Composite substrate, epitaxial wafer, epitaxial wafer manufacturing method, and device manufacturing method

WO2026126291A1PCT designated stage Publication Date: 2026-06-18RESONAC CORP
View PDF -1 Cites 0 Cited by

Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
RESONAC CORP
Filing Date
2024-12-09
Publication Date
2026-06-18

Smart Images

  • Figure JP2024043446_18062026_PF_FP_ABST
    Figure JP2024043446_18062026_PF_FP_ABST
Patent Text Reader

Abstract

This composite substrate comprises a first single-crystal substrate layer and a second single-crystal substrate layer bonded to the first single-crystal substrate layer. The first single-crystal substrate layer has a higher threading dislocation density than that of the second single-crystal substrate layer. The composite substrate according to the present embodiment has a SORI of 40 μm or less.
Need to check novelty before this filing date? Find Prior Art