The invention discloses a preparation method for a silicon nitride film, a solar cell with the silicon nitride film and a preparation method for the solar cell. The preparation method for the silicon nitride film includes following steps: S1, placing a silicon wafer into a tubular furnace; S2, feeding nitrogen into the tubular furnace, heating the tubular furnace under the atmosphere of nitrogen to 340 DEG C to 360 DEG C, and maintaining the temperature for 500 seconds to 2000 seconds; and S3, utilizing the PECVD (plasma enhanced chemical vapor deposition) method to sequentially form a first silicon nitride film layer and a second silicon nitride film layer on the silicon wafer. The first silicon nitride film layer is arranged on the silicon wafer before the temperature of the tubular furnace is maintained, so that temperatures around and in the middle of the silicon wafer are uniform after the step of temperature maintaining of the silicon wafer, growth rate of the silicon nitride film around and in the middle of the silicon wafer is guaranteed, overhigh growth rate caused by higher temperature at the edge of the silicon wafer is improved, the problem of color deviation caused by different thicknesses and refractive indexes of the silicon nitride film at various positions on the surface of the silicon wafer is solved, grade of the silicon wafer is lowered, and acceptance rate of the silicon wafer is improved.