The invention relates to a preparation method of high-purity indium. The preparation method comprises the following steps: an acid leaching step of leaching the material indium to dilute sulphuric acid, so as to remove oxide on the surface of the material indium; a measuring step of getting the material indium out of the dilute sulphuric acid, cleaning and drying the material indium, and measuring the impurities and content in the material indium by a photometer, wherein the impurities include copper, tin, arsenic, zinc, thallium, lead, iron, cadmium and aluminium; a smelting and impurity-removing step of smelting the impurity-removed material indium and removing the impurity of tin, thallium and cadmium. According to the preparation method of the high-purity indium, firstly, the impurities of tin, thallium and cadmium, which are difficult to electrolyze and of which chemical potentials close to that of indium, are smelted to reduce the content of the tin, the thallium and the cadmium; and then the content of copper, tin, arsenic, zinc, thallium, lead, iron, cadmium, aluminium and the like are further reduced by secondary electrolysation, so that the high-purity indium achieves the purity of more than 5N, thereby satisfying the usage requirements; and moreover, the preparation method is simple to operate, and is capable of preventing the poisonous gas from polluting the environment.