High-frequency module

Abstract

A high-frequency module (1) comprises: a module substrate (90) having main surfaces (90a, 90b) opposite of each other; a power amplifier (11) disposed on the main surface (90a); a resin member (96) covering at least a portion of the main surface (90b); a plurality of columnar conductors (92) disposed on the main surface (90b) and including columnar conductors (921, 922); a via conductor (911) disposed in the module substrate (90) and connecting the power amplifier (11) to the columnar conductor (921); and a cross connection conductor (931) embedded in the resin member (96) and connecting the columnar conductors (921, 922).

Description

High-frequency module

[0001] The present invention relates to a high-frequency module.

[0002] Patent Document 1 discloses a technique for improving heat dissipation by connecting a via conductor and a columnar electrode to a power amplifier.

[0003] Japanese Patent Application Laid-Open No. 2020-126921

[0004] However, in the above conventional technology, the heat dissipation of the power amplifier may not be sufficient.

[0005] Therefore, the present invention provides a high-frequency module capable of improving the heat dissipation of a power amplifier.

[0006] The high-frequency module according to one aspect of the present invention includes a module substrate having a first main surface and a second main surface facing each other, a first power amplifier disposed on the first main surface, a resin member covering at least a part of the second main surface, a plurality of columnar conductors disposed on the second main surface and including a first columnar conductor and a second columnar conductor, a first via conductor disposed in the module substrate and connecting the first power amplifier to the first columnar conductor, and a first cross-connection conductor embedded in the resin member and connecting between the first columnar conductor and the second columnar conductor.

[0007] According to the present invention, the heat dissipation of the power amplifier can be improved.

[0008] FIG. 1 is a configuration diagram of a communication device according to an embodiment. FIG. 2 is a circuit configuration diagram of a high-frequency module according to an embodiment. FIG. 3 is a plan view of a high-frequency module according to an embodiment. FIG. 4 is a plan view of a high-frequency module according to an embodiment. FIG. 5 is a cross-sectional view of a high-frequency module according to an embodiment. FIG. 6 is a cross-sectional view of a high-frequency module according to an embodiment. FIG. 7 is a cross-sectional view of a high-frequency module according to an embodiment. FIG. 8 is a plan view of a high-frequency module according to a modification of an embodiment. FIG. 9 is a plan view of a high-frequency module according to a modification of an embodiment. FIG. 10 is a cross-sectional view of a high-frequency module according to a modification of an embodiment.

[0009] The embodiments of the present invention will be described in detail below with reference to the drawings. Note that the embodiments described below are all general or specific examples. The numerical values, shapes, materials, components, arrangement of components, and connection configurations shown in the following embodiments are examples only and are not intended to limit the present invention.

[0010] The figures are schematic diagrams that have been appropriately emphasized, omitted, or had their proportions adjusted to illustrate the present invention, and are not necessarily strictly accurate representations. Actual shapes, positional relationships, and proportions may differ. In each figure, substantially identical components are denoted by the same reference numerals, and redundant explanations may be omitted or simplified.

[0011] In the following figures, the x and y axes are mutually orthogonal axes on a plane parallel to the main surface of the module substrate or semiconductor integrated component. The z axis is perpendicular to the main surface of the module substrate, with its positive direction indicating upwards and its negative direction indicating downwards.

[0012] In the following explanation, "connected" includes not only direct connections via terminals and / or wiring conductors, but also electrical connections via other circuit elements. "A is switchably connected to B" means that the connection and disconnection between A and B are switchable, and that A is connected to B via a switch. Note that "A is connected to B" includes "A is switchably connected to B".

[0013] "C is connected between A and B" means that one end of C is connected to A and the other end of C is connected to B, meaning that C is in series connection to the path between A and B. "C is connected between the path between A and B and ground" means that one end of C is connected to the path between A and B and the other end of C is connected to ground, meaning that C is in shunt connection to the path between A and B. "The path between A and B" means a path composed of conductors that electrically connect A to B.

[0014] The "passband of a filter" is the portion of the frequency spectrum transmitted by the filter, and is defined as the frequency band between two frequencies that are 3 dB greater than the minimum power insertion loss.

[0015] "Transmitting band" refers to the frequency band used for transmission in a communication device, while "receiving band" refers to the frequency band used for reception in a communication device. For example, in an FDD (Frequency Division Duplex) band, different frequency bands (uplink band and downlink band) are used as the transmitting and receiving bands. In contrast, in a TDD band, the same frequency band is used for both the transmitting and receiving bands.

[0016] A "terminal" refers to the point where a conductor within an element terminates. However, if the impedance of the conductors between elements is sufficiently low, a terminal can be interpreted not only as a single point, but as any point on the conductor between elements, or even the entire conductor.

[0017] "A component is placed on a substrate" includes a component being placed on the main surface of the substrate, and a component being placed within the substrate. "A component is placed on the main surface of the substrate" includes a component being placed in contact with the main surface of the substrate, as well as a component being placed above the main surface without contact with it (for example, a component being stacked on top of another component placed in contact with the main surface). Furthermore, "a component is placed on the main surface of the substrate" may also include a component being placed in a recess formed in the main surface. "A component is placed within the substrate" includes a component being encapsulated within the substrate, as well as a component being entirely placed between the two main surfaces of the substrate but with part of the component not covered by the substrate, and a component being placed within the substrate only.

[0018] "The part is embedded within the resin component" means that the part is enclosed within the resin component. In other words, "the part is embedded within the resin component" means that the part is completely housed inside the resin component so that it is not exposed to the outside of the resin component.

[0019] "A is located between B and C" means that at least one of the line segments connecting any point in B and any point in C passes through A. "A is located further from C than B" means that the distance between A and C is greater than the distance between B and C. Here, "the distance between A(B) and C" means the length of the shortest line segment (i.e., the shortest distance) among the line segments connecting any point on the surface of A(B) and any point on the surface of C.

[0020] "Plan view of a module substrate or semiconductor integrated component" means viewing an object by orthogonally projecting it onto the xy-plane in the negative z-axis direction. "In a plan view of a module substrate or semiconductor integrated component, A overlaps with B" means that the region of A projected onto the xy-plane overlaps with the region of B projected onto the xy-plane.

[0021] Furthermore, terms indicating relationships between elements, such as "parallel" and "perpendicular," and terms indicating the shape of elements, such as "rectangle," as well as numerical ranges, do not represent only strict meanings but also include substantially equivalent ranges, such as errors of a few percent.

[0022] (Embodiments) Embodiments will be described below.

[0023] [1.1. Configuration of the Communication Device] First, the configuration of the communication device 5 according to this embodiment will be described with reference to Figure 1. Figure 1 is a configuration diagram of the communication device 5 according to this embodiment.

[0024] Figure 1 shows an exemplary configuration, and the communication device 5 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the communication device 5 provided below should not be interpreted as restrictive.

[0025] The communication device 5 can be used to provide wireless connectivity. For example, the communication device 5 can be implemented in a UE (User Equipment) on a cellular network (also called a mobile network) such as a mobile phone, smartphone, tablet computer, or wearable device. In another example, by implementing the communication device 5, wireless connectivity can be provided to IoT (Internet of Things) sensor devices, medical / healthcare devices, cars, unmanned aerial vehicles (UAVs) (so-called drones), and automated guided vehicles (AGVs). In yet another example, by implementing the communication device 5, wireless connectivity can also be provided in a wireless access point or wireless hotspot.

[0026] The communication device 5 comprises a high-frequency module 1, antennas 2a, 2b, and 2c, an RFIC (Radio Frequency Integrated Circuit) 3, and a BBIC (Baseband Integrated Circuit) 4.

[0027] The high-frequency module 1 can transmit high-frequency signals between antennas 2a to 2c and RFIC 3. The circuit configuration of the high-frequency module 1 will be described later with reference to Figure 2.

[0028] Antennas 2a to 2c are connected to the high-frequency module 1. Antennas 2a to 2c can receive high-frequency signals from the high-frequency module 1 and transmit them to the outside of the communication device 5. Furthermore, antennas 2a to 2c can receive high-frequency signals from outside the communication device 5 and supply them to the high-frequency module 1. Note that some or all of antennas 2a to 2c do not need to be included in the communication device 5. In addition, the communication device 5 may be equipped with one or more antennas in addition to antennas 2a to 2c.

[0029] RFIC3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, RFIC3 can process the transmission signal input from BBIC4 by upconversion or the like, and output the high-frequency transmission signal generated by this signal processing to high-frequency module 1. Furthermore, RFIC3 can also process the high-frequency reception signal input via high-frequency module 1 by downconversion or the like, and output the reception signal generated by this signal processing to BBIC4. RFIC3 may also have a control unit that controls switches and amplifiers, etc., of the high-frequency module 1. Note that some or all of the control unit functions of RFIC3 may be included outside of RFIC3, for example, in BBIC4 and / or high-frequency module 1.

[0030] BBIC4 is a baseband signal processing circuit that processes signals using a frequency band lower than the high-frequency signal transmitted by the high-frequency module 1. Examples of signals processed by BBIC4 include image signals for image display and / or voice signals for communication via a speaker. Note that BBIC4 does not necessarily have to be included in the communication device 5.

[0031] [1.2. Circuit Configuration of High-Frequency Module 1] Next, the circuit configuration of the high-frequency module 1 according to this embodiment will be described with reference to Figure 2. Figure 2 is a circuit diagram of the high-frequency module 1 according to this embodiment.

[0032] Figure 2 shows an exemplary circuit configuration, and the high-frequency module 1 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as restrictive.

[0033] The high-frequency module 1 includes power amplifiers 11, 12, and 13, capacitors C11, C12, and C13, inductors L11, L12, and L13, low-noise amplifiers 21, 22, and 23, transmit / receive filters 31 and 32, duplexers 33, 34, 35, and 36, transmit filters 37 and 38, matching circuits 41, 42, and 43, switch circuits 51, 52, 53, 61, 62, 63, 71, 72, and 81, antenna connection terminals 101, 102, and 103, high-frequency input terminals 111, 112, and 113, high-frequency output terminals 121, 122, and 123, digital control terminal 131, and power supply voltage terminals 141, 142, and 143.

[0034] Antenna connection terminals 101 to 103 are external connection terminals of the high-frequency module 1. Antenna connection terminals 101 to 103 are connected to antennas 2a to 2c outside the high-frequency module 1, and are connected to switch circuits 51 to 53 inside the high-frequency module 1, respectively.

[0035] The high-frequency input terminals 111 to 113 are external connection terminals of the high-frequency module 1 and are terminals for receiving high-frequency signals from the RFIC 3. The high-frequency input terminals 111 to 113 are connected to the RFIC 3 outside the high-frequency module 1 and are connected to the power amplifiers 11 to 13 inside the high-frequency module 1, respectively.

[0036] The high-frequency output terminals 121 to 123 are external connection terminals of the high-frequency module 1 and are terminals for supplying high-frequency signals to the RFIC 3. The high-frequency output terminals 121 to 123 are connected to the RFIC 3 outside the high-frequency module 1 and are connected to the low-noise amplifiers 21 to 23 inside the high-frequency module 1, respectively.

[0037] The digital control terminal 131 is an external connection terminal of the high-frequency module 1 and is a terminal for receiving digital control signals from the RFIC 3. The digital control terminal 131 is connected to the RFIC 3 outside the high-frequency module 1 and to the PA control circuit 82 inside the high-frequency module 1. In this embodiment, a source-synchronous serial data signal is used as the digital control signal. Alternatively, a clock-embedded serial data signal may be used as the digital control signal.

[0038] The power supply voltage terminals 141 to 143 are external connection terminals of the high-frequency module 1 and are terminals for receiving power supply voltage from a DC power supply (not shown). The power supply voltage terminals 141 to 143 are connected to a DC power supply outside the high-frequency module 1 and are connected to power amplifiers 11 to 13 inside the high-frequency module 1, respectively.

[0039] The power amplifier 11 is an example of a first power amplifier and is connected between the high-frequency input terminal 111 and the matching circuit 41. Specifically, the input terminal of the power amplifier 11 is connected to the high-frequency input terminal 111, and the output terminal of the power amplifier 11 is connected to the matching circuit 41 and the power supply voltage terminal 141. The power amplifier 11 can amplify the transmitted signals of bands A and B using power supplied from a DC power supply (not shown) via the power supply voltage terminal 141.

[0040] The power amplifier 12 is an example of a second power amplifier and is connected between the high-frequency input terminal 112 and the matching circuit 42. Specifically, the input terminal of the power amplifier 12 is connected to the high-frequency input terminal 112, and the output terminal of the power amplifier 12 is connected to the matching circuit 42 and the power supply voltage terminal 142. The power amplifier 12 can amplify the transmitted signals of bands C, D, and G using power supplied from a DC power supply (not shown) via the power supply voltage terminal 142. Note that the power amplifier 12 does not necessarily have to be included in the high-frequency module 1.

[0041] The power amplifier 13 is connected between the high-frequency input terminal 113 and the matching circuit 43. Specifically, the input end of the power amplifier 13 is connected to the high-frequency input terminal 113, and the output end of the power amplifier 13 is connected to the matching circuit 43 and the power supply voltage terminal 143. The power amplifier 13 can amplify the transmission signals in bands E, F, and H using the power supplied from a DC power supply (not shown) via the power supply voltage terminal 143. Note that the power amplifier 13 may not be included in the high-frequency module 1.

[0042] In the present embodiment, each of the power amplifiers 11 to 13 is a multi-stage amplifier. Note that the power amplifiers 11 to 13 may be differential amplification type amplifiers that amplify two high-frequency signals having a phase difference of 180 degrees from each other, or may be balanced type amplifiers that amplify two high-frequency signals having a phase difference of 90 degrees from each other. Further, for example, the power amplifiers 11 to 13 may be Doherty amplifiers.

[0043] The capacitor C11 is connected between the path connecting the output end of the power amplifier 11 and the power supply voltage terminal 141 and the ground. Specifically, one of the two electrodes of the capacitor C11 is connected to the path connecting the output end of the power amplifier 11 and the power supply voltage terminal 141, and the other of the two electrodes of the capacitor C11 is connected to the ground. Note that the capacitor C11 may not be included in the high-frequency module 1.

[0044] The capacitor C12 is connected between the path connecting the output end of the power amplifier 12 and the power supply voltage terminal 142 and the ground. Specifically, one of the two electrodes of the capacitor C12 is connected to the path connecting the output end of the power amplifier 12 and the power supply voltage terminal 142, and the other of the two electrodes of the capacitor C12 is connected to the ground. Note that the capacitor C12 may not be included in the high-frequency module 1.

[0045] The capacitor C13 is connected between the path connecting the output terminal of the power amplifier 13 and the power supply voltage terminal 143 and the ground. Specifically, one of the two electrodes of the capacitor C13 is connected to the path connecting the output terminal of the power amplifier 13 and the power supply voltage terminal 143, and the other of the two electrodes of the capacitor C13 is connected to the ground. Note that the capacitor C13 may not be included in the high-frequency module 1.

[0046] The inductor L11 is connected between the output terminal of the power amplifier 11 and the power supply voltage terminal 141. Specifically, one end of the inductor L11 is connected to the output terminal of the power amplifier 11, and the other end of the inductor L11 is connected to the power supply voltage terminal 141. Note that the inductor L11 may not be included in the high-frequency module 1.

[0047] The inductor L12 is connected between the output terminal of the power amplifier 12 and the power supply voltage terminal 142. Specifically, one end of the inductor L12 is connected to the output terminal of the power amplifier 12, and the other end of the inductor L12 is connected to the power supply voltage terminal 142. Note that the inductor L12 may not be included in the high-frequency module 1.

[0048] The inductor L13 is connected between the output terminal of the power amplifier 13 and the power supply voltage terminal 143. Specifically, one end of the inductor L13 is connected to the output terminal of the power amplifier 13, and the other end of the inductor L13 is connected to the power supply voltage terminal 143. Note that the inductor L13 may not be included in the high-frequency module 1.

[0049] The low-noise amplifier 21 is connected between the switch circuit 61 and the high-frequency output terminal 121. Specifically, the input terminal of the low-noise amplifier 21 is connected to the switch circuit 61, and the output terminal of the low-noise amplifier 21 is connected to the high-frequency output terminal 121. The low-noise amplifier 21 can amplify the received signals in bands A and B using the power supplied from a DC power supply (not shown). Note that the low-noise amplifier 21 may not be included in the high-frequency module 1.

[0050] The low-noise amplifier 22 is connected between the switch circuit 71 and the high-frequency output terminal 122. Specifically, the input terminal of the low-noise amplifier 22 is connected to the switch circuit 71, and the output terminal of the low-noise amplifier 22 is connected to the high-frequency output terminal 122. The low-noise amplifier 22 can amplify the received signals of bands C and D using power supplied from a DC power supply (not shown). Note that the low-noise amplifier 22 does not necessarily have to be included in the high-frequency module 1.

[0051] The low-noise amplifier 23 is connected between the switch circuit 72 and the high-frequency output terminal 123. Specifically, the input terminal of the low-noise amplifier 23 is connected to the switch circuit 72, and the output terminal of the low-noise amplifier 23 is connected to the high-frequency output terminal 123. The low-noise amplifier 23 can amplify the received signals of bands E and F using power supplied from a DC power supply (not shown). Note that the low-noise amplifier 23 does not necessarily have to be included in the high-frequency module 1.

[0052] The transmit / receive filter 31 is connected between the antenna connection terminal 101 and the power amplifier 11 and the low-noise amplifier 21. Specifically, one end of the transmit / receive filter 31 is connected to the selection terminal 511 of the switch circuit 51, and the other end of the transmit / receive filter 31 is connected to the selection terminal 611 of the switch circuit 61. The transmit / receive filter 31 is a bandpass filter having a passband that includes the transmit band and receive band (A-TRx) of band A, and can pass signals within the transmit band and receive band of band A, and attenuate signals outside the transmit band and receive band of band A. Note that the transmit / receive filter 31 is not limited to a bandpass filter. For example, the transmit / receive filter 31 may be a band elimination filter, a high-pass filter, a low-pass filter, or any combination thereof. Also, the transmit / receive filter 31 does not have to be included in the high-frequency module 1.

[0053] The transmit / receive filter 32 is connected between the antenna connection terminal 101 and the power amplifier 11 and the low-noise amplifier 21. Specifically, one end of the transmit / receive filter 32 is connected to the selection terminal 512 of the switch circuit 51, and the other end of the transmit / receive filter 32 is connected to the selection terminal 612 of the switch circuit 61. The transmit / receive filter 32 is a bandpass filter having a passband that includes the transmit band and receive band (B-TRx) of band B, and can pass signals within the transmit band and receive band of band B, and attenuate signals outside the transmit band and receive band of band B. Note that the transmit / receive filter 32 is not limited to a bandpass filter. For example, the transmit / receive filter 32 may be a band elimination filter, a high-pass filter, a low-pass filter, or any combination thereof. Also, the transmit / receive filter 32 does not have to be included in the high-frequency module 1.

[0054] The duplexer 33 is connected between the antenna connection terminal 102 and the power amplifier 12 and the low-noise amplifier 22. The duplexer 33 includes a transmit filter 331 and a receive filter 332, which can separate the transmit and receive signals of band C.

[0055] The transmit filter 331 is connected between the antenna connection terminal 102 and the power amplifier 12. Specifically, one end of the transmit filter 331 is connected to the select terminal 521 of the switch circuit 52, and the other end of the transmit filter 331 is connected to the select terminal 621 of the switch circuit 62. The transmit filter 331 is a bandpass filter having a passband that includes the transmit bandwidth (C-Tx) of band C, and can pass signals within the transmit bandwidth of band C and attenuate signals outside the transmit bandwidth of band C. Note that the transmit filter 331 is not limited to a bandpass filter. For example, the transmit filter 331 may be a band elimination filter, a high-pass filter, a low-pass filter, or any combination thereof. Also, the transmit filter 331 does not have to be included in the high-frequency module 1.

[0056] The receiving filter 332 is connected between the antenna connection terminal 102 and the low-noise amplifier 22. Specifically, one end of the receiving filter 332 is connected to the select terminal 521 of the switch circuit 52, and the other end of the receiving filter 332 is connected to the select terminal 711 of the switch circuit 71. The receiving filter 332 is a bandpass filter having a passband that includes the receiving band (C-Rx) of band C, and can pass signals within the receiving band of band C and attenuate signals outside the receiving band of band C. Note that the receiving filter 332 is not limited to a bandpass filter. For example, the receiving filter 332 may be a band-elimination filter, a high-pass filter, a low-pass filter, or any combination thereof. Also, the receiving filter 332 does not have to be included in the high-frequency module 1.

[0057] The duplexer 34 is connected between the antenna connection terminal 102 and the power amplifier 12 and the low-noise amplifier 22. The duplexer 34 includes a transmit filter 341 and a receive filter 342, which can separate the transmit and receive signals of band D.

[0058] The transmit filter 341 is connected between the antenna connection terminal 102 and the power amplifier 12. Specifically, one end of the transmit filter 341 is connected to the selection terminal 522 of the switch circuit 52, and the other end of the transmit filter 341 is connected to the selection terminal 622 of the switch circuit 62. The transmit filter 341 is a bandpass filter having a passband that includes the transmit bandwidth (D-Tx) of band D, and can pass signals within the transmit bandwidth of band D and attenuate signals outside the transmit bandwidth of band D. Note that the transmit filter 341 is not limited to a bandpass filter. For example, the transmit filter 341 may be a band elimination filter, a high-pass filter, a low-pass filter, or any combination thereof. Also, the transmit filter 341 does not have to be included in the high-frequency module 1.

[0059] The receiving filter 342 is connected between the antenna connection terminal 102 and the low-noise amplifier 22. Specifically, one end of the receiving filter 342 is connected to the select terminal 522 of the switch circuit 52, and the other end of the receiving filter 342 is connected to the select terminal 712 of the switch circuit 71. The receiving filter 342 is a bandpass filter having a passband that includes the receiving band (D-Rx) of band D, and can pass signals within the receiving band of band D and attenuate signals outside the receiving band of band D. Note that the receiving filter 342 is not limited to a bandpass filter. For example, the receiving filter 342 may be a band-elimination filter, a high-pass filter, a low-pass filter, or any combination thereof. Also, the receiving filter 342 does not have to be included in the high-frequency module 1.

[0060] The duplexer 35 is connected between the antenna connection terminal 103 and the power amplifier 13 and the low-noise amplifier 23. The duplexer 35 includes a transmit filter 351 and a receive filter 352, which can separate the transmit and receive signals of band E.

[0061] The transmit filter 351 is connected between the antenna connection terminal 103 and the power amplifier 13. Specifically, one end of the transmit filter 351 is connected to the select terminal 531 of the switch circuit 53, and the other end of the transmit filter 351 is connected to the select terminal 631 of the switch circuit 63. The transmit filter 351 is a bandpass filter having a passband that includes the transmit bandwidth (E-Tx) of band E, and can pass signals within the transmit bandwidth of band E and attenuate signals outside the transmit bandwidth of band E. Note that the transmit filter 351 is not limited to a bandpass filter. For example, the transmit filter 351 may be a band elimination filter, a high-pass filter, a low-pass filter, or any combination thereof. Also, the transmit filter 351 does not have to be included in the high-frequency module 1.

[0062] The receiving filter 352 is connected between the antenna connection terminal 103 and the low-noise amplifier 23. Specifically, one end of the receiving filter 352 is connected to the select terminal 531 of the switch circuit 53, and the other end of the receiving filter 352 is connected to the select terminal 721 of the switch circuit 72. The receiving filter 352 is a bandpass filter having a passband that includes the receiving band (E-Rx) of band E, and can pass signals within the receiving band of band E and attenuate signals outside the receiving band of band E. Note that the receiving filter 352 is not limited to a bandpass filter. For example, the receiving filter 352 may be a band-elimination filter, a high-pass filter, a low-pass filter, or any combination thereof. Also, the receiving filter 352 does not have to be included in the high-frequency module 1.

[0063] The duplexer 36 is connected between the antenna connection terminal 103 and the power amplifier 13 and the low-noise amplifier 23. The duplexer 36 includes a transmit filter 361 and a receive filter 362, which can separate the transmit and receive signals of band F.

[0064] The transmit filter 361 is connected between the antenna connection terminal 103 and the power amplifier 13. Specifically, one end of the transmit filter 361 is connected to the selection terminal 532 of the switch circuit 53, and the other end of the transmit filter 361 is connected to the selection terminal 632 of the switch circuit 63. The transmit filter 361 is a bandpass filter having a passband that includes the transmission bandwidth (F-Tx) of band F, and can pass signals within the transmission bandwidth of band F and attenuate signals outside the transmission bandwidth of band F. Note that the transmit filter 361 is not limited to a bandpass filter. For example, the transmit filter 361 may be a band elimination filter, a high-pass filter, a low-pass filter, or any combination thereof. Also, the transmit filter 361 does not have to be included in the high-frequency module 1.

[0065] The receiving filter 362 is connected between the antenna connection terminal 103 and the low-noise amplifier 23. Specifically, one end of the receiving filter 362 is connected to the select terminal 532 of the switch circuit 53, and the other end of the receiving filter 362 is connected to the select terminal 722 of the switch circuit 72. The receiving filter 362 is a bandpass filter having a passband that includes the receiving band (F-Rx) of band F, and can pass signals within the receiving band of band F and attenuate signals outside the receiving band of band F. Note that the receiving filter 362 is not limited to a bandpass filter. For example, the receiving filter 362 may be a band-elimination filter, a high-pass filter, a low-pass filter, or any combination thereof. Also, the receiving filter 362 does not have to be included in the high-frequency module 1.

[0066] The transmit filter 37 is connected between the antenna connection terminal 102 and the power amplifier 12. Specifically, one end of the transmit filter 37 is connected to the select terminal 523 of the switch circuit 52, and the other end of the transmit filter 37 is connected to the select terminal 623 of the switch circuit 62. The transmit filter 37 is a low-pass filter having a passband that includes the transmit bandwidth (G-Tx) of band G, and can pass signals within the transmit bandwidth of band G and attenuate signals outside the transmit bandwidth of band G. Note that the transmit filter 37 is not limited to a low-pass filter. For example, the transmit filter 37 may be a band-pass filter, a band-elimination filter, a high-pass filter, or any combination thereof. Also, the transmit filter 37 does not have to be included in the high-frequency module 1.

[0067] The transmit filter 38 is connected between the antenna connection terminal 103 and the power amplifier 13. Specifically, one end of the transmit filter 38 is connected to the select terminal 533 of the switch circuit 53, and the other end of the transmit filter 38 is connected to the select terminal 633 of the switch circuit 63. The transmit filter 38 is a low-pass filter having a passband that includes the transmit bandwidth (H-Tx) of band H, and can pass signals within the transmit bandwidth of band H and attenuate signals outside the transmit bandwidth of band H. Note that the transmit filter 38 is not limited to a low-pass filter. For example, the transmit filter 38 may be a band-pass filter, a band-elimination filter, a high-pass filter, or any combination thereof. Also, the transmit filter 38 does not have to be included in the high-frequency module 1.

[0068] The matching circuit (matching network) 41 is connected between the power amplifier 11 and the transmit / receive filters 31 and 32. Specifically, one end of the matching circuit 41 is connected to the power amplifier 11, and the other end of the matching circuit 41 is connected to the transmit / receive filters 31 and 32 via a switch circuit 61. The matching circuit 41 may include an inductor and / or a capacitor. The matching circuit 41 can achieve impedance matching between the power amplifier 11 and the transmit / receive filters 31 and 32. Note that the matching circuit 41 does not necessarily have to be included in the high-frequency module 1.

[0069] The matching circuit (matching network) 42 is connected between the power amplifier 12 and the transmitting filters 331, 341, and 37. Specifically, one end of the matching circuit 42 is connected to the power amplifier 12, and the other end of the matching circuit 42 is connected to the transmitting filters 331, 341, and 37 via the switching circuit 62. The matching circuit 42 may include an inductor and / or a capacitor. The matching circuit 42 can achieve impedance matching between the power amplifier 12 and the transmitting filters 331, 341, and 37. Note that the matching circuit 42 does not necessarily have to be included in the high-frequency module 1.

[0070] The matching circuit (matching network) 43 is connected between the power amplifier 13 and the transmit filters 351, 361, and 38. Specifically, one end of the matching circuit 43 is connected to the power amplifier 13, and the other end of the matching circuit 43 is connected to the transmit filters 351, 361, and 38 via the switch circuit 63. The matching circuit 43 may include an inductor and / or a capacitor. The matching circuit 43 can achieve impedance matching between the power amplifier 13 and the transmit filters 351, 361, and 38. Note that the matching circuit 43 does not necessarily have to be included in the high-frequency module 1.

[0071] The switch circuit 51 is connected between the antenna connection terminal 101 and the transmit / receive filters 31 and 32. The switch circuit 51 includes a common terminal 510 and select terminals 511 and 512. The common terminal 510 is connected to the antenna connection terminal 101. The select terminal 511 is connected to the transmit / receive filter 31. The select terminal 512 is connected to the transmit / receive filter 32. In this connection configuration, the switch circuit 51 can selectively connect the common terminal 510 to the select terminals 511 and 512 based, for example, on a digital control signal from the RFIC 3. The switch circuit 51 is composed of, for example, an SPDT (Single-Pole Double-Throw) type switch circuit. Note that the switch circuit 51 does not necessarily have to be included in the high-frequency module 1.

[0072] The switch circuit 52 is connected between the antenna connection terminal 102 and the duplexers 33 and 34 and the transmit filter 37. The switch circuit 52 includes a common terminal 520 and select terminals 521, 522, and 523. The common terminal 520 is connected to the antenna connection terminal 102. Select terminal 521 is connected to the duplexer 33. Select terminal 522 is connected to the duplexer 34. Select terminal 523 is connected to the transmit filter 37. In this connection configuration, the switch circuit 52 can selectively connect the common terminal 520 to the select terminals 521 to 523, for example, based on a digital control signal from the RFIC 3. The switch circuit 52 is composed of, for example, an SP3T (Single-Pole Triple-Throw) type switch circuit. Note that the switch circuit 52 does not necessarily have to be included in the high-frequency module 1.

[0073] The switch circuit 53 is connected between the antenna connection terminal 103 and the duplexers 35 and 36 and the transmit filter 38. The switch circuit 53 includes a common terminal 530 and select terminals 531, 532, and 533. The common terminal 530 is connected to the antenna connection terminal 103. Select terminal 531 is connected to the duplexer 35. Select terminal 532 is connected to the duplexer 36. Select terminal 533 is connected to the transmit filter 38. In this connection configuration, the switch circuit 53 can selectively connect the common terminal 530 to select terminals 531 to 533 based, for example, on a digital control signal from the RFIC 3. The switch circuit 53 is composed of, for example, an SP3T type switch circuit. Note that the switch circuit 53 does not necessarily have to be included in the high-frequency module 1.

[0074] The switch circuit 61 is connected between the power amplifier 11 and the low-noise amplifier 21 and the transmit / receive filters 31 and 32. The switch circuit 61 includes common terminals 610 and 613 and select terminals 611 and 612. Common terminal 610 is connected to the power amplifier 11. Common terminal 613 is connected to the low-noise amplifier 21. Select terminal 611 is connected to the transmit / receive filter 31. Select terminal 612 is connected to the transmit / receive filter 32. In this connection configuration, the switch circuit 61 can selectively connect common terminal 610 to select terminals 611 and 612, and common terminal 613 to select terminals 611 and 612, for example, based on a digital control signal from RFIC 3. Conversely, the switch circuit 61 can selectively connect select terminal 611 to common terminals 610 and 613, and select terminal 612 to common terminals 610 and 613. The switch circuit 61 is composed of, for example, a DPDT (Double-Pole Double-Throw) type switch circuit. Note that the switch circuit 61 does not necessarily have to be included in the high-frequency module 1.

[0075] The switch circuit 62 is connected between the power amplifier 12 and the transmit filters 331, 341, and 37. The switch circuit 62 includes a common terminal 620 and select terminals 621, 622, and 623. The common terminal 620 is connected to the power amplifier 12 via the matching circuit 42. Select terminal 621 is connected to the transmit filter 331. Select terminal 622 is connected to the transmit filter 341. Note that select terminal 622 does not necessarily have to be included in the switch circuit 62. Select terminal 623 is connected to the transmit filter 37. In this connection configuration, the switch circuit 62 can selectively connect the common terminal 620 to select terminals 621 to 623 based, for example, on a digital control signal from the RFIC 3. The switch circuit 62 is composed of, for example, an SP3T type switch circuit. Note that the switch circuit 62 does not necessarily have to be included in the high-frequency module 1.

[0076] The switch circuit 63 is connected between the power amplifier 13 and the transmit filters 351, 361, and 38. The switch circuit 63 includes a common terminal 630 and select terminals 631, 632, and 633. The common terminal 630 is connected to the power amplifier 13 via the matching circuit 43. Select terminal 631 is connected to the transmit filter 351. Select terminal 632 is connected to the transmit filter 361. Select terminal 633 is connected to the transmit filter 38. In this connection configuration, the switch circuit 63 can selectively connect the common terminal 630 to the select terminals 631 to 633 based, for example, on a digital control signal from the RFIC 3. The switch circuit 63 is composed of, for example, an SP3T type switch circuit. Note that the switch circuit 63 does not necessarily have to be included in the high-frequency module 1.

[0077] The switch circuit 71 is connected between the low-noise amplifier 22 and the receiving filters 332 and 342. The switch circuit 71 includes a common terminal 710 and select terminals 711 and 712. The common terminal 710 is connected to the low-noise amplifier 22. The select terminal 711 is connected to the receiving filter 332. The select terminal 712 is connected to the receiving filter 342. In this connection configuration, the switch circuit 71 can selectively connect the common terminal 710 to the select terminals 711 and 712 based, for example, on a digital control signal from the RFIC 3. The switch circuit 71 is composed of, for example, an SPDT type switch circuit. Note that the switch circuit 71 does not necessarily have to be included in the high-frequency module 1.

[0078] The switch circuit 72 is connected between the low-noise amplifier 23 and the receiving filters 352 and 362. The switch circuit 72 includes a common terminal 720 and select terminals 721 and 722. The common terminal 720 is connected to the low-noise amplifier 23. The select terminal 721 is connected to the receiving filter 352. The select terminal 722 is connected to the receiving filter 362. In this connection configuration, the switch circuit 72 can selectively connect the common terminal 720 to the select terminals 721 and 722 based, for example, on a digital control signal from the RFIC 3. The switch circuit 72 is composed of, for example, an SPDT type switch circuit. Note that the switch circuit 72 does not necessarily have to be included in the high-frequency module 1.

[0079] The switch circuit 81 is connected between the high-frequency input terminals 111-113 and the power amplifiers 11-13. The switch circuit 81 includes common terminals 811, 812, and 813 and select terminals 814, 815, and 816. The common terminals 811-813 are connected to the high-frequency input terminals 111-113, respectively. The select terminals 814-816 are connected to the power amplifiers 11-13, respectively. In this connection configuration, the switch circuit 81 can selectively connect the common terminal 811 to the select terminals 814 and 815, switch the connection and disconnection of the common terminal 812 to the select terminal 815, and switch the connection and disconnection of the common terminal 813 to the select terminal 816, for example, based on a digital control signal from the RFIC 3. The switch circuit 81 is composed of, for example, one SPDT type switch circuit and two SPST type switch circuits. Note that the switch circuit 81 does not necessarily have to be included in the high-frequency module 1.

[0080] [1.3. Frequency Bands] Next, the frequency bands according to this embodiment will be described. Bands A to H are frequency bands for communication systems constructed using Radio Access Technology (RAT). Bands A to H are predefined by standardization organizations (for example, 3GPP (registered trademark) (3rd Generation Partnership Project) and IEEE (Institute of Electrical and Electronics Engineers), etc.). Examples of communication systems include 5GNR (5th Generation New Radio) systems, 4GLTE (4th Generation Long Term Evolution) systems, and 2GGSM (2nd Generation Global System for Mobile communications).

[0081] Bands A and B are distinct TDD bands included in the High Band Group (HB). The High Band Group refers to a frequency range that includes multiple frequency bands for 4GLTE and / or 5GNR. The High Band Group is defined as a frequency range of 2300 to 2690 MHz. Bands A and B can be either 4GLTE bands or 5GNR bands; for example, any two of Bands 40 and 41 for 4GLTE and n40 and n41 for 5GNR can be used. However, Bands A and B are not limited to these frequency bands. Bands A and / or B may also be FDD bands. In this case, the transmit / receive filters 31 and / or 32 may be replaced with duplexers.

[0082] Bands C, D, and G are distinct FDD bands included in the Midband Group (MB). The Midband Group refers to a frequency range that includes multiple frequency bands for 2GGSM, 4GLTE, and 5GNR, and is a lower frequency range than the Highband Group. The Midband Group is defined as a frequency range of 1427 to 2200 MHz. For Bands C and D, the 4GLTE band or the 5GNR band can be used; for example, any two of Band 1, Band 3, Band 25, and Band 66 for 4GLTE, and any two of n1, n3, n25, and n66 for 5GNR can be used. For Band G, the 2GGSM band can be used. However, Bands C, D, and G are not limited to these frequency bands.

[0083] Bands E, F, and H are distinct FDD bands included in the Low Band Group (LB). The Low Band Group refers to a frequency range that includes multiple frequency bands for 2GGSM, 4GLTE, and 5GNR, and is a lower frequency range than the Mid Band Group. The Low Band Group is defined as a frequency range of 617 to 960 MHz. For Bands E and F, the 4GLTE band or the 5GNR band can be used; for example, any two of Band 5, Band 8, Band 26, and Band 28 for 4GLTE, and any two of n5, n8, n26, and n28 for 5GNR can be used. For Band H, the 2GGSM band can be used. However, Bands E, F, and H are not limited to these frequency bands.

[0084] In addition, instead of the high-band, mid-band, and low-band groups, the band groups included in FR3 (Frequency Range 3) (7.125 GHz to 24.25 GHz) or FR2 (Frequency Range 2) (24.25 GHz to 71 GHz) may be used.

[0085] [1.4. Implementation Examples of the High-Frequency Module 1] Next, implementation examples of the high-frequency module 1 having the circuit configuration described above will be explained with reference to Figures 3 to 8. Figure 3 is a plan view of the high-frequency module 1 according to this embodiment. Figure 4 is a plan view of the high-frequency module 1 according to this embodiment, and is a view from the positive z-axis side through to the main surface 90b side of the module substrate 90. Figures 5 to 7 are cross-sectional views of the high-frequency module 1 according to this embodiment. The cross-sections of the high-frequency module 1 in Figures 5 and 6 are the cross-sections along the v-v line and vi-vi line in Figures 3 and 4, respectively. The cross-section of the high-frequency module 1 in Figure 7 is the cross-section along the vii-vii line in Figures 5 and 6.

[0086] In Figures 3 and 4, the resin members 95 and 96 that cover multiple circuit components and the metal shield 97 that covers the resin members 95 and 96 are omitted from the illustration so that the arrangement of each component can be easily understood, and each component is labeled to represent it. However, in reality, these labels do not need to be attached to each component. Also, in Figure 3, components hatched with diagonal lines represent optional components that are not essential to this embodiment.

[0087] Figures 3 to 7 show an example of the implementation of the high-frequency module 1, and the high-frequency module 1 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as restrictive.

[0088] In addition to the multiple circuit components shown in Figure 2, the high-frequency module 1 includes a module substrate 90, via conductors 911, 912, and 913, multiple columnar conductors 92, multiple cross-connecting conductors 93, multiple external connection terminals 94, resin members 95 and 96, and a metal shield 97.

[0089] The module substrate 90 has two opposing main surfaces 90a and 90b. The main surfaces 90a and 90b are examples of a first main surface and a second main surface, respectively. Wiring and via conductors (not shown) are formed inside and / or on the module substrate 90.

[0090] As the module substrate 90, for example, a low-temperature co-fired ceramics (LTCC) substrate or a high-temperature co-fired ceramics (HTCC) substrate having a laminated structure of multiple dielectric layers, a component-embedded substrate, a substrate having a redistribution layer (RDL), or a printed circuit board can be used, but is not limited to these.

[0091] Within the module substrate 90, via conductors 911, 912, and 913 are arranged. In this embodiment, each of the via conductors 911, 912, and 913 is a metal conductor (e.g., copper, aluminum, etc.) placed in a through-hole of the module substrate 90, and can connect conductors on the main surface 90a to conductors on the main surface 90b. Note that the via conductors 911, 912, and 913 are not limited to through-hole vias. For example, the via conductors 911, 912, and 913 may be a combination of blind vias and / or buried vias.

[0092] The via conductor 911 is an example of a first via conductor, and connects the power amplifier 11 to at least one of the plurality of columnar conductors 92. Specifically, one end of the via conductor 911 is connected to the ground electrode (e.g., emitter electrode) of a transistor included in the power amplifier 11. The other end of the via conductor 911 is connected to columnar conductors 921 and 922 included in the plurality of columnar conductors 92.

[0093] The via conductor 912 is an example of a second via conductor, and connects the power amplifier 12 to at least one of the plurality of columnar conductors 92. Specifically, one end of the via conductor 912 is connected to the ground electrode of a transistor included in the power amplifier 12. The other end of the via conductor 912 is connected to a columnar conductor 924 included in the plurality of columnar conductors 92.

[0094] The via conductor 913 connects the power amplifier 13 to at least one of the columnar conductors 92. Specifically, one end of the via conductor 913 is connected to the ground electrode of a transistor included in the power amplifier 13. The other end of the via conductor 913 is connected to at least one of the columnar conductors 92.

[0095] Multiple columnar conductors 92 are arranged on the main surface 90b of the module substrate 90 and extend from the main surface 90b. Specifically, each of the multiple columnar conductors 92 is a cylindrical body made of metal (e.g., copper, aluminum, etc.) that penetrates the resin member 96 from the main surface 90b and has its tip connected to the corresponding external connection terminal 94. The shape of the multiple columnar conductors 92 is not limited to a cylinder.

[0096] The columnar conductor 921 is an example of a first columnar conductor and is one of a plurality of columnar conductors 92. The columnar conductor 921 is connected to the power amplifier 11 via the via conductor 911. Specifically, one end of the columnar conductor 921 is connected to the via conductor 911 on the main surface 90b of the module substrate 90. The other end of the columnar conductor 921 is connected to the external connection terminal 941. In a plan view of the module substrate 90, the columnar conductor 921 overlaps with the via conductor 911 at least partially.

[0097] The columnar conductor 922 is an example of a second columnar conductor and is one of a plurality of columnar conductors 92. The columnar conductor 922 is connected to the power amplifier 11 via the via conductor 911. Specifically, one end of the columnar conductor 922 is connected to the via conductor 911 on the main surface 90b of the module substrate 90. The other end of the columnar conductor 922 is connected to the external connection terminal 942. In a plan view of the module substrate 90, the columnar conductor 922 overlaps with the via conductor 911 at least partially.

[0098] The columnar conductor 923 is an example of a third columnar conductor and is one of a plurality of columnar conductors 92. One end of the columnar conductor 923 is connected to the main surface 90b of the module board 90. The other end of the columnar conductor 923 is connected to the external connection terminal 943. The columnar conductor 923 does not overlap with the via conductor 911 in a plan view of the module board 90.

[0099] The columnar conductor 924 is an example of a fourth columnar conductor and is one of a plurality of columnar conductors 92. The columnar conductor 924 is connected to the power amplifier 12 via a via conductor 912. Specifically, one end of the columnar conductor 924 is connected to the via conductor 912 on the main surface 90b of the module board 90. The other end of the columnar conductor 924 is connected to the external connection terminal 944. In a plan view of the module board 90, the columnar conductor 924 overlaps with the via conductor 912 at least partially.

[0100] The columnar conductors 921 to 924 are arranged between the capacitor C11 and the semiconductor component 20 in a plan view of the module substrate 90. However, not all of the columnar conductors 921 to 924 are to be arranged between the capacitor C11 and the semiconductor component 20 in a plan view of the module substrate 90. For example, one, two, or three of the columnar conductors 921 to 924 may be arranged between the capacitor C11 and the semiconductor component 20 in a plan view of the module substrate 90. Furthermore, the columnar conductors 921 to 924 are not to be arranged between the capacitor C11 and the semiconductor component 20 in a plan view of the module substrate 90.

[0101] Multiple cross-connecting conductors 93 are embedded within the resin member 96 and connect adjacent columnar conductors 92 in two or more columnar conductors 92 included in the multiple columnar conductors 92. Specifically, each of the multiple cross-connecting conductors 93 is a metal (e.g., copper, aluminum, etc.) electrode that is embedded entirely within the resin member 96 and connects two adjacent columnar conductors 92. The multiple cross-connecting conductors 93 include cross-connecting conductors 931, 932, and 933.

[0102] The cross-connecting conductor 931 is an example of a first cross-connecting conductor and connects the columnar conductors 921 and 922. Specifically, one end of the cross-connecting conductor 931 is connected to the side surface of the columnar conductor 921, and the other end of the cross-connecting conductor 931 is connected to the side surface of the columnar conductor 922.

[0103] The cross-connecting conductor 932 is an example of a second cross-connecting conductor and connects the columnar conductors 921 and 923. Specifically, one end of the cross-connecting conductor 932 is connected to the side surface of the columnar conductor 921, and the other end of the cross-connecting conductor 932 is connected to the side surface of the columnar conductor 923.

[0104] The cross-connecting conductor 933 is an example of a third cross-connecting conductor and connects the columnar conductors 921 and 924. Specifically, one end of the cross-connecting conductor 933 is connected to the side surface of the columnar conductor 921, and the other end of the cross-connecting conductor 933 is connected to the side surface of the columnar conductor 924.

[0105] The cross-connecting conductors 931 to 933 are arranged between the capacitor C11 and the semiconductor component 20 in a plan view of the module substrate 90. However, not all of the cross-connecting conductors 931 to 933 are to be arranged between the capacitor C11 and the semiconductor component 20 in a plan view of the module substrate 90. For example, one, two, or three of the cross-connecting conductors 931 to 933 may be arranged between the capacitor C11 and the semiconductor component 20 in a plan view of the module substrate 90. Furthermore, the cross-connecting conductors 931 to 933 are not to be arranged between the capacitor C11 and the semiconductor component 20 in a plan view of the module substrate 90.

[0106] The multiple external connection terminals 94 include antenna connection terminals 101 to 103, high-frequency input terminals 111 to 113, high-frequency output terminals 121 to 123, digital control terminal 131, power supply voltage terminals 141 to 143, and a ground terminal. The multiple external connection terminals 94 are connected to input / output terminals and / or ground terminals, etc., on a motherboard (not shown) located outside the high-frequency module 1 in the negative z-axis direction of the high-frequency module 1. In addition, the multiple external connection terminals 94 are connected to the tips of the multiple columnar conductors 92 outside the high-frequency module 1. Note that the multiple external connection terminals 94 may be the tips of the multiple columnar conductors 92.

[0107] The multiple external connection terminals 94 include external connection terminals 941, 942, 943, and 944. External connection terminals 941 to 944 are connected to the ends of columnar conductors 921 to 924, respectively.

[0108] Furthermore, in a cross-section parallel to the main surface 90a of the module substrate 90, the cross-sectional area of ​​the conductor connected to the power amplifier 11 increases as it moves away from the power amplifier 11. This allows the heat generated in the power amplifier 11 to dissipate, improving the heat dissipation performance of the power amplifier 11.

[0109] The resin member 95 covers at least a portion of the main surface 90a of the module substrate 90 and the components on the main surface 90a. The material of the resin member 95 can be, for example, epoxy resin, but is not limited thereto. The resin member 95 has the function of ensuring the reliability of the components on the main surface 90a, such as mechanical strength and moisture resistance. Note that the resin member 95 does not necessarily have to be included in the high-frequency module 1.

[0110] The resin member 96 covers at least a portion of the main surface 90b of the module substrate 90 and the components on the main surface 90b. The material of the resin member 96 can be, for example, epoxy resin, but is not limited thereto. The resin member 96 has the function of ensuring the reliability of the components on the main surface 90b, including mechanical strength and moisture resistance.

[0111] The metal shield 97 is a thin metal film formed on the surfaces of the resin members 95 and 96, for example, by sputtering. The metal shield 97 is formed to cover at least a portion (the top and side surfaces) of the surfaces of the resin members 95 and 96. The metal shield 97 is connected to ground and can suppress external noise from entering the electronic components constituting the high-frequency module 1, and from noise generated in the high-frequency module 1 interfering with other modules or other equipment. Note that the metal shield 97 does not necessarily have to be included in the high-frequency module 1.

[0112] Each of the power amplifiers 11 (HB PA), 12 (MB PA), and 13 (LB PA) is included in the semiconductor components arranged on the main surface 90a of the module substrate 90. For example, silicon germanium (SiGe) or gallium arsenide (GaAs) can be used as the semiconductor material for the power amplifiers 11 to 13. In this case, some or all of the transistors included in the power amplifiers 11 to 13 can be heterojunction bipolar transistors (HBTs). Alternatively, gallium nitride (GaN) or silicon carbide (SiC) can be used as the semiconductor material for the power amplifiers 11 to 13. In this case, some or all of the transistors included in the power amplifiers 11 to 13 can be HEMTs (High Electron Mobility Transistors) or MESFETs (Metal-Semiconductor Field Effect Transistors). Alternatively, silicon single crystal (Si) can be used as the semiconductor material for the power amplifiers 11 to 13. In this case, some or all of the transistors included in the power amplifiers 11 to 13 may be made of CMOS (Complementary Metal Oxide Semiconductor) and may be manufactured by an SOI (Silicon on Insulator) process. Each of the power amplifiers 11 to 13 may be divided into multiple semiconductor components. Furthermore, any combination of the power amplifiers 11 to 13 may be included in a single semiconductor component.

[0113] Each of the inductors L11, L12, and L13 is mounted as a chip inductor on the main surface 90a of the module board 90. A chip inductor refers to a discrete surface mount device (SMD) that constitutes an inductor. Note that inductors L11, L12, and L13 are not limited to chip inductors. For example, some or all of the inductors L11, L12, and L13 may be formed by wiring on or within the module board 90, or may be included in an integrated passive device (IPD).

[0114] Capacitors C11, C12, and C13 are examples of first surface mount devices and are mounted as chip capacitors on the main surface 90b of the module substrate 90. A chip capacitor refers to a discrete SMD that constitutes a capacitor. Note that capacitors C11, C12, and C13 are not limited to chip capacitors. For example, some or all of capacitors C11, C12, and C13 may be formed by wiring on or within the module substrate 90, or may be included in the IPD.

[0115] The low-noise amplifiers 21-23 (LNA), switch circuits 51-53 (ASW), and switch circuits 71 and 72 (LNA INSW) are included in the semiconductor component 20 arranged on the main surface 90b of the module substrate 90. The semiconductor component 20 is an example of a second surface mount device. As the semiconductor material of the semiconductor component 20, for example, silicon single crystal (Si), gallium nitride (GaN), or silicon carbide (SiC) can be used. In this case, some or all of the transistors included in the semiconductor component 20 can be composed of field-effect transistors (FETs). Bipolar transistors may be used instead of FETs. Furthermore, the semiconductor component 20 may be divided into multiple semiconductor components.

[0116] The transmit / receive filters 31 and 32 (HB TRX), duplexers 33 and 34 (MB DPX), duplexers 35 and 36 (LB DPX), and transmit filters 37 and 38 are arranged on the main surface 90a of the module board 90. Surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) filters, LC filters, or dielectric filters, or any combination thereof, may be used for the transmit / receive filters 31 and 32, duplexers 33 to 36, and transmit filters 37 and 38, and are not limited to these.

[0117] Matching circuits 41 to 43 are mounted on the main surface 90a of the module board 90 using chip inductors and / or chip capacitors. The inductors and / or capacitors included in matching circuits 41 to 43 may be formed by wiring on or within the module board 90, or they may be included in the IPD.

[0118] The switch circuits 61-63 (BSSW) are included in the semiconductor component 60 arranged on the main surface 90a of the module substrate 90. The semiconductor material of the semiconductor component 60 can be the same semiconductor material as that used for the semiconductor component 20.

[0119] The switch circuit 81 (PA INSW) and the PA control circuit 82 (PAC) are included in the semiconductor component 80 arranged on the main surface 90a of the module substrate 90. The semiconductor material of the semiconductor component 80 can be the same semiconductor material as that used for the semiconductor component 20.

[0120] In this embodiment, the explanation has mainly focused on the via conductors 911 and 912, the columnar conductors 92 (921-924), the cross-connecting conductors 93 (931-933), and the external connection terminals 94 (941-944) connected to the power amplifiers 11 and 12. However, the same applies to the via conductors 912 and 913, the columnar conductors 92, the cross-connecting conductors 93, and the external connection terminals 94 connected to the power amplifiers 12 and 13, so their explanation will be omitted.

[0121] [1.5. Summary] As described above, the high-frequency module 1 according to this embodiment comprises a module substrate 90 having main surfaces 90a and 90b facing each other, a power amplifier 11 disposed on the main surface 90a, a resin member 96 covering at least a part of the main surface 90b, a plurality of columnar conductors 92 including columnar conductors 921 and 922 disposed on the main surface 90b, a via conductor 911 disposed within the module substrate 90 and connecting the power amplifier 11 to the columnar conductors 921, and a cross-connecting conductor 931 embedded in the resin member 96 and connecting the columnar conductors 921 and 922.

[0122] According to this, the heat transferred from the power amplifier 11 to the columnar conductor 921 via the via conductor 911 is then transferred to the columnar conductor 922 via the cross-connecting conductor 931. Therefore, the number of heat paths from the power amplifier 11 to the motherboard can be increased, improving the heat dissipation performance of the power amplifier 11. In particular, in addition to increasing the cross-sectional area of ​​the heat paths by increasing the number of columnar conductors connected to the power amplifier 11, the heat dissipation area to the resin member 96 can also be increased by the cross-connecting conductor 931, which is effective in improving the heat dissipation performance of the power amplifier 11.

[0123] For example, in the high-frequency module 1 according to this embodiment, the via conductor 911 may further connect the power amplifier 11 to the columnar conductor 922, and in a plan view of the module substrate 90, the via conductor 911 may at least partially overlap with the columnar conductor 921 and at least partially overlap with the columnar conductor 922.

[0124] According to this, the heat path from the via conductor 911 to the columnar conductors 921 and 922 can be shortened, improving the heat dissipation of the power amplifier 11. Furthermore, by connecting the columnar conductors 921 and 922, which constitute a shorter heat path, with a cross-connecting conductor 931, the effect of increasing the cross-sectional area of ​​the heat path and thus improving the heat dissipation of the power amplifier 11 is significant.

[0125] For example, in the high-frequency module 1 according to this embodiment, the plurality of columnar conductors 92 may further include columnar conductors 923 that do not overlap with the via conductors 911 in a plan view of the module substrate 90, and the high-frequency module 1 may further include cross-connecting conductors 932 embedded in the resin member 96 and connecting the columnar conductors 921 and 923.

[0126] According to this, it becomes possible to connect even more columnar conductors to the power amplifier 11, and the heat dissipation of the power amplifier 11 can be further improved.

[0127] For example, in the high-frequency module 1 according to this embodiment, the plurality of columnar conductors 92 may further include a columnar conductor 924, and the high-frequency module 1 may further include a power amplifier 12 disposed on the main surface 90a, a via conductor 912 disposed within the module substrate 90 and connecting the power amplifier 12 to the columnar conductor 924, and a cross-connecting conductor 933 embedded in the resin member 96 and connecting the columnar conductors 921, 922 or 923 and the columnar conductor 924.

[0128] According to this, the columnar conductor 924 connected to a power amplifier 12 that is different from power amplifier 11 can be connected to the columnar conductors 921, 922, or 923 connected to power amplifier 11, thereby improving the heat dissipation of power amplifiers 11 and 12.

[0129] For example, the high-frequency module 1 according to this embodiment may further include a first surface mount device and a second surface mount device arranged on the main surface 90b, and at least one of the columnar conductors 921 to 924 and the cross-connecting conductors 931 to 933 may be arranged between the first surface mount device and the second surface mount device in a plan view of the module substrate 90.

[0130] According to this, at least one of the columnar conductors 921-924 and the cross-connecting conductors 931-933 can improve the isolation between the first surface mount device and the second surface mount device.

[0131] Furthermore, for example, in the high-frequency module 1 according to this embodiment, the first surface-mount device may include a capacitor C11 connected between the path between the power amplifier 11 and the DC power supply and the ground, and the second surface-mount device may include a low-noise amplifier 21.

[0132] According to this, at least one of the columnar conductors 921 to 924 can improve the isolation between the capacitor C11 and the low-noise amplifier 21, thereby suppressing a decrease in receiving sensitivity.

[0133] (Modification) Next, a modification of the above embodiment will be described. In this modification, the main difference from the above embodiment is that a switch circuit 81 is placed on the main surface 90b of the module board 90 instead of capacitors C11 to C13. Below, this modification will be described with reference to the drawings, focusing on the differences from the above embodiment.

[0134] The circuit configuration of the communication device 5 and high-frequency module 1A in this modified example is the same as in the above embodiment, so its illustration and description are omitted.

[0135] [2.1. Implementation Example of High-Frequency Module 1A] An implementation example of the high-frequency module 1A according to this modified example will be described with reference to Figures 8, 9, and 10. Figure 8 is a plan view of the high-frequency module 1A according to this modified example. Figure 9 is a plan view of the high-frequency module 1A according to this modified example, and is a view from the positive z-axis side towards the main surface 90b of the module substrate 90. Figure 10 is a cross-sectional view of the high-frequency module 1A according to this modified example. The cross-section of the high-frequency module 1A in Figure 10 is the cross-section along the line x-x in Figures 8 and 9.

[0136] In Figures 8 and 9, the illustration of the resin members 95 and 96 covering multiple circuit components and the metal shield 97 covering the resin members 95 and 96 is omitted so that the arrangement of each component can be easily understood, and each component is labeled to represent it. However, in reality, these labels do not need to be attached to each component. Also, in Figure 8, the components hatched with diagonal lines represent optional components that are not essential to this embodiment.

[0137] Figures 8 to 10 show an example of the implementation of the high-frequency module 1A, and the high-frequency module 1A can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1A provided below should not be interpreted as restrictive.

[0138] Capacitors C11, C12, and C13 are mounted as chip capacitors on the main surface 90a of the module substrate 90.

[0139] The switch circuit 81 (PA INSW) is located on the main surface 90b of the module substrate 90 and is included in a different semiconductor component than the PA control circuit 82. The semiconductor material of the semiconductor component can be the same semiconductor material as that used for the semiconductor component 20.

[0140] The PA control circuit 82 is located on the main surface 90a of the module substrate 90 and is contained in a different semiconductor component than the switch circuit 81. The semiconductor material of the semiconductor component can be the same semiconductor material as that used for the semiconductor component 20.

[0141] The columnar conductors 921 to 924 are arranged between the switch circuit 81 and the semiconductor component 20 in a plan view of the module substrate 90. However, not all of the columnar conductors 921 to 924 are to be arranged between the switch circuit 81 and the semiconductor component 20 in a plan view of the module substrate 90. For example, one, two, or three of the columnar conductors 921 to 924 may be arranged between the switch circuit 81 and the semiconductor component 20 in a plan view of the module substrate 90.

[0142] [2.2. Summary] As described above, in the high-frequency module 1A according to this modified example, the first surface-mount device may include a switch circuit 81 connected to the input terminal of the power amplifier 11, and the second surface-mount device may include a low-noise amplifier 21.

[0143] According to this, at least one of the columnar conductors 921 to 924 can improve the isolation between the switch circuit 81 and the low-noise amplifier 21, thereby suppressing a decrease in receiving sensitivity.

[0144] (Other Embodiments) The high-frequency module according to the present invention has been described above based on embodiments, but the high-frequency module according to the present invention is not limited to the above embodiments. Other embodiments realized by combining any of the components in the above embodiments, modified versions obtained by applying various modifications to the above embodiments that a person skilled in the art can conceive of without departing from the spirit of the present invention, and various devices incorporating the above high-frequency module are also included in the present invention.

[0145] For example, in the circuit configuration of the high-frequency module according to the above embodiment, other circuit elements and wiring may be inserted between the paths connecting each circuit element and signal path disclosed in the drawings. For example, an impedance matching circuit may be connected between the transmit / receive filters 31 and 32 and the duplexers 33 to 36 and the switch circuits 51 to 53. Also, for example, a coupler may be connected between the switch circuits 51 to 53 and the antenna connection terminals 101 to 103.

[0146] This invention can be widely used in communication devices such as mobile phones as a high-frequency module positioned in the front end.

[0147] 1, 1A High-frequency module 2a, 2b, 2c Antenna 3 RFIC 4 BBIC 5 Communication device 11, 12, 13 Power amplifier 20, 60, 80 Semiconductor components 21, 22, 23 Low-noise amplifier 31, 32 Transmit / receive filter 33, 34, 35, 36 Duplexer 37, 38 Transmit filter 41, 42, 43 Matching circuit 51, 52, 53, 61, 62, 63, 71, 72, 81 Switch circuit 82 PA control circuit 90 Module board 90a, 90b Main surface 92, 921, 922, 923, 924 Columnar conductor 93, 931, 932, 933 Cross-connection conductor 94, 941, 942, 943, 944 External connection terminal 95, 96 Resin component 97 Metal shield 101, 102, 103 Antenna connection terminals 111, 112, 113 High frequency input terminals 121, 122, 123 High frequency output terminal 131 Digital control terminals 141, 142, 143 Power supply voltage terminals 331, 341, 351, 361 Transmitting filter 332, 342, 352, 362 Receiving filter 510, 520, 530, 610, 613, 620, 630, 710, 720, 811, 812, 813 Common terminal 511, 512, 521, 522, 523, 531, 532, 533, 611, 612, 621, 622, 623, 631, 632, 633, 711, 712, 721, 722, 814, 815, 816 Select terminals 911, 912, 913 Via conductors C11, C12, C13 Capacitors L11, L12, L13 Inductors

Claims

1. A high-frequency module comprising: a module substrate having a first main surface and a second main surface facing each other; a first power amplifier disposed on the first main surface; a resin member covering at least a portion of the second main surface; a plurality of columnar conductors disposed on the second main surface, including a first columnar conductor and a second columnar conductor; a first via conductor disposed within the module substrate and connecting the first power amplifier to the first columnar conductor; and a first cross-connecting conductor embedded within the resin member and connecting the first columnar conductor and the second columnar conductor.

2. The high-frequency module according to claim 1, wherein the first via conductor further connects the first power amplifier to the second columnar conductor, and in a plan view of the module substrate, the first via conductor at least partially overlaps the first columnar conductor and at least partially overlaps the second columnar conductor.

3. The high-frequency module according to claim 2, wherein the plurality of columnar conductors further include a third columnar conductor that does not overlap with the first via conductor in a plan view of the module substrate, and the high-frequency module further includes a second cross-connecting conductor embedded in the resin member and connecting the first columnar conductor and the third columnar conductor.

4. The high-frequency module according to claim 3, wherein the plurality of columnar conductors further include a fourth columnar conductor, and the high-frequency module further comprises: a second power amplifier disposed on the first main surface; a second via conductor disposed within the module substrate and connecting the second power amplifier to the fourth columnar conductor; and a third cross-connecting conductor embedded in the resin member and connecting the first columnar conductor, the second columnar conductor, or the third columnar conductor to the fourth columnar conductor.

5. The high-frequency module according to claim 4, further comprising a first surface mount device and a second surface mount device disposed on the second main surface, wherein at least one of the first columnar conductor, the second columnar conductor, the third columnar conductor, the fourth columnar conductor, the first cross-connecting conductor, the second cross-connecting conductor and the third cross-connecting conductor is disposed between the first surface mount device and the second surface mount device in a plan view of the module substrate.

6. The high-frequency module according to claim 5, wherein the first surface-mount device includes a capacitor connected between the path between the first power amplifier and the DC power supply and ground, and the second surface-mount device includes a low-noise amplifier.

7. The high-frequency module according to claim 5, wherein the first surface-mount device includes a switch circuit connected to the input terminal of the first power amplifier, and the second surface-mount device includes a low-noise amplifier.

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