Epitaxial growth apparatus and temperature control method thereof

By monitoring the temperature of the silicon wafer surface and substrate, as well as the power of the heating module in real time, and combining the temperature difference and power trend to determine whether there are deposits in the quartz bell jar, cleaning and thermal emissivity adjustment are carried out, solving the problem of epitaxial growth temperature control and improving the quality and production efficiency of epitaxial products.

CN117265653BActive Publication Date: 2026-06-23XIAN ESWIN MATERIAL TECHNOLOGY CO LTD +1
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Patent Information

Application Number
CN202311279076.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-09-28
Publication Date
2026-06-23
Estimated Expiration
2043-09-28

AI Technical Summary

Technical Problem

Existing technologies cannot effectively control temperature changes during epitaxial growth, leading to variations in parameters such as the flatness and resistivity of the epitaxial layer, which affects product quality.

Method used

The temperature and power measurement components monitor the silicon wafer surface temperature, base temperature, and heating module power in real time. The temperature difference and power trend are combined to determine whether to perform a cleaning step, clean the quartz bell jar, and adjust the thermal emissivity of the heating module to control the temperature.

Benefits of technology

It enables precise control of epitaxial growth temperature, avoids unnecessary downtime for cavity opening, improves production efficiency, and ensures the quality of epitaxial products.

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Abstract

The application provides an epitaxial growth device and a temperature control method thereof, and belongs to the technical field of semiconductor manufacturing. The epitaxial growth device comprises: an upper quartz bell jar and a lower quartz bell jar, the upper quartz bell jar and the lower quartz bell jar are arranged to form a reaction chamber; a susceptor for placing a silicon wafer in the reaction chamber; a heating module in the reaction chamber, the heating module comprises an upper heating module arranged above the susceptor and a lower heating module arranged below the susceptor; a temperature measurement assembly for obtaining the temperature of the upper surface of the silicon wafer and the temperature of the susceptor; a power measurement assembly for obtaining the power of the heating module; and a control unit for judging whether to perform a cleaning step according to the temperature of the upper surface of the silicon wafer, the temperature of the susceptor and the power of the heating module, and cleaning the upper quartz bell jar and / or the lower quartz bell jar. The technical scheme of the application can control the temperature of epitaxial growth and ensure the quality of epitaxial products.
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