Semiconductor laser element with quantum oscillation effect layer

Abstract

The semiconductor laser element sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and the quantum oscillation effect layer is arranged between the lower waveguide layer and the lower limiting layer. According to the invention, surface and interface electron scattering is inhibited, a repeated Bloch state is formed to induce quantum oscillation and carrier linear convolution motion, the electron mobility and conductivity are improved, the series resistance and voltage of the laser element after lasing are reduced, and the slope efficiency and luminous efficiency of the laser element are improved; meanwhile, the quantum oscillation effect layer regulates and controls electrode spin Hall injection magneton, improves spin conductivity of the lower waveguide layer and the lower limiting layer, further reduces series resistance and voltage, improves the pinned proportion of quasi Fermi levels of holes and electrons, regulates and controls symmetric breaking away from equilibrium phase change, and improves the performance of the semiconductor device. And the problem of discontinuous or abrupt junction voltage jump of the laser element is solved.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor laser element with a quantum oscillation effect layer. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes.

[0004] 1) Laser is generated by stimulated radiation of carriers, the spectrum half-width is small, the brightness is very high, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneously radiated, and the output power of a single light-emitting diode is in the mW level;

[0005] 2) The current density of the laser is up to KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in the energy level of the electron transition, producing the same coherent light as the photon and the induced photon;

[0007] 4) Different principles: When an external voltage is applied to a light-emitting diode, electron holes jump to a quantum well or a pn junction to generate radiative recombination light, while a laser can only emit when the lasing conditions are met. The carrier distribution in the active region must be reversed, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor lasers have the following problems: after the laser is fired, the carrier concentration in the multi-quantum well active region is saturated, the bipolar conductivity effect is weakened, and the series resistance of the laser increases, causing the laser voltage to rise; the multi-quantum well laser has a discontinuous or sudden junction voltage jump at the threshold. Summary of the invention

[0009] The present invention proposes a semiconductor laser element with a quantum oscillation effect layer, which improves the spin conductivity of the lower waveguide layer and the lower confinement layer, further reduces the series resistance and voltage, and increases the pinning ratio of the quasi-Fermi levels of holes and electrons, regulates the symmetry breaking of the phase transition far from the equilibrium state, and eliminates the problem of discontinuous or sudden junction voltage jumps in the laser element.

[0010] The present invention provides a semiconductor laser element with a quantum oscillation effect layer, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. A quantum oscillation effect layer is provided between the lower waveguide layer and the lower confinement layer. The quantum oscillation effect layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, Ga Any one or any combination of N / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlN superlattice, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0011] Preferably, the refractive index coefficient distribution of the quantum oscillation effect layer has a function y=A+B*e x / lnx curve distribution; the refractive index coefficient of the lower waveguide layer ≥ the refractive index coefficient of the quantum oscillation effect layer ≥ the refractive index coefficient of the lower confinement layer.

[0012] Preferably, the bandgap width distribution of the quantum oscillation effect layer has a function y=C+D*xe x Curve distribution; the bandgap width of the lower confinement layer ≥ the bandgap width of the quantum oscillation effect layer ≥ the bandgap width of the lower waveguide layer.

[0013] Preferably, the lattice constant distribution of the quantum oscillation effect layer has a curve distribution of the function y=E+F*x / lnx; the lattice constant of the lower waveguide layer ≥ the lattice constant of the quantum oscillation effect layer ≥ the lattice constant of the lower confinement layer.

[0014] Preferably, the Philips ionization degree distribution of the quantum oscillation effect layer has a function y=G+H*x -a (a is an odd number greater than 1) The third quadrant curve distribution; the Philips ionization degree of the lower waveguide layer ≥ the Philips ionization degree of the quantum oscillation effect layer ≥ the Philips ionization degree of the lower confinement layer.

[0015] Preferably, the quantum oscillation effect layer has the following relationship: E≥C≥C≥G.

[0016] Preferably, the In / C element ratio distribution of the quantum oscillation effect layer has a function y=J+K*x / lnx curve distribution; the In / C element ratio of the lower waveguide layer ≥ the In / C element ratio of the quantum oscillation effect layer ≥ the In / C element ratio of the lower confinement layer; the In / H element ratio distribution of the quantum oscillation effect layer has a function y=L+M*x / lnx curve distribution; the In / H element ratio of the lower waveguide layer ≥ the In / H element ratio of the quantum oscillation effect layer ≥ the In / H element ratio of the lower confinement layer; the In / O element ratio distribution of the quantum oscillation effect layer has a function y=N+P*x / lnx curve distribution; the In / O element ratio of the lower waveguide layer ≥ the In / O element ratio of the quantum oscillation effect layer ≥ the In / O element ratio of the lower confinement layer, and the In / H element ratio distribution, In / C element ratio distribution, and In / O element ratio distribution of the quantum oscillation effect layer have the following relationship: J≥N≥L.

[0017] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN or Any combination, with a thickness of 10 to 80 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 120 angstroms.

[0018] Preferably, the lower limiting layer, the lower waveguide layer, the upper waveguide layer, and the upper limiting layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0019] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0020] Compared with the prior art, the semiconductor laser element with a quantum oscillation effect layer provided in an embodiment of the present invention has the following beneficial effects: the quantum oscillation effect layer suppresses the scattering of electrons by the surface and interface, forms repeated Bloch states to induce quantum oscillations and linear cyclotron motion of carriers, improves electron mobility and conductivity, reduces the series resistance and voltage of the laser element after lasing, and improves the slope efficiency and luminous efficiency of the laser element; at the same time, the quantum oscillation effect layer regulates the electrode spin Hall injection of magnons, improves the spin conductivity of the lower waveguide layer and the lower confinement layer, further reduces the series resistance and voltage, and increases the proportion of quasi-Fermi levels of holes and electrons that are pinned, regulates the symmetry breaking of the phase transition away from the equilibrium state, and eliminates the problem of discontinuous or sudden junction voltage jumps in the laser element. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic structural diagram of a semiconductor laser element with a quantum oscillation effect layer according to an embodiment of the present invention;

[0022] Figure 2 It is a SIMS secondary ion mass spectrum of a semiconductor laser element with a quantum oscillation effect layer according to an embodiment of the present invention;

[0023] Reference numerals: 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer, 105: upper confinement layer, 106: quantum oscillation effect layer. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] In order to solve the above problems, a semiconductor laser element with a quantum oscillation effect layer provided in an embodiment of the present application will be introduced and explained in detail through the following specific embodiments.

[0026] Reference Figure 1-2 The present invention provides a semiconductor laser element with a quantum oscillation effect layer, which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105. A quantum oscillation effect layer 106 is provided between the lower waveguide layer 102 and the lower confinement layer 101. The quantum oscillation effect layer 106 is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, In Any one or any combination of GaN / AlInN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlN superlattice, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0027] In the present invention, the refractive index coefficient distribution of the quantum oscillation effect layer 106 has a function y=A+B*e x / lnx curve distribution; the refractive index coefficient of the lower waveguide layer 102 ≥ the refractive index coefficient of the quantum oscillation effect layer 106 ≥ the refractive index coefficient of the lower confinement layer 101. The bandgap width distribution of the quantum oscillation effect layer 106 has a function y=C+D*xe xCurve distribution; the bandgap width of the lower confinement layer 101 ≥ the bandgap width of the quantum oscillation effect layer 106 ≥ the bandgap width of the lower waveguide layer 102. The lattice constant distribution of the quantum oscillation effect layer 106 has the function y=E+F*x / lnx curve distribution; the lattice constant of the lower waveguide layer 102 ≥ the lattice constant of the quantum oscillation effect layer 106 ≥ the lattice constant of the lower confinement layer 101. The Philips ionization degree distribution of the quantum oscillation effect layer 106 has the function y=G+H*x -a (a is an odd number greater than 1) The third quadrant curve distribution: the Philips ionization degree of the lower waveguide layer 102 ≥ the Philips ionization degree of the quantum oscillation effect layer 106 ≥ the Philips ionization degree of the lower confinement layer 101. In summary, the quantum oscillation effect layer 106 has the following relationship: E≥C≥C≥G.

[0028] In the present invention, the In / C element ratio distribution of the quantum oscillation effect layer 106 has a function y=J+K*x / lnx curve distribution; the In / C element ratio of the lower waveguide layer 102 is ≥ the In / C element ratio of the quantum oscillation effect layer 106 is ≥ the In / C element ratio of the lower confinement layer 101; the In / H element ratio distribution of the quantum oscillation effect layer 106 has a function y=L+M*x / lnx curve distribution; the In / H element ratio of the lower waveguide layer 102 is ≥ the In / H element ratio of the quantum oscillation effect layer 106. The element ratio is ≥ the In / H element ratio of the lower confinement layer 101; the In / O element ratio distribution of the quantum oscillation effect layer 106 has a function y=N+P*x / lnx curve distribution; the In / O element ratio of the lower waveguide layer 102 is ≥ the In / O element ratio of the quantum oscillation effect layer 106 is ≥ the In / O element ratio of the lower confinement layer 101; in summary, the In / H element ratio distribution, In / C element ratio distribution, and In / O element ratio distribution of the quantum oscillation effect layer 106 have the following relationship: J≥N≥L.

[0029] The quantum oscillation effect layer 106 suppresses the surface and interface scattering of electrons, forms repeated Bloch states to induce quantum oscillations and carrier linear cyclotron motion, improves electron mobility and conductivity, reduces the series resistance and voltage of the laser element after lasing, and improves the slope efficiency and luminous efficiency of the laser element; at the same time, the quantum oscillation effect layer regulates the electrode spin Hall injection of magnetic particles, improves the spin conductivity of the lower waveguide layer 102 and the lower confinement layer 101, further reduces the series resistance and voltage, and increases the pinning ratio of the quasi-Fermi energy levels of holes and electrons, regulates the symmetry breaking of the phase transition away from the equilibrium state, and eliminates the problem of discontinuous or sudden junction voltage jumps in the laser element. Compared with traditional lasers, the data are as follows:

[0030] Blue Laser Project Conventional laser Laser of the present invention Range of change Slope efficiency (W / A) 0.8 1.97 146％ <![CDATA[Threshold current density (kA / cm 2 )]]> 2.4 0.67 -72％ Optical power(W) 5.1 10.9 114％ Voltage (V) 6.5 4.2 -35％ Series resistance (Ω) 17 4.1 -76％

[0031] In the present invention, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN. The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 120 angstroms.

[0032] In the present invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0033] In the present invention, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0034] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A semiconductor laser element having a quantum oscillation effect layer, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that: A quantum oscillation effect layer (106) is provided between the lower waveguide layer (102) and the lower confinement layer (101), and the quantum oscillation effect layer (106) is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, GaN / AlInGa N superlattice, GaN / AlN superlattice, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, any one or any combination of BN.

2. The semiconductor laser element with a quantum oscillation effect layer according to claim 1, characterized in that: The refractive index coefficient distribution of the quantum oscillation effect layer (106) has a function y=A+B*e x / lnx curve distribution; the refractive index coefficient of the lower waveguide layer (102) ≥ the refractive index coefficient of the quantum oscillation effect layer (106) ≥ the refractive index coefficient of the lower confinement layer (101).

3. The semiconductor laser element with a quantum oscillation effect layer according to claim 1, characterized in that: The bandgap width distribution of the quantum oscillation effect layer (106) has a function y=C+D*xe x Curve distribution: the bandgap width of the lower confinement layer (101) ≥ the bandgap width of the quantum oscillation effect layer (106) ≥ the bandgap width of the lower waveguide layer (102).

4. The semiconductor laser element with a quantum oscillation effect layer according to claim 1, characterized in that: The lattice constant distribution of the quantum oscillation effect layer (106) has a function y=E+F*x / lnx curve distribution; the lattice constant of the lower waveguide layer (102) ≥ the lattice constant of the quantum oscillation effect layer (106) ≥ the lattice constant of the lower confinement layer (101).

5. The semiconductor laser element with a quantum oscillation effect layer according to claim 1, characterized in that: The Phillips ionization distribution of the quantum oscillation effect layer (106) has a function y=G+H*x -a (a is an odd number greater than 1) The third quadrant curve distribution; the Philips ionization degree of the lower waveguide layer (102) ≥ the Philips ionization degree of the quantum oscillation effect layer (106) ≥ the Philips ionization degree of the lower confinement layer (101).

6. A semiconductor laser element with a quantum oscillation effect layer according to claims 2-5, characterized in that: The quantum oscillation effect layer (106) has the following relationship: E≥C≥C≥G.

7. The semiconductor laser element with a quantum oscillation effect layer according to claim 1, characterized in that: The In / C element ratio distribution of the quantum oscillation effect layer (106) has a function y=J+K*x / lnx curve distribution; the In / C element ratio of the lower waveguide layer (102) is greater than or equal to the In / C element ratio of the quantum oscillation effect layer (106) and greater than or equal to the In / C element ratio of the lower confinement layer (101); The In / H element ratio distribution of the quantum oscillation effect layer (106) has a function y=L+M*x / lnx curve distribution; the In / H element ratio of the lower waveguide layer (102) is greater than or equal to the In / H element ratio of the quantum oscillation effect layer (106) and greater than or equal to the In / H element ratio of the lower confinement layer (101); The In / O element ratio distribution of the quantum oscillation effect layer (106) has a function y=N+P*x / lnx curve distribution; the In / O element ratio of the lower waveguide layer (102) is greater than or equal to the In / O element ratio of the quantum oscillation effect layer (106) and greater than or equal to the In / O element ratio of the lower confinement layer (101); The In / H element ratio distribution, In / C element ratio distribution, and In / O element ratio distribution of the quantum oscillation effect layer (106) have the following relationship: J≥N≥L.

8. The semiconductor laser element with a quantum oscillation effect layer according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN or any combination thereof, with a thickness of 10 to 80 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 120 angstroms.

9. The semiconductor laser element with a quantum oscillation effect layer according to claim 1, characterized in that: The lower confinement layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper confinement layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

10. The semiconductor laser element with a quantum oscillation effect layer according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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