Preparation method of perovskite solar cell and perovskite solar cell
Perovskite solar cells are gradually prepared through vacuum thermal evaporation and magnetron sputtering technology, solving the problem of toxic solvent release in solution treatment, and achieving efficient photoelectric conversion efficiency and environmentally friendly perovskite solar cell preparation.
Patent Information
- Application Number
- CN202411254046.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-06
- Publication Date
- 2024-12-13
AI Technical Summary
In the existing perovskite solar cell preparation methods, solution treatment leads to evaporation of toxic solvents, endangers the health of operators and pollutes the environment, and makes it difficult to achieve efficient photoelectric conversion efficiency.
Using vacuum thermal evaporation technology and magnetron sputtering technology, the perovskite solar cells are gradually prepared, including preparing conductive films on the substrate, deposition and annealing of perovskite precursor materials, forming an absorption layer, and preparing and transporting them on the surfaces of each layer. layer and back plate to avoid the release of harmful substances.
Perovskite solar cell preparation with high efficiency photoelectric conversion efficiency avoids pollution and health hazards of harmful substances during the preparation process, and improves material utilization and film quality.
Smart Images
Figure CN119136625A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of perovskite solar cells, and in particular to a method for preparing a perovskite solar cell and a perovskite solar cell. Background Art
[0002] Flexible photovoltaic cells have the advantages of light weight, continuous roll-to-roll processability, easy processing, easy storage, handling, transportation and installation, and have great potential application value in many emerging fields such as wearable electronics, portable chargers, remote power supplies, automobiles, flying objects, etc.
[0003] At present, the industry generally prefers to use solution processing methods to prepare perovskite solar cells. This method is simple and flexible in operation. By formulating a specific solution system, researchers can easily and evenly coat the perovskite material on the substrate to form the desired thin film structure. This process not only simplifies the production process, but also reduces the requirements for equipment complexity, making large-scale production possible. However, in order to obtain good solubility and film-forming properties, solution processing materials often cannot completely avoid the use of certain toxic solvents. These solvents may evaporate during the preparation process, posing a potential threat to the health of operators and may also cause pollution to the environment. Summary of the invention
[0004] According to one aspect of the present application, a method for preparing a perovskite solar cell is provided, comprising the following steps: step one, preparing a conductive film on a substrate; step two, preparing a first transmission layer on the conductive film by magnetron sputtering technology or vacuum thermal evaporation technology; step three, depositing a perovskite precursor material on the first transmission layer by vacuum thermal evaporation technology; step four, heating and annealing the sample deposited with the perovskite precursor material to form a perovskite absorption layer; step five, preparing a second transmission layer on the surface of the perovskite absorption layer by vacuum thermal evaporation technology; step six, preparing a back plate on the surface of the second transmission layer by vacuum thermal evaporation technology or magnetron sputtering technology.
[0005] In a possible implementation manner, the substrate is a rigid material or a flexible material.
[0006] In a possible implementation, the conductive film is composed of a stack of one or more materials selected from the group consisting of FTO, ITO, AZO, IWO, nanometal grid, nanosilver wire, and ITO / Ag / ITO.
[0007] In one possible implementation, the first transport layer is an electron transport layer or a hole transport layer; when the first transport layer is an electron transport layer and the electron transport layer material is an organic matter, it is prepared using vacuum thermal evaporation technology, wherein the material used is an aromatic compound with a large conjugated plane; when the first transport layer is an electron transport layer and the electron transport layer material is an inorganic matter, it is prepared using magnetron sputtering technology or vacuum thermal evaporation technology, wherein the material used is a transition metal oxide; when the first transport layer is a hole transport layer and the hole transport layer material is an organic matter, wherein the material used is a triarylamine derivative; when the first transport layer is a hole transport layer and the hole transport layer material is an inorganic matter, wherein the material used includes at least GaP, NiO, CoO, MoO x , WO x , VO x Cr 2 O 3 And a Cu-containing compound.
[0008] In a possible implementation, the perovskite precursor material includes at least one of lead iodide, lead chloride, lead bromide, cesium iodide, cesium bromide, cesium chloride and FAI material.
[0009] In one possible implementation, the perovskite precursor material is alternately deposited for one or more cycles and then annealed to form a perovskite absorption layer.
[0010] In a possible implementation, both step 2 and step 3 are processed in a vacuum environment, and the vacuum degree of the vacuum environment is higher than 10 -3 Pa.
[0011] In one possible implementation, the second transport layer is an electron blocking layer or a hole transport layer; when the second transport layer is an electron blocking layer and the electron transport layer material is an organic substance, it is prepared using vacuum thermal evaporation technology, wherein the material used is an aromatic compound with a large conjugated plane; when the second transport layer is an electron blocking layer and the electron transport layer material is an inorganic substance, it is prepared using vacuum thermal evaporation technology, wherein the material used is a transition metal oxide; when the second transport layer is a hole transport layer and the hole transport layer material is an organic substance, wherein the material used is a triarylamine derivative; when the first transport layer is a hole transport layer and the hole transport layer material is an inorganic substance, wherein the material used includes at least GaP, NiO, CoO, MoO x , WO x , VO x Cr 2 O 3 And a Cu-containing compound.
[0012] In one possible implementation, the back plate is made of gold, silver or copper.
[0013] According to another aspect of the present application, a perovskite solar cell is provided, which is prepared by the method for preparing a perovskite solar cell described in any of the above items, and includes: a substrate, a conductive film, a first transmission layer, a perovskite precursor material, a second transmission layer and a back electrode plate arranged in sequence from bottom to top.
[0014] The beneficial effects of the present application are as follows: a perovskite solar cell is prepared through six steps, wherein the first step is to prepare a conductive film on a substrate; the second step is to prepare a first transmission layer on the conductive film by magnetron sputtering technology or vacuum thermal evaporation technology; the third step is to deposit a perovskite precursor material on the first transmission layer by vacuum thermal evaporation technology; the fourth step is to heat and anneal the sample deposited with the perovskite precursor material to form a perovskite absorption layer; the fifth step is to prepare a second transmission layer on the surface of the perovskite absorption layer by vacuum thermal evaporation technology; the sixth step is to prepare a back plate on the surface of the second transmission layer by vacuum thermal evaporation technology or magnetron sputtering technology. The perovskite solar cell prepared in the present application can achieve high photoelectric conversion efficiency while preventing the generation of harmful substances that pollute the environment during the preparation process and even affect the health of operators.
[0015] Other features and aspects of the present application will become apparent from the following detailed description of exemplary embodiments with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate exemplary embodiments, features, and aspects of the present application and, together with the description, serve to explain the principles of the present application.
[0017] Figure 1 A structural diagram of a perovskite solar cell according to an embodiment of the present application is shown. DETAILED DESCRIPTION
[0018] Various exemplary embodiments, features and aspects of the present application will be described in detail below with reference to the accompanying drawings. The same reference numerals in the accompanying drawings represent elements with the same or similar functions. Although various aspects of the embodiments are shown in the accompanying drawings, the drawings are not necessarily drawn to scale unless otherwise specified.
[0019] Among them, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application or simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.
[0020] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.
[0021] The word “exemplary” is used exclusively herein to mean “serving as an example, example, or illustration.” Any embodiment described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other embodiments.
[0022] In addition, in order to better illustrate the present application, numerous specific details are given in the following specific embodiments. It should be understood by those skilled in the art that the present application can also be implemented without certain specific details. In some examples, methods, means, components and circuits well known to those skilled in the art are not described in detail in order to highlight the subject matter of the present application.
[0023] A method for preparing a perovskite solar cell comprises the following steps:
[0024] Step 1, preparing a conductive film on a substrate;
[0025] Preparation of transparent conductive films (TCO).
[0026] A transparent conductive film (TCO) is prepared on a flexible or rigid substrate by chemical vapor deposition, sputtering or coating. The substrate is made of one of stainless steel, glass, airship skin material, PET, and PI material. The material of the conductive film (TCO) can be selected from one of FTO, ITO, AZO, IWO, nanometal mesh, nanosilver wire, ITO / Ag / ITO, or a stack of two or more materials. When two materials are stacked, a stacking method of nanometal mesh + ITO or nanosilver wire + ITO can be used to optimize the photoelectric performance and mechanical strength. ITO is widely used due to its high transmittance, low resistivity, and good stability.
[0027] Step 2: preparing a first transmission layer on the conductive film by magnetron sputtering technology or vacuum thermal evaporation technology;
[0028] Preparation of electron transport layer (nip structure) or hole transport layer (pin structure).
[0029] The substrate with the conductive film (TCO) deposited is placed in a vacuum device, and the electron transport layer or the hole transport layer is prepared according to the battery design requirements using magnetron sputtering technology or vacuum thermal evaporation technology. When it is a nip structure, the electron transport layer is prepared first; when it is a pin structure, the hole transport layer is prepared first.
[0030] Electron transport layer materials: If it is an organic material, aromatic compounds with large conjugated planes such as C60, PhIm, BCP, AIQ, TAZ, PBD, Beq2, DPVBi, etc. can be selected; if it is an inorganic material, transition metal oxides such as LiF, MgF, TiOx, SnOx, etc. can be used. By precisely controlling the evaporation rate and deposition thickness, the electron transport layer can be ensured to have good electron mobility and stability.
[0031] Hole transport layer materials: If it is organic, triarylamine derivatives such as spiro-MeTAD, spiro-TTB, TaTm, F6-TCNNQ, PTAA, PEDOT-PSS, TPD, NPD can be used; if it is inorganic, GaP, NiO, CoO, MoO x , WO x , VO x Cr 2 O 3 Or a compound containing Cu. Similarly, by optimizing the evaporation parameters and deposition process, it is ensured that the hole transport layer has efficient hole transport capability and good interface contact.
[0032] Step three, depositing the perovskite precursor material on the first transport layer by vacuum thermal evaporation technology;
[0033] Preparation of perovskite layer. Under vacuum conditions, FAI, lead iodide, lead chloride, lead bromide, cesium iodide, cesium bromide, cesium chloride and other perovskite precursor materials are alternately deposited on the electron transport layer (nip structure) or the hole transport layer (pin structure) using vacuum thermal evaporation technology. By precisely controlling the evaporation rate and deposition time of each material, the alternating deposition of the multilayer structure is achieved. If necessary, multiple cycles of deposition can be repeated to optimize the thickness and component distribution of the perovskite layer.
[0034] Step 4, heating and annealing the sample on which the perovskite precursor material is deposited to form a perovskite absorption layer;
[0035] Annealing treatment: Place the sample after depositing the precursor material in an annealing furnace and perform heating annealing treatment under the protection of inert gas (such as nitrogen, argon). The annealing temperature needs to be precisely controlled between 100℃-200℃ to promote the chemical reaction between the precursor materials and form a dense, highly crystalline FAI perovskite absorption layer. The annealing time can be adjusted according to the specific experimental conditions, generally within the range of 1min-180min, to ensure that the perovskite layer is fully crystallized without affecting the structure and performance of other layers.
[0036] Step 5, preparing a second transmission layer on the surface of the perovskite absorption layer by vacuum thermal evaporation technology;
[0037] Preparation of hole transport layer and electron blocking layer. On the surface of the FAI perovskite layer, the hole transport layer is prepared again using vacuum thermal evaporation technology. This step is necessary for pin structure batteries; for nip structure batteries, this step can also include the preparation of an electron blocking layer to further improve the efficiency and stability of the battery. The selection and preparation process of the hole transport layer material are similar to those described in step 2 and need to be optimized according to specific needs.
[0038] Step six, preparing a back plate on the surface of the second transport layer by using vacuum thermal evaporation technology or magnetron sputtering technology.
[0039] Preparation of the back electrode: vacuum thermal evaporation or magnetron sputtering is used to prepare the back electrode on the surface of the hole transport layer or the electron blocking layer. The back electrode material is usually made of metals with high conductivity and good stability, such as gold, silver, aluminum, etc. By precisely controlling the deposition parameters, it is ensured that a good ohmic contact is formed between the back electrode and the hole transport layer or the electron blocking layer, the contact resistance is reduced, and the overall performance of the battery is improved.
[0040] In one achievable manner, the perovskite precursor material includes lead iodide, lead chloride, lead bromide, cesium iodide, cesium bromide, cesium chloride and FAI (formamidine hydroiodide, CsI). 4 N 2 ·HI) and other materials; wherein some or all types of materials are alternately deposited for one or more cycles and then annealed to form a perovskite absorption layer.
[0041] In one achievable manner, both step 2 and step 3 are processed in a vacuum environment, and the vacuum degree of the vacuum environment is higher than 10 -3 Pa.
[0042] In one achievable manner, the substrate may be a rigid or flexible material, such as stainless steel, glass, airship skin material, PET, PI or other materials.
[0043] In one feasible manner, the conductive film is composed of one or more layers of materials such as FTO, ITO, AZO, IWO, nanometal mesh, nanosilver wire, ITO / Ag / ITO, nanometal mesh+ITO, nanosilver wire+ITO, etc.; among which, the best material is ITO.
[0044] In one achievable manner, the first transport layer is an electron transport layer or a hole transport layer; when the first transport layer is an electron transport layer and the electron transport layer material is an organic matter, it can be prepared by vacuum thermal evaporation technology, wherein the materials used include at least C60, PhIm (N1, N4-bis (tri-p-tolylphosphoranylidene) -benzene-1, 4-diamine), BCP, AIQ (8-hydroxyquinoline aluminum), TAZ (1, 2, 4-triazole derivative), PBD, Beq2 and DPVBi, an aromatic compound with a large conjugated plane; when the first transport layer is an electron transport layer and the electron transport layer material is an inorganic matter, it can be prepared by magnetron sputtering technology or vacuum thermal evaporation technology, wherein the materials used include at least LiF, MgF, TiO x and SnO x a transition metal oxide; when the first transport layer is a hole transport layer, and the hole transport layer material is an organic matter, wherein the materials used include at least spiro-MeTAD, spiro-TTB, TaTm (N4, N4, N400, N400-tetra ([1,10-biphenyl] -4-yl) - [1,10: 40,100-terphenyl] -4,400-diamine), F6-TCNNQ (2,20- (perfluoronapht a triarylamine derivative of halene-2,6-diylidene), PTAA, PEDOT-PSS, TPD (N,N'-bis(3-methylphenyl)-N,N'-diphenyl-1,1'-diphenyl-4,4'-diamine) and NPD (N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-diphenyl-4,4'-diamine); when the first transport layer is a hole transport layer, and the hole transport layer material is an inorganic substance, wherein the materials used include at least GaP, NiO, CoO, MoO x , WO x , VO x Cr 2 O 3 And a Cu-containing compound.
[0045] In one achievable manner, the perovskite absorption layer is prepared by vacuum thermal evaporation technology, wherein the materials used are lead iodide, lead chloride, lead bromide, cesium iodide, cesium bromide, cesium chloride and FAI.
[0046] In one achievable manner, the second transport layer is an electron blocking layer or a hole transport layer; when the second transport layer is an electron blocking layer and the electron transport layer material is an organic substance, it can be prepared by vacuum thermal evaporation technology, wherein the materials used include at least C60, PhIm, BCP, AIQ, TAZ, PBD, Beq2 and DPVBi, an aromatic compound with a large conjugated plane; when the second transport layer is an electron blocking layer and the electron transport layer material is an inorganic substance, it can be prepared by vacuum thermal evaporation technology, wherein the materials used include at least LiF, MgF, TiO x and SnO x a transition metal oxide; when the second transport layer is a hole transport layer, and the hole transport layer material is an organic substance, wherein the material used includes at least one of spiro-MeTAD, spiro-TTB, TaTm, F6-TCNNQ, PTAA, PEDOT-PSS, TPD and NPD triarylamine derivatives; when the first transport layer is a hole transport layer, and the hole transport layer material is an inorganic substance, wherein the material used includes at least GaP, NiO, CoO, MoO x , WO x , VO x Cr 2 O 3 And a Cu-containing compound.
[0047] In one achievable manner, the back plate is made of gold, silver or copper.
[0048] like Figure 1 According to another aspect of the present application, a perovskite solar cell is provided, which is prepared by the above-mentioned method for preparing a perovskite solar cell, and comprises: a substrate (1), a conductive film (2), a first transmission layer (3), a perovskite precursor material (4), a second transmission layer (5) and a back plate (6) arranged in sequence from bottom to top.
[0049] The present invention adopts vacuum thermal evaporation technology to place perovskite precursor materials such as FAI, lead iodide, lead chloride, lead bromide, cesium iodide, cesium bromide, and cesium chloride in a high vacuum environment, and realizes the alternating deposition of these materials on the substrate by precisely controlling the evaporation rate and deposition conditions. After multiple cycles of deposition and annealing, a high-quality FAI perovskite absorption layer is formed, thereby constructing a complete perovskite solar cell structure. Specific embodiment 1:
[0051] The preparation method of a perovskite solar cell of this embodiment is prepared by the following steps:
[0052] Step 1, preparing a transparent conductive layer (TCO) on a flexible or rigid substrate;
[0053] Step 2, placing the substrate deposited with TCO into a vacuum device, and preparing an electron transport layer (nip structure) or a hole transport layer (pin structure) by using magnetron sputtering technology or vacuum thermal evaporation technology;
[0054] Step 3, using vacuum thermal evaporation technology under vacuum conditions to remove FAI (formamidine hydroiodide CH 4 N 2 HI), lead iodide, lead chloride, lead bromide, cesium iodide, cesium bromide, cesium chloride and other perovskite precursor materials are alternately deposited on the sub-transport layer (nip structure) or the hole transport layer (pin structure), and can be cyclically deposited for multiple cycles;
[0055] Step 4, heating and annealing the sample after depositing the precursor material to form a perovskite absorption layer, the annealing temperature is controlled at 100° C.-300° C., and the annealing time is 10 min-180 min;
[0056] Step 5, preparing a hole transport layer and an electron blocking layer on the surface of the perovskite by using vacuum thermal evaporation technology;
[0057] Step 6: Prepare a back electrode on the surface of the hole transport layer by using vacuum thermal evaporation or magnetron sputtering technology.
[0058] The open circuit voltage of the battery prepared in Example 1 is 10-1.3V, and the short circuit current is 20-30mA / cm 2 , the photoelectric conversion efficiency is 15%-25%.
[0059] Vacuum thermal evaporation technology: This invention successfully applies vacuum thermal evaporation technology to the preparation of FAI perovskite layer, solving the problem that FAI is difficult to prepare in a vacuum environment. Compared with the traditional solution method, vacuum thermal evaporation technology has the advantages of high material utilization rate, controllable film quality, and easy large-area preparation.
[0060] Multilayer alternating deposition: By depositing perovskite precursor materials in multiple layers, precise control of the composition and structure of the perovskite layer is achieved. This method helps to optimize the band structure of the perovskite layer and improve light absorption efficiency and carrier transport performance.
[0061] Flexible battery structure design: The present invention supports the preparation of two types of battery structures, nip and pin, providing users with more choices. At the same time, by optimizing the combination and thickness of each layer of material, the performance and stability of the battery can be further improved.
[0062] Wide range of substrate applicability: The perovskite solar cell structure of the present invention is applicable to a variety of substrate materials, including transparent and opaque rigid and flexible materials, which makes it possible to realize the diversified application of perovskite solar cells.
[0063] It should be noted that although this application is used as an example to introduce a method for preparing a perovskite solar cell and a perovskite solar cell as above, those skilled in the art will understand that this application should not be limited thereto. In fact, users can flexibly set various parameters according to personal preferences and / or actual application scenarios, as long as the design is reasonable.
[0064] In this way, a perovskite solar cell is prepared through six steps, wherein the first step is to prepare a conductive film on a substrate; the second step is to prepare a first transmission layer on the conductive film by magnetron sputtering technology or vacuum thermal evaporation technology; the third step is to deposit a perovskite precursor material on the first transmission layer by vacuum thermal evaporation technology; the fourth step is to heat and anneal the sample deposited with the perovskite precursor material to form a perovskite absorption layer; the fifth step is to prepare a second transmission layer on the surface of the perovskite absorption layer by vacuum thermal evaporation technology; the sixth step is to prepare a back plate on the surface of the second transmission layer by vacuum thermal evaporation technology or magnetron sputtering technology. The perovskite solar cell prepared in the present application can achieve high photoelectric conversion efficiency while preventing the generation of harmful substances that pollute the environment during the preparation process and even affect the health of operators.
[0065] The embodiments of the present application have been described above, and the above description is exemplary, not exhaustive, and is not limited to the disclosed embodiments. Many modifications and changes will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The selection of terms used herein is intended to best explain the principles of the embodiments, practical applications, or improvements to the technology in the market, or to enable other persons of ordinary skill in the art to understand the embodiments disclosed herein.
Claims
1. A method for preparing a perovskite solar cell, characterized in that: The steps include: Step 1, preparing a conductive film on a substrate; Step 2: preparing a first transmission layer on the conductive film by magnetron sputtering technology or vacuum thermal evaporation technology; Step three, depositing the perovskite precursor material on the first transport layer by vacuum thermal evaporation technology; Step 4, heating and annealing the sample on which the perovskite precursor material is deposited to form a perovskite absorption layer; Step 5, preparing a second transmission layer on the surface of the perovskite absorption layer by vacuum thermal evaporation technology; Step six, preparing a back plate on the surface of the second transport layer by using vacuum thermal evaporation technology or magnetron sputtering technology.
2. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The substrate is a rigid material or a flexible material.
3. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The conductive film is composed of a laminate of one or more materials selected from the group consisting of FTO, ITO, AZO, IWO, nano-metal grid, nano-silver wire, and ITO / Ag / ITO.
4. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The first transport layer is an electron transport layer or a hole transport layer; When the first transport layer is an electron transport layer, and the electron transport layer material is an organic substance, it is prepared using vacuum thermal evaporation technology, wherein the material used is an aromatic compound with a large conjugated plane; When the first transport layer is an electron transport layer, and the electron transport layer material is an inorganic substance, it is prepared by using magnetron sputtering technology or vacuum thermal evaporation technology, wherein the material used is a transition metal oxide; When the first transport layer is a hole transport layer, and the hole transport layer material is an organic substance, wherein the material used is a triarylamine derivative; When the first transport layer is a hole transport layer, and the hole transport layer material is an inorganic substance, the material used includes at least GaP, NiO, CoO, MoO x , WO x , VO x , Cr2O3 and a Cu-containing compound.
5. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The perovskite precursor material includes at least one of lead iodide, lead chloride, lead bromide, cesium iodide, cesium bromide, cesium chloride and FAI material.
6. The method for preparing a perovskite solar cell according to claim 5, characterized in that: The perovskite precursor material is alternately deposited for one or more cycles and then annealed to form a perovskite absorption layer.
7. The method for preparing a perovskite solar cell according to any one of claims 4 to 6, characterized in that: The second step and the third step are both processed in a vacuum environment, and the vacuum degree of the vacuum environment is higher than 10 -3 Pa.
8. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The second transport layer is an electron blocking layer or a hole transport layer; When the second transport layer is an electron blocking layer and the electron transport layer material is an organic substance, it is prepared using vacuum thermal evaporation technology, wherein the material used is an aromatic compound with a large conjugated plane; When the second transport layer is an electron blocking layer and the electron transport layer material is an inorganic substance, it is prepared using vacuum thermal evaporation technology, wherein the material used is a transition metal oxide; When the second transport layer is a hole transport layer, and the hole transport layer material is an organic substance, wherein the material used is a triarylamine derivative; When the first transport layer is a hole transport layer, and the hole transport layer material is an inorganic substance, the material used includes at least GaP, NiO, CoO, MoO x , WO x , VO x , Cr2O3 and a Cu-containing compound.
9. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The back plate is made of gold, silver or copper.
10. A perovskite solar cell, prepared by the method for preparing a perovskite solar cell according to any one of claims 1 to 9, characterized in that: include: The substrate, the conductive film, the first transmission layer, the perovskite precursor material, the second transmission layer and the back plate are arranged in sequence from bottom to top.