Substrate processing apparatus, fluid supply system, and substrate processing method

Abstract

A substrate processing apparatus according to one aspect of the present disclosure performs processing for drying a substrate by replacing a liquid film of a drying liquid formed on the substrate with a processing fluid in a supercritical state, and comprises a processing container and a fluid supply unit that supplies the processing fluid into the processing container. The fluid supply unit has a plurality of first supply lines connected in parallel and a second supply line that connects the plurality of first supply lines and the processing container. Each of the plurality of first supply lines is provided with a heater and an on-off valve in order from the upstream side of the flow of the processing fluid, and the second supply line is provided with a filter that captures particles contained in the processing fluid.

Description

Substrate Processing Apparatus, Fluid Supply System, and Substrate Processing Method

[0001] The present disclosure relates to a substrate processing apparatus, a fluid supply system, and a substrate processing method.

[0002] Techniques for drying a substrate using a supercritical fluid are known. Patent Document 1 discloses a configuration for switching the temperature of the supercritical fluid supplied to a substrate.

[0003] International Publication No. 2024 / 084757

[0004] The present disclosure provides a technique capable of reducing a change in the direction of a fluid flowing through a filter.

[0005] A substrate processing apparatus according to one aspect of the present disclosure is a substrate processing apparatus that performs a process of drying a substrate by replacing a liquid film of a drying liquid formed on the substrate with a processing fluid in a supercritical state, and includes a processing container and a fluid supply unit that supplies the processing fluid into the processing container. The fluid supply unit has a plurality of first supply lines connected in parallel and a second supply line connecting the plurality of first supply lines and the processing container. In each of the plurality of first supply lines, a heater and an on-off valve are provided in order from the upstream side of the flow of the processing fluid, and a filter that collects particles contained in the processing fluid is provided in the second supply line.

[0006] According to the present disclosure, it is possible to reduce a change in the direction of a fluid flowing through a filter.

[0007] FIG. 1 is a diagram showing a substrate processing apparatus according to an embodiment. FIG. 2 is a flowchart showing a substrate processing method according to an embodiment. FIG. 3 is a diagram showing a pressure change in a processing container in the substrate processing method according to an embodiment. FIG. 4 is a diagram (1) showing a substrate processing method according to an embodiment. FIG. 5 is a diagram (2) showing a substrate processing method according to an embodiment. FIG. 6 is a diagram showing a substrate processing apparatus according to a first modification. FIG. 7 is a diagram showing a substrate processing apparatus according to a second modification.

[0008] Hereinafter, exemplary embodiments of the present disclosure, not limited to those described herein, will be described with reference to the attached drawings. In all attached drawings, identical or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted.

[0009] [Substrate Processing Apparatus] Referring to Figure 1, a substrate processing apparatus 10 according to an embodiment will be described. Figure 1 is a diagram showing a substrate processing apparatus 10 according to an embodiment.

[0010] The substrate processing apparatus 10 is a device that dries a substrate W by replacing the liquid film of the drying solution formed on the substrate W with a processing fluid in a supercritical state. The substrate processing apparatus 10 includes a processing unit 11, a fluid supply unit 12, a discharge unit 13, and a control circuit 14.

[0011] The processing unit 11 includes a processing container 111 and a holding unit 112. The processing container 111 is a container with a processing space formed inside that can accommodate, for example, a substrate W with a diameter of 300 mm. The substrate W is, for example, a semiconductor wafer. The holding unit 112 is provided inside the processing container 111. The holding unit 112 holds the substrate W horizontally. The holding unit 112 is, for example, integrally configured with the processing container 111. The holding unit 112 may also be a holding plate configured separately from the processing container 111. The processing unit 11 has a pressure sensor P10 that detects the pressure inside the processing container 111.

[0012] The fluid supply unit 12 includes a processing fluid supply source S11, first supply lines L11a and L11b, and a second supply line L12.

[0013] The processing fluid supply source S11 is a source of processing fluid. The processing fluid is, for example, liquid carbon dioxide (CO2). ２ ) is acceptable.

[0014] The first supply line L11a is connected upstream to the processing fluid supply source S11 and downstream to the second supply line L12. The first supply line L11a is equipped with a heater HE11a, a temperature sensor T11a, and an on-off valve V11a in that order from upstream. The heater HE11a heats the processing fluid supplied from the processing fluid supply source S11 to a first temperature and supplies the fluid at the first temperature downstream. The first temperature is between 40°C and 100°C, for example, 60°C. Because the first temperature is relatively low, the first supply line L11a is also called a low-temperature line. The heater HE11a includes, for example, a cast-in heater. The heater HE11a may also include a tank in which a heater is embedded in the wall or the like. The temperature sensor T11a detects the temperature of the processing fluid flowing through the first supply line L11a. The on-off valve V11a is a valve that switches the flow of the processing fluid on and off. When the on / off valve V11a is open, it allows the processed fluid to flow into the downstream second supply line L12, and when it is closed, it does not allow the processed fluid to flow into the downstream second supply line L12.

[0015] A line heater LH11a is provided downstream of the heater HE11a in the first supply line L11a. The line heater LH11a heats the first supply line L11a downstream of the heater HE11a. This suppresses the temperature drop of the processing fluid flowing through the first supply line L11a.

[0016] The first supply line L11b is connected in parallel with the first supply line L11a. The upstream end of the first supply line L11b is connected to the processing fluid supply source S11, and the downstream end is connected to the second supply line L12. The first supply line L11b is equipped with a heater HE11b, a temperature sensor T11b, and an on-off valve V11b, in that order from upstream. The heater HE11b heats the processing fluid supplied from the processing fluid supply source S11 to a second temperature and supplies the fluid at the second temperature downstream. The second temperature is higher than the first temperature. The second temperature is between 100°C and 150°C, for example, 120°C. Because the second temperature is relatively high, the first supply line L11b is also called a high-temperature line. The heater HE11b includes, for example, a cast-in heater. The heater HE11b may also include a tank in which a heater is embedded in the wall or the like. The temperature sensor T11b detects the temperature of the processing fluid flowing through the first supply line L11b. The on-off valve V11b is a valve that switches the flow of the processing fluid on and off. When the on-off valve V11b is open, it allows the processing fluid to flow to the downstream second supply line L12, and when it is closed, it does not allow the processing fluid to flow to the downstream second supply line L12.

[0017] A line heater LH11b is provided downstream of the heater HE11b in the first supply line L11b. The line heater LH11b heats the first supply line L11b downstream of the heater HE11b. This suppresses the temperature drop of the processing fluid flowing through the first supply line L11b.

[0018] The second supply line L12 is connected upstream to the first supply lines L11a and L11b, and downstream to the side wall of the processing container 111. A filter F12, a temperature sensor T12, and a pressure sensor P12 are provided in the second supply line L12 in that order from upstream. The filter F12 collects particles contained in the processing fluid flowing through the second supply line L12. This reduces the adhesion of particles to the surface of the substrate W during substrate processing using the processing fluid. The temperature sensor T12 detects the temperature of the processing fluid flowing through the second supply line L12. The pressure sensor P12 detects the pressure in the second supply line L12.

[0019] A line heater LH12 is provided in the second supply line L12. The line heater LH12 heats the second supply line L12. This suppresses the temperature drop of the processing fluid flowing through the second supply line L12.

[0020] In the fluid supply unit 12, when the on-off valve V11b is closed and the on-off valve V11a is opened, the processing fluid heated to a first temperature by the heater HE11a is supplied into the processing container 111 through the first supply line L11a and the second supply line L12. On the other hand, when the on-off valve V11a is closed and the on-off valve V11b is opened, the processing fluid heated to a second temperature by the heater HE11b is supplied into the processing container 111 through the first supply line L11b and the second supply line L12. In this way, the temperature of the processing fluid flowing into the processing container 111 can be changed by exclusively opening and closing the on-off valves V11a and V11b. Furthermore, when both the on-off valves V11a and V11b are opened, the processing fluid heated to a first temperature by the heater HE11a and the processing fluid heated to a second temperature by the heater HE11b are mixed in the second supply line L12 and supplied into the processing container 111. In this case, a processing fluid at an intermediate temperature between the first and second temperatures can be supplied into the processing container 111. In this way, by controlling the opening and closing of the on-off valves V11a and V11b, the temperature of the processing fluid flowing into the processing container 111 can be changed in three stages.

[0021] The discharge section 13 has a discharge line L19. The upstream end of the discharge line L19 is connected to the processing container 111. The discharge line L19 is provided with an on-off valve V19 and a back pressure valve BV19 in order from upstream. The on-off valve V19 is a valve that switches the flow of the processing fluid on and off. When the on-off valve V19 is open, it allows the processing fluid to flow to the downstream back pressure valve BV19, and when it is closed, it does not allow the processing fluid to flow to the downstream back pressure valve BV19. The back pressure valve BV19 maintains the primary side pressure at the set pressure by adjusting the valve opening to allow the processing fluid to flow to the secondary side when the primary side pressure of the discharge line L19 exceeds the set pressure. For example, the set pressure of the back pressure valve BV19 is adjusted by the control circuit 14.

[0022] A line heater LH19 is provided in the discharge line L19. The line heater LH19 heats the discharge line L19. This suppresses the temperature drop of the processed fluid flowing through the discharge line L19.

[0023] The control circuit 14 receives measurement signals from various sensors (temperature sensors T11a, T11b, T12, pressure sensors P10, P12, etc.) and transmits control signals to various functional elements. The control signals include, for example, opening and closing signals for on-off valves V11a, V11b, V12, V19, a set pressure signal for back pressure valve BV19, and temperature signals for line heaters LH11a, LH11b, LH12, LH19. For example, the control circuit 14 is configured to change the temperature of the processing fluid flowing through the processing container 111 by controlling the opening and closing of on-off valves V11a and V11b according to the processing state of the substrate W in the processing container 111.

[0024] The control circuit 14 is, for example, a computer. The control circuit 14 comprises an arithmetic unit 141 such as a CPU (Central Processing Unit) and a storage unit 142 such as memory. The storage unit 142 stores programs that control various processes performed in the substrate processing device 10. The control circuit 14 controls the operation of the substrate processing device 10 by causing the arithmetic unit 141 to execute the programs stored in the storage unit 142.

[0025] The control circuit 14 includes electronic circuits such as a CPU, FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit), and performs various control operations described in this specification by executing instruction codes stored in memory or by designing the circuit for special applications.

[0026] [Substrate Processing Method] Referring to Figures 2 to 5, a substrate processing method performed using the substrate processing apparatus 10 will be described. The substrate processing method shown below is automatically executed under the control of the control circuit 14 based on the processing recipe and control program stored in the storage unit 142.

[0027] Figure 2 is a flowchart showing the substrate processing method according to the embodiment. Figure 3 is a diagram showing the pressure change inside the processing container 111 in the substrate processing method according to the embodiment. In Figure 3, the horizontal axis represents the processing time, and the vertical axis represents the pressure inside the processing container 111 detected by the pressure sensor P10. Figures 4 and 5 are diagrams showing the substrate processing method according to the embodiment.

[0028] As shown in Figure 2, the substrate processing method according to this embodiment includes a preparation step ST11, a first boost step ST12, a second boost step ST13, a flow step ST14, and a depressurization step ST15. Each step will be described below.

[0029] In preparation step ST11, the substrate W is brought into the processing container 111. The substrate W is cleaned and placed on the holding unit 112 with isopropyl alcohol (IPA) filling the recesses of the surface pattern.

[0030] The first pressurization step ST12 is performed after the preparation step ST11. In the first pressurization step ST12, as shown in Figure 4, the on-off valve V11a is opened and the on-off valves V11b and V19 are closed. As a result, the processing fluid from the processing fluid supply source S11 is supplied into the processing container 111 via the first supply line L11a. The processing fluid is heated to a first temperature by a heater HE11a installed in the middle of the first supply line L11a and supplied into the processing container 111. As the processing fluid at the first temperature is supplied into the processing container 111, the temperature of the substrate W changes to the first temperature. In the first pressurization step ST12, the pressure of the processing fluid supplied into the processing container 111 is lower than the critical pressure. Therefore, as shown in Figure 3, the pressure inside the processing container 111 gradually increases.

[0031] The pressure inside the processing container 111 is detected by the pressure sensor P10, and the first pressurization step ST12 continues until the pressure inside the processing container 111 reaches the first pressure. When the pressure inside the processing container 111 reaches the first pressure, the first pressurization step ST12 ends, and the process moves to the second pressurization step ST13. The first pressure is lower than the critical pressure. In this case, liquefaction of the processing fluid in the first supply line L11a and the processing container 111 can be prevented, and particle generation can be reduced. When carbon dioxide is used as the processing fluid, the critical pressure of carbon dioxide is approximately 7 MPa, so the first pressure may be 3 MPa or more and less than 7 MPa. In this case, liquefaction of the processing fluid in the first supply line L11a can be easily prevented. When carbon dioxide is used as the processing fluid, the first pressure may be 6 MPa or more and less than 7 MPa. In this case, pattern collapse can be easily suppressed.

[0032] The second pressure boosting step ST13 is performed after the first pressure boosting step ST12. In the second pressure boosting step ST13, the supply route of the processing fluid into the processing container 111 is changed. Specifically, as shown in Figure 5, the on-off valve V11b is opened, and the on-off valves V11a and V19 are closed. As a result, the processing fluid from the processing fluid supply source S11 is supplied into the processing container 111 via the first supply line L11b. The processing fluid is heated to a second temperature by a heater HE11b installed in the middle of the first supply line L11b and supplied into the processing container 111. Therefore, the temperature of the processing fluid supplied into the processing container 111 rises rapidly. As a result of supplying processing fluid at the second temperature into the processing container 111, the temperature of the substrate W changes rapidly to the second temperature. In the second pressure boosting step ST13, since the on-off valve V19 is closed, the pressure inside the processing container 111 rises gradually, as shown in Figure 3. In the second pressurization step ST13, the pressure of the processing fluid supplied into the processing container 111 is lower than the critical pressure. Therefore, the processing fluid is supplied into the processing container 111 in a gaseous state. Subsequently, as the filling of the processing fluid into the processing container 111 progresses, the pressure inside the processing container 111 increases, and when the pressure inside the processing container 111 exceeds the critical pressure, the processing fluid present in the processing container 111 becomes supercritical. In the second pressurization step ST13, when the pressure inside the processing container 111 reaches a processing pressure higher than the critical pressure, the second pressurization step ST13 is terminated and the process moves to the flow step ST14.

[0033] The flow process ST14 is performed after the second pressure boosting process ST13. In the flow process ST14, the on-off valves V11b and V19 are opened, and the on-off valve V11a is closed. As a result, the processing fluid from the processing fluid supply source S11 is supplied into the processing container 111 via the first supply line L11b. The processing fluid supplied into the processing container 111 is discharged from the processing container 111 via the discharge line L19. In the flow process ST14, the supply of processing fluid into the processing container 111 and the discharge of processing fluid from the processing container 111 occur simultaneously. Therefore, as shown in Figure 3, the pressure inside the processing container 111 is maintained at approximately a constant level. By performing the flow process ST14, the replacement of IPA with processing fluid in the recesses of the pattern on the substrate W is promoted. Once the replacement of IPA with processing fluid in the recesses of the pattern is complete, the flow process ST14 is terminated, and the process moves on to the depressurization process ST15.

[0034] The depressurization process ST15 is performed after the flow process ST14. In the depressurization process ST15, the on-off valve V19 is opened, and the on-off valves V11a and V11b are closed. As a result, no processing fluid is supplied into the processing container 111, and the processing fluid is discharged from the processing container 111. Therefore, as shown in Figure 3, the pressure inside the processing container 111 gradually decreases. When the pressure inside the processing container 111 falls below the critical pressure of the processing fluid due to the depressurization process ST15, the supercritical processing fluid vaporizes and separates from the recesses of the pattern. This completes the drying process for one substrate W.

[0035] In this embodiment, a filter F12 is provided in the second supply line L12 after the first supply line L11a and the first supply line L11b merge. In this case, whether the processing fluid is supplied to the processing container 111 from the first supply line L11a or from the first supply line L11b, the direction of the processing fluid flowing through the filter F12 is unidirectional, from upstream to downstream. As a result, no back pressure is applied to the filter F12, making it less likely to be damaged. Furthermore, since there is no flow of processing fluid from the downstream side to the upstream side of the filter F12, particles collected by the filter F12 are less likely to be ejected. In addition, it is possible to reduce the diffusion of IPA residue and the like from the processing container 111 into the second supply line L12 and contamination of the secondary side of the filter F12.

[0036] The control circuit 14 may control heaters HE11a and HE11b so that the temperature of the processing fluid supplied from the first supply line L11a to the second supply line L12 is different from the temperature of the processing fluid supplied from the first supply line L11b to the second supply line L12. In this case, processing fluids at different temperatures can be supplied into the processing container 111.

[0037] The control circuit 14 may control the heater HE11a provided in the first supply line L11a and the heater HE11b provided in the first supply line L11b so that the temperature detected by the temperature sensor T12 is maintained at or above the critical temperature of the processing fluid. In this case, liquefaction of the processing fluid flowing through the filter F12 can be prevented, and a decrease in the particle collection efficiency of the filter F12 can be suppressed.

[0038] The control circuit 14 may control the setting temperature of the line heater LH12 to a temperature higher than the setting temperature of the heater HE11a, which has the lower setting temperature among the heaters HE11a and HE11b. In this case, it is possible to prevent the processing fluid heated to the first temperature in the heater HE11a of the first supply line L11a from liquefying when it flows through the second supply line L12. Therefore, a decrease in the particle collection efficiency in the filter F12 can be suppressed. The temperature higher than the setting temperature of the heater HE11a may be the same as the second temperature. In this case, it is not necessary to change the setting temperature of the line heater LH12 when transitioning from the first pressurization process ST12 to the second pressurization process ST13. Therefore, the temperature stabilization time associated with changing the setting temperature of the line heater LH12 is not required.

[0039] The control circuit 14 may control the supply of processing fluid from the first supply line L11a and the first supply line L11b to the second supply line L12 simultaneously when transitioning from the first boosting step ST12 to the second boosting step ST13. In this case, since the processing fluid continues to flow from the upstream side to the downstream side of the filter F12 when transitioning from the first boosting step ST12 to the second boosting step ST13, backflow of processing fluid into the filter F12 is less likely to occur.

[0040] In the above embodiment, the case in which a first supply line L11a equipped with heater HE11a and a first supply line L11b equipped with heater HE11b are connected in parallel was described, but the number of first supply lines is not limited to this. Three or more first supply lines may be connected in parallel. In this case, the temperature of the processing fluid flowing through the processing container 111 can be changed more precisely.

[0041] [First Modification] Referring to Figure 6, the substrate processing apparatus 10A according to the first modification will be described. Figure 6 is a diagram showing the substrate processing apparatus 10A according to the first modification.

[0042] The substrate processing apparatus 10A is different from the substrate processing apparatus 10 in that the fluid supply unit 12 has a third supply line L13 in addition to the first supply lines L11a, L11b and the second supply line L12. In other respects, it may be the same as the substrate processing apparatus 10. Hereinafter, the description will focus on the differences from the substrate processing apparatus 10.

[0043] The fluid supply unit 12 includes a processing fluid supply source S11, first supply lines L11a, L11b, a second supply line L12, and a third supply line L13.

[0044] In addition to the filter F12, the temperature sensor T12, and the pressure sensor P12, an on-off valve V12 is provided in the second supply line L12. The on-off valve V12 is provided downstream of the filter F12. The on-off valve V12 is a valve that switches on and off the flow of the processing fluid. In the open state, the on-off valve V12 allows the processing fluid to flow to the downstream processing vessel 111, and in the closed state, it does not allow the processing fluid to flow to the downstream processing vessel 111.

[0045] The third supply line L13 branches from the second supply line L12 downstream of the filter F12 and is connected to the bottom of the processing vessel 111. For example, the upstream of the third supply line L13 is connected to the second supply line L12 between the filter F12 and the on-off valve V12, and the downstream is connected to the processing vessel 111. An on-off valve V13 is provided in the third supply line L13. The on-off valve V13 is a valve that switches on and off the flow of the processing fluid. In the open state, the on-off valve V13 allows the processing fluid to flow to the downstream processing vessel 111, and in the closed state, it does not allow the processing fluid to flow to the downstream processing vessel 111.

[0046] A line heater LH13 is provided in the third supply line L13. The line heater LH13 heats the third supply line L13. Thereby, the temperature drop of the processing fluid flowing through the third supply line L13 can be suppressed.

[0047] The control circuit 14 may control the supply of the processing fluid from the third supply line L13 into the processing vessel 111 in the first boosting step ST12 and the second boosting step ST13. Specifically, the control circuit 14 may control to close the on-off valve V12 and open the on-off valve V13 in the first boosting step ST12 and the second boosting step ST13. In this case, the processing fluid supplied into the processing vessel 111 does not directly flow toward the surface of the substrate W or the space near the surface, but after colliding with the lower surface of the holding portion 112, it spreads radially along the lower surface of the holding portion 112 and then flows into the space on the upper surface side of the substrate W. That is, there is no flow of the processing fluid directly toward the surface of the substrate W or the space near the surface. For this reason, the evaporation of IPA caused by supplying the processing fluid in a gaseous state into the processing vessel 111 is reduced.

[0048] The control circuit 14 may control the supply of the processing fluid from the second supply line L12 into the processing vessel 111 in the circulation step ST14. Specifically, the control circuit 14 may control to close the on-off valve V13 and open the on-off valve V12 in the circulation step ST14. In the circulation step ST14, since the pressure in the processing vessel 111 is maintained at a pressure sufficiently higher than the critical pressure, evaporation of IPA does not occur even if the processing fluid collides with the surface of the substrate W or flows near the surface of the substrate W.

[0049] In the substrate processing apparatus 10A according to the first modification, similar to the substrate processing apparatus 10 according to the embodiment, a filter F12 is provided in the second supply line L12 after the first supply line L11a and the first supply line L11b merge. In this case, in both the case of supplying the processing fluid from the first supply line L11a into the processing vessel 111 and the case of supplying the processing fluid from the first supply line L11b into the processing vessel 111, the direction of the processing fluid flowing through the filter F12 is in one direction from the upstream side to the downstream side. For this reason, since no back pressure is applied to the filter F12, the filter F12 is difficult to be damaged. Further, since no flow of the processing fluid from the downstream side to the upstream side of the filter F12 occurs, the particles collected by the filter F12 are difficult to eject. Also, it is possible to reduce the diffusion of IPA residues and the like in the processing vessel 111 into the second supply line L12 and the contamination of the secondary side of the filter F12.

[0050] [Second Modification] Referring to Figure 7, the substrate processing apparatus 10B according to the second modification will be described. Figure 7 is a diagram showing the substrate processing apparatus 10B according to the second modification.

[0051] The substrate processing apparatus 10B differs from the substrate processing apparatus 10 in that the fluid supply unit 12 has an inert gas supply source S14 in addition to the processing fluid supply source S11, and the fluid supply unit 12 has a fourth supply line L14 in addition to the first supply lines L11a, L11b and the second supply line L12. Other aspects may be the same as those of the substrate processing apparatus 10. The following will focus on the differences from the substrate processing apparatus 10.

[0052] The fluid supply unit 12 includes a processing fluid supply source S11, an inert gas supply source S14, first supply lines L11a and L11b, second supply line L12, and fourth supply line L14.

[0053] The inert gas supply source S14 is a source of inert gas. The inert gas is, for example, nitrogen (N ２ ) is a gas. The inert gas may be air.

[0054] The second supply line L12 is equipped with a filter F12, a temperature sensor T12, and a pressure sensor P12, as well as an on-off valve V12. The on-off valve V12 is located upstream of the filter F12. When the on-off valve V12 is open, it allows the processed fluid to flow to the downstream filter F12, and when it is closed, it does not allow the processed fluid to flow to the downstream filter F12.

[0055] The fourth supply line L14 is connected to the second supply line L12 upstream of the filter F12. For example, the fourth supply line L14 is connected upstream to the inert gas supply source S14 and downstream to the second supply line L12 between the on-off valve V12 and the filter F12. The fourth supply line L14 supplies inert gas to the second supply line L12. The fourth supply line L14 is provided with a check valve C14 and an on-off valve V14 in that order from upstream. The check valve C14 prevents backflow of the processing fluid from the second supply line L12 to the inert gas supply source S14. The on-off valve V14 is a valve that switches the flow of inert gas on and off. When the on-off valve V14 is open, it allows inert gas to flow to the downstream second supply line L12, and when it is closed, it does not allow inert gas to flow to the downstream second supply line L12.

[0056] The control circuit 14 may control the supply of inert gas from the fourth supply line L14 to the second supply line L12 between processing of one substrate W and processing of the next substrate W. In this case, the second supply line L12, which has become hot due to processing of the first substrate W, can be cooled. The temperature of the inert gas may be higher than the first temperature. In this case, since the temperature of the second supply line L12 does not fall below the first temperature, the processing fluid flowing through the second supply line L12 during processing of the next substrate W is less likely to liquefy. The temperature of the inert gas may be lower than the second temperature.

[0057] In the substrate processing apparatus 10B according to the second modification, similar to the substrate processing apparatus 10 according to the embodiment, a filter F12 is provided in the second supply line L12 after the first supply line L11a and the first supply line L11b merge. In this case, whether the processing fluid is supplied into the processing container 111 from the first supply line L11a or from the first supply line L11b, the direction of the processing fluid flowing into the filter F12 is unidirectional, from upstream to downstream. As a result, no back pressure is applied to the filter F12, making it less likely to be damaged. Also, since there is no flow of processing fluid from the downstream side to the upstream side of the filter F12, particles collected by the filter F12 are less likely to be ejected. Furthermore, it is possible to reduce the diffusion of IPA residue and the like in the processing container 111 into the second supply line L12 and contamination of the secondary side of the filter F12.

[0058] Furthermore, the substrate processing apparatus 10B according to the second modification may have the third supply line L13 of the substrate processing apparatus 10A according to the first modification. That is, the substrate processing apparatus 10B may have the third supply line L13 and the fourth supply line L14.

[0059] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0060] This international application claims priority based on Japanese Patent Application No. 2024-191919, filed on 31 October 2024, and the entire contents of said application are incorporated herein by reference.

[0061] 10, 10A, 10B Substrate processing device 111 Processing container 12 Fluid supply unit F12 Filter HE11a, HE11b Heater V11a, V11b On / off valve L11a, L11b First supply line L12 Second supply line

Claims

1. A substrate processing apparatus for drying a substrate by replacing the liquid film of a drying solution formed on the substrate with a processing fluid in a supercritical state, comprising: a processing container; and a fluid supply unit for supplying the processing fluid into the processing container, wherein the fluid supply unit has a plurality of first supply lines connected in parallel; and a second supply line connecting the plurality of first supply lines to the processing container, each of the plurality of first supply lines is provided with a heater and an on / off valve in order from the upstream side of the flow of the processing fluid, and the second supply line is provided with a filter for collecting particles contained in the processing fluid, 2. The substrate processing apparatus according to claim 1, comprising a control circuit for controlling the fluid supply unit, wherein the control circuit controls the heater such that the temperatures of the processing fluid supplied from each of the plurality of first supply lines to the second supply line are different from each other.

3. The substrate processing apparatus according to claim 1, comprising a control circuit for controlling the fluid supply unit, wherein the fluid supply unit has a temperature sensor provided downstream of the filter in the second supply line, and the control circuit controls the heaters provided in each of the plurality of first supply lines so that the temperature detected by the temperature sensor is maintained at or above the critical temperature of the processing fluid.

4. The substrate processing apparatus according to claim 1, comprising a control circuit for controlling the fluid supply unit, wherein the fluid supply unit has a line heater for heating the second supply line, and the control circuit controls the setting temperature of the line heater to a temperature higher than the setting temperature of the heater with the lowest setting temperature among the heaters provided in each of the plurality of first supply lines.

5. A substrate processing apparatus according to claim 1, comprising a control circuit for controlling the fluid supply unit, wherein a plurality of first supply lines include a low-temperature line that supplies the processing fluid heated to a first temperature to a second supply line, and a high-temperature line that supplies the processing fluid heated to a second temperature higher than the first temperature to the second supply line, and the control circuit performs control to supply the processing fluid to the second supply line simultaneously from the low-temperature line and the high-temperature line when transitioning from a first state in which the processing fluid is supplied from the low-temperature line to the second supply line to a second state in which the processing fluid is supplied from the high-temperature line to the second supply line.

6. A substrate processing apparatus according to claim 1, comprising a control circuit for controlling the fluid supply unit, wherein the fluid supply unit has a third supply line that branches off from the second supply line downstream of the filter and is connected to the processing container, the control circuit controls the supply of the processing fluid from the third supply line to the processing container when supplying the processing fluid to the processing container without discharging the processing fluid from the processing container, and controls the supply of the processing fluid from the second supply line to the processing container when simultaneously supplying the processing fluid to the processing container and discharging the processing fluid from the processing container.

7. The substrate processing apparatus according to claim 1, comprising a control circuit for controlling the fluid supply unit, wherein the fluid supply unit has a fourth supply line connected to the second supply line upstream of the filter and supplying an inert gas to the second supply line, and the control circuit controls the supply of the inert gas from the fourth supply line to the second supply line between the processing of one substrate and the processing of the next substrate.

8. A fluid supply system for supplying a supercritical processing fluid into a processing vessel, comprising: a plurality of first supply lines connected in parallel; and a second supply line connecting the plurality of first supply lines to the processing vessel, wherein each of the plurality of first supply lines is provided with a heater and an on / off valve in order from the upstream side of the flow of the processing fluid, and the second supply line is provided with a filter for collecting particles contained in the processing fluid.

9. A substrate processing method comprising drying the substrate by replacing the liquid film with the processing fluid in the processing container using the substrate processing apparatus according to any one of claims 1 to 7.

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