P-Type Gallium Oxide and Preparation Method Thereof

Abstract

This application relates to a P-type gallium oxide and a preparation method thereof. The preparation method of the P-type gallium oxide includes providing a substrate, the material of the substrate includes β-gallium oxide, and a co-doping of shallow-level acceptor impurities and deep-level acceptor impurities is formed on the substrate. Among them, the shallow-level acceptor impurities are elements of the same group as oxygen. When the deep-level acceptor impurities and the shallow-level acceptor impurities are co-doped, the deep-level acceptors of the deep-level acceptor impurities can combine with the acceptor levels of the shallow-level acceptor impurities, further pushing the Fermi level towards the valence band top. This combined effect significantly improves the stability of P-type conductivity of β-gallium oxide.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and particularly to a P-type gallium oxide and a method for preparing the P-type gallium oxide. Background Art

[0002] β-Gallium oxide (β-Ga2O3) has a wider bandgap, a higher breakdown field strength, and can grow high-quality large-size single crystals. These characteristics make β-Ga2O3 have a very broad application prospect in high-power devices. However, due to the relatively flat valence band, large effective mass, easy formation of self-trapped holes and self-compensation effect of β-gallium oxide (β-Ga2O3), it is difficult to achieve stable P-type doping of β-gallium oxide (β-Ga2O3), thereby limiting its application in actual devices. Summary of the Invention

[0003] Based on this, it is necessary to provide a P-type gallium oxide and a method for preparing the P-type gallium oxide to solve the problem that it is difficult to achieve stable P-type doping of β-gallium oxide (β-Ga2O3), thereby limiting its application in actual devices.

[0004] According to the first aspect of the present application, a method for preparing a P-type gallium oxide is provided, including:

[0005] Providing a substrate, the material of the substrate includes β-gallium oxide;

[0006] Forming a co-doping of shallow-level acceptor impurities and deep-level acceptor impurities on the substrate;

[0007] Wherein, the shallow-level acceptor impurity and oxygen are elements of the same group.

[0008] In one embodiment, the shallow-level acceptor impurity is selenium, sulfur or tellurium.

[0009] In one embodiment, the deep-level acceptor impurity is magnesium, beryllium or calcium.

[0010] In one embodiment, the forming a co-doping of shallow-level acceptor impurities and deep-level acceptor impurities on the substrate specifically includes: forming a co-doping of shallow-level acceptor impurities and deep-level acceptor impurities on the substrate by ion implantation;

[0011] The ion implantation dose of the shallow-level acceptor impurity is a, and the ion implantation dose of the deep-level acceptor impurity is b. The ratio of a to b is 0.9-1.1.

[0012] In one embodiment, the ion implantation dose of the shallow-level acceptor impurity is 1×10 16 ions / cm 2 ~1×10 17ions / cm 2 The ion implantation dose of the deep-level acceptor impurity is 1×10 16 ions / cm 2 ~1×10 17 ions / cm 2 .

[0013] In one embodiment, the ion implantation energy of the shallow-level acceptor impurity is 10 kV - 200 kV;

[0014] The ion implantation energy of the deep-level acceptor impurity is 10 kV - 200 kV.

[0015] In one embodiment, the ion implantation energy of the shallow-level acceptor impurity is c kV, the ion implantation energy of the deep-level acceptor impurity is d kV, and the ratio of c to d is 2 - 3.

[0016] In one embodiment, the method for preparing the P-type gallium oxide further includes: annealing the substrate in an oxygen environment to activate the shallow-level acceptor impurity and the deep-level acceptor impurity.

[0017] In one embodiment, in the annealing process of annealing the substrate to activate the shallow-level acceptor impurity and the deep-level acceptor impurity, the annealing time is 1 min - 5 min, and the annealing temperature is 500°C - 900°C.

[0018] According to the second aspect of the present application, there is provided a P-type gallium oxide prepared by using the preparation method of the P-type gallium oxide in any of the above embodiments.

[0019] In the technical solution of the present application, when the shallow-level acceptor impurity is incorporated into the lattice of β-Ga2O3, acceptor levels are introduced near the top of the valence band. Considering that the shallow-level acceptor impurity and oxygen are elements of the same group, these acceptor levels are mainly composed of the 4s orbitals of the shallow-level acceptor impurity, which can effectively approach the valence band top, thereby lowering the Fermi level and making it closer to the valence band top, which provides potential acceptor levels for the P-type conduction of the substrate. In addition, deep-level acceptor impurities are also incorporated into the substrate to form deep-level acceptor defects. Although a single deep-level acceptor impurity may not be sufficient to form stable P-type conduction, when the deep-level acceptor impurity and the shallow-level acceptor impurity are co-doped, the deep-level acceptor of the deep-level acceptor impurity can combine with the acceptor level of the shallow-level acceptor impurity to further push the Fermi level towards the valence band top, and this combination effect significantly improves the stability of P-type conduction of β-gallium oxide. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1A comparison table of doping concentrations and electrical properties of shallow-level acceptor impurities and deep-level acceptor impurities at different ion implantation doses is shown.

[0021] Figures 2 - 5 Secondary ion mass spectrometry diagrams of shallow-level acceptor impurities and deep-level acceptor impurities at different ion implantation doses are shown.

[0022] Figure 6 Simulated curves showing the doping concentration of shallow-level acceptor impurities versus the doping depth of shallow-level acceptor impurities and simulated curves representing the doping concentration of deep-level acceptor impurities versus the doping depth of deep-level acceptor impurities are shown.

[0023] Figure 7 Current-voltage change curves of a blank sample and the P-type gallium oxide of the present application are shown.

[0024] Figure 8 A comparison table of the electrical properties of a blank sample and P-type gallium oxide is shown. Detailed Description of the Invention

[0025] To make the above objects, features, and advantages of the present application more apparent and understandable, the following provides a detailed description of the specific embodiments of the present application with reference to the accompanying drawings. Many specific details are set forth in the following description to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0026] In the description of the present application, it should be understood that if terms such as "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or positional relationship indicated by these terms is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present application.

[0027] In addition, if terms such as "first" and "second" appear, these terms are only for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise specifically and clearly defined.

[0028] In this application, unless otherwise clearly specified and defined, if terms such as "installed", "connected", "joined", "fixed", etc. appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components or the interaction relationship between two components, unless otherwise clearly defined. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0029] In this application, unless otherwise clearly specified and defined, if there is a description such as the first feature being "on" or "under" the second feature, its meaning can be that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "over", and "on top of" the second feature can mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is at a higher horizontal level than the second feature. The first feature being "under", "beneath", and "underneath" the second feature can be that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is at a lower horizontal level than the second feature.

[0030] It should be noted that if an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there can also be an intermediate element. If an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. If so, the terms "vertical", "horizontal", "up", "down", "left", "right", and similar expressions used in this application are only for the purpose of illustration and do not represent the only implementation.

[0031] An embodiment of this application provides a method for preparing P-type gallium oxide, including the following steps:

[0032] S10. Provide a substrate, and the material of the substrate includes β-gallium oxide.

[0033] Specifically, the substrate can select an undoped β-gallium oxide (β-Ga2O3) single crystal as the base material, and the length and width dimensions of the substrate are 10×10 mm 2 , the thickness of the substrate is 0.5 mm, and the substrate can be prepared by the edge-defined film-fed growth (EFG) method.

[0034] S20. Form a co-doping of shallow-level acceptor impurities and deep-level acceptor impurities on the substrate. The shallow-level acceptor impurities are elements of the same group as oxygen. The shallow-level acceptor impurities are used to introduce acceptor energy levels into the substrate, and the deep-level acceptor impurities are used to introduce deep-level acceptor defects into the substrate.

[0035] Co-doping of shallow-level acceptor impurities and deep-level acceptor impurities can be formed on the substrate by ion implantation, or co-doping of shallow-level acceptor impurities and deep-level acceptor impurities can be formed by epitaxial growth, such as growing gallium oxide selenide and gallium oxide magnesium by molecular beam epitaxy (MBE) or vapor phase epitaxy (VPE).

[0036] In terms of the properties of gallium oxide itself, the valence band of gallium oxide is flat, the dispersion at the top is small, the effective mass is large, and the density of states is large, which easily leads to free holes being trapped by local lattice distortion to form self-trapped holes. Therefore, it is difficult to form P-type doping. When shallow-level acceptor impurities are incorporated into the lattice of β-Ga2O3, acceptor levels are introduced near the top of the valence band. Considering that the shallow-level acceptor impurities and oxygen are elements of the same group, these acceptor levels are mainly composed of the 4s orbitals of the shallow-level acceptor impurities, which can effectively approach the valence band top, thereby lowering the Fermi level and making it closer to the valence band top, which provides potential acceptor levels for the P-type conduction of the substrate. In addition, deep-level acceptor impurities are also incorporated into the substrate to form deep-level acceptor defects. Although a single deep-level acceptor impurity may not be sufficient to form stable P-type conduction, when deep-level acceptor impurities and shallow-level acceptor impurities are co-doped, the deep-level acceptors of the deep-level acceptor impurities can combine with the acceptor levels of the shallow-level acceptor impurities to further push the Fermi level towards the valence band top. This combined effect significantly improves the stability of P-type conduction in β-gallium oxide.

[0037] In some embodiments, the shallow-level acceptor impurities are selenium, sulfur, or tellurium.

[0038] Selenium, sulfur, and tellurium are all elements of the same group as oxygen. Therefore, when shallow-level acceptor impurities are incorporated into the lattice of β-Ga2O3, acceptor levels are introduced near the top of the valence band. These acceptor levels are mainly composed of the 4s orbitals of selenium ions, sulfur ions, or tellurium ions, which can effectively approach the valence band top, thereby lowering the Fermi level and making it closer to the valence band top, which provides potential acceptor levels for the P-type conduction of the substrate.

[0039] In some embodiments, the deep-level acceptor impurities are magnesium, beryllium, or calcium.

[0040] Magnesium ions, beryllium ions, or calcium ions can all form deep-level acceptor defects. And when deep-level acceptor impurities and shallow-level acceptor impurities are co-doped, the deep-level acceptors of the deep-level acceptor impurities can combine with the acceptor levels of the shallow-level acceptor impurities to further push the Fermi level towards the valence band top. This combined effect significantly improves the stability of P-type conduction in β-gallium oxide.

[0041] In some embodiments, co-doping of shallow-level acceptor impurities and deep-level acceptor impurities is formed on a substrate, specifically including: forming co-doping of shallow-level acceptor impurities and deep-level acceptor impurities on the substrate by ion implantation. Among them, the ion implantation dose of the shallow-level acceptor impurities is a, and the ion implantation dose of the deep-level acceptor impurities is b, and the ratio of a to b is 0.9 - 1.1.

[0042] Exemplarily, the ratio of a to b is 0.9, 1 or 1.1.

[0043] That is to say, the ion implantation dose of the shallow-level acceptor impurities tends to be equal to the ion implantation dose of the deep-level acceptor impurities, which is beneficial to improving the uniformity of co-doping, enabling the deep-level acceptor of the shallow-level acceptor impurities to better combine with the acceptor energy level of the shallow-level acceptor impurities, and further better enhancing the stability of p-type conductivity of β-gallium oxide.

[0044] In some embodiments, the ion implantation dose of the shallow-level acceptor impurities is 1×10 16 ions / cm 2 ~1×10 17 ions / cm 2 , and the ion implantation dose of the deep-level acceptor impurities is 1×10 16 ions / cm 2 ~1×10 17 ions / cm 2 .

[0045] Exemplarily, the ion implantation dose of the shallow-level acceptor impurities is 1×10 16 ions / cm 2 , 5×10 16 ions / cm 2 or 1×10 17 ions / cm 2 .

[0046] Exemplarily, the ion implantation dose of the deep-level acceptor impurities is 1×10 16 ions / cm 2 , 5×10 16 ions / cm 2 or 1×10 17 ions / cm 2 .

[0047] Please refer to Figures 1 - 5 , Figure 1 for a comparison table of doping peak concentrations and electrical properties and other parameters of shallow-level acceptor impurities and deep-level acceptor impurities at different ion implantation doses, Figures 2 - 5 for secondary ion mass spectrometry diagrams of shallow-level acceptor impurities and deep-level acceptor impurities at different ion implantation doses.

[0048] Figures 2 - 5 Among them, the shallow-level acceptor impurity is selected as selenium, and the deep-level acceptor impurity is selected as magnesium. Figure 2 Among them, L11 and L12 respectively represent the curves of the doping concentration of the shallow-level acceptor impurity varying with the doping depth of the shallow-level acceptor impurity and the curves of the doping concentration of the deep-level acceptor impurity varying with the doping depth of the deep-level acceptor impurity when the ion implantation doses of the shallow-level acceptor impurity and the deep-level acceptor impurity are both 1×10 15 ions / cm 2 Figure 3 Among them, L21 and L22 respectively represent the curves of the doping concentration of the shallow-level acceptor impurity varying with the doping depth of the shallow-level acceptor impurity and the curves of the doping concentration of the deep-level acceptor impurity varying with the doping depth of the deep-level acceptor impurity when the ion implantation doses of the shallow-level acceptor impurity and the deep-level acceptor impurity are both 1×10 16 ions / cm 2 Figure 4 Among them, L31 and L32 respectively represent the curves of the doping concentration of the shallow-level acceptor impurity varying with the doping depth of the shallow-level acceptor impurity and the curves of the doping concentration of the deep-level acceptor impurity varying with the doping depth of the deep-level acceptor impurity when the ion implantation doses of the shallow-level acceptor impurity and the deep-level acceptor impurity are both 5×10 16 ions / cm 2 Figure 4 Among them, L41 and L42 respectively represent the curves of the doping concentration of the shallow-level acceptor impurity varying with the doping depth of the shallow-level acceptor impurity and the curves of the doping concentration of the deep-level acceptor impurity varying with the doping depth of the deep-level acceptor impurity when the ion implantation doses of the shallow-level acceptor impurity and the deep-level acceptor impurity are both 1×10 17 ions / cm 2

[0049] From Figures 1 - 5 it can be seen that when the substrate is undoped and the ion implantation doses of the shallow-level acceptor impurity and the deep-level acceptor impurity are both 1×10 15 ions / cm 2 the electrical properties of gallium oxide are poor. When the ion implantation dose of the shallow-level acceptor impurity is selected as 1×10 16 ions / cm 2 ~1×10 17 ions / cm 2 and the ion implantation dose of the deep-level acceptor impurity is selected as 1×10 16 ions / cm 2~1×10 17 ions / cm 2 When it is ~1×10 17 ions / cm 2 , the electrical properties of the p-type gallium oxide prepared by the method for preparing p-type gallium oxide of the present application are better.

[0050] Of course, the SRIM software can also be used to simulate the doping situation of shallow-level acceptor impurities, so that appropriate ion implantation doses can be selected for both shallow-level acceptor impurities and deep-level acceptor impurities.

[0051] In some embodiments, the ion implantation energy of the shallow-level acceptor impurity is 10 kv - 200 kv, and the ion implantation energy of the deep-level acceptor impurity is 10 kv - 200 kv.

[0052] Exemplarily, the ion implantation energy of the shallow-level acceptor impurity is 10 kv, 50 kv, 60 kv, 90 kv, 100 kv, 150 kv or 200 kv. Exemplarily, the ion implantation energy of the deep-level acceptor impurity is 10 kv, 20 kv, 30 kv, 40 kv, 50 kv, 60 kv, 70 kv, 80 kv, 90 kv, 100 kv, 120 kv, 140 kv, 160 kv, 180 kv or 200 kv.

[0053] In this way, selecting the ion implantation energies of the shallow-level acceptor impurity and the deep-level acceptor impurity within a suitable range is beneficial to implanting the shallow-level acceptor impurity and the deep-level acceptor impurity to a preset depth in the substrate, and further beneficial to optimizing the doping positions of the shallow-level acceptor impurity and the deep-level acceptor impurity, and improving the uniformity and effectiveness of the doping of the shallow-level acceptor impurity and the deep-level acceptor impurity.

[0054] In some embodiments, the ion implantation energy of the shallow-level acceptor impurity is c kv, the ion implantation energy of the deep-level acceptor impurity is d kv, and the ratio of c to d is 2 - 3.

[0055] Exemplarily, the ratio of c to d is 2, 2.5 or 3.

[0056] For example, the ion implantation energy of the shallow-level acceptor impurity is 50 kv, and the ion implantation energy of the deep-level acceptor impurity is 20 kv; for another example, the ion implantation energy of the shallow-level acceptor impurity is 60 kv, and the ion implantation energy of the deep-level acceptor impurity is 30 kv; for another example, the ion implantation energy of the shallow-level acceptor impurity is 90 kv, and the ion implantation energy of the deep-level acceptor impurity is 30 kv.

[0057] When the atomic mass corresponding to the shallow-level acceptor impurity is greater than the atomic mass corresponding to the deep-level acceptor impurity, setting the ratio of c to d to be 2 - 3 is beneficial for the shallow-level acceptor impurity and the deep-level acceptor impurity to be approximately at the same preset depth in the substrate. Furthermore, it is conducive to better improving the uniformity and effectiveness of the co-doping of the shallow-level acceptor impurity and the deep-level acceptor impurity, enabling the deep-level acceptor of the shallow-level acceptor impurity to better combine with the acceptor level of the shallow-level acceptor impurity, and thus better enhancing the stability of P-type conduction of β-gallium oxide.

[0058] In some embodiments, the ratio of c to d is selected as an appropriate ratio using SRIM software, such as being selected as 2 - 3.

[0059] As Figure 6 shown, an example with a ratio of c to d of 2 is given. Among them, the shallow-level acceptor impurity is selected as selenium, the deep-level acceptor impurity is selected as magnesium, the ion implantation energy of the shallow-level acceptor impurity is 50 kv, and the ion implantation energy of the deep-level acceptor impurity is 20 kv. Figure 6 In [the figure], L51 represents the simulation curve of the doping concentration of the shallow-level acceptor impurity versus the doping depth of the shallow-level acceptor impurity, and L52 represents the simulation curve of the doping concentration of the deep-level acceptor impurity versus the doping depth of the deep-level acceptor impurity. It can be seen from Figure 6 this that the peak doping concentration of the shallow-level acceptor impurity and the peak doping concentration of the deep-level acceptor impurity can approximately correspond to the same doping depth, about 200 angstroms. This shows that by limiting the ratio of c to d, the shallow-level acceptor impurity and the deep-level acceptor impurity can be approximately at the same preset depth in the substrate, which is conducive to better improving the uniformity and effectiveness of the co-doping of the shallow-level acceptor impurity and the deep-level acceptor impurity, and further better enhancing the stability of P-type conduction of β-gallium oxide.

[0060] In some embodiments, the method for preparing P-type gallium oxide further includes: S30. Annealing the substrate in an oxygen environment to activate the shallow-level acceptor impurity and the deep-level acceptor impurity.

[0061] In step S30, the annealing time is 1 min - 5 min, and the annealing temperature is 500 °C - 900 °C.

[0062] Exemplarily, the annealing time is 1 min, 2 min, 3 min, 4 min, or 5 min, and the annealing temperature is 500 °C, 600 °C, 700 °C, 800 °C, or 900 °C.

[0063] Exemplarily, step S30 includes: performing rapid annealing in an oxygen environment at 850 °C to repair the lattice damage generated during the ion implantation process and activate the doping elements.

[0064] In this way, the lattice damage generated during the ion implantation process can be well repaired, oxygen vacancies and other defects are reduced, and shallow-level acceptor impurities and deep-level acceptor impurities are well activated, improving the electrical properties of the material.

[0065] After obtaining P-type gallium oxide by using the preparation method of P-type gallium oxide of the present application, a metal contact layer such as titanium and / or gold (exemplarily, the thickness of titanium is 20 nm and the thickness of gold is 80 nm) can be deposited on the P-type gallium oxide, and rapid thermal annealing is carried out in a nitrogen environment at 470 °C; and the conduction type and electrical properties of the P-type gallium oxide are evaluated by the Van der Pauw method.

[0066] As Figure 7 shown, the current-voltage change curves of the blank sample (the blank sample is undoped gallium oxide) and the P-type gallium oxide of the present application are given. From this, it can be known that the ion implantation dose of the shallow-level acceptor impurity is 1×10 16 ions / cm 2 and the ion implantation dose of the deep-level acceptor impurity is 1×10 16 ions / cm 2 When, the P-type gallium oxide exhibits P-type conductive characteristics.

[0067] It is measured by the Van der Pauw method that the ion implantation dose of the shallow-level acceptor impurity is 1×10 16 ions / cm 2 and the ion implantation dose of the deep-level acceptor impurity is 1×10 16 ions / cm 2 When, the carrier concentration of the P-type gallium oxide is 2.55×10 16 cm -3 and the Hall coefficient is 2.45×10 3 The resistivity is about 5731 Ω·cm. It can be seen that the electrical properties of the P-type gallium oxide of the present application are significantly better than those of the blank sample (undoped gallium oxide).

[0068] In summary, for the method for preparing p-type gallium oxide of the present application, selecting the ratio of the ion implantation dose of shallow-level acceptor impurities to the ion implantation dose of deep-level acceptor impurities to be 0.9 - 1.1 is beneficial to improving the co-doping uniformity, and thus achieving a better p-type doping effect. And selecting the ratio of the ion implantation energy of shallow-level acceptor impurities to the ion implantation energy of deep-level acceptor impurities to be 2 - 3 is beneficial for the shallow-level acceptor impurities and the deep-level acceptor impurities to reach approximately the same preset depth in the substrate. In this way, the doping positions and concentrations of the shallow-level acceptor impurities and the deep-level acceptor impurities can be optimized, the introduction of defects can be reasonably controlled, the adverse effects of unnecessary defects on the electrical conductivity of the material can be reduced, the co-doping uniformity and effectiveness can also be improved, which is further beneficial to regulating the electronic structure of β-gallium oxide (β-Ga2O3) and enhancing the p-type conductivity of β-Ga2O3, providing new possibilities for the development of high-performance semiconductor devices.

[0069] After co-doping, annealing treatment can well repair the lattice damage generated during the ion implantation process, reduce oxygen vacancies and other defects, and well activate the shallow-level acceptor impurities and the deep-level acceptor impurities, improving the electrical properties of the material.

[0070] An embodiment of the present application also discloses a p-type gallium oxide prepared by using the method for preparing p-type gallium oxide according to any one of the above embodiments.

[0071] The technical features of the above embodiments can be combined arbitrarily. For the sake of concise description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this specification.

[0072] The above embodiments only represent several implementation manners of the present application. The description is relatively specific and detailed, but it should not be understood as a limitation on the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several deformations and improvements can be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.

Claims

1. A method for preparing P-type gallium oxide, characterized in that: include: Providing a substrate, wherein the material of the substrate includes β-gallium oxide; forming a co-doping of shallow energy level acceptor impurities and deep energy level acceptor impurities on the substrate; Wherein, the shallow energy level acceptor impurity and oxygen are elements of the same group; The forming of co-doping of shallow energy level acceptor impurities and deep energy level acceptor impurities on the substrate specifically includes: forming co-doping of shallow energy level acceptor impurities and deep energy level acceptor impurities on the substrate by ion implantation; The ion implantation energy of the shallow energy level acceptor impurity is ckv, the ion implantation energy of the deep energy level acceptor impurity is dkv, the ratio of c to d is 2-3, and the shallow energy level acceptor impurity and the deep energy level acceptor impurity reach approximately the same preset depth in the substrate.

2. The method for preparing P-type gallium oxide according to claim 1, characterized in that: The shallow energy level acceptor impurities are selenium, sulfur or tellurium.

3. The method for preparing P-type gallium oxide according to claim 1, characterized in that: The deep energy level acceptor impurities are magnesium, beryllium or calcium.

4. The method for preparing P-type gallium oxide according to claim 1, characterized in that: The ion implantation dosage of the shallow energy level acceptor impurity is a, the ion implantation dosage of the deep energy level acceptor impurity is b, and the ratio of a to b is 0.9-1.

1.

5. The method for preparing P-type gallium oxide according to claim 4, characterized in that: The ion implantation dose of the shallow level acceptor impurity is 1×10 16 ions / cm 2 ~1×10 17 ions / cm 2 The ion implantation dose of the deep level acceptor impurity is 1×10 16 ions / cm 2 ~1×10 17 ions / cm 2 .

6. The method for preparing P-type gallium oxide according to claim 4, characterized in that: The ion implantation energy of the shallow energy level acceptor impurity is 10kv-200kv; The ion implantation energy of the deep energy level acceptor impurities is 10 kV-200 kV.

7. The method for preparing P-type gallium oxide according to claim 6, characterized in that: The shallow level acceptor impurities and the deep level acceptor impurities reach approximately the same predetermined depth in the substrate.

8. The method for preparing P-type gallium oxide according to claim 4, characterized in that: The method for preparing the P-type gallium oxide further includes: annealing the substrate in an oxygen environment to activate the shallow energy level acceptor impurities and the deep energy level acceptor impurities.

9. The method for preparing P-type gallium oxide according to claim 8, characterized in that: In the annealing process of annealing the substrate to activate the shallow energy level acceptor impurities and the deep energy level acceptor impurities, the annealing time is 1 min-5 min and the annealing temperature is 500° C.-900° C.

10. A P-type gallium oxide, characterized in that: The P-type gallium oxide is prepared by the preparation method of any one of claims 1 to 9.

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