Array substrate and preparation method thereof, and display device

Abstract

The present invention provides an array substrate and a preparation method thereof, and a display device, which belong to the field of display technology and can solve the problem that the threshold voltage of a thin film transistor is greatly drifted due to the illumination of a thin film transistor by an existing organic electroluminescent device. The array substrate of the present invention comprises: a substrate, and a plurality of pixel units located on the substrate; each of the pixel units comprises an organic electroluminescent device; wherein the organic electroluminescent device comprises a first pole, a light-emitting layer, and a second pole arranged in sequence in a direction away from the substrate; and the material of the first pole comprises a reflective material; a protruding structure is arranged between any two adjacent first poles of the organic electroluminescent device, and the first pole of the organic electroluminescent device extends to the side wall of the protruding structure.

Description

Technical Field

[0001] The present invention belongs to the field of display technology, and in particular relates to an array substrate and a preparation method thereof, and a display device. Background Art

[0002] Since there is no overlapping area between the gate and source and drain electrodes of the top-gate self-aligned oxide thin-film transistor (Oxide TFT), this type of thin-film transistor has a smaller parasitic capacitance and a smaller RC delay. When applied to pixel circuits, it has a higher switching speed, making it easier to achieve a higher-resolution organic electroluminescent device (OLED) display.

[0003] Currently, many research groups have conducted relevant research on top-gate self-aligned thin-film transistor devices. However, oxide thin-film transistors are sensitive to light, and their electrical properties will change under light. When top-gate oxide thin-film transistors are applied to top-emission display panels, most of the light emitted by the upper light-emitting layer is blocked by the highly reflective anode, but the light leaking from the side will affect the characteristics of the oxide thin-film transistor, causing the threshold voltage of the thin-film transistor to drift significantly. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art and to provide an array substrate and a preparation method thereof, and a display device that prevent an organic electroluminescent device from irradiating a thin film transistor, resulting in a large drift in the threshold voltage of the thin film transistor.

[0005] The technical solution adopted to solve the technical problem of the present invention is an array substrate, comprising: a substrate, and a plurality of pixel units located on the substrate; each of the pixel units comprises an organic electroluminescent device; wherein the organic electroluminescent device comprises a first pole, a light-emitting layer, and a second pole arranged in sequence along a direction away from the substrate; and the material of the first pole comprises a reflective material; a protruding structure is arranged between any two adjacent first poles of the organic electroluminescent devices, and the first pole of the organic electroluminescent device extends to the side wall of the protruding structure.

[0006] Preferably, each of the pixel units further comprises a thin film transistor; wherein,

[0007] The layer where the first electrode of the organic electroluminescent device is located is located above the layer where the thin film transistor is located, and an interlayer insulating layer is arranged between the two; the protruding structure is located above the interlayer insulating layer;

[0008] The orthographic projection of the first electrode of the organic electroluminescent device on the substrate covers the orthographic projection of the thin film transistor on the substrate.

[0009] Further preferably, the interlayer insulating layer includes a planarization layer; and the protruding structure and the planarization layer are an integrally formed structure.

[0010] Further preferably, the interlayer insulating layer further includes a passivation layer located between the layer where the source and drain of the thin film transistor are located and the planarization layer.

[0011] Further preferably, in each of the pixel units, the first electrode of the organic electroluminescent device is connected to the drain electrode of the thin film transistor through a via hole penetrating the interlayer insulating layer.

[0012] The technical solution adopted to solve the technical problem of the present invention is a method for preparing an array substrate, comprising: a step of forming a plurality of pixel units on a substrate; the step of forming each of the pixel units comprises sequentially forming a first pole, a light-emitting layer, and a second pole of an organic electroluminescent device on the substrate; and the material of the first pole comprises a reflective material; the method for preparing the array substrate further comprises: a step of forming a protruding structure between any two adjacent first poles of the organic electroluminescent devices; wherein the formed first pole of the organic electroluminescent device extends to the side wall of the protruding structure.

[0013] Preferably, before forming the first electrode of the organic electroluminescent device, the method further comprises:

[0014] On the substrate, a pattern including an active layer of a thin film transistor is formed by a patterning process;

[0015] Depositing a gate insulating layer and a gate metal layer in sequence, and forming a pattern of a gate of a thin film transistor through a patterning process, and etching the gate insulating layer with the formed gate mask so that the gate insulating layer is identical to the gate pattern;

[0016] forming an interlayer dielectric layer, and etching the interlayer dielectric layer to form a source contact via hole and a drain contact via hole;

[0017] A pattern including a source electrode and a drain electrode of a thin film transistor is formed by a patterning process; wherein the source electrode is connected to the active layer through the source contact via hole; and the drain electrode is connected to the active layer through the drain contact via hole;

[0018] An interlayer insulating layer is formed; the protruding structure is located on the interlayer insulating layer.

[0019] Further preferably, the step of forming an interlayer insulating layer includes:

[0020] The step of forming a planarization layer, wherein the protruding structure and the planarization layer are formed by a single patterning process and the two are made of the same material.

[0021] Further preferably, the step of forming the interlayer insulating layer further comprises:

[0022] Before forming the planarization layer, a passivation layer is formed.

[0023] The technical solution adopted to solve the technical problem of the present invention is a display device, including the above-mentioned array substrate.

[0024] The present invention has the following beneficial effects:

[0025] In the array substrate of the invention, since the material of the first pole of the organic electroluminescent device is a reflective material, the organic electroluminescent device in the present invention is a top-emitting organic electroluminescent device, and most of the light emitted by the light-emitting layer will be reflected by the first pole to the second pole and then emitted. At the same time, part of the light is emitted from the surroundings of the organic electroluminescent device. In the present invention, a protruding structure is arranged between the first poles of two adjacent organic electroluminescent devices, and the first pole of the organic electroluminescent device extends to the side wall of the protruding structure, so that the light emitted from the surroundings of the organic electroluminescent device can be reflected by the first pole extending to the side wall of the protruding structure to the second pole and then emitted, thereby increasing the light-emitting area of ​​the light-emitting layer. It is known to those skilled in the art that thin-film transistors and other devices are usually arranged in each pixel unit, and at this time, it is also possible to avoid the light emitted from the surroundings of the organic electroluminescent device from irradiating the thin-film transistors in the adjacent pixel units, causing the problem of large drift of the threshold voltage of the thin-film transistor, thereby greatly improving the light stability of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a schematic structural diagram of an array substrate according to Embodiment 1 of the present invention;

[0027] Figure 2 Flow chart of a method for preparing an array substrate according to Embodiment 2 of the present invention.

[0028] The figures are marked as follows: 10, substrate; 1, active layer; 2, gate insulating layer; 3, gate; 4, interlayer dielectric layer; 51, source; 52, drain; 6, interlayer insulating layer; 61, planarization layer; 62, passivation layer; 7, anode; 8, pixel defining layer; 9, light-emitting layer; 11, cathode; 12, protruding structure. DETAILED DESCRIPTION

[0029] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0030] Embodiment 1:

[0031] like Figure 1As shown, this embodiment provides an array substrate, comprising: a substrate 10, a plurality of pixel units located on the substrate 10; each of the pixel units comprises an organic electroluminescent device; wherein the organic electroluminescent device comprises a first electrode, a light-emitting layer 9, and a second electrode arranged in sequence in a direction away from the substrate 10; and the material of the first electrode comprises a reflective material; a protruding structure 12 is arranged between any two adjacent first electrodes of the organic electroluminescent devices, and the first electrode of the organic electroluminescent device extends to the side wall of the protruding structure 12, as shown in FIG. Figure 1 Shown in the dotted circle.

[0032] In the array substrate of the embodiment, since the material of the first pole of the organic electroluminescent device is a reflective material, the organic electroluminescent device in this embodiment is a top-emitting organic electroluminescent device, and most of the light emitted by the light-emitting layer 9 will be reflected by the first pole to the second pole and then emitted. At the same time, part of the light is emitted from the surroundings of the organic electroluminescent device. In this embodiment, a protruding structure 12 is arranged between the first poles of two adjacent organic electroluminescent devices, and the first pole of the organic electroluminescent device extends to the side wall of the protruding structure 12, so that the light emitted from the surroundings of the organic electroluminescent device can be reflected to the second pole through the first pole extending to the side wall of the protruding structure 12, thereby increasing the light-emitting area of ​​the light-emitting layer 9. It can be known to those skilled in the art that thin film transistors and other devices are usually arranged in each pixel unit, and at this time, it can also be avoided that the light emitted from the surroundings of the organic electroluminescent device is irradiated to the thin film transistors in the adjacent pixel units, causing the problem of large drift of the threshold voltage of the thin film transistor, and greatly improving the light stability of the device.

[0033] It should be noted here that one of the first pole and the second pole of the organic electroluminescent device is the anode 7, and the other is the cathode 11; in the following specific implementation method, the array substrate in this embodiment is specifically described by taking the first pole of the organic electroluminescent device as the anode 7 and the second pole as the cathode 11 as an example.

[0034] Combination Figure 1 As shown, as a preferred implementation method in this embodiment, each pixel unit in the array substrate includes a thin film transistor and an organic electroluminescent device; in order to prevent the light emitted by the organic electroluminescent device from irradiating the thin film transistor and affecting the performance of the thin film transistor, the thin film transistor and the organic electroluminescent device are arranged in sequence along the direction away from the substrate 10, and because the material of the anode 7 of the organic electroluminescent device is a reflective material, that is, the anode 7 is a reflective electrode, the anode 7 of the organic electroluminescent device is designed so that its positive projection can completely cover the positive projection of the thin film transistor on the substrate 10, so as to avoid the organic electroluminescent device irradiating the thin film transistor and causing the problem of threshold drift of the thin film transistor.

[0035] In which, an interlayer insulating layer 6 is arranged between the thin film transistor and the anode 7 of the organic electroluminescent device, the protruding structure 12 is arranged on the interlayer insulating layer 6, and the anode 7 of the organic electroluminescent device extends to the protruding structure 12. It should be noted here that the two side edges of the anode 7 respectively extend to the side edges of the protruding structure 12 closest thereto.

[0036] Preferably, the interlayer insulating layer 6 may include a planarization layer 61, and the protruding structure 12 and the planarization layer 61 are an integrally formed structure, that is, the protruding structure 12 is formed while the planarization layer 61 is formed, so that the process steps are not increased and the production cost is not increased.

[0037] Of course, the interlayer insulating layer may also include a passivation layer 62 between the thin film transistor and the planarization layer 61, and the passivation layer 62 may prevent water vapor, oxygen, etc. generated during film formation from contaminating the organic electroluminescent device. At this time, the anode 7 of the organic electroluminescent device is connected to the drain 52 of the thin film transistor through a via hole penetrating the passivation layer 62 and the planarization layer 61.

[0038] The thin film transistors used in this embodiment include any one of polysilicon thin film transistors, amorphous silicon thin film transistors, and oxide thin film transistors. Of course, the thin film transistors are not limited to the above types, and other types of thin film transistors may also be used.

[0039] The thin film transistor in this embodiment preferably adopts a top-gate thin film transistor, that is, the gate 3 is located above the active layer 1. Therefore, after the gate 3 is formed, the source 51 contact area and the drain 52 contact area of ​​the active layer 1 can be conductorized using the gate 3 as a mask template to ensure good conductivity between the active layer 1 and the source 51 and the drain 52, while reducing one mask process. Of course, the thin film transistor can also adopt a bottom-gate thin film transistor, that is, the gate 3 is formed after the active layer 1.

[0040] Embodiment 2:

[0041] This embodiment provides a method for preparing an array substrate, which can be used to prepare the array substrate in Embodiment 1. The preparation method comprises: a step of forming a plurality of pixel units on a substrate 10; the step of forming each pixel unit comprises sequentially forming a first electrode, a light-emitting layer 9, and a second electrode of an organic electroluminescent device on the substrate 10; and the material of the first electrode comprises a reflective material; and a step of forming a protruding structure 12 between any two adjacent first electrodes of the organic electroluminescent devices; wherein the formed first electrode of the organic electroluminescent device extends to the side wall of the protruding structure 12.

[0042] In the method for preparing the array substrate of the embodiment, the material of the first pole of the formed organic electroluminescent device is a reflective material. Therefore, the organic electroluminescent device in this embodiment is a top-emitting organic electroluminescent device. Most of the light emitted by the light-emitting layer 9 will be reflected by the first pole to the second pole and then emitted. At the same time, part of the light will be emitted from the surroundings of the organic electroluminescent device. In this embodiment, a protruding structure 12 is arranged between the first poles of two adjacent organic electroluminescent devices, and the first pole of the organic electroluminescent device extends to the side wall of the protruding structure 12, so that the light emitted from the surroundings of the organic electroluminescent device can be reflected to the second pole through the first pole extending to the side wall of the protruding structure 12, thereby increasing the light-emitting area of ​​the light-emitting layer 9. It can be known to those skilled in the art that thin film transistors and other devices are usually arranged in each pixel unit. At this time, it can also be avoided that the light emitted from the surroundings of the organic electroluminescent device is irradiated to the thin film transistors in the adjacent pixel units, causing the problem of large drift of the threshold voltage of the thin film transistor, and greatly improving the light stability of the device.

[0043] It should be noted that one of the first and second electrodes of the organic electroluminescent device is an anode 7, and the other is a cathode 11; the structure of the thin film transistor can be a top-gate thin film transistor or a bottom-gate thin film transistor; the material of the active layer 1 of the thin film transistor can be a material based on zinc oxide, or can be polycrystalline silicon, amorphous silicon and the like. In the following specific implementations, the preparation method of the array substrate in this embodiment is specifically described by taking the first electrode of the organic electroluminescent device as the anode 7, the second electrode as the cathode 11, and the thin film transistor as a top-gate oxide thin film transistor as an example.

[0044] In the present invention, the patterning process may include only the photolithography process, or may include the photolithography process and the etching step, and may also include other processes such as printing and inkjetting for forming a predetermined pattern; the photolithography process refers to a process for forming a pattern using a photoresist, a mask, an exposure machine, etc., including the process of film formation, exposure, and development. The corresponding patterning process may be selected according to the structure formed in the present invention.

[0045] Combination Figure 2 As shown, as a preferred implementation of this embodiment, the preparation method specifically includes the following steps:

[0046] Step 1: On the substrate 10, a pattern including the thin film transistor active layer 1 is formed by a patterning process.

[0047] In this step, the substrate 10 is made of transparent materials such as glass and is pre-cleaned. A semiconductor material layer is formed by sputtering, thermal evaporation, plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), atmospheric pressure chemical vapor deposition (APCVD) or electron cyclotron resonance chemical vapor deposition (ECR-CVD), and then a pattern including the thin film transistor active layer 1 is formed by a patterning process.

[0048] The material of the active layer 1 is a material based on zinc oxide, such as indium gallium zinc oxide IGZO.

[0049] Step 2: Form a pattern including the gate insulating layer 2 and the gate 3 through a single patterning process.

[0050] In this step, first, a gate insulating layer 2 is formed on the substrate 10 having an active layer 1 by plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition, electron cyclotron resonance chemical vapor deposition or sputtering; then, a gate metal layer is formed by sputtering, thermal evaporation, plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition or electron cyclotron resonance chemical vapor deposition.

[0051] Then, by using a half tone mask (HTM) or a gray tone mask (GTM), a pattern including a gate 3 and a gate insulating layer 2 located above the gate 3 is formed at the same time through a single patterning process (film formation, exposure, development, wet etching or dry etching). The gate 3 is made of metal, metal alloy, such as molybdenum, molybdenum-niobium alloy, aluminum, aluminum-neodymium alloy, titanium or copper and other conductive materials. The gate insulating layer 2 is made of insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, etc.

[0052] In this step, it can further include: using the gate 3 as a mask, using an ion implantation method to dope the regions of the active layer 1 corresponding to the source 51 and the drain 52 (i.e., the source 51 contact region and the drain 52 contact region) to enhance the ohmic contact between the active layer 1 and the source 51 and the drain 52. The ion implantation method includes an ion implantation method with a mass analyzer, an ion cloud implantation method without a mass analyzer, a plasma implantation method, or a solid diffusion implantation method.

[0053] Step 3: forming an interlayer dielectric layer 4 , and etching to form source 51 contact vias and drain 52 contact vias at positions corresponding to the source 51 contact region and the drain 52 contact region of the active layer 1 .

[0054] In this step, an interlayer dielectric layer 4 is formed on the substrate 10 with the gate 3 formed thereon by plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition, electron cyclotron resonance chemical vapor deposition, or sputtering, and then, a source 51 contact via and a drain 52 contact via are formed at positions corresponding to the source 51 contact region and the drain 52 contact region of the active layer 1 by an etching process. The material of the interlayer dielectric layer 4 is an insulating material such as silicon oxide, silicon nitride, or silicon oxynitride.

[0055] Step 4: Forming patterns including the source 51 and the drain 52 of the thin film transistor through a patterning process.

[0056] In this step, a source-drain metal layer is formed on the substrate 10 with the interlayer dielectric layer 4 by sputtering, thermal evaporation, plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition or electron cyclotron resonance chemical vapor deposition, and then a pattern including a source 51 and a drain 52 is formed by a composition process, and the source 51 is connected to the active layer 1 through the source 51 contact via; the drain 52 is connected to the active layer 1 through the drain 52 contact via; the source 51 and the drain 52 are formed of metal, metal alloy, such as molybdenum, molybdenum-niobium alloy, aluminum, aluminum-neodymium alloy, titanium or copper and other conductive materials.

[0057] Step 5: forming an interlayer insulating layer 6 and a protruding structure 12 ; wherein the interlayer insulating layer 6 preferably includes a passivation layer 62 and a planarization layer 61 which are sequentially arranged in a direction away from the substrate 10 .

[0058] In this step, a passivation layer 62 and a planarization layer 61 are sequentially formed on the substrate 10 on which the source electrode 51 and the drain electrode 52 are formed by plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition, electron cyclotron resonance chemical vapor deposition or sputtering. Thereafter, the planarization layer 61 is etched to form a protruding structure 12 at a position between the two pixel units, that is, the planarization layer 61 and the protruding structure 12 are an integral structure and are formed by a single patterning process.

[0059] Then, a via hole is formed penetrating the passivation layer 62 and the planarization layer 61 to connect the anode 7 of the organic electroluminescent device with the drain 52 of the thin film transistor.

[0060] Step six: forming the anode 7 of the organic electroluminescent device.

[0061] In this step, a conductive metal film is deposited by sputtering, thermal evaporation, plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition or electron cyclotron resonance chemical vapor deposition. The conductive metal film has a high reflectivity and meets certain metal work function requirements, and a double-layer or triple-layer film structure is often used: for example, ITO (indium tin oxide) / Ag (silver) / ITO (indium tin oxide) or Ag (silver) / ITO (indium tin oxide) structure; or, the ITO in the above structure is replaced with IZO (indium zinc oxide), IGZO (indium gallium zinc oxide) or InGaSnO (indium gallium tin oxide). Of course, it can also be formed by inorganic metal oxides, organic conductive polymers or metal materials with conductive properties and high work function values. The inorganic metal oxides include indium tin oxide or zinc oxide, the organic conductive polymers include PEDOT:SS, PANI, and the metal materials include gold, copper, silver or platinum. Afterwards, the pattern of the anode 7 of the organic electroluminescent device is formed by a patterning process.

[0062] The anode 7 of the organic electroluminescent device is designed so that its orthographic projection can completely cover the orthographic projection of the thin film transistor on the substrate 10, so as to avoid the organic electroluminescent device irradiating the thin film transistor and causing the problem of threshold drift of the thin film transistor. It should be noted that the two sides of the anode 7 extend to the sides of the protruding structure 12 closest to it. The anode 7 of the organic electroluminescent device is connected to the drain 52 of the thin film transistor through a via hole penetrating the passivation layer 62 and the planarization layer 61.

[0063] Based on the structure of the above array substrate, a pixel defining layer 8 (Pixel Define Layer, PDL for short) is further prepared, followed by vapor deposition or coating of an emitting layer 9 (Emitting Layer: EL for short), and finally a metal cathode 11 is formed by sputtering or vapor deposition, and then an array substrate with OLED devices can be formed after packaging.

[0064] Embodiment 3:

[0065] This embodiment provides a display device, including the array substrate in Embodiment 1.

[0066] The display device may be a liquid crystal display device or an electroluminescent display device, such as a liquid crystal panel, electronic paper, OLED panel, mobile phone, tablet computer, television, monitor, notebook computer, digital photo frame, navigator, or any other product or component with a display function.

[0067] The display device in this embodiment has good display quality.

[0068] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. An array substrate, comprising: A substrate, and a plurality of pixel units located on the substrate; each of the pixel units comprises an organic electroluminescent device; wherein the organic electroluminescent device comprises a first electrode, a light-emitting layer, and a second electrode arranged in sequence in a direction away from the substrate; and the material of the first electrode comprises a reflective material; characterized in that a protruding structure is arranged between any two adjacent first electrodes of the organic electroluminescent devices, and the first electrode of the organic electroluminescent device extends to the side wall of the protruding structure; Each of the pixel units further includes a thin film transistor; The layer where the first electrode of the organic electroluminescent device is located is located above the layer where the thin film transistor is located, and an interlayer insulating layer is arranged between the two; the protruding structure is located above the interlayer insulating layer; The orthographic projection of the first electrode of the organic electroluminescent device on the substrate covers the orthographic projection of the thin film transistor on the substrate; The interlayer insulating layer includes a planarization layer; the protrusion structure and the planarization layer are an integrally formed structure; In each of the pixel units, the first electrode of the organic electroluminescent device is connected to the drain electrode of the thin film transistor through a via hole penetrating the interlayer insulating layer.

2. The array substrate according to claim 1, characterized in that: The interlayer insulating layer further includes a passivation layer located between the layer where the source and drain electrodes of the thin film transistor are located and the planarization layer.

3. A method for preparing an array substrate, comprising: The step of forming a plurality of pixel units on a substrate; The step of forming each of the pixel units includes sequentially forming a first electrode, a light-emitting layer, and a second electrode of an organic electroluminescent device on the substrate; And the material of the first electrode includes a reflective material; it is characterized in that the preparation method of the array substrate also includes: a step of forming a protruding structure between any two adjacent first electrodes of the organic electroluminescent devices; wherein the formed first electrode of the organic electroluminescent device extends to the side wall of the protruding structure.

4. The method for preparing an array substrate according to claim 3, characterized in that: Before forming the first electrode of the organic electroluminescent device, the method further comprises: On the substrate, a pattern including an active layer of a thin film transistor is formed by a patterning process; Depositing a gate insulating layer and a gate metal layer in sequence, and forming a pattern of a gate of a thin film transistor through a patterning process, and etching the gate insulating layer with the formed gate mask so that the gate insulating layer is identical to the gate pattern; forming an interlayer dielectric layer, and etching the interlayer dielectric layer to form a source contact via hole and a drain contact via hole; A pattern including a source electrode and a drain electrode of a thin film transistor is formed by a patterning process; wherein the source electrode is connected to the active layer through the source contact via hole; and the drain electrode is connected to the active layer through the drain contact via hole; An interlayer insulating layer is formed; the protruding structure is located on the interlayer insulating layer.

5. The method for preparing an array substrate according to claim 4, characterized in that: The step of forming an interlayer insulating layer comprises: The step of forming a planarization layer, wherein the protruding structure and the planarization layer are formed by a single patterning process and the two are made of the same material.

6. The method for preparing an array substrate according to claim 5, characterized in that: The step of forming an interlayer insulating layer further comprises: Before forming the planarization layer, a passivation layer is formed.

7. A display device, characterized in that: The invention comprises the array substrate according to any one of claims 1 to 2.

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