Photonics integrated chip, millimeter wave transmitter and receiver front-end module

Abstract

The application provides a photonic integrated chip, a millimeter wave transmitter and a receiver front-end module, and the photonic integrated chip comprises an optical modulator, an optical detector, an optical attenuator, an optical coupler, a first optical grating coupler, a second optical grating coupler and a third optical grating coupler; the first optical grating coupler is connected with the optical modulator; the second optical grating coupler is connected with the optical attenuator; the optical modulator and the optical attenuator are connected with the optical coupler respectively; and the optical coupler is connected with the optical detector and the third optical grating coupler respectively. The photonic integrated chip provided by the application comprises the optical modulator, the optical detector, the optical attenuator, the optical coupler, the first optical grating coupler, the second optical grating coupler and the third optical grating coupler, can realize the functions of receiving and transmitting, can be simultaneously applied to a millimeter wave transmitter front-end module and a millimeter wave receiver front-end module, and has the advantages of simple structure, small size, light weight, low energy consumption and reduced equipment cost.

Description

Technical Field

[0001] This invention relates to the field of communication chip technology, and in particular to a photonic integrated chip, a millimeter-wave transmitter, and a receiver front-end module. Background Technology

[0002] With the rise of emerging applications such as big data, artificial intelligence, and the Internet of Things, higher demands have been placed on communication capacity, which has also promoted the construction of 5G base stations and the research on 6G communication.

[0003] In 6G satellite communication, carrier frequencies will become increasingly higher, already covering Ka, Q, and V bands. Furthermore, to improve the reliability and security of inter-satellite communication, the carrier frequency needs to be flexible and agile. In 6G mobile communication, carrier frequencies will cover millimeter-wave to terahertz bands, and to improve communication capacity and sensing accuracy, higher demands are placed on signal bandwidth. In summary, 6G communication requires a high-carrier-frequency, high-bandwidth, and agile RF transceiver front-end. This front-end should also be small in size, lightweight, and low in power consumption, and be compatible with the communication payloads of various application platforms.

[0004] As the frequency of millimeter-wave communication technology based on electronics continues to increase, the characteristic parameters of electronic devices are gradually approaching their theoretical limits. The electronic technology route faces a series of technical challenges, such as large frequency conversion losses and limited carrier frequency and bandwidth. The design difficulty and manufacturing cost of chips are also increasing.

[0005] Photonic-assisted millimeter-wave communication technology is an emerging technology that adopts a "top-down" approach. This involves generating millimeter-wave signals through heterodyne beat frequency generation of two lasers, and the transmission, reception, and processing of these signals can all be completed in the optical domain. However, most photonic-assisted millimeter-wave communication systems still rely on discrete components, resulting in problems such as large size, heavy weight, high energy consumption, high cost, and high complexity. Summary of the Invention

[0006] To address the problems existing in the prior art, embodiments of the present invention provide a photonic integrated chip, a millimeter-wave transmitter, and a receiver front-end module.

[0007] This invention provides a photonic integrated chip, comprising:

[0008] Optical modulator, optical detector, optical attenuator, optical coupler, first grating coupler, second grating coupler, and third grating coupler;

[0009] The first grating coupler is connected to the optical modulator;

[0010] The second grating coupler is connected to the optical attenuator;

[0011] The optical modulator and the optical attenuator are respectively connected to the optical coupler;

[0012] The optical coupler is connected to the photodetector and the third grating coupler, respectively.

[0013] In some embodiments, the first grating coupler is used to input a first local oscillator signal;

[0014] The second grating coupler is used to input the second local oscillator signal;

[0015] The wavelengths of the first local oscillator signal and the second local oscillator signal are different.

[0016] In some embodiments, where the photonic integrated chip is used to perform the emission function...

[0017] The optical modulator is used to modulate the baseband signal onto the first local oscillator optical signal;

[0018] The optical attenuator is used to modulate the power control signal onto the second local oscillator optical signal;

[0019] The optical coupler is used to mix the modulated first local oscillator signal and the second local oscillator signal to determine the first mixed light.

[0020] The third grating coupler is used to output the first mixing light;

[0021] The photodetector is used to generate a millimeter-wave signal based on the first mixed light.

[0022] In some embodiments, where the photonic integrated chip is used to perform a receiving function...

[0023] The optical modulator is used to modulate the millimeter-wave signal onto the first local oscillator optical signal;

[0024] The optical attenuator is used to modulate the power control signal onto the second local oscillator optical signal;

[0025] The optical coupler is used to mix the modulated first local oscillator signal and the second local oscillator signal to determine the second mixed light.

[0026] The third grating coupler is used to output the second mixing light;

[0027] The photodetector is used to generate a baseband signal based on the second mixing light.

[0028] In some embodiments, the optical coupler includes:

[0029] It has two single-mode input waveguides, one multimode interference waveguide, and two single-mode output waveguides.

[0030] In some embodiments, the photonic integrated chip is manufactured based on SOI integrated optical path technology.

[0031] The present invention also provides a millimeter-wave transmitter front-end module, comprising: the photonic integrated chip described in any of the above claims.

[0032] In some embodiments, the device further includes: a driver amplifier chip and a power amplifier chip;

[0033] The driver amplifier chip is connected to the optical modulator;

[0034] The power amplifier chip is connected to the photodetector.

[0035] The present invention also provides a millimeter-wave receiver front-end module, comprising: the photonic integrated chip described in any of the above claims.

[0036] In some embodiments, the amplifier further includes: a transimpedance amplifier chip and a low-noise amplifier chip;

[0037] The low-noise amplifier chip is connected to the optical modulator;

[0038] The transimpedance amplifier chip is connected to the photodetector.

[0039] The photonic integrated chip, millimeter-wave transmitter, and receiver front-end module provided by this invention include: an optical modulator, a photodetector, an optical attenuator, an optical coupler, a first grating coupler, a second grating coupler, and a third grating coupler. It can realize the function of receiving or transmitting and can be applied to both millimeter-wave transmitter front-end modules and millimeter-wave receiver front-end modules. It has a simple structure, small size, light weight, and low power consumption, thus reducing equipment costs. Attached Figure Description

[0040] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0041] Figure 1This is one of the structural schematic diagrams of the photonic integrated chip provided in the embodiments of the present invention;

[0042] Figure 2 This is the second schematic diagram of the structure of the photonic integrated chip provided in the embodiment of the present invention;

[0043] Figure 3 This is a schematic diagram illustrating the working process of the photonic integrated chip implementing the emission function provided in this embodiment of the invention;

[0044] Figure 4 This is a schematic diagram illustrating the working process of the photonic integrated chip implementing the receiving function according to an embodiment of the present invention;

[0045] Figure 5 This is a schematic diagram of the structure of the millimeter-wave transmitter front-end module provided in an embodiment of the present invention;

[0046] Figure 6 This is a schematic diagram of the structure of the millimeter-wave receiver front-end module provided in an embodiment of the present invention. Detailed Implementation

[0047] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0048] The terms "first," "second," etc., used in the specification and claims of this invention are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such terms can be used interchangeably where appropriate so that embodiments of the invention can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first" and "second" are generally of the same class, not limited in number; for example, the first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0049] Compared with electronic-based millimeter-wave communication technology, photonic-assisted millimeter-wave communication technology has advantages such as low radio frequency loss, low heat generation, and resistance to electromagnetic interference. In addition, it has some significant performance advantages: ① Based on the up-conversion function of the photodetector and the down-conversion function of the optical modulator, it is easy to realize the generation and reception of ultra-high frequency millimeter-wave signals, and by changing the wavelength difference between the two local oscillator optical signals, rapid and wide-range carrier frequency agility can be achieved; ② Based on the electro-optical conversion function of the optical modulator and the photoelectric conversion function of the photodetector, the bandwidth bottleneck of electronic modulation / demodulation technology can be broken through, realizing ultra-high-speed modulation / demodulation.

[0050] However, most photonic-assisted millimeter-wave communication systems are still built using discrete components, which suffers from problems such as large size, heavy weight, high power consumption, high cost, and high complexity. Therefore, embodiments of the present invention provide a photonic integrated chip.

[0051] Figure 1 This is one of the structural schematic diagrams of the photonic integrated chip provided in the embodiments of the present invention, such as... Figure 1 As shown, the photonic integrated chip provided in this embodiment of the invention includes:

[0052] Optical modulator, optical detector, optical attenuator, optical coupler, first grating coupler, second grating coupler, and third grating coupler;

[0053] The first grating coupler is connected to the optical modulator;

[0054] The second grating coupler is connected to the optical attenuator;

[0055] The optical modulator and the optical attenuator are respectively connected to the optical coupler;

[0056] The optical coupler is connected to the photodetector and the third grating coupler, respectively.

[0057] The photonic integrated chip provided in this embodiment of the invention includes: an optical modulator, a photodetector, an optical attenuator, an optical coupler, and three grating couplers.

[0058] The optical modulator can be a Mach-Zehnder modulator (MZM), which can modulate baseband signals or millimeter-wave received signals.

[0059] The MZM mainly consists of two modulation arm waveguides, two Y-branch strip waveguides, and traveling-wave modulation electrodes. The modulation arm waveguides are ridge waveguides. By ion implanting P-type boron atoms and N-type phosphorus atoms into the intrinsic silicon core layer of these ridge waveguides, a passive-negative (PN) junction is formed at the core layer. Based on the plasma dispersion effect of this PN junction in the depletion state, changing the voltage on the traveling-wave modulation electrodes will alter the carrier concentration inside the PN junction, thereby changing the effective refractive index of the modulation arm waveguides and consequently altering the phase of the light after passing through the modulation arms.

[0060] A photodetector (PD) is mainly composed of an intrinsic Ge absorption region, a P-type silicon doped region, and an N-type silicon doped region. Together, these three regions form a passive-intrinsic-negative (PIN) structure. Its working principle is based on the light absorption effect of Ge material and the reverse built-in electric field in the PIN structure.

[0061] The optical attenuator can be a tunable optical attenuator (VOA), which mainly consists of two phase-shifting arm waveguides, two Y-branch strip waveguides, and a heating electrode located above the phase-shifting arm waveguides. Its working principle is based on the thermo-optical effect of silicon material and the interference effect of the Mach-Zehnder Interferometer (MZI) structure.

[0062] An optical coupler (OC) can be 2×2 OC, which mainly consists of two single-mode input waveguides, one multimode interference waveguide, and two single-mode output waveguides. Its working principle is based on the multimode interference effect in the multimode waveguide, and its beam splitting ratio is 50:50.

[0063] The number of grating couplers (GCs) is 3. Two GCs are used to input two local oscillator optical signals with different wavelengths, and the other GC is used to output the mixed light after passing through the 2×2 optical coupler, so as to realize performance monitoring and fiber optic extension.

[0064] For a transmitter, an optical modulator is used to modulate a baseband signal, generating an optical baseband signal; for a receiver, it is used to modulate a millimeter-wave signal, generating an optical millimeter-wave signal.

[0065] For transmitters, photodetectors are used to generate millimeter-wave signals; for receivers, they are used to demodulate baseband signals.

[0066] An optical coupler, for the transmitter, is used for 180° optical mixing of the local oscillator optical signal and the optical baseband signal; while for the receiver, it is used for 180° optical mixing of the local oscillator optical signal and the optical millimeter-wave signal.

[0067] Optical attenuators, by integrating a VOA on the chip, can adjust the carrier-to-signal power ratio (CSPR) to achieve optimal bit error rate (BER) performance.

[0068] Therefore, the photonic integrated chip provided in this embodiment of the invention can perform either a transmitting or receiving function.

[0069] Optionally, Figure 2 This is a second schematic diagram of the structure of the photonic integrated chip provided in the embodiments of the present invention, as shown below. Figure 2 As shown, the photonic integrated chip includes an optical modulator MZM, a photodetector PD, an optical attenuator VOA, a 2×2 optical coupler OC, and three grating couplers GC, namely GC1, GC2, and GC3.

[0070] GC1 and GC2 are the local oscillator (LO) input ports, and GC3 is the signal output port. The first LO signal LO1 enters the chip through GC1, and the second LO signal LO2 enters the chip through GC2. The wavelengths of the first and second LO signals are different.

[0071] The photonic integrated chip provided in this invention includes: an optical modulator, a photodetector, an optical attenuator, an optical coupler, a first grating coupler, a second grating coupler, and a third grating coupler. It can realize the function of receiving or transmitting and can be applied to both millimeter-wave transmitter front-end modules and millimeter-wave receiver front-end modules. It has a simple structure, small size, light weight, and low power consumption, which reduces equipment costs.

[0072] In some embodiments, the first grating coupler is used to input a first local oscillator signal;

[0073] The second grating coupler is used to input the second local oscillator signal;

[0074] The wavelengths of the first local oscillator signal and the second local oscillator signal are different.

[0075] The first grating coupler is used to input the first local oscillator (LOO) signal, and the second grating coupler is used to input the second LOO signal. The first LOO signal and the second LOO signal have different wavelengths, i.e., different frequencies. By performing heterodyne beat frequency analysis in the photodetector, a radio frequency signal with a frequency difference between the two signals will be generated. If the two signals have the same wavelength, a DC signal will be generated.

[0076] In some embodiments, where the photonic integrated chip is used to perform the emission function...

[0077] The optical modulator is used to modulate the baseband signal onto the first local oscillator optical signal;

[0078] The optical attenuator is used to modulate the power control signal onto the second local oscillator optical signal;

[0079] The optical coupler is used to mix the modulated first local oscillator signal and the second local oscillator signal to determine the first mixed light.

[0080] The third grating coupler is used to output the first mixing light;

[0081] The photodetector is used to generate a millimeter-wave signal based on the first mixed light.

[0082] When the photonic integrated chip performs the transmission function, the baseband signal is modulated onto LO1 via MZM, and the power control signal is applied onto LO2 via VOA.

[0083] The modulated LO1 and LO2 are optically mixed at 180° using 2×2OC to obtain the first mixed light. Part of the first mixed light enters the PD for optical heterodyne beat frequency to generate a millimeter-wave transmission signal, while the other part of the first mixed light will be output from GC3 to realize the fiber extension.

[0084] Figure 3 This is a schematic diagram illustrating the working process of the photonic integrated chip implementing the transmission function provided in an embodiment of the present invention, as shown below. Figure 3 As shown, f LO1 f represents the frequency of the first optical oscillator LO1; LO2 f represents the frequency of the second optical oscillator LO2; mmw This represents the frequency difference between LO1 and LO2, which represents the frequency of the millimeter-wave transmitted / received signal.

[0085] The process of a photonic integrated chip to achieve the transmission function includes grating coupling input of LO1 and LO2 based on GC, DSB-SC modulation of the baseband signal based on MZM, and optical heterodyne beat frequency of the mixing light based on PD.

[0086] First, LO1 enters the chip through GC1, and LO2 enters the chip through GC2.

[0087] Then, a baseband signal is modulated onto LO1 via MZM, and a power control signal is applied onto LO2 via VOA.

[0088] Finally, the modulated LO1 and LO2 are optically mixed at 180° using a 2×2OC converter. A portion of the mixed light enters the PD for optical heterodyne beat frequency generation, producing a frequency f. mmw Millimeter wave transmission signal.

[0089] Because DSB-SC modulation is used, the modulated frequency is f. LO1 The signal energy is very small, so the energy of the baseband signal generated by the modulation of the sideband signal and the optical homodyne detection of LO1 will be much lower than the energy of the millimeter wave signal generated by the modulation of the sideband signal and the optical heterodyne beat frequency detection of LO2.

[0090] Therefore, when the photonic integrated chip performs the emission function, the optical heterodyne beat frequency will dominate.

[0091] The photonic integrated chip provided in this embodiment of the invention modulates the baseband signal onto the first local oscillator optical signal using an optical modulator, modulates the power control signal onto the second local oscillator optical signal using an optical attenuator, and mixes the modulated local oscillator optical signal using an optical coupler to determine the first mixed light. The photodetector generates a millimeter-wave signal based on the first mixed light, thus realizing the transmission function. It can be applied to the front-end module of a millimeter-wave transmitter. It has a simple structure, small size, light weight, and low power consumption, which reduces the cost of equipment.

[0092] In some embodiments, where the photonic integrated chip is used to perform a receiving function...

[0093] The optical modulator is used to modulate the millimeter-wave signal onto the first local oscillator optical signal;

[0094] The optical attenuator is used to modulate the power control signal onto the second local oscillator optical signal;

[0095] The optical coupler is used to mix the modulated first local oscillator signal and the second local oscillator signal to determine the second mixed light.

[0096] The third grating coupler is used to output the second mixing light;

[0097] The photodetector is used to generate a baseband signal based on the second mixing light.

[0098] When the photonic integrated chip performs the receiving function, the millimeter-wave receiving signal is modulated onto LO1 via MZM, and the power control signal is applied onto LO2 via VOA.

[0099] The modulated LO1 and LO2 are optically mixed at 180° using 2×2OC to obtain the second mixed light. Part of the second mixed light enters the PD for optical zero-difference detection to recover the baseband signal, and the other part of the second mixed light will be output from GC3 to realize the fiber extension.

[0100] By changing the DC control voltage applied to the VOA, the optical power of LO2 can be altered, thereby optimizing the signal-to-noise ratio of the millimeter-wave transmitted signal / baseband signal after PD optical heterodyne beat frequency / optical homodyne detection.

[0101] Figure 4 This is a schematic diagram illustrating the working process of the photonic integrated chip implementing the receiving function according to an embodiment of the present invention, as shown below. Figure 4 As shown, f LO1 f represents the frequency of the first optical oscillator LO1; LO2 f represents the frequency of the first optical oscillator LO2; mmw This represents the frequency difference between LO1 and LO2, which represents the frequency of the millimeter-wave transmitted / received signal.

[0102] The working process of the photonic integrated chip to realize the receiving function includes grating coupling input of LO1 and LO2 based on GC, DSB-SC modulation of millimeter wave received signal based on MZM, and optical zero difference detection of mixed light based on PD.

[0103] First, LO1 enters the chip through GC1, and LO2 enters the chip through GC2.

[0104] Then, a frequency of f mmw The millimeter-wave received signal is modulated onto LO1 via MZM, and a power control signal is applied onto LO2 via VOA.

[0105] Finally, the modulated LO1 and LO2 are optically mixed at 180° using a 2×2OC method. A portion of the mixed light enters the PD for optical zero-difference detection to recover the baseband signal.

[0106] Because DSB-SC modulation is used, the modulated frequency is f. LO1 The signal energy is very small, and because the center frequency generated after modulation is f LO1 -f mmw The frequency difference between the sideband signal and LO2 is 2*f mmw This frequency will far exceed the amplitude-frequency response bandwidth of the PD, therefore the signal energy generated by the optical heterodyne beat frequency of the two signals in the PD will be very small. Thus, the high-frequency signal energy generated by the sideband signal and the optical heterodyne beat frequency of LO1 and LO2 will be far lower than the center frequency f generated after modulation. LO2 The energy of the baseband signal generated by optical zero-difference detection of the sideband signal and LO2.

[0107] Therefore, when the photonic integrated chip performs the receiving function, optical homodyne detection will dominate.

[0108] The photonic integrated chip provided in this embodiment of the invention modulates a millimeter-wave signal onto a first local oscillator signal using an optical modulator, modulates a power control signal onto a second local oscillator signal using an optical attenuator, mixes the modulated local oscillator signal using an optical coupler to determine a second mixed light, and generates a baseband signal based on the second mixed light using a photodetector, thus realizing the receiving function. It can be applied to the front-end module of a millimeter-wave receiver, and has a simple structure, small size, light weight, and low power consumption, thereby reducing equipment costs.

[0109] In some embodiments, the photonic integrated chip is manufactured based on SOI integrated optical path technology.

[0110] This photonic integrated chip is designed and fabricated based on silicon-on-insulation (SOI) integrated optical path technology, which is compatible with complementary metal-oxide-semiconductor (CMOS) circuit technology.

[0111] This invention also provides a millimeter-wave transmitter front-end module, comprising: the photonic integrated chip described in any of the above embodiments.

[0112] It also includes: driver amplifier chips and power amplifier chips;

[0113] The driver amplifier chip is connected to the optical modulator;

[0114] The power amplifier chip is connected to the photodetector.

[0115] Figure 5 This is a schematic diagram of the structure of the millimeter-wave transmitter front-end module provided in an embodiment of the present invention, as shown below. Figure 5 As shown, this embodiment provides a millimeter-wave transmitter front-end module, including: a photonic integrated chip, a driver amplifier (DA) chip, and a power amplifier (PA) chip.

[0116] Figure 5 In the diagram, solid lines represent optical signals, and dashed lines represent electrical signals.

[0117] First, LO1 and LO2 enter GC1 and GC2 on the photonic integrated chip through the first local oscillator input port and the second local oscillator input port of the module, respectively.

[0118] Then, a baseband signal enters the DA chip through the baseband input port of the module for amplification. After amplification, the signal enters the MZM through the first input port of the photonic integrated chip for carrier-suppressed double-sideband (DSB-SC) modulation.

[0119] Finally, the modulated LO1 and LO2 are optically mixed at 180° using 2×2OC. Part of the mixed light enters the PD for optical heterodyne beat frequency to generate millimeter-wave transmission signals, while the other part of the mixed light will be output from GC3 to achieve fiber extension.

[0120] The millimeter-wave transmission signal generated by the PD enters the PA chip for amplification through the first output port of the photonic integrated chip, and the amplified signal is output through the transmitting antenna port of the module.

[0121] The millimeter-wave transmitter front-end module provided in this embodiment of the invention includes a photonic integrated chip, a driver amplifier chip, and a power amplifier chip. The photonic integrated chip has a simple structure and can be mass-produced, reducing the production cost of the millimeter-wave transmitter front-end module. It can be applied to scenarios such as indoor distributed short-range WiFi communication, outdoor base station-side long-range mobile communication, airborne communication, and spaceborne communication.

[0122] This invention also provides a millimeter-wave receiver front-end module, comprising: the photonic integrated chip described in any of the preceding embodiments.

[0123] It also includes: transimpedance amplifier chips and low-noise amplifier chips;

[0124] The low-noise amplifier chip is connected to the optical modulator;

[0125] The transimpedance amplifier chip is connected to the photodetector.

[0126] Figure 6 This is a schematic diagram of the structure of the millimeter-wave receiver front-end module provided in an embodiment of the present invention, as shown below. Figure 6 As shown, this embodiment provides a millimeter-wave receiver front-end module, including: a photonic integrated chip, a trans-impedance amplifier (TIA) chip, and a low-noise amplifier (LNA) chip.

[0127] Figure 6 In the diagram, solid lines represent optical signals, and dashed lines represent electrical signals.

[0128] First, LO1 and LO2 enter GC1 and GC2 on the photonic integrated chip through the first local oscillator input port and the second local oscillator input port of the module, respectively.

[0129] Then, a millimeter-wave received signal enters the LNA chip through the receiving antenna port of the module for amplification. After amplification, the signal enters the MZM for DSB-SC modulation through the first input port of the photonic integrated chip.

[0130] Finally, the modulated LO1 and LO2 are optically mixed at 180° using 2×2OC. Part of the mixed light enters the PD for optical zero-difference detection to recover the baseband signal, while the other part of the mixed light will be output from GC3 to achieve fiber extension.

[0131] The baseband signal generated by the PD enters the TIA chip through the first output port of the photonic integrated chip for amplification, and the amplified signal is output through the baseband output port of the module.

[0132] The millimeter-wave receiver front-end module provided in this embodiment of the invention includes a photonic integrated chip, a transimpedance amplifier chip, and a low-noise amplifier chip. The photonic integrated chip has a simple structure and can be mass-produced, reducing the production cost of the millimeter-wave receiver front-end module. It can be applied to scenarios such as indoor distributed short-range WiFi communication, outdoor base station-side long-range mobile communication, airborne communication, and spaceborne communication.

[0133] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement this without any creative effort.

[0134] Through the above description of the embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus necessary general-purpose hardware platforms, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solutions, in essence or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute the methods described in the various embodiments or some parts of the embodiments.

[0135] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A photonic integrated chip, characterized in that, include: Optical modulator, optical detector, optical attenuator, optical coupler, first grating coupler, second grating coupler, and third grating coupler; The first grating coupler is connected to the optical modulator; The second grating coupler is connected to the optical attenuator; The optical modulator and the optical attenuator are respectively connected to the optical coupler; The optical coupler is connected to the photodetector and the third grating coupler respectively; The first grating coupler is used to input the first local oscillator optical signal; The second grating coupler is used to input the second local oscillator signal; The wavelengths of the first local oscillator signal and the second local oscillator signal are different.

2. The photonic integrated chip according to claim 1, characterized in that, include: When the photonic integrated chip is used to perform the emission function... The optical modulator is used to modulate the baseband signal onto the first local oscillator optical signal; The optical attenuator is used to modulate the power control signal onto the second local oscillator optical signal; The optical coupler is used to mix the modulated first local oscillator signal and the second local oscillator signal to determine the first mixed light. The third grating coupler is used to output the first mixing light; The photodetector is used to generate a millimeter-wave signal based on the first mixed light.

3. The photonic integrated chip according to claim 1, characterized in that, include: When the photonic integrated chip is used to perform the receiving function... The optical modulator is used to modulate the millimeter-wave signal onto the first local oscillator optical signal; The optical attenuator is used to modulate the power control signal onto the second local oscillator optical signal; The optical coupler is used to mix the modulated first local oscillator signal and the second local oscillator signal to determine the second mixed light. The third grating coupler is used to output the second mixing light; The photodetector is used to generate a baseband signal based on the second mixing light.

4. The photonic integrated chip according to any one of claims 1 to 3, characterized in that, The optical coupler includes: It has two single-mode input waveguides, one multimode interference waveguide, and two single-mode output waveguides.

5. The photonic integrated chip according to any one of claims 1 to 3, characterized in that, include: The photonic integrated chip is manufactured based on SOI integrated optical path technology.

6. A millimeter-wave transmitter front-end module, characterized in that, include: The photonic integrated chip according to any one of claims 1 to 5.

7. The millimeter-wave transmitter front-end module according to claim 6, characterized in that, Also includes: Driver amplifier chips and power amplifier chips; The driver amplifier chip is connected to the optical modulator; The power amplifier chip is connected to the photodetector.

8. A millimeter-wave receiver front-end module, characterized in that, include: The photonic integrated chip according to any one of claims 1 to 5.

9. The millimeter-wave receiver front-end module according to claim 8, characterized in that, Also includes: Transimpedance amplifier chips and low-noise amplifier chips; The low-noise amplifier chip is connected to the optical modulator; The transimpedance amplifier chip is connected to the photodetector.

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