A multi-band infrared polarization selective photodetector array and a method of fabricating the same

Abstract

The application discloses a multi-band infrared polarization selection photoelectric detection array and a preparation method thereof in the field of photoelectric devices, and the photoelectric detection array comprises a transparent insulating substrate, and array-distributed internal unit pixel detectors are arranged above the transparent insulating substrate, wherein the internal unit pixel detectors comprise a gate electrode, an insulating layer, an active layer, a source-drain electrode and a photosensitive layer, the gate electrode is arranged above the transparent insulating substrate, the gate electrode is covered with the insulating layer, the active layer is arranged above the insulating layer, and the photosensitive layer and the source-drain electrode are arranged above the active layer. The photoelectric detection array can be combined with a polarimetry instrument and a chemical analysis platform device in aspects such as component identification and concentration detection of a liquid solution; the design and preparation of the field effect transistor photoelectric polarization selection device can simultaneously cancel a polaroid, realize integration of polarization angle detection and wavelength absorption detection, and can monitor the component and the concentration of the solution in a characteristic waveband of the solution.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of optoelectronic devices, and particularly relates to a multi-band infrared polarization selective photodetection array and a preparation method thereof. BACKGROUND

[0002] In recent years, infrared photodetectors with field effect transistor structure have shown great advantages in sensitivity, responsivity and noise suppression, and have become a research hotspot for global researchers. At present, photodetectors based on anisotropic two-dimensional nanosheet materials have shown superior polarization light selection characteristics, such as Ref: X. Zhou et al., "Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity," (in English), Advanced Science, Article vol. 5, no. 8, p. 9, Aug 2018, Art. no. 1800478. Although these devices have shown good polarization angle selectivity in near-infrared polarization detection, the polarization detector based on two-dimensional materials still inhibits the further application of the polarization detector in terms of photoelectric detection degree and noise suppression.

[0003] Van der Waals heterojunctions have shown high selectivity and obvious polarization angle in infrared light polarization selection, such as Ref: Z. Yang et al., "WSe2 / GeSe heterojunction photodiode with giant gate tunability," Nano Energy, vol. 49, pp. 103-108, 2018. The van der Waals heterojunction composed of quantum dots and two-dimensional materials has similar characteristics in polarization selection as two-dimensional nanomaterials. Therefore, for the gain of infrared light polarization response characteristics of optoelectronic devices, high-integration photodetection array, high-polarization-selective infrared photodetector has important application potential in chemical liquid monitoring, medical diagnosis and other aspects. The current infrared polarization imaging photodetector has a problem of insufficient photoelectric detection degree in the polarization selection of the near-infrared band, which increases the design difficulty of the peripheral circuit, and further weakens the photoelectric effect. SUMMARY

[0004] In view of the deficiencies of the prior art, the purpose of the present application is to provide a multi-band infrared polarization selective photodetection array and a preparation method thereof, so as to solve the problems raised in the background art.

[0005] The purpose of the present application can be achieved by the following technical solutions:

[0006] A multi-band infrared polarization selective photoelectric detection array, the photoelectric detection array comprising a transparent insulating substrate, an array of internal unit pixel detectors distributed above the transparent insulating substrate, the internal unit pixel detectors comprising a gate electrode, an insulating layer, an active layer, a source-drain electrode, a photosensitive layer, the gate electrode being mounted above the transparent insulating substrate, the gate electrode being provided with a coated insulating layer thereon, the insulating layer being provided with the active layer thereon, the active layer being provided with the photosensitive layer and the source-drain electrode thereon.

[0007] Preferably, the preparation method of the photoelectric detection array comprises the following steps:

[0008] Step 1: ultrasonic oscillation cleaning of the transparent insulating substrate with acetone, alcohol and deionized water;

[0009] Step 2: preparation of the gate electrode on the cleaned transparent insulating substrate by inkjet printing, using a printing voltage of 20V and silver ion inkjet ink;

[0010] Step 3: preparation of the insulating layer by spin coating, dispensing, sputtering or inkjet printing to coat the gate electrode;

[0011] Step 4: magnetron sputtering of the lead selenide active layer on the surface of the insulating layer;

[0012] Step 5: placing the prepared insulating substrate, gate electrode, insulating layer and active layer on the glue uniformizing table, dispensing 5ml of the glue solution by inkjet printing, standard patterning, and photosensitive layer superposition on the active layer;

[0013] Step 6: placing the sample after dispensing in step 5 into a 60℃ constant temperature oven for 1 hour of constant temperature drying;

[0014] Step 7: printing of the source-drain electrode in the active layer at both ends of the pattern to form the photoelectric detection array.

[0015] Preferably, the glue solution in step 5 is prepared by the following method:

[0016] Mixing 0.5mol / L germanium selenide fragment dispersion liquid with 0.02mol / L lead sulfide quantum dot dispersion liquid, adjusting the solution PH value by adding a 3:1 mixed solution of toluene and potassium hydrogen phthalate, heating at 75℃ for 1 hour when the PH value is 5.5, and then standing in a 60℃ constant temperature oven for 3 hours, and then naturally reducing to room temperature to obtain a glue solution dispersed with quantum dots and nanosheets.

[0017] Preferably, the photosensitive layer formed by inkjet printing of the glue solution has a 152 degree polarization selection at 920nm and a 141 degree polarization selection at 1040nm, and is used for detecting and discriminating the composition, concentration and cell tissue of a drug solution.

[0018] Advantages of the present application:

[0019] 1、The photoelectric detection array has a quantum dot embedded field effect transistor with stronger infrared polarization selection characteristics, and can be combined with a polarimeter and a chemical analysis platform device in the aspects of component discrimination and concentration detection of a liquid solution by means of spectroscopy analysis, including component and concentration detection of hospital infusion drugs, concentration detection of electronic cigarette oil and the like.

[0020] 2、The photoelectric detection array adjusts the design and preparation of the field effect transistor photoelectric polarization selection device, can cancel the polaroid at the same time, realizes integration of polarization angle detection and wavelength absorption detection, and can monitor the component and concentration of the solution in the characteristic waveband of the solution. BRIEF DESCRIPTION OF DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments or prior art description will be briefly introduced. Obviously, for those skilled in the art, other drawings can also be obtained without creative labor based on these drawings.

[0022] Figure 1 is a cross-sectional structure schematic diagram of the photoelectric detection array of the present application;

[0023] Figure 2 is a scanning electron microscope schematic diagram of the cross section of the present application;

[0024] Figure 3 is a polarization selection detection schematic diagram of the solution in the present application;

[0025] Figure 4 is a polarization light selection schematic diagram of the device of the present application for 920nm incident light;

[0026] Figure 5 is a polarization light selection schematic diagram of the device of the present application for 1040nm incident light. DETAILED DESCRIPTION

[0027] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0028] Please refer to Figure 1As shown, a multi-band infrared polarization selective photodetector array, the photodetector array comprises a transparent insulating substrate 1, the transparent insulating substrate 1 is glass, quartz substrate, etc., the transparent insulating substrate 1 is provided with array distribution of internal unit pixel detector, the internal unit pixel detector comprises a gate electrode 2, an insulating layer 3, an active layer 4, a source-drain electrode 5, a photosensitive layer 6, the gate electrode 2 is installed on the transparent insulating substrate 1, the gate electrode 2 is provided with the coated insulating layer 3, the insulating layer 3 is provided with the active layer 4, and the active layer 4 is provided with the photosensitive layer 6 and the source-drain electrode 5.

[0029] A preparation method of a multi-band infrared polarization selective photodetector array, comprising the following steps:

[0030] Step 1, the transparent insulating substrate 1 of 10cm*10cm is ultrasonically oscillated and cleaned by acetone, alcohol and deionized water, each step is 15 minutes, so that the device preparation surface of the transparent insulating substrate is free of oil stains, dust and the like, and the uniformity of film deposition is ensured;

[0031] Step 2, the gate electrode 2 is prepared by inkjet printing, using a printing voltage of 20V and silver ion inkjet ink, so that the thickness is 200μm, and the height difference between the center and the edge is not more than 5μm;

[0032] Step 3, the insulating layer 3 is prepared by spin coating, dispensing, sputtering or inkjet printing, so that the surface flatness is ensured, and the relative value variance of height is less than 10nm;

[0033] Step 4, the surface of the insulating layer is subjected to magnetron sputtering of lead selenide active layer 4;

[0034] Step 5, a 0.5mol / L germanium selenide fragment dispersion liquid is mixed with a 0.02mol / L lead sulfide quantum dot dispersion liquid, a 3:1 mixed solution of toluene and potassium hydrogen phthalate is added to adjust the solution PH value, when the PH value is 5.5, the solution is heated in a 75℃ water bath for 1 hour, and then is placed in a constant temperature oven at 60℃ for 3 hours, and then is naturally cooled to room temperature to obtain a quantum dot / nanosheet dispersed colloidal solution;

[0035] Step 6, the substrate and the device are placed on a glue uniformizing table, 5ml of the colloidal solution is selected at a time, and a dispensing process is prepared by inkjet printing, and a standard patterning treatment is performed, so that the photosensitive layer 6 is superimposed at the active layer;

[0036] Step 7, the sample after dispensing is sent into a 60℃ constant temperature oven for constant temperature drying for 1 hour;

[0037] Step 8, the source-drain electrode 5 is printed in the active layer at both ends of the pattern, and the photodetector array is formed.

[0038] Step 9, perform electrical property test, and electrical characterization is performed on polarized incident infrared light at multiple angles to obtain test data.

[0039] Figure 3 The light path diagram of the solution detection array is shown, and the polarization angle selection test is performed after the polarization light selection.

[0040] As shown in Figure 4 , for the 920nm infrared light pulse input signal, the polarization plate is used to change the incident angle of the polarized light, and the parameter comparison of the polarization selection characteristic is performed, and it is found that the device has strong photoelectric absorption and polarization selection characteristic in the direction of 152 degrees, and the photoelectric response in other directions conforms to the general decay of polarized light, and high selectivity is exhibited in polarization, and high sensitivity detection can be realized.

[0041] As shown in Figure 5 , for the 1040nm infrared light pulse input signal, the polarization plate is used to change the incident angle of the polarized light, and the parameter comparison of the polarization selection characteristic is performed, and it is found that the device has strong photoelectric absorption and polarization selection characteristic in the direction of 141 degrees, and the photoelectric response in other directions conforms to the general decay of polarized light, and high selectivity is exhibited in polarization, and high sensitivity detection can be realized.

[0042] The present application adopts the polarization light photosensitive layer (i.e., the photosensitive layer 6) of the mixed colloid of quantum dots and nanosheets, and the selectivity of the van der Waals heterojunction to the polarized light, and the 152-degree polarization selection at 920nm and the 141-degree polarization selection at 1040nm can be used for the fine discrimination of the components and concentration of cephalosporin drugs.

[0043] In the description of the present application, the description of the terms "one embodiment", "example", "specific example" and the like means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In the present application, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0044] The basic principles, main features and advantages of the present application are shown and described above. It should be understood by those skilled in the art that the present application is not limited by the above embodiments, and the above embodiments and descriptions in the specification are only illustrative of the principles of the present application. Without departing from the spirit and scope of the present application, various changes and improvements can be made to the present application, and these changes and improvements all fall within the scope of the claimed present application.

Claims

1. A multi-band infrared polarization selective photodetector array comprising a transparent insulating substrate (1), characterized in that, The transparent insulating substrate (1) is provided with an array of internal unit pixel detectors, which include a gate electrode (2), an insulating layer (3), an active layer (4), a source-drain electrode (5), and a photosensitive layer (6); the gate electrode (2) is installed on the transparent insulating substrate (1); the gate electrode (2) is provided with a coated insulating layer (3) thereon; the insulating layer (3) is provided with the active layer (4) thereon; and the active layer (4) is provided with the photosensitive layer (6) and the source-drain electrode (5) thereon. The preparation method of the photoelectric detection array comprises the following steps: Step 1: ultrasonic oscillation cleaning of the transparent insulating substrate (1) with acetone, alcohol, and deionized water; Step 2: preparation of the gate electrode (2) on the cleaned transparent insulating substrate (1) by inkjet printing, using a printing voltage of 20 V and silver ion inkjet ink; Step 3: preparation of the insulating layer (3) by spin coating, dispensing, sputtering, or inkjet printing, so that the insulating layer (3) covers the gate electrode (2); Step 4: magnetron sputtering of a lead selenide active layer (4) on the surface of the insulating layer (3); Step 5: placing the prepared insulating substrate (1), gate electrode (2), insulating layer (3), and active layer (4) on a glue spreading table, dispensing 5 ml of glue solution at a time by inkjet printing, and performing standard patterning to superimpose the photosensitive layer (6) on the active layer (4); Step 6: placing the dispensed sample in a 60℃ constant temperature oven for 1 hour of constant temperature drying; Step 7: printing of the source-drain electrode (5) in the active layer (4) at both ends of the pattern to form a photoelectric detection array; The glue solution in step 5 is prepared as follows: Mixing 0.5 mol / L germanium selenide fragment dispersion liquid with 0.02 mol / L lead sulfide quantum dot dispersion liquid, adjusting the solution pH value by adding a 3:1 mixture solution of toluene and potassium hydrogen phthalate, heating at 75℃ for 1 hour when the pH value is 5.5, and then placing in a 60℃ constant temperature oven for 3 hours, and then naturally cooling to room temperature to obtain a quantum dot and nanosheet dispersed glue solution; The photosensitive layer (6) formed by inkjet printing of the glue solution has a 152-degree polarization selection at 920 nm and a 141-degree polarization selection at 1040 nm, and is used for detecting and distinguishing the composition and concentration of a drug solution and cell tissue.

2. A multi-band infrared polarization selective photodetection array according to claim 1, wherein, The size of the transparent insulating substrate (1) is 10 cm x 10 cm, and the material includes glass and quartz.

3. A multi-band infrared polarization-selective photodetection array according to claim 1, wherein The ultrasonic oscillation cleaning time of the transparent insulating substrate (1) with acetone, alcohol, and deionized water in step 1 is at least 15 minutes for each step.

4. A multi-band infrared polarization-selective photodetection array according to claim 1, wherein The thickness of the gate electrode (2) in step 2 is 200 μm, and the height difference between the center and the edge is not more than 5 μm.

5. A multi-band infrared polarization-selective photodetection array according to claim 1, wherein The height relative value variance of the insulating layer (3) in step 3 is less than 10 nm.

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