An integrated passive device, a manufacturing method thereof, and a semiconductor device

Abstract

Embodiments of the present invention disclose an integrated passive device, a manufacturing method thereof, and a semiconductor device. By adopting a sandwich structure of a first flexible substrate + a glass substrate + a second flexible substrate to replace the single-layer glass substrate structure in the related art, the present invention can increase the device strength and compensate for the problem of reduced strength after punching and filling a conductive structure in the glass substrate. Moreover, by designing a three-dimensional inductor structure and a planar capacitor structure, the present invention can improve the quality factor (i.e., Q factor) of the inductor, thereby reducing losses and improving the reliability of the integrated passive device.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor device manufacturing, and particularly to an integrated passive device, a manufacturing method thereof, and a semiconductor device. Background Art

[0002] Integrated Passive Devices (IPDs) are currently widely used in microwave radio frequency circuits and their products due to their superior characteristics of independent passive components.

[0003] Integrated passive devices with a glass substrate as the main material have excellent reliability compared to products made of materials such as silicon substrates, are suitable for high-frequency applications, and achieve better electrical performance. Summary of the Invention

[0004] Embodiments of the present invention provide an integrated passive device, a manufacturing method thereof, and a semiconductor device, which can reduce signal transmission loss, improve device strength, simplify the manufacturing process, and save costs.

[0005] An integrated passive device provided by an embodiment of the present invention includes: a first flexible substrate and a second flexible substrate disposed opposite to each other, and a glass substrate located between the first flexible substrate and the second flexible substrate; wherein, the glass substrate has at least one through hole penetrating in the thickness direction; the integrated passive device further includes:

[0006] At least one inductor, the inductor includes: a first conductive structure located between the first flexible substrate and the glass substrate, a second conductive structure filled in the through hole, and a third conductive structure located between the second flexible substrate and the glass substrate; the first conductive structure and the third conductive structure are electrically connected through the second conductive structure;

[0007] At least one capacitor, the capacitor is located between the second flexible substrate and the glass substrate, and the capacitor is electrically connected to the inductor.

[0008] Optionally, in the above integrated passive device provided by an embodiment of the present invention, the first conductive structure includes: a first conductive layer located between the first flexible substrate and the glass substrate, and a first conductive adhesive layer located between the first conductive layer and the glass substrate; wherein, the orthographic projection of the through hole on the first flexible substrate is located within the orthographic projection range of the first conductive layer on the first flexible substrate, the first conductive adhesive layer includes a first body and first conductive spheres located inside the first body, and the second conductive structure is electrically connected to the first conductive layer through the first conductive spheres.

[0009] Optionally, in the above integrated passive device provided by an embodiment of the present invention, the third conductive structure includes: a second conductive layer located between the second flexible substrate and the glass substrate, a second conductive adhesive layer located between the second conductive layer and the glass substrate, and a third conductive layer located between the second conductive adhesive layer and the glass substrate; wherein, the orthographic projection of the through hole on the first flexible substrate is within the orthographic projection range of the second conductive layer on the first flexible substrate, the orthographic projection of the through hole on the first flexible substrate is within the orthographic projection range of the third conductive layer on the first flexible substrate, the second conductive adhesive layer includes a second body and second conductive spheres located inside the second body, and the second conductive structure is electrically connected to the second conductive layer through the third conductive layer and the second conductive spheres.

[0010] Optionally, in the above integrated passive device provided by an embodiment of the present invention, the capacitor is located between two adjacent inductors, the capacitor is configured to electrically connect the two adjacent inductors, and the two electrically connected inductors include a first inductor and a second inductor;

[0011] The capacitor includes: a fourth conductive layer located between the glass substrate and the second conductive layer of the first inductor, a first insulating layer located between the fourth conductive layer and the second conductive layer of the first inductor, and a fifth conductive layer located between the first insulating layer and the second conductive layer of the first inductor; wherein,

[0012] The fourth conductive layer and the third conductive layer of the second inductor are an integral structure, the fifth conductive layer is electrically connected to the second conductive layer of the first inductor, and the first insulating layer exposes each of the through holes.

[0013] Optionally, in the above integrated passive device provided by an embodiment of the present invention, there is the second conductive adhesive layer between the fifth conductive layer and the second conductive layer of the first inductor, and the fifth conductive layer is electrically connected to the second conductive layer of the first inductor through the second conductive spheres.

[0014] Optionally, in the above integrated passive device provided by an embodiment of the present invention, there is the second conductive adhesive layer between the second conductive layer of the first inductor and the second conductive layer of the second inductor, and the integrated passive device further includes a second insulating layer located between the second conductive adhesive layer and the fifth conductive layer; the second insulating layer exposes each of the through holes and exposes the fifth conductive layer.

[0015] Optionally, in the above integrated passive device provided by an embodiment of the present invention, it further includes a signal trace and a pad that are electrically connected to the first conductive layer and are exposed.

[0016] Correspondingly, an embodiment of the present invention further provides a semiconductor device, including the above-mentioned integrated passive device.

[0017] Correspondingly, an embodiment of the present invention further provides a manufacturing method for manufacturing the above-mentioned integrated passive device, including:

[0018] Providing a glass substrate, and manufacturing at least one through hole penetrating the thickness direction on the glass substrate;

[0019] Forming at least one inductor and at least one capacitor between the first flexible substrate and the second flexible substrate; wherein, the inductor includes: a first conductive structure located between the first flexible substrate and the glass substrate, a second conductive structure filled in the through hole, and a third conductive structure located between the second flexible substrate and the glass substrate; the first conductive structure and the third conductive structure are electrically connected through the second conductive structure; the capacitor is located between the second flexible substrate and the glass substrate, and the capacitor is electrically connected to the inductor.

[0020] Optionally, in the above-mentioned manufacturing method provided by an embodiment of the present invention, the forming at least one inductor and at least one capacitor between the first flexible substrate and the second flexible substrate specifically includes:

[0021] Filling the second conductive structure in the through hole;

[0022] Forming an integrated fourth conductive layer and third conductive layer on the glass substrate filled with the second conductive structure;

[0023] Forming a first insulating layer on a side of the fourth conductive layer and the third conductive layer away from the glass substrate; the first insulating layer exposes each of the through holes;

[0024] Forming a fifth conductive layer on a side of the first insulating layer away from the glass substrate;

[0025] Forming a second insulating layer on a side of the fifth conductive layer away from the glass substrate; the second insulating layer exposes each of the through holes and exposes the fifth conductive layer; the fourth conductive layer, the first insulating layer, and the fifth conductive layer constitute the capacitor;

[0026] Forming a patterned first conductive layer on the first flexible substrate;

[0027] Forming a patterned second conductive layer on the second flexible substrate;

[0028] Integrate the first flexible substrate with the first conductive layer, the first conductive adhesive layer, the glass substrate with the capacitor formed thereon, the second conductive adhesive layer, and the second flexible substrate with the second conductive layer formed thereon by pressing to form the integrated passive device.

[0029] The beneficial effects of the embodiments of the present invention are as follows:

[0030] An integrated passive device, a manufacturing method thereof, and a semiconductor device provided by embodiments of the present invention. By adopting a sandwich structure of a first flexible substrate + a glass substrate + a second flexible substrate in the present invention to replace the single-layer glass substrate structure in the related art, the device strength can be increased, and the problem of reduced strength after punching and filling the conductive structure in the glass substrate can be compensated; and by designing a three-dimensional inductor structure and a planar capacitor structure in the present invention, the quality factor (i.e., Q factor) of the inductor can be improved, thereby reducing losses and improving the reliability of the integrated passive device. Description of the Drawings

[0031] Figure 1 It is a schematic structural diagram of an integrated passive device provided in the related art;

[0032] Figure 2 It is a schematic structural diagram of an integrated passive device provided by an embodiment of the present invention;

[0033] Figure 3 It is a schematic flowchart of a manufacturing method of an integrated passive device provided by an embodiment of the present invention;

[0034] Figure 4 It is a schematic flowchart of a specific manufacturing method of an integrated passive device provided by an embodiment of the present invention;

[0035] Figures 5A - 5I It is a schematic structural diagram of an integrated passive device after each manufacturing step in the manufacturing method of an integrated passive device provided by an embodiment of the present invention;

[0036] Figure 6 It is a schematic structural diagram of a semiconductor device provided by an embodiment of the present invention. Detailed Embodiments

[0037] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following will describe in detail the specific embodiments of the integrated passive device, its manufacturing method, and the semiconductor device provided by the embodiments of the present invention with reference to the drawings. It should be understood that the following described preferred embodiments are only used to illustrate and explain the present invention and are not used to limit the present invention. And without conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

[0038] The thickness, size, and shape of each thin film layer in the drawings do not reflect the true scale of the integrated passive device, and the purpose is only to schematically illustrate the content of the present invention.

[0039] In the related art, the structure of a three-dimensional glass-based integrated passive device is as Figure 1 shown. The film layer structure from top to bottom is: solder ball 101, first insulating layer 102, second insulating layer 103, first electroplated copper 104, third insulating layer 105, first electrode 106, fourth insulating layer 107, second electrode 108, glass substrate 109, copper in hole 110, second electroplated copper 111, fifth insulating layer 112, and sixth insulating layer 113. Among them, the second electrode 108, the fourth insulating layer 107, and the first electrode 106 form a MIM (Metal-Insulation-Metal) capacitor; the first electroplated copper 104, the second electrode 108, the copper in hole 110, and the second electroplated copper 111 form an inductor. Figure 1 The manufacturing process flow is as follows: First, a glass substrate 109 with through holes is fabricated, and the positions of the through holes should correspond to the surface pad patterns; the through holes are metallized using a coating process (i.e., filling copper in hole 110 in the through holes) to achieve electrical connection between the upper and lower surfaces of the glass substrate 109; patterning processes are performed on the upper and lower surfaces of the glass substrate 109 according to product requirements, including the above-mentioned insulating layers and electrodes. The insulating layer can be made of inorganic materials such as silicon nitride and silicon oxide or organic materials such as acrylic and polyimide. To prevent the oxidation of the electroplated copper mentioned above, an inorganic insulating layer 103 / 112 plus an organic insulating layer 102 / 113 structure is often used after electroplating copper. The electrodes can be made of metal materials such as copper, aluminum, and gold or pastes such as silver paste and copper paste. Finally, windows are opened in the first insulating layer 102 and the second insulating layer 103 to expose the first electroplated copper 104, and the solder balls 101 (bumps) required for packaging are fabricated. Currently Figure 1 The main problems of the structure shown are as follows: The metal traces (104, 111) that are part of the inductor need to use electroplated copper, and the thickness of the electroplated copper is often greater than 5 μm. When using the electroplating process for production, the film thickness uniformity is poor, and the surface roughness is large. Due to the skin effect, the rough electroplated copper surface often causes an increase in signal transmission loss. If a chemical mechanical polishing (CMP) process is used to flatten the electroplated copper surface, on the one hand, it will increase the process cost, and on the other hand, pressure will be applied to the glass substrate 109 during the polishing process, which is extremely likely to cause the glass substrate to break. At the same time, as the thickness of the electroplated copper increases, the stress between the electroplated copper and other film layers will also continuously increase. And in order to prevent the oxidation of the first electroplated copper 104, the first insulating layer 102 and the second insulating layer 103 need to be deposited before fabricating the solder balls 101. This process is generally a high-temperature process with a temperature exceeding 200 °C, which is extremely likely to cause thermal expansion between the first electroplated copper 104 and the underlying film layers, resulting in problems such as cracking or warping of the glass substrate, thus failing to meet the reliability requirements of the integrated passive device.

[0040] In view of this, an embodiment of the present invention provides an integrated passive device, such as Figure 2 As shown, it includes: a first flexible substrate 14 and a second flexible substrate 1 disposed opposite to each other, and a glass substrate 9 located between the first flexible substrate 14 and the second flexible substrate 1; wherein, the glass substrate 9 has at least one through hole 91 penetrating in the thickness direction; the integrated passive device further includes:

[0041] At least one inductor (such as L1, L2, L3), the inductor (L1, L2, L3) includes: a first conductive structure 20 located between the first flexible substrate 14 and the glass substrate 9, a second conductive structure 10 filled in the through hole 91, and a third conductive structure 30 located between the second flexible substrate 1 and the glass substrate 9; the first conductive structure 20 and the third conductive structure 30 are electrically connected through the second conductive structure 10;

[0042] At least one capacitor C, the capacitor C is located between the second flexible substrate 1 and the glass substrate 9, and the capacitor C is electrically connected to the inductor (L1, L2, L3).

[0043] The above integrated passive device provided by the embodiment of the present invention, by adopting the sandwich structure of the first flexible substrate + glass substrate + second flexible substrate to replace the single-layer glass substrate structure in the related art, can increase the device strength and compensate for the problem of reduced strength after the glass substrate is drilled and filled with the second conductive structure; and the present invention can improve the quality factor (i.e., Q factor) of the inductor by designing a three-dimensional inductor structure and a planar capacitor structure, thereby reducing losses and improving the reliability of the integrated passive device.

[0044] In specific implementation, by using the first flexible substrate and the second flexible substrate to respectively replace the double-layer insulating layer structures 102 / 103 and 112 / 113 in the related art, it can play an insulating and protective role on the basis of reducing the film layer thickness and increasing the device strength.

[0045] In specific implementation, in the above integrated passive device provided by the embodiment of the present invention, such as Figure 2As shown in the figure, the first conductive structure 20 includes: a first conductive layer 13 located between the first flexible substrate 14 and the glass substrate 9, and a first conductive adhesive layer located between the first conductive layer 13 and the glass substrate 9; wherein, the first conductive adhesive layer includes a first body 12 and first conductive spheres 11 located inside the first body 12. The second conductive structure 10 is electrically connected to the first conductive layer 13 through the first conductive spheres 11. The orthographic projection of the through hole 91 on the first flexible substrate 14 is within the orthographic projection range of the first conductive layer 13 on the first flexible substrate 14. Specifically, the material of the first conductive layer 13 is rolled copper. That is, when manufacturing the first conductive layer 13, a whole layer of rolled copper is deposited, and then the patterned first conductive layer 13 is manufactured through a photolithography process. The surface flatness of the rolled copper is good, and there is no need to polish the surface of the electroplated copper using the CMP process as in the related art, which saves costs and enables the production of large-sized substrates. At the same time, the risk of breakage of the glass substrate during polishing can be reduced; due to the good surface flatness and thickness uniformity of the rolled copper, the signal transmission loss can be greatly reduced.

[0046] In specific implementation, in the above integrated passive device provided by the embodiment of the present invention, as Figure 2 As shown in the figure, the third conductive structure 30 includes: a second conductive layer 2 located between the second flexible substrate 1 and the glass substrate 9, a second conductive adhesive layer located between the second conductive layer 2 and the glass substrate 9, and a third conductive layer 8 located between the second conductive adhesive layer and the glass substrate 9; wherein, the second conductive adhesive layer includes a second body 3 and second conductive spheres 4 located inside the second body 3. The second conductive structure 10 is electrically connected to the second conductive layer 2 through the third conductive layer 8 and the second conductive spheres 4. The orthographic projection of the through hole 91 on the first flexible substrate 14 is within the orthographic projection range of the second conductive layer 2 on the first flexible substrate 14, and the orthographic projection of the through hole 91 on the first flexible substrate 14 is within the orthographic projection range of the third conductive layer 8 on the first flexible substrate 14. Specifically, the material of the second conductive layer 2 is rolled copper. That is, when manufacturing the second conductive layer 2, a whole layer of rolled copper is deposited, and then the patterned second conductive layer 2 is manufactured through a photolithography process. The surface flatness of the rolled copper is good, and there is no need to polish the surface of the electroplated copper using the CMP process as in the related art, which saves costs and enables the production of large-sized substrates. At the same time, the risk of breakage of the glass substrate during polishing can be reduced; due to the good surface flatness and thickness uniformity of the rolled copper, the signal transmission loss can be greatly reduced.

[0047] In specific implementation, in the above integrated passive device provided by the embodiment of the present invention, as Figure 2As shown, the material of the second conductive structure 10 can be copper. The first body 12 of the first conductive adhesive layer (constituted by 11 and 12) can be an anisotropic conductive film (ACF). The second conductive structure 10 and the first conductive layer 13 are bonded and connected through the first conductive adhesive layer (constituted by 11 and 12). The first conductive spheres 11 and the second conductive spheres 4 can be solid nickel balls. The hardness of the nickel balls is greater than that of copper. Under the action of pressure, the nickel balls can be embedded into the second conductive structure 10 to achieve a larger and more effective contact area. At the same time, the first body 12 can insulate between the first conductive layers 13 with different inductances, and the second body 3 can insulate between the second conductive layers 2 with different inductances.

[0048] In specific implementation, in the above integrated passive device provided by the embodiment of the present invention, as Figure 2 shown, the capacitor C can be located between two adjacent inductors (such as L1 and L2). The capacitor C is configured to be electrically connected to the two adjacent inductors (L1 and L2) to achieve the series connection of the capacitor C and the inductors (L1 and L2). The series-connected capacitor C and inductors (L1, L2, L3) achieve the filter function. The two electrically connected inductors (L1 and L2) include the first inductor L1 and the second inductor L2;

[0049] The capacitor C includes: a fourth conductive layer 40 located between the glass substrate 9 and the second conductive layer 2 of the first inductor L1, a first insulating layer 7 located between the fourth conductive layer 40 and the second conductive layer 2 of the first inductor L1, and a fifth conductive layer 6 located between the first insulating layer 7 and the second conductive layer 2 of the first inductor L1; wherein,

[0050] The fourth conductive layer 40 and the third conductive layer 8 of the second inductor L2 are an integral structure. The fifth conductive layer 6 is electrically connected to the second conductive layer 2 of the first inductor L1. The first insulating layer 7 exposes each through hole 91. Specifically, the material of the first insulating layer 7 can be an organic material such as resin or PI.

[0051] Specifically, by designing the three-dimensional inductor structure and the planar capacitor structure, the present invention can improve the quality factor (i.e., Q factor) of the inductor, thereby reducing the signal transmission loss and improving the reliability of the integrated passive device.

[0052] In specific implementation, in the above integrated passive device provided by the embodiment of the present invention, as Figure 2 shown, the materials of the third conductive layer 8, the fourth conductive layer 40 and the fifth conductive layer 6 can be copper, aluminum, gold, silver paste or copper paste.

[0053] In specific implementation, in the above integrated passive device provided by the embodiment of the present invention, as Figure 2As shown, there is a second conductive adhesive layer (formed by 3 and 4) between the fifth conductive layer 6 and the second conductive layer 2 of the first inductor L1, and the fifth conductive layer 6 is electrically connected to the second conductive layer 2 of the first inductor L1 through the second conductive sphere 4.

[0054] In specific implementation, in the above integrated passive device provided by the embodiment of the present invention, as Figure 2 shown, there is a second conductive adhesive layer (formed by 3 and 4) between the second conductive layer 2 of the first inductor L1 and the second conductive layer 2 of the second inductor L2. The integrated passive device further includes a second insulating layer 5 located between the second conductive adhesive layer (formed by 3 and 4) and the fifth conductive layer 6; the second insulating layer 5 exposes each through hole 91 and exposes the fifth conductive layer 6. Specifically, the material of the second insulating layer 5 can be an inorganic material such as silicon nitride, silicon oxide, or silicon oxynitride.

[0055] In specific implementation, in the above integrated passive device provided by the embodiment of the present invention, as Figure 2 shown, it further includes a bare signal trace 131 and a pad 132 that are electrically connected to the first conductive layer 13. Specifically, the signal trace 131 can be used as the signal trace of the inductor, and the pad 132 can be used as the signal input / output electrode. When fabricating the first conductive layer 13 of the inductor, the signal trace 131 and the pad 132 can be formed through a single patterning process, and the signal trace 131 and the pad 132 can be electrically connected to an external power supply by using a wire bonding process, without the Bump fabrication process in the related art, simplifying the process and reducing costs.

[0056] Based on the same inventive concept, the embodiment of the present invention also provides a manufacturing method for manufacturing the above integrated passive device, as Figure 3 shown, including:

[0057] S301. Provide a glass substrate and fabricate at least one through hole penetrating the thickness direction on the glass substrate;

[0058] S302. Form at least one inductor and at least one capacitor between the first flexible substrate and the second flexible substrate; wherein, the inductor includes: a first conductive structure located between the first flexible substrate and the glass substrate, a second conductive structure filled in the through hole, and a third conductive structure located between the second flexible substrate and the glass substrate; the first conductive structure and the third conductive structure are electrically connected through the second conductive structure; the capacitor is located between the second flexible substrate and the glass substrate, and the capacitor is electrically connected to the inductor.

[0059] In specific implementation, in the above manufacturing method provided by the embodiment of the present invention, forming at least one inductor and at least one capacitor between the first flexible substrate and the second flexible substrate, as Figure 4 shown, specifically may include:

[0060] S401. Fill the second conductive structure in the through hole;

[0061] Specifically, as Figure 5A shown, provide a glass substrate 9 with a thickness of 0.2 mm to 0.3 mm; as Figure 5B shown, fabricate at least one through hole 91 penetrating the thickness direction on the glass substrate 9. The diameter of the through hole 91 can be 50 μm, and the cross-sectional structure of the through hole 91 can be columnar, funnel-shaped, hourglass-shaped, etc. In the embodiment of the present invention, the hourglass shape is taken as an example for illustration; as Figure 5C shown, fill the second conductive structure 10 in the through hole 91 to metallize the through hole 91 of the glass substrate 9, so as to realize the electrical signal conduction between the upper and lower surfaces of the glass substrate 9. Taking electroplating Cu as an example, the thickness of Cu on the inner wall of the through hole 91 is more than 5 μm. Preferably, the through hole 91 is filled to be solid. If the through hole 91 is hollow, resin filling is required after metallization to ensure the normal fabrication of subsequent film layers.

[0062] S402. Form an integral fourth conductive layer and third conductive layer on the glass substrate filled with the second conductive structure;

[0063] S403. Form a first insulating layer on the side of the fourth conductive layer and the third conductive layer facing away from the glass substrate; the first insulating layer exposes each through hole;

[0064] S404. Form a fifth conductive layer on the side of the first insulating layer facing away from the glass substrate;

[0065] S405. Form a second insulating layer on the side of the fifth conductive layer facing away from the glass substrate; the second insulating layer exposes each through hole and exposes the fifth conductive layer; the fourth conductive layer, the first insulating layer and the fifth conductive layer form a capacitor;

[0066] Specifically, as Figure 5D shown, through the above steps S402 - S405, a patterned structure including a first insulating layer 7, a second insulating layer 5, a third conductive layer 8, a fourth conductive layer 40 and a fifth conductive layer 6 is completed on the upper surface of the glass substrate 9 by using an exposure film process, forming a multi-layer metal trace and a MIM capacitor structure (C) to realize a capacitor C with high precision and high uniformity.

[0067] S406. Form a patterned first conductive layer on the first flexible substrate;

[0068] Specifically, as Figure 5E shown, deposit a full-surface first conductive layer 13 on the first flexible substrate 14. The material of the first conductive layer 13 is rolled copper, and the thickness of the first conductive layer 13 can be 5 μm to 20 μm. The material of the first flexible substrate 14 can be materials such as LCP and PI; as Figure 5FAs shown, the first conductive layer 13 on the entire surface is patterned. The patterning can be performed using processes such as photolithography and laser etching to form the patterned first conductive layer 13. The patterned first conductive layer 13 includes signal traces 131 and pad traces 132, and can be electrically connected to the outside through forms such as bonding leads or FPC Bonding.

[0069] S407. Form a patterned second conductive layer on the second flexible substrate;

[0070] As Figure 5G shown, deposit the second conductive layer 2 on the entire surface of the second flexible substrate 1. The material of the second conductive layer 2 is rolled copper, and the thickness of the second conductive layer 2 can be 5μm - 20μm. The material of the second flexible substrate 1 can be materials such as LCP and PI; As Figure 5H shown, pattern the second conductive layer 2 on the entire surface. The patterning can be performed using processes such as photolithography and laser etching to form the patterned second conductive layer 2.

[0071] S408. Integrate the first flexible substrate with the first conductive layer, the first conductive adhesive layer, the glass substrate with the capacitor, the second conductive adhesive layer, and the second flexible substrate with the second conductive layer together by pressing to form an integrated passive device;

[0072] Specifically, as Figure 5I shown, combine Figure 5H , the second conductive adhesive layer (constituted by 3 and 4), Figure 5D , the first conductive adhesive layer (constituted by 11 and 12), Figure 5F together by pressing to form the Figure 2 integrated passive device shown. Among them, the fifth conductive layer 6, the third conductive layer 8, and the second conductive structure 10 on the glass substrate 9 are electrically connected to the second conductive layer 2 and the first conductive layer 13 through the solid nickel balls in the ACF adhesive. Since the nickel balls in the ACF adhesive are evenly distributed, the second insulating layer 5 acts as a barrier layer to cover the non - conductive areas and provide insulation protection for the non - connection areas.

[0073] Based on the same inventive concept, an embodiment of the present invention further provides a semiconductor device. As Figure 6 shown, it includes the above - mentioned integrated passive device provided by the embodiment of the present invention.

[0074] In specific implementation, in the above - mentioned semiconductor device provided by the embodiment of the present invention, the signal traces 131 and the pads 132 can be electrically connected to the external power supply 200 through wire bonding process (100) or FPC Bonding and other forms.

[0075] The semiconductor device may be an electronic product such as a mobile phone, a tablet, a wearable device, etc., which is not limited herein. For the implementation of the semiconductor device, reference may be made to the embodiments of the above integrated passive devices, and the repeated parts will not be described again.

[0076] An integrated passive device, a manufacturing method thereof, and a semiconductor device provided by an embodiment of the present invention. By adopting a sandwich structure of a first flexible substrate + a glass substrate + a second flexible substrate, the present invention replaces the single-layer glass substrate structure in the related art, which can increase the device strength and compensate for the problem of reduced strength after punching and filling a conductive structure in the glass substrate; and by designing a three-dimensional inductor structure and a planar capacitor structure, the present invention can improve the quality factor (i.e., Q factor) of the inductor, thereby reducing losses and improving the reliability of the integrated passive device.

[0077] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention also intends to include these changes and modifications.

Claims

1. An integrated passive device, characterized in that: include: A first flexible substrate and a second flexible substrate arranged opposite to each other, and a glass substrate located between the first flexible substrate and the second flexible substrate; wherein the glass substrate has at least one through hole extending through the thickness direction; at least one inductor, the inductor comprising: a first conductive structure located between the first flexible substrate and the glass substrate, a second conductive structure filled in the through hole, and a third conductive structure located between the second flexible substrate and the glass substrate; The first conductive structure includes: a first conductive layer located between the first flexible substrate and the glass substrate, and a first conductive adhesive layer located between the first conductive layer and the glass substrate; the first conductive structure and the third conductive structure are electrically connected via the second conductive structure; the orthographic projection of the through hole on the first flexible substrate is located within the orthographic projection of the first conductive layer on the first flexible substrate; the first conductive adhesive layer includes: a first body and a first conductive sphere located within the first body; the second conductive structure is electrically connected to the first conductive layer via the first conductive sphere; At least one capacitor is located between the second flexible substrate and the glass substrate, and the capacitor is electrically connected to the inductor.

2. The integrated passive device according to claim 1, characterized in that The third conductive structure includes: a second conductive layer located between the second flexible substrate and the glass substrate, a second conductive adhesive layer located between the second conductive layer and the glass substrate, and a third conductive layer located between the second conductive adhesive layer and the glass substrate; wherein the orthographic projection of the through hole on the first flexible substrate is located within the orthographic projection of the second conductive layer on the first flexible substrate, and the orthographic projection of the through hole on the first flexible substrate is located within the orthographic projection of the third conductive layer on the first flexible substrate; the second conductive adhesive layer includes a second body and a second conductive sphere located within the second body; and the second conductive structure is electrically connected to the second conductive layer via the third conductive layer and the second conductive sphere.

3. The integrated passive device according to claim 2, characterized in that The capacitor is located between two adjacent inductors, and the capacitor is configured to electrically connect the two adjacent inductors, wherein the two electrically connected inductors include a first inductor and a second inductor; The capacitor includes: a fourth conductive layer located between the glass substrate and the second conductive layer of the first inductor, a first insulating layer located between the fourth conductive layer and the second conductive layer of the first inductor, and a fifth conductive layer located between the first insulating layer and the second conductive layer of the first inductor; wherein, The fourth conductive layer and the third conductive layer of the second inductor are an integrated structure, the fifth conductive layer is electrically connected to the second conductive layer of the first inductor, and the first insulating layer exposes the through holes.

4. The integrated passive device according to claim 3, characterized in that The second conductive adhesive layer is provided between the fifth conductive layer and the second conductive layer of the first inductor, and the fifth conductive layer is electrically connected to the second conductive layer of the first inductor through the second conductive spheres.

5. The integrated passive device according to claim 4, characterized in that: A second conductive adhesive layer is provided between the second conductive layer of the first inductor and the second conductive layer of the second inductor. The integrated passive device further includes a second insulating layer located between the second conductive adhesive layer and the fifth conductive layer. The second insulating layer exposes the through holes and the fifth conductive layer.

6. The integrated passive device according to any one of claims 1 to 5, characterized in that: It also includes exposed signal traces and pads that are electrically connected to the first conductive layer.

7. A semiconductor device, characterized in that: The invention comprises the integrated passive device according to any one of claims 1 to 6.

8. A method for manufacturing the integrated passive device according to any one of claims 1 to 6, characterized in that: include: Providing a glass substrate, and forming at least one through hole extending through the thickness direction on the glass substrate; At least one inductor and at least one capacitor are formed between the first flexible substrate and the second flexible substrate; wherein the inductor includes: a first conductive structure located between the first flexible substrate and the glass substrate, a second conductive structure filled in the through-hole, and a third conductive structure located between the second flexible substrate and the glass substrate; the first conductive structure and the third conductive structure are electrically connected via the second conductive structure; the capacitor is located between the second flexible substrate and the glass substrate, and the capacitor is electrically connected to the inductor.

9. The production method according to claim 8, characterized in that: The forming of at least one inductor and at least one capacitor between the first flexible substrate and the second flexible substrate specifically includes: filling a second conductive structure in the through hole; forming a fourth conductive layer and a third conductive layer of an integrated structure on the glass substrate filled with the second conductive structure; forming a first insulating layer on a side of the fourth conductive layer and the third conductive layer facing away from the glass substrate; the first insulating layer exposes each of the through holes; forming a fifth conductive layer on a side of the first insulating layer facing away from the glass substrate; forming a second insulating layer on a side of the fifth conductive layer facing away from the glass substrate; exposing the through holes and the fifth conductive layer through the second insulating layer; and forming the capacitor through the fourth conductive layer, the first insulating layer, and the fifth conductive layer; forming a patterned first conductive layer on the first flexible substrate; forming a patterned second conductive layer on the second flexible substrate; The first flexible substrate formed with the first conductive layer, the first conductive adhesive layer, the glass substrate formed with the capacitor, the second conductive adhesive layer and the second flexible substrate formed with the second conductive layer are integrated together by lamination to form the integrated passive device.

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