Cleaning device, apparatus, and substrate processing system

Abstract

The disclosed cleaning device is provided with a cover and a cleaning mechanism. The cover defines a cleaning space. The cover is configured to separate a processing space in a processing chamber of a substrate processing apparatus into the cleaning space surrounding a substrate support surface of a substrate support part in the processing chamber and a space outside the cover. The cleaning space is defined by the cover and the substrate support surface when the cover is placed on the substrate support part. The cleaning mechanism includes a rotary shaft, a drive part configured to rotate the rotary shaft, and a cleaning member attached to the rotary shaft and configured to clean the substrate support part in the cleaning space.

Description

Cleaning Device, Device, and Substrate Processing System

[0001] Exemplary embodiments of the present disclosure relate to a cleaning device, a device, and a substrate processing system.

[0002] A cleaning device is used to clean the substrate support part in a substrate processing device. In Patent Document 1 below, a maintenance robot of a substrate processing device is disclosed as a type of cleaning device. The maintenance robot disclosed in Patent Document 1 includes a robot arm and a brush tool attached to the tip of the robot arm.

[0003] International Publication No. 2023 / 149958

[0004] The present disclosure provides a technique for suppressing contamination of the processing chamber during cleaning of the substrate support part.

[0005] In one exemplary embodiment, a cleaning device is provided. This cleaning device includes a cover and a cleaning mechanism. The cover is a cover that defines a cleaning space, and is configured to separate the processing space in the processing chamber of the substrate processing device into the cleaning space surrounding the substrate support surface of the substrate support part in the processing chamber and the space outside the cover. The cleaning space is defined by the cover and the substrate support surface when the cover is placed on the substrate support part. The cleaning mechanism includes a rotating shaft, a driving part configured to rotate the rotating shaft, and a cleaning member attached to the rotating shaft and configured to clean the substrate support part in the cleaning space.

[0006] According to one exemplary embodiment, it is possible to suppress contamination of the processing chamber during cleaning of the substrate support part.

[0007] Figure 1 is a diagram showing a substrate processing system according to one exemplary embodiment. Figure 2 is a schematic diagram showing an example of a substrate processing apparatus included in the substrate processing system shown in Figure 1. Figure 3 is a schematic diagram showing a cleaning apparatus according to one exemplary embodiment. Figure 4 is a schematic diagram showing an exemplary cleaning assembly. Figure 5 is a flowchart showing control by a control circuit according to one exemplary embodiment. Figure 6 is a schematic diagram showing one step of control by a control circuit according to one exemplary embodiment. Figure 7 is a schematic diagram showing one step of control by a control circuit according to one exemplary embodiment. Figure 8 is a schematic diagram showing one step of control by a control circuit according to one exemplary embodiment. Figure 9 is a schematic diagram showing one step of control by a control circuit according to one exemplary embodiment. Figure 10 is a schematic diagram showing one step of control by a control circuit according to one exemplary embodiment. Figure 11 is a schematic diagram showing another example of a substrate processing apparatus included in the substrate processing system shown in Figure 1. Figure 12 is a schematic diagram showing a cleaning apparatus according to another exemplary embodiment. Figure 13 is a flowchart showing control by a control circuit according to another exemplary embodiment. Figure 14 is a schematic diagram showing one step of control by a control circuit according to another exemplary embodiment. Figure 15 is a schematic diagram showing a cleaning apparatus according to yet another exemplary embodiment. Figure 16 is a schematic diagram showing another exemplary cleaning assembly. Figure 17 is a schematic diagram showing the configuration of the cleaning assembly and the transport arm in the cleaning apparatus shown in Figure 15. Figure 18 is a flowchart showing control by a control circuit according to yet another exemplary embodiment. Figure 19 is a schematic diagram showing one step of control by a control circuit according to yet another exemplary embodiment. Figure 20 is a schematic diagram showing one step of control by a control circuit according to yet another exemplary embodiment. Figure 21 is a schematic diagram showing one step of control by a control circuit according to yet another exemplary embodiment. Figure 22 is a schematic diagram showing one step of control by a control circuit according to yet another exemplary embodiment. Figure 23 is a schematic diagram showing one step of control by a control circuit according to yet another exemplary embodiment. Figure 24 is a schematic diagram showing one step of control by a control circuit according to yet another exemplary embodiment. Figure 25 is a schematic diagram showing one step of control by a control circuit according to yet another exemplary embodiment.Figure 26 is a block diagram of a computer (a type of circuit) capable of realizing the various control modes described herein.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings. The same or corresponding parts in each drawing will be denoted by the same reference numerals. The drawings may be simplified or exaggerated in some parts for ease of understanding, and the dimensional ratios are not limited to those shown in the drawings.

[0009] Figure 1 shows a substrate processing system according to one exemplary embodiment. The substrate processing system PS shown in Figure 1 comprises process modules PM1 to PM6 and a cleaning device CD.

[0010] The substrate processing system PS may further include tables 2a to 2d, containers 4a to 4d, an aligner AN, load lock modules LL1 and LL2, and a transport module TM. The number of tables, containers, and load lock modules in the substrate processing system PS can be one or more arbitrary numbers. Also, the number of process modules in the substrate processing system PS can be one or more arbitrary numbers.

[0011] The bases 2a to 2d are arranged along one edge of the loader module LM. The containers 4a to 4d are each mounted on the bases 2a to 2d. Each of the containers 4a to 4d is, for example, a container called a FOUP (Front Opening Unified Pod). Each of the containers 4a to 4d is configured to house the substrate W inside.

[0012] The loader module LM has a chamber. The pressure inside the chamber of the loader module LM is set to atmospheric pressure. The loader module LM has a transport device TU1. The transport device TU1 is, for example, a transport robot and is controlled by a control circuit MC. The transport device TU1 is configured to transport the substrate W through the chamber of the loader module LM. The transport device TU1 can transport the substrate W between each of the containers 4a to 4d and the aligner AN, between the aligner AN and each of the load lock modules LL1 and LL2, and between each of the load lock modules LL1 and LL2 and each of the containers 4a to 4d. The aligner AN is connected to the loader module LM. The aligner AN is configured to adjust (calibrate) the position of the substrate W.

[0013] Load lock modules LL1 and LL2 are each located between the loader module LM and the transport module TM. Each of load lock modules LL1 and LL2 provides a pre-pressure chamber. Each of load lock modules LL1 and LL2 is connected to the loader module LM via a gate valve. Furthermore, each of load lock modules LL1 and LL2 is connected to the transport module TM via a gate valve.

[0014] The transport module TM has a depressurized transport chamber TC. The transport module TM has a transport device TU2. The transport device TU2 is, for example, a transport robot and is controlled by a control circuit MC. The transport device TU2 is configured to transport the substrate W through the transport chamber TC. The transport device TU2 can transport the substrate between each of the load lock modules LL1 and LL2 and each of the process modules PM1 to PM6, and between any two process modules among the process modules PM1 to PM6.

[0015] Each of the process modules PM1 to PM6 is connected to the transport module TM via a gate valve. Each of the process modules PM1 to PM6 is a device configured to perform dedicated substrate processing. At least one of the process modules PM1 to PM6 is a substrate processing apparatus according to an exemplary embodiment described later.

[0016] The cleaning device CD comprises a cleaning assembly. The cleaning device CD may further comprise a housing chamber and a transport device. The transport device of the cleaning device CD is configured to move the cleaning assembly between the housing space of the housing chamber and the processing space of the processing chamber. Details of the cleaning device CD will be described later.

[0017] Each part of the substrate processing system PS and the cleaning device CD is controlled by a device MCD equipped with a control circuit MC. The control circuit MC is configured to control each part of the substrate processing system PS and the cleaning device CD. The control circuit MC may be a computer equipped with a processor, memory device, input device, display device, etc. The control circuit MC executes a control program stored in the memory device and controls each part of the substrate processing system PS and the cleaning device CD based on the recipe data stored in the memory device.

[0018] The following describes a substrate processing apparatus according to an exemplary embodiment. Figure 2 is a schematic diagram showing an example of a substrate processing apparatus included in the substrate processing system shown in Figure 1. The substrate processing apparatus 10 shown in Figure 2 is a capacitively coupled plasma processing apparatus and can be used as a substrate processing apparatus in the substrate processing system PS.

[0019] The substrate processing apparatus 10 includes a processing chamber 12. The processing chamber 12 provides its internal space as a processing space S1. A plasma-resistant coating is formed on the inner wall surface of the processing chamber 12. This coating may be an anodized aluminum film or a film formed from yttrium oxide. The processing chamber 12 is grounded.

[0020] The processing chamber 12 includes side walls 12s and 12t. Side walls 12s and 12t are formed integrally. The entire integrally formed side walls 12s and 12t have a substantially cylindrical shape. Side wall 12s provides a passage 12p. The processing space S1 is connected to the internal space of the transport chamber TC of the transport module TM via the passage 12p. The passage 12p can be opened and closed by a gate valve 12g. When a substrate to be processed in the substrate processing apparatus 10 is transported between the processing space S1 of the processing chamber 12 and the outside of the processing chamber 12, it passes through the passage 12p.

[0021] The side wall 12t further provides an opening 12o. The opening 12o is sized to allow the cleaning assembly, described later, to pass through. The processing space S1 of the processing chamber 12 can be connected to the housing space 112 of the cleaning device CD via the opening 12o. The opening 12o can be opened and closed by a gate valve 12v.

[0022] In one embodiment, a portion of the side wall 12t has a double structure formed from an inner wall 12i and an outer wall 12e. The inner wall 12i and the outer wall 12e provide a space 12q between them. An opening 12o is formed in the inner wall 12i and the outer wall 12e. A gate valve 12v is provided along the inner wall 12i to open and close the opening 12o.

[0023] A support portion 15 is provided on the bottom of the processing chamber 12. The support portion 15 has a substantially cylindrical shape. The support portion 15 is made of, for example, an insulating material. The support portion 15 extends upward from the bottom of the processing chamber 12 within the processing space S1.

[0024] A substrate support portion 16 is provided within the processing space S1. The substrate support portion 16 is supported by a support portion 15. The substrate support portion 16 is configured to hold a substrate placed on it. In one example, the substrate support portion 16 has a substrate support surface 16a. The substrate is placed on the substrate support surface 16a.

[0025] The substrate support portion 16 further comprises a base 18 and an electrostatic chuck 20. The base 18 includes a conductive member. The conductive member of the base 18 can function as a lower electrode. The electrostatic chuck 20 is positioned on the base 18. In one embodiment, the electrostatic chuck 20 includes a substrate support surface 16a.

[0026] The electrostatic chuck 20 has an insulating layer and film-like electrodes provided within the insulating layer. A DC power supply 22 is electrically connected to the electrodes of the electrostatic chuck 20 via a switch 23. A DC voltage is applied to the electrodes of the electrostatic chuck 20 from the DC power supply 22. When a DC voltage is applied to the electrodes of the electrostatic chuck 20, the electrostatic chuck 20 generates an electrostatic attraction force, attracting the substrate to the electrostatic chuck 20 and holding the substrate. A heater may be built into the electrostatic chuck 20, and a heater power supply provided outside the processing chamber 12 may be connected to the heater.

[0027] A focus ring 24 is provided on the periphery of the electrostatic chuck 20. The focus ring 24 is a substantially annular plate. The focus ring 24 is positioned to surround the electrostatic chuck 20. The focus ring 24 is provided to improve the uniformity of etching. The focus ring 24 can be formed from a material such as silicon or quartz.

[0028] A flow path 18f is provided inside the base 18. Coolant is supplied to the flow path 18f from a chiller unit 27 located outside the processing chamber 12 via piping 26a. The coolant supplied to the flow path 18f is returned to the chiller unit 27 via piping 26b. In other words, the coolant circulates between the flow path 18f and the chiller unit 27. By controlling the temperature of this coolant, the temperature of the substrate support section 16 (or electrostatic chuck 20) ​​and the temperature of the substrate that can be placed on the substrate support section 16 are adjusted. As the coolant, a general coolant that can set the temperature of the substrate to a temperature of -60°C or higher, for example, between -50°C and -30°C, is used.

[0029] The substrate processing apparatus 10 is provided with a gas supply line 28. The gas supply line 28 supplies heat transfer gas, such as He gas, from a heat transfer gas supply mechanism between the upper surface (substrate support surface 16a) of the electrostatic chuck 20 and the back surface of the substrate.

[0030] The substrate processing apparatus 10 further comprises an upper electrode 30. The upper electrode 30 is provided above the substrate support portion 16. The upper electrode 30 is supported on the upper part of the processing chamber 12 via a member 32. The upper electrode 30 may include an electrode plate 34 and a support 36. The lower surface of the electrode plate 34 faces the processing space S1. The electrode plate 34 is provided with a plurality of gas discharge holes 34a. This electrode plate 34 may be made of a material such as silicon or silicon carbide.

[0031] The support 36 detachably supports the electrode plate 34 and is made of a conductive material such as aluminum. A gas diffusion chamber 36a is formed inside the support 36. The gas diffusion chamber 36a is located above the substrate support 16. The planar shape of the gas diffusion chamber 36a, viewed in the vertical direction, is approximately circular. A gas supply line 38a is connected to the gas diffusion chamber 36a. The gas supply line 38a is configured to supply gas from the gas supply mechanism into the processing space S1 of the processing chamber 12.

[0032] A baffle member 48 is provided between the support portion 15 and the side wall of the processing chamber 12. The baffle member 48 is, for example, a plate-shaped member, and the surface of the aluminum base material has a Y ２ O ３ It can be formed by coating with ceramics such as the above. The baffle member 48 has a plurality of holes that penetrate through the baffle member 48. Below the baffle member 48, an exhaust device 50 is connected to the bottom of the processing chamber 12 via an exhaust pipe 52. The exhaust device 50 has a pressure controller such as a pressure regulating valve and a vacuum pump such as a turbomolecular pump, and can reduce the pressure of the processing space S1 to a desired level.

[0033] The substrate processing apparatus 10 further comprises a first power supply 62 and a second power supply 64. The first power supply 62 is a power supply that generates a source RF (radio frequency) signal for plasma generation. The source RF (radio frequency) signal has a frequency in the range of, for example, 27 to 100 MHz. The first power supply 62 is connected to the upper electrode 30 via a matching unit 63. The matching unit 63 has a circuit for matching the output impedance of the first power supply 62 with the impedance of the load side (upper electrode 30 side). The first power supply 62 may also be connected to a conductive member of the base 18 via the matching unit 63.

[0034] The second power supply 64 is a power supply that generates an electrical bias for drawing ions into a substrate that can be placed on the substrate support 16. The electrical bias is a bias RF signal that fluctuates the bias frequency or a voltage pulse that is periodically generated at time intervals of the reciprocal of the bias frequency. The bias frequency has a frequency in the range of, for example, 50 kHz to 13.56 MHz. The second power supply 64 is connected to a conductive member of the base 18 via a matching circuit 65. The matching circuit 65 has a circuit for matching the output impedance of the second power supply 64 with the impedance of the load side (base 18 side).

[0035] The following describes a cleaning apparatus according to an exemplary embodiment. Figure 3 is a schematic diagram showing a cleaning apparatus according to one exemplary embodiment. The cleaning apparatus CD shown in Figure 3 is a device for cleaning the substrate support portion 16 of the substrate processing apparatus 10. The cleaning apparatus CD includes a housing chamber 110. The housing chamber 110 has a housing space 112 and an internal space 114. The housing chamber 110 can be connected to the processing chamber 12 so as to provide an airtight communication between the processing space S1 and the housing space 112. The housing space 112 is provided above the internal space 114 and is separated from the internal space 114. The side wall 110s of the housing chamber 110 provides an opening 110o that is continuous with the housing space 112. The opening 110o can be opened and closed by a gate valve 116.

[0036] In one embodiment, a portion of the side wall 110s has a double structure formed from an inner wall 110i and an outer wall 110e. The inner wall 110i and the outer wall 110e provide a space 110q between them. An opening 110o is formed in the inner wall 110i and the outer wall 110e. A gate valve 116 is provided along the inner wall 110i to open and close the opening 110o.

[0037] Figure 4 is a schematic diagram of an exemplary cleaning assembly. The cleaning apparatus CD further comprises a cleaning assembly 120. The cleaning assembly 120 shown in Figure 4 includes a cover 122 and a cleaning mechanism 124. The cover 122 defines a cleaning space S2. The cover 122 is configured to separate the processing space S1 within the processing chamber 12 into a cleaning space S2 surrounding the substrate support surface 16a and a space S3 outside the cover 122. The cleaning space S2 is defined by the cover 122 and the substrate support surface 16a when the cover 122 is placed on the substrate support portion 16. In one embodiment, the cover 122 includes a top portion 122a and a side portion 122b extending downward from the top portion 122a. The top portion 122a is configured to face the substrate support portion 16. The top portion 122a has a disc shape. The side portion 122b is configured to surround the substrate support portion 16. The side portion 122b has a cylindrical shape. The cover 122 does not necessarily have to include the top portion 122a and the side portion 122b. In this case, the cover 122 may have a cup shape.

[0038] The cover 122 further includes an outlet 122o. The outlet 122o is an outlet for discharging gas from the cleaning space S2. The outlet 122o is provided on the top portion 122a and is a through-hole penetrating the top portion 122a. The outlet 122o may also be provided on the side portion 122b, for example. In one embodiment, the outlet 122o is also the opening end of an exhaust passage 138. That is, the exhaust passage 138 is configured to be connected to the cleaning space S2. The gas discharged from the outlet 122o is sent to the discharge device 130 through the exhaust passage 138. The discharge device 130 is configured to reduce the pressure of the cleaning space S2. For example, the discharge device 130 reduces the pressure of the cleaning space S2 when the cleaning space S2 is provided by the cover 122 and the substrate support surface 16a.

[0039] The cleaning mechanism 124 includes a rotating shaft 124a. The rotating shaft 124a is, for example, a shaft. In one embodiment, the rotating shaft 124a extends downward through a hole formed approximately in the center of the top portion 122a.

[0040] The cleaning mechanism 124 further includes a drive unit 124b. The drive unit 124b is configured to rotate the rotating shaft 124a. Specifically, the drive unit 124b generates a driving force to rotate the rotating shaft 124a. In one embodiment, the driving force generated by the drive unit 124b is transmitted to the rotating shaft 124a via a link belt 124d. A power supply 124p is connected to the drive unit 124b via a power supply line (not shown). One end of the power supply line is connected to the drive unit 124b, and the other end is connected to the power supply 124p.

[0041] In one embodiment, the drive unit 124b includes a motor 124b1 and a shaft 124b2. The motor 124b1 is located outside the cover 122. For example, the motor 124b1 is located adjacent to the side portion 122b. A case member 124e is provided around the motor 124b1, and the motor 124b1 is protected by the case member 124e. The shaft 124b2 extends upward through a hole formed in the upper part of the case member 124e, and a sealing member 124g is provided at the edge of the hole.

[0042] A pulley is attached to the shaft 124b2, and the link belt 124d connects the pulley and the pulley attached to the rotating shaft 124a. Thereby, the driving force generated by the driving unit 124b is transmitted to the rotating shaft 124a, and the rotating shaft 124a rotates. A case member 124f is provided above the link belt 124d, and the shaft 124b2 and the link belt 124d are protected by the case member 124f.

[0043] The cleaning mechanism 124 further includes a cleaning member 124c. The cleaning member 124c is configured to clean the substrate support portion 16 within the cleaning space S2. The cleaning member 124c may be, for example, a brush or a sponge. The size and shape of the cleaning member 124c may be appropriately changed depending on which part of the substrate support portion 16 is to be cleaned.

[0044] The cleaning member 124c is attached to the rotating shaft 124a. For example, a plurality of cleaning members 124c are attached to the rotating shaft 124a. In one embodiment, the cleaning mechanism 124 further includes a driving force transmission mechanism 126, and the cleaning member 124c is attached to the rotating shaft 124a via the driving force transmission mechanism 126. The driving force transmission mechanism 126 has a so-called planetary gear mechanism. The driving force transmission mechanism 126 includes a sun gear 126a, a plurality of planetary gears 126b, a connecting member 126c, an elastic member 126d, and an internal gear 126e. Corresponding cleaning members 124c among the plurality of cleaning members 124c are attached to each of the sun gear 126a and the plurality of planetary gears 126b via the connecting member 126c and the elastic member 126d.

[0045] The sun gear 126a is connected to the rotating shaft 124a. The plurality of planetary gears 126b are configured to rotate around the rotating shaft 124a to which the sun gear 126a is connected. The internal gear 126e is fixed to the side portion 122b, and each planetary gear 126b is disposed inside the internal gear 126e. In one embodiment, the plurality of planetary gears 126b are connected to the sun gear 126a by a rotating support frame. In the drive force transmission mechanism 126, the rotation of the rotating shaft 124a causes the sun gear 126a to rotate (spin), and the rotation of the sun gear 126a causes each planetary gear 126b to rotate (revolve) around the sun gear 126a.

[0046] The elastic member 126d is a member for pressing the cleaning member 124c against the substrate support portion 16 that is the cleaning target by its restoring force. In the cleaning mechanism 124, the sun gear 126a and the plurality of planetary gears 126b are rotated while the cleaning member 124c is pressed against the substrate support portion 16 by the restoring force of the elastic member 126d. Thereby, each cleaning member 124c rotates, and the substrate support portion 16 is cleaned.

[0047] The cleaning assembly 120 further includes a seal member 128. The seal member 128 is configured to be disposed between the substrate support portion 16 and the cover 122. The seal member 128 is, for example, an O-ring. In one embodiment, the seal member 128 is provided on the lower surface of the side portion 122b. By including the seal member 128 in the cleaning assembly 120, the processing space S1 is more reliably separated by the cleaning space S2 and the space S3 outside the cover 122.

[0048] The cleaning assembly 120 further includes a communication unit 129. The communication unit 129 is configured to communicate with a control circuit MC configured to control the cleaning device CD. In one embodiment, the communication unit 129 is for wired communication with the control circuit MC. In this case, the communication unit 129 may consist of a cable electrically connected to the control circuit MC, and may receive commands from the control circuit MC via the cable. The cable may be provided, for example, along the exhaust passage 138. Alternatively, the communication unit 129 may be for wireless communication with the control circuit MC. In this case, the communication unit 129 may consist of an antenna that receives commands from the control circuit MC, and the antenna may be provided on the outer surface of the cover 122.

[0049] Returning to Figure 3, the cleaning device CD further comprises a discharge device 130. The discharge device 130 is located within the internal space 114. The discharge device 130 is connected to the containment space 112 via a valve 132 and to space 110q via a valve 134. The discharge device 130 is configured to reduce the pressure of the containment space 112 and space 110q.

[0050] The cleaning device CD further includes a particle measuring unit 136. The particle measuring unit 136 is configured to measure particles discharged from the cleaning space S2 via an exhaust passage 138 connected to the cleaning space S2. In one embodiment, the gas discharged from the cleaning space S2 is sent to the discharge device 130 through the discharge port 122o, the exhaust passage 138, and the particle measuring unit 136. If particles are present in the cleaning space S2, the particles are discharged from the discharge port 122o together with the gas present in the cleaning space S2. The particle measuring unit 136 is configured to measure the number of particles discharged together with the gas.

[0051] The cleaning device CD further comprises a gas supply mechanism 140. The gas supply mechanism 140 is configured to supply cleaning gas into the containment space 112 of the containment chamber 110. In one embodiment, the gas supply mechanism 140 is connected to an exhaust passage 138, and the cleaning gas is supplied into the containment space 112 via the exhaust passage 138.

[0052] The cleaning device CD further comprises a transport device 150. The transport device 150 is configured to move the cleaning assembly 120, which includes a cover 122 and a cleaning mechanism 124, between the storage space 112 and the processing space S1. The transport device 150 is located within the storage space 112. In one embodiment, the transport device 150 is a transport robot and includes a transport arm 150a. The transport device 150 receives power from a power source such as a battery and drives the transport arm 150a. The cleaning assembly 120 is attached to the tip of the transport arm 150a, and the cleaning assembly 120 is moved between the storage space 112 and the processing space S1 by driving the transport arm 150a.

[0053] The cleaning device CD further comprises a moving mechanism 160. The moving mechanism 160 has a main body 162 and a plurality of wheels 164. The main body 162 houses a power source such as a battery and a steering mechanism. The wheels 164 are rotated by the power source in the main body 162, and the cleaning device CD is moved in a direction controlled by the steering mechanism in the main body 162. The moving mechanism 160 may employ a type of mechanism other than wheels 164, such as a walking type, as long as it is possible to move the cleaning device CD.

[0054] The cleaning device CD further comprises a sensor 168 and a control unit 170. The sensor 168 is mounted on the outer wall of the housing chamber 110. The control unit 170 is located in the internal space 114. The sensor 168 senses the environment surrounding the cleaning device CD and outputs the sensing results to the control unit 170. The sensor 168 is, for example, an image sensor and outputs an image of the area around the cleaning device CD to the control unit 170. The control unit 170 may be a computer having a processor, memory and other storage devices, and a communication unit. The control unit 170 is configured to control various parts of the cleaning device CD. The control unit 170 moves the cleaning device CD by controlling the moving mechanism 160 using the sensing results of the sensor 168 in order to connect the cleaning device CD to the substrate processing device 10. The control unit 170 also controls the discharge device 130 and valves 132 and 134.

[0055] Hereinafter, with reference to Figures 5 to 10, the control by the control circuit MC (hereinafter also referred to as "control MT1") according to one exemplary embodiment will be described. Furthermore, the cleaning method performed by the control by the control circuit MC will be described. Figure 5 is a flowchart showing the control by the control circuit according to one exemplary embodiment. Figures 6, 7, 8, 9, and 10 are schematic diagrams showing one step of the control by the control circuit according to one exemplary embodiment.

[0056] As shown in Figure 5, control MT1 may include processes ST1 to ST12. Processes ST1 to ST12 may be executed in order. Control MT1 does not necessarily include processes ST1, ST2, ST6 to ST12.

[0057] (Step ST1) In step ST1, the cleaning device CD is moved so that, as shown in Figure 6, the processing chamber 12 of the substrate processing apparatus 10 and the housing chamber 110 of the cleaning device CD are connected. The processing chamber 12 and the housing chamber 110 are connected so that the openings 12o and 110o are aligned. In order to move the cleaning device CD in this way, the control circuit MC controls the cleaning device CD. Specifically, the movement mechanism 160 is controlled by the control unit 170, which receives a command from the control circuit MC, and the cleaning device CD is moved.

[0058] When the processing chamber 12 and the containment chamber 110 are connected, the side walls 12s, 12t, gate valve 12v, side wall 110s, and gate valve 110v define a sealed space. This sealed space includes space 12q and space 110q. In control MT1, this sealed space is depressurized by the discharge device 130. At the same time, the containment space 112 of the containment chamber 110 of the washing device CD is also depressurized by the discharge device 130. The discharge device 130 is controlled by the control circuit MC to depressurize the sealed space and the containment space 112. Specifically, the discharge device 130 is controlled by the control unit 170, which receives commands from the control circuit MC.

[0059] (Step ST2) In step ST2, the processing space S1 of the processing chamber 12 and the housing space 112 of the cleaning device CD are connected. In one embodiment, as shown in Figure 7, gate valves 12v and 116 are moved to connect the processing space S1 of the processing chamber 12 and the housing space 112 of the cleaning device CD. The openings 12o and 110o are opened by the movement of gate valves 12v and 116. Gate valves 12v and 116 are controlled by a control circuit MC for their movement. Gate valve 116 is controlled by a control unit 170 that receives a command from the control circuit MC.

[0060] (Step ST3) In step ST3, as shown in Figure 8, the cleaning assembly 120 is placed on the substrate support 16. In one embodiment, the transport arm 150a enters the processing space S1 of the processing chamber 12 from the storage space 112 of the storage chamber 110 of the cleaning device CD so that the cover 122 of the cleaning assembly 120 is placed on the substrate support 16. For this purpose, the transport arm 150a is controlled by the control circuit MC. Specifically, the transport device 150 is controlled by the control unit 170 which receives commands from the control circuit MC.

[0061] In step ST3, the cover 122 of the cleaning assembly 120 separates the processing space S1 of the processing chamber 12 into a cleaning space S2 surrounding the substrate support surface 16a of the substrate support portion 16 and a space S3 outside the cover 122. The cleaning space S2 in step ST3 is provided by the substrate support surface 16a and the inner surfaces of the top portion 122a and side portion 122b of the cover 122.

[0062] In one embodiment, the pressure in the cleaning space S2 and the pressure in the space S3 outside the cover 122 are set to be the same. The pressure in the cleaning space S2 and the pressure in the space S3 outside the cover 122 may be different from each other. Specifically, the discharge device 130 is controlled by the control unit 170, which receives a command from the control circuit MC, to adjust the pressure in the cleaning space S2. Similarly, the exhaust device 50 is controlled by the control unit 170, which receives a command from the control circuit MC, to adjust the pressure in the space S3 outside the cover 122.

[0063] In step ST3, as shown in Figure 9, the cleaning member 124c is pressed against the substrate support surface 16a by the restoring force of the elastic member 126d and the weight of the cleaning assembly 120. That is, in step ST3, the cleaning assembly 120 can be positioned on the substrate support portion 16 so that the cleaning member 124c is pressed against the substrate support surface 16a. The cleaning member 124c may also be pressed against the side of the substrate support portion 16 by the restoring force of the elastic member 126d and the weight of the cleaning assembly 120.

[0064] In one embodiment, in step ST3, an inert gas may be supplied to the space S3 outside the cover 122 and to the containment space 112. This supply of inert gas can be carried out by controlling a gas supply mechanism connected to the gas supply line 38a via a control circuit MC.

[0065] (Step ST4) In step ST4, the substrate support portion 16 is cleaned in the cleaning space S2. In step ST4, as shown in Figure 10, the substrate support portion 16 is cleaned in the cleaning space S2 by rotating the cleaning member 124c of the cleaning mechanism 124 of the cleaning assembly 120. In one embodiment, the cleaning member 124c is rotated while pressed against the substrate support surface 16a. That is, in one embodiment, the substrate support surface 16a is cleaned in the cleaning space S2 by rotating the cleaning member 124c while pressing it against the substrate support surface 16a. As described above, the cleaning member 124c may be pressed against the side of the substrate support portion 16. Therefore, in step ST4, the side of the substrate support portion 16 may be cleaned in the cleaning space S2 by rotating the cleaning member 124c which is pressed against the side of the substrate support portion 16. In control MT1, the focus ring 24 may be removed prior to step ST4. The focus ring 24 may be removed, for example, before step ST1.

[0066] Cleaning with the cleaning member 124c removes deposits adhering to the substrate support portion 16. These deposits may be by-products generated when processing the substrate using the substrate processing apparatus 10. The processing of the substrate by the substrate processing apparatus 10 includes, for example, etching the substrate.

[0067] The cleaning of the substrate support portion 16 by the cleaning member 124c is controlled by the control circuit MC. The cleaning assembly 120, which receives commands from the control circuit MC via the communication unit 129, controls the cleaning member 124c to perform cleaning of the substrate support portion 16.

[0068] (Step ST5) In step ST5, the gas in the cleaning space S2 is exhausted. In one embodiment, the gas in the cleaning space S2 is exhausted from the outlet 122o through the exhaust passage 138. At this time, the exhausted gas may contain particles. The exhaust device 130 is controlled by the control circuit MC for this exhaust. Specifically, the exhaust device 130 is controlled by the control unit 170 which receives a command from the control circuit MC. In one embodiment, steps ST4 and ST5 can be performed simultaneously.

[0069] (Step ST6) In step ST6, particles in the gas exhausted in step ST5 are measured. In one embodiment, the number of particles present in the exhausted gas is measured by the particle measuring unit 136. The particle measuring unit 136 is controlled by the control circuit MC for this measurement. The particle measuring unit 136 is controlled by the control unit 170 which receives commands from the control circuit MC. The particle measuring unit 136 transmits the number of particles measured to the control circuit MC via the control unit 170.

[0070] (Step ST7) In step ST7, it is determined whether the number of measured particles is below a threshold. In one embodiment, the control circuit MC determines whether the number of particles received from the particle measurement unit 136 is below a threshold. If it is determined that the number of measured particles is greater than the threshold, the control circuit MC does not proceed with the process and sends a command to the communication unit 129 of the cleaning assembly 120 to perform the cleaning of the substrate support unit 16 again. As a result, the series of processes from steps ST4 to ST6 are executed again. That is, steps ST4 to ST6 are executed repeatedly until the number of particles in the exhausted gas is below a threshold. If it is determined that the number of particles is below a threshold, the process proceeds to step ST8.

[0071] (Step ST8) In step ST8, a cleaning gas is supplied into the cleaning space S2. In one embodiment, a cleaning gas containing water is supplied into the cleaning space S2. In this case, water vapor may be supplied into the cleaning space S2 as the cleaning gas. Alternatively, the cleaning gas may contain a component that becomes an organic solvent when liquefied.

[0072] The supply of cleaning gas into the cleaning space S2 is controlled by the control circuit MC. Specifically, the control unit 170, which receives a command from the control circuit MC, controls the gas supply mechanism 140 to supply cleaning gas into the cleaning space S2.

[0073] (Step ST9) In step ST9, liquid is generated on the surface of the substrate support portion 16 by condensing the cleaning gas supplied in step ST8 within the cleaning space S2. In one embodiment, in step ST9, liquid is generated on the substrate support surface 16a and the side surface of the substrate support portion 16. As described above, in step ST8, the cleaning gas supplied may be a gas containing water or a gas containing a component that becomes an organic solvent when liquefied. Therefore, in step ST9, water or an organic solvent may be generated on the surface of the substrate support portion 16.

[0074] In one embodiment, in step ST9, the temperature of the substrate support portion 16 is set to a temperature below the liquefaction temperature of the cleaning gas. This cools the cleaning gas surrounding the substrate support portion 16, causing condensation. As a result, liquid is generated on the surface of the substrate support portion 16. The temperature of the substrate support portion 16 may be set to 0°C or lower.

[0075] The temperature of the substrate support section 16 is controlled by the control circuit MC. Specifically, the chiller unit 27, upon receiving a command from the control circuit MC, controls the temperature of the refrigerant circulating between the flow path 18f and the chiller unit 27, thereby adjusting the temperature of the substrate support section 16.

[0076] (Step ST10) In step ST10, the substrate support portion 16 is wet-cleaned in the cleaning space S2. In step ST10, the substrate support portion 16 is cleaned while the liquid generated on the surface of the substrate support portion 16 in step ST9 is still present. That is, the liquid generated on the surface of the substrate support portion 16 in step ST9 functions as a cleaning solution in wet cleaning.

[0077] In one embodiment, in step ST10, the substrate support portion 16 is cleaned by rotating the cleaning member 124c, similar to step ST4. The cleaning member 124c can be rotated while pressed against the substrate support surface 16a where the liquid has been generated. That is, by pressing the cleaning member 124c against the substrate support surface 16a where the liquid has been generated and rotating the cleaning member 124c, the substrate support surface 16a can be cleaned in the cleaning space S2. In step ST10, similar to step ST4, the side portion of the substrate support portion 16 may be cleaned in the cleaning space S2 by rotating the cleaning member 124c which is pressed against the side of the substrate support portion 16 where the liquid has been generated. Note that the areas of the substrate support portion 16 cleaned in step ST10 and the areas cleaned in step ST4 may be different or the same.

[0078] This wet cleaning with the cleaning member 124c further removes deposits adhering to the substrate support portion 16. In other words, by performing step ST10 in addition to step ST4, it is possible to remove deposits that could not be completely removed in step ST4. The wet cleaning of the substrate support portion 16 with the cleaning member 124c is controlled by the control circuit MC, similar to the cleaning of the substrate support portion 16 by the cleaning member 124c in step ST4.

[0079] (Step ST11) In step ST11, the liquid in the cleaning space S2 is discharged from the cleaning space S2. In one embodiment, the liquid in the cleaning space S2 is discharged from the outlet 122o through the exhaust passage 138. The discharge device 130 is controlled by the control circuit MC for this discharge. Specifically, the discharge device 130 is controlled by the control unit 170 which receives commands from the control circuit MC.

[0080] (Step ST12) In step ST12, the temperature of the substrate support portion 16 is increased. In step ST12, the temperature of the substrate support portion 16 is increased to vaporize the liquid generated on the surface of the substrate support portion 16. As a result, the liquid present on the surface of the substrate support portion 16 vaporizes, and the vaporized liquid gas is generated in the cleaning space S2. In one embodiment, steps ST11 and ST12 can be performed simultaneously.

[0081] The temperature of the substrate support portion 16 may be set to 60°C or higher. The temperature adjustment of the substrate support portion 16 in step ST12 is controlled by the control circuit MC, similar to the temperature adjustment of the substrate support portion 16 in step ST9. In one embodiment, steps ST11 and ST12 may be performed simultaneously.

[0082] According to the cleaning apparatus CD described above, the cover 122 is configured to separate the processing space S1 within the processing chamber 12 of the substrate processing apparatus 10 into a cleaning space S2 surrounding the substrate support surface 16a of the substrate support part 16 and a space S3 outside the cover 122. Furthermore, according to control MT1, when cleaning the substrate support part 16, the cover 122 separates the processing space S1 into the cleaning space S2 and the space S3 outside the cover 122. Therefore, when cleaning the substrate support part 16, the release of particles generated in the cleaning space S2 and deposits attached to the substrate support part 16 into the space S3 outside the cover 122 is suppressed. As a result, contamination of the processing chamber 12 can be suppressed when cleaning the substrate support part 16.

[0083] When cleaning the substrate support section 16 using the cleaning apparatus CD, which includes a containment chamber 110 and a transport device 150, the cleaning is performed with the processing chamber 12 and the containment chamber 110 connected. In other words, by using the cleaning apparatus CD, it is possible to clean the substrate support section 16 without exposing the processing chamber 12 to the atmosphere. Therefore, a decrease in the operating rate of the substrate processing apparatus 10 can be suppressed.

[0084] Hereinafter, with reference to Figure 11, another example of a substrate processing apparatus included in a substrate processing system according to one exemplary embodiment will be described. Figure 11 is a schematic diagram showing another example of a substrate processing apparatus included in the substrate processing system shown in Figure 1. The substrate processing apparatus 10A shown in Figure 11 is a capacitively coupled plasma processing apparatus and can be used as a substrate processing apparatus in the substrate processing system PS. Here, the differences between the substrate processing apparatus 10A shown in Figure 11 and the substrate processing apparatus 10 will be explained, and redundant explanations will be omitted.

[0085] In the substrate processing apparatus 10A, the processing chamber 12 includes a side wall 12sA and a side wall 12tA. The side wall 12sA and the side wall 12tA can be formed integrally. The entire integrally formed side wall 12sA and side wall 12tA has a substantially cylindrical shape. The side wall 12sA provides a passage 12p. The side wall 12tA does not provide an opening 12o. That is, the processing chamber 12 does not include a gate valve 12v. Therefore, a portion of the side wall 12tA does not include an inner wall 12i and an outer wall 12e and has a single-layer structure.

[0086] In the substrate processing apparatus 10A, the gas supply line 28 is configured not only to supply heat transfer gas but also to discharge gas from the cleaning space S2. Furthermore, the gas supply line 28 is provided with a particle measuring unit 136A. The particle measuring unit 136A is configured to measure the number of particles discharged along with the gas, similar to the particle measuring unit 136. In other words, in one embodiment, the substrate processing apparatus 10A may include a particle measuring unit 136A.

[0087] In the substrate processing apparatus 10A, a plurality of gas diffusion chambers are provided inside the support 36. In one embodiment, gas diffusion chambers 36a1 and 36a2 are provided inside the support 36. Gas diffusion chamber 36a1 is separated from gas diffusion chamber 36a2 within the support 36. Gas diffusion chamber 36a1 is provided above the central region of the substrate support 16. The planar shape of gas diffusion chamber 36a1 when viewed in the vertical direction is approximately circular. Gas diffusion chamber 36a2 is provided above the edge region of the substrate support 16 and extends circumferentially outside gas diffusion chamber 36a1. Gas diffusion chamber 36a2 is separated from gas diffusion chamber 36a1 within the support 36. The planar shape of gas diffusion chamber 36a2 when viewed in the vertical direction is a band extending between two concentric circles.

[0088] A gas supply line 38a1 is connected to the gas diffusion chamber 36a1. The gas supply line 38a1 is configured to supply gas from the first gas supply mechanism, such as cleaning gas, into the cleaning space S2. A gas supply line 38a2 is connected to the gas diffusion chamber 36a2. The gas supply line 38a2 is configured to supply gas from the second gas supply mechanism into the processing space S1 or into the space S3 outside the cover 122.

[0089] The following describes a cleaning apparatus according to another exemplary embodiment, with reference to Figure 12. Figure 12 is a schematic diagram showing a cleaning apparatus according to another exemplary embodiment. Here, the differences between the cleaning apparatus CDA shown in Figure 12 and the cleaning apparatus CD will be explained, and redundant explanations will be omitted.

[0090] The cleaning device CDA comprises a cleaning assembly 120A and does not include a storage chamber 110, a discharge device 130, a gas supply mechanism 140, a transport device 150, a moving mechanism 160, a sensor 168, and a control unit 170. In one embodiment, the cleaning device CDA may consist only of the cleaning assembly 120A.

[0091] The cleaning assembly 120A includes a cover 122A and a cleaning mechanism 124A. In one embodiment, the cover 122A includes a top portion 122aA and a side portion 122b. The cover 122A includes a gas supply port 122oA. In the example shown in Figure 12, the cover 122A includes two gas supply ports 122oA. The gas supply ports 122oA are for supplying gas from the gas diffusion chamber 36a1 into the cleaning space S2. The gas supply ports 122oA are, for example, through holes provided in the top portion 122a.

[0092] The cleaning mechanism 124A includes a rotating shaft 124aA, a drive unit 124bA, a cleaning member 124c, and a drive force transmission mechanism 126, but does not include a link belt 124d, a case member 124e, a case member 124f, and a sealing member 124g. In one embodiment, the cleaning mechanism 124A may include only the rotating shaft 124aA, the drive unit 124bA, the cleaning member 124c, and the drive force transmission mechanism 126. The rotating shaft 124aA may be, for example, the shaft of the drive unit 124bA. In one embodiment, the rotating shaft 124aA extends downward from the drive unit 124bA.

[0093] The drive unit 124bA is configured to rotate the rotating shaft 124aA. Specifically, the drive unit 124bA generates a driving force to rotate the rotating shaft 124aA. The drive unit 124bA is connected to a first power supply 62 via a power supply line (not shown). One end of the power supply line is connected to the drive unit 124bA, and the other end of the power supply line is connected to the first power supply 62. In this way, in the cleaning apparatus CDA, power is supplied to the drive unit 124bA from the first power supply 62 provided in the substrate processing apparatus 10A.

[0094] Hereinafter, with reference to Figures 13 and 14, control by the control circuit MC (hereinafter also referred to as "control MT2") according to another exemplary embodiment will be described. Figure 13 is a flowchart showing control by the control circuit according to another exemplary embodiment. Figure 14 is a schematic diagram showing one step of control by the control circuit according to another exemplary embodiment. Here, we will explain the differences between control MT2 shown in Figure 13 and control MT1, and omit redundant explanations.

[0095] As shown in Figure 13, control MT2 may include processes ST21 to ST30. Processes ST21 to ST30 may be executed in order. Control MT2 does not necessarily include processes ST24 to ST30.

[0096] (Step ST21) In step ST21, as shown in Figure 14, the cleaning assembly 120 is placed on the substrate support 16. In one embodiment, with the upper part of the processing chamber 12 open, the cleaning device CDA is transported into the processing chamber 12. The opening of the processing chamber 12 and the transport of the cleaning device CDA can be done manually. After the cleaning assembly 120 is placed, the upper part of the processing chamber 12 can be closed.

[0097] In step ST21, the cover 122 of the cleaning assembly 120 separates the processing space S1 of the processing chamber 12 into a cleaning space S2 surrounding the substrate support surface 16a of the substrate support portion 16 and a space S3 outside the cover 122. The cleaning space S2 in step ST21 is provided by the substrate support surface 16a, the inner surfaces of the top portion 122a and side portion 122b of the cover 122, and the lower surface of the electrode plate 34.

[0098] (Step ST22) Step ST22 involves cleaning the substrate support portion 16 in the cleaning space S2. Step ST22 can be performed in the same manner as step ST4. In control MT2, the focus ring 24 may be removed prior to step ST22. The focus ring 24 may be removed, for example, when the processing chamber 12 is opened in step ST21, or it may be removed before step ST21.

[0099] (Step ST23) In step ST23, the gas in the cleaning space S2 is exhausted. In one embodiment, the gas in the cleaning space S2 is discharged through the gas supply line 28. The discharge of the gas in the cleaning space S2 via the gas supply line 28 is controlled by the control circuit MC. Specifically, the heat transfer gas supply mechanism connected to the gas supply line 28 is controlled by the control circuit MC to exhaust the gas in the cleaning space S2.

[0100] (Step ST24) In step ST24, particles in the gas exhausted in step ST23 are measured. In one embodiment, the number of particles present in the exhausted gas is measured by the particle measuring unit 136A. The particle measuring unit 136A is controlled by the control circuit MC for this measurement. The particle measuring unit 136A transmits the measured number of particles to the control circuit MC.

[0101] (Step ST25) In step ST25, it is determined whether the number of measured particles is below a threshold. Step ST25 can be performed in the same manner as step ST7.

[0102] (Step ST26) In step ST26, cleaning gas is supplied into the cleaning space S2. The cleaning gas supplied into the cleaning space S2 in step ST26 may be the same as the cleaning gas supplied into the cleaning space S2 in step ST8.

[0103] In process ST26, the supply of cleaning gas into the cleaning space S2 is controlled by the control circuit MC. Specifically, the first gas supply mechanism connected to the gas supply line 38a1 is controlled by the control circuit MC to supply cleaning gas into the cleaning space S2.

[0104] (Step ST27) In step ST27, the cleaning gas supplied in step ST26 is condensed in the cleaning space S2, thereby generating liquid on the surface of the substrate support portion 16. Step ST27 can be performed in the same manner as step ST9.

[0105] (Step ST28) In step ST28, the substrate support portion 16 is wet-cleaned in the cleaning space S2. Step ST28 can be performed in the same manner as step ST10.

[0106] (Step ST29) In step ST29, the liquid in the cleaning space S2 is discharged from the cleaning space S2. In one embodiment, the liquid in the cleaning space S2 is discharged through the gas supply line 28. The discharge of the liquid in the cleaning space S2 via the gas supply line 28 is controlled by the control circuit MC. Specifically, the heat transfer gas supply mechanism connected to the gas supply line 28 is controlled by the control circuit MC to discharge the liquid in the cleaning space S2.

[0107] (Step ST30) In step ST30, the temperature of the substrate support portion 16 is increased. Step ST30 can be performed in the same manner as step ST12. In one embodiment, steps ST29 and ST30 can be performed simultaneously.

[0108] Similar to the cleaning device CD and control MT1, the cleaning device CDA and control MT2 suppress the release of particles generated in the cleaning space S2 and deposits attached to the substrate support 16 into the space S3 outside the cover 122 during cleaning of the substrate support 16. As a result, contamination of the processing chamber 12 during cleaning of the substrate support 16 can be suppressed.

[0109] When cleaning the substrate support section 16 using the cleaning device CDA, the upper part of the processing chamber 12 is opened in step ST21, but after the cleaning assembly 120 is placed, the upper part of the processing chamber 12 is closed. Therefore, when cleaning the substrate support section 16 using the cleaning device CDA, it is possible to reduce the time that the processing chamber 12 is exposed to the atmosphere. Consequently, by using the cleaning device CDA, it is possible to suppress a decrease in the operating rate of the substrate processing device 10.

[0110] Hereinafter, a cleaning apparatus according to yet another exemplary embodiment will be described with reference to Figures 15, 16, and 17. Figure 15 is a schematic diagram showing a cleaning apparatus according to yet another exemplary embodiment. Figure 16 is a schematic diagram showing another exemplary cleaning assembly. Figure 17 is a schematic diagram showing the configuration of the cleaning assembly and the transport arm in the cleaning apparatus shown in Figure 15. Here, the differences between cleaning apparatus CDB shown in Figures 15 to 17 and cleaning apparatus CD will be explained, and redundant explanations will be omitted. Specifically, cleaning apparatus CDB is generally similar to or the same as cleaning apparatus CD, but differs from cleaning apparatus CD, for example, in the configuration of the cleaning assembly.

[0111] The cleaning process using the CDB cleaning device also removes deposits adhering to the substrate support portion 16. In the cleaning process using the CDB cleaning device, gas is supplied into the cleaning space S2, and the flow of the gas in the cleaning space S2 is used to remove the deposits. In one embodiment, the gas flowing into the cleaning space S2 is supplied from a gas supply mechanism via a gas supply line 38a, a gas diffusion chamber 36a, and a gas discharge hole 34a. In this example, in the substrate processing apparatus 10, the upper electrode 30 is configured to be movable in the vertical direction, and when supplying gas into the cleaning space S2, it is positioned to sandwich the cleaning assembly 120B, which will be described later, between itself and the substrate support portion 16.

[0112] The cleaning device CDB includes a cleaning assembly 120B. As shown in Figure 16, the cleaning assembly 120B includes a cover 122B and a cleaning mechanism 124B. As described above, during cleaning by the cleaning device CDB, gas is supplied into the cleaning space S2 to remove deposits adhering to the substrate support portion 16. Therefore, the cover 122B of the cleaning device CDB includes a gas supply port H1 for supplying the gas into the cleaning space S2 and a gas outlet H2 for discharging the gas supplied into the cleaning space S2.

[0113] The cover 122B, like the cover 122, defines the cleaning space S2. As described above, when supplying gas into the cleaning space S2, the upper electrode 30 is positioned to sandwich the cleaning assembly 120B between itself and the substrate support portion 16. Therefore, the cleaning space S2 defined by the cover 122B is defined by the cover 122B, the substrate support surface 16a, and the upper electrode 30 when the cover 122B is placed on the substrate support portion 16 and the upper electrode 30 is positioned as described above.

[0114] In the cleaning apparatus CDB, the gas supply port H1 and the gas outlet H2 are arranged to provide a gas flow path GF within the cleaning space S2 and between the gas supply port H1 and the gas outlet H2, which forms a gas flow along the surface of the substrate support portion 16 (substrate support surface 16a). In the cleaning apparatus CDB, the gas supplied from the gas supply port H1 into the cleaning space S2 flows through the gas flow path GF, thereby removing deposits attached to the substrate support portion 16.

[0115] In one embodiment, the cover 122B includes a top portion 122aB and a side portion 122bB. The top portion 122aB has the same configuration as the top portion 122a, plus a gas supply port H1. The side portion 122bB has the same configuration as the side portion 122b, plus a gas outlet port H2. For example, the gas supply port H1 is a through-hole provided in the top portion 122a, and the gas outlet port H2 is a through-hole provided in the side portion 122b. In the example shown in Figure 16, the gas supply port H1 and the gas outlet port H2 open in different directions from each other.

[0116] In one embodiment, when the cover 122B is placed on the substrate support portion 16, the gas supply port H1 is positioned such that, when viewed from above the substrate support portion 16, the center of the substrate support portion 16 is located inside the gas supply port H1. That is, the gas supply port H1 opens above the center of the substrate support surface 16a. In one embodiment, when the cover 122B is placed on the substrate support portion 16, the gas outlet port H2 is positioned such that, when viewed from above the substrate support portion 16, it is located on the periphery of the electrostatic chuck 20. That is, the gas outlet port H2 opens on the periphery of the electrostatic chuck 20, i.e., outside the substrate support surface 16a. In one example, the cover 122B may include a plurality of gas outlet ports H2. If the cover 122B includes a plurality of gas outlet ports H2, the plurality of gas outlet ports H2 may be arranged, for example, along the circumferential direction of the circular substrate support surface 16a.

[0117] In one embodiment, the gas outlet H2 included in the cover 122B can also be used to exhaust gas from the cleaning space S2. That is, the gas outlet H2 can also function as an outlet 122o in the cover 122. When the gas outlet H2 functions as an outlet 122o, the gas exhausted from the gas outlet H2 is discharged to the outside, for example, via the exhaust pipe 52 and exhaust device 50 of the substrate processing apparatus 10. For this reason, in the example shown in Figure 16, the cover 122B does not include an outlet 122o. Accordingly, as shown in Figure 15, the cleaning apparatus CDB does not have a particle measuring unit 136, and the cleaning apparatus CDB is not provided with an exhaust passage 138 connecting the outlet 122o and the exhaust device 130. In a configuration in which the cleaning apparatus CDB does not have a particle measuring unit 136, for example, another particle measuring device may be provided between the exhaust pipe 52 and the exhaust device 50 of the substrate processing apparatus 10.

[0118] The cleaning mechanism 124B includes a rotating shaft 124aB. The rotating shaft 124aB is, for example, a shaft. In one embodiment, the rotating shaft 124aB is inserted into a gas supply port H1. In this example, the rotating shaft 124aB has a cylindrical shape. In one embodiment, the internal space defined by the inner circumferential surface of the rotating shaft 124aB provides a part of the gas flow path GF for the gas supplied into the cleaning space S2.

[0119] In one embodiment, the cleaning mechanism 124B includes a drive unit 124b, a link belt 124d, and a power supply 124p, similar to the cleaning mechanism 124. In the cleaning mechanism 124B, power is supplied from the power supply 124p to the drive unit 124b, and the powered drive unit 124b generates a driving force. The driving force generated by the drive unit 124b is transmitted to the rotating shaft 124a via the link belt 124d.

[0120] In one embodiment, the cleaning mechanism 124B also includes a motor 124b1 and a shaft 124b2 in the drive unit 124b. The motor 124b1 is located on the outside of the cover 122B. For example, the motor 124b1 is located adjacent to the side portion 122bB. In the example shown in Figure 16, the motor 124b1 is located adjacent to the side portion 122bB on the side opposite to the gas outlet H2.

[0121] In the cleaning mechanism 124B, a case member 124e is provided around the motor 124b1, and the motor 124b1 is protected by the case member 124e. The shaft 124b2 extends upward through a hole formed in the upper part of the case member 124e, and a sealing member 124g is provided at the edge of the hole.

[0122] Furthermore, the arrangement of the motor 124b1 in the cleaning assembly 120B shown in Figure 16 is the opposite of the arrangement of the motor 124b1 in the cleaning assembly 120 shown in Figure 4. That is, in the cleaning assembly 120B, the motor 124b1 is located on the transport arm 150a side. Accordingly, in the cleaning device CDB, a recess 150a1 is formed in the transport arm 150a where the motor 124b1 and the case member 124e are located. Therefore, when the cleaning assembly 120B is held by the transport arm 150a, the motor 124b1 and the case member 124e are located within the recess 150a1, as shown in Figure 17.

[0123] In one embodiment, a pulley is attached to the shaft 124b2, and the link belt 124d connects the pulley to a pulley attached to the rotating shaft 124a. As a result, the driving force generated by the drive unit 124b is transmitted to the rotating shaft 124aB, causing the rotating shaft 124aB to rotate. A case member 124f is provided above the link belt 124d, and the shaft 124b2 and the link belt 124d are protected by the case member 124f.

[0124] In the example shown in Figure 16, the case member 124f extends above the rotating shaft 124aB. In this example, a through hole is formed in the portion of the case member 124f located above the rotating shaft 124aB, communicating with the internal space of the rotating shaft 124aB. This through hole in the case member 124f provides a portion of the gas flow path GF.

[0125] In one embodiment, a mounting member 124h is provided on the case member 124f on which the upper electrode 30 is placed when the upper electrode 30 is positioned to sandwich the cleaning assembly 120B between the mounting member 16 and the substrate support portion 16. Furthermore, a sealing member 124i is provided on the upper surface of the mounting member 124h. The sealing member 124i is configured to be positioned between the mounting member 124h and the lower surface of the electrode plate 34.

[0126] In the cleaning mechanism 124B, the cleaning member 124c is attached to the rotating shaft 124aB. In one embodiment, the cleaning member 124c is attached to the rotating shaft 124aB via the drive force transmission mechanism 126. In the cleaning mechanism 124B, the sun gear 126a has a through hole that communicates with the internal space of the rotating shaft 124aB. The through hole may be formed, for example, at the center of the rotating shaft 124aB. The through hole in the sun gear 126a provides a part of the gas flow path GF. In the example shown in Figure 16, the cleaning member 124c is not attached to the sun gear 126a, and the cleaning member 124c is attached only to the planetary gear 126b.

[0127] In one embodiment, the cleaning mechanism 124B further includes exhaust pipes P1 and P2. Exhaust pipes P1 and P2 are exhaust pipes for discharging gas supplied from a gas supply port H1 into the cleaning space S2 through a gas outlet H2. In the example shown in Figure 16, exhaust pipe P1 is provided on the side portion 122bB of the cover 122B, and the gas outlet H2 constitutes the open end of exhaust pipe P1. Exhaust pipe P1 extends horizontally, for example, along the top portion 122aB.

[0128] The exhaust pipe P2 is provided on at least one of the multiple cleaning members 124c. In one embodiment, the exhaust pipe P2 penetrates the cleaning member 124c and extends along the side portion 122bB. The exhaust pipe P2 is configured to communicate with the exhaust pipe P1 when the rotational position of the cleaning member 124c around the central axis of the rotation shaft 124aB reaches a predetermined position. Figure 16 shows the state when the rotational position of the cleaning member 124c reaches the predetermined position, and shows that the exhaust pipe P2, which penetrates the cleaning member 124c and extends upward, is in communication with the exhaust pipe P1.

[0129] In one embodiment, the exhaust pipe P1 may be provided with a filter F1 for collecting deposits removed from the substrate support portion 16. For example, the mesh size of the filter F1 may be set based on the size of the deposits. Specifically, the mesh size of the filter F1 may be set to be smaller than the size of the deposits. The filter F1 may be provided in the exhaust pipe P2.

[0130] Exhaust pipes P1 and P2 provide a portion of the gas flow path GF. In a configuration in which exhaust pipe P2 is provided through the cleaning member 124c, the space created between the cleaning member 124c and the substrate support surface 16a of the substrate support portion 16 also provides a portion of the gas flow path GF. Thus, in one embodiment, the gas flow path GF is provided by the internal space of the rotating shaft 124aB, the through hole of the case member 124f, the through hole of the sun gear 126a, the space created between the cleaning member 124c and the substrate support surface 16a, and the exhaust pipes P1 and P2.

[0131] In one embodiment, the cleaning assembly 120B includes a sealing member 128 and a communication unit 129. The sealing member 128 is provided, for example, on the lower surface of the side portion 122bB. The communication unit 129 is provided, for example, on the lower surface of the case member 124f.

[0132] The following describes control by a control circuit MC (hereinafter also referred to as "control MT3") according to yet another exemplary embodiment, with reference to Figures 18 to 25. Figure 18 is a flowchart showing control by a control circuit according to yet another exemplary embodiment. Figures 19 to 25 are schematic diagrams showing one step of control by a control circuit according to yet another exemplary embodiment. Here, we will explain the differences between control MT3 shown in Figure 18 and control MT1, and omit redundant explanations.

[0133] As shown in Figure 18, control MT3 may include processes ST41 to ST54. Processes ST41 to ST54 may be executed in order. Control MT3 does not necessarily include processes ST41, ST42, ST46, ST48 to ST54.

[0134] (Step ST41) In step ST41, the cleaning device CDB is moved so that the processing chamber 12 of the substrate processing device 10 and the housing chamber 110 of the cleaning device CDB are connected, as shown in Figure 19. Step ST41 can be performed in the same manner as step ST1.

[0135] (Step ST42) In step ST42, as shown in Figure 20, the processing space S1 of the processing chamber 12 and the housing space 112 of the washing device CDB are connected. Step ST42 can be performed in the same manner as step ST2.

[0136] (Step ST43) In step ST43, as shown in Figure 21, the cleaning assembly 120B is placed on the substrate support portion 16. Step ST43 can be performed in the same manner as step ST3. That is, the transport arm 150a enters the processing space S1 of the processing chamber 12 from the housing space 112 of the housing chamber 110 of the cleaning device CDB so that the cover 122B of the cleaning assembly 120B is placed on the substrate support portion 16. In step ST43, as shown in Figure 22, the cleaning member 124c is pressed against the substrate support surface 16a by the restoring force of the elastic member 126f and the weight of the cleaning assembly 120B. As described above, in the cleaning device CDB, the cover 122B includes the gas supply port H1, so at the end of step ST43, the processing space S1 in the processing chamber 12 is not separated into the cleaning space S2 and the space S3 outside the cover 122B.

[0137] (Step ST44) In step ST44, the upper electrode 30 is lowered as shown in Figure 23. In one embodiment, the upper electrode 30 is positioned to sandwich the cleaning assembly 120B between itself and the substrate support portion 16. In step ST44, for example, the upper electrode 30 is lowered until the lower surface of the electrode plate 34 contacts the sealing member 124i. This closes the gas supply port H1 with the upper electrode 30, separating the processing space S1 into a cleaning space S2 and a space S3. That is, the cleaning space S2 in step ST44 is provided by the substrate support surface 16a, the inner surfaces of the top portion 122aB and the side portion 122bB of the cover 122B, and the lower surface of the electrode plate 34.

[0138] (Step ST45) In step ST45, the substrate support portion 16 is cleaned in the cleaning space S2. Step ST45 can be performed in the same manner as step ST4. That is, in step ST45, as shown in Figure 24, the substrate support portion 16 is cleaned in the cleaning space S2 by rotating the cleaning member 124c of the cleaning mechanism 124B of the cleaning assembly 120B.

[0139] (Step ST46) In step ST46, gas is supplied into the cleaning space S2. In step ST46, the gas is supplied into the cleaning space S2 from the gas supply port H1 of the cover 122B. In one embodiment, the gas is supplied into the cleaning space S2 from the gas diffusion chamber 36a via the gas supply port H1. The gas may be, for example, an inert gas. In one embodiment, the supply of gas into the cleaning space S2 is performed while a space is created between the cleaning member 124c and the substrate support surface 16a, as shown in Figure 25. In step ST46, in order to create the space, for example, the cleaning assembly 120B may be slightly raised by the transport arm 150a to reduce the force pressing the cleaning member 124c against the substrate support surface 16a.

[0140] (Step ST47) In step ST47, deposits adhering to the substrate support portion 16 are removed. In one embodiment, steps ST46 and ST47 are performed simultaneously. As described above, the supply of gas into the cleaning space S2 in step ST46 is performed while a space exists between the cleaning member 124c and the substrate support surface 16a. As a result, the space between the cleaning member 124c and the substrate support surface 16a provides a part of the gas flow path GF, and the deposits adhering to the substrate support portion 16 are carried to the exhaust pipe P1 along with the gas flowing through the space. The deposits carried to the exhaust pipe P1 are then collected by a filter F1 located inside the exhaust pipe P1, or discharged into space S3 from the gas outlet H2. In the cleaning of the substrate support portion 16 by the cleaning device CDB, deposits adhering to the substrate support portion 16 are removed in this manner. When the deposits are discharged into space S3, they can be discharged outside the processing chamber 12 via the exhaust pipe 52.

[0141] Furthermore, in step ST47, the gas in the cleaning space S2 is exhausted along with the gas supplied into the cleaning space S2 from the gas supply port H1. In one embodiment, the gas in the cleaning space S2 is exhausted from the gas outlet H2 through the exhaust pipes P1 and P2. At this time, the exhausted gas may contain particles. The gas exhausted from the gas outlet H2 can be discharged outside the processing chamber 12 via the exhaust pipe 52.

[0142] (Step ST48) In step ST48, particles in the exhausted gas are measured. In one embodiment, the number of particles present in the exhausted gas is measured by a particle measuring device installed between the exhaust pipe 52 of the substrate processing apparatus 10 and the exhaust device 50. The particle measuring device is controlled, for example, by a control circuit MC for this measurement. The particle measuring device transmits the measured number of particles to the control circuit MC.

[0143] (Step ST49) In step ST49, it is determined whether the number of measured particles is below a threshold. Step ST49 may be performed in the same way as step ST6.

[0144] (Step ST50) In step ST50, cleaning gas is supplied into the cleaning space S2. The cleaning gas supplied into the cleaning space S2 in step ST50 may be the same as the cleaning gas supplied into the cleaning space S2 in step ST6.

[0145] In process ST50, the supply of cleaning gas into the cleaning space S2 is controlled by the control circuit MC. Specifically, the gas supply mechanism connected to the gas supply line 38a is controlled by the control circuit MC to supply cleaning gas into the cleaning space S2.

[0146] (Step ST51) In step ST51, the cleaning gas supplied in step ST50 is condensed in the cleaning space S2, thereby generating liquid on the surface of the substrate support portion 16. Step ST51 can be performed in the same manner as step ST9.

[0147] (Step ST52) In step ST52, the substrate support portion 16 is wet-cleaned in the cleaning space S2. Step ST52 can be performed in the same manner as step ST10.

[0148] (Step ST53) In step ST53, the liquid in the cleaning space S2 is discharged from the cleaning space S2. In one embodiment, the liquid in the cleaning space S2 is discharged through the gas supply line 28. The discharge of the liquid in the cleaning space S2 via the gas supply line 28 is controlled by the control circuit MC. Specifically, the heat transfer gas supply mechanism connected to the gas supply line 28 is controlled by the control circuit MC to discharge the liquid in the cleaning space S2.

[0149] (Step ST54) In step ST54, the temperature of the substrate support portion 16 is increased. Step ST54 can be performed in the same manner as step ST12. In one embodiment, steps ST53 and ST54 can be performed simultaneously.

[0150] Similar to the cleaning device CD and control MT1, the cleaning device CDB and control MT3 suppress the release of particles generated in the cleaning space S2 and deposits attached to the substrate support 16 into the space S3 outside the cover 122B during cleaning of the substrate support 16. As a result, contamination of the processing chamber 12 during cleaning of the substrate support 16 can be suppressed.

[0151] The following describes an example of a control circuit (MC).

[0152] Figure 26 illustrates a block diagram of a computer (a type of circuit) capable of implementing the various control modes described herein. Furthermore, the control modes of this disclosure can be implemented as a system, method, and / or computer program product. The computer program product may include a computer-readable storage medium on which computer-readable program instructions causing one or more processing units to execute the modes of this embodiment are recorded.

[0153] A computer-readable storage medium may be a tangible device capable of storing instructions used by an instruction execution device (processor). A computer-readable storage medium may, but is not limited to, an electronic storage device, a magnetic storage device, an optical storage device, an electromagnetic storage device, a semiconductor storage device, or any suitable combination thereof. More specific examples of computer-readable storage media include, but are not exhaustive, flexible disks, hard disks, solid-state drives (SSDs), random-access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or Flash), static random-access memory (SRAM), compact disks (CDs or CD-ROMs), digital multipurpose disks (DVDs), memory cards or memory sticks (and suitable combinations thereof). In this disclosure, a computer-readable storage medium should not be interpreted as a transient signal itself, such as, for example, radio waves or other freely propagating electromagnetic waves, electromagnetic waves propagating through waveguides or other transmission media (e.g., optical pulses passing through optical fiber cables), or electrical signals transmitted via wires.

[0154] The computer-readable program instructions described in this disclosure can be downloaded from a computer-readable storage medium to a suitable computing device or processing device, or they can be downloaded to an external computer or external storage device via a global network (i.e., the Internet), a local area network, a wide area network, and / or a wireless network. Networks include transmission copper wires, optical fiber, wireless communications, routers, firewalls, switches, gateway computers, and / or edge servers. The network adapter card or network interface of each computing device or processing device can receive computer-readable program instructions from the network, transfer those computer-readable program instructions, and store them in a computer-readable storage medium within the computing device or processing device.

[0155] Computer-readable program instructions for performing the operations of the Disclosure may include machine language instructions and / or microcode. These instructions can be compiled or interpreted from source code written in any combination of one or more programming languages, including assembly language, Basic, Fortran, Java®, Python, R, C, C++, C#, etc. Computer-readable program instructions can be fully executed on a user's personal computer, notebook computer, tablet, or smartphone, or may be fully executed on a remote computer or computer server, or on any combination of these computing devices. The remote computer or computer server may be connected to one or more of the user's devices via a computer network, including a local area network, a wide area network, or a global network (i.e., the Internet). Alternatively, electronic circuits, including, for example, programmable logic circuits, field-programmable gate arrays (FPGAs), or programmable logic arrays (PLAs), may be configured or customized to execute computer-readable program instructions using information from the computer-readable program instructions and implement embodiments of the Disclosure.

[0156] This specification will describe aspects of the present disclosure with reference to flowcharts and block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the present disclosure. Those skilled in the art will understand that each block in the flowcharts and block diagrams, as well as combinations of blocks in the flowcharts and block diagrams, can be implemented by computer-readable program instructions.

[0157] Computer-readable program instructions capable of implementing the systems and methods described in this disclosure may be supplied to one or more processors (and / or one or more cores within a processor) of a general-purpose computer, a dedicated computer, or other programmable device. This makes it possible to generate a machine that constructs a system for implementing the functions specifically shown in the flowcharts and block diagrams of this disclosure, through instructions executed via the processors of the computer or other programmable device. These computer-readable program instructions may also be stored in a computer-readable storage medium that can instruct the computer, programmable device, and / or other device to function in a particular manner. The computer-readable storage medium storing the instructions is a product containing instructions that implement the embodiments of the functions specifically shown in the flowcharts and block diagrams of this disclosure.

[0158] Furthermore, computer-readable program instructions can be loaded into a computer, another programmable device, or other device, and a series of operations can be executed on that computer, other programmable device, or other device to realize a computer implementation process. Therefore, the functions specifically shown in the flowcharts and block diagrams of this disclosure can be realized by instructions executed on a computer, another programmable device, or other device.

[0159] Figure 26 is a functional block diagram showing a network system 800 in which one or more computers and servers are connected to a network. In one embodiment, the hardware and software environments illustrated in Figure 26 may serve as an exemplary platform for implementing the software and / or methods relating to the present disclosure.

[0160] Referring to Figure 26, the network system 800 may include, but is not limited to, a computer 805, a network 810, a remote computer 815, a web server 820, a cloud storage server 825, and a computer server 830. In some embodiments, one or more examples of the functional blocks illustrated in Figure 26 may be used.

[0161] Further details of computer 805 are shown in Figure 26. The functional blocks illustrated within computer 805 are merely illustrative examples for constructing exemplary functions and do not encompass all of its functions. Details of the remote computer 815, web server 820, cloud storage server 825, and computer server 830 are not shown, but these computers and devices may also include functions similar to those shown for computer 805.

[0162] Computer 805 may be a personal computer (PC), desktop computer, laptop computer, tablet computer, netbook computer, personal data device (PDA), smartphone, or other programmable electronic device capable of communicating with other devices on the network 810.

[0163] The computer 805 may include a processing unit 835, a bus 837, a memory 840, a non-volatile storage device 845, a network interface 850, a peripheral device interface 855, and a display device interface 865. In some embodiments, these functions may be implemented as individual electronic subsystems (integrated circuit chips or combinations of chips and associated devices), while in other embodiments, some of the combinations of functions may be implemented on a single chip (also known as a system-on-a-chip or SoC).

[0164] The processing unit 835 may be one or more single-chip or multi-chip microprocessors designed and / or manufactured by Intel Corporation, Advanced Micro Devices, Inc. (AMD), Arm Holdings, Apple Computer, etc. Examples of microprocessors include Intel Corporation's Celeron, Pentium®, Core i3, Core i5, Core i7; AMD's Opteron, Phenom, Athlon, Turion, Ryzen; and Arm's Cortex-A, Cortex-R, Cortex-M, etc.

[0165] Bus 837 may be a proprietary or industry-standard high-speed parallel or serial peripheral interconnect bus such as ISA, PCI, PCI Express (PCI-e), or AGP.

[0166] The memory 840 and the non-volatile storage device 845 may be computer-readable storage media. The memory 840 may include any suitable volatile storage device such as dynamic random access memory (DRAM) and static random access memory (SRAM). The non-volatile storage device 845 may include one or more of the following: flexible disk, hard disk, solid-state drive (SSD), read-only memory (ROM), erasable programmable read-only memory (EPROM or Flash), compact disc (CD or CD-ROM), digital multipurpose disc (DVD), memory card, or memory stick.

[0167] The program 848 may be a collection of machine-readable instructions and / or machine-readable data stored in at least one memory, such as a non-volatile storage device 845, and used to create, manage, and control specific software functions as described in detail and illustrated in the drawings of this disclosure. In some embodiments, memory 840 may be much faster than the non-volatile storage device 845. In that case, the program 848 may be transferred from the non-volatile storage device 845 to memory 840 and then executed by the processing unit 835. The program 848 includes computer program code. In one implementation, at least one memory storing the computer program code comprises at least one processing unit (such as a processing circuit described later) for carrying out the control process and claimed advanced embodiments of this disclosure.

[0168] Computer 805 may communicate and interact with other computers via network 810 using network interface 850. Network 810 may be, for example, a local area network (LAN), a wide area network (WAN) such as the Internet, or a combination thereof, and may include wired, wireless, or fiber optic connections. In general, network 810 can be any combination of connections and protocols that support communication between two or more computers and associated devices.

[0169] The peripheral interface 855 may enable data input and output via other devices that can be locally connected to the computer 805. For example, the peripheral interface 855 may enable connection to an external device 860. The external device 860 may include devices such as a keyboard, mouse, keypad, touchscreen, and / or other suitable input devices. The external device 860 may also include portable computer-readable storage media such as a thumb drive, portable optical or magnetic disk, and memory card. Software and data used to implement embodiments of the present disclosure (e.g., program 848) may be stored on such portable computer-readable storage media. In this case, the software may be loaded into the non-volatile storage device 845, or directly into memory 840 via the peripheral interface 855. The peripheral interface 855 may use industry-standard connections such as RS-232 or Universal Serial Bus (USB) to connect to the external device 860.

[0170] The computer 805 may be connected to the display device 870 via the display device interface 865. In one embodiment, the display device 870 may be used to present a command line or a graphical user interface to the user of the computer 805. The display device interface 865 may be connected to the display device 870 using one or more proprietary or industry standard connections such as VGA, DVI, DisplayPort, HDMI®, etc.

[0171] As described above, the network interface 850 enables communication with other computing systems or storage systems or computing devices or storage devices outside of the computer 805. The software programs and data described herein may be downloaded to the non-volatile storage device 845 via the network interface 850 and network 810 from, for example, a remote computer 815, a web server 820, a cloud storage server 825, or a computer server 830. Furthermore, the systems and methods described herein may be implemented by one or more computers connected to the computer 805 via the network interface 850 and network 810. For example, in one embodiment, the systems and methods described herein may be implemented by a combination of a remote computer 815, a computer server 830, or computers interconnected on network 810.

[0172] The data, datasets, and / or databases used in the embodiments of the systems and methods described herein may be stored in or downloaded from a remote computer 815, a web server 820, a cloud storage server 825, or a computer server 830.

[0173] The circuits used in this application can be defined as one or more of the following: electronic components (such as semiconductor devices), a plurality of electronic components directly connected to each other or interconnected via electronic communication, a computer, a network of computer devices, a remote computer, a web server, a cloud storage server, or a computer server. For example, each of the one or more of the computer, remote computer, web server, cloud storage server, and computer server may be included as a component of the circuit, or may include the circuit. In some embodiments, one or more examples of these components may be used, and each of the one or more examples of these components may also be included in the circuit, or may include the circuit. In some embodiments, a circuit represented by a network system may include a serverless computing system that corresponds to virtualized hardware resources. A circuit represented by a computer may be a personal computer (PC), a desktop computer, a laptop computer, a tablet computer, a netbook computer, a personal data device (PDA), a smartphone, or other programmable electronic device that can communicate with other devices on a network. The circuit may be a general-purpose computer, a dedicated computer, or other programmable device described herein that includes one or more processing units. Each processing unit may be one or more single-chip microprocessors or multi-chip microprocessors. One or more processing units are considered processing circuits or circuits because they incorporate transistors and other circuits. The circuits can implement the systems and methods described in this disclosure based on computer-readable program instructions. These program instructions are supplied to one or more processing units (and / or one or more cores within processing units) of one or more general-purpose computers, dedicated computers, or other programmable devices described herein. This makes it possible to generate a machine that constructs a system for implementing the functions specifically shown in the flowcharts and block diagrams of this disclosure, through instructions contained within the circuits or executed via one or more processing units of a programmable device containing the circuits.Alternatively, a circuit may be a pre-programmed structure, such as a programmable logic device or an application-specific integrated circuit. A circuit is considered a circuit whether it is used alone or in combination with other programmable circuits or other pre-programmed circuits.

[0174] Although various exemplary embodiments have been described above, the invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and modifications may be made. Furthermore, it is possible to combine elements from different embodiments to form other embodiments.

[0175] In the exemplary embodiments described above, the substrate processing apparatus to which the cleaning apparatus CD and CDA are applied was a capacitively coupled plasma processing apparatus. However, the substrate processing apparatus to which the cleaning apparatus CD and CDA are applied only needs to have a substrate support portion 16. The substrate processing apparatus to which the cleaning apparatus CD and CDA are applied may also be other types of plasma processing apparatus, such as an inductively coupled plasma processing apparatus, an electron cyclotron resonance (ECR) plasma processing apparatus, or a plasma processing apparatus that generates plasma using microwaves.

[0176] In the embodiments described above, the device MCD was equipped with a control circuit MC, but the device MCD does not necessarily have to be equipped with a control circuit MC. For example, the cleaning device CD may be equipped with a control circuit MC.

[0177] Herein, various exemplary embodiments included in this disclosure are described in [E1] to [E19] below.

[0178] [E1] A cover that defines a cleaning space, configured to separate the processing space within the processing chamber of a substrate processing apparatus into a cleaning space surrounding the substrate support surface of a substrate support portion within the processing chamber and a space outside the cover, wherein the cleaning space is defined by the cover and the substrate support surface when the cover is placed on the substrate support portion, and comprising: a cover; a cleaning mechanism; the cleaning mechanism comprising: a rotating shaft; a drive unit configured to rotate the rotating shaft; and a cleaning member attached to the rotating shaft and configured to clean the substrate support portion within the cleaning space, the cleaning apparatus.

[0179] [E2] The cleaning apparatus according to [E1], wherein the cover includes a top portion and a side portion extending downward from the top portion, and the top portion and the side portion define the cleaning space.

[0180] [E3] The cleaning apparatus according to [E1] or [E2], further comprising: a storage chamber having a storage space and connectable to the processing chamber to airtightly communicate the processing space and the storage space; and a transport device configured to move the cleaning assembly, including the cover and the cleaning mechanism, between the storage space and the processing space.

[0181] [E4] The cleaning apparatus according to any one of [E1] to [E3], wherein the cover includes an exhaust port for discharging gas from the cleaning space.

[0182] [E5] The cleaning apparatus according to any one of [E1] to [E3], wherein the cover includes a gas supply port for supplying gas into the cleaning space and a gas outlet for discharging the gas supplied into the cleaning space, and the gas supply port and the gas outlet are arranged to provide a gas flow path that forms the flow of gas along the surface of the substrate support within the cleaning space and between the gas supply port and the gas outlet.

[0183] [E6] The cleaning apparatus according to any one of [E1] to [E5], further comprising a sealing member configured to be positioned between the substrate support portion and the cover.

[0184] [E7] The cleaning device according to any one of [E1] to [E6], further comprising a communication unit for wired communication with a control circuit configured to control the cleaning device.

[0185] [E8] The cleaning device according to any one of [E1] to [E6], further comprising a communication unit for wireless communication with a control circuit configured to control the cleaning device.

[0186] [E9] The cleaning device according to [E3], further comprising a control circuit configured to control the cleaning device, wherein the control circuit is configured to perform: (a) a step of placing the cleaning assembly on the substrate support portion, and separating the processing space into the cleaning space and the space outside the cover by the cover; (b) a step of cleaning the substrate support portion in the cleaning space by rotating the cleaning member; and (c) a step of exhausting the gas in the cleaning space.

[0187] [E10] The cleaning apparatus according to any one of [E1] to [E9], further comprising a particle measuring device configured to measure particles discharged from the cleaning space via an exhaust passage connected to the cleaning space.

[0188] [E11] A device comprising a control circuit configured to control a cleaning device, wherein the control circuit is configured to perform: (a) a step of placing a cleaning assembly on a substrate support portion in the processing chamber of the substrate processing device, and separating the processing space in the processing chamber into a cleaning space surrounding the substrate support surface of the substrate support portion and the space outside the cover by the cover of the cleaning assembly; (b) a step of cleaning the substrate support portion in the cleaning space by rotating the cleaning member of the cleaning mechanism of the cleaning assembly; and (c) a step of exhausting the gas in the cleaning space.

[0189] [E12] The apparatus according to [E11], wherein the control circuit is configured to perform (b) and (c) simultaneously.

[0190] [E13] The apparatus according to [E11] or [E12], wherein the control circuit is configured to further perform the step of (d) controlling a particle measuring device to measure particles in the gas exhausted in (c).

[0191] [E14] The apparatus according to [E13], wherein the control circuit is configured to further perform: (e) supply a cleaning gas to the cleaning space when the number of particles measured in (d) falls below a threshold; (f) generate a liquid on the surface of the substrate support by condensing the cleaning gas in the cleaning space; and (g) wet clean the substrate support in the cleaning space by rotating the cleaning member against the substrate support to which the liquid has adhered.

[0192] [E15] The apparatus according to [E14], wherein (f) further comprises the step of setting the temperature of the substrate support portion to a temperature below the liquefaction temperature of the cleaning gas.

[0193] [E16] The apparatus according to [E14] or [E15], wherein the control circuit is configured to further perform the step of (h) discharging the liquid in the cleaning space from the cleaning space.

[0194] [E17] The apparatus according to any one of [E14] to [E16], wherein the control circuit is configured to (i) after (g) to further perform the step of raising the temperature of the substrate support so as to vaporize the liquid.

[0195] [E18] The apparatus according to any one of [E11] to [E17], wherein the control circuit is configured to further perform the steps of (j) supplying gas into the cleaning space and (k) discharging the gas from the cleaning space to remove deposits adhering to the substrate support.

[0196] [E19] A substrate processing apparatus comprising a processing chamber that provides a processing space and a substrate support portion having a substrate support surface and disposed within the chamber, and a cleaning apparatus as described in [E3].

[0197] In light of the above teachings, it is clear that numerous improvements and modifications of the present invention are possible. Therefore, it should be understood that the present invention may be implemented within the scope of the appended claims in a manner different from that specifically described herein.

[0198] 10...Substrate processing apparatus, 12...Processing chamber, 16...Substrate support part, 16a...Substrate support surface, 110...Housing chamber, 112...Housing space, 122...Cover, 124...Cleaning mechanism, 124a...Rotating shaft, 124b...Drive unit, 124c...Cleaning member, CD...Cleaning device, S1...Processing space, S2...Cleaning space, S3...Space outside the cover.

Claims

1. A cover that defines a cleaning space, configured to separate the processing space within the processing chamber of a substrate processing apparatus into a cleaning space surrounding the substrate support surface of the substrate support portion within the processing chamber and a space outside the cover, wherein the cleaning space is defined by the cover and the substrate support surface when the cover is placed on the substrate support portion, and comprising: a cover; a cleaning mechanism; the cleaning mechanism comprising: a rotating shaft; a drive unit configured to rotate the rotating shaft; and a cleaning member attached to the rotating shaft and configured to clean the substrate support portion within the cleaning space; 2. The cleaning apparatus according to claim 1, wherein the cover includes a top portion and a side portion extending downward from the top portion, and the top portion and the side portion define the cleaning space.

3. The cleaning apparatus according to claim 1 or 2, further comprising: a housing chamber having a housing space and connectable to the processing chamber to airtightly communicate the processing space and the housing space; and a transport device configured to move the cleaning assembly, including the cover and the cleaning mechanism, between the housing space and the processing space.

4. The cleaning apparatus according to claim 1 or 2, wherein the cover includes an exhaust port for discharging gas from the cleaning space.

5. The cleaning apparatus according to claim 1 or 2, wherein the cover includes a gas supply port for supplying gas into the cleaning space and a gas outlet for discharging the gas supplied into the cleaning space, and the gas supply port and the gas outlet are arranged to provide a gas flow path that forms the flow of gas along the surface of the substrate support within the cleaning space and between the gas supply port and the gas outlet.

6. The cleaning apparatus according to claim 1 or 2, further comprising a sealing member configured to be positioned between the substrate support portion and the cover.

7. The cleaning device according to claim 1 or 2, further comprising a communication unit for wired communication with a control circuit configured to control the cleaning device.

8. The cleaning device according to claim 1 or 2, further comprising a communication unit for wireless communication with a control circuit configured to control the cleaning device.

9. The cleaning device according to claim 3, further comprising a control circuit configured to control the cleaning device, wherein the control circuit is configured to perform: (a) a step of placing the cleaning assembly on the substrate support portion, and separating the processing space into the cleaning space and the space outside the cover by the cover; (b) a step of cleaning the substrate support portion in the cleaning space by rotating the cleaning member; and (c) a step of exhausting the gas in the cleaning space.

10. The cleaning apparatus according to claim 1 or 2, further comprising a particle measuring device configured to measure particles discharged from the cleaning space via an exhaust passage connected to the cleaning space.

11. A device comprising a control circuit configured to control a cleaning device, wherein the control circuit is configured to perform: (a) a step of placing a cleaning assembly on a substrate support portion in the processing chamber of a substrate processing device, and separating the processing space in the processing chamber into a cleaning space surrounding the substrate support surface of the substrate support portion and the space outside the cover by the cover of the cleaning assembly; (b) a step of cleaning the substrate support portion in the cleaning space by rotating the cleaning member of the cleaning mechanism of the cleaning assembly; and (c) a step of exhausting the gas in the cleaning space.

12. The apparatus according to claim 11, wherein the control circuit is configured to perform (b) and (c) simultaneously.

13. The apparatus according to claim 11 or 12, wherein the control circuit is configured to further perform the step of (d) controlling a particle measuring device to measure particles in the gas exhausted in (c).

14. The apparatus according to claim 13, wherein the control circuit is configured to further perform: (e) supply a cleaning gas to the cleaning space when the number of particles measured in (d) falls below a threshold; (f) generate a liquid on the surface of the substrate support by condensing the cleaning gas in the cleaning space; and (g) wet clean the substrate support in the cleaning space by rotating the cleaning member against the substrate support to which the liquid has adhered.

15. The apparatus according to claim 14, wherein (f) further comprises the step of setting the temperature of the substrate support portion to a temperature below the liquefaction temperature of the cleaning gas.

16. The apparatus according to claim 14, wherein the control circuit is configured to further perform the step of (h) discharging the liquid in the cleaning space from the cleaning space.

17. The apparatus according to claim 14, wherein the control circuit is configured to (i) after (g) to further perform the step of raising the temperature of the substrate support to vaporize the liquid.

18. The apparatus according to claim 11, wherein the control circuit is configured to further perform the steps of: (j) supplying gas into the cleaning space; and (k) discharging the gas from the cleaning space to remove deposits adhering to the substrate support.

19. A substrate processing apparatus comprising: a processing chamber that provides a processing space; a substrate support portion having a substrate support surface and disposed within the chamber; and a cleaning apparatus according to claim 3.

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