Diode light-emitting device, laser light-emitting device and resonant cavity light-emitting device

Abstract

A diode light-emitting device, a laser light-emitting device and a resonant cavity light-emitting device. The diode light-emitting device comprises: a reflector (100) and a light-emitting composite layer, the light-emitting composite layer being located in a resonant cavity formed by the reflector (100). The light-emitting composite layer comprises: an N-type electrode (200), a P-type electrode (300), a first light-emitting layer (400) and a second light-emitting layer (500), the first light-emitting layer (400) forming a pumping area and a functional area, and the second light-emitting layer (500) forming a functional area. The first light-emitting layer (400) is stacked on the side of the second light-emitting layer (500) close to the P-type electrode (300), and at least one wavelength of light emitted by the first light-emitting layer (400) is less than or equal to the wavelength of light emitted by the second light-emitting layer (500), so as to excite the second light-emitting layer (500) to emit light. The number of wavelengths of light emitted by the diode light-emitting device is greater than or equal to 1.

Description

Diode light-emitting devices, laser light-emitting devices, and resonant cavity light-emitting devices

[0001] This application claims priority to Chinese Patent Application No. 202411643507.9, filed with the Chinese Patent Office on November 15, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of semiconductor technology, such as to a diode light-emitting device, a laser light-emitting device, and a resonant cavity light-emitting device. Background Technology

[0003] Diode light-emitting devices are common light-emitting devices and are widely used in many fields such as communications, displays, lighting, and medical applications.

[0004] In related technologies, laser diodes (LDs), as light-emitting devices that convert electrical energy into laser output, typically have only a single emitting layer and a single emitting unit, with the pump source and gain medium located in the same region. When fabricating multi-wavelength laser diodes, multiple laser diodes are usually used in combination, or color conversion materials are employed to form multi-wavelength laser diodes. Resonant cavity light-emitting diodes (RCLEDs), as a combination of vertical cavity surface-emitting lasers (VCSELs) and traditional light-emitting diodes (LEDs), possess the advantages of both. Compared to traditional LEDs, RCLEDs emit light with greater intensity, extraction efficiency, and modulation bandwidth, as well as better directionality, spectral purity, and temperature reliability. Resonant cavity light-emitting diodes in related technologies have only one emitting layer.

[0005] Both the aforementioned laser diodes and resonant cavity light-emitting diodes suffer from low luminous efficiency. Furthermore, the fabricated multi-wavelength laser diodes and resonant cavity light-emitting diodes are characterized by low luminous efficiency, complex manufacturing processes, intricate structures, large size, poor reliability, and high cost. Summary of the Invention

[0006] This application provides a diode light-emitting device, a laser light-emitting device, and a resonant cavity light-emitting device, which can improve the luminous efficiency of the diode light-emitting device, reduce its structural complexity and manufacturing difficulty, and have a smaller size, higher reliability, and lower cost.

[0007] In a first aspect, this application provides a diode light-emitting device, comprising:

[0008] The reflectors form a resonant cavity;

[0009] A light-emitting composite layer, wherein the light-emitting composite layer is located in the resonant cavity; the light-emitting composite layer comprises:

[0010] N-type electrode;

[0011] P-type electrode;

[0012] The first light-emitting layer is configured to emit light with at least one wavelength, forming a pump region and a functional region;

[0013] The second light-emitting layer is configured to emit light with at least one wavelength, forming a functional area;

[0014] The first light-emitting layer is stacked on the side of the second light-emitting layer near the P-type electrode, and at least one wavelength of light emitted by the first light-emitting layer is less than or equal to the wavelength of light emitted by the second light-emitting layer, so as to excite the second light-emitting layer to emit light;

[0015] The number of wavelengths of light emitted by the diode light-emitting device is greater than or equal to 1.

[0016] Secondly, this application provides a laser light-emitting device, including the aforementioned diode light-emitting device.

[0017] Thirdly, this application provides a resonant cavity light-emitting device, including the aforementioned diode light-emitting device. Attached Figure Description

[0018] Figure 1 is a schematic diagram of a surface-emitting laser diode;

[0019] Figure 2 is a schematic diagram of the structure of a side-emitting laser diode;

[0020] Figure 3 is a schematic diagram of the light emission mechanism of a laser diode;

[0021] Figure 4 is a schematic diagram of the resonant cavity light-emitting diode;

[0022] Figure 5 is a schematic diagram of the structure of the first type of surface-emitting diode light-emitting device provided in the embodiment of this application;

[0023] Figure 6 is a schematic diagram of the structure of the first type of edge-emitting diode light-emitting device provided in the embodiment of this application;

[0024] Figure 7 is a schematic diagram of the structure of a second type of surface-emitting diode light-emitting device provided in an embodiment of this application;

[0025] Figure 8 is a schematic diagram of the structure of the third type of surface-emitting diode light-emitting device provided in the embodiments of this application;

[0026] Figure 9 is a schematic diagram of the structure of the fourth type of surface-emitting diode light-emitting device provided in the embodiments of this application;

[0027] Figure 10 is a schematic diagram of the structure of the fourth type of edge-emitting diode light-emitting device provided in the embodiments of this application;

[0028] Figure 11 is a schematic diagram of the structure of the fifth type of surface-emitting diode light-emitting device provided in the embodiments of this application;

[0029] Figure 12 is a schematic diagram of the structure of the fifth type of edge-emitting diode light-emitting device provided in the embodiments of this application;

[0030] Figure 13 is a schematic diagram of the structure of the sixth type of surface-emitting diode light-emitting device provided in the embodiments of this application;

[0031] Figure 14 is a schematic diagram of the sixth type of edge-emitting diode light-emitting device provided in the embodiments of this application;

[0032] Figure 15 is a schematic diagram of the structure of the seventh type of surface-emitting diode light-emitting device provided in the embodiments of this application;

[0033] Figure 16 is a schematic diagram of the structure of the seventh type of edge-emitting diode light-emitting device provided in the embodiments of this application;

[0034] Figure 17 is a schematic diagram of the structure of the eighth type of surface-emitting diode light-emitting device provided in the embodiments of this application;

[0035] Figure 18 is a schematic diagram of the structure of the ninth type of surface-emitting diode light-emitting device provided in the embodiments of this application;

[0036] Figure 19 is a schematic diagram of the structure of the tenth surface-emitting diode light-emitting device provided in the embodiment of this application;

[0037] Figure 20 is a schematic diagram of the structure of the eleventh surface-emitting diode light-emitting device provided in the embodiment of this application;

[0038] Figure 21 is a schematic diagram of the structure of the twelfth type of surface-emitting diode light-emitting device provided in the embodiments of this application;

[0039] Figure 22 is a schematic diagram of the thirteenth surface-emitting diode light-emitting device provided in the embodiment of this application;

[0040] Figure 23 is a schematic diagram of the structure of the fourteenth side-emitting diode light-emitting device provided in the embodiment of this application;

[0041] Figure 24 is a schematic diagram of the structure of the fifteenth type of side-emitting diode light-emitting device provided in the embodiments of this application;

[0042] Figure 25 is a schematic diagram of the structure of the sixteenth type of surface-emitting diode light-emitting device provided in the embodiments of this application;

[0043] Figure 26 is a schematic diagram of the structure of the seventeenth type of surface-emitting diode light-emitting device provided in the embodiments of this application;

[0044] Figure 27 is a schematic diagram of the structure of the seventeenth type of edge-emitting diode light-emitting device provided in the embodiments of this application;

[0045] Figure 28 is a schematic diagram of the light-emitting mechanism of the diode light-emitting device provided in the embodiment of this application;

[0046] Figure 29 is a schematic diagram of a stacked barrier layer and a potential well layer provided in an embodiment of this application;

[0047] Figure 30 is a schematic diagram of another stacked barrier layer and potential well layer provided in an embodiment of this application.

[0048] Explanation of reference numerals in the attached figures:

[0049] 100, Reflector; 101, First Reflector; 102, Second Reflector; 103, Third Reflector; 200, N-type Electrode; 201, N-type Semiconductor Layer; 202, N-type Waveguide Layer; 300, P-type Electrode; 301, P-type Semiconductor Layer; 302, P-type Waveguide Layer; 400, First Light-Emitting Layer; 500, Second Light-Emitting Layer; 600, Hole Isolation Layer; 700, Light-Emitting Unit; 800, Isolation Structure; 900, Substrate; 901, Insulating Layer; 902, Electron Confinement Layer; 903, Contact Layer; 904, Oxide Layer; 10, Light-Emitting Layer; 11, Barrier Layer; 12, Potential Well Layer. Detailed Implementation

[0050] Referring to Figures 1 and 2, a conventional laser diode includes a reflector 100, which comprises a first reflector 101 and a second reflector 102, forming a resonant cavity between the first reflector 101 and the second reflector 102. The laser diode also includes an N-type electrode (not shown), an N-type semiconductor layer 201, a light-emitting layer 10, a P-type semiconductor layer 301, and a P-type electrode (not shown) disposed within the resonant cavity. When the N-type electrode is energized, current is injected into the N-type semiconductor layer 201 to generate electrons. When the P-type electrode is energized, current is injected into the P-type semiconductor layer 301 to generate holes. Electrons and holes recombine in the light-emitting layer 10, generating emitted photons. Figure 1 shows the structure of a surface-emitting laser diode, and Figure 2 shows the structure of an edge-emitting laser diode. The arrows in Figures 1 and 2 indicate their corresponding light emission directions.

[0051] The following explains the light-emitting principle of a traditional laser diode. Referring to Figure 3, Figure 3(a) shows the generation of photons in the light-emitting layer 10 when a voltage is applied to the N-type and P-type electrodes. Figure 3(b) shows the photons emitted from the light-emitting layer 10, completing the electroluminescence mechanism. Figure 3(c) shows the photons returning to the light-emitting layer 10 after being reflected by the mirror 100 forming the resonant cavity. Figure 3(d) shows some photons in the light-emitting layer 10 exciting more photons, completing the photoluminescence mechanism. A large number of photons are ultimately amplified and mode-selected after multiple reflections through the resonant cavity before being emitted to form a laser beam.

[0052] Referring to Figure 3, the laser diodes in Figures 1 and 2 have only a single emitting region, namely the emitting layer 10. This emitting layer 10 needs to simultaneously function as both a pump region and a gain region, and needs to simultaneously achieve both efficient photoluminescence and electroluminescence mechanisms. Furthermore, the single emitting layer 10 is subjected to iso-energy photon excitation, resulting in a high emission threshold current and low luminous efficiency, such as the luminous efficiency and emission power for green and red light.

[0053] When fabricating multi-wavelength laser diodes, multiple laser diodes are required, and the light emitted by these diodes is combined using an optical prism. For example, in laser TVs, red, green, and blue laser diodes are used to form a pixel unit. This results in a complex structure, difficult assembly, large size, and high cost for the multi-wavelength laser diode. Multi-wavelength laser diodes can also be fabricated using the aforementioned laser diodes in conjunction with color conversion materials. For example, again in laser TVs, three blue laser diodes and color conversion materials are used to form a pixel unit. However, the color conversion material has poor reliability, short lifespan, and low stability, thus leading to a correspondingly lower reliability of the fabricated multi-wavelength laser diode.

[0054] Furthermore, if the light-emitting layer 10 of this laser diode is too thick, the reflected light in the resonant cavity cannot be effectively absorbed by the light-emitting layer 10, affecting the light output performance of the light-emitting layer 10 as a gain region. Therefore, the thickness of the light-emitting layer 10 in traditional laser diodes is limited and cannot be made too thick. Generally, the barrier layer thickness of the light-emitting layer 10 is 2-30 nm, and the potential well layer thickness is 1-10 nm.

[0055] Referring to Figure 4, a conventional resonant cavity light-emitting diode (LED) combines the structures of a vertical-cavity laser and a conventional LED. This LED includes a substrate 900, and sequentially stacked on the substrate 900 are a first reflector 101, an N-type semiconductor layer 201, an electron confinement layer 902, a light-emitting layer 10, a P-type semiconductor layer 301, a P-type electrode 300, and a second reflector 102. An insulating layer 901 is disposed on the P-type semiconductor layer 301. The N-type electrode 200 passes through the insulating layer 901 and is connected to the N-type semiconductor layer 201. The P-type electrode 300 is connected to a contact layer 903, which in turn passes through the insulating layer 901 and is connected to the P-type semiconductor layer 301.

[0056] When the N-type electrode 200 is energized, it injects current into the N-type semiconductor layer 201 to generate electrons. When the P-type electrode 300 is energized, it injects current into the P-type semiconductor layer 301 to generate holes. Electrons and holes recombine in the light-emitting layer 10 to generate radiated photons.

[0057] Similar to traditional laser diodes, conventional resonant cavity light-emitting diodes (LEDs) also have only one light-emitting layer, resulting in low light extraction efficiency and a high emission threshold current. When multi-wavelength resonant cavity LEDs are required, multiple LEDs must be used in combination. However, these multi-wavelength LEDs also suffer from complex structures, difficult assembly, large size, and high cost.

[0058] The diode light-emitting device, laser light-emitting device, and resonant cavity light-emitting device provided in this application improve the external quantum efficiency (EQE) of the diode light-emitting device by incorporating a reflector 100 in the diode light-emitting device to form a resonant cavity, allowing light emitted from the light-emitting composite layer to be reflected multiple times. The resonant cavity reflects 100% of wavelengths of light that do not need to be emitted, preventing central photon leakage. By incorporating a first light-emitting layer 400 and a second light-emitting layer 500 in the light-emitting composite layer, the light emitted from the first light-emitting layer 400 can excite the second light-emitting layer 500 to emit light. The first light-emitting layer 400 forms a pump region and a functional region, while the second light-emitting layer 500 forms a functional region. This functional region can be the gain region, color conversion region, beam shaping region, and spectral half-width modulation region of the laser light-emitting device, or it can be the color conversion region, beam shaping region, and spectral half-width modulation region of the resonant cavity light-emitting device. By placing the pump region and the functional region in two light-emitting layers 10, the short-wavelength light of the first light-emitting layer 400 excites the long-wavelength light of the second light-emitting layer 500, that is, the high-energy light of the first light-emitting layer 400 excites the low-energy light of the second light-emitting layer 500, which enables different regions to achieve efficient photoluminescence and efficient electroluminescence respectively, thereby improving the luminous efficiency and EQE of the diode light-emitting device and reducing the threshold current of light emission.

[0059] The first light-emitting layer 400 emits light at a short wavelength, possessing inherently high EQE and luminous efficiency. Furthermore, during fabrication, the second light-emitting layer 500 is epitaxially grown first, followed by the first light-emitting layer 400. The close proximity of the first and second light-emitting layers allows the second layer 500 to release stress earlier, thereby reducing the crystal defect density of the first light-emitting layer 400. Compared to traditional short-wavelength light-emitting layers 10, this application exhibits a higher EQE. Because the first light-emitting layer 400 serves as the pump region with a high EQE, the diode light-emitting device also possesses a high EQE, and its threshold current is relatively extremely low.

[0060] Furthermore, the diode light-emitting device of this application has a relatively simple structure, low manufacturing difficulty, high reliability, and low cost. When applied to laser light-emitting devices, this diode light-emitting device can improve the laser's light extraction efficiency; when used in laser displays, it can also improve resolution. Similarly, when applied to resonant cavity light-emitting devices, this diode light-emitting device can also improve light extraction efficiency and enhance light extraction performance.

[0061] The embodiments of this application will now be described in detail with reference to the accompanying drawings.

[0062] In a first aspect, embodiments of this application provide a diode light-emitting device. Referring to Figures 5 and 6, the diode light-emitting device includes a reflector 100 and a light-emitting composite layer. The light-emitting composite layer includes an N-type electrode 200, a P-type electrode 300, a first light-emitting layer 400, and a second light-emitting layer 500.

[0063] In some embodiments of the diode light-emitting device, the reflector 100 can form a resonant cavity. The reflector 100 may include a first reflector 101 and a second reflector 102 disposed opposite to each other, and the resonant cavity is formed between the first reflector 101 and the second reflector 102.

[0064] The reflector 100 can be coated with a metal layer, a semiconductor thin film layer, or a dielectric thin film material, etc., to meet the requirements of different light transmission wavelengths. The resonant cavity formed by the reflector 100 can reflect the light generated by the light-emitting composite layer multiple times. When the light passes through the gain region, color conversion occurs, and the light intensity is amplified. The reflector 100 can also adjust the divergence angle, beam shape, and beam half-width, thereby improving the quality of the emitted beam.

[0065] For example, mirror 100 can be a distributed Bragg reflector (DBR) (multiple dielectric gratings). The DBR can be an all-nitride DBR structure, a hybrid DBR structure, or an all-dielectric DBR structure.

[0066] In the all-nitride DBR structure, the reflector 100 can be an epitaxially grown nitride. Appropriate materials, thicknesses, and number of periods are selected based on different wavelengths. For example, AlInN / GaN can be used with 5-50 periods.

[0067] All-dielectric DBR structure: The reflector 100 can be a dielectric film, typically an oxide such as SiO2, HfO2, Ti3O5, Ta2O5, TiO2, ZrO2, etc. The dielectric film is obtained by periodically overlapping high- and low-refractive-index films. For different wavelengths, appropriate materials, thicknesses, and stacking periods are selected, such as SiO2 / TiO2, SiO2 / Ta2O5, HfO2 / SiO2, and SiO2 / ZrO2, with 5-50 pairs of stacked layers.

[0068] Hybrid DBR structure: The first reflector 101 can be a nitride, and the second reflector 102 can be a dielectric film.

[0069] In this embodiment, the first reflector 101 is a total reflection mirror, and the second reflector 102 is a partial reflection mirror. The second reflector 102 is disposed on the light-emitting side of the diode light-emitting device.

[0070] As one possible implementation, referring to Figure 5, and in conjunction with Figures 9, 11, 13, and 15, along the stacking direction parallel to the first light-emitting layer 400 and the second light-emitting layer 500, the first reflector 101 and the second reflector 102 are respectively disposed on opposite sides of the light-emitting composite layer. The diode light-emitting device is a surface-emitting type. The arrows in the figures indicate the light emission direction.

[0071] As another possible implementation, referring to Figure 6, and in conjunction with Figures 10, 12, 14, and 16, along a stacking direction perpendicular to the first light-emitting layer 400 and the second light-emitting layer 500, the first reflector 101 and the second reflector 102 are respectively disposed on opposite sides of the light-emitting composite layer. The diode light-emitting device is an edge-emitting type. The arrows in the figures indicate the direction of light emission. The position of light emission corresponds to the light-emitting layer of the desired emitted wavelength. As shown in Figure 12, when the desired emitted wavelength is the emission wavelength of the first second light-emitting layer 500 (m+1), the arrow indicates the position of the emitted light corresponding to the location of the first second light-emitting layer 500 (m+1). When the desired emitted wavelength is the emission wavelength of the second second light-emitting layer 500 (m+2), the arrow can correspond to the location of the second second light-emitting layer 500 (m+2).

[0072] In this embodiment, the second reflector 102 transmits light with a wavelength greater than or equal to 1, and the same wavelength as the light emitted by the diode light-emitting device. The second reflector 102 is disposed on the light-emitting side of the diode light-emitting device, and the number and value of the wavelengths of the transmitted light from the second reflector 102 are equal to the number and value of the wavelengths emitted by the diode light-emitting device. That is, the second reflector 102 partially reflects the wavelength light that needs to be emitted and performs total internal reflection on the wavelength light that does not need to be emitted. The partial reflectivity can be 99.9%, 99%, 90%, or other reflectivities.

[0073] Referring to Figures 7, 8 and 25, the edge-emitting diode light-emitting device also includes a third reflector 103, which is located on the side of the second reflector 102 away from the light-emitting composite layer; the light reflection angle of the third reflector 103 is 45° relative to the stacking direction of the first light-emitting layer 400 and the second light-emitting layer 500.

[0074] The third reflector 103 can change the emission angle of the received light, reflecting the light emitted from the side of the diode light-emitting device (i.e., the side perpendicular to the stacking direction of the light-emitting composite layer) to the end face of the diode light-emitting device (i.e., the side of the stacking direction of the light-emitting composite layer), thereby adjusting the light emission position of the diode light-emitting device. In this way, by adding a 45° third reflector 103 to the structure of a side-emitting diode light-emitting device, a surface-emitting diode light-emitting device can be formed.

[0075] For example, in Figure 7, the third reflector 103 is tilted upward at 45° relative to the stacking direction of the first light-emitting layer 400 and the second light-emitting layer 500. The light emission direction of the diode light-emitting device is upward along the stacking direction of the first light-emitting layer 400 and the second light-emitting layer 500, forming a surface emission structure.

[0076] For example, in Figure 8, the third reflector 103 is tilted downward at 45° relative to the stacking direction of the first light-emitting layer 400 and the second light-emitting layer 500. The light emission direction of the diode light-emitting device is downward along the stacking direction of the first light-emitting layer 400 and the second light-emitting layer 500, forming a surface emission structure.

[0077] For example, in Figure 25, along the stacking direction perpendicular to the first light-emitting layer 400 and the second light-emitting layer 500, the third reflector 103 is disposed on the side of the second reflector 102 away from the corresponding light-emitting unit 700. The light emission position is shown by the arrow in the figure, forming a surface emission structure on the end face of the diode light-emitting device (i.e., on the side of the stacking direction of the light-emitting composite layer).

[0078] Referring again to Figures 5 and 6, the light-emitting recombination layer in the diode light-emitting device provided in this embodiment is located in the resonant cavity. The N-type electrode 200 and P-type electrode 300 of the light-emitting recombination layer are not shown in the figures. Under energized conditions, the N-type semiconductor layer and the P-type semiconductor layer can be excited to generate electrons and holes.

[0079] The first emitting layer 400 in the emitting composite layer is used to emit light with at least one wavelength, forming a pump region and a functional region. The second emitting layer 500 in the emitting composite layer is used to emit light with at least one wavelength, forming a functional region. The functional region can be a gain region, a color conversion region, a beam shaping region, and a spectral half-width modulation region, and the diode light-emitting device is used as a laser diode. Alternatively, the functional region can also be a color conversion region, a beam shaping region, and a spectral half-width modulation region, and the diode light-emitting device is used as a resonant cavity light-emitting diode.

[0080] A first light-emitting layer 400 is stacked on the side of the second light-emitting layer 500 near the P-type electrode 300. At least one wavelength of light emitted by the first light-emitting layer 400 is less than or equal to the wavelength of light emitted by the second light-emitting layer 500, and this first light-emitting layer 400 is used to excite the second light-emitting layer 500 to emit light. When the N-type electrode 200 and the P-type electrode 300 are energized, the generated electrons and holes recombine in the first light-emitting layer 400, exciting the luminescent material of the first light-emitting layer 400 to radiate photons, forming electroluminescence. In this case, the first light-emitting layer 400 serves as the pump region. The light emitted by the first light-emitting layer 400 can have one or more wavelengths, where at least one wavelength is less than the wavelength of light emitted by the second light-emitting layer 500. After receiving light of this wavelength, the second light-emitting layer 500 is excited to emit light, completing photoluminescence. The second light-emitting layer 500 serves as a functional region, namely a gain region, a color conversion region, a beam shaping region, and a spectral half-width modulation region. In some embodiments, after the first light-emitting layer 400 receives the light reflected by the reflector 100, it is re-excited to emit light. The first light-emitting layer 400 can also serve as a gain region, a color conversion region, a beam shaping region, and a spectral half-width modulation region.

[0081] The number of wavelengths of light emitted by the diode light-emitting device in this application embodiment is greater than or equal to 1. It can be understood that the first light-emitting layer 400 can emit light of one wavelength, and the second light-emitting layer 500 emits light of the same wavelength as the first light-emitting layer 400. Therefore, the number of wavelengths of light emitted by the diode light-emitting device is 1.

[0082] The first light-emitting layer 400 can emit light of one wavelength, while the second light-emitting layer 500 emits light of a different wavelength than the first light-emitting layer 400. The number of wavelengths of light emitted by the diode light-emitting device after amplification and mode selection by the resonant cavity can be 1 or 2.

[0083] The first light-emitting layer 400 can also emit light of at least two different wavelengths. The second light-emitting layer 500 can also emit light of at least one wavelength under the excitation of light emitted by the first light-emitting layer 400. The number of light wavelengths emitted by the diode light-emitting device after repeated reflection by the resonant cavity is greater than or equal to 1.

[0084] The first light-emitting layer 400 can also emit light of one wavelength. The second light-emitting layer 500, under the excitation of light emitted by the first light-emitting layer 400, can emit light of at least two light wavelengths. The number of light wavelengths emitted by the diode light-emitting device after amplification and mode selection by the resonant cavity is greater than or equal to 1.

[0085] The first light-emitting layer 400 can also emit at least two wavelengths of light. The second light-emitting layer 500, under the excitation of the light emitted by the first light-emitting layer 400, can emit at least two light-emitting wavelengths of light. The number of light wavelengths emitted by the diode light-emitting device after repeated reflection by the resonator is greater than or equal to 1.

[0086] For example, the light emitted by the first light-emitting layer 400 includes at least one of four bands: A, B, C, and G, and each band includes c different wavelengths. The light emitted by the second light-emitting layer 500 includes at least one of seven bands: A, B, C, G, Y, R, and IR, and each band includes d different wavelengths.

[0087] The A band can include at least one of the following: 400-420nm (violet light), 320-400nm (ultraviolet A, UVA), 275-320nm (ultraviolet UVB), and 200-275nm (ultraviolet UVC). The B band is 420-480nm; the C band is 480-510nm; the G band is 510-565nm; the Y band is 565-590nm; the R band is 590-740nm; and the IR band is 740nm-1.7μm. Wherein, c and d are both greater than or equal to 1, and can be less than or equal to 10.

[0088] For example, in some embodiments, the first light-emitting layer 400 is a blue light-emitting layer and the second light-emitting layer 500 is a green light-emitting layer; the light emitted by the diode light-emitting device includes green light, or a mixture of blue and green light.

[0089] In other embodiments, as shown in Figure 26, the first light-emitting layer 400 is a blue light-emitting layer (B), the second light-emitting layer 500 (1) is a red light-emitting layer (R), and the second light-emitting layer 500 (2) is a green light-emitting layer (G). The figure shows the second light-emitting layer 500 (1) disposed on the side of the second light-emitting layer 500 (2) away from the first light-emitting layer (400). Alternatively, the second light-emitting layer 500 (1) may be disposed on the side of the second light-emitting layer 500 (2) closer to the first light-emitting layer (400). Based on this structure, the light emitted by the diode light-emitting device includes red light (R wavelength light), or green light (G wavelength light), or blue light (B wavelength light), or a mixture of green and red light (G+R wavelength light), or a mixture of blue and red light (B+R wavelength light), or a mixture of blue and green light (B+G wavelength light), or a mixture of blue, green, and red light (B+G+R wavelength light), i.e., white light. The light emitted by the diode light-emitting device is not limited to the examples described above.

[0090] In other embodiments, the first light-emitting layer 400 is a blue light-emitting layer, and the second light-emitting layer 500 is a first green light-emitting layer, a second green light-emitting layer, and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or blue light, or first green light, or second green light, or a mixture of red light and first green light, or a mixture of red light, first green light, and second green light, or a mixture of blue light and red light, or a mixture of blue light and first green light, or a mixture of blue light and second green light, or a mixture of blue light, red light, and first green light, or a mixture of blue light, red light, and second green light, or a mixture of red light, first green light, second green light, and blue light, i.e., white light; the wavelengths of the first green light and the second green light are not equal. The light emitted by the diode light-emitting device is not limited to the above examples.

[0091] In other embodiments, the first light-emitting layer 400 is an ultraviolet light-emitting layer, and the second light-emitting layer 500 is a blue light-emitting layer. The light emitted by the diode light-emitting device includes ultraviolet light, blue light, or a mixture of blue and ultraviolet light. The light emitted by the diode light-emitting device is not limited to the examples described above.

[0092] In other embodiments, the first light-emitting layer 400 is an ultraviolet light-emitting layer, and the second light-emitting layer 500 is a green light-emitting layer and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or green light, or ultraviolet light, or a mixture of green and red light, or a mixture of ultraviolet and red light, or a mixture of ultraviolet, green and red light, i.e., white light. The light emitted by the diode light-emitting device is not limited to the above examples.

[0093] In other embodiments, the first light-emitting layer 400 is an ultraviolet light-emitting layer, and the second light-emitting layer 500 is a first green light-emitting layer, a second green light-emitting layer, and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or first green light, or second green light, or ultraviolet light, or a mixture of red light and first green light, or a mixture of red light and second green light, or a mixture of ultraviolet light and red light, or a mixture of ultraviolet light and first green light, or a mixture of ultraviolet light and second green light, or a mixture of ultraviolet light, red light, and first green light, or a mixture of ultraviolet light, red light, and second green light, or a mixture of red light, first green light, and second green light, or a mixture of red light, first green light, second green light, and ultraviolet light, i.e., white light; the wavelengths of the first green light and the second green light are not equal. The light emitted by the diode light-emitting device is not limited to the above examples.

[0094] In other embodiments, the first light-emitting layer 400 is a violet light-emitting layer, and the second light-emitting layer 500 is a blue light-emitting layer. The light emitted by the diode light-emitting device includes violet light, blue light, or a mixture of violet and blue light. The light emitted by the diode light-emitting device is not limited to the examples described above.

[0095] In other embodiments, the first light-emitting layer 400 is a violet light-emitting layer, and the second light-emitting layer 500 is a green light-emitting layer and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or green light, or violet light, or a mixture of green and red light, or a mixture of violet and red light, or a mixture of violet, green and red light, i.e., white light. The light emitted by the diode light-emitting device is not limited to the above examples.

[0096] In other embodiments, the first light-emitting layer 400 is a violet light-emitting layer, and the second light-emitting layer 500 is a green light-emitting layer, a blue light-emitting layer, and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or blue light, or green light, or violet light, or a mixture of red and blue light, or a mixture of red and green light, or a mixture of violet and red light, or a mixture of violet and blue light, or a mixture of violet, red, and blue light, or a mixture of violet, red, and green light, or a mixture of red, blue, green, and violet light; the wavelengths of the first green light and the second green light are not equal. The light emitted by the diode light-emitting device is not limited to the above examples.

[0097] In this embodiment of the application, as shown in Figures 29 and 30, the first light-emitting layer 400 may include a stacked barrier layer 11 and a potential well layer 12. The second light-emitting layer 500 also includes a stacked barrier layer and a potential well layer. The first light-emitting layer 400 and the second light-emitting layer 500 may be simply stacked barrier layers and potential well layers (quantum wells (QWs)), or they may be periodically stacked barrier layers and potential well layers (multiple quantum wells (MQWs)).

[0098] The materials for the barrier layer include group III-V semiconductor materials, such as aluminum, gallium, indium, and group V elements nitrogen, phosphorus, arsenic, antimony, and their compounds. The materials for the well layer include group II-VI semiconductor materials, such as zinc, cadmium, mercury, and group VI elements sulfur, selenium, tellurium, and their compounds. Taking a GaN laser diode as an example, the barrier layer can be GaN, and the well layer can be InGaN.

[0099] The surface-emitting diode light-emitting device of this application uses stacked barrier layers and potential well layers, and the number and thickness of the stacked barrier layers and potential well layers can be flexibly adjusted according to different cavity lengths of the resonant cavity (i.e., the length between the first reflector 101 and the second reflector 102).

[0100] Compared to traditional laser diodes, the thickness of the light-emitting layer 10 cannot be set too thick. The diode light-emitting device provided in this application, while controlling the thickness of the first light-emitting layer 400, increases the thickness of the second light-emitting layer 500. Since the second light-emitting layer 500 serves as a gain region, it generates more photons, allowing the thickness of the diode light-emitting device to be flexibly adjusted and improving its light-emitting effect.

[0101] Furthermore, referring to FIG26, the diode light-emitting device provided in this application embodiment is fabricated by first forming a second light-emitting layer 500 through epitaxial growth, and then forming a first light-emitting layer 400 through epitaxial growth. The first light-emitting layer 400 and the second light-emitting layer 500 are close to each other, and the second light-emitting layer 500 can release stress in advance, reducing crystal defects in the first light-emitting layer 400, which helps to improve the external quantum efficiency (EQE).

[0102] Referring again to Figures 5 and 6, the light-emitting composite layer includes a P-type semiconductor layer 301 and an N-type semiconductor layer 201. The P-type semiconductor layer 301 is stacked on the side of the first light-emitting layer 400 near the P-type electrode 300 and is connected to the P-type electrode 300; the first light-emitting layer 400 is electrically connected to the P-type electrode 300 through the P-type semiconductor layer 301.

[0103] An N-type semiconductor layer 201 is stacked on the side of the second light-emitting layer 500 closest to the N-type electrode 200 and is connected to the N-type electrode 200; the second light-emitting layer 500 is electrically connected to the N-type electrode 200 through the N-type semiconductor layer 201. When the N-type electrode 200 is energized, it injects current into the N-type semiconductor layer 201 to generate electrons. When the P-type electrode 300 is energized, it injects current into the P-type semiconductor layer 301 to generate holes.

[0104] Referring to Figure 28, taking a laser diode as an example of a diode-based light-emitting device, as shown in Figure 28(a), when the N-type electrode 200 (not shown) and the P-type electrode 300 are energized, current is passed into the N-type semiconductor layer 201 and the P-type semiconductor layer 301, generating electrons and holes, and photons are emitted from the first light-emitting layer 400. Referring to Figure 28(b), the photons emitted from the first light-emitting layer 400 excite the second light-emitting layer 500 to generate photons. Referring to Figure 28(c), the photons from both the first light-emitting layer 400 and the second light-emitting layer 500 are emitted and reflected in the resonant cavity. Referring to Figure 28(d), the photons reflected by the resonant cavity re-enter the first light-emitting layer 400 and the second light-emitting layer 500. The photons from the first light-emitting layer 400 that enter the second light-emitting layer 500 will again excite the second light-emitting layer 500 to emit more photons. Some of the photons from the first light-emitting layer 400 that enter the first light-emitting layer 400 will also excite the first light-emitting layer 400 to emit more photons. The short-wavelength light from the first light-emitting layer 400 excites the long-wavelength light from the second light-emitting layer 500; that is, the high-energy light from the first light-emitting layer 400 excites the low-energy light from the second light-emitting layer 500. Thus, after mode selection and amplification by the resonant cavity, the light is finally emitted. Based on the above light emission principle, the diode light-emitting device provided in this application embodiment can improve luminous efficiency, increase EQE, reduce threshold current, and more easily form multi-wavelength light through photoexcitation.

[0105] The diode light-emitting device provided in the embodiments of this application may also include an optical waveguide structure.

[0106] Referring to Figures 15 and 16, as one feasible implementation, the optical waveguide structure may include a P-type waveguide layer 302 and an N-type waveguide layer 202. The P-type waveguide layer 302 is stacked on the side of the first light-emitting layer 400 near the P-type semiconductor layer 301 and is connected to the P-type semiconductor layer 301; the N-type waveguide layer 202 is stacked on the side of the second light-emitting layer 500 near the N-type semiconductor layer 201 and is connected to the N-type semiconductor layer 201.

[0107] The P-type waveguide layer 302 and the N-type waveguide layer 202 can be made of materials with high optical refractive index. The N-type waveguide layer 202 has a refractive index of n1, and the P-type waveguide layer 302 has a refractive index of n2. The first light-emitting layer 400 and the second light-emitting layer 500 have a refractive index of n3, and the P-type semiconductor layer 301 and the N-type semiconductor layer 201 have a refractive index of n4. Wherein, n1>n3, n1>n4, n2>n3, and n2>n4. The N-type waveguide layer 202 and the P-type waveguide layer 302 can perform mode selection of light, achieving efficient transmission of light emitted by the diode light-emitting device.

[0108] Multiple holes can be formed in the N-type waveguide layer 202 and the P-type waveguide layer 302. For example, Al2O3 pores can be formed by oxidizing the ALAS layer, or small holes can be prepared in SiO2. Alternatively, raised cylindrical mesa surfaces can be obtained in the N-type waveguide layer 202 and the P-type waveguide layer 302 by inductively coupled plasma (ICP) etching, thereby achieving lateral confinement of the optical field.

[0109] As another feasible implementation, the light-emitting composite layer, the reflector 100, and the gas environment in the resonant cavity work together to achieve the effect of an optical waveguide. Taking the vertical-cavity surface-emitting laser (VCSEL) shown in Figure 26 as an example, the refractive indices of the N-type semiconductor layer 201, the first light-emitting layer 400, the second light-emitting layer 500, and the P-type semiconductor layer 301 are greater than the refractive index of the gas in the resonant cavity.

[0110] In this way, the light can be confined to the vertical direction of the laser emitted from the vertical cavity surface. Furthermore, patterning can be performed on the second reflector 102 to achieve lateral control of the laser. By patterning the first reflector 101 and the second reflector 102, and combining this with the relationship between the refractive indices of the N-type semiconductor layer 201, the first light-emitting layer 400, the second light-emitting layer 500, and the P-type semiconductor layer 301 and the refractive index of the gas in the resonant cavity, lateral control of the laser can also be achieved, realizing the function of an optical waveguide.

[0111] In the diode light-emitting device of this application embodiment, a hole isolation region is formed between the first light-emitting layer 400 and the second light-emitting layer 500. This hole isolation region can block the migration of holes generated in the P-type semiconductor layer 301 to the second light-emitting layer 500, so that the holes exist only in the first light-emitting layer 400.

[0112] As one feasible implementation, referring to Figures 11 and 12, there are m first light-emitting layers 400, where m is a positive integer greater than or equal to 1. When m is greater than or equal to 2, all m first light-emitting layers 400 are stacked; the wavelength of light emitted by at least one first light-emitting layer 400 is less than or equal to the wavelength of light emitted by the second light-emitting layer 500, and is used to excite the second light-emitting layer 500 to emit light.

[0113] For example, along the direction from the P-type electrode 300 to the N-type electrode 200, the first first light-emitting layer 400 (1), the second first light-emitting layer 400 (2), ... the (m-1)th first light-emitting layer 400 (m-1) and the mth first light-emitting layer 400 (m) are stacked sequentially. The m first light-emitting layers 400 can emit light of the same wavelength, or they can emit light of different wavelengths, or a portion of the first light-emitting layers 400 can emit light of the same wavelength.

[0114] The sum of the thicknesses of the m first light-emitting layers 400 is greater than or equal to the hole diffusion length generated by the P-type semiconductor layer 301; the sum of the thicknesses of the first first light-emitting layer 400 (1), the second first light-emitting layer 400 (2) ... and the (m-1)th first light-emitting layer 400 (m-1) is less than the hole diffusion length generated by the P-type semiconductor layer 301; the first first light-emitting layer 400 (1), the second first light-emitting layer 400 (2) ... and the mth first light-emitting layer 400 (m) together form a hole isolation region.

[0115] For example, when m is 1, the thickness of the first light-emitting layer 400 is greater than or equal to the hole diffusion length generated by the P-type semiconductor layer 301. For example, when m is 3, the sum of the thicknesses of the first and second light-emitting layers 400 is less than the hole diffusion length generated by the P-type semiconductor layer 301, and the sum of the thicknesses of the first (1), second (2), and third light-emitting layers 400 is greater than or equal to the hole diffusion length generated by the P-type semiconductor layer 301.

[0116] Thus, the holes generated in the P-type semiconductor layer 301 are limited by the hole diffusion length and can only migrate and distribute in the first light-emitting layer 400. Electron-hole recombination occurs in the first light-emitting layer 400, completing electroluminescence. Holes cannot migrate and distribute in the second light-emitting layer 500. Only electrons exist in the second light-emitting layer 500; there is no electron-hole recombination, and only photoluminescence occurs.

[0117] As one feasible implementation, referring to Figures 11 to 16, there are n second light-emitting layers 500, where n is a positive integer greater than or equal to 1. When n is greater than or equal to 2, all n second light-emitting layers 500 are stacked.

[0118] The n second light-emitting layers 500 can emit light of the same wavelength, or they can emit light of different wavelengths, or a portion of the second light-emitting layers 500 can emit light of the same wavelength. The n second light-emitting layers 500 include the first second light-emitting layer 500 (m+1), the second second light-emitting layer 500 (m+2), and the nth second light-emitting layer 500 (a). Where a is the sum of the numbers m and n, that is, the diode light-emitting device has a light-emitting layers.

[0119] Based on the above configuration, the wavelength of light emitted by the diode light-emitting device includes the wavelengths of light emitted by all the first light-emitting layers 400 and / or all the second light-emitting layers 500;

[0120] Alternatively, the wavelength of light emitted by the diode light-emitting device includes the wavelength of light emitted by a portion of the first light-emitting layer 400 and / or a portion of the second light-emitting layer 500.

[0121] For example, in some embodiments, the wavelength of light emitted by the diode light-emitting device includes the wavelengths of all the first light-emitting layers 400 and the second light-emitting layer 500.

[0122] In some embodiments, the wavelength of light emitted by the diode light-emitting device includes the wavelengths of all the second light-emitting layers 500. In other embodiments, the wavelength of light emitted by the diode light-emitting device includes the wavelengths of all the first light-emitting layers 400. In still other embodiments, the wavelength of light emitted by the diode light-emitting device includes the wavelengths of at least a portion of the first light-emitting layers 400. In yet another embodiment, the wavelength of light emitted by the diode light-emitting device includes the wavelengths of at least a portion of the first light-emitting layers 400 and at least a portion of the second light-emitting layers 500. In still another embodiment, the wavelength of light emitted by the diode light-emitting device includes the wavelengths of at least a portion of the first light-emitting layers 400 and at least a portion of the second light-emitting layers 500.

[0123] For example, taking the vertical-cavity surface-emitting laser shown in Figure 11 as an example, it may include one first emitting layer 400 and three second emitting layers 500. The wavelength of the first emitting layer 400 is 430nm, and the wavelengths of the three second emitting layers 500 are 450nm, 530nm, and 620nm, respectively. The vertical-cavity surface-emitting laser emits white laser light that is highly overlapping in the vertical direction. This white laser light includes a mixture of three wavelengths of 450nm, 530nm, and 620nm, or only emits light with a wavelength of 620nm, or emits a mixture of two wavelengths of 530nm and 620nm, or emits a mixture of four wavelengths of 430nm, 450nm, 530nm, and 620nm, or other combinations of mixed light.

[0124] For example, the first reflector 101 of the laser diode is a total reflection mirror, reflecting all wavelengths of light. The second reflector 102 is a partial reflection mirror. When the second reflector 102 completely reflects 620nm wavelength light and partially reflects a mixture of 450nm, 530nm, and 430nm wavelength light, the laser diode emits a mixed white laser light of 450nm, 530nm, and 430nm wavelengths. When the second reflector 102 totally reflects light of other wavelengths and partially reflects light of 620nm wavelength, the laser diode emits laser light of 620nm wavelength; when the second reflector 102 totally reflects light of other wavelengths and partially reflects mixed light of 530nm and 620nm wavelengths, the laser diode emits mixed laser light of 530nm and 620nm wavelengths; when the second reflector 102 partially reflects mixed light of four wavelengths (430nm, 450nm, 530nm, and 620nm), the laser diode emits mixed laser light of four wavelengths (430nm, 450nm, 530nm, and 620nm).

[0125] In this way, by adjusting the number and wavelength of the first light-emitting layer 400 and the second light-emitting layer 500, as well as the design of some reflectors, a multi-wavelength diode light-emitting device can be realized. The diode light-emitting device provided in this application has a relatively simple structure for realizing multi-wavelength light, and the wavelength forms are more abundant, which can meet a variety of light emission needs.

[0126] As another possible implementation, the light-emitting composite layer includes: a hole isolation layer 600, which is stacked between the first light-emitting layer 400 and the second light-emitting layer 500; the hole isolation layer forms a hole isolation region between the first light-emitting layer 400 and the second light-emitting layer 500.

[0127] The hole isolation layer can be made of materials with a high hole injection barrier and a low electron injection barrier, such as small organic molecules and polymers, such as BAlq (bis(2-methyl-8-quinolinolato)aluminum), TPBi (2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)), or silicon-doped GaN.

[0128] Among them, the sum of the thicknesses of the m first light-emitting layers 400 and the hole isolation layer is greater than or equal to the hole diffusion length of the P-type semiconductor layer; the sum of the thicknesses of the first first light-emitting layer 400, the second first light-emitting layer 400, ... and the (m-1)th first light-emitting layer 400 is less than the hole diffusion length of the P-type electrode 300.

[0129] For example, when m is 1, the sum of the thicknesses of the first light-emitting layer 400 and the hole isolation layer is greater than or equal to the hole diffusion length generated by the P-type semiconductor layer 301. For example, when m is 3, the sum of the thicknesses of the first first light-emitting layer 400 (1) and the second first light-emitting layer 400 (2) is less than the hole diffusion length generated by the P-type semiconductor layer 301, and the sum of the thicknesses of the first first light-emitting layer 400 (1), the second first light-emitting layer 400 (2), the third first light-emitting layer 400 (3) and the hole isolation layer is greater than or equal to the hole diffusion length generated by the P-type semiconductor layer 301.

[0130] Thus, the holes generated in the P-type semiconductor layer 301 are limited by the hole diffusion length and can only migrate and distribute in the first light-emitting layer 400. Electron-hole recombination occurs in the first light-emitting layer 400, completing electroluminescence. Holes cannot migrate and distribute in the second light-emitting layer 500. Only electrons exist in the second light-emitting layer 500; there is no electron-hole recombination, and only photoluminescence occurs.

[0131] The diode light-emitting device provided in this application embodiment may further include multiple light-emitting units 700, and the structure of the multiple light-emitting units 700 is described in detail below.

[0132] Referring to Figures 17 to 25, the light-emitting layer 10 is divided into y light-emitting units 700, such as light-emitting unit 700 (1), light-emitting unit 700 (2), light-emitting unit 700 (3), light-emitting unit 700 (4)... light-emitting unit 700 (y), where y is a positive integer greater than or equal to 1; when y is greater than 1, the y light-emitting units 700 are arranged at intervals along the direction perpendicular to the P-type semiconductor layer 301 to the N-type semiconductor layer 201. The diode light-emitting device may also include y resonant cavities, and the y light-emitting units 700 may be located in the y resonant cavities. For example, one light-emitting unit 700 may be located in one resonant cavity, or at least two light-emitting units 700 may be located in one resonant cavity.

[0133] The y light-emitting units 700 can share the same N-type electrode 200 and P-type electrode 300 to achieve synchronous driving. Alternatively, the y light-emitting units 700 can share the same N-type electrode 200 and use multiple different P-type electrodes 300; or, the y light-emitting units 700 can also share the same P-type electrode 300 and use multiple different N-type electrodes 200 to achieve independent driving.

[0134] All y light-emitting units 700 emit light of equal wavelength, and the number of wavelengths emitted by the diode light-emitting device is 1; or, among the y light-emitting units 700, at least two emit light of unequal wavelengths, and the number of wavelengths emitted by the diode light-emitting device is greater than or equal to 2. It is understood that multiple light-emitting units 700 can emit light of the same wavelength, or they can emit light of different wavelengths, or a portion of the light-emitting units 700 can emit light of the same wavelength.

[0135] The diode light-emitting device also includes an isolation structure 800, which is located between any two adjacent light-emitting units 700; the isolation structure 800 includes a channel; or, the isolation structure 800 includes a channel and an isolation material disposed in the channel; or, the isolation structure 800 is an ion implantation layer.

[0136] In some embodiments, referring to Figures 17 to 19, and Figures 21 and 23, the isolation structure 800 may consist only of a channel (CN), meaning the channel may not be filled with an isolation material. This channel spatially isolates multiple light-emitting units 700. Referring to Figures 20 and 24, the channel CN ​​is filled with an electrically insulating isolation material, such as silicon nitride or silicon oxide. In some embodiments, the electrically insulating isolation material may also have a light-shielding effect, such as a black organic material, thereby reducing or preventing light mixing between adjacent light-emitting units 700 and improving the light-emitting effect of the diode light-emitting device. In other embodiments, the isolation structure 800 may also be an ion-implanted layer, a structure formed by an ion implantation process that has both electrical isolation and light-shielding effects.

[0137] For example, a diode light-emitting device, acting as a laser diode, contains three laser points, i.e., three light-emitting units 700. Each light-emitting unit 700 includes one first light-emitting layer 400 and three second light-emitting layers 500. Two isolation structures 800 separate the three light-emitting units 700. Each light-emitting unit 700 has a resonant cavity, namely a first reflector 101 and a second reflector 102. The emission wavelength of the first light-emitting layer 400 is 430 nm, and the emission wavelengths of the three second light-emitting layers 500 are 465 nm, 535 nm, and 620 nm, respectively. Each of the three light-emitting units 700 can be driven independently. The first reflector 101 corresponding to each of the three light-emitting units 700 reflects all four wavelengths. The second reflector 102 corresponding to each of the three light-emitting units 700(1) reflects all wavelengths of 430nm, 535nm, and 620nm, and partially reflects wavelengths of 465nm. The light-emitting unit 700 emits a 465nm laser. The second reflector 102 corresponding to each of the three light-emitting units 700(2) reflects all wavelengths of 535nm, and reflects all wavelengths of the other three. The light-emitting unit 700(2) emits a 535nm laser. The second reflector 102 corresponding to each of the three light-emitting units 700(3) reflects all wavelengths of 620nm, and reflects all wavelengths of the other three. The light-emitting unit 700(3) emits a 620nm laser. This laser diode can be directly used in laser TVs. One laser diode chip can be used as one pixel unit, and it has high EQE and luminous efficiency.

[0138] For example, a diode light-emitting device, also acting as a laser diode, contains six laser points, i.e., six light-emitting units 700. Each light-emitting unit 700 includes one first light-emitting layer 400 and three second light-emitting layers 500. Five isolation structures 800 are connected between the six light-emitting units 700. Each light-emitting unit 700 has a resonant cavity, namely a first reflector 101 and a second reflector 102. The wavelength of the first light-emitting layer 400 is 430 nm, and the wavelengths of the three second light-emitting layers 500 are 465 nm, 535 nm, and 620 nm, respectively. Each of the six light-emitting units 700 can be driven independently, and the first reflector 101 corresponding to each of the six light-emitting units 700 provides total internal reflection for all four wavelengths. The second reflector 102 corresponding to the light-emitting units 700(1) and 700(2) reflects light at 430nm, 535nm, and 620nm, and partially reflects light at 465nm, so the light-emitting units 700(1) and 700(2) emit 465nm laser light; the second reflector 102 corresponding to the light-emitting units 700(3) and 700(4) reflects light partially at 535nm and reflects light completely at the other three wavelengths, so the light-emitting units 700(3) and 700(4) emit 535nm laser light; the second reflector 102 corresponding to the light-emitting units 700(5) and 700(6) reflects light partially at 620nm and reflects light completely at the other three wavelengths, so the light-emitting units 700(5) and 700(6) emit 620nm laser light. This laser diode can be directly applied to laser TVs. One laser diode chip can serve as two pixel units, and it also has high EQE and luminous efficiency.

[0139] The following description refers to Figures 17 to 20, with an example of multiple light-emitting units 700 sharing a P-type electrode 300 and using multiple different N-type electrodes 200.

[0140] The N-type semiconductor layer 201 includes y mutually independent sub-N-type semiconductor layers; y light-emitting units 700 are in contact with the P-type semiconductor layer 301 on the side close to the P-type semiconductor layer 301 and are connected to it; the y light-emitting units 700 are in contact with the y sub-N-type semiconductor layers one by one on the side close to the N-type semiconductor layer 201; the N-type electrode 200 includes y mutually independent sub-N-type electrodes, and the y sub-N-type electrodes are connected to the y sub-N-type semiconductor layers one by one.

[0141] When the P-type electrode 300 is energized, the energization states of the y sub-N-type electrodes can be controlled separately to achieve the individual control of the y light-emitting units 700, so as to achieve the light emission of all light-emitting units 700 or a portion of the light-emitting units 700.

[0142] Referring to Figures 18 and 19, at least a portion of the isolation structure 800 extends into the P-type semiconductor layer 301; and / or, at least a portion of the isolation structure 800 penetrates or extends into the reflector 100 near the N-type semiconductor layer 201. This improves the spatial isolation, electrical isolation, and light-blocking effects of the isolation structure 800.

[0143] The following description refers to Figures 21 to 24, with the example of multiple light-emitting units 700 sharing an N-type electrode 200 and using multiple different P-type electrodes 300.

[0144] The P-type semiconductor layer 301 includes y mutually independent sub-P-type semiconductor layers; y light-emitting units 700 are in contact with the N-type semiconductor layer 201 on the side close to the N-type semiconductor layer 201 and are connected to it; the y light-emitting units 700 are in contact with the y sub-P-type semiconductor layers one by one on the side close to the P-type semiconductor layer 301; the P-type electrode 300 includes y mutually independent sub-P-type electrodes, and the y sub-P-type electrodes are connected to the y sub-P-type semiconductor layers one by one.

[0145] When the N-type electrode 200 is energized, the energization states of the y sub-P-type electrodes can be controlled separately to achieve the individual control of the y light-emitting units 700, so as to achieve the light emission of all light-emitting units 700 or a portion of the light-emitting units 700.

[0146] Referring to Figures 22 and 23, at least a portion of the isolation structure 800 extends into the N-type semiconductor layer 201; and / or, at least a portion of the isolation structure 800 penetrates or extends into the reflector 100 near the P-type semiconductor layer 301. This improves the spatial isolation, electrical isolation, and light-blocking effects of the isolation structure 800.

[0147] In the aforementioned plurality of light-emitting units 700, the reflectors 100 can also be adapted to be multiple. For example, when the first reflector 101 and the second reflector 102 are disposed on opposite sides of the light-emitting composite layer along a stacking direction parallel to the first light-emitting layer 400 and the second light-emitting layer 500, there are y second reflectors 102, for example, second reflector 102 (1), second reflector 102 (2), second reflector 102 (3), second reflector 102 (4)... second reflector 102 (y). The y second reflectors 102 are spaced apart and are disposed one-to-one on the light-emitting side of the y light-emitting units 700; the number of wavelengths of light transmitted by the second reflector 102 is greater than or equal to 1, and the wavelengths of light emitted by the corresponding light-emitting units 700 are the same. In this way, the transmitted light wavelength of the second reflector 102 can better adjust the emitted light wavelength of the light-emitting unit 700 so that the emitted light of the diode light-emitting device is consistent with the requirements.

[0148] Figures 17 to 24 show that the y light-emitting units 700 of the diode light-emitting device are all surface-emitting structures. Figure 25 shows that the y light-emitting units 700 of the diode light-emitting device are edge-emitting structures. In the stacking direction perpendicular to the light-emitting composite layer, each light-emitting unit 700 has a first reflector 101 and a second reflector 102 on both sides. A third reflector 103 is provided on the side of the second reflector 102 facing away from the corresponding light-emitting unit 700. In this way, the light-emitting position of the light-emitting unit 700 of the edge-emitting structure shown in Figure 25 can be located at the end face of the diode light-emitting device (one side of the stacking direction of the light-emitting composite layer, i.e., the upper end face indicated by the arrow in the figure).

[0149] In other embodiments, referring to FIG25, when the first reflector 101 and the second reflector 102 are disposed on opposite sides of the light-emitting composite layer along a stacking direction perpendicular to the first light-emitting layer 400 and the second light-emitting layer 500, and a third reflector 103 is provided, the diode light-emitting device has y resonant cavities, y first reflectors 101, y second reflectors 102, and y third reflectors 103. The number of wavelengths of light transmitted by the second reflector 102 is greater than or equal to 1, and is the same as the wavelength of light emitted by the corresponding light-emitting unit 700.

[0150] Referring to FIG26, the diode light-emitting device further includes a substrate 900, and a light-emitting composite layer is disposed on the substrate 900; the substrate 900 is made of at least one of sapphire, silicon, gallium nitride, silicon carbide, aluminum oxide, quartz and gallium oxide.

[0151] The substrate 900 can be disposed in the resonant cavity, and can provide a supporting foundation for the light-emitting composite layer. The substrate 900 can be located on the N-type electrode 200, and an N-type semiconductor layer 201 and an N-type waveguide layer 202 are formed on top of the substrate 900. A second light-emitting layer 500 and a first light-emitting layer 400 can be sequentially disposed on top of the N-type waveguide layer 202. An oxide layer 904 and a P-type waveguide layer 302 are disposed on top of the first light-emitting layer 400. A P-type semiconductor layer 301 and an insulating layer 901 can be formed on top of the P-type waveguide layer 302. A P-type electrode 300 is disposed on top of the P-type semiconductor layer 301.

[0152] Figures 26 and 27 show relatively complete structural diagrams of a surface-emitting diode (SED) and an edge-emitting diode (EDD), respectively. Figure 26 is a schematic diagram of the structure of a SED with a surface-emitting structure, and Figure 27 is a schematic diagram of the structure of an edge-emitting diode.

[0153] In Figure 26, the first reflector 101 of the surface-emitting diode light-emitting device is disposed on the substrate 900, and the second reflector 102 is disposed on the P-type semiconductor layer 301. The N-type electrode 200 is connected to the N-type semiconductor layer 201. An insulating layer 901 is disposed on the second reflector 102, and the P-type electrode 300 passes through the insulating layer 901 and the second reflector 102 is connected to the P-type semiconductor layer 301.

[0154] In Figure 27, the first reflector 101 and the second reflector 102 of the edge-emitting diode light-emitting device are disposed on opposite sides of the light-emitting composite layer perpendicular to the stacking direction. An N-type electrode 200 is disposed at the bottom of the substrate 900 and connected to the N-type semiconductor layer 201. A P-type electrode 300 is disposed at the top of the insulating layer 901 and connected to the P-type semiconductor layer 301. An electron confinement layer 902 may also be disposed between the P-type waveguide layer 302 and the P-type semiconductor layer 301.

[0155] Secondly, embodiments of this application provide a laser light-emitting device, including the aforementioned diode light-emitting device. In optional embodiments, the laser light-emitting device is at least one of the following: a laser chip, an array laser, a laser chipset, a laser direct display, a laser projector, an infrared laser, and a visible light laser.

[0156] Among them, laser light-emitting devices can directly obtain the required mixed laser, such as white laser, from a single multi-wavelength diode light-emitting device chip, and then carry out other required applications.

[0157] When applied to array lasers, arrays can be created on pre-made epitaxial wafers using processes such as photolithography, dividing them into one or more arrays as needed, and then packaged to obtain an array-type laser. The shape and size of individual laser light-emitting devices, as well as the number and arrangement of semiconductor laser devices, can be flexibly adjusted according to different requirements. Alternatively, multiple diode light-emitting device chips can be arranged on the same substrate, then connected in series or parallel, and then packaged to obtain an array-type laser. These multiple diode light-emitting device chips can be identical or different, such as RG+BG, to obtain an array-type white laser. The shape and size of individual laser light-emitting devices, as well as their number and arrangement, can be flexibly adjusted according to different requirements.

[0158] When applied to laser chipsets, two or more diode light-emitting device chips are combined with a circuit board to form a chipset, which is then combined with a driver backplane, etc., according to the application to obtain a laser.

[0159] Thirdly, embodiments of this application provide a resonant cavity light-emitting device, including the aforementioned diode light-emitting device. In optional embodiments, the resonant cavity light-emitting device includes at least one of the following: a resonant cavity light-emitting diode chip, a resonant cavity light-emitting diode chipset, a communication light source, an illumination light source, a display, or a medical aesthetic light source.

[0160] The laser light-emitting device and resonant cavity light-emitting device of the embodiments of this application are based on the diode light-emitting device described above, and therefore have the same or corresponding technical effects as described above, which will not be repeated here.

[0161] In the description of the embodiments of this application, it should be understood that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection or an indirect connection through an intermediate medium, or the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances. The terms "upper," "lower," "front," "rear," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. In the description of this application, "multiple" means two or more, unless otherwise precisely specified.

[0162] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a particular order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented, for example, in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0163] The above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A diode light-emitting device, comprising: A reflector (100) forms a resonant cavity; A light-emitting composite layer is located in the resonant cavity; The light-emitting composite layer includes: N-type electrode (200); P-type electrode (300); The first light-emitting layer (400) is configured to emit light with at least one wavelength, forming a pump region and a functional region; The second light-emitting layer (500) is configured to emit light with at least one wavelength, forming a functional area; The first light-emitting layer (400) is stacked on the side of the second light-emitting layer (500) near the P-type electrode (300). The first light-emitting layer (400) emits light with at least one wavelength that is less than or equal to the wavelength of the light emitted by the second light-emitting layer (500) to excite the second light-emitting layer (500) to emit light. The number of wavelengths of light emitted by the diode light-emitting device is greater than or equal to 1.

2. The diode light emitting device of claim 1, wherein, The light-emitting composite layer further includes: A P-type semiconductor layer (301) is stacked on the side of the first light-emitting layer (400) near the P-type electrode (300) and connected to the P-type electrode (300); the first light-emitting layer (400) is electrically connected to the P-type electrode (300) through the P-type semiconductor layer (301); An N-type semiconductor layer (201) is stacked on the side of the second light-emitting layer (500) near the N-type electrode (200) and connected to the N-type electrode (200); the second light-emitting layer (500) is electrically connected to the N-type electrode (200) through the N-type semiconductor layer (201).

3. The diode light-emitting device according to claim 2 further includes an optical waveguide structure.

4. The diode light emitting device of claim 3, wherein, The optical waveguide structure includes: A P-type waveguide layer (302) is stacked on the side of the first light-emitting layer (400) near the P-type semiconductor layer (301) and is connected to the P-type semiconductor layer (301); An N-type waveguide layer (202) is stacked on the side of the second light-emitting layer (500) near the N-type semiconductor layer (201) and is connected to the N-type semiconductor layer (201).

5. The diode light emitting device of claim 4, wherein, The reflector (100) includes a first reflector (101) and a second reflector (102) disposed opposite to each other, and the resonant cavity is formed between the first reflector (101) and the second reflector (102); The first reflector (101) is a total reflection mirror, and the second reflector (102) is a partial reflection mirror. The side where the second reflector (102) is located forms the light-emitting side of the diode light-emitting device.

6. The diode light emitting device of claim 5, wherein, The second reflector (102) transmits light with a wavelength greater than or equal to 1, and the same wavelength as the light emitted by the diode light-emitting device.

7. The diode light emitting device of claim 5, wherein, Along the stacking direction parallel to the first light-emitting layer (400) and the second light-emitting layer (500), the first reflector (101) and the second reflector (102) are respectively disposed on opposite sides of the light-emitting composite layer.

8. The diode light emitting device of claim 5, wherein, Along the stacking direction perpendicular to the first light-emitting layer (400) and the second light-emitting layer (500), the first reflector (101) and the second reflector (102) are respectively disposed on opposite sides of the light-emitting composite layer.

9. The diode light-emitting device according to claim 8 further includes a third reflector (103), the third reflector (103) being disposed on the side of the second reflector (102) away from the light-emitting composite layer; The light reflection angle of the third reflector (103) is 45° relative to the stacking direction of the first light-emitting layer (400) and the second light-emitting layer (500).

10. The diode light emitting device of any of claims 2-9, wherein, A hole isolation region is formed between the first light-emitting layer (400) and the second light-emitting layer (500).

11. The diode light emitting device of claim 10, wherein, The first light-emitting layer (400) has m layers, where m is a positive integer greater than or equal to 1; When m is greater than or equal to 2, all m first light-emitting layers (400) are stacked. At least one of the first light-emitting layers (400) emits light with a wavelength less than or equal to that emitted by the second light-emitting layer (500) to excite the second light-emitting layer (500) to emit light.

12. The diode light emitting device of claim 11, wherein, Along the direction from the P-type electrode (300) to the N-type electrode (200), the first first light-emitting layer (400), the second first light-emitting layer (400), ... and the m-th first light-emitting layer (400) are stacked sequentially; The sum of the thicknesses of m of the first light-emitting layers (400) is greater than or equal to the hole diffusion length of the P-type semiconductor layer (301); The sum of the thicknesses of the first first light-emitting layer (400), the second first light-emitting layer (400) ... and the (m-1)th first light-emitting layer (400) is less than the hole diffusion length of the P-type electrode (300); The first first light-emitting layer (400), the second first light-emitting layer (400) ... and the mth first light-emitting layer (400) together form the hole isolation region.

13. The diode light emitting device of claim 10, wherein, The second light-emitting layer (500) has n layers, where n is a positive integer greater than or equal to 1; When n is greater than or equal to 2, all n second light-emitting layers (500) are stacked.

14. The diode light emitting device of claim 13, wherein, The wavelength of light emitted by the diode light-emitting device includes the wavelength of light emitted by at least one of the first light-emitting layers (400) or all the second light-emitting layers (500); Alternatively, the wavelength of light emitted by the diode light-emitting device includes the wavelength of light emitted by at least one of the first light-emitting layer (400) or the second light-emitting layer (500).

15. The diode light emitting device of claim 10, wherein, The light-emitting composite layer further includes: Hole isolation layer (600), wherein the hole isolation layer (600) is stacked between the first light-emitting layer (400) and the second light-emitting layer (500); The hole isolation layer (600) forms the hole isolation region between the first light-emitting layer (400) and the second light-emitting layer (500).

16. The diode light emitting device of claim 15, wherein, The first light-emitting layer (400) has m layers, where m is a positive integer greater than or equal to 1; When m is greater than or equal to 2, all m first light-emitting layers (400) are stacked. The sum of the thicknesses of the m first light-emitting layers (400) and the hole isolation layer (600) is greater than or equal to the hole diffusion length of the P-type semiconductor layer (301); the sum of the thicknesses of the first first light-emitting layer (400), the second first light-emitting layer (400) ... and the (m-1)th first light-emitting layer (400) is less than the hole diffusion length of the P-type electrode (300).

17. The diode light emitting device of any of claims 7 or 9, wherein, The light-emitting composite layer also includes y light-emitting units (700), where y is a positive integer greater than or equal to 1; When y is greater than or equal to 2, y light-emitting units (700) are arranged at intervals along the direction perpendicular to the P-type semiconductor layer (301) to the N-type semiconductor layer (201).

18. The diode light emitting device of claim 17, wherein, The wavelengths of light emitted by each of the y light-emitting units (700) are all equal, and the number of wavelengths of light emitted by the diode light-emitting device is 1; Alternatively, among the y light-emitting units (700), at least two light-emitting units (700) emit light with different wavelengths, and the number of wavelengths of light emitted by the diode light-emitting device is greater than or equal to 2.

19. The diode light-emitting device according to claim 17 further includes an isolation structure (800) located between any two adjacent light-emitting units (700); The isolation structure (800) includes a channel; or, the isolation structure (800) includes a channel and an isolation material disposed in the channel; or, the isolation structure (800) is an ion implantation layer.

20. The diode light emitting device of claim 19, wherein, The N-type semiconductor layer (201) comprises y mutually independent sub-N-type semiconductor layers; One of the y light-emitting units (700) is close to the side of the P-type semiconductor layer (301) and is in contact with the P-type semiconductor layer (301) to conduct electricity; one of the y light-emitting units (700) is close to the N-type semiconductor layer (201) and is in contact with the y sub-N-type semiconductor layers to conduct electricity. The N-type electrode (200) includes y mutually independent sub-N-type electrodes, and each of the y sub-N-type electrodes is connected to one of the y sub-N-type semiconductor layers.

21. The diode light emitting device of claim 20, wherein, At least part of the isolation structure (800) is configured as at least one of the following: At least a portion of the isolation structure (800) extends into the P-type semiconductor layer (301); Alternatively, at least a portion of the isolation structure (800) extends through or into the mirror (100) near the N-type semiconductor layer (201).

22. The diode light emitting device of claim 19, wherein, The P-type semiconductor layer (301) includes y mutually independent sub-P-type semiconductor layers; One of the y light-emitting units (700) is close to the side of the N-type semiconductor layer (201) and is in contact with the N-type semiconductor layer (201) to conduct electricity; one of the y light-emitting units (700) is close to the P-type semiconductor layer (301) and is in contact with the y sub-P-type semiconductor layers to conduct electricity. The P-type electrode (300) includes y mutually independent sub-P-type electrodes, and each of the y sub-P-type electrodes is connected to one of the y sub-P-type semiconductor layers.

23. The diode light emitting device of claim 22, wherein, At least part of the isolation structure (800) is configured as at least one of the following: At least a portion of the isolation structure (800) extends into the N-type semiconductor layer (201); Alternatively, at least part of the isolation structure (800) extends through or into the mirror (100) near the P-type semiconductor layer (301).

24. The diode light emitting device of claim 17, wherein, When the first reflector (101) and the second reflector (102) are disposed on opposite sides of the light-emitting composite layer along a stacking direction parallel to the first light-emitting layer (400) and the second light-emitting layer (500), the diode light-emitting device has y resonant cavities, and there are y second reflectors (102). The y second reflectors (102) are spaced apart and are disposed one-to-one on the light-emitting side of the y light-emitting units (700). The second reflector (102) transmits light with a wavelength greater than or equal to 1, and the wavelength is the same as that emitted by the corresponding light-emitting unit (700).

25. The diode light emitting device of claim 17, wherein, When the first reflector (101) and the second reflector (102) are disposed on opposite sides of the light-emitting composite layer along a stacking direction perpendicular to the first light-emitting layer (400) and the second light-emitting layer (500), and a third reflector (103) is provided, the diode light-emitting device has y resonant cavities, y first reflectors (101), y second reflectors (102) and y third reflectors (103). The second reflector (102) transmits light with a wavelength greater than or equal to 1, and the wavelength is the same as that emitted by the corresponding light-emitting unit (700).

26. The diode light emitting device of any of claims 1-7, wherein, Both the first light-emitting layer (400) and the second light-emitting layer (500) include a barrier layer (11) and a potential well layer (12) stacked together. The barrier layer is made of group III-V semiconductor materials, and the well layer is made of group II-VI semiconductor materials.

27. The diode light emitting device of any of claims 1-7, wherein, The light emitted by the first light-emitting layer (400) includes at least one of four bands: A, B, C, and G, and each band includes c different wavelengths; The light emitted by the second light-emitting layer (500) includes at least one of seven bands: A, B, C, G, Y, R, and IR, and each band includes d different wavelengths; The A band includes at least one of 400-420nm, 320-400nm, 275-320nm, and 200-275nm; the B band is 420-480nm; the C band is 480-510nm; the G band is 510-565nm; the Y band is 565-590nm; the R band is 590-740nm; and the IR band is 740nm-1.7μm. Both c and d are greater than or equal to 1 and less than or equal to 10.

28. The diode light emitting device of any of claims 1-7, wherein, At least one of the following constraints must be met: The first light-emitting layer (400) is a blue light-emitting layer, and the second light-emitting layer (500) is a green light-emitting layer; the light emitted by the diode light-emitting device includes green light, or blue light, or a mixture of blue light and green light; The first light-emitting layer (400) is a blue light-emitting layer, and the second light-emitting layer (500) is a green light-emitting layer and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or green light, or blue light, or a mixture of green and red light, or a mixture of blue and red light, or a mixture of blue and green light, or a mixture of blue, green and red light, i.e., white light; The first light-emitting layer (400) is a blue light-emitting layer, and the second light-emitting layer (500) is a first green light-emitting layer, a second green light-emitting layer, and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or blue light, or first green light, or second green light, or a mixture of red light and first green light, or a mixture of red light and second green light, or a mixture of blue light and red light, or a mixture of blue light and first green light, or a mixture of blue light and second green light, or a mixture of blue light, red light, and first green light, or a mixture of blue light, red light, and second green light, or a mixture of red light, first green light, and second green light, or a mixture of red light, first green light, second green light, and blue light, i.e., white light; the wavelengths of the first green light and the second green light are not equal; The first light-emitting layer (400) is an ultraviolet light-emitting layer, the second light-emitting layer (500) is a blue light-emitting layer, and the light emitted by the diode light-emitting device includes ultraviolet light, or blue light, or a mixture of ultraviolet light and blue light; The first light-emitting layer (400) is an ultraviolet light-emitting layer, and the second light-emitting layer (500) is a green light-emitting layer and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or green light, or ultraviolet light, or a mixture of green and red light, or a mixture of ultraviolet and green light, or a mixture of ultraviolet and red light, or a mixture of ultraviolet, green and red light, i.e., white light; The first light-emitting layer (400) is an ultraviolet light-emitting layer, and the second light-emitting layer (500) is a first green light-emitting layer, a second green light-emitting layer, and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or first green light, or second green light, or ultraviolet light, or a mixture of red light and first green light, or a mixture of red light and second green light, or a mixture of ultraviolet light and red light, or a mixture of ultraviolet light and first green light, or a mixture of ultraviolet light and second green light, or a mixture of ultraviolet light, red light, and first green light, or a mixture of ultraviolet light, red light, and second green light, or a mixture of red light, first green light, and second green light, or a mixture of red light, first green light, second green light, and ultraviolet light, i.e., white light; the wavelengths of the first green light and the second green light are not equal; The first light-emitting layer (400) is a violet light-emitting layer, the second light-emitting layer (500) is a blue light-emitting layer, and the light emitted by the diode light-emitting device includes violet light, or blue light, or a mixture of violet light and blue light; The first light-emitting layer (400) is a violet light-emitting layer, and the second light-emitting layer (500) is a green light-emitting layer and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or green light, or violet light, or a mixture of green and red light, or a mixture of violet and green light, or a mixture of violet and red light, or a mixture of violet, green and red light, i.e. white light; The first light-emitting layer (400) is a violet light-emitting layer, and the second light-emitting layer (500) is a green light-emitting layer, a blue light-emitting layer, and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or blue light, or green light, or violet light, or a mixture of red and blue light, or a mixture of red and green light, or a mixture of violet and red light, or a mixture of violet and blue light, or a mixture of violet, red, and blue light, or a mixture of violet, red, and green light, or a mixture of red, blue, green, and violet light; the wavelengths of the first green light and the second green light are not equal.

29. The diode light-emitting device according to any one of claims 1-7, further comprising a substrate (900), wherein the light-emitting composite layer is disposed on the substrate (900); The substrate (900) is made of at least one of sapphire, silicon, gallium nitride, silicon carbide, aluminum oxide, quartz and gallium oxide.

30. The diode light emitting device of any of claims 1-7, wherein, The diode light-emitting device is a laser diode, and the functional region includes a gain region, a color conversion region, a beam shaping region, and a spectral half-width modulation region. Alternatively, the diode light-emitting device is a resonant cavity light-emitting diode, and the functional area includes a color conversion area, a beam shaping area, and a spectral half-width modulation area.

31. A laser light-emitting device, comprising the diode light-emitting device according to any one of claims 1-30.

32. The laser light emitting device of claim 31, wherein, The laser light-emitting device is at least one of the following: Laser chips, array lasers, laser chipsets, laser direct display, laser projection, infrared lasers, and visible light lasers.

33. A resonant cavity light-emitting device, comprising the diode light-emitting device according to any one of claims 1-30.

34. The resonant cavity light emitting device of claim 33, wherein, The resonant cavity light-emitting device includes at least one of the following: Resonant cavity light-emitting diode chips, resonant cavity light-emitting diode chipsets, communication light sources, lighting light sources, displays, and medical and cosmetic light sources.

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