Silicon carbide film deposition using remote plasma-based methods with silicon- and carbon-containing precursors

Through the remote plasma CVD method, the silicon-containing precursor and co-reactants react with hydrogen radicals in the reaction chamber, the challenges existing in the existing PECVD process in depositing silicon carbide thin films are solved, and the deposition of high-quality silicon carbide films is achieved, with good structure and electrical properties.

CN112514030BActive Publication Date: 2025-05-13LAM RES CORP
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Patent Information

Application Number
CN201980049654.4
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2018-07-24
Filing Date
2019-07-22
Publication Date
2025-05-13
Estimated Expiration
2039-07-22

AI Technical Summary

Technical Problem

The existing PECVD processes have challenges in depositing silicon carbide films, including poor step coverage, high dielectric constant, low breakdown voltage, large leakage current, low porosity and metal surface oxidation.

Method used

Using the remote plasma CVD method, an undoped or doped silicon carbide film was formed by introducing silicon-containing precursors and co-reactants into the reaction chamber and reacting with the silicon-containing precursors using hydrogen radicals and other radicals. This method ensures the structure and performance of the membrane by selectively destroying the Si-H bond and the Si-Si bond, maintaining the Si-C bond, Si-O bond and Si-N bond.

Benefits of technology

Deposition of high-quality silicon carbide film on the substrate is achieved, with good step coverage, low dielectric constant, high breakdown voltage, low leakage current and suitable porosity, and does not oxidize the metal surface.

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Abstract

A doped or undoped silicon carbide film may be deposited using remote plasma chemical vapor deposition (CVD) techniques. One or more silicon-containing precursors are provided to a reaction chamber. Free radical species, such as hydrogen free radical species, are provided in a substantially low energy state or ground state and interact with one or more silicon-containing precursors to deposit a silicon carbide film. A carbon-containing precursor may flow with one or more silicon-containing precursors, wherein the carbon-containing precursor has one or more carbon-carbon double bonds or triple bonds, and each silicon-containing precursor is a silane-based precursor having at least one silicon atom having two or more hydrogen atoms bonded to the silicon atom.
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