UV-sensitive material on which the described method has been carried out.

[0113] In one embodiment, the reflective electrode may be formed of or with chromium and gold layers, for example; the partially reflective electrode may be formed of or with a silver layer. The at least one hole transport layer may comprise, for example, N4,N4'-bis(9,9-dimethyl-9H- fluoren-2-yl)-N4,N4'-diphenyl biphenyl-4,4'-diamine (BF-DPB) as UV-sensitive material on

[0114] Kailuweit & Uhlemann | Patentanwalte which the described method was performed before subsequent layers, such as the optional cover layer or an electron blocking layer, were formed on the hole transport layer. The UV- sensitive material can, for example, be doped with a UV-insensitive dopant, such as e.g. the p-dopant according to formula (5), in order to maintain the charge-conducting properties of the charge transport layer during UV irradiation. For ease of manufacture, the cover layer can be made of the same material as the hole transport layer. The electron blocking layer may also contain or consist of BF-DPB. The photosensitive layer may be a donor-acceptor heterostructure of an electron acceptor, such as Ceo fullerene, and an electron donor, such as 2,2',6,6'-tetrathienyl-4,4'-bithiopyranylidene (D7). The hole blocking layer and the electron transport layer can contain, for example N,N-bis(fluoren-2-yl)-naphthalene tetracarboxy diimide (Bis-HFI-NTCDI), whereby the electron transport layer can be doped with tetrakis- [1 ,3,4,6,7,8-hexahydro-2H-pyrimido[1 ,2-a] pyrimidinato] ditungsten(ll) (W2(hpp)4).

[0115] The method described can be carried out on a charge transport layer and / or charge blocking layer during the manufacture of the photodetector, insofar as these comprise a UV-sensitive material, e.g. to compensate for layer thickness deviations or to change or specifically adjust the resonance wavelength of the resonator and thus the wavelength that can be detected with the photodetector. The method is not usually carried out on the cover layer, i.e. the cover layer is not irradiated with UV radiation. It serves to protect the charge transport layer from oxidation in order to facilitate handling during the production of the photodetector.

[0116] Bis-HFI-NTCDI

[0117] Kailuweit & Uhlemann | Patentanwalte

[0118] W2(hpp)4

[0119] In a further embodiment, the optical and / or organic-electronic component can be a multicolor photodetector (hyperspectra I photodetector), which has a plurality of individual photodetectors. The individual photodetectors can each detect electromagnetic radiation of different wavelengths. They can each be formed with layers or regions of a layer according to the method described. The layers or regions of a layer can advantageously be arranged in an array, wherein the layers or regions are or are formed particularly advantageously on a common carrier layer or on a common substrate or a common layer stack of the multicolor photodetector or wherein the layers are or are formed as a common layer of the multicolor photodetector.

[0120] In one embodiment, the optical and / or organic-electronic component can be an OLED, in particular a TADF OLED, which has at least one layer produced according to the method described. The OLED can, for example, be arranged on a substrate or a carrier layer. It can consist of a reflective electrode, a hole transport layer, optionally a cover layer, optionally at least one electron blocking layer, an emitter layer, optionally a hole blocking layer, an electron transport layer, a partially reflective electrode and an optional decoupling layer. At least one of the charge transport layers and / or the charge blocking layers may comprise a UV-sensitive material on which the described method has been performed.

[0121] In one embodiment, the reflective electrode can be made from or with chromium and gold layers, for example, and the partially reflective electrode can be made from or with a silver layer. The at least one hole transport layer can contain Spiro-TTB as a UV-sensitive material. For ease of manufacture, the optional cover layer can be made of the same material as the hole transport layer. The at least one electron blocking layer may be formed with or from the UV-sensitive material TCTA or di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexane (TAPC). The emitter layer can be a donor-acceptor heterostructure of, for example, 1-diphenylphosphoryl- 2-(2-diphenylphosphorylphenoxy) benzene (DPEPO) and 9-[2,3,4,5-tetra(carbazol-9-yl)-6- (trifluoromethyl)phenyl]carbazole (5CzCF3Ph). The hole blocking layer may be formed with or from the UV-sensitive material TPBi and the electron transport layer may be 4,7-diphenyl-1 ,10- phenanthroline (BPhen) doped with cesium. The decoupling layer can consist of or contain a- NPD.

[0122] Kailuweit & Uhlemann | Patentanwalte

[0123]

[0124] BPhen

[0125] The optical resonator is formed by the layers between the gold layer and the silver layer. If the layer thickness of at least one of the layers (charge transport, -injection and / or -blocking layers) in the resonator is changed, the resonance wavelength of the optical resonator and thus also the color or wavelength of the emitted light of the OLED changes, for example in a wavelength range of 350 nm and 800 nm.

[0126] With the method according to the invention, for example, the layer thickness of the layer with the UV-sensitive Spiro-TTP can be reduced after the layer has been provided on the reflective

[0127] Kailuweit & Uhlemann | Patentanwalte gold layer in order to change or adjust the emitted wavelength of the OLED. The Spiro-TTP can be doped with a UV-insensitive dopant, such as e.g. the p-dopant according to formula (5), in order to maintain the hole-conducting properties of the layer during UV irradiation. After irradiation of the layer with Spiro-TTP, further layers such as TCTA and / or TAPC can be deposited on the UV-treated Spiro-TTP layer. After the OLED has been produced, it can be encapsulated, preferably airtight and / or protected from UV radiation. Alternatively or in addition to the Spiro-TTP layer, the layer thickness of the TCTA, TAPC and / or TPBi layer can also be changed or reduced using the method according to the invention. The method is not usually carried out on the cover layer, i.e. the cover layer is not irradiated with UV radiation. It is used to create a defined interface between the charge transport layer and the active layer of the OLED, i.e. the emitter layer.

[0128] In a further embodiment, the optical and / or organic-electronic device may be a display device comprising a plurality of OLEDs, wherein the OLEDs are formed with at least one layer or region of a layer according to the described method. The layers or regions of a layer can advantageously be arranged in an array, wherein the layers or regions are or will be formed particularly advantageously on a common carrier layer, or a common substrate, or a common layer stack of the display device, or as or will be formed as a common layer of the display device.

[0129] In the following, the invention will be illustrated with reference to Figures 1 to 19. The invention is not limited to the embodiments shown and described, but also includes embodiments having the same effect in the sense of the invention. Furthermore, the invention is not limited to the specifically described combinations of features but can also be defined by other combination of features, provided that the features are not mutually exclusive or a specific combination of features is not explicitly excluded.

[0130] It shows:

[0131] Fig. 1 : the change in absorption wavelength due to UV irradiation in embodiments of optical resonators comprising a layer with UV-sensitive material,

[0132] Fig. 2: the change in absorption wavelength in an optical resonator with a Spiro- TTB layer as a function of the duration of UV irradiation,

[0133] Fig. 3: the change in absorption wavelength in an optical resonator with a Ceo fullerene layer as a function of the duration of UV irradiation,

[0134] Fig. 4: the change in absorption wavelength in an optical resonator with a BF-DPB layer as a function of the duration of UV irradiation,

[0135] Kailuweit & Uhlemann | Patentanwalte Fig. 5: the change in absorption wavelength in an optical resonator with a MeO-TPD layer as a function of the duration of UV irradiation,

[0136] Fig. 6: the change in the resonance wavelength in an optical resonator with a MeO-TPD layer doped with 16.5 wt.% F6-TCNNQ as a function of the duration of UV irradiation,

[0137] Fig. 7: the reduction in coating thickness as a function of irradiation with UV radiation using the example of undoped MeO-TPD and BF-DPB coatings at 20°C, 57°C or 106°C,

[0138] Fig. 8: the reduction in layer thickness as a function of irradiation with UV radiation using the example of doped MeO-TPD and BF-DPB layers,

[0139] Fig. 9: schematic view of an example of an OLED,

[0140] Fig. 10: shows the resonance wavelength for the example of an OLED,

[0141] Fig. 11 : schematic view of an example of a photodetector,

[0142] Fig. 12: schematic view of an example of an OLED with the order of the layers and the layer thickness: NPB (82 nm), Au (2 nm) / Ag (19 nm), BPhen:Cs (1 :1 , 65 nm), BPhen (10 nm), NPB: lr(MDQ)2acac (10 wt.%, 20 nm), NPB (10 nm), p-Spiro-TTB (7 wt.%, 55 nm), Or (3 nm) / Au (80 nm) in glass,

[0143] Fig. 13: the change in absorption wavelength in an OLED according to Fig. 12 as a function of the duration of UV irradiation,

[0144] Fig. 14: the change in current density (mA cm-2) and luminance (cd m2) in an OLED according to Fig. 12 as a function of the duration of UV irradiation,

[0145] Fig. 15: the change in the luminance in relation to the initial luminance (%) in an OLED according to Fig. 12 as a function of the duration of UV irradiation,

[0146] Fig. 16: the quantum efficiency (EQE) and the full width at half maximum (FWHM, nm) in a photodetector according to Fig. 11 as a function of the duration of UV irradiation: first- order cavity (left) and second-order cavity (right),

[0147] Fig. 17: the change in current density J (mA cm-2) in a photodetector according to Fig. 11 as a function of the duration of UV irradiation: first-order cavity (left) and second-order cavity (right),

[0148] Fig. 18: a scheme of the microstructuring of BF-DPB on a Si substrate with a length of 38.86 pm, and

[0149] Fig. 19: a scheme of the microstructuring of BF-DPB on a Si substrate with a length of 50.20 pm.

[0150] Kailuweit & Uhlemann | Patentanwalte The table in Figure 1 shows the change in the maximum absorption wavelength in an optical resonator for layers with UV-sensitive materials selected as examples from the group of fullerenes and the compounds of formulae (1) to (4). For the method according to the invention, layers were provided with a UV-sensitive material which was UV-sensitive in such a way that the volume of the material decreases when irradiated with UV radiation. In the method, the layers were irradiated with UV radiation which is suitable for causing the decrease in volume of the UV-sensitive material, so that the layer thickness of the respective layer was reduced in the region which was irradiated with the UV radiation.

[0151] As the layer thickness decreases, the geometric width of an optical resonator formed by the layer increases and thus the resonance wavelength of the optical resonator decreases. As the resonance wavelength shifts towards smaller wavelengths, the wavelength of the emitted or absorbed radiation, which is amplified in the resonator, also shifts towards smaller wavelengths in optical resonators that comprise a light-emitting or light-absorbing (photosensitive) layer. The change in the maximum absorption wavelength, as shown in the examples in the table in Figure 1 , therefore correlates with the decrease in layer thickness as a result of the method according to the invention.

[0152] Accordingly, the method according to the invention can be used to specifically change or adjust layer thickness-dependent properties of optical and / or organic-electronic components, such as the resonance wavelength of optical resonators and thus the emission wavelength of LEDs or the photosensitive wavelength of solar cells and photodetectors, which are amplified in optical resonators, but also the switching properties of organic transistors. Accordingly, the UV- sensitive material can be an organic matrix material, charge transport, charge injection or charge blocking material for an optical and / or organic-electronic device. Optical and / or organic- electronic devices can be OLEDs, organic integrated circuits, organic field-effect transistors, organic thin-film transistors, organic light-emitting transistors, organic solar cells, organic optical detectors, organic photodetectors, organic field-quench devices, light-emitting electrochemical cells or organic laser diodes.

[0153] The method can also be used to equalize production-related irregularities in the layer thickness of a layer or at least one region of a layer. It is particularly suitable for the production of spatially and / or spectrally resolving photodetectors or imaging devices.

[0154] In addition to its versatile use, the method has the further advantage that it can be carried out with little effort because the layer comprising or consisting of the UV-sensitive material, as in the examples of Figures 1 to 19, can be provided without additional photochemical additives

[0155] Kailuweit & Uhlemann | Patentanwalte in the layer. The method can preferably be carried out in an oxygen and nitrogen atmosphere, and particularly easily in air.

[0156] In the example in Figure 1 , the layers with the UV-sensitive materials were each irradiated with UV radiation from an amalgam lamp for three hours before further layers for a Fabry-Perot cavity were formed on the respective layer. However, other radiation sources, in particular excimer lasers, can also be used for UV irradiation. The method can typically be carried out with UV radiation in the wavelength range of 50 nm to 450 nm, preferably in the wavelength range of 50 nm to 300 nm, more preferably in the range of 50 nm to 200 nm. The radiation dose of the UV radiation can be at least 100 J / cm2, preferably at least 500 J / cm2, particularly preferably at least 1000 J / cm2. If the irradiation intensity is higher, the irradiation time can be shortened.

[0157] Advantageously, the method, in particular for charge transport and / or charge injection layers, is carried out in such a way that a layer thickness reduction of at least 20% per hour of irradiation time, preferably of at least 50% per hour, is achieved. In orderto control the progress of the layer thickness reduction, the irradiation can also be carried out as a function of a layer thickness, an intensity of an absorption band or a transmission band, a Raman or Stokes shift and / or an electrical conductivity of the layer, which are each measured directly on the layer or can be determined from comparative tests. This allows the coating thickness to be set or reduced to a specific value (target value) with particular precision.

[0158] Figures 2 to 6 show absorption spectra of UV-sensitive coatings without and with UV irradiation for comparison. To measure the spectra, optical resonators (Fabry-Perot cavities) consisting of silver (25 nm), the layer with UV-sensitive material (150 nm), gold (60 nm) and chromium (3 nm) were formed on a glass substrate with the layers as in the example in Figure 1. During UV irradiation, the layer of UV-sensitive material was irradiated directly with UV radiation, i.e. before a further coating was applied and a subsequent layer was deposited. The reduction in coating thickness and thus also the wavelength shift of the resonance wavelength and the absorption maximum depends on the irradiation duration and the irradiation intensity. Irradiation with UV radiation can typically reduce the resonance wavelength of the optical resonator by a relative wavelength shift of 1 nm to 400 nm (blue shift). For example, for Spiro- TTB, shown in Figure 2, the resonance wavelength was reduced from 760 nm to 620 nm in 1 .5 hours of irradiation, and forCeo, shown in Figure 3, from 830 nm to 760 nm. The wavelength range in which the resonance wavelength shifts depends on the number of modes in the optical resonator and the respective UV-sensitive material and can, for example, be in the visible light to near infrared range for the first mode, in a range of 380 nm to 2.5 pm.

[0159] Kailuweit & Uhlemann | Patentanwalte The absorption spectra of Figures 4 and 5 and layer thickness measurements of the table in Figure 7 show by way of example that the layer comprising or consisting of the UV-sensitive material can also be provided at temperatures above room temperature. In the examples, the substrate and the chromium and gold layers were heated to a temperature of up to 90% of the glass transition temperature of the UV-sensitive materials while the layer with the UV-sensitive material was formed on it. For example, for MeO-TPD as a UV-sensitive material, the layer was provided at 57°C and for BF-DPB as a UV-sensitive material at 106°C.

[0160] Figures 5 and 6 and the table in Figure 8 show the influence of doping of the UV-sensitive material using MeO-TPD as an example. The concentration of a dopant can be between 0.5 wt.% and 20 wt.% of the UV-sensitive material. The UV-sensitive material can be molecularly doped with a UV-insensitive dopant. UV-insensitive dopants can be, for example, dopants selected from the group of 3-radialenes disclosed in EP 2 180 029 A1 and KR 2017 0 074 170 A. The p-dopant according to formula (5) is especially suitable as an UV-insensitive dopant. The physical and chemical properties of UV-insensitive dopants remain essentially unchanged when irradiated with UV radiation. This means that certain functionalities caused by the UV- insensitive dopant can be retained unchanged despite UV irradiation, while the layer thickness can be specifically changed by the UV irradiation due to the UV-sensitive material.

[0161] In the examples in the tables in Figures 7 and 8, the decrease in layer thicknesses is shown as an example for layers whose layer thicknesses were between 151 nm and 251 nm before irradiation with UV radiation. However, the method can also be carried out on coatings with a thickness in the range of 5 nm to 1 pm, preferably from 10 nm to 500 nm, particularly preferably from 50 nm to 500 nm. UV irradiation can reduce the layer thickness by at least 1%, preferably by at least 5%, particularly preferably by at least 10% of the layer thickness before UV irradiation.

[0162] Figure 9 shows a schematic side view of an example of an OLED with at least one layer produced according to the method of the invention. The OLED is arranged on a substrate 1 , e.g. a glass substrate, and comprises a reflective electrode 2, a hole transport layer 3, an optional cover layer 4, optionally at least one electron blocking layer 5, an emitter layer 6, optionally a hole blocking layer 7, an electron transport layer 8, a partially reflective electrode 9 and an optional decoupling layer 10. The decoupling layer 10 can consist of or contain the UV-sensitive material a-NPD and can have a layer thickness of approx. 100 nm. The reflective electrode 2 can be formed from a 3 nm chromium layer and a 100 nm gold layer, the partially reflective electrode 9 can be a 20 nm silver layer. The gold and silver layers of the electrodes 2 and 9 each form reflective surfaces of a Fabry-Perot cavity, which is formed between the gold and silver layers. The hole transport layer 3 can, for example, contain or consist of Spiro-

[0163] Kailuweit & Uhlemann | Patentanwalte TTP as a UV-sensitive material and can have a layer thickness of approx. 120 nm before irradiation with UV radiation. The Spiro-TTP can be doped with a UV-insensitive dopant, e.g. with 10 wt.% of the p-dopant according to formula (5), in order to maintain the hole-conducting properties of the hole transport layer 3 during UV irradiation. The optional cover layer 4 can consist of TAPC, which can be doped with the UV-insensitive p-dopant according to formula (5), and have a layer thickness of up to approx. 10 nm. The at least one electron blocking layer 5 can be formed with or from the UV-sensitive material TCTA and can be approximately 10 nm thick. The emitter layer 6 can, for example, be a p-i-n heterostructure made of the matrix material DPEPO with 30 wt.% of the emitter 5CzCF3Ph and can have a layer thickness of approx. 20 nm. The hole blocking layer 7 can be formed with or from the UV-sensitive material TPBi and can be approx. 10 nm thick. The electron transport layer 8 can consist of BPhen doped 1 :1 with cesium and can be approx. 280 nm thick. With the method according to the invention, for example, the layer thickness of the UV-sensitive hole transport layer 3 can be reduced after it has been provided on the reflective electrode 2 in order to achieve a specific resonance wavelength and thus emission wavelength of the OLED (see Figure 10).

[0164] Figure 12 shows a second schematic side view of an example of an OLED with at least one layer produced according to the method of the invention. The OLED is arranged on a glass substrate 1 , and comprises a reflective electrode (Cr / Au) 2, a hole transport layer (p-Spiro- TTB) 3, an optional cover layer (NPB) 4, optionally at least one electron blocking layer (NPB:lr(MDQ)2(acac)) 5, an emitter layer (BPhen) 6, an electron transport layer (BPhemCs) 8, a partially reflective electrode (Au / Ag) 9 and an optional layer for optical outcoupling 10. The decoupling layer 10 consists of the UV-sensitive material NPB and has a layer thickness of approx. 82 nm. The reflective electrode 2 is formed from a 3 nm chromium (Cr) layer and a 80 nm gold (Au) layer, the partially reflective electrode 9 is a 2 nm gold (Au) layer and a 19 nm silver (Ag) layer. The gold and silver layers of the electrodes 2 and 9 each form reflective surfaces of a Fabry-Perot cavity, which is formed between the gold and silver layers. The hole transport layer 3 consists of Spiro-TTP as a UV-sensitive material and has a layer thickness of approx. 55 nm before irradiation with UV radiation. The Spiro-TTP can be doped with a UV- insensitive dopant, e.g. with 7 wt.% of the p-dopant according to formula (5), in order to maintain the hole-conducting properties of the hole transport layer 3 during UV irradiation. The cover layer 4 consists of NPB, which can be doped with the UV-insensitive p-dopant according to formula (5), and have a layer thickness of approx. 10 nm. The at least one electron blocking layer 5 is formed by UV-sensitive material NPB:lr(MDQ)2(acac) and can be approximately 20 nm thick. The emitter layer 6 is made of BPhen and has a layer thickness of approx. 10 nm. The electron transport layer 8 consists of BPhen doped 1 :1 with cesium (Cs) (1 :1) and is approx. 65 nm thick. With the method according to the invention, for example, the layer

[0165] Kailuweit & Uhlemann | Patentanwalte thickness of the UV-sensitive hole transport layer 3 can be reduced after it has been provided on the reflective electrode 2 in order to achieve a specific resonance wavelength and thus emission wavelength of the OLED (see Figure 13).

[0166] The method can be used to manufacture individual optical and / or organic-electronic components. However, it can also be used for the manufacture of devices comprising several optical and / or organic-electronic components, e.g. for the manufacture of spatially and / or spectrally resolving detectors or display devices. For this purpose, in groups of layers containing or comprising the UV-sensitive material or in groups of regions of a layer containing or comprising the UV-sensitive material, the layer thicknesses of the layers or the regions can each be reduced to specific layer thicknesses, in particular layer thicknesses that differ from one another within the group. In the case of optical resonators, for example, different resonance wavelengths can be set.

[0167] The groups (pixels) can be arranged in arrays. For example, they can be evenly spaced from each other in at least one spatial direction. The layers or regions of a pixel, which are also referred to as subpixels, can be arranged in a PenTile pixel geometry, for example. For the production of groups or arrays, the UV radiation can advantageously have an intensity distribution or a distribution of locally different irradiation durations. These can be selected in such a way that groups or an array of groups with layers or regions of different layer thicknesses are produced with the intensity distribution or distribution of the irradiation durations. The method can therefore be used to produce groups or organic-electronic components that function in the same way very efficiently. The intensity distribution or distribution of the irradiation durations can also be selected in such a way that production- related deviations in the layer thickness are compensated for. The method is therefore particularly suitable for the production of organic-electronic components which are or will be formed on a common carrier layer or a common substrate or a common layer stack.

[0168] Figure 11 shows a schematic side view of an example of a photodetector with at least one layer produced according to the method of the invention. The photodetector is arranged on a substrate 11, e.g. a glass substrate, and comprises a reflective electrode (anode) 12, a hole transport layer 13, optionally a cover layer 14, optionally at least one electron blocking layer 15, a photosensitive layer 16, optionally a hole blocking layer 17, an electron transport layer 18, a partially reflective electrode (cathode) 19 and an optional cover layer (not shown). The reflective electrode 12 can be formed from a 3 nm chromium layer and a 100 nm gold layer, the partially reflective electrode 19 can be a 30 nm silver layer. The gold and silver layers of the electrodes 12, 19 each form reflective surfaces of a Fabry-Perot cavity, which is formed between the gold and silver layers. The hole transport layer 13 may include a UV-sensitive

[0169] Kailuweit & Uhlemann | Patentanwalte material, such as BF-DPB. The UV-sensitive material can be doped with a UV-insensitive dopant, e.g. with 10 wt.% of the p-dopant according to formula (5), in order to maintain the hole-conducting properties of the hole transport layer 13 during UV irradiation.

[0170] For the sake of simplicity, the optional cover layer 14 can also consist of BF-DPB doped with a UV-insensitive dopant, e.g. 10 wt.% of the Credoxys® p-dopant according to formula (5), and can have a layer thickness of up to approx. 5 nm. The at least one electron blocking layer 15 may, for example, comprise undoped BD-DPB and may be about 5 nm thick. The photosensitive layer 16 may, for example, comprise a bulk heterostructure of Ceo fullerene with 5 wt.% D7 and may have a layer thickness of about 75 nm. The hole blocking layer 17 may be formed from bis-HFI-NTCDI and may have a layer thickness of about 5 nm. The electron transport layer 18 may also comprise bis-HFI-NTCDI doped with 5 wt.% W2(hpp)4.

[0171] For a first-order resonance, the layer thickness of the electron transport layer 18 can be approx. 90 nm and the layer thickness of the charge transport layer 13 before irradiation with UV radiation can be approx. 110 nm. For a second-order resonance, the layer thickness of the electron transport layer 18 can be approx. 105 nm and the layer thickness of the charge transport layer 13 before irradiation with the UV radiation can be approx. 445 nm. With the method according to the invention, for example, the layer thickness of the UV-sensitive hole transport layer 13 can be reduced after it has been provided on the reflective electrode 12 in order to set a specific resonance wavelength and thus detectable wavelength of the photodetector. A detectable wavelength can be set in a wavelength range of 1600 nm to 650 nm.

[0172] In further examples the UV sensitive layer material or layer is microstructured according to Fig. 18 or Fig. 19. The microstructuring can be achieved by using a photomask, wherein a photomask is an opaque plate with transparent areas that allow light to shine through in a defined pattern. The sample is placed under the light source and illuminated for a certain time, while the photomask is placed on top of the sample.

[0173] Kailuweit & Uhlemann | Patentanwalte

Claims

Patent claims1. A method for producing a layer with a defined layer thickness for an optical and / or organic- electronic component, in which: a layer comprising at least one UV-sensitive material or consisting of at least one UV- sensitive material is provided, wherein the UV-sensitive material is UV-sensitive such that the volume of the UV-sensitive material decreases by irradiation with UV radiation, and the layer is irradiated with the UV radiation at least in one region of the layer, so that the layer thickness of the layer decreases in the region which is irradiated with the UV radiation and the layer thickness is adjusted or reduced to a given or predetermined value (target value) by the irradiation with the UV radiation, and the irradiation with the UV radiation takes place in an oxygen and nitrogen atmosphere, with at least 2 % by volume each of oxygen and nitrogen, preferably with at least 5 % by volume each of oxygen and nitrogen, or in air.

2. The method according to claim 1 , characterized in that the UV-sensitive material is an organic matrix material, charge transport material, charge injection material or charge blocking material for an optical and / or organic-electronic device.

3. The method according to claim 1 or 2, characterized in that the UV-sensitive material is selected from the group of fullerenes.

4. The method according to claim 3, characterized in that the UV-sensitive material is a Ceo or C70 fullerene.

5. The method according to claim 1 or 2, characterized in that the UV-sensitive material is selected from the group of triarylamine compounds, the triarylamine compound having at least two unsubstituted or substituted phenyl groups on the nitrogen atom.

6. The method according to claim 1 or 2, characterized in that the UV-sensitive material is selected from the compounds of formula 1 :Kailuweit & Uhlemann | Patentanwalte(Formula 1), wherein R1, R2 and / or R3 are independently selected from H and alkyl, alkoxy-, aryl- or heteroaryl groups, in particular carbazole residual groups.

7. The method according to claim 6, characterized in that the UV-sensitive material is 4, 4', 4"- tris(carbazol-9-yl)-triphenylamine or 4,4'-bis(carbazol-9-yl)-triphenylamine.

8. The method according to claim 1 or 2, characterized in that the UV-sensitive material is selected from the compounds of formula 2:(Formula 2), wherein Ar1 , Ar2. Ar3 and Ar4 are independently selected from aryl radicals and heteroaryl radicals.

9. The method according to claim 8, characterized in that the aryl radicals and heteroaryl radicals are selected such that the residual groups Ar1 and Ar2 and Ar3 and Ar4 together with the nitrogen atoms of formula 2 each form a diarylamine or diheteroarylamine group.

10. The method according to claim 8 or 9, characterized in that the UV-sensitive material is selected from N,N,N',N'-tetraphenyl-1 ,1'-biphenyl-4,4'-diamine, N,N'-bis(3-methylphenyl)- N,N'-diphenyl-4,4'-biphenyldiamine, N,N'-bis(4-methylphenyl)-N,N'-diphenyl-4,4'- biphenyldiamine, N-(3-methylphenyl)-N'-(4-methylphenyl)-N,N'-diphenyl-4,4'- biphenyldiamine, N,N-bis(3-methylphenyl)-N',N'-diphenyl-4,4'-biphenyldiamine, N,N'-bis(4- methylphenyl)-N,N'-diphenyl-4,4'-biphenyldiamine, N,N'-bis(4-methylphenyl)-N,N'-diphenyl- 4,4'-biphenyldiamine, N,N,N',N'-tetrakis(4-methoxyphenyl)-4,4'-biphenyldiamine, N,N'-bis(4-Kailuweit & Uhlemann | Patentanwaltemethoxy-2-methylphenyl)-N,N'-diphenylbenzidine, N,N'-di(4-biphenylyl)-N,N'- diphenylbenzidine, N,N,N',N'-tetra(4-biphenylyl)-4,4'-biphenyldiamine, N, N'-bis-(1 - naphthalenyl)-N,N'-bis-phenyl-(1 ,1'-biphenyl)-4,4'-diamine, N4,N4'-di(naphthalen-2-yl)- N4,N4'-diphenyl-[1 ,1 '-biphenyl]-4,4'-diamine, 2-methyl-N-[4-[4-(N-(2-methylnaphthalen-1- yl)anilino)phenyl]phenyl]-N-phenylnaphthalen-1 -amine, N,N'-di-[(9-phenanthrenyl)-N,N - diphenyl]-1 ,1 '-biphenyl-4,4'-diamine and N4,N4'-bis(9,9-dimethyl-9H-fluoren-2-yl)-N4,N4'- diphenylbiphenyl-4, 4 '-diamine.

11. The method according to claim 1 or 2, characterized in that the UV-sensitive material is selected from the compounds of formula 3:(Formula 3), wherein Ar1 , Ar2, Ar3, Ar4, Ar5, Ar6, Ar7 and Ar8 are independently selected from aryl radicals or heteroaryl radicals.

12. The method according to claim 11 , characterized in thatArl to Ar8 are selected such that the nitrogen atoms of formula 3 together with the residual groups Ar1 and Ar2, Ar3 and Ar4, Ar5 and Ar6 and Ar7 and Ar8 each form a diarylamine or diheteroarylamine group.

13. The method according to claim 11 or 12, characterized in that the UV-sensitive material is selected from 2,2',7,7'-tetrakis(diphenylamino)-9,9'-spirobifluorene, 2,2',7,7'-tetra(N,N-di-p- tolyl)amino-9,9-spirobifluorene, 2,2',7,7'-octa(m-tolylamine)-9,9-spirobifluorene, 2, 2', 7,7'- tetrakis-(N,N-di-p-methoxyphenylamino)-9,9'-spirobifluorene, N2,N2',N7,N7'-tetrakis-(2- methoxyphenyl)-N2,N2', N7,N7'-tetrakis(4-methoxyphenyl)-9,9'-spirobi[fluorene]-2,2',7,7'-tetra amine, N2,N2',N7,N7'-tetrakis(3-methoxyphenyl)-N2,N2',N7,N7'-tetrakis(4-methoxyphenyl)- 9,9'-spirobi[fluorene]-2,2',7,7'-tetraamine, N2,N2',N7,N7'-tetrakis(2,4-dimethoxyphenyl)- N2,N2',N7,N7'-tetraphenyl-9,9'-spirobi[fluorene]-2,2',7,7'-tetraamine, 2,2',7,7'-tetrakis(4,4'- dimethoxy-3-methyldiphenylamino)-9,9'-spirobifluorene, 2,2',7,7'-tetrakis[N-Kailuweit & Uhlemann | Patentanwaltenaphthalenyl(phenyl)-amino]-9,9'-spirobifluorene and 2,2',7,7'-tetra(9H-carbazol-9-yl)-9,9'- spirobifluorene.

14. The method according to claim 1 or 2, characterized in that the UV-sensitive material is selected from the compounds of formula 4:(Formula 4), wherein R1, R2 and R3 are independently selected from aryl and nitrogen heteroaryls groups, wherein at least one nitrogen heteroatom is connected to the benzene of formula 4 via a carbon atom.

15. The method according to claim 14, wherein the nitrogen heteroatom connected to the benzene of formula 4 via the carbon atom has a phenyl side group.

16. The method according to claim 14 or 15, characterized in that the UV-sensitive material is selected from 2,2',2"-(1 ,3,5-benzenetriyl)-tris(1-phenyl-1-H-benzimidazole), 1 ,3,5-tris[N-(4- carbazolylphenyl) benzimidazol-2-yl]benzene and 1 ,3,5-tris[N-(4- diphenylaminophenyl)benzimidazol-2-yl]benzene.

17. The method according to claim 1 , 2 or 11 , characterized in that the UV-sensitive material is a material which forms a polymer with intrinsic microporosity when exposed to UV radiation.

18. The method according to claim 17, characterized in that the UV-sensitive material is selected from the group of spirofluorenes, spirobifluorenes orTrdger bases.

19. The method according to one of the preceding claims, characterized in that the UV-sensitive material is molecularly doped with at least one UV-insensitive dopant, in particular with at least one UV-insensitive dopant selected from the group of the 3-radialenes or the p-dopant according to formula (5):Kailuweit & Uhlemann | PatentanwalteFormula (5).

20. The method according to one of the preceding claims, characterized in that the layer is provided without additional photochemical additives in the layer.21 . The method according to one of the preceding claims, characterized in that the irradiation with the UV radiation takes place before a next layer is formed on the layer comprising or consisting of the UV-sensitive material.

22. The method according to one of the preceding claims, characterized in that the UV radiation has a wavelength in the range of 50 nm to 450 nm, preferably in the range of 50 nm to 300 nm, more preferably in the range of 50 nm to 200 nm.

23. The method according to any one of the preceding claims, characterized in that the layer is a layer for an OLED, an organic integrated circuit, an organic field-effect transistor, an organic thin-film transistor, an organic light-emitting transistor, an organic solar cell, an organic optical detector, an organic photoreceptor, an organic field quench device, a light-emitting electrochemical cell or an organic laser diode.

24. The method according to one of the preceding claims, characterized in that the layer is a layer for an optical resonator, in particular a layer for an optical resonator of an optoelectronic component.

25. The method according to one of the preceding claims, characterized in that the irradiation with the UV radiation is carried out as a function of a layer thickness, an intensity of an absorption band, a transmission band, a Raman or Stokes shift and / or an electrical conductivity of the layer.Kailuweit & Uhlemann | Patentanwalte26. The method according to one of the preceding claims, characterized in that a plurality of layers or a plurality of regions of a layer are irradiated with UV radiation of the same or different wavelengths, irradiation intensity and / or irradiation duration.

27. Layer produced by a method according to any one of claims 1 to 26.

28. Optical and / or organic-electronic component, characterized in that the optical and / or organic- electronic component has at least one layer produced in a method according to one of claims 1 to 26.

29. Use of a method according to any one of claims 1 to 26 for producing at least one layer for an optical and / or organic-electronic component, in particular for producing at least one layer of a display device or a spatially and / or spectrally resolving photodetector.Kailuweit & Uhlemann | Patentanwalte

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