A highly integrated microstrip line and rectangular waveguide conversion structure

Abstract

The present invention provides a highly integrated conversion structure of a microstrip line and a rectangular waveguide, the structure comprising: a first metal component, an upper waveguide channel at the bottom of the first metal component, and periodic electromagnetic band gaps are arranged on both sides of the upper waveguide channel; a dielectric substrate is arranged at the bottom of the first metal component, a feeder and a first impedance transformation line are arranged on the dielectric substrate, a second impedance transformation line is arranged below the dielectric substrate, the first impedance transformation line is connected to the first butterfly patch through a first triangular patch, and the first side of the second impedance transformation line is connected to the second butterfly patch through a second triangular patch; a second metal component is arranged at the bottom of the dielectric substrate, a groove is arranged on the top of the second metal component, a lower waveguide channel is arranged on the first side of the groove, and the lower waveguide channel is embedded in the groove to set a distance to form a short-circuit surface. The present invention can be directly integrated with a large-sized, complex-function monolithic microwave integrated circuit, and can realize broadband, low-loss conversion from a microstrip line to a rectangular waveguide.

Description

Technical Field

[0001] The invention relates to the field of electromagnetic field and microwave technology, and in particular to a highly integrated conversion structure of a microstrip line and a rectangular waveguide. Background Art

[0002] When constructing systems in the millimeter wave and terahertz frequency bands, it is usually necessary to combine a monolithic microwave integrated circuit with a metal waveguide. The combination of a monolithic microwave integrated circuit and a metal waveguide requires the design of the conversion between the TEM mode of the transmission circuit and the TE10 mode of the metal waveguide at the transmission level. The prior art realizes the combination of a monolithic microwave integrated circuit and a metal waveguide by E-plane conversion of a microstrip line and a metal waveguide. On the one hand, the prior art realizes the E-plane conversion by a probe, but some E-plane probe conversion technologies require that the dielectric substrate of the conversion structure should not be too large, which makes it difficult to integrate a large-sized monolithic microwave integrated circuit on the dielectric substrate of the conversion structure. In other probe conversion technologies, the probe can only be set at the edge of the dielectric substrate, and the input and output ends cannot be combined in the same direction for conversion. On the other hand, the prior art realizes the E-plane conversion by designing an additional waveguide or circuit structure, but it still requires that the dielectric substrate of the conversion structure should not be too large, which also causes the large-sized monolithic microwave integrated circuit to be unable to be directly integrated on the dielectric substrate of the conversion structure. Summary of the invention

[0003] In view of this, an embodiment of the present invention provides a highly integrated microstrip line and rectangular waveguide conversion structure to solve the problems in the prior art that the dielectric substrate cannot be too large and the electromagnetic wave input end and the electromagnetic wave output end cannot be in the same direction.

[0004] One aspect of the present invention provides a highly integrated microstrip line and rectangular waveguide conversion structure, comprising:

[0005] A first metal component, wherein a waveguide upper channel penetrating both ends is provided in a first direction at the bottom of the first metal component, and periodic electromagnetic band gaps are provided on both sides of the waveguide upper channel along a second direction, and the first direction is perpendicular to the second direction;

[0006] A dielectric substrate is arranged at the bottom of the first metal component, a feeder line and a first impedance transformation line connected in sequence are arranged at a position corresponding to the upper channel of the waveguide on the dielectric substrate; a second impedance transformation line is arranged at a position corresponding to the first impedance transformation line on the lower side of the dielectric substrate; a first side of the first impedance transformation line away from the feeder line is connected to a first butterfly patch through a first triangular patch; a first side of the second impedance transformation line is connected to a second butterfly patch through a second triangular patch, the first triangular patch and the second triangular patch are symmetrically arranged along the first direction; the first butterfly patch and the second butterfly patch are symmetrically arranged along the first direction; the first butterfly patch and the second butterfly patch form a butterfly antenna; wherein the first impedance transformation line, the second impedance transformation line, the first triangular patch, the second triangular patch and the butterfly antenna are all located within the action range of the periodic electromagnetic band gap;

[0007] A second metal component is arranged at the bottom of the dielectric substrate, a groove is provided on the top of the second metal component and matches with the dielectric substrate, a waveguide lower channel is provided on a first side of the groove, and the waveguide lower channel matches with the waveguide upper channel; the waveguide lower channel is embedded in the groove at a set distance to form a short-circuit surface to prevent electromagnetic waves from propagating in the opposite direction.

[0008] In some embodiments, the feed line, the first impedance transformation line, the second impedance transformation line, the first triangular patch, the second triangular patch, the first butterfly patch, and the second butterfly patch are all made of gold.

[0009] In some embodiments, the dielectric substrate is made of quartz.

[0010] In some embodiments, the dielectric substrate has a thickness of 50±10 μm.

[0011] In some embodiments, the lengths of the first impedance transformation line and the second impedance transformation line are both 0.31 mm, and the distance from the first side of the first impedance transformation line to the end of the dielectric substrate and the distance from the first side of the second impedance transformation line to the end of the dielectric substrate are both 0.45 mm, wherein the end of the dielectric substrate is an end close to the lower channel of the waveguide.

[0012] In some embodiments, the opening angles of the first butterfly patch and the second butterfly patch are both 28±10°.

[0013] In some embodiments, the periodic electromagnetic band gap is composed of a plurality of identical periodic electromagnetic band gap units, and each periodic electromagnetic band gap unit is composed of a metal column, a unit dielectric substrate, a metal ground, and an air gap.

[0014] In some embodiments, a plurality of identical periodic electromagnetic band gap units are sequentially arranged at a set period to form a periodic electromagnetic band gap.

[0015] In some embodiments, gold is used as a grounding body for metal grounding under the dielectric substrate.

[0016] In some embodiments, the length and width of the metal column are both 0.3 mm, the height is 0.35 mm, the distance from the bottom surface of the metal column to the top of the dielectric substrate is 0.02 mm, and the period of the periodic electromagnetic band gap unit is 0.6 mm.

[0017] The beneficial effects of the present invention are at least:

[0018] The highly integrated conversion structure of microstrip line and rectangular waveguide of the present invention transmits electromagnetic waves to the first impedance transformation line and the second impedance transformation line through a feeder line. The first impedance transformation line and the second impedance transformation line are impedance matched with the butterfly antenna and then the electromagnetic waves are transmitted to the butterfly antenna. The butterfly antenna radiates the electromagnetic waves into the rectangular waveguide. The butterfly antenna is used to convert the electromagnetic waves, thereby realizing broadband and low-loss electromagnetic wave conversion.

[0019] Furthermore, by using a periodic electromagnetic band gap to limit electromagnetic waves, there is no need to limit the electromagnetic waves by limiting the size of the metal cavity, so that the dielectric substrate can be of any size, so that the highly integrated microstrip line and rectangular waveguide conversion structure of the present invention can be directly integrated with a large-size, complex-function monolithic microwave integrated circuit.

[0020] Furthermore, the electromagnetic wave input end and the electromagnetic wave output end of the highly integrated microstrip line and rectangular waveguide conversion structure of the present invention are in the same direction, and there is no need to add an additional waveguide structure to change the direction of the electric field. The structure is compact and suitable for application scenarios where the electromagnetic wave input end and output end are in the same direction.

[0021] Additional advantages, purposes, and features of the present invention will be described in part in the following description, and will become apparent to those skilled in the art after studying the following, or may be learned from the practice of the present invention. The purposes and other advantages of the present invention may be realized and obtained by the structures specifically pointed out in the specification and the accompanying drawings.

[0022] Those skilled in the art will appreciate that the objectives and advantages that can be achieved with the present invention are not limited to the above specific description, and the above and other objectives that can be achieved by the present invention will be more clearly understood from the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The drawings described herein are used to provide a further understanding of the present invention, constitute a part of this application, and do not constitute a limitation of the present invention. The components in the drawings are not drawn to scale, but are only for illustrating the principles of the present invention. In order to facilitate the illustration and description of some parts of the present invention, the corresponding parts in the drawings may be enlarged, that is, they may become larger relative to other components in the exemplary device actually manufactured according to the present invention. In the drawings:

[0024] Figure 1 It is a schematic structural diagram of a highly integrated microstrip line and rectangular waveguide conversion structure according to an embodiment of the present invention.

[0025] Figure 2 It is a schematic structural diagram of a dielectric layer according to an embodiment of the present invention.

[0026] Figure 3 The figure is a schematic structural diagram and a dispersion curve of a periodic electromagnetic bandgap unit according to an embodiment of the present invention.

[0027] Figure 4 This is an S parameter diagram of a highly integrated microstrip line and rectangular waveguide conversion structure according to an embodiment of the present invention.

[0028] Figure 5 The S-parameter diagram of the conversion structure of a highly integrated microstrip line and a rectangular waveguide at different butterfly patch angles according to an embodiment of the present invention.

[0029] Figure 6 1 is an S parameter diagram of a highly integrated microstrip line and rectangular waveguide conversion structure at different l2 lengths according to an embodiment of the present invention.

[0030] Figure 7 The figure is a conversion structure of a back-to-back highly integrated microstrip line and a rectangular waveguide and its S parameter diagram according to an embodiment of the present invention. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the embodiments and the accompanying drawings. Here, the illustrative embodiments of the present invention and their descriptions are used to explain the present invention, but are not intended to limit the present invention.

[0032] It should also be noted that, in order to avoid obscuring the present invention due to unnecessary details, only structures and / or processing steps closely related to the solutions according to the present invention are shown in the accompanying drawings, while other details that are not closely related to the present invention are omitted.

[0033] It should be emphasized that the term “include / comprises” when used herein refers to the presence of features, elements, steps or components, but does not exclude the presence or addition of one or more other features, elements, steps or components.

[0034] It should also be noted that, unless otherwise specified, the term “connection” herein may refer not only to a direct connection but also to an indirect connection involving an intermediate.

[0035] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the accompanying drawings, the same reference numerals represent the same or similar components, or the same or similar steps.

[0036] Microstrip lines are an important transmission line in millimeter-wave and terahertz integrated circuits. Monolithic microwave integrated circuits (MMICs) can use microstrip lines as transmission lines. Monolithic microwave integrated circuits have the advantages of planarity and high integration, and are widely used in millimeter-wave and terahertz frequency bands. However, at present, the interfaces between millimeter-wave and terahertz test systems and many instruments, as well as the connections between various millimeter-wave and terahertz integrated systems mostly use waveguides with lower losses. Therefore, building systems in the millimeter-wave and terahertz frequency bands usually requires the combination of monolithic microwave integrated circuits and metal waveguides, that is, at the transmission line level, it is necessary to design a conversion structure between the TEM mode of the circuit and the TE10 mode of the metal waveguide.

[0037] The prior art uses an E-face probe to achieve the conversion between a microstrip line and a rectangular waveguide. In this method, the front pattern of the medium is a rectangular or fan-shaped metal radiation patch, and the back pattern of the medium is an incomplete metal ground. The probe is placed in a narrow metal cavity and partially extends into the waveguide. In this type of probe, the dielectric substrate is strictly confined to a narrow metal cavity, and its lateral width is very small. Therefore, large-sized, complex-function monolithic microwave integrated circuits are difficult to integrate on such a dielectric substrate. If an external probe is used, the probe needs to be connected to the monolithic microwave integrated circuit by gold wire bonding, which will introduce additional uncertainties and affect the conversion efficiency. In response to this, the prior art proposes a method of encapsulating the probe using an electromagnetic band gap, which achieves broadband conversion while reducing the E-face probe's requirements for the width of the dielectric substrate. However, in this conversion method, the probe can only be placed near the right-angle edge of the dielectric substrate, which has certain limitations.

[0038] In the above conversion method, the input port and the output port of the conversion structure are perpendicular to each other. If the input port and the output port are required to be in the same direction in practical applications, an additional waveguide structure is required to change the direction of the electric field. For applications where the input port and the output port are in the same direction, the prior art, on the one hand, uses a highly variable U-shaped waveguide bend to change the direction of the electric field by 90°, thereby achieving a more compact broadband conversion. On the other hand, a fan-shaped patch rotated 90° is used to change the direction of the electric field, and the impedance matching characteristics are improved by optimizing the shape of the ground metal pattern, thereby also achieving the same-direction conversion of the input port and the output port. However, these conversion structures still require that the width of the dielectric substrate should not be too large, and similarly, these conversion structures are not convenient for direct integration with large-size monolithic microwave integrated circuits. Therefore, the present invention provides a highly integrated conversion structure of a microstrip line and a rectangular waveguide, which solves the problem in the prior art that the dielectric substrate of the conversion structure of a microstrip line and a rectangular waveguide cannot be too large and the electromagnetic wave input end and the electromagnetic wave output end cannot be in the same direction.

[0039] One aspect of the present invention provides a highly integrated microstrip line and rectangular waveguide conversion structure, such as Figure 1 As shown, including:

[0040] A first metal component, a waveguide upper channel penetrating both ends is provided on the first direction of the bottom of the first metal component, and periodic electromagnetic band gaps are provided on both sides of the waveguide upper channel along the second direction, and the first direction is perpendicular to the second direction.

[0041] Among them, the first direction is the Y-axis direction, and the second direction is the X-axis direction, that is, a waveguide upper channel is provided at the bottom of the first metal component along the Y-axis direction, and periodic electromagnetic band gaps are symmetrically provided on both sides of the waveguide upper channel along the X-axis direction. The periodic electromagnetic band gap is composed of a plurality of identical periodic electromagnetic band gap units, and each periodic electromagnetic band gap unit is composed of a metal column, a unit dielectric substrate, a metal ground and an air gap. A plurality of identical periodic electromagnetic band gap units are arranged in sequence according to a set period to form an ideal magnetic conductor boundary. The unit dielectric substrate is a part of the dielectric substrate, and its length and width are equal to the period of the periodic electromagnetic band gap unit, and its thickness is equal to the thickness of the dielectric substrate. The periodic electromagnetic band gap constitutes an ideal magnetic conductor boundary, which prevents electromagnetic waves from propagating in the X-axis direction, and strictly limits the electromagnetic waves to the internal area of ​​the periodic electromagnetic band gap without leakage wave phenomenon, so a narrower metal cavity is no longer needed to limit the electromagnetic waves. Figure 1 In the diagram, the distance along the X-axis is called the width, the distance along the Y-axis is called the length, and the distance along the Z-axis is called the height.

[0042] In some embodiments, Figure 3As shown, the length a and width a of the metal column are both 0.3 mm, the height d is 0.35 mm, the distance g from the bottom surface of the metal column to the top of the dielectric substrate is 0.02 mm, and the period p of the periodic electromagnetic bandgap unit is 0.6 mm. It can be seen from the dispersion curve of the periodic electromagnetic bandgap unit that the stop band of the periodic electromagnetic bandgap unit at this size is 84-242 GHz, which can cover the operating frequency band of the WR-6.5 waveguide, that is, it can cover the frequency band of 110-170 GHz, where Beta represents the phase constant.

[0043] The dielectric substrate is arranged at the bottom of the first metal component. A feeder line and a first impedance transformation line connected in sequence are arranged at a position on the dielectric substrate corresponding to the upper channel of the waveguide; a second impedance transformation line is arranged at a position on the lower side of the dielectric substrate corresponding to the first impedance transformation line; the first side of the first impedance transformation line away from the feeder line is connected to the first butterfly patch through the first triangular patch; the first side of the second impedance transformation line is connected to the second butterfly patch through the second triangular patch, and the first triangular patch and the second triangular patch are symmetrically arranged along the first direction; the first butterfly patch and the second butterfly patch are symmetrically arranged along the first direction; the first butterfly patch and the second butterfly patch form a butterfly antenna; wherein the first impedance transformation line, the second impedance transformation line, the first triangular patch, the second triangular patch and the butterfly antenna are all located within the range of action of the periodic electromagnetic band gap. The upper channel of the waveguide and the lower channel of the waveguide constitute a rectangular waveguide channel. The transmission line on the upper side of the dielectric substrate constitutes a front pattern, and the transmission line on the lower side constitutes a back pattern, and the heights of the front pattern and the back pattern are both 4μm. Figure 2 As shown, the dielectric substrate, the front pattern of the dielectric substrate and the back pattern of the dielectric substrate constitute a dielectric layer. Among them, the feed line, the first impedance transformation line, the second impedance transformation line, the first triangular patch, the second triangular patch, the first butterfly patch and the second butterfly patch are all made of gold and have good conductivity.

[0044] In some embodiments, gold is provided under the dielectric substrate as a grounding body for metal grounding, thereby avoiding the risk of electric shock when converting the microstrip line and the rectangular waveguide and improving the safety during the conversion.

[0045] In some embodiments, the rectangular waveguide channel has a width of 0.826 mm and a height of 1.651 mm, which is a standard WR-6.5 waveguide.

[0046] In some embodiments, the opening angles of the first butterfly patch and the second butterfly patch are both 28±10°. Figure 5As shown in the figure, in the target frequency band (110-170GHz) of the standard WR-6.5 waveguide, other quantities remain unchanged, and only the opening angle of the first butterfly patch and the second butterfly patch is changed. When the opening angle α of the first butterfly patch and the second butterfly patch is 20°, the loss at low frequency is large, and when α is 36°, the overall loss in the target frequency band is large. When α is 28°, the impedance matching in the target frequency band is the best and the loss is the lowest, so the opening angle of the first butterfly patch and the second butterfly patch is set to 28°.

[0047] In some embodiments, the length l1 of the first impedance transformation line and the second impedance transformation line are both 0.31 mm, and the distance from the first side of the first impedance transformation line to the end of the dielectric substrate and the distance from the first side of the second impedance transformation line to the end of the dielectric substrate are both 0.45 mm, wherein the end of the dielectric substrate is the end close to the lower channel of the waveguide. In a certain range, the longer the length l1, the lower the working frequency band of the conversion structure, and the shorter the length l1, the higher the working frequency band of the conversion structure. Figure 6 As shown, when the distance from the first side of the first impedance transformation line to the end of the dielectric substrate and the distance l2 from the first side of the second impedance transformation line to the end of the dielectric substrate are 0.45mm, S11 (input reflection coefficient) in the target frequency band is <-20dB, the impedance matching is best, and the insertion loss is lowest, so l2 is designed to be 0.45mm.

[0048] In some embodiments, the dielectric substrate is made of quartz, and gold is used as a grounding body of the metal ground under the dielectric substrate. The thickness of the dielectric substrate is 50±10 μm. Quartz has low loss in the millimeter wave frequency band and is suitable as a dielectric material of the conversion structure.

[0049] In other embodiments, the dielectric substrate has a dielectric constant of 4.4, a loss tangent of 0.000015, and a thickness of 50 μm.

[0050] The second metal component is arranged at the bottom of the dielectric substrate, and a groove is arranged on the top of the second metal component to match the dielectric substrate. A waveguide lower channel is arranged on the first side of the groove, and the waveguide lower channel matches the waveguide upper channel. The waveguide lower channel is embedded in the groove to set a distance to form a short-circuit surface to prevent the electromagnetic wave from propagating in the reverse direction. The short-circuit surface will reflect the electromagnetic wave energy radiated in the negative axis direction of the y-axis to the positive axis direction of the y-axis to prevent the electromagnetic wave from propagating in the reverse direction. The groove is used to place the dielectric substrate.

[0051] Among them, port 1 is provided with a microstrip line, port 2 is provided with a rectangular waveguide, the feeder transmits the electromagnetic wave in the microstrip line to the first impedance transformation line and the second impedance transformation line, the first impedance transformation line and the second impedance transformation line match the impedance of the microstrip line with the impedance of the butterfly antenna and then transmit the electromagnetic wave to the butterfly antenna, the butterfly antenna transmits the electromagnetic wave to the rectangular waveguide, thereby realizing the conversion of the TEM mode of the microstrip line to the TE10 mode of the rectangular waveguide. The microstrip line transmits electromagnetic waves in the TEM mode, and the rectangular waveguide transmits electromagnetic waves in the TE10 mode. There are no electric field and magnetic field components in the transmission direction of the electromagnetic wave in the TEM mode, and the magnetic field direction of the electromagnetic wave in the TE10 mode is parallel to the transmission direction. Similarly, the conversion from the rectangular waveguide to the microstrip line is that the rectangular waveguide of port 2 transmits the electromagnetic wave to the butterfly antenna, the first impedance transformation line and the second impedance transformation line perform impedance matching and then transmit the electromagnetic wave energy to the feeder, and the feeder transmits the electromagnetic wave to the microstrip line, thus realizing the conversion between the rectangular waveguide and the microstrip line. Furthermore, the butterfly antenna has the characteristics of broadband impedance matching, thereby realizing broadband and low-loss conversion between microstrip line and rectangular waveguide.

[0052] Furthermore, the S parameters of the conversion structure of the highly integrated microstrip line and rectangular waveguide of the present invention are as follows: Figure 4 As shown, the designed feed line length is 5mm, the frequency band of S11 (input reflection coefficient) <-15dB is 101-180GHz, the relative bandwidth is 56.2%, and the loss within the band is 0.61-1.11dB, achieving broadband and low-loss conversion. Therefore, the conversion structure of the microstrip line and the rectangular waveguide of the present invention has a better electromagnetic wave conversion effect.

[0053] The following is an explanation in conjunction with specific embodiments.

[0054] Combining two identical highly integrated microstrip lines with a rectangular waveguide transition structure, such as Figure 7As shown, the microstrip line ports of the two conversion structures are connected, and port 1 and port 2 are both rectangular waveguide channels, connecting the rectangular waveguides. Among them, in the conversion structure between each microstrip line and rectangular waveguide, the feed line length is 5mm, the width of the rectangular waveguide channel is 0.826mm, the height is 1.651mm, the opening angle of the first butterfly patch and the second butterfly patch is 28°, the length of the first impedance transformation line and the second impedance transformation line are both 0.31mm, the distance from the first side of the first impedance transformation line to the end of the dielectric substrate and the distance from the first side of the second impedance transformation line to the end of the dielectric substrate are both 0.45mm, the material of the dielectric substrate is quartz, the dielectric constant is 4.4, the loss tangent is 0.000015, the thickness is 50μm, the length and width of the metal column of the periodic electromagnetic bandgap unit are both 0.3mm, the height is 0.35mm, the distance from the bottom surface of the metal column to the top of the dielectric substrate is 0.02mm, and the period of the periodic electromagnetic bandgap unit is 0.6mm. The electromagnetic wave input from the rectangular waveguide of port 1 is output to the microstrip line through the first highly integrated microstrip line and rectangular waveguide conversion structure, and then output to the rectangular waveguide of port 2 through the second highly integrated microstrip line and rectangular waveguide conversion structure. Figure 7 It can be seen that in the frequency band of 110-170GHz, S11 (input reflection coefficient) is <-17dB, S21 (transmission coefficient) is >-1.48dB, the impedance matching is good, and the electromagnetic wave transmission loss is low. Therefore, the conversion structure of the highly integrated microstrip line and rectangular waveguide of the present invention has a good electromagnetic wave conversion effect.

[0055] In summary, the highly integrated conversion structure of microstrip line and rectangular waveguide described in the present invention transmits electromagnetic waves to the first impedance transformation line and the second impedance transformation line through the feeder line. The first impedance transformation line and the second impedance transformation line are impedance matched with the butterfly antenna and then the electromagnetic waves are transmitted to the butterfly antenna. The butterfly antenna radiates the electromagnetic waves into the rectangular waveguide. The butterfly antenna is used to convert the electromagnetic waves, thereby realizing broadband and low-loss electromagnetic wave conversion.

[0056] Furthermore, by using a periodic electromagnetic band gap to limit electromagnetic waves, there is no need to limit the electromagnetic waves by limiting the size of the metal cavity, so that the dielectric substrate can be of any size, so that the highly integrated microstrip line and rectangular waveguide conversion structure of the present invention can be directly integrated with a large-size, complex-function monolithic microwave integrated circuit.

[0057] Furthermore, the electromagnetic wave input end and the electromagnetic wave output end of the highly integrated microstrip line and rectangular waveguide conversion structure of the present invention are in the same direction, and there is no need to add an additional waveguide structure to change the direction of the electric field. The structure is compact and suitable for application scenarios where the electromagnetic wave input end and output end are in the same direction.

[0058] It should be understood by those skilled in the art that the exemplary components, systems and methods described in conjunction with the embodiments disclosed herein can be implemented in hardware, software or a combination of the two. Whether it is performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention. When implemented in hardware, it can be, for example, an electronic circuit, an application specific integrated circuit (ASIC), appropriate firmware, a plug-in, a function card, etc. When implemented in software, the elements of the present invention are programs or code segments used to perform the required tasks. The program or code segment can be stored in a machine-readable medium, or transmitted on a transmission medium or a communication link via a data signal carried in a carrier.

[0059] It should be clear that the present invention is not limited to the specific configuration and processing described above and shown in the figures. For the sake of simplicity, a detailed description of the known method is omitted here. In the above embodiments, several specific steps are described and shown as examples. However, the method process of the present invention is not limited to the specific steps described and shown, and those skilled in the art can make various changes, modifications and additions, or change the order between the steps after understanding the spirit of the present invention.

[0060] In the present invention, features described and / or illustrated for one embodiment may be used in the same or similar manner in one or more other embodiments, and / or combined with features of other embodiments or replace features of other embodiments.

[0061] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the embodiments of the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A highly integrated microstrip line and rectangular waveguide conversion structure, characterized in that: The structure includes: A first metal component, wherein a waveguide upper channel penetrating both ends is provided in a first direction at the bottom of the first metal component, and periodic electromagnetic band gaps are provided on both sides of the waveguide upper channel along a second direction, and the first direction is perpendicular to the second direction; A dielectric substrate is arranged at the bottom of the first metal component, a feeder line and a first impedance transformation line connected in sequence are arranged at a position corresponding to the upper channel of the waveguide on the dielectric substrate; a second impedance transformation line is arranged at a position corresponding to the first impedance transformation line on the lower side of the dielectric substrate; the first impedance transformation line is connected to a first butterfly patch through a first triangular patch on a first side away from the feeder, and the first triangular patch is perpendicular to the first impedance transformation line; the first side of the second impedance transformation line is connected to a second butterfly patch through a second triangular patch, and the second triangular patch is perpendicular to the second impedance transformation line, and the first triangular patch and the second triangular patch are symmetrically arranged along the first direction; the first butterfly patch and the second butterfly patch are symmetrically arranged along the first direction; the first butterfly patch and the second butterfly patch form a butterfly antenna; wherein the first impedance transformation line, the second impedance transformation line, the first triangular patch, the second triangular patch and the butterfly antenna are all located within the action range of the periodic electromagnetic band gap; A second metal component is arranged at the bottom of the dielectric substrate, a groove is provided on the top of the second metal component and matches with the dielectric substrate, a waveguide lower channel is provided on a first side of the groove, and the waveguide lower channel matches with the waveguide upper channel; the waveguide lower channel is embedded in the groove at a set distance to form a short-circuit surface to prevent electromagnetic waves from propagating in the opposite direction.

2. The highly integrated microstrip line and rectangular waveguide conversion structure according to claim 1, characterized in that: The feed line, the first impedance transformation line, the second impedance transformation line, the first triangular patch, the second triangular patch, the first butterfly patch and the second butterfly patch are all made of gold.

3. The highly integrated microstrip line and rectangular waveguide conversion structure according to claim 1, characterized in that: The dielectric substrate is made of quartz.

4. The highly integrated microstrip line and rectangular waveguide conversion structure according to claim 3, characterized in that: The thickness of the dielectric substrate is 50±10 μm.

5. The highly integrated microstrip line and rectangular waveguide conversion structure according to claim 1, characterized in that: The lengths of the first impedance transformation line and the second impedance transformation line are both 0.31 mm, and the distance from the first side of the first impedance transformation line to the end of the dielectric substrate and the distance from the first side of the second impedance transformation line to the end of the dielectric substrate are both 0.45 mm, wherein the end of the dielectric substrate is an end close to the lower channel of the waveguide.

6. The highly integrated microstrip line and rectangular waveguide conversion structure according to claim 5, characterized in that: The opening angles of the first butterfly-shaped patch and the second butterfly-shaped patch are both 28±10°.

7. The highly integrated microstrip line and rectangular waveguide conversion structure according to claim 1, characterized in that: The periodic electromagnetic band gap is composed of a plurality of identical periodic electromagnetic band gap units, and each periodic electromagnetic band gap unit is composed of a metal column, a unit dielectric substrate, a metal ground and an air gap.

8. The highly integrated microstrip line and rectangular waveguide conversion structure according to claim 7, characterized in that: A plurality of identical periodic electromagnetic band gap units are arranged in sequence according to a set period to form a periodic electromagnetic band gap.

9. The highly integrated microstrip line and rectangular waveguide conversion structure according to claim 4, characterized in that: Gold is used as a grounding body for metal grounding under the dielectric substrate.

10. The highly integrated microstrip line and rectangular waveguide conversion structure according to claim 8, characterized in that: The length and width of the metal column are both 0.3 mm, the height is 0.35 mm, the distance from the bottom surface of the metal column to the top of the dielectric substrate is 0.02 mm, and the period of the periodic electromagnetic band gap unit is 0.6 mm.

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