Semiconductor whispering gallery microcavity bistable laser

Abstract

The application provides a semiconductor whispering gallery microcavity bistable laser, and belongs to the technical field of optical fiber communication and semiconductor lasers, and comprises an N electrode, an N-type substrate located on the N electrode, a whispering gallery microcavity located on the N-type substrate and comprising a polygonal cavity and a straight waveguide structure, and the laser whispering gallery microcavity is a three-layer stacked structure, and from bottom to top, the three-layer stacked structure is an N-type confinement layer, an active layer and a P-type confinement layer in sequence; a P electrode is located on the P-type confinement layer; and a vertical polygonal through hole is arranged in the middle of the whispering gallery microcavity. The semiconductor whispering gallery microcavity bistable laser provided by the application can significantly improve the quality factor (Q value) of the mode in the resonant cavity, realize low-threshold lasing, realize bistable stable output, has the advantages of controllable mode, small volume, simple process, high yield, low cost and the like, and has important application value in the field of optical communication and the like.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the field of optical fiber communication and semiconductor laser technology, in particular to a semiconductor whispering gallery microcavity bistable laser. BACKGROUND

[0002] With the increasing demand for information, all-optical communication technology has become the main force in the communication network due to its fast speed, high capacity and low power consumption. As the basic unit of the entire all-optical communication network, optical flip-flop and memory based on optical bistability principle have very important application value in the fields of all-optical signal regeneration, memory caching, optical image processing and high-speed optical communication.

[0003] Optical bistability refers to having two stable output states under an input state, and the output has a similar "hysteresis loop" response relationship with the input. The output states that can be used by the currently proposed bistable devices mainly include lasing wavelength, output power and laser polarization. Semiconductor laser-based bistable devices have the advantages of small size, low power consumption, high speed and easy planar integration, and have developed rapidly in the field of all-optical signal processing in recent years.

[0004] The existing semiconductor bistable laser has a coupled micro-disk laser, a micro-ring laser using clockwise and counterclockwise mode competition, and a triangular microcavity laser using symmetric and antisymmetric mode competition, etc. Its structure needs multiple resonant cavities, needs to prepare an epitaxial ring grating structure, or needs multiple waveguide structures, and the required preparation process tolerance is small, and the stability needs to be improved. The controllable range of the existing semiconductor bistable laser is limited due to the structure and preparation process. In addition, the micro-ring laser adopts a waveguide and a circular resonant cavity tangent coupling input and output mode, the coupling distance is short, and the coupling ratio is very low, which affects the input and output power of the device. The semiconductor whispering gallery microcavity has the advantages of high quality factor and small mode volume, and the semiconductor bistable laser based on the whispering gallery microcavity has the advantages of simple preparation, low cost and easy to realize high-density planar integration, which is very suitable for the development needs of the current optical integration and optical interconnection. SUMMARY

[0005] (1) Technical problems to be solved

[0006] The existing semiconductor bistable laser at least has some of the following problems: insufficient output power, insufficient controllable range, insufficient stability, and complex preparation process.

[0007] (2) Technical solutions

[0008] In order to at least solve some of the above technical problems, the present disclosure provides a semiconductor whispering gallery microcavity bistable laser, comprising:

[0009] N-face electrode (1);

[0010] N-type substrate (2) on the N-face electrode (1);

[0011] Echo-wall micro-cavity (3) on the N-type substrate (2), the top of the echo-wall micro-cavity (3) is provided with a P-face electrode window (4), a vertical polygonal through-hole (5) is opened in the middle of the echo-wall micro-cavity (3), the echo-wall micro-cavity (3) is used for generating two groups of reflection modes, the two groups of reflection modes have coupling, the polygonal through-hole (5) is used for removing the coupling to form a first reflection mode and a second reflection mode, the P-face electrode window (4) is used for non-uniform injection of current, so that the non-injection area outside the field distribution of the first reflection mode stores carriers, and the lasing threshold of the first reflection mode and the lasing threshold of the second reflection mode are different.

[0012] Optionally, the cross-sectional shape of the polygonal through-hole (5) is square.

[0013] Further, the top angle of the projection of the polygonal through-hole (5) on the N-type substrate (2) is opposite to the top angle of the projection of the field distribution of one of the two groups of reflection modes on the N-type substrate (2), and the mode fields of the two groups of reflection modes are different.

[0014] Further, the aperture size of the polygonal through-hole (5) is used to adjust the value difference between the quality factors of the first reflection mode and the second reflection mode.

[0015] Optionally, the cross-sectional shape of the P-face electrode window (4) is square ring.

[0016] Further, the projection of the P-face electrode window (4) on the N-type substrate (2) overlaps with the projection of the field distribution of the first reflection mode on the N-type substrate (2), and the lateral diffusion of the carriers in the echo-wall micro-cavity (3) is limited.

[0017] Optionally, the cross-sectional shape of the echo-wall micro-cavity (3) is an octagon with equal side lengths.

[0018] Further, the sides of the octagon are arc sides, the deformation degrees of each arc side are consistent, and the arc sides are used to improve the values of the quality factors of the two groups of reflection modes.

[0019] Further, the number of top angles of the cross-section of the P-face electrode window (4) is the same as the number of top angles of the cross-section of the polygonal through-hole (5), and the top angles of the cross-section of the P-face electrode window (4) are opposite to the top angles of the cross-section of the polygonal through-hole (5).

[0020] Further, the vertical central axis positions of the whispering gallery microcavity (3), the P-face electrode window (4) and the polygonal through hole (5) are the same.

[0021] Optionally, the whispering gallery microcavity (3) comprises:

[0022] An N-type confinement layer (301) is located on the N-type substrate, and is used for reducing the radiation loss of light in the vertical direction.

[0023] An active layer (302) is located on the N-type confinement layer (301), and is used for generating light.

[0024] A P-type confinement layer (303) is located on the active layer (302), and is used for cooperating with the N-type confinement layer (301) to increase the confinement ability to the light field.

[0025] Optionally, the semiconductor whispering gallery microcavity bistable laser further comprises a waveguide structure (6) directly connected to one of the top corners of the whispering gallery microcavity (3), and is used for directional emission of laser.

[0026] Optionally, the semiconductor whispering gallery microcavity bistable laser further comprises a cleaved surface (7) arranged at the other end of the waveguide structure (6) opposite to the whispering gallery microcavity (3), and is used for determining the light emission position.

[0027] (Three) beneficial effects

[0028] (1) The existence of the P-face electrode window and the polygonal through hole forces the two groups of coupled reflection modes in the whispering gallery microcavity to no longer be coupled, forming two independent reflection modes, and then realizing bistable output through non-uniform injection of current, and through adjusting the size of the P-face electrode and the polygonal through hole, the bistable output range can be controlled.

[0029] (2) The semiconductor whispering gallery microcavity bistable laser resonant cavity is a polygonal structure, and a mode family formed by multiple reflection modes can exist in the cavity, and through regionally selective injection of current, the lasing conditions of multiple reflection modes in the cavity can be controlled.

[0030] (3) The whispering gallery microcavity can make the mode field distribution more localized near the center of the cavity by introducing arc edges instead of straight edges, thereby improving the quality factor (Q value) of the mode, which is conducive to realizing low threshold lasing.

[0031] (4) The introduction of the inner hole structure in the center of the whispering gallery microcavity can effectively reduce the restriction ability of the resonant cavity to light, thereby increasing the coupling output light ability of the waveguide and improving the output power of the laser.

[0032] (5) The semiconductor whispering gallery microcavity bistable laser provided by the application can be prepared only by simple planar technology, without additional electron exposure for grating structure and secondary epitaxy. BRIEF DESCRIPTION OF DRAWINGS

[0033] Figure 1 A perspective structural diagram of an embodiment of a semiconductor whispering gallery microcavity bistable laser is schematically shown.

[0034] Figure 2 A top plan view of a whispering gallery microcavity of an embodiment of a semiconductor whispering gallery microcavity bistable laser and a two-dimensional simulation model diagram of mode characteristics of the whispering gallery microcavity calculated according to a finite element method are schematically shown.

[0035] Figure 3 A corresponding relationship between a mode quality factor (Q value) and a characteristic wavelength of a whispering gallery microcavity is schematically shown. Figure 2 The corresponding relationship between the mode quality factor (Q value) and the characteristic wavelength of the whispering gallery microcavity is calculated according to a finite element simulation model shown in the figure when the straight side length of the whispering gallery microcavity in the figure is a=8 μm, the arc side deformation degree is δ=0.1 μm, the aperture size of the polygonal through hole is l=7.6 μm, the window width of the P-face electrode is w=1.6 μm, and the waveguide width of the waveguide structure is d=2 μm.

[0036] Figure 4 A corresponding relationship between a mode quality factor (Q value) and a characteristic wavelength of a whispering gallery microcavity is schematically shown. Figure 3 The mode field distribution diagrams corresponding to the first reflection mode and the second reflection mode in the mode quality factor and characteristic wavelength corresponding diagram of the microcavity and the four-time reflection coupling mode of the whispering gallery microcavity with the same parameters under the square ring electrode window and the square hole are shown.

[0037] Figure 5 A power-current test curve diagram of an actually prepared semiconductor whispering gallery microcavity bistable laser is schematically shown.

[0038] Figure 6 Output spectrum diagrams of an actually prepared semiconductor whispering gallery microcavity bistable laser in a "high state" and a "low state" in a bistable region are shown.

[0039] REFERENCE SIGNS

[0040] 1-N-face electrode;

[0041] 2-N-type substrate;

[0042] 3-whispering gallery microcavity;

[0043] 301-N-type confinement layer;

[0044] 302-active layer;

[0045] 303-P-type confinement layer;

[0046] 4 - P-face electrode window

[0047] 5 - Polygon via

[0048] 6 - Waveguide structure

[0049] 7 - Cleavage plane DETAILED DESCRIPTION

[0050] In order to make the objects, technical solutions, and advantages of the present application clearer, the following will further describe the present application with specific embodiments and with reference to the drawings.

[0051] However, it should be understood that these descriptions are only exemplary, and are not intended to limit the scope of the present application. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the present application. However, it will be apparent to one skilled in the art that one or more embodiments can be practiced without these specific details. In other instances, well-known methods have not been described in detail in order to avoid unnecessarily obscuring the concepts of the present application.

[0052] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the present application. As used herein, the term "includes" indicates the presence of the features, steps, operations, but does not exclude the presence or addition of one or more other features.

[0053] All terms used herein (including technical and scientific terms) have the meanings commonly understood by one of ordinary skill in the art, unless otherwise defined. It should be noted that the terms used herein should be interpreted as having meanings consistent with the context of the specification, and should not be interpreted in an idealized or overly formal manner.

[0054] The following schematically illustrates a semiconductor whispering gallery microcavity bistable laser designed, it should be noted that the illustration is only a specific embodiment of the present application, and cannot limit the scope of protection of the present application.

[0055] Figure 1 The three-dimensional structure of the semiconductor whispering gallery microcavity bistable laser is schematically shown.

[0056] As Figure 1As shown, the semiconductor whispering gallery mode cavity bistable laser: N-face electrode (1); N-type substrate (2), located on the N-face electrode (1); whispering gallery mode cavity (3), located on the N-type substrate (2), the top of the whispering gallery mode cavity (3) is provided with a P-face electrode window (4), a vertical polygonal through hole (5) is opened in the middle of the whispering gallery mode cavity (3), the whispering gallery mode cavity (3) is used for generating two groups of reflection modes, the two groups of reflection modes have coupling, the polygonal through hole (5) is used to remove the coupling to form a first reflection mode and a second reflection mode, and the P-face electrode window (4) is used for non-uniform injection of current, so that the non-injection area outside the field distribution of the first reflection mode stores carriers, and the lasing threshold of the first reflection mode and the lasing threshold of the second reflection mode are different.

[0057] In the embodiment of the present disclosure, the cross-sectional shape of the polygonal through hole (5) is square. The top angle of the projection of the polygonal through hole (5) on the N-type substrate (2) is opposite to the top angle of the projection of the field distribution of one of the two groups of reflection modes on the N-type substrate (2), and when the aperture size exceeds a certain threshold, the mode fields of the two groups of reflection modes are different, and the coupling between the two groups of reflection modes is thus removed.

[0058] In the embodiment of the present disclosure, the aperture size of the polygonal through hole (5) is used to adjust the value difference between the quality factors of the first reflection mode and the second reflection mode.

[0059] In the embodiment of the present disclosure, the cross-sectional shape of the P-face electrode window (4) is square ring.

[0060] In the embodiment of the present disclosure, the non-uniform distribution of refractive index in the cavity caused by the P-face electrode window (4) and the difference in current heat effect can exacerbate the difference between the first reflection mode and the second reflection mode, that is, the P-face electrode window (4) can further remove the coupling.

[0061] The projection of the P-face electrode window (4) on the N-type substrate (2) overlaps with the projection of the field distribution of the first reflection mode on the N-type substrate (2), the window width of the P-face electrode window (4) is relatively narrow, so the lateral diffusion of the carriers in the whispering gallery mode cavity (3) is limited, the area outside the overlapping area (that is, the area outside the mode field of the first reflection mode) is used as a non-injection area, the non-injection area is used as a saturable absorber, and when the current increases, enough carriers are gradually stored (at this time, the second reflection mode does not reach the lasing threshold at low current), so that the lasing thresholds of the first reflection mode and the second reflection mode are different, and when the second reflection mode reaches the lasing threshold at a certain current, the output power exhibits a counterclockwise "hysteresis loop" bistability as the current decreases.

[0062] In this embodiment, the cross-sectional shape of the whispering wall microcavity (3) is an octagon with equal side lengths. The sides of the octagon are arc edges, and the deformation of each arc edge is consistent. The field distribution of the mode field generated in the whispering wall microcavity (3) is more localized near the center of the cavity, thereby improving the quality factor of the two sets of reflection modes, which is beneficial to realizing low threshold lasing of the bistable laser.

[0063] In this embodiment of the present disclosure, when the number of apex angles of the cross section of the P-face electrode window (4) is the same as the number of apex angles of the cross section of the polygonal through hole (5), the apex angle of the cross section of the P-face electrode window (4) is directly opposite to the apex angle of the cross section of the polygonal through hole (5).

[0064] In this embodiment, the vertical central axis positions of the whispering wall microcavity (3), the P-surface electrode window (4), and the polygonal through hole (5) are the same.

[0065] In this embodiment of the disclosure, the whispering wall microcavity (3) includes:

[0066] An N-type confinement layer (301) is located on the N-type substrate and is used to reduce the radiation loss of laser light in the vertical direction;

[0067] An active layer (302), located on the N-type confinement layer (301), is used to generate an optical field;

[0068] A P-type confinement layer (303) is located on the active layer (302) and is used in conjunction with the N-type confinement layer (301) to increase the ability to confine the light field.

[0069] In this embodiment, the waveguide structure (6) is directly connected to one of the apex corners of the whispering-gallery microcavity (3) for directional laser emission.

[0070] In this embodiment, the cleavage surface (7) is disposed at the other end of the waveguide structure (6) opposite to the whispering wall microcavity (3) to determine the laser emission position.

[0071] In this embodiment of the disclosure, the semiconductor whispering-gallery microcavity bistable laser with the above structure can be fabricated with only simple planar processes, and can be achieved with a minimum of 3 photolithography steps. It does not require additional electron beam exposure to make grating structures, nor does it require secondary epitaxy.

[0072] Figure 2 The illustration shows Figure 1 A top-view plan of the whispering-gallery microcavity bistable laser from a semiconductor company, and a simulation model of the whispering-gallery microcavity using the finite element method.

[0073] In this embodiment, the straight edge length a is used to describe the size of the sound-gallery microcavity (3), the surface area determines the optical path of the total internal reflection light in the sound-gallery microcavity (3), and thus determines the size of the longitudinal mode spacing; the arc edge deformation δ represents the perpendicular distance between the midpoint of the arc edge and the straight edge of the sound-gallery microcavity (3); R represents the actual radius corresponding to each arc edge; l represents the side length of the polygonal through hole (5) when it is a square hole; w represents the width of the square ring when the P-surface electrode window (4) is a square ring; d represents the width of the waveguide structure.

[0074] In this embodiment of the disclosure, in the simulation model, the refractive index of the cavity part of the whispering wall microcavity (3) is set to 3.2, and the outer side is wrapped with BCB (benzocyclobutene) with a refractive index of 1.54, forming a high refractive index difference with the cavity, thereby satisfying the total internal reflection limit of the light inside the cavity. The black display part around the perimeter is the perfect matching layer (PML) to eliminate the influence of boundary reflection, and the calculation is terminated at the boundary of the model.

[0075] Figure 3 The correspondence between the quality factor (Q value) and the characteristic wavelength of the mode in the whispering-gallery microcavity (3) is schematically shown.

[0076] In this embodiment of the disclosure, according to Figure 2 The parameters of the whispering-gallery microcavity (3) are defined as follows: when the straight side length a = 8 μm, the deformation δ = 0.1 μm, l = 7.6 μm, w = 1.6 μm, and d = 2 μm, the correspondence between the quality factor (Q value) of the mode in the whispering-gallery microcavity (3) and the characteristic wavelength is calculated according to the finite element simulation model.

[0077] In this embodiment, there are three sets of longitudinal modes in the range of 1536nm-1566nm, with a longitudinal mode interval of approximately 15nm. Within each set of longitudinal modes, the high-Q modes are the fundamental modes of two sets of fourth-order reflection modes. Since the higher-order modes of the fourth-order reflection modes and the eighth-order reflection modes have low Q values, they are not displayed in the simulation results. The first and second reflection modes within each set of longitudinal modes each have two characteristic solutions, belonging to their respective degenerate modes. Because the apex of the square aperture is closer to the maximum value of the field distribution of the second reflection mode, the Q value of the second reflection mode is lower than that of the first reflection mode. Taking the longitudinal mode at 1551nm as an example, the wavelength of the first reflection mode is 1551.33nm and the Q value is 49386, while the wavelength of the second reflection mode is 1551.35nm and the Q value is 4523.

[0078] Figure 4 The diagram illustrates the coupling mode field distribution of the first reflection mode (mode 1), the second reflection mode (mode 2), and the whispering wall microcavity (3) with the same parameters in the presence of a square annular electrode window and a central square hole, under the above data conditions, in the absence of a square annular electrode window and a polygonal through hole.

[0079] In the embodiments of the present disclosure, as shown in Figure 4 The field distributions of the first and second reflection modes are respectively uniform in the two groups of next-adjacent sides in the corresponding octagonal whispering gallery microcavity, both of which are more close to the center of the microcavity, and the field distribution is weaker in the top corner region, thus having a higher Q value. The coupling mode field distribution is equivalent to combining the two four-time reflection modes, and uniformly occupies the entire octagonal whispering gallery microcavity. In the regular octagonal microcavity, the two groups of four-time reflection modes are always degenerate together, and when an asymmetric factor such as a square hole is introduced, they will be forced to split apart and thus exhibit some different properties.

[0080] Figure 5 The power-current test curve of the semiconductor whispering gallery microcavity bistable laser is schematically given.

[0081] In the embodiments of the present disclosure, as shown in Figure 5 It can be seen that the coupling output power shows a clear counterclockwise "magnetic hysteresis loop" bistable phenomenon during the rising and falling of the current. It can be seen that the maximum bistable region current range is more than 12 mA.

[0082] In the embodiments of the present disclosure, the curve test adopts multi-mode fiber (MMF) coupling, and the temperature is maintained at 15 degrees Celsius during the test by using a TEC.

[0083] Figure 6 The output spectrum diagram of the semiconductor whispering gallery microcavity bistable laser in the "high state" and "low state" in the bistable region (current I=24 mA) is schematically given.

[0084] In the embodiments of the present disclosure, as shown in Figure 6 During the rising of the current, the first reflection mode is always in the lasing state. Taking the longitudinal mode at 1542 nm as an example, the wavelength of the first reflection mode in the low state is 1542.45 nm. Since the mode field region of the second reflection mode is in the non-injection region, it does not obtain sufficient gain to lase during the rising of the current. With the gradual accumulation of carriers, the second reflection mode lases when the current is a certain value, at which time the laser output is in the "high state". With the decrease of the current, the mode intensity gradually weakens and eventually disappears. In the longitudinal mode at 1542 nm in the "high state", the wavelengths of the first and second reflection modes are 1542.41 nm and 1542.3 nm, respectively. The wavelength interval is caused by the combined effects of the non-uniform distribution of refractive index and the difference in thermal effects.

[0085] Thus far, the embodiments of the present application have been described in detail with reference to the accompanying drawings. It should be noted that the implementation not shown or described in the accompanying drawings or the main text of the specification is in a form known to those skilled in the art, and is not described in detail. In addition, the definition of each component described above is not limited to the various specific structures, shapes or manners mentioned in the embodiments, and can be simply changed or replaced by those skilled in the art.

[0086] It will be understood by those skilled in the art that features recited in the various embodiments and / or claims of the present application can be combined or / and integrated in various combinations or / and integrations, even if such combinations or integrations are not explicitly recited in the present application. In particular, features recited in the various embodiments and / or claims of the present application can be combined and / or integrated in various combinations or / and integrations without departing from the spirit and teachings of the present application. All such combinations and / or integrations fall within the scope of the present application.

[0087] The above-described specific embodiments further illustrate the objects, technical solutions and advantages of the present application. It should be understood that the above-described embodiments are merely specific embodiments of the present application and are not intended to limit the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall fall within the scope of protection of the present application.

Claims

1. A semiconductor whispering gallery microcavity bistable laser, characterized in that, The application relates to a vertical cavity surface emitting laser (VCSEL) device. The application comprises: An N-face electrode (1); An N-type substrate (2) on the N-face electrode (1); 2. The semiconductor whispering gallery microring bistable laser of claim 1, wherein, An echo-wall micro-cavity (3) on the N-type substrate (2), the top of the echo-wall micro-cavity (3) is provided with a P-face electrode window (4), a vertical polygonal through-hole (5) is formed in the middle of the echo-wall micro-cavity (3), the echo-wall micro-cavity (3) is used for generating two groups of reflection modes, the two groups of reflection modes have coupling, the polygonal through-hole (5) is used for eliminating the coupling to form a first reflection mode and a second reflection mode, the P-face electrode window (4) is used for non-uniform injection of current, so that a non-injection area outside the field distribution of the first reflection mode stores carriers, and the lasing threshold of the first reflection mode and the lasing threshold of the second reflection mode are different. The cross-sectional shape of the polygonal through-hole (5) is square; 3. The semiconductor whispering gallery microring bistable laser of claim 1, wherein, The top angle of the projection of the polygonal through-hole (5) on the N-type substrate (2) is opposite to the top angle of the projection of the field distribution of one of the two groups of reflection modes on the N-type substrate (2), and difference is generated between the mode fields of the two groups of reflection modes.

4. The semiconductor whispering gallery microring bistable laser of claim 1, wherein, The aperture size of the polygonal through-hole (5) is used for adjusting the value difference between the quality factors of the first reflection mode and the second reflection mode. The cross-sectional shape of the P-face electrode window (4) is square ring; 5. The semiconductor whispering gallery microring bistable laser of claim 1, wherein, The projection of the P-face electrode window (4) on the N-type substrate (2) overlaps with the projection of the field distribution of the first reflection mode on the N-type substrate (2), and the lateral diffusion of the carriers in the echo-wall micro-cavity (3) is limited. The cross-sectional shape of the echo-wall micro-cavity (3) is an octagon with equal side lengths; 6. The semiconductor whispering gallery microring bistable laser of claim 1, wherein, The sides of the octagon are arc sides, the deformation degrees of each arc side are consistent, and the arc sides are used for improving the values of the quality factors of the two groups of reflection modes.

7. The semiconductor whispering gallery microring bistable laser of claim 1, wherein, The number of top angles of the cross section of the P-face electrode window (4) is the same as that of the cross section of the polygonal through-hole (5), and the top angles of the cross section of the P-face electrode window (4) are opposite to those of the cross section of the polygonal through-hole (5).

8. The semiconductor whispering gallery microring bistable laser of claim 1, wherein, The vertical central axis positions of the echo-wall micro-cavity (3), the P-face electrode window (4) and the polygonal through-hole (5) are the same. The echo-wall micro-cavity (3) comprises: An N-type limiting layer (301) on the N-type substrate, which is used for reducing the radiation loss of the laser in the vertical direction; An active layer (302) on the N-type limiting layer (301), which is used for generating an optical field; 9. The semiconductor whispering gallery microring bistable laser of claim 1, wherein, A P-type limiting layer (303) on the active layer (302), which is used for cooperating with the N-type limiting layer (301) to increase the limiting ability to the optical field.

10. The semiconductor whispering gallery microring bistable laser of claim 9, wherein, A waveguide structure (6) directly connected with one of the top angles of the echo-wall micro-cavity (3), which is used for directional emission of the laser. A cleavage surface (7) arranged at the other end of the waveguide structure (6) opposite to the echo-wall micro-cavity (3), which is used for determining the emission position of the laser.

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