Method for preparing single-layer tungsten diselenide nanoband based on space confinement strategy

A technology of tungsten diselenide and nanobelts, which is applied in the fields of chemical instruments and methods, nanotechnology, selenium/tellurium compounds, etc., can solve the problems of inability to realize industrial application, reduce sample quality, affect performance, etc., and achieve high-quality batch preparation , good reproducibility and low equipment requirements

Active Publication Date: 2019-05-28
XIANGTAN UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

The currently reported methods for preparing nanoribbon materials are mainly template method and solvent method. Although these two methods can obtain narrower nanoribbons, the preparation method is complicated in operation and high in preparation cost, and cannot be applied industrially.
The use of ordinary chemical vapor deposition usually requires the addition of salt to prepare tungsten diselenide nanoribbons, but this method will inevitably introduce impurities into the material due to the use of salt, thereby reducing the quality of the sample, which will eventually affect the subsequent device preparation process and Device performance
[0005] Chinese invention CN201810078755 provides a method for preparing a large-area single-layer tungsten diselenide single crystal, which reports the use of CVD method to WO 3 Preparation of monolayer WSe as precursor 2 The method of nanosheets, which is representative of two-dimensional materials, uses only argon as the carrier gas in the process, and adds NaCl solution to the growth substrate for pretreatment with a pipette gun, but this method can only monolayer WSe 2 Triangular nanosheets cannot obtain one-dimensional nanomaterials, which limits the device application of the material. At the same time, the addition of NaCl salt will inevitably introduce impurity ions and affect the purity of the product, and the salt product that appears on the growth substrate after adding salt Will affect the subsequent device preparation process and device performance

Method used

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  • Method for preparing single-layer tungsten diselenide nanoband based on space confinement strategy
  • Method for preparing single-layer tungsten diselenide nanoband based on space confinement strategy
  • Method for preparing single-layer tungsten diselenide nanoband based on space confinement strategy

Examples

Experimental program
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Effect test

Embodiment 1

[0035] The purchased silicon dioxide wafers were washed in ethanol and deionized water in turn, and then dried with nitrogen gas. Place the cleaned silicon dioxide sheet in the heating center of the high-temperature tube furnace, and put selenium powder (near the upstream of the nozzle), tungsten trioxide and silicon dioxide sheet ( downstream heating center), (tungsten trioxide powder is sprinkled between two silicon wafers). The masses of the selenium powder and the tungsten trioxide are 430-500 mg and 15-30 mg respectively, and the distance between the selenium powder and the tungsten trioxide is 24 cm. Then, argon gas (500 sccm) was introduced into the reaction chamber to clean the reaction chamber, and the residual air in the chamber was discharged, and the cleaning time was 30 minutes. Subsequently, the temperature program is raised to control the temperature of the tube furnace to be 800-850° C., so that the temperatures of selenium powder and tungsten trioxide powder ...

Embodiment 2～36

[0038]The silicon dioxide-silicon dioxide substrate in embodiment 1 is used sapphire-sapphire substrate, graphene-graphene substrate, mica-mica substrate, glass-glass substrate, single crystal silicon-single crystal silicon silicon substrate, and these substrates Any two combinations can be replaced, and other preparation conditions remain unchanged, and tungsten diselenide nanobelts with better quality can also be obtained.

Embodiment 37～72

[0040] By vertically stacking the substrates of various two-piece combinations in Examples 2 to 36, and other preparation conditions remain unchanged, tungsten diselenide nanoribbons with good quality can also be obtained.

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Abstract

The invention discloses a method for preparing a single-layer tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the growth time of hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a tungsten diselenide nanoband is carried out by utilizing a constant-pressure chemical vapor deposition method; physicochemical characteristics of a one-dimensional transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to semiconductor properties can be displayed from the edge to the center of a wider band; the tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the special property; industrial production of the tungsten diselenide nanoband can be realized through an experimental method of the invention.

Description

technical field [0001] The invention relates to materials and microelectronic technology, in particular to a method for preparing single-layer tungsten diselenide nanobelts based on a space confinement strategy. Background technique [0002] One-dimensional nanostructures, such as nanorods, nanowires, and nanobelts, have been widely studied in the past two decades. Due to the quantum confinement effect, one-dimensional nanostructures have special electronic band structures and exhibit peculiar It has important basic research value and scientific significance. In recent years, researchers have successfully synthesized atomically thick graphene nanoribbons, and found that graphene nanoribbons with a width of less than 10 nanometers exhibit semiconductor properties, and field effect transistors prepared with them have an on-off ratio of 10. 7 . This novel one-dimensional carbon nanomaterial has broad application prospects in future nanoscale electronic devices. [0003] The ...

Claims

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Application Information

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IPC IPC(8): C01B19/00B82Y40/00
Inventor郝国林张婵段卓君
OwnerXIANGTAN UNIV