Non-anisotropic magnetic storage unit and application and manufacturing method thereof

Abstract

The invention discloses a non-anisotropic magnetic storage unit and application and a manufacturing method thereof. The magnetic storage unit is provided with a substrate, a buffer layer and a magnetization layer from bottom to top in sequence, a gap is formed in the center line position of one side of the magnetic storage unit; a first magnetic tunnel junction, a second magnetic tunnel junction, a third magnetic tunnel junction and a fourth magnetic tunnel junction are sequentially arranged on the magnetized layer from left to right, and the gap is located between the second magnetic tunnel junction and the third magnetic tunnel junction; the first magnetic tunnel junction and the fourth magnetic tunnel junction are both used for changing the magnetization state of the magnetization layer; the second magnetic tunnel junction and the third magnetic tunnel junction are both used for reading the magnetization state of the magnetization layer. The method can reduce operation energy consumption and physical volume, and can be widely applied to the field of microelectronic storage devices.

Description

Technical Field

[0001] The present invention relates to the field of microelectronic storage devices, and in particular to a non-reciprocal magnetic storage unit and an application and a manufacturing method thereof. Background Art

[0002] Traditional magnetic media storage relies on the magnetization direction of basic magnetic storage units to represent binary data. The magnetization direction of each unit is opposite, representing the binary code "0" or "1". The magnetic head, as an electromagnetic element, changes the magnetization direction of the storage unit by generating a magnetic field to write data; at the same time, the magnetization state of the storage unit is converted into an electrical pulse through electromagnetic induction to read data. However, as the storage density increases, the size of traditional storage units gradually decreases, resulting in physical limitations to the storage density increase.

[0003] In recent years, the application of non-reciprocal magnetic storage units has provided a new idea for breaking through the limitations of traditional storage density. However, existing non-reciprocal magnetic storage units have high energy consumption and large physical size. Summary of the invention

[0004] In order to solve the above problems, the purpose of the present invention is to provide a non-reciprocal magnetic storage unit and its application and manufacturing method, which can reduce operating energy consumption and physical volume.

[0005] On the one hand, the present invention provides a non-reciprocal magnetic storage unit, wherein the magnetic storage unit is provided with a substrate, a buffer layer and a magnetization layer in order from bottom to top; a notch is formed at the midline position of one side of the magnetization layer;

[0006] On the magnetic layer, a first magnetic tunnel junction, a second magnetic tunnel junction, a third magnetic tunnel junction and a fourth magnetic tunnel junction are sequentially arranged from left to right, and the gap is located between the second magnetic tunnel junction and the third magnetic tunnel junction;

[0007] The first magnetic tunnel junction and the fourth magnetic tunnel junction are both used to change the magnetization state of the magnetic layer;

[0008] The second magnetic tunnel junction and the third magnetic tunnel junction are both used to read the magnetization state of the magnetic layer.

[0009] Optionally, the notch is an isosceles triangle.

[0010] Optionally, the height of the isosceles triangle ranges from 15 nm to 20 nm, and the length of the base of the isosceles triangle ranges from 70 nm to 90 nm.

[0011] Optionally, the material of the magnetic layer includes soft magnetic amorphous material.

[0012] Optionally, the magnetic layer is in the form of a thin film, and the thickness of the magnetic layer is in the range of 4nm-6nm.

[0013] Optionally, the magnetic storage unit is in the shape of a cuboid.

[0014] Optionally, the length range of the substrate, the buffer layer and the magnetic layer is 450nm-550nm, the width range of the substrate, the buffer layer and the magnetic layer is 70nm-90nm, and the total thickness range of the substrate, the buffer layer and the magnetic layer is 10nm-20nm.

[0015] Optionally, the magnetic layer further includes at least one protective layer, and the material of the protective layer includes a metal oxide material.

[0016] On the other hand, the present invention provides an application of a non-isotropic magnetic storage unit, where the magnetic storage unit described above is applied to binary storage; wherein the magnetic layer can generate at least two magnetization states, and each magnetization state corresponds to a binary number.

[0017] In another aspect, the present invention provides a method for manufacturing a non-isotropic magnetic storage unit, comprising the following steps:

[0018] A magnetic layer is prepared on a buffer layer provided with a substrate by using a vacuum sputtering technique;

[0019] Using an electron beam to etch a notch at a midline position on the same side of the substrate, the buffer layer, and the magnetic layer;

[0020] A first magnetic tunnel junction, a second magnetic tunnel junction, a third magnetic tunnel junction and a fourth magnetic tunnel junction are prepared on the magnetic layer; the gap is located between the second magnetic tunnel junction and the third magnetic tunnel junction.

[0021] The implementation of the present invention includes the following beneficial effects: the non-reciprocal magnetic storage unit provided by the present invention is provided with a substrate, a buffer layer and a magnetization layer in sequence from bottom to top; a gap is formed at the midline position of one side of the magnetic storage unit, and on the magnetization layer, a first magnetic tunnel junction, a second magnetic tunnel junction, a third magnetic tunnel junction and a fourth magnetic tunnel junction are provided in sequence from left to right, and the gap is located between the second magnetic tunnel junction and the third magnetic tunnel junction, the first magnetic tunnel junction and the fourth magnetic tunnel junction are both used to change the magnetization state of the magnetization layer, and the second magnetic tunnel junction and the third magnetic tunnel junction are both used to read the magnetization state of the magnetization layer; by providing the gap on the magnetic storage unit, the current intensity required for storage and reading of the magnetic storage structure is reduced, and the energy consumption consumed by storage and reading is reduced, and the first magnetic tunnel junction, the second magnetic tunnel junction, the third magnetic tunnel junction and the fourth magnetic tunnel junction are provided in sequence from left to right, a pair of magnetic tunnel junctions are used to read data, and another pair of magnetic tunnel junctions are used to store data, so that the physical volume of the magnetic storage unit can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a top view of a non-reciprocal magnetic storage unit provided by the present invention;

[0023] Figure 2 It is a three-view diagram of a non-reciprocal magnetic storage unit provided by the present invention;

[0024] Figure 3 It is a three-dimensional diagram of a non-reciprocal magnetic storage unit provided by the present invention;

[0025] Figure 4 It is a schematic diagram of the positions of a substrate, a buffer layer and a magnetization layer provided by the present invention;

[0026] Figure 5 The present invention is a flowchart of the steps of a method for manufacturing a non-reciprocal magnetic storage unit. DETAILED DESCRIPTION

[0027] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. The step numbers in the following embodiments are only provided for the convenience of explanation and description, and the order between the steps is not limited in any way. The execution order of each step in the embodiment can be adaptively adjusted according to the understanding of those skilled in the art.

[0028] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the embodiments of the present application. The singular forms of "a", "said" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings.

[0029] When the following description relates to the accompanying drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. On the contrary, they are only examples of devices and methods consistent with some aspects of the present application as detailed in the attached claims. In the description of the present application, it is necessary to understand that the terms "first / S100", "second / S200", "third / S300", etc. are only used to distinguish similar objects, and do not have to be used to describe a specific order or sequence, nor can they be understood as indicating or implying relative importance. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to the specific circumstances.

[0030] In order to better understand the technical solution of the present invention, the following technical terms are explained.

[0031] Magnetic Tunnel Junction (MTJ): It is a memory device based on the magnetoresistance effect. An MTJ consists of two ferromagnetic layers and an insulating layer sandwiched in between. Its resistance changes with the relative direction of the magnetization direction of the ferromagnetic layer. This characteristic makes MTJ play a key role in non-volatile memory (such as MRAM, Magnetic Random Access Memory). The working principle of MTJ is that when the magnetization directions of the two ferromagnetic layers are parallel, electrons can more easily pass through the tunnel layer and show low resistance; when the magnetization directions are antiparallel, electrons find it difficult to pass through and the resistance increases. MRAM is based on this principle and stores binary data "0" and "1" by controlling the resistance state of MTJ. The manufacturing methods of MTJ include mechanical stripping, chemical vapor deposition, liquid phase stripping and molecular beam epitaxy, among which molecular beam epitaxy technology can accurately control the thickness, composition, doping concentration, etc. of the growth.

[0032] like Figure 1-4 As shown, Figure 1 is a top view of a non-isotropic magnetic storage unit. Figure 2 It is a three-view diagram of a non-isotropic magnetic storage unit. Figure 2 (a) is a left view of a non-isotropic magnetic storage unit. Figure 2 (b) is a front view of a non-isotropic magnetic storage unit. Figure 2 (c) is a right view of a non-isotropic magnetic storage unit. Figure 3 is a three-dimensional diagram of a non-isotropic magnetic storage unit. Figure 4 It is a schematic diagram of the positions of a substrate, a buffer layer and a magnetized layer.

[0033] In the figure, 1 represents the overall schematic diagram of the substrate, the buffer layer and the magnetization layer; 2 represents the first magnetic tunnel junction; 3 represents the second magnetic tunnel junction; 4 represents the third magnetic tunnel junction; 5 represents the fourth magnetic tunnel junction; 6 represents the gap; 13 represents the substrate; 12 represents the buffer layer; and 11 represents the magnetization layer.

[0034] In some embodiments, the present invention provides a non-reciprocal magnetic storage unit, wherein the magnetic storage unit is provided with a substrate, a buffer layer and a magnetization layer in order from bottom to top; a notch is formed at the midline position of one side of the magnetization layer;

[0035] On the magnetic layer, a first magnetic tunnel junction, a second magnetic tunnel junction, a third magnetic tunnel junction and a fourth magnetic tunnel junction are sequentially arranged from left to right, and the gap is located between the second magnetic tunnel junction and the third magnetic tunnel junction;

[0036] The first magnetic tunnel junction and the fourth magnetic tunnel junction are both used to change the magnetization state of the magnetic layer;

[0037] The second magnetic tunnel junction and the third magnetic tunnel junction are both used to read the magnetization state of the magnetic layer.

[0038] Specifically, the magnetization layer between the second magnetic tunnel junction and the third magnetic tunnel junction can produce two magnetization states. 2 and 5 are MTJ data writers. An external magnetic field is applied to the ferromagnetic layer of MTJ2 and 3 to make the magnetization layer generate a special magnetic state (skyrmions), which can produce at least two magnetization states. 3 and 4 are MTJ data readers. When the magnetization layer (the magnetization layer between the second magnetic tunnel junction and the third magnetic tunnel junction) produces a special magnetic state, current will be generated on MTJ3 and 4 to complete the purpose of data reading.

[0039] The gap can be located only at the midline position of one side of the magnetic layer, or can penetrate the magnetic layer, substrate and buffer layer and be located at the midline position on the same side of the magnetic layer, substrate and buffer layer, as long as there is a gap at the midline position of one side of the magnetic layer.

[0040] The material of the substrate may be, but is not limited to, silicon or silicon dioxide, which is used to provide a stable base to support the buffer layer and the magnetic layer.

[0041] The buffer layer is used to adjust the film-forming state of the magnetic layer, including the crystal direction and crystal plane, etc. In addition, the buffer layer can also be used to adjust the resistance between the substrate and the magnetic layer.

[0042] The gap is an isosceles triangle. The height of the isosceles triangle ranges from 15nm to 20nm, and the length of the base of the isosceles triangle ranges from 70nm to 90nm. Among them, the height of the isosceles triangle is preferably 18nm, and the length of the base of the isosceles triangle is preferably 80nm.

[0043] The material of the magnetic layer may be, but is not limited to, soft magnetic amorphous material CoPt or an alloy of soft magnetic amorphous CoPt.

[0044] The magnetic layer is in the form of a thin film, and the thickness of the magnetic layer is in the range of 4nm-6nm, preferably 5nm.

[0045] The shape of the magnetic storage unit may be, but is not limited to, a cuboid, a square, a circle, or an ellipse, preferably a cuboid.

[0046] When the shape of the magnetic storage unit is a cuboid, the length range of the substrate, buffer layer and magnetization layer is 450nm-550nm, preferably 500nm, the width range is 70nm-90nm, preferably 80nm, and the total thickness range of the substrate, buffer layer and magnetization layer is 10nm-20nm, preferably 15nm.

[0047] The magnetic layer further includes at least one protective layer. The material of the protective layer includes a metal oxide material. The metal oxide material is preferably aluminum oxide. The thickness of the protective layer is preferably 5 nm.

[0048] In some embodiments, the present invention provides an application of a non-isotropic magnetic storage unit, where the magnetic storage unit described above is applied to a binary storage device; wherein the magnetic layer can generate at least two magnetization states, each magnetization state corresponding to a binary number.

[0049] Specifically, two magnetization states can be generated between the second magnetic tunnel junction and the third magnetic tunnel junction of the magnetic storage unit (the gap), and each magnetization state corresponds to the binary numbers "0" and "1".

[0050] In some embodiments, Figure 5 As shown, Figure 5 The present invention provides a method for manufacturing a non-reciprocal magnetic storage unit, comprising the following steps:

[0051] S100, preparing a magnetic layer on a buffer layer provided with a substrate by using a vacuum sputtering technology.

[0052] Specifically, the buffer layer provided with the substrate may be prepared in advance, or the substrate may be prepared first, and then the buffer layer may be prepared on the substrate. Then, the magnetic layer is prepared on the buffer layer using vacuum sputtering technology. In order to improve the uniformity and quality of the magnetic layer, the process of preparing the magnetic layer on the buffer layer using vacuum sputtering technology is carried out in a vacuum environment, and after the preparation of the magnetic layer is completed, annealing treatment is performed to improve the magnetic properties of the magnetic layer. The material for preparing the magnetic layer and the specific structure of the magnetic layer are the same as those of the aforementioned magnetic storage unit, and will not be repeated here.

[0053] S200, using an electron beam to etch a notch at a midline position on the same side of the substrate, the buffer layer, and the magnetic layer.

[0054] Specifically, the substrate, the buffer layer and the magnetized layer are stacked to form a structure 1, which can be a rectangular or cubic structure. An electron beam is used to etch a notch at the midline position of one side of the structure 1. The structure and size of the notch are the same as those described above and will not be repeated here.

[0055] After step S200, at least one layer of metal oxide may be deposited on the surface of the magnetic layer as a protective layer.

[0056] S300 , preparing a first magnetic tunnel junction, a second magnetic tunnel junction, a third magnetic tunnel junction and a fourth magnetic tunnel junction on the magnetization layer.

[0057] Specifically, a first magnetic tunnel junction, a second magnetic tunnel junction, a third magnetic tunnel junction and a fourth magnetic tunnel junction are prepared on the magnetic layer, and the gap is located between the second magnetic tunnel junction and the third magnetic tunnel junction.

[0058] The implementation of the present invention includes the following beneficial effects: the present invention arranges a gap on the magnetic storage unit, so that the current intensity required for storage and reading of the magnetic storage structure is reduced, and the energy consumed for storage and reading is reduced. A first magnetic tunnel junction, a second magnetic tunnel junction, a third magnetic tunnel junction and a fourth magnetic tunnel junction are arranged in sequence from left to right. A pair of magnetic tunnel junctions are used to read data and another pair of magnetic tunnel junctions are used to store data, which can reduce the physical volume.

[0059] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present invention. The appearance of the phrase in various places in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0060] The above is a specific description of the preferred implementation of the present invention, but the invention is not limited to the embodiments. Those skilled in the art may make various equivalent modifications or substitutions without violating the spirit of the present invention. These equivalent modifications or substitutions are all included in the scope defined by the claims of this application. In the present invention, the same or substantially equivalent methods between different embodiments are applicable to other embodiments.

Claims

1. A non-isotropic magnetic storage unit, characterized in that: The magnetic storage unit is provided with a substrate, a buffer layer and a magnetization layer in order from bottom to top; a notch is formed at the midline position of one side of the magnetization layer; On the magnetic layer, a first magnetic tunnel junction, a second magnetic tunnel junction, a third magnetic tunnel junction and a fourth magnetic tunnel junction are sequentially arranged from left to right, and the gap is located between the second magnetic tunnel junction and the third magnetic tunnel junction; The first magnetic tunnel junction and the fourth magnetic tunnel junction are both used to change the magnetization state of the magnetic layer; The second magnetic tunnel junction and the third magnetic tunnel junction are both used to read the magnetization state of the magnetic layer.

2. The magnetic storage unit according to claim 1, characterized in that The notch is an isosceles triangle.

3. The magnetic storage unit according to claim 2, characterized in that The height of the isosceles triangle ranges from 15 nm to 20 nm, and the length of the base of the isosceles triangle ranges from 70 nm to 90 nm.

4. The magnetic storage unit according to claim 1, characterized in that The material of the magnetic layer includes soft magnetic amorphous material.

5. The magnetic storage unit according to any one of claims 1 to 4, characterized in that: The magnetic layer is a thin film, and the thickness of the magnetic layer is in the range of 4nm-6nm.

6. The magnetic storage unit according to any one of claims 1 to 4, characterized in that: The magnetic storage unit is in the shape of a cuboid.

7. The magnetic storage unit according to any one of claims 1 to 4, characterized in that: The lengths of the substrate, the buffer layer and the magnetic layer are all in the range of 450nm-550nm, the widths are all in the range of 70nm-90nm, and the total thickness of the substrate, the buffer layer and the magnetic layer is in the range of 10nm-20nm.

8. The magnetic storage unit according to any one of claims 1 to 4, characterized in that: The magnetic layer further includes at least one protective layer, and the material of the protective layer includes a metal oxide material.

9. An application of a non-isotropic magnetic storage unit, characterized in that: The magnetic storage unit according to any one of claims 1 to 8 is applied to binary storage; wherein the magnetic layer can produce at least two magnetization states, each magnetization state corresponding to a binary number.

10. A method for manufacturing a non-isotropic magnetic storage unit, characterized in that: The following steps are involved: A magnetic layer is prepared on a buffer layer provided with a substrate by using a vacuum sputtering technique; Using an electron beam to etch a notch at a midline position on the same side of the substrate, the buffer layer, and the magnetic layer; A first magnetic tunnel junction, a second magnetic tunnel junction, a third magnetic tunnel junction and a fourth magnetic tunnel junction are prepared on the magnetic layer; the gap is located between the second magnetic tunnel junction and the third magnetic tunnel junction.

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