High-pressure substrate processing apparatus

Abstract

A high-pressure substrate processing apparatus is disclosed. The high-pressure substrate processing apparatus may include a reaction chamber, a fluid supply module, and a heat-blocking module. The reaction chamber may comprise: a processing chamber formed to accommodate a reaction gas containing gaseous hydrogen oxide and having a reaction pressure higher than atmospheric pressure; and a loading stage formed to load a substrate to be processed by the reaction gas thereon. The fluid supply module may include a discharge port formed to supply the gaseous hydrogen oxide to the processing chamber. The heat-blocking module may be disposed between the discharge port and the loading table to block heat that is to be transferred to the substrate by the gaseous hydrogen oxide discharged from the discharge port.

Description

High-pressure substrate processing device

[0001] The present invention relates to a high-pressure substrate processing device.

[0002]

[0003] Generally, various processing steps are performed on the semiconductor substrate during the semiconductor device manufacturing process. Examples of such processing steps include oxidation, nitridation, ion implantation, and deposition. There is also a hydrogen or deuterium heat treatment process to improve the interface characteristics of the semiconductor device.

[0004] The above process can be broadly classified into vacuum processes and high-pressure processes depending on the pressure of the gas acting on the substrate. If the former is performed at a pressure lower than atmospheric pressure, the latter is performed at a pressure higher than atmospheric pressure.

[0005] The two processes have different characteristics and properties, so what is not a problem in one process may cause a major problem in the other. For example, when using steam in wet oxidation, unlike the vacuum process, impurities can be a major problem in the high-pressure process. Impurities may also occur as the chamber of the component for steam generation melts.

[0006]

[0007] To prevent melting of the steam generation chamber, steam generation may be carried out at very high temperatures. In addition to steam, the gas supplied to the chamber for substrate processing may be supplied at high temperatures as needed. When high-temperature gas is supplied to the chamber for substrate processing, it can transfer excessive heat to the substrate. Consequently, this can lead to thermal deformation of the substrate.

[0008] In light of these problems, one objective of the present invention is to provide a high-pressure substrate processing apparatus capable of supplying high-temperature gas to a chamber for substrate processing while preventing thermal deformation of the substrate caused by the heat contained in the high-temperature gas.

[0009]

[0010] A high-pressure substrate processing apparatus according to one aspect of the present invention for realizing the above-mentioned problem may include: a reaction chamber formed to accommodate a reaction gas having a reaction pressure higher than atmospheric pressure and including gaseous hydrogen oxide; a reaction chamber formed to load a substrate to be processed by said reaction gas; a fluid supply module having a discharge port formed to supply said gaseous hydrogen oxide to said processing chamber; and a heat blocking module disposed between said discharge port and said loading platform, formed to block heat that said gaseous hydrogen oxide discharged from said discharge port is to transfer to said substrate.

[0011] Here, the reaction chamber includes a housing that accommodates the loading platform and a door formed to open and close the housing and together with the housing to define the processing chamber, and the heat blocking module may be installed on the door.

[0012] Here, the loading platform can be supported by the heat-blocking module.

[0013] Here, the heat blocking module may include a bypass plate formed to divert the flow of the gaseous hydrogen oxide toward the loading platform.

[0014] Here, the bypass plate may be formed from at least one material selected from silica, silicon carbide, and alumina.

[0015] Here, the heat-blocking module may further include a protrusion extending downward from the bypass plate.

[0016] Here, the heat-blocking module may include a cooling plate formed to cool the gaseous hydrogen oxide flowing toward the loading platform.

[0017] Here, the cooling plate is formed to receive a cooling fluid, and the heat blocking module may further include a cooling fluid line formed to supply the cooling fluid to the cooling plate.

[0018] Here, the reaction chamber includes a housing that accommodates the loading platform and a door formed to open and close the housing and together with the housing to define the processing chamber, and the cooling fluid line may extend through the door.

[0019] Herein, a sensing module formed to sense the temperature of the processing chamber is further included; and a control module formed to control the operation of the heat blocking module based on the sense result of the sensing module, wherein the control module may be formed to control the flow rate of the cooling fluid supplied to the cooling plate through the cooling fluid line.

[0020] Here, the sensing module includes a first temperature gauge located at a height corresponding to the loading platform; and a second temperature gauge located at a height corresponding to the cooling plate, and the control module may be formed to control the supply flow rate of the cooling fluid based on the measured values ​​of the first temperature gauge and the second temperature gauge.

[0021] Here, the cooling plate may include a case formed of a metal material; and a coating layer formed on the outer surface of the case.

[0022] Herein, a generating module comprising a generating chamber formed to receive a raw material fluid while communicating with the processing chamber and made of a soluble material, and a heating unit formed to heat the raw material fluid received in the generating chamber to generate the gaseous hydrogen oxide; and a control module formed to control the operation of the heating unit so that a heat amount is provided to the generating chamber to generate the gaseous hydrogen oxide without generating the liquid hydrogen oxide from the raw material fluid may be further included.

[0023] Herein, a protection chamber is further included having a protection chamber formed to accommodate a protection gas having a protection pressure set in relation to the reaction chamber and the reaction pressure, and the fluid supply module is formed to supply the raw material fluid to the generation chamber and the protection gas to the protection chamber, and the control module may be formed to control the operation of the fluid supply module to supply the raw material fluid to the generation chamber at a pressure higher than atmospheric pressure.

[0024] Here, the generating chamber is located in the atmosphere of the protective gas, and the control module may be configured to control the operation of the fluid supply module to adjust the supply amount of the raw material fluid and the protective gas so that the reaction pressure and the protective pressure become the set relationship.

[0025]

[0026] According to the high-pressure substrate processing device of the present invention configured as described above, a heat blocking module is disposed between the discharge port of the fluid supply module and the loading platform in the processing chamber of the internal chamber, and since the transfer of heat contained in the reaction gas discharged from the discharge port to the substrate is blocked by the heat blocking module, it is possible to prevent the substrate from being thermally deformed by the heat contained in the high-temperature reaction gas while supplying the reaction gas to the processing chamber in a high-temperature state.

[0027]

[0028] FIG. 1 is a conceptual diagram of a high-pressure substrate processing device according to one embodiment of the present invention.

[0029] FIG. 2 is a block diagram illustrating the controllable operation of the high-pressure substrate processing device of FIG. 1.

[0030] Figure 3 is a cross-sectional view showing the generation module of Figure 2.

[0031] Figure 4 is a graph showing the amount of silica dissolved according to temperature.

[0032] FIG. 5 is a cross-sectional view showing an embodiment in which the heat-blocking module of FIG. 2 is installed in an internal chamber.

[0033] FIG. 6 is a cross-sectional view showing one modified example of the heat-blocking module in FIG. 5.

[0034] FIG. 7 is a cross-sectional view showing another embodiment in which the heat-blocking module of FIG. 2 is installed in an internal chamber.

[0035] FIG. 8 is a perspective view showing the flow path of the cooling fluid in the heat-blocking module of FIG. 7.

[0036]

[0037] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0038] The present invention is not limited to the embodiments disclosed below, but can be modified and implemented in various different forms. The embodiments provided are merely intended to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention. Accordingly, the present invention should be understood not to be limited to the embodiments disclosed below, but to include all modifications, equivalents, and substitutions that fall within the technical spirit and scope of the present invention, as well as substituting or adding the configuration of any one embodiment with the configuration of another embodiment.

[0039] The attached drawings are intended only to facilitate understanding of the embodiments disclosed in this specification, and the technical concept disclosed in this specification is not limited by the attached drawings; rather, it should be understood that they include all modifications, equivalents, and substitutions that fall within the spirit and technical scope of the invention. In the drawings, components may be depicted as being exaggeratedly large or small in size or thickness for the sake of convenience of understanding, but the scope of protection of the invention should not be interpreted restrictively as a result thereof.

[0040] The terms used in this specification are used merely to describe specific embodiments or examples and are not intended to limit the invention. Furthermore, singular expressions include plural expressions unless the context clearly indicates otherwise. Terms such as "includes" or "consists of" in this specification are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in this specification. That is, terms such as "includes" or "consists of" in this specification should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0041] Terms including ordinal numbers, such as first, second, etc., may be used to describe various components, but said components are not limited by said terms. These terms are used solely for the purpose of distinguishing one component from another.

[0042] When it is stated that one component is "connected / communicated" or "connected" to another component, it should be understood that while it may be directly connected / communicated or connected to that other component, there may also be other components in between. On the other hand, when it is stated that one component is "directly connected / communicated" or "directly connected" to another component, it should be understood that there are no other components in between.

[0043] When it is stated that one component is "above" or "below" another component, it should be understood that it is not only placed directly above the other component, but that another component may also exist in between.

[0044] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application.

[0045] FIG. 1 is a conceptual diagram of a high-pressure substrate processing device according to one embodiment of the present invention.

[0046] Referring to the drawing, the high-pressure substrate processing device (100) may include an inner chamber (110), an outer chamber (120), a fluid supply module (130), and an exhaust module (140).

[0047] The inner chamber or reaction chamber (110) forms a processing area that accommodates a substrate for processing. The inner chamber (110) may be made of a non-metallic material, such as quartz, to reduce contamination in a high-temperature and high-pressure working environment. Although simplified in the drawing, a door (not shown) for opening and closing the processing area is provided at the bottom of the inner chamber (110). As the door is lowered, the processing area is opened, and the substrate can be introduced into the processing area. The substrate may be, for example, a wafer for semiconductor manufacturing. The wafer may be made of a material such as Si, SiC, GaN, etc. The substrate is not limited to the wafer, and other materials are possible as long as they are base structures for making circuits. For example, the substrate may also include glass for display manufacturing. The holder may be a loading stand having multiple layers of shelves for loading the substrate. The above loading platform may be made of a material that is insoluble in gaseous hydrogen oxide, for example, silicon carbide (SiC). Depending on the operation of a heater (not shown) placed on the outside of the inner chamber (110), the temperature of the inner chamber (110) may reach hundreds to thousands of degrees.

[0048] The outer chamber or protective chamber (120) forms a protecting area that accommodates the inner chamber (110). Unlike the inner chamber (110), the outer chamber (120) is free from concerns regarding contamination of the substrate, so it can be made of metal. The outer chamber (120) is also equipped with a door (not shown) at the bottom, and the door (outer door) can descend together with the door (inner door) of the inner chamber (110) to open the protective area. The inner chamber (110) can be mounted in the outer chamber (120).

[0049] The fluid supply module (130) is configured to supply fluid to the inner chamber (110) and the outer chamber (120). The fluid supply module (130) may have a fluid supply unit (131) connected to the utility (fluid supply facility) of the substrate processing plant. The fluid supply unit (131) may selectively provide, for example, hydrogen gas (H2), deuterium gas (D2), gaseous hydrogen oxide, fluorine gas (F2), ammonia gas (NH3), chlorine gas (Cl2), nitrogen gas (N2), etc. as a reaction gas to the processing chamber. The gaseous hydrogen oxide may be produced by a generation module (160, see FIG. 2) to be described later and supplied to the processing chamber. In that case, the fluid supply module (130) may supply a raw material fluid for producing the gaseous hydrogen oxide to the generation module (160). The above gaseous hydrogen oxide can be used for wet oxidation, atomic layer deposition (ALD), chemical vapor deposition (CVD), heat treatment (annealing), etc. The fluid supply unit (131) can provide, for example, inert gas such as nitrogen gas or argon gas (Ar) as a protective gas to the protective chamber. The reaction gas and the protective gas can simply be referred to as process gas. The process gas is supplied to the processing chamber or the protective chamber through the reaction gas line (133) or the protective gas line (135). Specifically, the protective gas supplied to the protective chamber can be supplied to the remaining space (protected space) of the outer chamber (120), excluding the space occupied by the inner chamber (110).

[0050] The process gas may reach a pressure higher than atmospheric pressure (high pressure) within the chambers (110, 120), for example, several atmospheres, tens of atmospheres, or even higher. The reaction pressure, which is the pressure of the reaction gas within the inner chamber (110), and the protection pressure, which is the pressure of the protection gas within the outer chamber (120), may be maintained in a set relationship. For example, the protection pressure may be set to be generally equal to or slightly higher than the reaction pressure. This pressure relationship provides the advantage of preventing the reaction gas from leaking from the inner chamber (110) and preventing the inner chamber (110) from breaking. The protection pressure may also be set to be slightly lower than the reaction pressure, in which case a similar effect to the above can be achieved.

[0051] The exhaust module (140) is configured to exhaust the process gas. To exhaust the reaction gas from the inner chamber (110), an exhaust pipe (141) is connected to the upper part of the inner chamber (110). Similarly, to exhaust the protection gas from the outer chamber (120), an exhaust pipe (145) connected to the outer chamber (120) may be provided. If these exhaust pipes (141 and 145) are integrated into one, the reaction gas is diluted by the protection gas during the exhaust process, and its concentration is lowered.

[0052] The control configuration of the high-pressure substrate processing device (100) is explained with reference to FIG. 2. FIG. 2 is a block diagram for explaining the control operation of the high-pressure substrate processing device of FIG. 1.

[0053] Referring to the drawing (and FIG. 1), the high-pressure substrate processing device (100) may further include a heating module (150), a generating module (160), a sensing module (170), a control module (180), and a storage module (185) in addition to the fluid supply module (130) and exhaust module (140) described above.

[0054] The heating module (150) is configured to include the aforementioned heater. The heater may be positioned to face the inner chamber (110) within the outer chamber (120). The heater may be positioned on the outer side of the inner chamber (110) in this drawing.

[0055] The generation module (160) is configured to generate hydrogen oxide. The hydrogen oxide is a molecule formed by the combination of oxygen and hydrogen, and may include at least one of H2O, H2O2, and H2O3. The hydrogen oxide may basically be the previously mentioned gaseous hydrogen oxide. The generation module (160) may operate in conjunction with the fluid supply module (130). Specifically, the generation module (160) may be installed in the reaction gas line (133) or installed to be in communication with the reaction gas line (133). The generation module (160) may also be in communication with the processing room. Thereby, the gaseous hydrogen oxide is supplied to the processing room and may form part of the reaction gas. In an alternative embodiment, the reaction gas line (133) may include a line in which the generation module (160) is installed and a line in which the generation module (160) is not installed. The latter can be used to supply a gas other than the above-mentioned gaseous hydrogen oxide to the treatment room.

[0056] The detection module (170) is configured to detect the environment of the chamber (110, 120) and further the generation module (160). The detection module (170) may be equipped with a pressure gauge (171) and a temperature gauge (175). The pressure gauge (171) and the temperature gauge (175) may be installed in the chamber (110, 120), further the generation module (160), or in a part connected to the generation module (160) {e.g., a reaction gas line (133)}. The detection module (170) may also have a gas detector (not shown) for detecting the presence of a specific gas.

[0057] The control module (180) is configured to control the fluid supply module (130) and the exhaust module (140), etc. The control module (180) can control the operation of the fluid supply module (130), etc. based on the detection result of the detection module (170). The storage module (185) is configured to store data, programs, etc. that the control module (180) can refer to for control.

[0058] According to this configuration, the control module (180) can control the fluid supply module (130) and the generation module (160) based on the pressure of the chamber (110, 120) and the generation module (160) obtained through the pressure gauge (171). Depending on the operation of the fluid supply module (130) and the generation module (160), the reaction gas can cause the processing chamber to have the reaction pressure. The protection space can be filled with the protection gas at the protection pressure.

[0059] The control module (180) can also control the operation of the exhaust module (140) based on the pressure of the chamber (110, 120) and the generation module (160) obtained through the pressure gauge (171). Depending on the operation of the exhaust module (140), the reaction gas can be exhausted from the processing chamber. The protection gas can be exhausted from the protection space.

[0060] The control module (180) can control the operation of the heating module (150) based on the temperature of the chamber (110, 120) obtained through the temperature gauge (175). Depending on the operation of the heating module (150), the reaction gas can reach a processing temperature for processing the substrate.

[0061] The control module (180) can also control the operation of the generation module (160) and the fluid supply module (130) so that the generation module (160) generates the gaseous hydrogen oxide at a set temperature and pressure. This will be explained with reference to FIGS. 3 and 4.

[0062] Figure 3 is a cross-sectional view showing the generation module of Figure 2, and Figure 4 is a graph showing the amount of silica dissolved according to temperature.

[0063] Referring to FIG. 3, the generation module (160) may include a generation chamber (161) and a heating unit (163).

[0064] The generation chamber (161) may be located in the atmosphere of the protective gas. Specifically, the generation chamber (161) may be located in the protective chamber.

[0065] The generating chamber (161) may have a generating chamber (162) which is an internal space. A hydrogen line (133a) and an oxygen line (133b) may be connected to the generating chamber (162). The hydrogen line (133a) and the oxygen line (133b) are connected to a fluid supply unit (131, see FIG. 1), and the generating chamber (162) may receive the raw material fluid (the hydrogen gas and the oxygen gas) through the corresponding lines (133a and 133b). The generating chamber (162) may also be connected to the processing chamber through an input line (133c). By connecting the generating chamber (162) to the processing chamber, the gaseous hydrogen oxide produced in the generating chamber (162) may be supplied to the processing chamber. Additionally, the pressure in the generating chamber (162) (primarily due to the hydrogen oxide) may be generally the same as the reaction pressure. The hydrogen gas and the oxygen gas can react in the generation chamber (162) to produce the hydrogen oxide. The generation chamber (161) may be made of a material composed of silica (SiO2) that is resistant to contamination, for example, quartz. However, the silica is a material that is soluble under certain conditions.

[0066] The heating unit (163) is configured to generate heat so that the temperature of the generation chamber (162) reaches the set temperature. The heating unit (163) may be positioned to surround the generation chamber (161) from the outside. The heat generated by the heating unit (163) can pass through the generation chamber (161) made of quartz material to heat the hydrogen gas and the oxygen gas. The hydrogen gas and the oxygen gas can generate the hydrogen oxide in the heated atmosphere.

[0067] Liquid hydrogen oxide in a liquid state can dissolve the generation chamber (162) {made of the quartz} and generate foreign substances. In response to this, the control module (180) can control the operation of the heating unit (163, see FIG. 2 above) so that the liquid hydrogen oxide is not generated in the generation chamber (162). Specifically, the heating unit (163) can be operated to provide a heat amount to the generation chamber (162) such that the gaseous hydrogen oxide is generated without the generation of the liquid hydrogen oxide. The heat amount can be determined by considering the temperature, pressure, and flow rate of the raw material fluid.

[0068] To generate the above gaseous hydrogen oxide, the heating unit (163) can be operated so that the set temperature reaches, for example, several hundred ℃. Referring to FIG. 4, the inventor confirmed that as the temperature increases, the amount of dissolved silica increases rapidly, but as it approaches the critical temperature (about 374 ℃), it decreases rapidly so that no further dissolution occurs. To prevent the dissolution of the silica, the heating unit (163) can be operated so that the temperature of the generation chamber (162) is maintained higher than the critical temperature.

[0069] Referring further to FIGS. 1 and 2, the control module (180) can also control the fluid supply module (130) to regulate the supply amount of the raw fluid and the protective gas. Since the pressure in the generation chamber (162) is generally equal to the reaction pressure, the generation chamber (162) may be exposed internally to the reaction pressure and externally to the protective pressure. The regulation of the supply amount of the raw fluid may result in the regulation of the reaction pressure. The regulation of the supply amount of the raw fluid and the protective gas consequently leads to the regulation of the pressure difference between the inside and outside of the generation chamber (161). By maintaining the pressure difference between the inside and outside in the established relationship, the generation chamber (161) may not be damaged even by the high pressure generated during the generation of the gaseous hydrogen oxide.

[0070] In an alternative embodiment, the generation module (160) may be located outside the outer chamber (120). In that case, the generation chamber (161) is housed in another chamber (casing chamber), and the casing chamber may be in communication with the protection space. Accordingly, the generation chamber (162) may still be internally exposed to the reaction pressure and externally exposed to the protection pressure.

[0071] In an alternative embodiment, the generation module (160) may be located within the processing chamber. In that case, the gaseous hydrogen oxide generated in the generation module (160) may act on the substrate with minimal loss of thermal energy. The generation module (160) may be located, for example, between the upper surface of the inner door (115) described later and the heat-blocking module (190) (see FIG. 5 above). In this case, since a heating module (150, see FIG. 2) may act on the generation chamber (161) of the generation module (160), the heating module (150) may be the heating unit (163) of the preceding embodiment.

[0072] In the process of generating the above gaseous hydrogen oxide and supplying it to the processing chamber, the heat applied to the above gaseous hydrogen oxide may have a thermal effect on the wafer in the processing chamber. To prevent excessive thermal effect, the high-pressure substrate processing device (100) may be equipped with a heat blocking module. The heat blocking module will be explained with reference to FIGS. 5 to 8.

[0073] FIG. 5 is a cross-sectional view showing an embodiment in which the heat-blocking module of FIG. 2 is installed in an internal chamber.

[0074] Referring to the drawings, the inner chamber (110) may specifically comprise an inner housing (111), an inner door (115), and a loading platform (119). When the inner door or reaction door (115) closes the inner housing or reaction housing (111), the inner housing (111) and the inner door (115) may define the processing chamber. When the inner door (115) opens the inner housing (111), a wafer (W) may be loaded onto or unloaded from the loading platform (119). The loading platform (119) may be a wafer boat formed to load one or more wafers (W). The inner housing (111) and the inner door (115) may be briefly referred to as housing or door only in the claims.

[0075] The fluid supply module (130) may further include an extension tube (136), a discharge port (137), and a heating unit (139) in addition to a fluid supply device (131, see FIG. 1). The extension tube (136) is installed in the inner door (115) and may extend along a spiral path. The extension tube (136) may be connected to a reaction gas line (133, see FIG. 1). The discharge port (137) may be located in the processing room as a free end region of the extension tube (136). The discharge port (137) may discharge the reaction gas, e.g., the gaseous hydrogen oxide, toward the upper surface of the inner door (115). The heating unit (139) may heat the gaseous hydrogen oxide flowing along the extension tube (136). The gaseous hydrogen oxide may be heated for a longer period by the heating unit (139) while flowing along the spiral path.

[0076] The heat blocking module (190) may be configured to block at least partially the heat that the gaseous hydrogen oxide intends to transfer to the wafer (W). The heat may be contained in the gaseous hydrogen oxide that is discharged from the discharge port (137) and flows toward the wafer (W). To this end, the heat blocking module (190) may be placed between the discharge port (137) and the loading platform (119). The heat blocking module (190) may be, for example, a deflecting plate (191) that diverts the flow of the gaseous hydrogen oxide toward the loading platform (119). Even if the gaseous hydrogen oxide exiting the discharge port (137) is diverted by the upper surface of the inner door (115), it may not proceed directly toward the loading platform (119), mainly toward the lower or bottom surface of the loading platform (119). The above gaseous hydrogen oxide can rise toward the loading platform (119) or wafer (W) only after being diverted again by the bypass plate (191). By doing so, as the above gaseous hydrogen oxide acts on the loading platform (119) while having high heat, the wafer (W) loaded mainly at the bottom of the loading platform (119) can be prevented from being excessively affected by heat.

[0077] The bypass plate (191) is installed on the inner door (115) and can be arranged to be generally parallel to the wafer (W). The bypass plate (191) has a disc shape similar to the wafer (W), and in that case, may have a larger diameter than the wafer (W). The bypass plate (191) may be generally solid. When the bypass plate (191) is placed on the inner door (115), the loading platform (119) may be supported on the bypass plate (191).

[0078] The bypass plate (191) can be formed from a material with low thermal conductivity. The bypass plate (191) can be formed from, for example, silica (SiO2), silicon carbide (SiC), or alumina (Al2O3).

[0079] FIG. 6 is a cross-sectional view showing one modified example of the heat-blocking module in FIG. 5.

[0080] Referring to the drawing, the heat blocking module (190A) of the high-pressure substrate processing device (100A) may have a bypass plate (191) and a protrusion (195) extending from the bypass plate (191).

[0081] The bypass plate (191) may have a disc shape. The bypass plate (191) may be positioned above the discharge port (137). The bypass plate (191) may have a diameter larger than that of the wafer (W). The bypass plate (191) may be arranged parallel to the wafer (W).

[0082] The protrusion (195) may be a portion extending downward from the bypass plate (191). The protrusion (195) may have a ring shape extending along the edge of the bypass plate (191). The protrusion (195) is exemplified as extending vertically from the bypass plate (191), but is not limited thereto. The protrusion (195) may be arranged to form an obtuse angle with respect to the bypass plate (191). Additionally, the protrusion (195) may not be continuous like a ring and may be formed in a partially broken shape.

[0083] According to this configuration, the gaseous hydrogen oxide discharged from the discharge port (137) is not only bypassed by the bypass plate (191), but can also be bypassed once more by the protrusion (195). As a result, the gaseous hydrogen oxide approaches the wafer (W) through a longer path. This longer path allows the thermal effect of the heat contained in the gaseous hydrogen oxide on the wafer (W) to be reduced.

[0084] Another type of thermal insulation module is described with reference to FIGS. 7 and FIG. 8. FIG. 7 is a cross-sectional view showing another embodiment in which the thermal insulation module of FIG. 2 is installed in an internal chamber, and FIG. 8 is a perspective view showing the flow path of a cooling fluid in the thermal insulation module of FIG. 7.

[0085] Referring to the drawings, the high-pressure substrate processing device (200) has an internal chamber (210) that is generally the same as the high-pressure substrate processing device (100) of the preceding embodiment. The internal chamber (210) may also have an internal housing (211) and an internal door (215).

[0086] Unlike the previous embodiment, the heat blocking module (290) may have a cooling plate (291). The cooling plate (291) may be configured to cool the gaseous hydrogen oxide discharged from the discharge port (237). As a result, the thermal effect of the gaseous hydrogen oxide on the loading platform (219) and further on the wafer (W) can be reduced. The cooling plate (291) may also serve as a deflecting function, such as the bypass plate (191, see FIG. 5) of the previous embodiment. Furthermore, a through hole (not shown) may be formed in the cooling plate (291). The gaseous hydrogen oxide may flow through the through hole and be cooled by the cooling plate (291). The gaseous hydrogen oxide passing through the through hole can prevent the space directly beneath the loading platform (219) from having a lower temperature than other spaces. If necessary, the bypass plate (191, see FIG. 5 and FIG. 6) according to the preceding embodiment may also have the through hole in at least one area.

[0087] The cooling plate (291) may have an internal space (291') for receiving a cooling fluid. The cooling fluid may be, for example, process cooling water. The cooling plate (291) may have a case made of a material with high thermal conductivity, for example, a metal material, to facilitate heat transfer between the cooling fluid and the gaseous hydrogen oxide. Since the case may oxidize upon contact with the gaseous hydrogen oxide, a coating layer may be formed on the surface of the case to prevent oxidation. The coating layer may be, for example, a plating layer.

[0088] The internal space (291') may be extended in a spiral shape, for example, to maximize the flow path of the cooling fluid. A cooling fluid line (295) may be connected to the internal space (291'). The cooling fluid line (295) is connected to a fluid supply unit (131, see FIG. 1) and may have a supply line (295a) and a return line (295b). If the supply line (295a) supplies the cooling fluid received from the fluid supply unit (131) to the internal space (291'), the return line (295b) may return the cooling fluid that has passed through the internal space (291') to the fluid supply unit (131). The supply line (295a) and / or the return line (295b) may be positioned through the internal door (215). The gap between them (295a and 295b) and the inner door (215) can be sealed by means such as welding.

[0089] The flow rate of the cooling fluid supplied to the cooling plate (291) through the supply line (295a) can be controlled by a control module (180, see FIG. 2). For example, if the temperature of the gaseous hydrogen oxide discharged from the discharge port (237) becomes higher than the set temperature, the control module (180) can increase the supply flow rate of the cooling fluid to the cooling plate (291). To this end, the control module (180) can control a control valve (not shown) installed in the cooling fluid line (295). As a result, the gaseous hydrogen oxide may not transfer excessive heat to the wafer (W). The set temperature may be the same as or related to the processing temperature. Alternatively, the control valve may be installed in the fluid supply unit (131). Conversely, if the temperature of the gaseous hydrogen oxide is lower than the set temperature, the control module (180) can decrease the supply flow rate. As a result, the cooling fluid can be prevented from having an unnecessary effect on the temperature (processing temperature) for processing the wafer (W).

[0090] The temperature of the processing chamber can be measured by a temperature gauge (175, see FIG. 2). The temperature gauge (175) may be positioned close to the outer surface of the inner housing (211). The temperature gauge (175) may have a first temperature gauge (175a) and a second temperature gauge (175b). If the first temperature gauge (175a) is positioned corresponding to the height of the loading platform (219), for example, the center of the loading platform (219), the second temperature gauge (175b) may be positioned at a height corresponding to the cooling plate (291). The first temperature gauge (175a) can measure the overall temperature of the processing chamber mainly due to the operation of the heating module (150, see FIG. 2). The second temperature gauge (175b) can measure the temperature of the area where the gaseous hydrogen oxide is discharged mainly. The control module (180) can determine the temperature level of the gaseous hydrogen oxide by comparing the temperatures measured at the first temperature gauge (175a) and the second temperature gauge (175b).

[0091] In this specification, a processing device having a double chamber has been described as an example of a high-pressure substrate processing device (100), but the invention is not limited thereto. The configuration of the generation module (160), the associated fluid supply module (130) and control module (180), and the heat blocking module (190, 190A, 290) may also be applied to a processing device having a single chamber. The single chamber consists of a housing and a door. A substrate is placed inside the chamber, and a reaction gas for processing the substrate is supplied. The housing and the door may correspond to the inner housing (111, 211) and inner door (115, 215) in the aforementioned double chamber.

[0092] The configuration of the high-pressure substrate processing device (100) may also be applied to a semi-double chamber, which is an intermediate form between the double chamber and the single chamber. The semi-double chamber may have two housings {inner housing and outer housing} and one door. The two housings may be combined by their own shapes or with the intervention of separate members to form a closed space (corresponding to the protective space). As in the previous embodiment, the substrate is placed in the processing chamber of the inner housing and the reaction gas is injected, and the protective gas may be injected into the closed space. Unlike the previous embodiment, the door is not fully protected by the protective gas and is exposed to the outside. The door may correspond to the outer door in the previous embodiment. The door may open and close the inner housing.

[0093] This specification exemplifies a batch-type processing apparatus, but the invention is not limited thereto. The invention may be applied as is to a single-wafer-type processing apparatus.

[0094]

[0095] The present invention has industrial applicability in the field of manufacturing high-pressure substrate processing devices.

Claims

1. A reaction chamber having a processing chamber formed to accommodate a reaction gas having a reaction pressure higher than atmospheric pressure and containing gaseous hydrogen oxide, and a loading platform formed to load a substrate to be processed by said reaction gas; A fluid supply module having a discharge port formed to supply the gaseous hydrogen oxide to the processing chamber; and A high-pressure substrate processing device comprising a heat-blocking module disposed between the discharge port and the loading platform, formed to block heat that the gaseous hydrogen oxide discharged from the discharge port intends to transfer to the substrate.

2. In Paragraph 1, The above reaction chamber is, It includes a housing that accommodates the above-mentioned loading platform, and a door formed to open and close the housing and together with the housing to define the processing chamber, The above heat-blocking module is, A high-pressure substrate processing device installed on the above door.

3. In Paragraph 2, The above loading platform is, A high-pressure substrate processing device supported by the above-mentioned heat-blocking module.

4. In Paragraph 1, The above heat-blocking module is, A high-pressure substrate processing device comprising a bypass plate formed to bypass the flow of the gaseous hydrogen oxide toward the loading platform.

5. In Paragraph 4, The above bypass plate is, A high-pressure substrate processing device formed from at least one material selected from silica, silicon carbide, and alumina.

6. In Paragraph 4, The above heat-blocking module is, A high-pressure substrate processing device further comprising a protrusion extending downward from the above bypass plate.

7. In Paragraph 1, The above heat-blocking module is, A high-pressure substrate processing apparatus comprising a cooling plate formed to cool the gaseous hydrogen oxide flowing toward the loading platform.

8. In Paragraph 7, The above cooling plate is, It is formed to accommodate a cooling fluid, and The above heat-blocking module is, A high-pressure substrate processing apparatus further comprising a cooling fluid line formed to supply the cooling fluid to the cooling plate.

9. In Paragraph 8, The above reaction chamber is, It includes a housing that accommodates the above-mentioned loading platform, and a door formed to open and close the housing and together with the housing to define the processing chamber, The above cooling fluid line is, A high-pressure substrate processing device extending through the above door.

10. In Paragraph 8, A sensing module formed to detect the temperature of the processing room; and It further includes a control module formed to control the operation of the heat blocking module based on the detection result of the above detection module, and The above control module is, A high-pressure substrate processing device formed to control the flow rate of the cooling fluid supplied to the cooling plate through the cooling fluid line.

11. In Paragraph 10, The above detection module is, A first temperature gauge located at a height corresponding to the above-mentioned loading platform; and It includes a second temperature gauge located at a height corresponding to the above cooling plate, and The above control module is, A high-pressure substrate processing device formed to control the supply flow rate of the cooling fluid based on the measured values ​​of the first temperature gauge and the second temperature gauge.

12. In Paragraph 7, The above cooling plate is, A case formed of a metal material; and A high-pressure substrate processing device comprising a coating layer formed on the outer surface of the above case.

13. In Paragraph 1, A generating module comprising a generating chamber formed to receive a raw material fluid while communicating with the processing chamber and a generating chamber made of a soluble material, and a heating unit formed to heat the raw material fluid received in the generating chamber to generate the gaseous hydrogen oxide; and A high-pressure substrate processing apparatus further comprising a control module formed to control the operation of the heating unit so that a heat amount is provided to the generation chamber to generate the gaseous hydrogen oxide without generating the liquid hydrogen oxide from the raw material fluid.

14. In Paragraph 13, The apparatus further comprises a protection chamber having a protection chamber formed to accommodate a protection gas having a protection pressure set in relation to the reaction chamber and the reaction pressure, and The above fluid supply module is, It is formed to supply the raw material fluid to the above-mentioned generation chamber and the protective gas to the above-mentioned protection chamber, and The above control module is, A high-pressure substrate processing device configured to control the operation of the above fluid supply module to supply the above raw material fluid to the generation chamber at a pressure higher than atmospheric pressure.

15. In Paragraph 14, The above-mentioned generation chamber is, Located in the atmosphere of the above-mentioned protective gas, The above control module is, A high-pressure substrate processing device formed to control the operation of the above fluid supply module and to adjust the supply amounts of the raw material fluid and the protective gas so that the reaction pressure and the protective pressure become the set relationship.

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