Method for preparing single-layer tungsten diselenide nanoband based on space confinement strategy

By using the atmospheric pressure chemical vapor deposition method of argon and hydrogen in a high-temperature tube furnace, the problems of complex preparation of single-layer tungsten diselenide nanoribbons and the introduction of impurities in the existing technology are solved, and the width is adjustable and high quality is achieved. Nanoribbon preparation and device performance improvement.

CN109809372AActive Publication Date: 2019-05-28XIANGTAN UNIV
7 Cites 19 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
XIANGTAN UNIV
Filing Date
2019-03-26
Publication Date
2019-05-28

AI Technical Summary

Technical Problem

The existing method of preparing single-layer tungsten diselenide nanoribbons is complex, costly and easy to introduce impurities, which limits the industrial application and device performance of the material.

Method used

An atmospheric pressure chemical vapor deposition method based on a spatial confinement strategy is used to grow tungsten diselenide using argon and hydrogen in a high-temperature tube furnace to control the width and thickness of the nanoribbons, avoiding the use of salt and ensuring Product purity.

Benefits of technology

The high-quality preparation of single-layer tungsten diselenide nanoribbons with adjustable width is achieved, which avoids the introduction of impurities, reduces equipment requirements, and improves the reproducibility of batch preparation and device performance.

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Abstract

The invention discloses a method for preparing a single-layer tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the growth time of hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a tungsten diselenide nanoband is carried out by utilizing a constant-pressure chemical vapor deposition method; physicochemical characteristics of a one-dimensional transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to semiconductor properties can be displayed from the edge to the center of a wider band; the tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the special property; industrial production of the tungsten diselenide nanoband can be realized through an experimental method of the invention.
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Citation Information

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