The invention relates to the technical field of thin film transistor copper-molybdenum lamination etching, in particular to a TFT copper-molybdenum lamination film etching liquid composition. For the total weight of the composition, the composition comprises the following components: 1-30% of hydrogen peroxide by weight, 0.01-8% of hydrogen peroxide stabilizing agent by weight, 0.5-8% of phosphates by weight, 0.1-8% of inorganic acid by weight, 1-10% of metal chelating agent by weight, 0.01-5% of metal corrosion inhibitor by weight, and the balance of water. The etching liquid composition contains no fluorochemicals, so that the corrosion of a glass substrate or a silicon plate cannot be generated, no environmental pollution is generated, and the reaction is mild and easy to control; the metal chelating agent can generate copper-molybdenum ions through chelating to prevent decomposition of hydrogen peroxide from causing the life shortening and the production line danger; the copper-molybdenum etching speed is autonomously adjusted through primary cell reaction by phosphates; and the metal corrosion inhibitor is matched to prevent the copper shrinkage or the molybdenum shrinkage, so that the etching process is stable, the etching speed is proper, the etching angle is stabilized at 30-60 degrees, the critical size loss is low, and the later copper production performance is improved.