High-frequency module and communication device

Abstract

A high-frequency module (1) comprises: a power amplification circuit (10); a filter (31) having a passband that includes a transmission band of a band A; a filter (35) having a passband that includes a band B; a filter (34) having a passband that includes a reception band of a band C; inductors (51 and 52); and semiconductor components (41 and 43). The semiconductor component (41) includes a switch (301) that is connected to the filter (31) and the power amplification circuit (10), a switch (303) that is connected to the filter (35) and the power amplification circuit (10), and a switch (304) that is connected to the filter (35) and one end of the inductor (52). The semiconductor component (43) includes a low noise amplifier (22) and a switch (206) that is connected between the one end of the inductor (52) and the ground. One end of the inductor (51) is connected to the filter (34), and the other ends of the inductors (51 and 52) are connected to an input end of the low noise amplifier (22).

Description

High-frequency module and communication device

[0001] The present invention relates to a high-frequency module and a communication device.

[0002] In mobile communication devices such as mobile phones, with the progress of multi-bandization, a high-frequency module has been proposed in which a plurality of filters can be selectively connected to a power amplifier via a switch circuit. For example, Patent Document 1 discloses a high-frequency module including a switch circuit that can switch a plurality of transmission paths and can switch a transmission path and a reception path in a TDD (Time Division Duplex) mode.

[0003] Japanese Patent Application Laid-Open No. 2016-042696

[0004] However, in the above conventional technology, the reception sensitivity may decrease when signals of a plurality of bands are transmitted and received simultaneously.

[0005] Therefore, the present invention provides a high-frequency module and a communication device capable of suppressing a decrease in reception sensitivity.

[0006] The high-frequency module according to one aspect of the present invention includes a power amplification circuit, a first filter having a passband including a transmission band of a first band, a second filter having a passband including a second TDD band, a third filter having a passband including a reception band of a third band, a first inductor and a second inductor, and a first semiconductor component and a second semiconductor component. The first semiconductor component includes a first switch connected between the first filter and the power amplification circuit, a second switch connected between the second filter and the power amplification circuit, and a third switch connected between the second filter and one end of the first inductor. The second semiconductor component includes a low-noise amplification circuit and a fourth switch connected between one end of the first inductor and the ground. The other end of the first inductor is connected to a first input end of the low-noise amplification circuit, one end of the second inductor is connected to the third filter, and the other end of the second inductor is connected to a second input end of the low-noise amplification circuit.

[0007] A communication device according to one aspect of the present invention comprises a signal processing circuit configured to process high-frequency signals, and the high-frequency module described above configured to transmit high-frequency signals between the signal processing circuit and an antenna.

[0008] According to the present invention, it is possible to suppress the decrease in receiving sensitivity.

[0009] Figure 1 is a configuration diagram of a communication device according to an embodiment. Figure 2 is a circuit diagram of a high-frequency module according to an embodiment. Figure 3 is a diagram illustrating the first mode of a high-frequency module according to Comparative Example 1. Figure 4 is a diagram illustrating the first mode of a high-frequency module according to an embodiment. Figure 5 is a schematic plan view and a schematic cross-sectional view of a high-frequency module according to an embodiment. Figure 6 is a circuit diagram of a high-frequency module according to a modified example of the embodiment. Figure 7 is a diagram illustrating the first mode of a high-frequency module according to Comparative Example 2. Figure 8 is a diagram illustrating the first mode of a high-frequency module according to a modified example of the embodiment. Figure 9 is a schematic plan view of a second semiconductor component according to a modified example of the embodiment.

[0010] The embodiments of the present invention will be described in detail below with reference to the drawings. The embodiments described below are all general or specific examples. The numerical values, shapes, materials, components, arrangement of components, and connection configurations shown in the following embodiments are examples only and are not intended to limit the present invention.

[0011] The figures are schematic diagrams that have been appropriately emphasized, omitted, or had their proportions adjusted to illustrate the present invention, and are not necessarily strictly accurate representations. Actual shapes, positional relationships, and proportions may differ. In each figure, substantially identical components are denoted by the same reference numerals, and redundant explanations may be omitted or simplified.

[0012] In the following figures, the x and y axes are mutually orthogonal axes on a plane parallel to the main surface of the module substrate. The z axis is perpendicular to the main surface of the module substrate, with its positive direction indicating upwards and its negative direction indicating downwards.

[0013] In the following explanation, “connected” includes not only direct connections via terminals and / or wiring conductors, but also electrical connections via other circuit elements. “C is connected between A and B” and “C is connected between A and B” mean that one end of C is connected to A and the other end of C is connected to B, and that C is arranged in series in the path between A and B. “The path between A and B” means a path consisting of conductors that electrically connect A to B.

[0014] The "passband of a filter" is the portion of the frequency spectrum transmitted by the filter, and is defined as the frequency band between two frequencies that are 3 dB greater than the minimum power insertion loss.

[0015] "Transmitting band" refers to the frequency band used for transmission in a communication device, while "receiving band" refers to the frequency band used for reception in a communication device. For example, in an FDD (Frequency Division Duplex) band, different frequency bands (uplink band and downlink band) are used for the transmitting and receiving bands. In contrast, in a TDD band, the same frequency band is used for both the transmitting and receiving bands.

[0016] The term "harmonic band of a specified frequency band" refers to the frequency band from n times the low-frequency end of the specified frequency band to n times the high-frequency end of the specified frequency band, where n is a natural number greater than or equal to 2. For example, the second harmonic band of a specified frequency band is the frequency band from twice the low-frequency end to twice the high-frequency end of the specified frequency band, and the third harmonic band of a specified frequency band is the frequency band from three times the low-frequency end to three times the high-frequency end of the specified frequency band. If no order is specified, "harmonic band" refers to the harmonic bands of all orders.

[0017] A "band combination capable of simultaneous communication" refers to a combination of multiple frequency bands that can be transmitted, received, or transmitted and received simultaneously, and is predefined by standardization organizations (e.g., 3GPP (registered trademark) (3rd Generation Partnership Project) and IEEE (Institute of Electrical and Electronics Engineers)). Examples of "simultaneous communication" include CA (Carrier Aggregation), EN-DC (E-UTRAN New Radio - Dual Connectivity), NR-DC (New Radio - Dual Connectivity), and NE-DC (New Radio E-UTRAN - Dual Connectivity).

[0018] A "terminal" refers to the point where a conductor within an element terminates. However, if the impedance of the conductors between elements is sufficiently low, a terminal can be interpreted not only as a single point, but as any point on the conductor between elements or as an entire conductor.

[0019] "A component is placed on a substrate" includes a component being placed on the main surface of the substrate, and a component being placed within the substrate. "A component is placed on the main surface of the substrate" includes a component being placed in contact with the main surface of the substrate, as well as a component being placed above the main surface without contact with it (for example, a component being stacked on top of another component placed in contact with the main surface). Furthermore, "a component is placed on the main surface of the substrate" may also include a component being placed in a recess formed in the main surface. "A component is placed within the substrate" includes a component being encapsulated within the substrate, as well as a component being entirely placed between the two main surfaces of the substrate but with part of the component not covered by the substrate, and a component being placed within the substrate only.

[0020] "A is located between B and C" means that at least one of the line segments connecting any point in B and any point in C passes through A. "A is located closer to C than B" means that the distance between A and C is shorter than the distance between B and C. Here, "the distance between A(B) and C" means the length of the shortest line segment (i.e., the shortest distance) among the line segments connecting any point on the surface of A(B) and any point on the surface of C.

[0021] "Plan view of the module board" means viewing an object by orthogonally projecting it onto the xy-plane in the negative z-axis direction. "In the plan view of the module board, A overlaps with B" means that the region of A projected onto the xy-plane overlaps with the region of B projected onto the xy-plane.

[0022] Furthermore, terms indicating relationships between elements, such as "parallel" and "perpendicular," and terms indicating the shape of elements, such as "rectangle," as well as numerical ranges, do not represent only strict meanings but also include substantially equivalent ranges, such as errors of a few percent.

[0023] (Embodiment) [1. Configuration of the communication device 5] First, the configuration of the communication device 5 according to this embodiment will be described with reference to Figure 1. Figure 1 is a configuration diagram of the communication device 5 according to this embodiment.

[0024] Figure 1 shows an exemplary configuration, and the communication device 5 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the communication device 5 provided below should not be interpreted as restrictive.

[0025] The communication device 5 can be used to provide wireless connectivity. For example, the communication device 5 can be implemented in a UE (User Equipment) on a cellular network (also called a mobile network) such as a mobile phone, smartphone, tablet computer, or wearable device. In another example, by implementing the communication device 5, wireless connectivity can be provided to IoT (Internet of Things) sensor devices, medical / healthcare devices, cars, unmanned aerial vehicles (UAVs) (so-called drones), and automated guided vehicles (AGVs). In yet another example, by implementing the communication device 5, wireless connectivity can also be provided in a wireless access point or wireless hotspot.

[0026] The communication device 5 comprises a high-frequency module 1, antennas 2a and 2b, an RFIC (Radio Frequency Integrated Circuit) 3, and a BBIC (Baseband Integrated Circuit) 4.

[0027] The high-frequency module 1 can transmit high-frequency signals between antennas 2a and 2b and RFIC 3. The circuit configuration of the high-frequency module 1 will be described later with reference to Figure 2.

[0028] Antennas 2a and 2b are connected to the high-frequency module 1. Antennas 2a and 2b can receive high-frequency signals from the high-frequency module 1 and transmit them to the outside of the communication device 5. Furthermore, antennas 2a and 2b can receive high-frequency signals from outside the communication device 5 and supply them to the high-frequency module 1. Note that some or all of antennas 2a and 2b do not need to be included in the communication device 5. In addition, the communication device 5 may have one or more antennas in addition to antennas 2a and 2b.

[0029] RFIC3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, RFIC3 can process the transmission signal input from BBIC4 by upconversion or the like, and output the high-frequency transmission signal generated by this signal processing to high-frequency module 1. Furthermore, RFIC3 can also process the high-frequency reception signal input via high-frequency module 1 by downconversion or the like, and output the reception signal generated by this signal processing to BBIC4. RFIC3 may also have a control unit that controls switches and amplifiers, etc., of high-frequency module 1. Note that some or all of the control unit functions of RFIC3 may be included outside of RFIC3, for example, in BBIC4 or high-frequency module 1.

[0030] BBIC4 is a baseband signal processing circuit that processes signals using a frequency band lower than the high-frequency signal transmitted by the high-frequency module 1. Examples of signals processed by BBIC4 include image signals for image display and / or voice signals for communication via a speaker. Note that BBIC4 does not necessarily have to be included in the communication device 5.

[0031] [2. Circuit Configuration of High-Frequency Module 1] Next, the circuit configuration of the high-frequency module 1 according to the embodiment will be described with reference to Figure 2. Figure 2 is a circuit diagram of the high-frequency module 1 according to the embodiment.

[0032] Figure 2 shows an exemplary circuit configuration, and the high-frequency module 1 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as restrictive.

[0033] The high-frequency module 1 includes a power amplification circuit 10, filters 31, 32, 33, 34 and 35, inductors 51 and 52, semiconductor components 41, 42 and 43, a PA (Power Amplifier) ​​control circuit 60, antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, high-frequency output terminals 121 and 122, and a digital control terminal 130.

[0034] Antenna connection terminals 101 and 102 are external connection terminals of the high-frequency module 1. Antenna connection terminals 101 and 102 are terminals for supplying high-frequency signals to antennas 2a and 2b, and terminals for receiving high-frequency signals from antennas 2a and 2b. Antenna connection terminal 101 is connected to antenna 2a outside the high-frequency module 1 and to switch 305 of semiconductor component 42 inside the high-frequency module 1. Antenna connection terminal 102 is connected to antenna 2b outside the high-frequency module 1 and to switches 306 and 307 of semiconductor component 42 inside the high-frequency module 1.

[0035] The high-frequency input terminals 111 and 112 are external connection terminals of the high-frequency module 1 and are terminals for receiving high-frequency signals from the RFIC 3. The high-frequency input terminals 111 and 112 are connected to the RFIC 3 outside the high-frequency module 1 and are connected to the power amplifiers 11 and 12 of the power amplification circuit 10 inside the high-frequency module 1, respectively.

[0036] The high-frequency output terminals 121 and 122 are external connection terminals of the high-frequency module 1 and are terminals for supplying high-frequency signals to the RFIC 3. The high-frequency output terminals 121 and 122 are connected to the RFIC 3 outside the high-frequency module 1 and are connected to the low-noise amplifiers 21 and 22 of the semiconductor component 43, respectively, inside the high-frequency module 1.

[0037] The digital control terminal 130 is an external connection terminal of the high-frequency module 1 and is a terminal for receiving digital control signals from the RFIC 3. The digital control terminal 130 is connected to the RFIC 3 outside the high-frequency module 1 and to the PA control circuit 60 inside the high-frequency module 1.

[0038] The power amplification circuit 10 includes power amplifiers 11 and 12. Power amplifier 11 is connected between a high-frequency input terminal 111 and a filter 31. Specifically, the input terminal of power amplifier 11 is connected to the high-frequency input terminal 111. The output terminal of power amplifier 11 is connected to filter 31 via switch 301. Power amplifier 11 can amplify the transmission signal of band A using power supplied from a power source (not shown). Power amplifier 12 is connected between a high-frequency input terminal 112 and filters 33 and 35. Specifically, the input terminal of power amplifier 12 is connected to the high-frequency input terminal 112. The output terminal of power amplifier 12 is connected to filter 33 via switch 302 and to filter 35 via switch 303. Power amplifier 12 can amplify the transmission signals of bands B and C using power supplied from a power source (not shown). Note that power amplifier 12 may be divided into two power amplifiers, for example, one power amplifier for amplifying the transmission signal of band B and the other for amplifying the transmission signal of band C.

[0039] Each of the power amplifiers 11 and 12 may be composed of multiple amplifiers. For example, each of the power amplifiers 11 and 12 may be a multi-stage amplifier including multiple amplifiers connected in series. Alternatively, each of the power amplifiers 11 and 12 may be a differential or balanced power amplifier or Doherty amplifier including multiple amplifiers connected in parallel.

[0040] Semiconductor component 41 is an example of a first semiconductor component and includes switches 301, 302, 303, and 304. Semiconductor component 42 includes switches 305, 306, and 307. Semiconductor component 43 is an example of a second semiconductor component and includes low-noise amplifiers 21 and 22, as well as switches 201, 202, 203, 204, 205, and 206. Note that semiconductor component 42 does not necessarily have to be included in the high-frequency module 1.

[0041] For example, silicon single crystal (Si), gallium nitride (GaN), or silicon carbide (SiC) can be used as the semiconductor material for semiconductor components 41 to 43. In this case, some or all of the multiple switches included in semiconductor components 41 to 43 can be made up of field-effect transistors (FETs).

[0042] The low-noise amplifier 21 is included in the semiconductor component 43 and connected between the filter 32 and the high-frequency output terminal 121. Specifically, the input terminal of the low-noise amplifier 21 is connected to the filter 32 via the switch 201. The output terminal of the low-noise amplifier 21 is connected to the high-frequency output terminal 121. The low-noise amplifier 21 can amplify the received signal of band A using power supplied from a power supply (not shown). Note that the low-noise amplifier 21 does not have to be included in the high-frequency module 1. In this case, the low-noise amplifier 21 may be connected between the high-frequency module 1 and the RFIC 3, or it may be included in the RFIC 3. Also, an impedance matching element such as an inductor may be connected between the low-noise amplifier 21 and the filter 32.

[0043] The low-noise amplifier 22 is included in the semiconductor component 43 and is connected between filters 34 and 35 and the high-frequency output terminal 122. Specifically, the common input terminal of the low-noise amplifier 22 is connected to filter 34 via switch 202 and inductor 51, and to filter 35 via switch 203, inductor 52 and switch 304. The output terminal of the low-noise amplifier 22 is connected to the high-frequency output terminal 122. The low-noise amplifier 22 can amplify the received signals of bands B and C using power supplied from a power supply (not shown). The low-noise amplifier 22 constitutes a low-noise amplification circuit.

[0044] Incidentally, the low-noise amplifier 22 may be divided into two low-noise amplifiers. For example, it may be divided into a first low-noise amplifier for amplifying the received signal in band B and a second low-noise amplifier for amplifying the received signal in band C. In this case, the second input terminal of the second low-noise amplifier is connected to the filter 34 via the switch 202 and the inductor 51, and the first input terminal of the first low-noise amplifier is connected to the filter 35 via the switch 203, the inductor 52 and the switch 304. The second output terminal of the second low-noise amplifier and the first output terminal of the first low-noise amplifier are connected to the high-frequency output terminal 122. The first low-noise amplifier can amplify the received signal in band B, and the second low-noise amplifier can amplify the received signal in band C. The first low-noise amplifier and the second low-noise amplifier constitute a low-noise amplification circuit.

[0045] Incidentally, when the low-noise amplification circuit is composed of the first low-noise amplifier and the second low-noise amplifier, the switches 203 and 205 connected to the first input terminal of the first low-noise amplifier, and the switches 202 and 204 connected to the second input terminal of the second low-noise amplifier may be omitted. Specifically, the second input terminal of the second low-noise amplifier is connected to the filter 34 via the inductor 51, and the first input terminal of the first low-noise amplifier is connected to the filter 35 via the inductor 52 and the switch 304. In this case, instead of the conduction and non-conduction of the switch 203, the first low-noise amplifier is turned on and off. Also, instead of the conduction and non-conduction of the switch 202, the second low-noise amplifier is turned on and off. In each of the first low-noise amplifier and the second low-noise amplifier, for example, the amplification operation is turned on and off by supplying and blocking the power supply voltage and / or the bias current.

[0046] The filter 31 is an example of the first filter and is a band-pass filter having a pass band including the transmission band (A-Tx) of band A. The filter 31 can pass a signal within the transmission band of band A and attenuate a signal outside the transmission band of band A. One end of the filter 31 is connected to the switch 305, and the other end of the filter 31 is connected to the switch 301.

[0047] Filter 32 is a band-pass filter having a passband including the reception band (A-Rx) of band A. Filter 32 can pass signals within the reception band of band A and attenuate signals outside the reception band of band A. One end of filter 32 is connected to switch 305, and the other end of filter 32 is connected to switch 201. Note that filter 32 may not be included in high-frequency module 1.

[0048] Filter 33 is a band-pass filter having a passband including the transmission band (C-Tx) of band C. Filter 33 can pass signals within the transmission band of band C and attenuate signals outside the transmission band of band C. One end of filter 33 is connected to switch 306, and the other end of filter 33 is connected to switch 302. Note that filter 33 may not be included in high-frequency module 1.

[0049] Filter 34 is an example of a third filter and is a band-pass filter having a passband including the reception band (C-Rx) of band C. Filter 34 can pass signals within the reception band of band C and attenuate signals outside the reception band of band C. One end of filter 34 is connected to switch 306, and the other end of filter 34 is connected to one end of inductor 51.

[0050] Filter 35 is an example of a second filter and is a band-pass filter having a passband including the transmission band and reception band (B-TRx) of band B. Filter 35 can pass signals within the transmission band and reception band of band B and attenuate signals outside the transmission band and reception band of band B. One end of filter 35 is connected to switch 307, and the other end of filter 35 is connected to switches 303 and 304.

[0051] Note that filters 31 to 35 are not limited to band-pass filters. Some or all of filters 31 to 35 may be band-elimination filters, high-pass filters, low-pass filters, or any combination thereof.

[0052] Inductor 51 is an example of a second inductor, with one end connected to filter 34 and the other end connected to the common input terminal of low-noise amplifier 22 (the second input terminal of the low-noise amplification circuit) via switch 202. Inductor 51 is an element for impedance matching between low-noise amplifier 22 and filter 34.

[0053] Inductor 52 is an example of a first inductor, with one end connected to filter 35 via switch 304 and the other end connected to the common input terminal of low-noise amplifier 22 (first input terminal of low-noise amplification circuit) via switch 203. Inductor 52 is an element for impedance matching between low-noise amplifier 22 and filter 35.

[0054] Switch 301 is an example of a first switch and is an SPST (Single-Pole Single-Throw) type switch included in semiconductor component 41. Switch 301 is connected between the filter 31 and the power amplifier 11. Specifically, one end of switch 301 is connected to the power amplifier 11 and the other end of switch 301 is connected to the filter 31. Switch 301 can switch the connection and disconnection between the power amplifier 11 and the filter 31 based on a digital control signal supplied, for example, from RFIC 3.

[0055] Switch 302 is an SPST type switch included in semiconductor component 41. Switch 302 is connected between filter 33 and power amplifier 12. Specifically, one end of switch 302 is connected to power amplifier 12, and the other end of switch 302 is connected to filter 33. Switch 302 can switch the connection and disconnection between power amplifier 12 and filter 33 based on, for example, a digital control signal supplied from RFIC 3. Note that switch 302 does not necessarily have to be included in the high-frequency module 1.

[0056] Switch 303 is an example of a second switch and is an SPST type switch included in semiconductor component 41. Switch 303 is connected between the filter 35 and the power amplifier 12. Specifically, one end of switch 303 is connected to the power amplifier 12 and the other end of switch 303 is connected to the filter 35. Switch 303 can switch the connection and disconnection between the power amplifier 12 and the filter 35 based on a digital control signal supplied, for example, from RFIC 3.

[0057] Switch 304 is an example of a third switch and is an SPST type switch included in semiconductor component 41. Switch 304 is connected between one end of the filter 35 and the inductor 52. Specifically, one end of switch 304 is connected to the common input terminal of the low-noise amplifier 22 via the inductor 52 and switch 203, and the other end of switch 304 is connected to the filter 35. Switch 304 can switch the connection and disconnection between the low-noise amplifier 22 and the filter 35 based on a digital control signal supplied, for example, from RFIC 3.

[0058] Switch 305 is an SPST type switch included in semiconductor component 42. Switch 305 is connected between the antenna connection terminal 101 and filters 31 and 32. Specifically, one end of switch 305 is connected to the antenna connection terminal 101, and the other end of switch 305 is connected to filters 31 and 32. Switch 305 can switch the connection and disconnection between the antenna connection terminal 101 and filters 31 and 32 based on, for example, a digital control signal supplied from RFIC 3. Note that switch 305 does not necessarily have to be included in the high-frequency module 1.

[0059] Switch 306 is an SPST type switch included in semiconductor component 42. Switch 306 is connected between the antenna connection terminal 102 and filters 33 and 34. Specifically, one end of switch 306 is connected to the antenna connection terminal 102, and the other end of switch 306 is connected to filters 33 and 34. Switch 306 can switch the connection and disconnection between the antenna connection terminal 102 and filters 33 and 34 based on, for example, a digital control signal supplied from RFIC 3. Note that switch 306 does not necessarily have to be included in the high-frequency module 1.

[0060] Switch 307 is an SPST type switch included in semiconductor component 42. Switch 307 is connected between the antenna connection terminal 102 and the filter 35. Specifically, one end of switch 307 is connected to the antenna connection terminal 102, and the other end of switch 307 is connected to the filter 35. Switch 307 can switch the connection and disconnection between the antenna connection terminal 102 and the filter 35 based on, for example, a digital control signal supplied from RFIC 3. Note that switch 307 does not necessarily have to be included in the high-frequency module 1.

[0061] Switch 201 is an SPST type switch included in semiconductor component 43. Switch 201 is connected between filter 32 and low-noise amplifier 21. Specifically, one end of switch 201 is connected to the low-noise amplifier 21, and the other end of switch 201 is connected to filter 32. Switch 201 can switch the connection and disconnection between the low-noise amplifier 21 and filter 32 based on a digital control signal supplied, for example, from RFIC 3. Note that switch 201 does not necessarily have to be included in the high-frequency module 1.

[0062] Switch 202 is an example of a sixth switch and is an SPST type switch included in semiconductor component 43. Switch 202 is connected between the inductor 51 and the low-noise amplifier 22. Specifically, one end of switch 202 is connected to the common input terminal of the low-noise amplifier 22, and the other end of switch 202 is connected to the other end of the inductor 51. Switch 202 can switch the connection and disconnection between the low-noise amplifier 22 and the inductor 51 based on a digital control signal supplied, for example, from RFIC 3. Note that switch 202 does not necessarily have to be included in the high-frequency module 1.

[0063] Switch 204 is an SPST type switch included in semiconductor component 43. Switch 204 is connected between the other end of inductor 51 and ground. Specifically, one end of switch 204 is connected to the other end of switch 202 and the other end of inductor 51, and the other end of switch 204 is connected to ground. Switch 204 can switch between connected and disconnected exclusively with switch 202 based on a digital control signal supplied, for example, from RFIC 3. Note that switch 204 does not necessarily have to be included in the high-frequency module 1.

[0064] Switch 203 is an example of a fifth switch and is an SPST type switch included in semiconductor component 43. Switch 203 is connected between the inductor 52 and the low-noise amplifier 22. Specifically, one end of switch 203 is connected to the common input terminal of the low-noise amplifier 22, and the other end of switch 203 is connected to the other end of the inductor 52. Switch 203 can switch the connection and disconnection between the low-noise amplifier 22 and the inductor 52 based on a digital control signal supplied, for example, from RFIC 3. Note that switch 203 does not necessarily have to be included in the high-frequency module 1.

[0065] Switch 205 is an example of a seventh switch and is an SPST type switch included in semiconductor component 43. Switch 205 is connected between the other end of inductor 52 and ground. Specifically, one end of switch 205 is connected to the connection point of switch 203 and inductor 52, and the other end of switch 205 is connected to ground. Switch 205 can switch between connected and disconnected exclusively with switch 203 based on a digital control signal supplied, for example, from RFIC 3. Note that switch 205 does not necessarily have to be included in the high-frequency module 1.

[0066] Switch 206 is an example of a fourth switch and is an SPST type switch included in semiconductor component 43. Switch 206 is connected between one end of inductor 52 and ground. Specifically, one end of switch 206 is connected to the connection point of switch 304 and inductor 52, and the other end of switch 206 is connected to ground. Switch 206 can switch between connected and disconnected exclusively with switch 203 based on a digital control signal supplied, for example, from RFIC 3.

[0067] The PA control circuit 60 can control the power amplifiers 11 and 12. Specifically, the PA control circuit 60 outputs a control signal to the power amplification circuit 10 for controlling the power amplifiers 11 and 12 based on a digital control signal supplied from, for example, the RFIC 3. This controls, for example, the bias current supplied to the power amplifiers 11 and 12. Note that the PA control circuit 60 does not necessarily have to be included in the high-frequency module 1.

[0068] [3. Frequency Bands Applicable to High-Frequency Module 1] The frequency bands A, B, and C supported by high-frequency module 1 are described below.

[0069] Bands A, B, and C are frequency bands for communication systems built using Radio Access Technology (RAT). Bands A, B, and C are predefined by standardization bodies (e.g., 3GPP and IEEE). Examples of communication systems include 5GNR (5th Generation New Radio) systems, 4GLTE (4th Generation Long Term Evolution) systems, 2GGSM (2nd Generation Global System for Mobile communications) systems, and WLAN (Wireless Local Area Network) systems.

[0070] Band A is an example of the first band, and is an FDD band, a TDD band, or a SUL (Supplementary Uplink) band. Band A can be Band 8, Band 26, or Band 28 for LTE, or n8, n26, or n28 for 5GNR. However, Band A is not limited to these bands.

[0071] Band B is an example of a second TDD band. Band B can be Band 39, Band 40, or Band 41 for LTE, or n39, n40, or n41 for 5GNR. However, Band B is not limited to these bands.

[0072] Band C is an example of a third band, and is an FDD band, TDD band, or SDL (Supplementary Downlink) band. Bands A and C are a band combination that allows simultaneous communication. Specifically, transmission of signals in Band A and reception of signals in Band C can be performed simultaneously. Also, the harmonic band of the transmission band of Band A overlaps at least partially with the reception band of Band C. For example, if Band A is Band 8 or n8, Band C can be Band 3 or Band 41 for LTE, or n3 or n41 for 5GNR. Also, for example, if Band A is Band 28 or n28, Band C can be Band 1 for LTE, or n1 for 5GNR. Also, for example, if Band A is Band 26 or n26, Band C can be Band 41 for LTE, or n41 for 5GNR. Note that Band C is not limited to these bands.

[0073] [4. Communication Mode of High-Frequency Module 1] Next, the communication mode of the high-frequency module 1 according to this embodiment will be explained in comparison with the high-frequency module 500 according to Comparative Example 1.

[0074] [4.1. First Mode] The first modes of the high-frequency modules 1 and 500 will be described with reference to Figures 4 and 3, respectively. Figure 3 is a diagram illustrating the first mode of the high-frequency module 500 according to Comparative Example 1. Figure 4 is a diagram illustrating the first mode of the high-frequency module 1 according to the embodiment. In Figures 3 and 4, dashed arrows represent signal paths.

[0075] First, the configuration and circuit state of the first mode of the high-frequency module 500 according to Comparative Example 1 will be described. As shown in Figure 3, the high-frequency module 500 includes a power amplification circuit 10, filters 31, 32, 33, 34 and 35, inductors 51 and 52, semiconductor components 41, 42 and 543, a PA control circuit 60, antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, high-frequency output terminals 121 and 122, and a digital control terminal 130. The high-frequency module 500 according to Comparative Example 1 differs from the high-frequency module 1 according to the embodiment only in that semiconductor component 543 is placed in place of semiconductor component 43. Therefore, in the following description of the high-frequency module 500 according to Comparative Example 1, the same configuration as the high-frequency module 1 according to the embodiment will be omitted, and the different configurations will be described in detail.

[0076] The semiconductor component 543 includes low-noise amplifiers 21 and 22, as well as switches 201, 202, 203, 204, and 205. In other words, the semiconductor component 543 does not include the switch 206, compared to the semiconductor component 43.

[0077] Switch 201 is an SPST type switch included in semiconductor component 543. Switch 201 is connected between the filter 32 and the low-noise amplifier 21. Switch 202 is an SPST type switch included in semiconductor component 543. Switch 202 is connected between the inductor 51 and the low-noise amplifier 22. Switch 204 is an SPST type switch included in semiconductor component 543. Switch 204 is connected between the other end of the inductor 51 and ground. Switch 203 is an SPST type switch included in semiconductor component 543. Switch 203 is connected between the inductor 52 and the low-noise amplifier 22. Switch 205 is an SPST type switch included in semiconductor component 543. Switch 205 is connected between the other end of the inductor 52 and ground.

[0078] The first mode is a communication mode for simultaneously transmitting signals in band A and receiving signals in band C. In the high-frequency module 500, in the first mode, switches 301, 305, 306, 202, and 205 are closed, and switches 302, 303, 304, 307, 201, 203, and 204 are opened.

[0079] As a result, the transmission signal for band A is transmitted from RFIC 3 to antenna 2a via the high-frequency input terminal 111, power amplifier 11, switch 301, filter 31, switch 305, and antenna connection terminal 101. The reception signal for band C is transmitted from antenna 2b to RFIC 3 via the antenna connection terminal 102, switch 306, filter 34, inductor 51, switch 202, low-noise amplifier 22, and high-frequency output terminal 122.

[0080] At this time, since switches 301 and 304 are contained within the same semiconductor component 41, the harmonic components of the transmitted signal in band A leak from switch 301 to switch 304 within the semiconductor component 41. The harmonic components that leak into switch 304 are transmitted to inductor 52, partly because there is no filter in the path between switch 304 and inductor 52, and flow from inductor 51 to the low-noise amplifier 22 via the magnetic field coupling between inductor 52 and inductor 51. As a result, the frequency band of the harmonic components overlaps with the receiving band of band C at least partially, which reduces the receiving sensitivity of the received signal in band C in the high-frequency module 500.

[0081] Next, the circuit state of the first mode of the high-frequency module 1 according to the embodiment will be described. As shown in Figure 4, in the high-frequency module 1, in the first mode, switches 301, 305, 306, 202, 205, and 206 are closed, and switches 302, 303, 304, 307, 201, 203, and 204 are opened.

[0082] As a result, the transmission signal for band A is transmitted from RFIC 3 to antenna 2a via the high-frequency input terminal 111, power amplifier 11, switch 301, filter 31, switch 305, and antenna connection terminal 101. The reception signal for band C is transmitted from antenna 2b to RFIC 3 via the antenna connection terminal 102, switch 306, filter 34, inductor 51, switch 202, low-noise amplifier 22, and high-frequency output terminal 122.

[0083] In this configuration, since switches 301 and 304 are included in the same semiconductor component 41, harmonic components of the band A transmission signal leak from switch 301 to switch 304 within the semiconductor component 41. The harmonic components leaked to switch 304 are not transmitted to inductor 52, but instead flow to ground via switch 206 at the upstream end (one end) of inductor 52. Furthermore, since switch 206 and low-noise amplifier 22 are included in the same semiconductor component 43, the connection point between the path connecting switch 304 and inductor 52 and switch 206 can be brought closer to one end of inductor 52. This allows for highly accurate prevention of the harmonic components from flowing into inductor 52, thereby suppressing a decrease in the reception sensitivity of the band C reception signal in the high-frequency module 1. Additionally, since both ends of inductor 52 are connected to switches 206 and 205 (shunt type) which are connected to ground, unwanted components, including the harmonic components, can be prevented from flowing into inductor 52 with even greater accuracy when band B reception signals are not received (first mode). Furthermore, by including the switch 206 in the semiconductor component 43, the high-frequency module 1 can be miniaturized without increasing the number of components in the switch itself.

[0084] [4.2. Second Mode (Transmission State)] Next, the transmission state of the second mode of the high-frequency module 1 will be described.

[0085] The second mode is a communication mode for transmitting and receiving signals in Band B in TDD mode. Here, the connection state (transmission state) for transmitting signals in Band B in the second mode will be explained using Figure 2.

[0086] In the second mode of transmission, switches 303, 307, 204, 205, and 206 are closed, and switches 301, 302, 304, 305, 306, 201, 202, and 203 are opened. As a result, the band B transmission signal is transmitted from the RFIC 3 to the antenna 2b via the high-frequency input terminal 112, power amplifier 12, switch 303, filter 35, switch 307, and antenna connection terminal 102.

[0087] [4.3. Second Mode (Receiving State)] Next, the receiving state of the second mode of the high-frequency module 1 will be described. As mentioned above, the second mode is a communication mode for transmitting and receiving signals in Band B in TDD mode. Here, the connection state (receiving state) for receiving signals in Band B in the second mode will be explained using Figure 2.

[0088] In the second mode of reception, switches 304, 307, 203, and 204 are closed, and switches 301-303, 305, 306, 201, 202, 205, and 206 are opened. As a result, the received signal for band B is transmitted from antenna 2b to RFIC 3 via antenna connection terminal 102, switch 307, filter 35, switch 304, inductor 52, switch 203, low-noise amplifier 22, and high-frequency output terminal 122.

[0089] The communication modes of the high-frequency module 1 are not limited to the first and second modes described above. For example, the communication modes of the high-frequency module 1 may include a mode for simultaneously transmitting and receiving signals in band A. Also, for example, the communication modes of the high-frequency module 1 may include a mode for simultaneously transmitting and receiving signals in band C. Furthermore, for example, in addition to transmitting signals in band A and receiving signals in band C, the communication modes of the high-frequency module 1 may include a mode for simultaneously receiving signals in band A and / or transmitting signals in band C.

[0090] [5. Implementation Example of High-Frequency Module 1] Next, an implementation example of the high-frequency module 1 having the circuit configuration described above will be explained with reference to the drawings. Figure 5 is a schematic plan view and a schematic cross-sectional view of the high-frequency module 1 according to the embodiment. Figure 5(a) shows a view through to the main surface 90b of the module substrate 90 from the positive z-axis side, and Figure 5(b) shows a cross-sectional view along the VB-VB line in Figure 5(a).

[0091] Note that in Figure 5, the arrangement of components such as the power amplifier circuit 10, semiconductor components 42, filters 31-35, and PA control circuit 60 is omitted. Also, in order to easily understand the arrangement and connection relationships of each component, the illustration of the resin members covering multiple circuit components and the metal shields covering those resin members is omitted. Furthermore, in Figure 5, the low-noise amplifier and switches are labeled to indicate their nature, but these labels may not be attached to the actual components.

[0092] Figure 5 shows an exemplary configuration, and the high-frequency module 1 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as limiting.

[0093] The high-frequency module 1 includes a module substrate 90 in addition to the multiple circuit components shown in Figure 2. The module substrate 90 has two main surfaces 90a and 90b that face each other. Wiring and via conductors (not shown) are formed inside and / or on the module substrate 90.

[0094] The module substrate 90 can be, for example, a substrate made of a ceramic body (LTCC: Low Temperature Co-fired Ceramics) formed by low-temperature co-firing of a laminate of multiple dielectric layers, a substrate made of a ceramic body (HTCC: High Temperature Co-fired Ceramics) formed by high-temperature co-firing, a component-embedded substrate, a substrate having a redistribution layer (RDL: Redistribution Layer), or a printed circuit board, but is not limited to these.

[0095] The semiconductor component 41 and the inductor 52 are arranged on the main surface 90a of the module substrate 90. The semiconductor component 43 has main surfaces 43a and 43b, and is arranged on the main surface 90b of the module substrate 90 such that the main surface 43a faces the main surface 90b.

[0096] The semiconductor component 43 incorporates low-noise amplifiers 21 and 22, as well as switches 201 to 206, and is also provided with external connection terminals 431, 432, 433, and 434.

[0097] The external connection terminal 431 is located on the main surface 43a of the semiconductor component 43, and is connected to a switch 201 located inside the semiconductor component 43 and a filter 32 located outside the semiconductor component 43.

[0098] External connection terminal 432 is an example of a second external connection terminal, and is located on the main surface 43a of the semiconductor component 43. It is connected to the other end of switches 202 and 204 located inside the semiconductor component 43, and to the other end of the inductor 51 located outside the semiconductor component 43.

[0099] The external connection terminal 433 is an example of a first external connection terminal and is located on the main surface 43a of the semiconductor component 43. It is connected to the other end of the switches 203 and 205 located inside the semiconductor component 43, and to the other end of the inductor 52 located outside the semiconductor component 43.

[0100] The external connection terminal 434 is an example of a third external connection terminal and is located on the main surface 43a of the semiconductor component 43. It is connected to one end of a switch 206 located inside the semiconductor component 43 and an inductor 52 located outside the semiconductor component 43.

[0101] As shown in Figure 5(a), the external connection terminal 433 is positioned between the external connection terminals 432 and 434. This arrangement ensures a sufficient distance between the external connection terminals 432 and 434 by positioning the external connection terminal 433 between the external connection terminals 432 and 434. Therefore, in the first mode, leakage of harmonic components of the band A transmission signal from the external connection terminal 434 to the external connection terminal 432 can be suppressed. Consequently, a decrease in the receiving sensitivity of the band C reception signal in the high-frequency module 1 can be suppressed.

[0102] At least one of the semiconductor component 41 and the inductor 52 may be placed on the main surface 90b. The inductor 52 may also be composed of a coil conductor formed on the module substrate 90. The semiconductor component 43 may also be placed on the main surface 90a.

[0103] Furthermore, as shown in Figure 5(b), the connection node between the path connecting the switch 304 and the inductor 52 and the switch 206 is the electrode terminal 52a, which is one end of the inductor 52. In other words, the switch 206 is connected to the wiring branched from the electrode terminal 52a of the inductor 52. This makes it possible to prevent the above-mentioned harmonic components from flowing into the inductor 52 with high precision, thereby suppressing a decrease in the reception sensitivity of the band C received signal in the high-frequency module 1. In addition, since the wiring branching from the electrode terminal 52a of the inductor 52 and extending to the switch 206 is a via conductor 91, the wiring connecting the inductor 52 and the switch 206 can be shortened.

[0104] Furthermore, the multiple components of the high-frequency module 1 do not necessarily have to be distributed and arranged on both sides of the module board 90; they may be arranged on only one side of the module board 90.

[0105] [6. Summary of High-Frequency Module 1] As described above, the high-frequency module 1 according to this embodiment comprises a power amplifier circuit 10, a filter 31 having a passband including the transmission band of band A, a filter 35 having a passband including band B, a filter 34 having a passband including the reception band of band C, inductors 51 and 52, and semiconductor components 41 and 43. The semiconductor component 41 includes a switch 301 connected between the filter 31 and the power amplifier circuit 10, a switch 303 connected between the filter 35 and the power amplifier circuit 10, and a switch 304 connected between the filter 35 and one end of the inductor 52. The semiconductor component 43 includes a low-noise amplifier 22 and a switch 206 connected between one end of the inductor 52 and ground. The other end of the inductor 52 is connected to the first input terminal of the low-noise amplifier 22, one end of the inductor 51 is connected to the filter 34, and the other end of the inductor 51 is connected to the second input terminal of the low-noise amplifier 22.

[0106] According to this, in the first mode, the harmonic components of the band A transmission signal that leaked from switch 301 to switch 304 within the semiconductor component 41 are not transmitted to the inductor 52, but can be routed to ground via switch 206 at one end of the inductor 52. Furthermore, since switch 206 and low-noise amplifier 22 are included in the same semiconductor component 43, the connection point between the path connecting switch 304 and inductor 52 and switch 206 can be brought closer to one end of the inductor 52. As a result, the inflow of the above-mentioned harmonic components into the inductor 52 can be eliminated with high precision, and the inflow of the above-mentioned harmonic components into the low-noise amplifier 22 due to magnetic field coupling of inductors 52 and 51 in the first mode can be suppressed. Therefore, the decrease in the receiving sensitivity of the band C received signal in the high-frequency module 1 can be suppressed. In addition, by including switch 206 in the semiconductor component 43, the number of individual switch components does not increase compared to the high-frequency module 500 according to Comparative Example 1, and the high-frequency module 1 can be miniaturized.

[0107] For example, in the high-frequency module 1, the receiving bandwidth of band C overlaps at least partially with the harmonic bandwidth of the transmitting bandwidth of band A, and bands A and C are a band combination that enables simultaneous communication.

[0108] According to this, reducing the leakage of the band A transmission signal to the low-noise amplifier 22 in the first mode is effective in suppressing the decrease in the receiving sensitivity of band C.

[0109] For example, in the high-frequency module 1, in a first mode for simultaneously transmitting a signal in band A and receiving a signal in band C, switches 301 and 206 are closed and switches 303 and 304 are open; in a second mode transmission state for transmitting and receiving a signal in band B in TDD mode, switches 303 and 206 are closed and switches 301 and 304 are open; and in a second mode reception state, switch 304 is closed and switches 301, 303 and 206 are open.

[0110] According to this, the high-frequency module 1 can simultaneously transmit signals in band A and receive signals in band C, and can transmit and receive signals in band B in TDD mode.

[0111] For example, in the high-frequency module 1, the low-noise amplifier 22 includes a first low-noise amplifier having a first input terminal and a second low-noise amplifier having a second input terminal, and the semiconductor component 43 may further include a fifth switch connected between the other end of the inductor 52 and the first input terminal, and a sixth switch connected between the other end of the inductor 51 and the second input terminal.

[0112] According to this, the received signal in band B and the received signal in band C can be amplified individually by the first low-noise amplifier and the second low-noise amplifier, respectively.

[0113] For example, in the high-frequency module 1, the first input terminal and the second input terminal are a single common input terminal, the low-noise amplification circuit includes a low-noise amplifier 22 having a common input terminal, and the semiconductor component 43 further includes a switch 203 connected between the other end of the inductor 52 and the common input terminal, and a switch 202 connected between the other end of the inductor 51 and the common input terminal.

[0114] According to this, the received signals in band B and band C can be amplified by a common low-noise amplifier 22.

[0115] For example, in the high-frequency module 1, the semiconductor component 43 further includes a switch 205 connected between the connection point of the inductor 52 and the switch 203 (fifth switch) and ground.

[0116] This allows for enhanced isolation between the other end of the inductor 52 and the input terminal of the low-noise amplifier 22.

[0117] For example, in the high-frequency module 1, the semiconductor component 43 further includes an external connection terminal 433 to which the other end of the inductor 52 is connected, an external connection terminal 432 to which the other end of the inductor 51 is connected, and an external connection terminal 434 to which one end of the inductor 52 is connected, with the external connection terminal 433 being positioned between the external connection terminals 432 and 434.

[0118] According to this, by positioning external connection terminal 433 between external connection terminals 432 and 434, the distance between external connection terminals 432 and 434 can be ensured, so that in the first mode, leakage of harmonic components of the band A transmission signal from external connection terminal 434 to external connection terminal 432 can be suppressed. Therefore, a decrease in the receiving sensitivity of the band C received signal in the high-frequency module 1 can be suppressed.

[0119] For example, in the high-frequency module 1, band A is Band 8 for LTE or n8 for 5GNR, and band C is Band 3 or Band 41 for LTE, or n3 or n41 for 5GNR.

[0120] According to this, the high-frequency module 1 can be used in an LTE system and / or a 5GNR system.

[0121] For example, in the high-frequency module 1, band A is Band 28 for LTE or n28 for 5GNR, and band C is Band 1 for LTE or n1 for 5GNR.

[0122] According to this, the high-frequency module 1 can be used in an LTE system and / or a 5GNR system.

[0123] For example, in the high-frequency module 1, band A is Band 26 for LTE or n26 for 5GNR, and band C is Band 41 for LTE or n41 for 5GNR.

[0124] According to this, the high-frequency module 1 can be used in an LTE system and / or a 5GNR system.

[0125] For example, in the high-frequency module 1, band B is Band 39, Band 40, or Band 41 for LTE, or n39, n40, or n41 for 5GNR.

[0126] According to this, the high-frequency module 1 can be used in an LTE system and / or a 5GNR system.

[0127] Furthermore, the communication device 5 according to this embodiment includes an RFIC 3 configured to process high-frequency signals, and a high-frequency module 1 configured to transmit high-frequency signals between the RFIC 3 and antennas 2a and 2b.

[0128] According to this, the communication device 5 can achieve the same effect as the high-frequency module 1.

[0129] [7. Circuit Configuration of High-Frequency Module 1A According to Modified Example] Next, the circuit configuration of the high-frequency module 1A according to a modified example of the embodiment will be described with reference to Figure 6. Figure 6 is a circuit diagram of the high-frequency module 1A according to a modified example of the embodiment.

[0130] Figure 6 shows an exemplary circuit configuration, and the high-frequency module 1A can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1A provided below should not be interpreted as limiting.

[0131] The high-frequency module 1A comprises a power amplification circuit 10, filters 31, 32, and 35, inductors 52 and 53, semiconductor components 41A, 42A, and 43A, a PA control circuit 60, antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, high-frequency output terminals 122 and 123, and a digital control terminal 130. Compared to the high-frequency module 1 according to the embodiment, the high-frequency module 1A according to this modification differs in its circuit configuration in that it does not have components and signal paths for transmitting and receiving signals in band C. Therefore, in the following description of the high-frequency module 1A according to this modification, the same circuit configuration as the high-frequency module 1 according to the embodiment will be omitted, and the description will focus on the different circuit configuration.

[0132] Antenna connection terminals 101 and 102 are external connection terminals of the high-frequency module 1A. Antenna connection terminal 101 is connected to antenna 2a outside the high-frequency module 1A and to switch 305 of semiconductor component 42A inside the high-frequency module 1A. Antenna connection terminal 102 is connected to antenna 2b outside the high-frequency module 1A and to switch 307 of semiconductor component 42A inside the high-frequency module 1A.

[0133] The high-frequency output terminals 122 and 123 are external connection terminals of the high-frequency module 1A and are terminals for supplying high-frequency signals to the RFIC 3. The high-frequency output terminals 122 and 123 are connected to the RFIC 3 outside the high-frequency module 1A and are connected to the low-noise amplifiers 22 and 23 of the semiconductor component 43A, respectively, inside the high-frequency module 1A.

[0134] The power amplification circuit 10 includes power amplifiers 11 and 12. Power amplifier 11 is connected between a high-frequency input terminal 111 and a filter 31. Power amplifier 11 can amplify the transmission signal for band A using power supplied from a power source (not shown). Power amplifier 12 is connected between a high-frequency input terminal 112 and a filter 35. Specifically, the input terminal of power amplifier 12 is connected to the high-frequency input terminal 112. The output terminal of power amplifier 12 is connected to the filter 35 via a switch 303. Power amplifier 12 can amplify the transmission signal for band B using power supplied from a power source (not shown).

[0135] Semiconductor component 41A is an example of a first semiconductor component and includes switches 301, 303, and 304. Semiconductor component 42A includes switches 305 and 307. Semiconductor component 43A is an example of a second semiconductor component and includes low-noise amplifiers 22 and 23, as well as switches 202, 203, 204, 205, and 206. Note that semiconductor component 42A does not necessarily have to be included in the high-frequency module 1.

[0136] For example, silicon single crystal (Si), gallium nitride (GaN), or silicon carbide (SiC) can be used as the semiconductor material for semiconductor components 41A to 43A. In this case, some or all of the multiple switches included in semiconductor components 41A to 43A can be made up of FETs.

[0137] The low-noise amplifier 22 is an example of a first low-noise amplifier and is included in semiconductor component 43A, connected between the filter 35 and the high-frequency output terminal 122. Specifically, the first input terminal of the low-noise amplifier 22 is connected to the filter 35 via switch 203, inductor 52, and switch 304. The output terminal of the low-noise amplifier 22 is connected to the high-frequency output terminal 122. The low-noise amplifier 22 can amplify the received signal in band B using power supplied from a power supply (not shown).

[0138] The low-noise amplifier 23 is an example of a second low-noise amplifier and is included in semiconductor component 43A, connected between the filter 32 and the high-frequency output terminal 123. Specifically, the second input terminal of the low-noise amplifier 23 is connected to the filter 32 via a switch 202 and an inductor 53. The output terminal of the low-noise amplifier 23 is connected to the high-frequency output terminal 123. The low-noise amplifier 23 can amplify the received signal in band A using power supplied from a power source (not shown).

[0139] The low-noise amplifiers 22 and 23 constitute a low-noise amplification circuit.

[0140] Note that switches 203 and 205 connected to the first input terminal of the low-noise amplifier 22, and switches 202 and 204 connected to the second input terminal of the low-noise amplifier 23, are optional. Specifically, the first input terminal of the low-noise amplifier 22 is connected to the filter 35 via inductor 52 and switch 304, and the second input terminal of the low-noise amplifier 23 is connected to the filter 32 via inductor 53. In this case, the low-noise amplifier 22 is turned on and off instead of the conduction and non-conductivity of switch 203. Similarly, the low-noise amplifier 23 is turned on and off instead of the conduction and non-conductivity of switch 202. In the low-noise amplifiers 22 and 23, the amplification operation is turned on and off, for example, by supplying and cutting off the power supply voltage and / or bias current.

[0141] Note that the low-noise amplifiers 22 and 23 may be a single low-noise amplifier, and this single low-noise amplifier may amplify the received signal of band A and the received signal of band B. In this case, the common input terminal of the single low-noise amplifier is connected to switches 202 and 203. The single low-noise amplifier constitutes a low-noise amplification circuit.

[0142] Filter 31 is an example of a first filter and is a bandpass filter having a passband that includes the transmission bandwidth (A-Tx) of band A. One end of filter 31 is connected to switch 305 and the other end of filter 31 is connected to switch 301.

[0143] Filter 32 is an example of a third filter and is a bandpass filter having a passband that includes the receiving bandwidth (A-Rx) of band A. One end of filter 32 is connected to switch 305, and the other end of filter 32 is connected to one end of inductor 53.

[0144] Filter 35 is an example of a second filter and is a bandpass filter having a passband that includes the transmit and receive bands (B-TRx) of band B. One end of filter 35 is connected to switch 307, and the other end of filter 35 is connected to switches 303 and 304.

[0145] Filters 31, 32, and 35 are not limited to bandpass filters. Some or all of filters 31, 32, and 35 may be band-elimination filters, high-pass filters, low-pass filters, or any combination thereof.

[0146] Inductor 53 is an example of a second inductor, with one end connected to filter 32 and the other end connected to the input terminal of low-noise amplifier 23 (the second input terminal of the low-noise amplification circuit) via switch 202. Inductor 53 is an element for impedance matching between low-noise amplifier 23 and filter 32.

[0147] Inductor 52 is an example of a first inductor, with one end connected to filter 35 via switch 304 and the other end connected to the input terminal of low-noise amplifier 22 (first input terminal of low-noise amplification circuit) via switch 203. Inductor 52 is an element for impedance matching between low-noise amplifier 22 and filter 35.

[0148] Switch 301 is an example of a first switch and is an SPST type switch included in semiconductor component 41A. Switch 301 is connected between the filter 31 and the power amplifier 11.

[0149] Switch 303 is an example of a second switch and is an SPST type switch included in semiconductor component 41A. Switch 303 is connected between the filter 35 and the power amplifier 12.

[0150] Switch 304 is an example of a third switch and is an SPST type switch included in semiconductor component 41A. Switch 304 is connected between the filter 35 and one end of the inductor 52.

[0151] Switch 305 is an SPST type switch included in semiconductor component 42A. Switch 305 is connected between the antenna connection terminal 101 and filters 31 and 32. Note that switch 305 does not necessarily have to be included in the high-frequency module 1A.

[0152] Switch 307 is an SPST type switch included in semiconductor component 42A. Switch 307 is connected between the antenna connection terminal 102 and the filter 35. Note that switch 307 does not necessarily have to be included in the high-frequency module 1A.

[0153] Switch 202 is an example of a sixth switch and is an SPST type switch included in semiconductor component 43A. Switch 202 is connected between the inductor 53 and the low-noise amplifier 23. Specifically, one end of switch 202 is connected to the input terminal of the low-noise amplifier 23, and the other end of switch 202 is connected to the other terminal of the inductor 53. Note that switch 202 does not necessarily have to be included in the high-frequency module 1A.

[0154] Switch 204 is an SPST type switch included in semiconductor component 43A. Switch 204 is connected between the other end of inductor 53 and ground. Specifically, one end of switch 204 is connected to the other end of switch 202 and the other end of inductor 53, and the other end of switch 204 is connected to ground. Note that switch 204 does not necessarily have to be included in high-frequency module 1A.

[0155] Switch 203 is an example of a fifth switch and is an SPST type switch included in semiconductor component 43A. Switch 203 is connected between the inductor 52 and the low-noise amplifier 22. Specifically, one end of switch 203 is connected to the input terminal of the low-noise amplifier 22, and the other end of switch 203 is connected to the other end of the inductor 52. Note that switch 203 does not necessarily have to be included in the high-frequency module 1A.

[0156] Switch 205 is an example of a seventh switch and is an SPST type switch included in semiconductor component 43A. Switch 205 is connected between the other end of inductor 52 and ground. Specifically, one end of switch 205 is connected to the connection point between switch 203 and inductor 52, and the other end of switch 205 is connected to ground. Note that switch 205 does not necessarily have to be included in high-frequency module 1A.

[0157] Switch 206 is an example of a fourth switch and is an SPST type switch included in semiconductor component 43A. Switch 206 is connected between one end of inductor 52 and ground. Specifically, one end of switch 206 is connected to the connection point between switch 304 and inductor 52, and the other end of switch 206 is connected to ground.

[0158] [8. Frequency Bands Applicable to High-Frequency Module 1A] The frequency bands A and B supported by high-frequency module 1A are described below.

[0159] Bands A and B are frequency bands for communication systems built using RAT. Bands A and B are predefined by standardization bodies (e.g., 3GPP and IEEE). Examples of communication systems include 5GNR systems, 4GLTE systems, 2GGSM systems, and WLAN systems.

[0160] Band A is an example of the first band, and is an FDD band, a TDD band, or a SUL band. Band A can be Band 1 for LTE or n1 for 5GNR. However, Band A is not limited to these bands.

[0161] Band B is an example of a second TDD band. Band B can be Band 41 for LTE or n41 for 5GNR. However, Band B is not limited to these bands.

[0162] Bands A and B are a band combination that allows for simultaneous communication. Specifically, transmission of signals on band B and reception of signals on band A can be performed simultaneously.

[0163] [9. Communication Mode of High-Frequency Module 1A] Next, the communication mode of the high-frequency module 1A according to this modified example will be explained in comparison with the high-frequency module 500A according to Comparative Example 2.

[0164] [9.1. First Mode] The first modes of the high-frequency modules 1A and 500A will be described with reference to Figures 8 and 7, respectively. Figure 7 is a diagram illustrating the first mode of the high-frequency module 500A according to Comparative Example 2. Figure 8 is a diagram illustrating the first mode of the high-frequency module 1A according to a modified example of the embodiment. In Figures 7 and 8, dashed arrows represent signal paths. Also, the PA control circuit 60 is not shown in Figures 7 and 8.

[0165] First, the configuration and circuit state of the first mode of the high-frequency module 500A according to Comparative Example 2 will be described. As shown in Figure 7, the high-frequency module 500A includes a power amplification circuit 10, filters 31, 32 and 35, inductors 52 and 53, semiconductor components 41A, 42A and 543A, antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, and high-frequency output terminals 122 and 123. The high-frequency module 500A according to Comparative Example 2 differs from the high-frequency module 1A according to a modified embodiment only in that semiconductor component 543A is placed in place of semiconductor component 43A. Therefore, in the following, the same configuration as the high-frequency module 1A according to the modified embodiment will be omitted from the description of the high-frequency module 500A according to Comparative Example 2, and the different configurations will be described in detail.

[0166] The semiconductor component 543A includes low-noise amplifiers 22 and 23, as well as switches 202, 203, 204, and 205. In other words, semiconductor component 543A does not include switch 206, compared to semiconductor component 43A.

[0167] Switch 202 is an SPST type switch included in semiconductor component 543A. Switch 202 is connected between the inductor 53 and the low-noise amplifier 23. Switch 204 is an SPST type switch included in semiconductor component 543A. Switch 204 is connected between the other end of the inductor 53 and ground. Switch 203 is an SPST type switch included in semiconductor component 543A. Switch 203 is connected between the inductor 52 and the low-noise amplifier 22. Switch 205 is an SPST type switch included in semiconductor component 543A. Switch 205 is connected between the other end of the inductor 52 and ground.

[0168] The first mode is a communication mode for simultaneously transmitting signals in band B and receiving signals in band A. In the high-frequency module 500A, in the first mode, switches 303, 305, 307, 202, and 205 are closed, and switches 301, 304, 203, and 204 are opened.

[0169] As a result, the transmission signal for band B is transmitted from RFIC 3 to antenna 2b via the high-frequency input terminal 112, power amplifier 12, switch 303, filter 35, switch 307, and antenna connection terminal 102. The reception signal for band A is transmitted from antenna 2a to RFIC 3 via the antenna connection terminal 101, switch 305, filter 32, inductor 53, switch 202, low-noise amplifier 23, and high-frequency output terminal 123.

[0170] At this time, since switches 303 and 304 are included in the same semiconductor component 41A, the transmission signal for band B leaks from switch 303 to switch 304 within the semiconductor component 41A. The transmission signal leaked to switch 304 is transmitted to inductor 52, and flows from inductor 53 to the low-noise amplifier 23 via the magnetic field coupling between inductor 52 and inductor 53. As a result, distortion occurs in the amplification characteristics of the low-noise amplifier 23, reducing the reception sensitivity of the band A received signal in the high-frequency module 500A.

[0171] Next, the circuit state of the first mode of the high-frequency module 1A according to a modified embodiment will be described. As shown in Figure 8, in the high-frequency module 1A, in the first mode, switches 303, 305, 307, 202, 205, and 206 are closed, and switches 301, 304, 203, and 204 are opened.

[0172] As a result, the transmission signal for band B is transmitted from RFIC 3 to antenna 2b via the high-frequency input terminal 112, power amplifier 12, switch 303, filter 35, switch 307, and antenna connection terminal 102. The reception signal for band A is transmitted from antenna 2a to RFIC 3 via the antenna connection terminal 101, switch 305, filter 32, inductor 53, switch 202, low-noise amplifier 23, and high-frequency output terminal 123.

[0173] In this case, since switches 303 and 304 are included in the same semiconductor component 41A, the transmission signal for band B leaks from switch 303 to switch 304 within the semiconductor component 41A. The transmission signal leaked to switch 304 is not transmitted to inductor 52, but flows to ground via switch 206 at the upstream (one end) of inductor 52. Furthermore, since switch 206 and low-noise amplifier 22 are included in the same semiconductor component 43A, it is possible to bring the connection point between the path connecting switch 304 and inductor 52 and switch 206 closer to one end of inductor 52. As a result, the inflow of the transmission signal into inductor 52 can be eliminated with high precision, thereby suppressing a decrease in the reception sensitivity of the band A reception signal in the high-frequency module 1A. In addition, since both ends of inductor 52 are connected to switches 206 and 205 (shunt type) which are connected to ground, the inflow of unwanted components including the transmission signal into inductor 52 can be eliminated with even higher precision when the band B reception signal is not received (first mode). Furthermore, by including the switch 206 in the semiconductor component 43A, the high-frequency module 1A can be miniaturized without increasing the number of components in the switch itself.

[0174] [9.2. Second Mode] Next, the second mode of the high-frequency module 1 will be described. The second mode is a communication mode for receiving signals in band B. Here, the connection state (reception state) for receiving signals in band B in the second mode will be explained using Figure 6.

[0175] In the second mode, switches 304, 307, and 203 are closed, and switches 303, 205, and 206 are opened. As a result, the received signal for band B is transmitted from antenna 2b to RFIC 3 via antenna connection terminal 102, switch 307, filter 35, switch 304, inductor 52, switch 203, low-noise amplifier 22, and high-frequency output terminal 122.

[0176] The communication modes of the high-frequency module 1A are not limited to the first and second modes described above. For example, the communication modes of the high-frequency module 1A may include a mode for simultaneously transmitting and receiving signals in band A. Alternatively, the communication modes of the high-frequency module 1A may include a mode for simultaneously transmitting signals in band A in addition to receiving signals in band B.

[0177] [10. Implementation Example of High-Frequency Module 1A] Next, an implementation example of the high-frequency module 1A having the circuit configuration described above will be explained with reference to the drawings. Figure 9 is a schematic plan view of a semiconductor component 43A according to a modified example of the embodiment. In addition to the semiconductor component 43A, Figure 9 also shows inductors 52 and 53 connected to the semiconductor component 43A. In Figure 9, the low-noise amplifier, switch, and inductor are labeled, but these labels may not be attached to the actual components and elements.

[0178] Figure 9 shows an exemplary configuration, and the semiconductor component 43A can be mounted using a wide variety of circuit mounting and circuit technologies. Therefore, the description of the semiconductor component 43A provided below should not be interpreted as restrictive.

[0179] The high-frequency module 1A includes a module substrate 90 in addition to the multiple circuit components shown in Figure 6. The module substrate 90 has two main surfaces 90a and 90b that face each other. The semiconductor component 43A, inductors 52 and 53 shown in Figure 9 are arranged on the main surface of the module substrate 90.

[0180] Although not shown in Figure 9, the power amplifier circuit 10, semiconductor components 41A and 42A, filters 31, 32 and 35, and PA control circuit 60 are arranged on the main surface of the module board 90.

[0181] The semiconductor component 43A incorporates low-noise amplifiers 22 and 23, as well as switches 202 to 206, and is also provided with external connection terminals 432, 433, and 434.

[0182] External connection terminal 432 is an example of a second external connection terminal, and is located on the main surface of semiconductor component 43A. It is connected to switches 202 and 204 located inside semiconductor component 43A, and to the other end of inductor 53 located outside semiconductor component 43A.

[0183] External connection terminal 433 is an example of a first external connection terminal and is located on the main surface of semiconductor component 43A. It is connected to switches 203 and 205 located inside semiconductor component 43A, and to the other end of inductor 52 located outside semiconductor component 43A.

[0184] The external connection terminal 434 is an example of a third external connection terminal and is located on the main surface of the semiconductor component 43A. It is connected to one end of a switch 206 located inside the semiconductor component 43A and an inductor 52 located outside the semiconductor component 43A.

[0185] As shown in Figure 9, the external connection terminal 433 is positioned between the external connection terminals 432 and 434. This arrangement ensures a sufficient distance between the external connection terminals 432 and 434, thereby suppressing leakage of the band B transmission signal from the external connection terminal 434 to the external connection terminal 432 in the first mode. Consequently, a decrease in the reception sensitivity of the band A reception signal in the high-frequency module 1A can be suppressed.

[0186] Furthermore, the connection node between the path connecting the switch 304 and the inductor 52 and the switch 206 may be an electrode terminal at one end of the inductor 52. In other words, the switch 206 may be connected to wiring branched from the electrode terminal of the inductor 52. This makes it possible to prevent the transmission signal of band B from flowing into the inductor 52 in the first mode with high precision, thereby suppressing a decrease in the reception sensitivity of the band A received signal in the high-frequency module 1A.

[0187] [11. [Summary of High-Frequency Module 1A] As described above, the high-frequency module 1A according to this modified example comprises a power amplifier circuit 10, a filter 31 having a passband including the transmission band of band A, a filter 35 having a passband including band B, a filter 32 having a passband including the reception band of band C(A), inductors 52 and 53, and semiconductor components 41A and 43A. Semiconductor component 41A includes a switch 301 connected between the filter 31 and the power amplifier circuit 10, a switch 303 connected between the filter 35 and the power amplifier circuit 10, and a switch 304 connected between the filter 35 and one end of the inductor 52. Semiconductor component 43A includes a low-noise amplifier 22 and a switch 206 connected between one end of the inductor 52 and ground. The other end of the inductor 52 is connected to the input terminal of the low-noise amplifier 22 (the first input terminal of the low-noise amplifier circuit), one end of the inductor 53 is connected to the filter 32, and the other end of the inductor 53 is connected to the input terminal of the low-noise amplifier 23 (the second input terminal of the low-noise amplifier circuit).

[0188] According to this, in the first mode, the band B transmission signal leaking from switch 303 to switch 304 within semiconductor component 41A is not transmitted to inductor 52, but can be routed to ground via switch 206 at one end of inductor 52. Furthermore, since switch 206 and low-noise amplifier 22 are included in the same semiconductor component 43A, the connection point between the path connecting switch 304 and inductor 52 and switch 206 can be brought closer to one end of inductor 52. As a result, the inflow of the band B transmission signal into inductor 52 can be eliminated with high precision, and the inflow of the band B transmission signal into low-noise amplifier 23 due to magnetic field coupling of inductors 52 and 53 in the first mode can be suppressed. Therefore, the decrease in the receiving sensitivity of the band C(A) received signal in the high-frequency module 1A can be suppressed. In addition, by including switch 206 in semiconductor component 43A, the number of individual switch components does not increase compared to the high-frequency module 500A according to Comparative Example 2, and the high-frequency module 1A can be miniaturized.

[0189] For example, in the high-frequency module 1A, band C is band A, and bands A and B are a band combination that allows simultaneous communication.

[0190] According to this, reducing the leakage of the band B transmission signal to the low-noise amplifier 23 in the first mode is effective in suppressing the decrease in the receiving sensitivity of band A.

[0191] For example, in the high-frequency module 1A, in a first mode for simultaneously transmitting a signal in band B and receiving a signal in band A, switches 303 and 206 are closed and switches 301 and 304 are open, and in a second mode for receiving a signal in band B in TDD mode, switch 304 is closed and switches 303 and 206 are open.

[0192] According to this, the high-frequency module 1A can simultaneously transmit signals in band B and receive signals in band A, and can receive signals in band B.

[0193] For example, in the high-frequency module 1A, the low-noise amplification circuit includes a low-noise amplifier 22 having a first input terminal and a low-noise amplifier 23 having a second input terminal, and the semiconductor component 43A may further include a switch 203 connected between the other end of the inductor 52 and the first input terminal, and a switch 202 connected between the other end of the inductor 53 and the second input terminal.

[0194] According to this, the received signal in band B and the received signal in band A can be amplified individually by the low-noise amplifiers 22 and 23, respectively.

[0195] For example, in the high-frequency module 1A, the first input terminal and the second input terminal are a single common input terminal, the low-noise amplification circuit includes a low-noise amplifier having a common input terminal, and the semiconductor component 43A may further include a fifth switch connected between the other end of the inductor 52 and the common input terminal, and a sixth switch connected between the other end of the inductor 51 and the common input terminal.

[0196] According to this, the received signals in band B and band A can be amplified using a common low-noise amplifier.

[0197] For example, in the high-frequency module 1A, the semiconductor component 43A further includes a switch 205 connected between the connection point of the inductor 52 and the switch 203 (fifth switch) and ground.

[0198] This allows for enhanced isolation between the other end of the inductor 52 and the input terminal of the low-noise amplifier 22.

[0199] For example, in the high-frequency module 1A, the semiconductor component 43A further includes an external connection terminal 433 to which the other end of the inductor 52 is connected, an external connection terminal 432 to which the other end of the inductor 53 is connected, and an external connection terminal 434 to which one end of the inductor 52 is connected, with the external connection terminal 433 being positioned between the external connection terminals 432 and 434.

[0200] According to this, by positioning external connection terminal 433 between external connection terminals 432 and 434, the distance between external connection terminals 432 and 434 can be ensured, thereby suppressing leakage of the band B transmission signal from external connection terminal 434 to external connection terminal 432 in the first mode. Therefore, the decrease in the reception sensitivity of the band A reception signal in the high-frequency module 1A can be suppressed.

[0201] For example, in the high-frequency module 1A, band A is Band 1 for LTE or n1 for 5GNR, and band B is Band 41 for LTE or n41 for 5GNR.

[0202] According to this, the high-frequency module 1A can be used in an LTE system and / or a 5GNR system.

[0203] Furthermore, the communication device 5 according to this embodiment may also include an RFIC 3 configured to process high-frequency signals, and a high-frequency module 1A configured to transmit high-frequency signals between the RFIC 3 and antennas 2a and 2b.

[0204] According to this, the communication device 5 can achieve the same effect as the high-frequency module 1A.

[0205] (Other Embodiments) The high-frequency module and communication device according to the present invention have been described above based on embodiments and modifications. However, the high-frequency module and communication device according to the present invention are not limited to the above embodiments and modifications. The present invention also includes other embodiments realized by combining any components in the above embodiments and modifications, modifications obtained by applying various modifications to the above embodiments and modifications that a person skilled in the art could conceive of without departing from the spirit of the present invention, and various devices incorporating the above high-frequency module.

[0206] For example, in the circuit configuration of the high-frequency module according to each of the above embodiments and modifications, other circuit elements and wiring may be inserted between the paths connecting each circuit element and signal path disclosed in the drawings. For example, an impedance matching circuit may be connected between the power amplifier 11 and the switch 301, and / or between the power amplifier 12 and switches 302 and 303. Also, for example, an impedance matching circuit may be inserted between the filter 32 and the switch 305, and / or between the filter 34 and the switch 306. Also, for example, a coupler may be connected between the switch 305 and the antenna connection terminal 101, and / or between switches 306 and 307 and the antenna connection terminal 102.

[0207] This invention can be widely used in communication devices such as mobile phones as a high-frequency module positioned in the front end.

[0208] 1, 1A, 500, 500A High-frequency module 2a, 2b Antenna 3 RFIC 4 BBIC 5 Communication device 10 Power amplifier circuit 11, 12 Power amplifier 21, 22, 23 Low-noise amplifier 31, 32, 33, 34, 35 Filter 41, 41A, 42, 42A, 43, 43A, 543, 543A Semiconductor component 43a, 43b, 90a, 90b Main surface 51, 52, 53 Inductor 52a Electrode terminal 60 PA control circuit 90 Module board 91 Via conductor 101, 102 Antenna connection terminal 111, 112 High-frequency input terminal 121, 122, 123 High-frequency output terminal 130 Digital control terminal 201, 202, 203, 204, 205, 206, 301, 302, 303, 304, 305, 306, 307 Switches 431, 432, 433, 434 External connection terminals

Claims

Power amplifier circuit, A first filter having a passband that includes the transmission bandwidth of the first band, A second filter having a passband that includes a second TDD (Time Division Duplex) band, A third filter having a passband that includes the receiving band of the third band, The first inductor and the second inductor, The device comprises a first semiconductor component and a second semiconductor component, The first semiconductor component is A first switch connected between the first filter and the power amplification circuit, A second switch connected between the second filter and the power amplification circuit, The system includes a third switch connected between the second filter and one end of the first inductor, The second semiconductor component is, Low-noise amplification circuit, The system includes a fourth switch connected between one end of the first inductor and ground, The other end of the first inductor is connected to the first input terminal of the low-noise amplification circuit. One end of the second inductor is connected to the third filter, The other end of the second inductor is connected to the second input terminal of the low-noise amplification circuit. High-frequency module. 　 The receiving bandwidth of the third band overlaps at least partially with the harmonic bandwidth of the transmitting bandwidth of the first band. The first band and the third band are a band combination that allows simultaneous communication. The high-frequency module according to claim 1. 　 In a first mode for simultaneously transmitting a signal on the first band and receiving a signal on the third band, the first switch and the fourth switch are closed, and the second switch and the third switch are open. In a second mode transmission state for transmitting and receiving signals in the second TDD band in TDD mode, the second switch and the fourth switch are closed, and the first switch and the third switch are open. In the receiving state of the second mode, the third switch is closed and the first switch, the second switch and the fourth switch are open. The high-frequency module according to claim 2. 　 The third band is the first band, The first band and the second TDD band are a band combination that allows simultaneous communication. The high-frequency module according to claim 1. 　 In a first mode for simultaneously transmitting a signal in the second TDD band and receiving a signal in the first band, the second switch and the fourth switch are closed, and the first switch and the third switch are open. In the second mode for receiving signals in the second TDD band, the third switch is closed and the second and fourth switches are opened. The high-frequency module according to claim 4. 　 The low-noise amplification circuit described above is A first low-noise amplifier having the first input terminal, The system includes a second low-noise amplifier having the second input terminal, The aforementioned second semiconductor component further, A fifth switch connected between the other end and the first input end of the first inductor, A sixth switch connected between the other end and the second input end of the second inductor, A high-frequency module according to any one of claims 1 to 5. 　 The first input terminal and the second input terminal are a single common input terminal. The low-noise amplification circuit includes the low-noise amplifier having the common input terminal, The aforementioned second semiconductor component further, A fifth switch connected between the other end and the common input terminal of the first inductor, A sixth switch connected between the other end of the second inductor and the common input terminal, A high-frequency module according to any one of claims 1 to 5. 　 The aforementioned second semiconductor component further, The system includes a seventh switch connected between the connection point of the first inductor and the fifth switch and ground. The high-frequency module according to claim 6 or 7. 　 The aforementioned second semiconductor component further, A first external connection terminal connected to the other end of the first inductor, A second external connection terminal connected to the other end of the second inductor, The device comprises a third external connection terminal connected to one end of the first inductor, The first external connection terminal is positioned between the second external connection terminal and the third external connection terminal. A high-frequency module according to any one of claims 1 to 8. 　 The first band is Band 8 for LTE (Long Term Evolution), or n8 for 5GNR (5th Generation New Radio). The third band is Band 3 or Band 41 for LTE, or n3 or n41 for 5GNR. The high-frequency module according to claim 2 or 3. 　 The first band is Band 28 for LTE, or n28 for 5GNR. The third band is Band 1 for LTE, or n1 for 5GNR. The high-frequency module according to claim 2 or 3. 　 The first band is Band 26 for LTE, or n26 for 5GNR. The third band is Band 41 for LTE, or n41 for 5GNR. The high-frequency module according to claim 2 or 3. 　 The second TDD band is Band 39, Band 40, or Band 41 for LTE, or n39, n40, or n41 for 5GNR. A high-frequency module according to any one of claims 10 to 12. 　 The first band is Band 1 for LTE, or n1 for 5GNR. The second TDD band is Band 41 for LTE, or n41 for 5GNR. The high-frequency module according to claim 4 or 5. 　 A signal processing circuit configured to process high-frequency signals, A high-frequency module according to any one of claims 1 to 14, configured to transmit the high-frequency signal between the signal processing circuit and the antenna, comprising: Communication device.

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