Multi-charged particle beam mapping device and adjustment method thereof

Abstract

Provided are a multi-charged particle beam mapping device and an adjustment method thereof that can easily and accurately correct astigmatism of multiple beams. The multi-charged particle beam mapping device includes: an objective lens for adjusting the focal position of the multiple beams; an astigmatism correction element for correcting the astigmatism of the multiple beams; an inspection aperture for passing one of the multiple beams; a deflector for deflecting the multiple beams and scanning the multiple beams across the inspection aperture; a current detector for detecting the beam current of each of the multiple beams after passing through the inspection aperture; a beam image generator for generating a beam image based on the beam current; a feature quantity calculator for summing the brightness of the beam images in a first direction to generate a first waveform and calculating a first feature quantity based on the first waveform; summing the brightness of the beam images in a second direction different from the first direction to generate a second waveform and calculating a second feature quantity based on the second waveform; and a parameter calculator for calculating an excitation parameter to be set for the astigmatism correction element based on the first and second feature quantities.

Description

[0001] [Related Application]

[0002] This application claims the benefit of priority based on Japanese Patent Application No. 2021-047496 (filing date: March 22, 2021), the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to a multi-charged particle beam delineation device and an adjustment method thereof. Background Art

[0004] With the increasing integration of LSIs, the circuit line widths of semiconductor devices have become increasingly fine. The method for forming circuit patterns on these semiconductor devices using exposure masks (masks used in steppers or scanners, also known as reticles) employs electron beam lithography technology, which offers excellent resolution.

[0005] Development of electron beam lithography systems using multiple beams is underway to replace conventional single-beam lithography systems, which deflect a single beam to direct the beam toward the desired location on a substrate. Using multiple beams allows for more beams to be irradiated compared to lithography using a single electron beam, significantly improving productivity. In multi-beam lithography systems, for example, electron beams emitted from an electron gun are passed through an aperture member having multiple holes to form multiple beams. A blanking aperture array controls the blanking of each beam, and the remaining unobstructed beams are optically reduced and irradiated onto a substrate placed on a movable stage.

[0006] In multi-beam imaging, optical system adjustments such as focusing and astigmatism adjustment are crucial. Conventionally, the objective lens changes its focal position while scanning a linear reflective mark on the stage to detect reflected electrons, and focusing is performed based on the distribution obtained at each focal position. Japanese Patent Application Laid-Open No. 2018-82120 describes a method for scanning an inspection aperture with multiple beams to create a beam image. The optimal focal position is then determined based on the characteristics of the beam image, and the objective lens is then controlled.

[0007] Japanese Patent Application Laid-Open No. 2018-82120 describes detecting the contours of individual beams within a beam image, performing ellipse fitting, and controlling the excitation current value of the astigmatism correction coil to approximate a true circle. However, this method suffers from fitting failure in situations with large blur or large amounts of astigmatism, making analysis difficult. Summary of the Invention

[0008] The present invention provides a multi-charged particle beam mapping device and an adjustment method thereof, which can perform astigmatism correction of multiple beams simply and with high precision.

[0009] A multi-charged particle beam drawing device according to one embodiment of the present invention includes: an objective lens for adjusting the focal position of multiple beams; an astigmatism correction element for correcting the astigmatism of the multiple beams; a stage for placing a substrate as a drawing object; an inspection aperture provided on the stage for allowing one of the multiple beams to pass through; a current detector for detecting the beam current of each beam of the multiple beams after passing through the inspection aperture; a deflector for deflecting the multiple beams and scanning the multiple beams on the inspection aperture; a beam image production unit for producing a beam image based on the detected beam current; a feature quantity calculation unit for adding the brightness of the beam images in a first direction to generate a first waveform and calculating a first feature quantity based on the first waveform, adding the brightness of the beam images in a second direction different from the first direction to generate a second waveform and calculating a second feature quantity based on the second waveform; and a parameter calculation unit for calculating excitation parameters set for the astigmatism correction element based on the first feature quantity and the second feature quantity. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 This is a schematic diagram of a multi-charged particle beam mapping device according to an embodiment of the present invention.

[0011] Figure 2 This is a schematic diagram of the aperture component.

[0012] Figure 3 This is a flowchart illustrating the astigmatism adjustment method according to this embodiment.

[0013] Figure 4A is a diagram showing a beam image, Figure 4B and Figure 4C It is a diagram showing the brightness addition waveform.

[0014] Figure 5A 、 Figure 5B This is a graph showing an example of the relationship between the lens value and the feature quantity.

[0015] Figure 6 This is a graph showing an example of the relationship between the lens value and the feature quantity.

[0016] Figure 7 It is a diagram showing the brightness addition waveform.

[0017] Figure 8 3 is a diagram showing a waveform of the brightness addition after weighting.

[0018] Figure 9A 、 Figure 9B This is a graph showing an example of the relationship between the lens value and the feature quantity.

[0019] Figure 10 This is a diagram illustrating the direction of brightness addition.

[0020] Description of Reference Numerals

[0021] 2 Electron beam column

[0022] 4 Electron gun

[0023] 6 Illumination lens

[0024] 8-aperture components

[0025] 10 Blanking Aperture Array

[0026] 12 Zooming out

[0027] 14 Restriction hole component

[0028] 16 Objective lens

[0029] 17 Deflector

[0030] 18 Astigmatism correction coil

[0031] 20 Drawing Room

[0032] 22 XY stage

[0033] 32 Control Computer

[0034] 34 Deflection control circuit

[0035] 36 Lens control circuit

[0036] 38 Coil control circuit

[0037] 40 Multi-beam inspection aperture (inspection aperture)

[0038] 50 Current detector

[0039] 60 Drawing data processing unit

[0040] 61 Drawing control unit

[0041] 62 Beam Image Production Department

[0042] 63 Feature Calculation Unit

[0043] 67 Optimal coil value detection unit DETAILED DESCRIPTION

[0044] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0045] Figure 1This is a schematic diagram of a multi-charged particle beam imaging device according to an embodiment of the present invention. In this embodiment, an electron beam is used as an example of a charged particle beam. However, the charged particle beam is not limited to an electron beam and may also be another charged particle beam such as an ion beam.

[0046] This drawing apparatus includes: a drawing section W for irradiating a substrate 24 to be drawn with an electron beam to draw a desired pattern; and a control section C for controlling the operation of the drawing section W.

[0047] The drawing unit W includes an electron beam column 2 and a drawing chamber 20. Arranged within the electron beam column 2 are an electron gun 4, an illumination lens 6, an aperture member 8, a blanking aperture array 10, a reduction lens 12, a limiting aperture member 14, an objective lens 16, a deflector 17, and an astigmatism correction coil 18.

[0048] An XY stage 22 is disposed in the drawing chamber 20. A substrate 24 to be drawn is placed on the XY stage 22. The substrate 24 to be drawn includes, for example, a wafer, and an exposure mask for transferring a pattern to the wafer using a stepper using an excimer laser as a light source, a reduction projection exposure device such as a scanner, or an extreme ultraviolet (EUV) exposure device.

[0049] Furthermore, a multi-beam inspection device is located on the XY stage 22 at a position different from that on which the substrate 24 is mounted. This multi-beam inspection device includes a multi-beam inspection aperture 40 (hereinafter referred to as "inspection aperture 40") and a current detector 50. The height of the inspection aperture 40 can be adjusted by an adjustment mechanism (not shown). The inspection aperture 40 is preferably positioned at the same height as the substrate 24.

[0050] The control unit C includes a control computer 32, a deflection control circuit 34, a lens control circuit 36, and a coil control circuit 38. The deflection control circuit 34 is connected to the deflector 17. The lens control circuit 36 ​​is connected to the objective lens 16. The coil control circuit 38 is connected to the astigmatism correction coil 18.

[0051] The control computer 32 includes a mapping data processing unit 60, a mapping control unit 61, a beam image generator 62, a feature value calculator 63, and an optimal coil value calculator 67 (parameter calculator). Each component of the control computer 32 can be composed of hardware such as circuits or software such as programs that execute these functions. If composed of software, the program that implements these functions can be stored on a recording medium and read and executed by the computer including the circuits.

[0052] A storage device (not shown) stores drawing data that converts design data (layout data) into a format for a drawing device. The drawing data processing unit 60 reads the drawing data from the storage device, performs multi-stage data conversion processing, and generates emission data. Emission data is generated for each pixel, and the drawing time (irradiation time) is calculated. For example, when no pattern is formed on the target pixel, since there is no beam irradiation, an identification code is defined as a drawing time of zero or no beam irradiation. Here, the maximum drawing time T (maximum exposure time) in a multi-beam irradiation is pre-set. The irradiation time of each beam actually irradiated is preferably calculated in proportion to the calculated area density of the pattern. In addition, the irradiation time of each beam finally calculated is preferably a time equivalent to the corrected irradiation amount, which is obtained by correcting the dimensional variation caused by the proximity effect, blurring effect, load effect, etc. (not shown). Therefore, the irradiation time of each beam actually irradiated can be different for each beam. The drawing time (irradiation time) of each beam is calculated using the value within the maximum irradiation time T. Furthermore, the drawing data processing unit 60 uses the calculated irradiation time data of each pixel as data for beams drawing the pixel, and generates irradiation time arrangement data arranged in the arrangement order of each beam for each multi-beam emission.

[0053] The deflection control circuit 34 uses the irradiation time arrangement data (emission data) to generate deflection amount data for deflecting the multi-beam. The drawing control unit 61 outputs control signals for executing the drawing process to the deflection control circuit 34 and a control circuit (not shown) that drives the drawing unit W. Based on the control signals, the drawing unit W uses the multi-beam to draw the desired pattern on the substrate 24. Specifically, the operation is as follows.

[0054] The electron beam 30 emitted from the electron gun 4 passes through the illumination lens 6 and illuminates the entire aperture member 8 substantially vertically. Figure 2 This is a conceptual diagram showing the structure of aperture member 8. Aperture member 8 is formed with openings 80 arranged in a matrix with a predetermined pitch, consisting of m rows in the vertical direction (y-direction) and n rows in the horizontal direction (x-direction) (m, n ≥ 2). For example, 512 rows by 512 rows of openings 80 are formed. Each opening 80 is a rectangular shape with the same dimensions. Alternatively, each opening 80 may be a circle with the same diameter.

[0055] The electron beam 30 illuminates the area including all the openings 80 of the aperture member 8. By passing a portion of the electron beam 30 through each of the plurality of openings 80, a Figure 1 Multiple beams 30a-30e are shown.

[0056] In the blanking aperture array 10, through-holes are formed corresponding to the positions of the openings 80 of the aperture member 8. A blanker, consisting of a pair of two electrodes, is placed in each through-hole. Electron beams 30a to 30e passing through each through-hole are independently deflected by the voltage applied by the blanker. This deflection controls the blanking of each beam. The blanking aperture array 10 blanks and deflects each of the multiple beams that pass through the multiple openings 80 of the aperture member 8.

[0057] After passing through the blanking aperture array 10, the multiple beams 30a to 30e have their respective beam sizes and arrangement pitches reduced by the reduction lens 12, and then travel toward the central opening formed in the limiting aperture member 14. The electron beams deflected by the blankers of the blanking aperture array 10 have their orbits shifted, causing their positions to deviate from the central opening of the limiting aperture member 14, resulting in the electron beams being blocked by the limiting aperture member 14. Meanwhile, the electron beams not deflected by the blankers of the blanking aperture array 10 pass through the central opening of the limiting aperture member 14.

[0058] The limiting aperture member 14 shields each electron beam that has been deflected to an OFF state by the blanker of the blanking aperture array 10. Furthermore, the beam that passes through the limiting aperture member 14 from beam ON to beam OFF becomes a single-emitted electron beam.

[0059] The electron beams 30a to 30e that have passed through the limiting aperture 14 are focused by the objective lens 16, and form a pattern image having a desired reduction ratio on the substrate 24. The electron beams (the entire multi-beam) that have passed through the limiting aperture 14 are collectively deflected in the same direction by the deflector 17 and irradiated onto the substrate 24.

[0060] The multiple beams irradiated at once are ideally arranged at a pitch obtained by multiplying the pitch of the multiple openings 80 of the aperture member 8 by the desired reduction ratio. The drawing device performs a drawing operation using a raster scanning method, continuously and sequentially irradiating the emission beams. When drawing the desired pattern, the necessary beams are controlled to be beam-on (B) according to the pattern through blanking control. As the XY stage 22 continuously moves, the deflector 17 controls the beam irradiation position so that it tracks the movement of the XY stage 22.

[0061] In such a drawing apparatus, in order to improve drawing accuracy, it is necessary to adjust the optical system and correct astigmatism. In this embodiment, a multi-beam beam inspection apparatus having an inspection aperture 40 and a current detector 50 is used to inspect the beams and adjust the optical system.

[0062] The inspection aperture 40 is limited such that only one electron beam can pass through, for example, a through-hole is formed in the central part. When the beam pitch of the multiple beams on the substrate 24 is set to P and the size of one (1) beam is set to S, it is preferable that the diameter φ1 of the through-hole satisfies S < φ1 < P - S. Since S < P - S, the beam pitch P is greater than twice the beam size S.

[0063] By making the diameter φ1 larger than the beam size S, the entire one electron beam can pass through the through-hole, which can improve the S / N ratio. The diameter φ1 is preferably as large as possible so that it is easy to find the beam and the hole will not be blocked by foreign objects.

[0064] In addition, by making the diameter φ1 smaller than P - S, when scanning multiple beams, two adjacent beams (a part of them) will not pass through the through-hole simultaneously. Therefore, the through-hole can allow only one electron beam among the multiple beams to pass through.

[0065] One electron beam that has passed through the through-hole of the inspection aperture 40 is incident on the current detector 50 to detect the beam current. The current detector 50 can use, for example, an SSD (semiconductor detector (solid - state detector)). The detection result of the current detector 50 is notified to the control computer 32.

[0066] Next, use Figure 3 the flowchart shown to illustrate the method of adjusting astigmatism.

[0067] Move the XY stage 22 and position the inspection aperture 40 at a position where multiple beams can be irradiated (step S1).

[0068] The coil control circuit 38 changes and sets the excitation parameters (excitation current value, astigmatism correction coil value) of the astigmatism correction coil 18 (astigmatism correction element) for correcting astigmatism (step S2). As described later, the astigmatism correction coil value is set to be variable among multiple values within a preset range. First, the astigmatism correction coil value is set to E1.

[0069] The lens control circuit 36 changes and sets the excitation parameters (excitation current value, lens value) of the objective lens 16 (step S3). As described later, the lens value is set to be variable among multiple values within a preset range.

[0070] The deflector 17 deflects the multi-beams in the XY directions, scanning the inspection aperture 40, and sequentially switches the electron beams passing through the through-holes (step S4). The current detector 50 detects the beam current. The scanning direction is not limited to the XY direction (the direction of the beam array arrangement) and can be any direction. The multi-beams used for scanning do not need to be all beams formed by passing through the opening 80 of the aperture member 8; only a portion of the beams can be used. That is, the inspection aperture 40 can be scanned by setting the blankers of some of the blankers in the blanking aperture array 10 to beam-on and the remaining blankers to beam-off.

[0071] The control computer 32 obtains the beam current detected by the current detector 50. The beam image generator 62 converts the beam current into brightness and generates a beam image based on the deflection amount of the deflector 17. The feature value calculator 63 then calculates feature values ​​from the beam image (step S5).

[0072] For example, the feature quantity calculation unit 63 calculates the feature quantity of the image in the vertical direction (y direction). Figure 4A The brightness of the beam images shown is added to calculate Figure 4B The characteristic amount calculation unit 63 calculates the waveform W1 by adding the brightness of the beam image in the horizontal direction (x direction). Figure 4C The waveform W2 is shown.

[0073] The feature quantity calculation unit 63 then calculates feature quantity A1 for waveform W1 and feature quantity A2 for waveform W2. For example, the variance of the brightness (the sum of the brightness values) is calculated as feature quantities A1 and A2. The closer the beam shape in the beam image is to a perfect circle, the greater the deviation in the brightness of the beam image, and the greater the value of the brightness variance as a feature quantity.

[0074] The scanning of the inspection aperture 40, the creation of the beam image, and the calculation of the characteristic amount are performed for all of the plurality of lens values ​​within a preset range (steps S3 to S6).

[0075] Next, the process returns to step S2 and the astigmatism correction coil value is changed and set to E2. Then, the inspection aperture 40 is scanned, a beam image is created, and characteristic quantities are calculated for all of the plurality of lens values ​​within a preset range (steps S3 to S6).

[0076] Figure 5A This is a graph showing changes in characteristic quantities A1 and A2 when the astigmatism correction coil value is E1, the vertical axis represents characteristic quantities, and the horizontal axis represents lens values. Figure 5B This is a graph showing changes in characteristic quantities A1 and A2 when the astigmatism correction coil value is E2, the vertical axis represents characteristic quantities, and the horizontal axis represents lens values.

[0077] After setting E1 and E2 for the astigmatism correction coil values ​​and calculating the characteristic quantities A1 and A2 for all of the plurality of lens values ​​within the preset range (step S7_Yes), the optimum coil value calculation unit 67 calculates the optimum astigmatism correction coil value using the following method (step S8).

[0078] exist Figure 5A 、 Figure 5B In the graph shown, the lens value at which the characteristic quantity A1 takes an extreme value is inconsistent with the lens value at which the characteristic quantity A2 takes an extreme value. Figure 5A In , the difference between the lens value of the extreme value of feature quantity A1 and the lens value of the extreme value of feature quantity A2 is D1. Figure 5B In FIG, the difference between the lens value at which the characteristic quantity A1 reaches an extreme value and the lens value at which the characteristic quantity A2 reaches an extreme value is D2. The difference in the lens value at the extreme value is caused by the deformation of the beam shape due to astigmatism.

[0079] The closer the astigmatism correction coil value is to the optimal value, the more the roundness of the beam shape improves, and the smaller the difference in the lens value at the extreme value. The optimal coil value calculation unit 67 calculates the optimal coil value based on the difference D1 when the astigmatism correction coil value is set to E1 and the difference D2 when the astigmatism correction coil value is set to E2. Figure 6 As shown, the coil value (optimum astigmatism correction coil value) at which the lens values ​​at the extreme values ​​coincide and the difference is 0 is obtained.

[0080] The drawing control unit 61 sets the calculated optimal astigmatism correction coil value to the astigmatism correction coil 18 , thereby being able to correct multi-beam astigmatism with high accuracy and draw a pattern with high accuracy.

[0081] Thus, according to this embodiment, by inspecting aperture 40 using multi-beam scanning and sequentially switching the electron beams passing through the through-hole, beam images can be generated in a short time. By varying the astigmatism correction coil value of astigmatism correction coil 18 and the lens value of objective lens 16, multiple beam images with different astigmatism correction coil values ​​and focal positions are generated. The brightness of each beam image is summed in the x- and y-directions to generate waveforms W1 and W2. The characteristic quantities A1 and A2 of waveforms W1 and W2 are calculated, and the optimal astigmatism correction coil value is calculated so that the lens value at which characteristic quantity A1 reaches its extreme value coincides with the lens value at which characteristic quantity A2 reaches its extreme value. Consequently, the optimal astigmatism correction coil value can be determined quickly and with high accuracy.

[0082] In the above embodiment, the difference D1 when the astigmatism correction coil value is E1 and the difference D2 when the astigmatism correction coil value is E2 are obtained. However, the coil value set for the astigmatism correction coil 18 may be set to 3 or more.

[0083] In the above embodiment, the variance is used as the feature value of the waveform (brightness sum value), but the difference between the maximum value and the minimum value of the waveform can also be used as the feature value. In addition, the difference between the maximum value and the minimum value of the differential value of the waveform can also be used as the feature value. Figure 7 As shown, the difference between the maximum value and the minimum value may be obtained for each beam pitch period, and the total of the differences may be used as a feature value.

[0084] like Figure 8 As shown, the characteristic quantity calculation unit 63 can use the waveform W1 obtained by adding the brightness in the y direction to weight the brightness of the beam image, and add the weighted brightness in the x direction to calculate the waveform W2'. For example, the characteristic quantity of each lens value calculated based on the unweighted waveform W2 is expressed as Figure 9A In contrast, the characteristic value of each lens value calculated based on the weighted waveform W2′ is expressed as Figure 9B The changes shown emphasize the extreme lens values.

[0085] Similarly, the beam image brightness may be weighted using waveform W2 obtained by adding the brightness in the x direction, and waveform W1 ′ may be calculated by adding the weighted brightness in the y direction, and the feature amount may be calculated based on waveform W1 ′.

[0086] In the above embodiment, the waveform is obtained by adding the brightness of the beam image along the beam array arrangement direction of the x direction (0°) and the y direction (90°), but the addition direction is not limited to this, as long as it is the two directions in which the astigmatism adjustment is performed. For example, Figure 10 As shown, the waveform is calculated by adding the brightness of the beam image in the orthogonal oblique directions (45° and 135°). Astigmatism, an optical phenomenon, occurs in the 90° direction. Therefore, by adding the brightness in the orthogonal directions to calculate the waveform and calculating the characteristic value, these components can be treated as independent components, enabling efficient correction of astigmatism.

[0087] In the above embodiment, a configuration in which astigmatism is corrected using a magnetic field generated by an astigmatism correction coil has been described. However, a lens or an astigmatism correction element that corrects astigmatism using an electric field may also be used.

[0088] In addition, the present invention is not limited to the above-mentioned embodiment itself. During the implementation stage, the constituent elements can be deformed and concretized within the scope of the main purpose. In addition, various inventions can be formed by appropriately combining the multiple constituent elements disclosed in the above-mentioned embodiment. For example, several constituent elements can also be deleted from all the constituent elements shown in the embodiment. Furthermore, the constituent elements in different embodiments can also be appropriately combined.

Claims

1. A multi-charged particle beam delineation device, characterized in that: The apparatus comprises: an objective lens for adjusting the focal position of the multi-beam; an astigmatism correction element for correcting the astigmatism of the multi-beam; and a stage for placing a substrate as a drawing object. an inspection aperture, provided on the stage, for allowing one of the multiple beams to pass through; a current detector for detecting a beam current of each beam of the plurality of beams after passing through the inspection aperture; a deflector for deflecting the multi-beams and scanning the multi-beams on the inspection aperture; a beam image generating unit for generating a beam image based on the detected beam current; a feature quantity calculation unit that adds the brightness of the beam images in a first direction to generate a first waveform and calculates a first feature quantity based on the first waveform, adds the brightness of the beam images in a second direction different from the first direction to generate a second waveform, and calculates a second feature quantity based on the second waveform; And a parameter calculation unit calculates the excitation parameters set for the astigmatism correction element based on the first characteristic quantity and the second characteristic quantity, the first direction is orthogonal to the second direction, the first characteristic quantity and the second characteristic quantity are one of the variance of the brightness in the first waveform and the second waveform, the difference between the maximum and minimum values ​​of the brightness in the first waveform and the second waveform, the difference between the maximum and minimum values ​​of the differential values ​​in the first waveform and the second waveform, and the difference between the maximum and minimum values ​​of the brightness in each beam spacing period in the first waveform and the second waveform, and the parameter calculation unit calculates the excitation parameters in a manner that the lens value at which the first characteristic quantity takes an extreme value is consistent with the lens value at which the second characteristic quantity takes an extreme value.

2. The multi-charged particle beam mapping device according to claim 1, characterized in that The inspection aperture is scanned respectively using a plurality of first excitation parameters of the objective lens and a plurality of second excitation parameters of the astigmatism correction element, the beam image production unit produces a plurality of beam images corresponding to the plurality of first excitation parameters and the plurality of second excitation parameters, the feature quantity calculation unit calculates a plurality of first feature quantities and a plurality of second feature quantities based on the plurality of beam images; the parameter calculation unit calculates the excitation parameters set for the astigmatism correction element based on the plurality of first feature quantities and the plurality of second feature quantities in a manner that makes the first excitation parameter at which the first feature quantity takes an extreme value consistent with the first excitation parameter at which the second feature quantity takes an extreme value.

3. The multi-charged particle beam mapping device according to claim 1, characterized in that The feature quantity calculation unit weights the brightness of the beam image using the first waveform, and adds the weighted brightness of the beam image in the second direction to generate the second waveform.

4. The multi-charged particle beam mapping device according to claim 1, wherein: The first direction and the second direction are beam array arrangement directions of the multi-beams.

5. A method for adjusting a multi-charged particle beam depiction device, wherein an objective lens for adjusting the focal position of the multi-beam is set as a first excitation parameter, the setting of the first excitation parameter is changed, and the following series of processes are performed under a plurality of the first excitation parameters: scanning an inspection aperture with the multi-beam, the inspection aperture being set on a stage and allowing one of the multi-beams to pass through; detecting the beam current of each beam of the multi-beam after passing through the inspection aperture; producing a beam image in the first excitation parameter based on the beam current; summing the brightness of the beam images in a first direction to generate a first waveform, and calculating a first characteristic value based on the first waveform, summing the brightness of the beam images in a second direction different from the first direction to generate a second waveform, and calculating a second characteristic value based on the second waveform; calculating the first excitation parameter at which the first characteristic value takes an extreme value based on the correlation between the first excitation parameter and the first characteristic value, wherein the correlation between the first excitation parameter and the first characteristic value is obtained based on a plurality of the first characteristic values ​​corresponding to a plurality of the first excitation parameters; The first excitation parameter is correlated with the second characteristic quantity, and the first excitation parameter at which the second characteristic quantity takes an extreme value is calculated. The correlation between the first excitation parameter and the second characteristic quantity is obtained based on a plurality of the second characteristic quantities corresponding to the plurality of the first excitation parameters. The second excitation parameter is calculated in such a manner that the first excitation parameter at which the first characteristic quantity takes an extreme value is consistent with the first excitation parameter at which the second characteristic quantity takes an extreme value. The second excitation parameter is an excitation parameter set for an aberration correction element for correcting the aberration of the multi-beams. The first direction is orthogonal to the second direction. The first characteristic quantity and the second characteristic quantity are one of the sum of the variance of the brightness in the first waveform and the second waveform, the difference between the maximum and minimum values ​​of the brightness in the first waveform and the second waveform, the difference between the maximum and minimum values ​​of the differential values ​​in the first waveform and the second waveform, and the difference between the maximum and minimum values ​​of the brightness in each beam spacing period in the first waveform and the second waveform. The excitation parameter is calculated in such a manner that the lens value at which the first characteristic quantity takes an extreme value is consistent with the lens value at which the second characteristic quantity takes an extreme value.

6. The method for adjusting a multi-charged particle beam mapping device according to claim 5, wherein: The second waveform is generated by weighting the brightness of the beam image using the first waveform and adding the weighted brightness of the beam image in the second direction.

7. The method for adjusting a multi-charged particle beam mapping device according to claim 5, wherein: The first direction and the second direction are beam array arrangement directions of the multi-beams.

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