Reaction chamber structure

Abstract

The present application relates to the field of plasma processing in semiconductor manufacturing, and provides a reaction chamber structure, comprising: a shower plate; a heating stage arranged below the shower plate and used for placing a wafer, the heating stage having a region to be heated; a lifting / lowering column used for driving the heating stage to ascend and descend between a starting position and a process position; and a heat reflecting member comprising a notched ring, a plurality of lifting / lowering pins, and at least one heat reflecting plate, wherein the notched ring is suspended below the heating stage by means of the plurality of lifting / lowering pins, the at least one heat reflecting plate is arranged on the notched ring, and the heat reflecting plate is arranged opposite to the region to be heated and is used for reflecting received heat toward the heating stage. The heat reflecting member of the present application allows for more flexible and convenient adjustment of the temperature of the heating stage, so as to optimize the uniformity of a thin film deposited on the wafer.

Description

Reaction chamber structure Technical Field

[0001] This application relates to plasma processing apparatus in the field of semiconductor manufacturing, and more particularly to a reaction chamber structure. Background Technology

[0002] Plasma-enhanced chemical vapor deposition (PECVD) equipment is used in semiconductor manufacturing processes to deposit insulating films, protective films, oxide films, metal films, etc. on wafers using the chemical reactions of gases under vacuum conditions.

[0003] In the high-temperature process of PECVD, the heating plate needs to be heated to a high temperature. In some processes, the wafer is quite sensitive to temperature. Due to the manufacturing tolerance of the heating plate and the influence of environmental factors in the reaction chamber structure, the heating temperature of the heating plate is uneven, resulting in regional temperature differences, which further affects the uniformity of the deposited film.

[0004] How to accurately and quickly adjust the temperature of the heating plate is a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0005] In view of the problems existing in the prior art, this application provides a reaction chamber structure.

[0006] This application provides a reaction chamber structure, including:

[0007] Sprayer plate;

[0008] A heating platform, located below the spray plate, is used to place the wafer, and the heating platform has a heating area;

[0009] A lifting column is used to drive the heating stage to move up and down between the starting position and the process position.

[0010] A heat reflector includes a notched ring, a plurality of lifting pins, and at least one heat reflector plate. The notched ring is suspended below the heating table by the plurality of lifting pins. The at least one heat reflector plate is disposed on the notched ring and is disposed opposite to the area to be heated, for reflecting the received heat to the heating table.

[0011] According to a reaction chamber structure provided in this application, the notched ring includes an inner notched ring, an outer notched ring, and a connecting portion. The outer notched ring and the inner notched ring are concentrically arranged, and the connecting portion is used to connect the inner notched ring and the outer notched ring. There is a gap between the inner notched ring and the outer notched ring.

[0012] According to a reaction chamber structure provided in this application, at least one heat reflector plate overlaps the inner ring of the notch and the outer ring of the notch.

[0013] According to a reaction chamber structure provided in this application, a first protrusion is provided on the outer side wall of the inner ring of the notch, and a second protrusion is provided on the inner side wall of the outer ring of the notch. The first protrusion has a first supporting surface, and the second protrusion has a second supporting surface. The first supporting surface and the second supporting surface are located on the same horizontal plane and are used to jointly support the at least one heat reflector.

[0014] According to a reaction chamber structure provided in this application, the first boss and / or the second boss are notched annular bosses.

[0015] According to a reaction chamber structure provided in this application, the outer diameter of the second boss is larger than the diameter of the area to be heated.

[0016] According to a reaction chamber structure provided in this application, a baffle and a through hole are provided on the heating platform. The through hole corresponds to the lifting pin. The first end of the lifting pin is detachably and fixedly connected to the outer ring of the notch through a snap-fit ​​structure. The second end of the lifting pin passes through the through hole and is movably connected to the heating platform through the baffle.

[0017] According to a reaction chamber structure provided in this application, a plurality of limiting holes are provided on the outer ring of the notch, and the number of limiting holes is greater than or equal to the number of lifting pins; the limiting holes include a first region and a second region, and when the snap-fit ​​structure is located in the first region, the lifting pin and the outer ring of the notch are detachable; when the snap-fit ​​structure is located in the second region, the lifting pin and the outer ring of the notch are fixedly connected.

[0018] According to a reaction chamber structure provided in this application, the diameter of the baffle is larger than the cross-sectional diameter of the through hole.

[0019] According to a reaction chamber structure provided in this application, the connecting portion consists of multiple support ridges disposed between the inner ring of the notch and the outer ring of the notch.

[0020] According to a reaction chamber structure provided in this application, at least one heat reflector plate overlaps on two adjacent support ridges.

[0021] According to a reaction chamber structure provided in this application, the supporting ridge has a supporting surface, and the supporting surface is provided with a groove, the groove being used to support the at least one heat reflector.

[0022] According to a reaction chamber structure provided in this application, the heat reflector is in the shape of a fan, a fan ring, or a combination of a fan and a fan ring.

[0023] According to a reaction chamber structure provided in this application, the heat reflector is a thin plate made of high-temperature resistant ceramic material.

[0024] According to the reaction chamber structure provided in this application, a plurality of support rods are also included, which surround the lifting column and are fixedly disposed below the notch ring.

[0025] According to a reaction chamber structure provided in this application, the plurality of support rods are disposed below the outer ring of the notch.

[0026] According to a reaction chamber structure provided in this application, the reaction chamber structure is configured such that: when the heating stage is located in the process position, the distance between the heating stage and the support rod is greater than the distance between the heating stage and the notched ring; when the heating stage is located in the initial position, the distance between the heating stage and the support rod is less than the distance between the heating stage and the notched ring, the support rod supports the notched ring, and the lifting pin lifts the wafer.

[0027] According to a reaction chamber structure provided in this application, the minimum width of the notch in the notched ring is greater than the cross-sectional diameter of the lifting column.

[0028] The reaction chamber structure provided in this application includes a spray head, a heating platform, a lifting column, and a heat reflector. The notched ring and heat reflector plate of the heat reflector are suspended directly below the heating platform by a lifting pin. The heat reflected by the heat reflector plate, which is set corresponding to the area to be heated on the heating platform, reflects the received heat to the corresponding area of ​​the heating platform, thereby improving the local temperature of the heating platform more flexibly and accurately, optimizing the uniformity of wafer film formation, and further reducing the overall power and electricity consumption of the equipment. In addition, the notched ring and heat reflector plate act as a counterweight for the lifting pin due to gravity, preventing the lifting pin from breaking.

[0029] Overview of the attached figures

[0030] The features and performance of this application are further described by the following embodiments and accompanying drawings.

[0031] To more clearly illustrate the technical solutions in this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 is a schematic diagram of the structure of the heat reflector provided in this application;

[0033] Figure 2 is a schematic diagram of a notched ring provided in this application;

[0034] Figure 3 is a schematic diagram of the shape of a limiting hole provided in this application;

[0035] Figure 4 is a schematic diagram of the heating table provided in this application;

[0036] Figure 5 is a side sectional view of the notched ring provided in this application;

[0037] Figure 6 is a schematic diagram of another notched ring provided in this application;

[0038] Figure 7 is a schematic diagram of the reaction chamber structure provided in this application under the process conditions;

[0039] Figure 8 is a schematic diagram of the reaction chamber structure provided in this application under the loading / unloading state.

[0040] Preferred embodiments of this application

[0041] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0042] Referring to Figures 1 to 6, embodiments of this application provide a heat reflector and a reaction cavity structure.

[0043] The heat reflector in this embodiment is disposed in the reaction chamber structure of the PECVD equipment.

[0044] Referring to Figures 1-2, the heat reflector 10 is positioned directly below the heating stage 20 in the reaction chamber structure. The heat reflector 10 includes a notched ring 101, multiple lifting pins 102, and at least one heat reflector plate 103. The notched ring 101 includes an inner notched ring 1011, an outer notched ring 1012 concentric with the inner notched ring 1011, and a connecting portion L connecting the inner notched ring 1011 and the outer notched ring 1012. A gap E exists between the inner notched ring 1011 and the outer notched ring 1012. The notched ring 101 is connected to the heating stage 20 via the multiple lifting pins 102. The heat reflector plate 103 overlaps the hollow space between the inner notched ring 1011 and the outer notched ring 1012, with its reflective surface facing upwards, reflecting the heat received from the heating stage 20 onto the area to be heated within the heating stage 20.

[0045] In some embodiments, since the heat reflector 103 needs to reflect heat to the corresponding area of ​​the heating stage 20, the reflector surface of the heat reflector 103 needs to have thermal reflectivity, and the weight of the heat reflector 103 should not be too heavy. Therefore, the material of the heat reflector 103 is a high-temperature resistant lightweight ceramic sheet, such as aluminum nitride ceramic (AlN) or alumina ceramic (Al2O3, Al1O3) or Al2O3.

[0046] It should be noted that during the process, the notched ring 101 and the heat reflector 103 are suspended directly below the heating table 20 by the lifting pin 102. The length of the lifting pin 102 minus the thickness of the heating table 20 and the thickness of the notched ring 101 is the heat reflection distance between the heat reflector 103 and the heating table 20. In some embodiments, the heat reflection distance can be achieved by adjusting the length of the lifting pin.

[0047] In some embodiments, in order to ensure that the area of ​​the heat reflector 103 that can compensate for the temperature of the heating stage 20 is large enough, the outer diameter of the notch outer ring 1012 of the notch ring 101 should be greater than or equal to the diameter of the heating area of ​​the heating stage 20.

[0048] Referring to Figures 2 and 3, one end of the lifting pin 102 is detachably and fixedly connected to a limiting hole 1021 provided on the notched outer ring 1012 via a snap-fit ​​structure. The number of limiting holes 1021 is greater than or equal to the number of lifting pins 102.

[0049] In some embodiments, the shape of the limiting hole 1021 can be a circular first limiting hole 1022 and a circular rectangular second limiting hole 1023 extending outward from one side of the first limiting hole 1022 by a certain length. The cross-sectional diameter of the snap-fit ​​structure should be smaller than the cross-sectional diameter of the first limiting hole 1022 and larger than the cross-sectional width of the second limiting hole 1023. The shapes of the first limiting hole 1022 and the second limiting hole 1023 are merely examples and are not limited here. It is only necessary to ensure that the snap-fit ​​structure is detachable within the first limiting hole 1022 and that the snap-fit ​​structure is fixed to the notch outer ring 1012 within the second limiting hole 1023.

[0050] The first limiting hole 1022 is the first region of the limiting hole 1021, and the second limiting hole 1023 is the second region of the limiting hole 1021. When the snap-fit ​​structure is located in the first region, since the cross-sectional diameter of the lifting pin 102 is smaller than the cross-sectional diameter of the first limiting hole 1022, the lifting pin 102 and the notched ring 101 are detachable, making it easy to remove the notched ring 101 from the lifting pin 102 to adjust the heat reflector 103. When the lifting pin 102 slides into the second region, the cross-sectional diameter of the snap-fit ​​structure is larger than the cross-sectional width of the second limiting hole. The snap-fit ​​structure fixes the lifting pin 102 and the notched ring 101 together, supporting the suspension of the notched ring and the heat reflector 103 below the heating stage 20 by the lifting pin 102. This ensures that the lifting pin 102 and the notched ring 101 will not separate during the process of the support rod 303 lifting the notched ring 101 upwards, and the lifting pin 102 lifts the wafer W from the heating stage 20.

[0051] Referring to Figure 4, the other end of the lifting pin 102 passes through the through hole of the heating platform 20 in the reaction chamber structure and is movably connected to the heating platform 20 through the fixedly connected baffle 1024, suspending the notched ring 101 and the heat reflector 103 directly below the heating platform 20.

[0052] The heating table 20 is provided with through holes corresponding to the number of lifting pins 102, allowing the lifting pins 102 to pass through. In some embodiments, in order to suspend the notched ring and the heat reflector plate below the heating table 20 by means of the lifting pins 102, the area of ​​the baffle 1024 should be greater than the cross-sectional area of ​​the through holes on the heating table 20.

[0053] Referring again to Figure 2, a heat reflector 103 is placed in the hollow space between the inner ring 1011 and the outer ring 1012 of the notch.

[0054] As shown in Figure 5, in some embodiments, to ensure the stability of the heat reflector 103 during the lifting and lowering process of the heating platform 20, the outer wall of the notched inner ring 1011 is provided with a first protrusion A protruding outward in the direction of the outer ring, while the inner wall of the notched outer ring 1012 is provided with a second protrusion B protruding in the direction of the inner ring. The first protrusion A has a first supporting surface, and the second protrusion B has a second supporting surface. The first supporting surface and the second supporting surface are on the same horizontal plane and jointly support the heat reflector. The first protrusion A and the second protrusion B can be a ring-shaped protrusion with a notch, or they can be one or more protrusions distributed on the outer wall of the notched inner ring 1011 and the outer wall of the notched outer ring 1012. Considering the uncertainty of the non-uniformity of the temperature difference in the heating platform 20 area, the first protrusion A and the second protrusion B are preferably a ring of protrusions protruding from the notched inner ring 1011 and the notched outer ring 1012, which facilitates the adjustment of the placement position of the heat reflector 103. The heat reflector 103 is placed on the supporting surface formed by the first protrusion A and the second protrusion B. The outer diameter of the second boss B should be greater than or equal to the diameter of the heating area of ​​the heating platform 20. In order to facilitate the placement of heat reflectors 103 of different radial lengths, in one embodiment, the second boss B has a certain width, and heat reflectors 103 of different lengths can be selected according to the radial length of the area to be compensated on the heating platform 20.

[0055] As shown in Figure 6, in another embodiment, the notched outer ring 1012 is a plurality of concentric notched rings with different outer diameters.

[0056] Referring also to Figure 6. In some embodiments, a plurality of support ribs 1013 are spaced apart in the hollow space between the inner notch ring 1011 and the outer notch ring 1012, with the two ends of each support rib 1013 connected to the inner notch ring 1011 and the outer notch ring 1012, respectively. In some embodiments, a heat reflector 103 is placed between two adjacent support ribs 1013, which can fix the heat reflector 103 and prevent it from sliding on the notch ring 101 during the lifting and lowering of the heating platform 20. Furthermore, the shape of the heat reflector 103 is not fixed and is set according to the area to be compensated on the heating platform 20. In addition, the heat reflector 103 can also overlap between the support ribs 1013 to achieve temperature compensation for the circumferentially distributed area to be compensated on the heating platform 20. To ensure the stability of the heat reflector 103 when placed circumferentially, grooves are formed on the supporting surfaces of the support ribs 1013 for placing and fixing the heat reflector 103. The heat reflector 103 is placed radially or circumferentially on the notched ring 101, flexibly meeting the temperature compensation requirements of different areas of the heating stage 20. Due to manufacturing tolerances of the heating stage 20 or environmental factors within the reaction chamber, the surface temperature of the heating stage 20 is uneven, with some areas being too high and others too low, thus affecting the film uniformity of the wafer W placed on the heating stage 20. After confirming the film formation results on the surface of the wafer W, the areas on the heating stage 20 that require temperature compensation are identified; the specific confirmation method is not limited here.

[0057] In some embodiments, after determining the area of ​​the heating stage 20 that requires temperature compensation, a heat reflector 103 is placed in the corresponding area of ​​the hollow position of the notched ring 101 directly below the heating stage 20. Since the hollow position of the notched ring 101 is an open ring, the shape of the heat reflector 103 is a polygon that can overlap the first annular boss A and the second annular boss B. For example, it can be a fan-shaped, fan-ring-shaped, or a combination of fan-shaped and fan-ring-shaped.

[0058] In some embodiments, the upper surface of the heat reflector 103, i.e., the reflective surface, has a reflectivity to heat, which can reflect the heat received from the heating stage 20 to the bottom of the heating stage 20 in a uniform manner. The temperature in this area of ​​the heating stage 20 can be compensated, further making the film formation in this area of ​​the wafer W more uniform. Therefore, the material of the heat reflector 103 should be a lightweight material that can withstand high temperatures and has a heat reflectivity on its upper surface. In some embodiments, it can be a ceramic sheet.

[0059] It should be noted that in some embodiments, since the lifting pin 102 is a thin cylindrical shape and is relatively light, it is easy for the lifting pin 102 to get stuck or break in the through hole of the heating table 20 during the rising and falling process. Therefore, the notched ring 101 connected to the lifting pin 102 and the heat reflector plate 103 placed in the hollow position can also play a counterweight role for the lifting pin 102 by gravity, so as to avoid damage to the lifting pin 102 during the process.

[0060] Considering the counterweight, since the heat reflector 103 has weight, the weight of the notch ring 101 should not be too heavy. If the notch ring 101 is a solid plate, the lifting pin 102 will break due to the excessive weight of the notch ring 101. Therefore, the inner notch ring and the outer notch ring of the notch ring 101 are hollow.

[0061] The heat reflector in the reaction chamber structure provided in this application embodiment includes a notched ring, multiple lifting pins, and a heat reflector plate placed on the notched ring. The notched ring and the heat reflector plate are suspended directly below the heating stage by the lifting pins. The heat reflector plate reflects the received heat to the corresponding area of ​​the heating stage, compensating for the heat of the heating stage in that area. This results in more flexible and precise uniformity of wafer film deposition, further reducing the overall power and electricity consumption of the equipment. In addition, the notched ring and the heat reflector plate act as counterweights for the lifting pins due to gravity, preventing the lifting pins from breaking.

[0062] Based on the same concept, referring to Figure 7, this application embodiment also provides a reaction chamber structure.

[0063] The reaction chamber structure 30 includes a spray plate 301; a heating stage 20 disposed below the spray plate 301, the space between the heating stage 20 and the spray plate forming a process space for thin film deposition on the wafer w within the reaction chamber structure 30. The heating stage 20 is used to place and heat the wafer w, and a lifting column 302 is fixedly connected to the center of the bottom of the heating stage 20 for driving the heating stage 20 to move up and down between the process position and the initial position; and the aforementioned heat reflector 10, which surrounds the lifting column 302 through the notch in the notched ring 101 of the heat reflector 10, and the notched ring 101 and the heat reflector 103 are suspended directly below the heating stage 20 by the lifting pin 102.

[0064] Since the notch ring 101 is arranged around the lifting column 302, and the notch ring 101 is removed and installed from the lifting column 302 through the notch, the minimum width of the notch of the notch ring 101 should be greater than the cross-sectional diameter of the lifting column 302, and the inner diameter of the inner ring 1011 of the notch should be greater than the cross-sectional diameter of the lifting column 302.

[0065] In some embodiments, the reaction chamber structure 30 further includes a plurality of support rods 303, which are fixed around the lifting column 302 and disposed directly below the notch ring 101, preferably disposed below the notch outer ring 1012, for supporting the notch ring 101.

[0066] In some embodiments, the heating table 20 is provided with a plurality of through holes, the number of which is the same as the number of lifting pins 102. The lifting pins 102 pass through the through holes and suspend the notched ring 101 directly below the heating table 20 through the baffle 1024.

[0067] Referring also to Figure 7. In one embodiment, the heating stage 20 is moved upwards to the process position above the reaction chamber structure 30 by the lifting column 302. At this time, the heating stage 20 is in the process state within the reaction chamber structure 30, and thin film deposition begins on the surface of the wafer w placed on the heating stage 20. When the heating stage 20 is in the process position, the distance between the heating stage 20 and the support rod 303 is greater than the distance between the heating stage 20 and the notched ring 101. The notched ring 101 is suspended directly below the heating stage 20 by the lifting pin 102.

[0068] During the process, the heating stage 20 is in a heated state. A heat reflector 103 overlaps at the corresponding position of the notch ring 101, reflecting the heat received from the heating stage 20 back to the corresponding area of ​​the heating stage 20. During this process, the distance between the heat reflector 103 and the heating stage 20 is fixed. Therefore, the heat reflected by the heat reflector 103 to the corresponding position of the heating stage 20 is also stable, which is beneficial for optimizing the uniformity of film formation on the wafer w surface. Furthermore, the notch ring 101 and the heat reflector 103 act as counterweights for the lifting pin 102 due to gravity, preventing the lifting pin 102 from breaking or getting stuck.

[0069] Referring to Figure 8, in another embodiment, after the process is completed, the lifting column 302 controls the heating stage 20 to begin falling back until it reaches the initial position below the reaction chamber structure 30, at which point the heating stage 20 is in its initial state. When the heating stage 20 falls back to the initial position, the distance between the heating stage 20 and the support rod 303 is less than the distance between the heating stage 20 and the notched ring 101. The notched ring 101 first contacts the support rod 303 at the bottom of the reaction chamber structure 30. The support rod 303 lifts the notched ring 101, causing the lifting pin 102 to move upward within the through hole inside the heating stage 20, lifting the wafer w and separating the wafer w from the heating stage 20, making it easier to remove the wafer w.

[0070] In the description of this application, it should be understood that the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0071] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0072] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0073] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A reaction chamber structure, characterized in that, include: Sprayer plate; A heating platform, located below the spray plate, is used to place the wafer, and the heating platform has a heating area; A lifting column is used to drive the heating stage to move up and down between the starting position and the process position. A heat reflector includes a notched ring, a plurality of lifting pins, and at least one heat reflector plate. The notched ring is suspended below the heating table by the plurality of lifting pins. The at least one heat reflector plate is disposed on the notched ring and is disposed opposite to the area to be heated, for reflecting the received heat to the heating table.

2. The reaction chamber structure according to claim 1, characterized in that, The notched ring includes an inner notched ring, an outer notched ring, and a connecting portion. The outer notched ring and the inner notched ring are concentrically arranged. The connecting portion is used to connect the inner notched ring and the outer notched ring. There is a gap between the inner notched ring and the outer notched ring.

3. The reaction chamber structure according to claim 2, characterized in that, The at least one heat reflector plate overlaps the inner ring of the notch and the outer ring of the notch.

4. The reaction chamber structure according to claim 2, characterized in that, The outer side wall of the inner ring of the notch is provided with a first protrusion, and the inner side wall of the outer ring of the notch is provided with a second protrusion. The first protrusion has a first supporting surface, and the second protrusion has a second supporting surface. The first supporting surface and the second supporting surface are located on the same horizontal plane and are used to jointly support the at least one heat reflector.

5. The reaction chamber structure according to claim 4, characterized in that, The first boss and / or the second boss are notched annular bosses.

6. The reaction chamber structure according to claim 5, characterized in that, The outer diameter of the second boss is larger than the diameter of the area to be heated.

7. The reaction chamber structure according to claim 2, characterized in that, The heating platform is provided with a baffle and a through hole. The through hole corresponds to the lifting pin. The first end of the lifting pin is detachably and fixedly connected to the outer ring of the notch through a snap-fit ​​structure. The second end of the lifting pin passes through the through hole and is movably connected to the heating platform through the baffle.

8. The reaction chamber structure according to claim 7, characterized in that, The outer ring of the notch is provided with a plurality of limiting holes, the number of limiting holes being greater than or equal to the number of lifting pins; the limiting holes include a first region and a second region, and when the snap-fit ​​structure is located in the first region, the lifting pins and the outer ring of the notch are detachable; When the snap-fit ​​structure is located in the second region, the lifting pin and the notch outer ring are fixedly connected.

9. The reaction chamber structure according to claim 7, characterized in that, The diameter of the baffle is larger than the cross-sectional diameter of the through hole.

10. The reaction chamber structure according to claim 2, characterized in that, The connecting portion consists of multiple support ridges disposed between the inner ring of the notch and the outer ring of the notch.

11. The reaction chamber structure according to claim 10, characterized in that, The at least one heat reflector overlaps on two adjacent support ridges.

12. The reaction chamber structure according to claim 11, characterized in that, The supporting ridge has a supporting surface, and the supporting surface has a groove for supporting the at least one heat reflector.

13. The reaction chamber structure according to claim 1, characterized in that, The heat reflector is in the shape of a fan, a fan ring, or a combination of a fan and a fan ring.

14. The reaction chamber structure according to claim 1, characterized in that, The heat reflector is a thin plate made of high-temperature resistant ceramic material.

15. The reaction chamber structure according to claim 2, characterized in that, It also includes multiple support rods that surround the lifting column and are fixedly disposed below the notch ring.

16. The reaction chamber structure according to claim 15, characterized in that, The plurality of support rods are positioned below the outer ring of the notch.

17. The reaction chamber structure according to claim 15, characterized in that, The reaction chamber structure is configured such that: when the heating stage is in the process position, the distance between the heating stage and the support rod is greater than the distance between the heating stage and the notched ring; when the heating stage is in the initial position, the distance between the heating stage and the support rod is less than the distance between the heating stage and the notched ring, the support rod supports the notched ring, and the lifting pin lifts the wafer.

18. The reaction chamber structure according to claim 1, characterized in that, The minimum width of the notch in the notched ring is greater than the cross-sectional diameter of the lifting column.

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