Simulation method, device and equipment of high electron mobility transistor
By constructing a voltage feedback circuit in the circuit model of HEMT and providing a variable voltage to simulate the charge trapping effect, the problem of difficulty in accurately simulating the change of HEMT on-resistance in the prior art is solved, and a more accurate circuit model simulation is achieved.
Patent Information
- Application Number
- CN202411300600.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-18
- Publication Date
- 2025-02-18
AI Technical Summary
The prior art is difficult to accurately simulate the dynamic changes in the on-resistance of high electron mobility transistors (HEMTs) during switching, mainly due to the complexity caused by the charge trapping effect.
By constructing a voltage feedback circuit, a variable voltage is provided to the drain resistor in the circuit model of HEMT, making the drain resistor a variable resistor, thereby dynamically changing its resistance value. This variable voltage is related to the gate voltage and drain voltage of the HEMT, simulating the charge trapping effect during the switching process.
Accurate simulation of the change of HEMT on-resistance is achieved, which can more truly reflect the charge trapping effect of HEMT during the switching process, and improve the accuracy of the circuit model.
Smart Images
Figure CN119476159A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the technical field of semiconductor devices, and in particular to a simulation method, device and apparatus for a high electron mobility transistor (HEMT). Background Art
[0002] HEMT is a type of field effect transistor and is widely used in various power electronic devices.
[0003] Due to the charge trapping effect of HEMT during the switching process, the on-resistance of HEMT changes dynamically. It is difficult for the circuit model of HEMT in the related art to accurately simulate the change of the on-resistance of HEMT. Summary of the invention
[0004] The embodiments of the present disclosure provide a method, device and apparatus for simulating a HEMT, which can accurately simulate the change of the on-resistance of the HEMT. The technical solution is as follows:
[0005] On the one hand, a simulation method of a HEMT is provided, the simulation method comprising: obtaining a circuit model of a high electron mobility transistor, the circuit model comprising a triode and a drain resistor, the drain resistor being connected to the drain of the triode; constructing a voltage feedback circuit, the voltage feedback circuit being used to provide a variable voltage to the drain resistor so that the drain resistor is a variable resistor, the variable voltage being related to a gate voltage and a drain voltage of the high electron mobility transistor; and determining the resistance value of the drain resistor according to the variable voltage.
[0006] In one possible implementation, the voltage feedback circuit includes: a first constant current source and a first RC network, the first RC network includes a first feedback resistor and a first feedback capacitor connected in parallel, the two ends of the first RC network are respectively connected to the first constant current source, and the output current value of the first constant current source is related to the gate voltage and drain voltage of the high electron mobility transistor.
[0007] Optionally, the output current value of the first constant current source satisfies the following formula with the gate voltage and the drain voltage of the high electron mobility transistor:
[0008] Itrap=I0exp(A*Vg+B*Vd)
[0009] Wherein, Itrap represents the output current value of the first constant current source, exp(…) represents the natural exponential function, Vg represents the gate voltage of the high electron mobility transistor, Vd represents the drain voltage of the high electron mobility transistor, and I0, A and B are all fitting parameters.
[0010] In another possible implementation, the voltage feedback circuit includes a second constant current source, a third constant current source, a second RC network and a third RC network; the second RC network includes a second feedback resistor and a second feedback capacitor connected in parallel, the two ends of the second RC network are respectively connected to the second constant current source, and the output current value of the second constant current source is related to the gate voltage of the high electron mobility transistor; the third RC network includes a third feedback resistor and a third feedback capacitor connected in parallel, the two ends of the third RC network are respectively connected to the third constant current source, and the output current value of the third constant current source is related to the drain voltage of the high electron mobility transistor.
[0011] Optionally, the output current value of the second constant current source and the gate voltage of the high electron mobility transistor satisfy the following formula:
[0012] Itrap1=I1exp(A*Vg)
[0013] The output current value of the third constant current source and the drain voltage of the high electron mobility transistor satisfy the following formula:
[0014] Itrap2=I2exp(B*Vd)
[0015] Among them, Itrap1 represents the output current value of the second constant current source, Itrap2 represents the output current value of the third constant current source, exp(…) represents the natural exponential function, Vg represents the gate voltage of the high electron mobility transistor, Vd represents the drain voltage of the high electron mobility transistor, and I1, I2, A and B are all fitting parameters.
[0016] Optionally, determining the resistance value of the drain resistor according to the variable voltage includes:
[0017] The resistance value of the drain resistor is determined according to the following formula:
[0018] Rd=Rd0+k*Vtrap
[0019] Wherein, Rd represents the resistance value of the drain resistor, Vtrap represents the charging voltage of the first RC network, and k is a fitting parameter.
[0020] Optionally, determining the resistance value of the drain resistor according to the variable voltage includes:
[0021] The resistance value of the drain resistor is determined according to the following formula:
[0022] Rd=Rd0-k1*Vtrap1+k2*Vtrap2
[0023] Wherein, Rd represents the resistance value of the drain resistor, Vtrap1 represents the charging voltage of the second RC network, Vtrap2 represents the charging voltage of the third RC network, and k1 and k2 are fitting parameters.
[0024] Optionally, the simulation method further includes: acquiring multiple sets of test data of the high electron mobility transistor under a test pulse signal, each set of the test data being used to indicate the source-drain voltage and drain resistance of the high electron mobility transistor; and performing fitting using the multiple sets of test data to obtain the fitting parameters.
[0025] In a second aspect, a simulation device of a HEMT is provided, the simulation device comprising: an acquisition module, used to acquire a circuit model of a high electron mobility transistor, the circuit model comprising a transistor and a drain resistor, the drain resistor being connected to the drain of the transistor; a construction module, used to construct a voltage feedback circuit, the voltage feedback circuit being used to provide a variable voltage to the drain resistor so that the drain resistor is a variable resistor, the variable voltage being related to the gate voltage and the drain voltage of the high electron mobility transistor; and a determination module, used to determine the resistance value of the drain resistor according to the variable voltage.
[0026] In a third aspect, a computer device is provided, comprising: a processor and a memory, wherein the processor is used to execute at least one instruction in the memory to implement any of the aforementioned simulation methods.
[0027] The technical solution provided by the embodiments of the present disclosure has the following beneficial effects:
[0028] In the embodiment of the present disclosure, a variable voltage is provided to the drain resistor in the circuit model of the HEMT through a voltage feedback circuit, so that the drain resistor is a variable resistor, so that the resistance value of the drain resistor can be dynamically changed. The variable voltage is used to simulate the charge capture effect during the switching process of the HEMT, and the charge capture effect is usually related to the gate voltage and drain voltage of the HEMT. The variable voltage is also related to the gate voltage and drain voltage of the HEMT, so that the circuit model of the HEMT can simulate the change of the on-resistance of the HEMT. BRIEF DESCRIPTION OF THE DRAWINGS
[0029] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0030] Figure 1 is a structural schematic diagram of a HEMT provided by an embodiment of the present disclosure;
[0031] Figure 2 is a flow chart of a HEMT simulation method provided by an embodiment of the present disclosure;
[0032] Figure 3 is a schematic structural diagram of an analog circuit of a HEMT provided by an embodiment of the present disclosure;
[0033] Figure 4 is a schematic structural diagram of another HEMT analog circuit provided by an embodiment of the present disclosure;
[0034] Figure 5 is a structural schematic diagram of a test circuit provided by an embodiment of the present disclosure;
[0035] Figure 6 is a comparison chart of the simulation method provided by the embodiment of the present disclosure and the measured data;
[0036] Figure 7 is a structural schematic diagram of a HEMT simulation device provided by an embodiment of the present disclosure;
[0037] Figure 8 It is a structural diagram of a computer device provided in an embodiment of the present disclosure.
[0038] Reference numerals:
[0039] 1: substrate; 2: GaN layer; 3: AlGaN layer; 4: electrode layer;
[0040] 41: source; 42: drain; 43: gate. DETAILED DESCRIPTION
[0041] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.
[0042] Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by persons of ordinary skill in the field to which the present disclosure belongs. The words "first", "second", "third" and similar words used in the patent application specification and claims of the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one" or "one" do not indicate a quantitative limitation, but indicate the existence of at least one. Words such as "include" and similar words mean that the elements or objects appearing before "include" include the elements or objects listed after "include" and their equivalents, and do not exclude other elements or objects. Words such as "connect" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", etc. are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.
[0043] To facilitate understanding of the embodiments of the present disclosure, a gallium nitride (GaN)-based HEMT is taken as an example to briefly introduce the structure and working principle of the HEMT.
[0044] Figure 1 This is a schematic diagram of the structure of a GaN-based HEMT. Figure 1 As shown, the GaN-based HEMT includes a substrate 1 and a GaN layer 2, an AlGaN layer 3 and an electrode layer 4 stacked on the substrate in sequence. The electrode layer 4 includes a source 41, a drain 42 and a gate 43, and the gate 43 is located between the source 41 and the drain 42. Among them, the GaN layer 2 and the AlGaN layer 3 form a heterojunction.
[0045] When the GaN-based HEMT is working, the source-drain voltage generates a transverse electric field in the channel. Under the action of the transverse electric field, the two-dimensional electron gas moves along the heterojunction interface to generate a drain current. The gate 43 is in Schottky contact with the AlGaN layer 3. By controlling the gate voltage, the depth of the potential well in the heterojunction can be controlled, and the size of the two-dimensional electron gas surface density in the channel can be changed, thereby controlling the size of the drain current.
[0046] It should be noted that Figure 1 The structure in the figure is only an example, and the GaN-based HEMT may include more layer structures, which is not limited in the embodiments of the present disclosure.
[0047] HEMT has a charge trapping effect during the switching process, which causes the on-resistance (Rds_on) of HEMT to change dynamically. Since the trapped charge generated by the charge trapping effect is affected by many factors, such as the bias voltage, switching frequency, and temperature of HEMT, it is difficult to accurately determine the on-resistance of HEMT.
[0048] Through testing, it is found that in the actual charge capture process, the Rds_on of the HEMT will gradually increase until it reaches a constant value. In order to accurately simulate the change of the on-resistance of the HEMT, the embodiment of the present disclosure provides a variable voltage acting on the drain resistance of the HEMT through a voltage feedback circuit to simulate the charge capture effect during the operation of the HEMT.
[0049] Figure 2 FIG. 1 is a flow chart of a HEMT simulation method provided by an embodiment of the present disclosure. Figure 2 As shown, the method includes:
[0050] In S101 , a circuit model of the HEMT is acquired.
[0051] Figure 3 and Figure 4 They are schematic diagrams of the structure of an analog circuit of a HEMT provided by an embodiment of the present disclosure. Figure 3 and Figure 4 As shown, in the simulation circuit, the circuit model of HEMT includes a transistor T, a source resistor Rs and a drain resistor Rd, one end of the source resistor Rs is connected to the source of the transistor T, and the drain resistor Rd is connected to the drain of the transistor T.
[0052] In some examples, the circuit model only includes a transistor T, a source resistor Rs, and a drain resistor Rd, but does not include other electronic components. This circuit model can be called a compact model because it includes a small number of electronic components.
[0053] In other examples, the circuit model only includes the transistor T and the drain resistor Rd, but does not include other electronic components.
[0054] In some other examples, in addition to the transistor T, the source resistor Rs and the drain resistor Rd, the circuit model also includes other electronic components, including but not limited to capacitors, resistors, inductors and the like.
[0055] During implementation, at least one circuit model of the HEMT may be pre-stored, and one circuit model may be selected from the stored circuit models.
[0056] In S102 , a voltage feedback circuit is constructed, and the voltage feedback circuit is used to provide a variable voltage to the drain resistor, so that the drain resistor is a variable resistor.
[0057] The variable voltage provided by the voltage feedback circuit is related to the gate voltage and drain voltage of the HEMT.
[0058] In a first possible implementation, if Figure 3As shown, the voltage feedback circuit includes a first constant current source and a first RC network, and the first RC network includes a first feedback resistor Rt and a first feedback capacitor Ct connected in parallel. The two ends of the first RC network are respectively connected to the first constant current source to form a loop.
[0059] The output current value of the first constant current source is related to the gate voltage and the drain voltage of the HEMT, that is, the output current value of the first constant current source can be expressed as a function related to the gate voltage and the drain voltage of the HEMT.
[0060] For example, the output current value of the first constant current source satisfies the following formula (1) with respect to the gate voltage and drain voltage of the HEMT:
[0061] Itrap=I0exp(A*Vg+B*Vd) (1)
[0062] In formula (1), Itrap represents the output current value of the first constant current source, exp(…) represents the natural exponential function, that is, the exponential function with the natural constant e as the base, Vg represents the gate voltage of the HEMT, and Vd represents the drain voltage of the HEMT. I0 is the reference current, A is the influence coefficient of the gate voltage, and B is the influence coefficient of the drain voltage. Among them, Vg and Vd are test values, and I0, A and B are all fitting parameters.
[0063] In the first possible implementation manner, the variable voltage is positively correlated with the charging time of the first RC network, and is positively correlated with the output current value of the first constant current source.
[0064] In a second possible implementation, if Figure 4 As shown, the voltage feedback circuit includes a second constant current source, a third constant current source, a second RC network and a third RC network. The second RC network includes a second feedback resistor Rt1 and a second feedback capacitor Ct1 connected in parallel. The two ends of the second RC network are respectively connected to the second constant current source to form a loop. The third RC network includes a third feedback resistor Rt2 and a third feedback capacitor Ct2 connected in parallel. The two ends of the third RC network are respectively connected to the third constant current source to form a loop.
[0065] The output current value of the second constant current source is related to the gate voltage of the HEMT, and the output current value of the third constant current source is related to the drain voltage of the HEMT. That is, the output current value of the second constant current source can be expressed as a function related to the gate voltage of the HEMT, and the output current value of the third constant current source can be expressed as a function related to the drain voltage of the HEMT.
[0066] For example, the output current value of the second constant current source and the gate voltage of the HEMT satisfy the following formula (2), and the output current value of the third constant current source and the drain voltage of the HEMT satisfy the following formula (3).
[0067] Itrap1=I1exp(A*Vg) (2)
[0068] Itrap2=I2exp(B*Vd) (3)
[0069] In formulas (2) and (3), Itrap1 represents the output current value of the second constant current source, Itrap2 represents the output current value of the third constant current source, exp(…) represents the natural exponential function, Vg represents the gate voltage of the HEMT, and Vd represents the drain voltage of the HEMT. I1 and I2 are reference currents, A is the influence coefficient of the gate voltage, and B is the influence coefficient of the drain voltage. Vg and Vd are test values, and I1, I2, A, and B are fitting parameters.
[0070] In the second possible implementation, the variable voltage is positively correlated with the charging time of the second RC network, and positively correlated with the output current value of the second constant current source; the variable voltage is negatively correlated with the charging time of the third RC network, and negatively correlated with the output current value of the third constant current source.
[0071] When a constant current source is used to charge the RC network, the amount of charge stored in the RC network is proportional to the charging time. That is, the longer the charging time, the greater the charging voltage of the RC network; conversely, the shorter the charging time, the smaller the charging voltage of the RC network.
[0072] In a first possible implementation manner, the charging voltage of the first RC network and the output current value of the first constant current source satisfy the following formula (4):
[0073] CVtrap=t*Itrap (4)
[0074] In formula (4), Itrap represents the output current value of the first constant current source, t represents the charging time of the first RC network, C represents the capacitance value of the first feedback capacitor, and Vtrap represents the charging voltage of the first RC network.
[0075] In the embodiment of the present disclosure, the maximum value of t may be equal to the pulse width of the test pulse signal. Exemplarily, the value range of t is 1 μs-100 μs.
[0076] In a second possible implementation, the relationship between the charging voltage of the second RC network and the output current value of the second constant current source and the relationship between the charging voltage of the third RC network and the output current value of the third constant current source can refer to formula (4), which will not be repeated here.
[0077] In S103, the resistance value of the drain resistor is determined according to the variable voltage provided by the voltage feedback circuit.
[0078] With respect to the first possible implementation manner, S103 includes: determining the resistance value of the drain resistor according to the following formula (5):
[0079] Rd=Rd0+k*Vtrap (5)
[0080] In formula (5), Rd represents the resistance of the drain resistor, Rd0 represents the resistance reference value, Vtrap represents the charging voltage of the first RC network, and k is the voltage influence coefficient. Rd0 and k are both fitting parameters. Among them, k*Vtrap is the voltage influence coefficient resistance, that is, the resistance change caused by the variable voltage.
[0081] With respect to the second possible implementation manner, S103 includes:
[0082] According to the following formula (6), the resistance value of the drain resistor is determined:
[0083] Rd=Rd0-k1*Vtrap1+k2*Vtrap2 (6)
[0084] In formula (6), Rd represents the resistance of the drain resistor, Rd0 represents the resistance reference value, Vtrap1 represents the charging voltage of the second RC network, Vtrap2 represents the charging voltage of the third RC network, k1 and k2 are the gate voltage influence coefficient and the drain voltage influence coefficient, respectively. Rd0, k1 and k2 are all fitting parameters. -k1*Vtrap1+k2*Vtrap2 is the voltage influence coefficient resistance, that is, the resistance change caused by the variable voltage.
[0085] Since the variable voltage is positively correlated with the charging time of the second RC network and positively correlated with the output current value of the second constant current source; and the variable voltage is negatively correlated with the charging time of the third RC network and negatively correlated with the output current value of the third constant current source, k1 and k2 are both positive numbers.
[0086] In the embodiment of the present disclosure, a variable voltage is provided to the drain resistor in the circuit model of the HEMT through a voltage feedback circuit, so that the drain resistor is a variable resistor, so that the resistance value of the drain resistor can be dynamically changed. The variable voltage is used to simulate the charge capture effect during the switching process of the HEMT, and the charge capture effect is usually related to the gate voltage and drain voltage of the HEMT. The variable voltage is also related to the gate voltage and drain voltage of the HEMT, so that the circuit model of the HEMT can simulate the change of the on-resistance of the HEMT.
[0087] Moreover, the number of fitting parameters in the second possible implementation is greater than that in the first possible implementation, and therefore the simulation result is more accurate, while the first possible implementation is simpler to implement.
[0088] The following describes how to obtain the aforementioned fitting parameters.
[0089] First, a plurality of test data of the high electron mobility transistor under a test pulse signal are obtained; then, the plurality of test data are used for fitting to obtain the fitting parameters.
[0090] Each set of test data is used to indicate the source-drain voltage and drain resistance of the HEMT. For example, each set of test data includes the source-drain voltage VDS and the drain current IDS, and the drain resistance Rd can be calculated according to the drain current IDS and the source-drain voltage VDS.
[0091] For example, it is possible to use Figure 5 The test circuit shown in the figure obtains current-voltage test data. Figure 5 As shown, the test circuit includes a HEMT device (shown in a dotted box), a driving unit and a current detection unit. The source VS of the HEMT device is connected to the power supply terminal VBUS, and the driving unit is connected to the gate VG of the HEMT device, and is used to provide a gate voltage to the gate VG of the HEMT device under the action of a test pulse signal, so that the source VS and drain VD of the HEMT device are turned on. The current detection unit is respectively connected to the drain VD of the HEMT device, the driving unit and the ground, and is used to detect the drain current IDS (i.e., the source-drain conduction current).
[0092] Optionally, the test circuit further includes a load resistor Rp connected in series between the power terminal VBUS and the source VS of the HEMT device.
[0093] In the embodiment of the present disclosure, the test pulse signal is a pulse-width modulation (PWM) signal, and the duty cycle of the PWM signal can be set according to actual needs. Exemplarily, when the test pulse signal is at a high level, the HEMT device is turned on, and the corresponding source-drain voltage and drain current are measured at a set time interval. The source-drain voltage divided by the drain current is the on-resistance of the HEMT.
[0094] Substitute the test data under the test pulse signal into the above formula to obtain the fitting parameters of each formula.
[0095] In some examples, in a first possible implementation, according to test data, the fitting parameters obtained are I0=1A, A=0, Vg=0, B=0.25, Vd=0.0132, k=0.0113. Rt=2.27Ω, Ct=1uF in the first RC network.
[0096] Figure 6 It is a comparison chart of the simulation method provided by the embodiment of the present disclosure and the measured data. Figure 6 In the figure, the horizontal axis is the number of test points, that is, the number of test data sets obtained when the test pulse signal is at a high level. At the same time interval, the longer the duration of the high level is, the more test points there are; the vertical axis is the normalized on-resistance. Curve S1 is a fitting curve of the on-resistance simulated by the method provided in the embodiment of the present disclosure, and S2 is the actual test result. Figure 6 It can be seen that the fitting curve S1 is close to the test result S2, which shows that the method provided by the embodiment of the present disclosure can accurately simulate the change of the on-resistance of the HEMT.
[0097] The simulation circuit constructed by the simulation method provided by the embodiment of the present disclosure can be applied to various circuit simulators to help designers accurately obtain the on-resistance of the HEMT during the simulation process.
[0098] Figure 7 Schematic diagram of a HEMT simulation device provided by an embodiment of the present disclosure. Figure 7 As shown, the simulation device 700 includes: an acquisition module 701, a construction module 702 and a determination module 703. The acquisition module 701 is used to acquire a circuit model of a high electron mobility transistor, the circuit model includes a transistor and a drain resistor, and the drain resistor is connected to the drain of the transistor; the construction module 702 is used to construct a voltage feedback circuit, the voltage feedback circuit is used to provide a variable voltage to the drain resistor, so that the drain resistor is a variable resistor, and the variable voltage is related to the gate voltage and the drain voltage of the high electron mobility transistor; the determination module 703 is used to determine the resistance value of the drain resistor according to the variable voltage.
[0099] Optionally, two possible implementations of the voltage feedback circuit refer to the above method embodiments. For the first possible implementation, the determination module 703 is used to determine the resistance value of the drain resistor according to the above formula (5). For the second possible implementation, the determination module 703 is used to determine the resistance value of the drain resistor according to the above formula (6).
[0100] It should be noted that: the HEMT simulation method provided in the above embodiment only uses the division of the above functional modules as an example when simulating HEMT. In actual applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the device is divided into different functional modules to complete all or part of the functions described above. In addition, the HEMT simulation device provided in the above embodiment and the HEMT simulation method embodiment belong to the same concept, and the specific implementation process is detailed in the method embodiment, which will not be described in detail here.
[0101] Figure 8Schematic diagram of a computer device provided by an embodiment of the present disclosure. Figure 8 As shown, the computer device 800 may include a processor 801 and a memory 802. The memory 802 is connected to the processor 801. The memory 802 may be used to store at least one instruction, and the processor 801 may be used to execute the at least one instruction to implement each step in the above method.
[0102] In addition, the memory 802 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, and the volatile or non-volatile storage device includes but is not limited to: a magnetic disk or an optical disk, an electrically erasable programmable read-only memory (EEPROM), an erasable programmable read-only memory (EPROM), a static random access memory (SRAM), a read-only memory (ROM), a magnetic memory, a flash memory, and a programmable read-only memory (PROM).
[0103] The embodiment of the present disclosure further provides a computer-readable storage medium storing computer instructions. When the computer instructions stored in the computer-readable storage medium are executed by a computer device, the computer device executes the HEMT simulation method provided by the above method embodiment.
[0104] The embodiment of the present disclosure further provides a computer program product, which includes one or more computer program instructions. When the computer program instructions are loaded and executed by a computer, the computer executes the HEMT simulation method provided by the above method embodiment.
[0105] The above description does not limit the present disclosure in any form. Although the present disclosure has been disclosed as above through the embodiments, it is not used to limit the present disclosure. Any technician familiar with the profession can make some changes or modifications to equivalent embodiments of equivalent changes using the technical contents disclosed above without departing from the scope of the technical solution of the present disclosure. However, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present disclosure without departing from the content of the technical solution of the present disclosure still falls within the scope of the technical solution of the present disclosure.
Claims
1. A method for simulating a high electron mobility transistor, characterized in that: include: Acquire a circuit model of a high electron mobility transistor, wherein the circuit model includes a transistor and a drain resistor, wherein the drain resistor is connected to the drain of the transistor; Constructing a voltage feedback circuit, the voltage feedback circuit is used to provide a variable voltage to the drain resistor so that the drain resistor is a variable resistor, and the variable voltage is related to the gate voltage and the drain voltage of the high electron mobility transistor; The resistance value of the drain resistor is determined according to the variable voltage.
2. The simulation method according to claim 1, characterized in that: The voltage feedback circuit includes: a first constant current source and a first RC network, the first RC network includes a first feedback resistor and a first feedback capacitor connected in parallel, the two ends of the first RC network are respectively connected to the first constant current source, and the output current value of the first constant current source is related to the gate voltage and drain voltage of the high electron mobility transistor.
3. The simulation method according to claim 2, characterized in that: The output current value of the first constant current source and the gate voltage and drain voltage of the high electron mobility transistor satisfy the following formula: Itrap=I0exp(A*Vg+B*Vd) Among them, Itrap represents the output current value of the first constant current source, exp(…) represents the natural exponential function, Vg represents the gate voltage of the high electron mobility transistor, Vd represents the drain voltage of the high electron mobility transistor, I0 is the reference current, A is the influence coefficient of the gate voltage, B is the influence coefficient of the drain voltage, and I0, A and B are all fitting parameters.
4. The simulation method according to claim 1, characterized in that: The voltage feedback circuit includes a second constant current source, a third constant current source, a second RC network and a third RC network; The second RC network includes a second feedback resistor and a second feedback capacitor connected in parallel, two ends of the second RC network are respectively connected to the second constant current source, and an output current value of the second constant current source is related to a gate voltage of the high electron mobility transistor; The third RC network includes a third feedback resistor and a third feedback capacitor connected in parallel, and both ends of the third RC network are respectively connected to the third constant current source, and the output current value of the third constant current source is related to the drain voltage of the high electron mobility transistor.
5. The simulation method according to claim 4, characterized in that: The output current value of the second constant current source and the gate voltage of the high electron mobility transistor satisfy the following formula: Itrap1=I1exp(A*Vg) The output current value of the third constant current source and the drain voltage of the high electron mobility transistor satisfy the following formula: Itrap2=I2exp(B*Vd) Among them, Itrap1 represents the output current value of the second constant current source, Itrap2 represents the output current value of the third constant current source, exp(…) represents the natural exponential function, Vg represents the gate voltage of the high electron mobility transistor, Vd represents the drain voltage of the high electron mobility transistor, I1 and I2 are reference currents, A is the influence coefficient of the gate voltage, B is the influence coefficient of the drain voltage, and I1, I2, A and B are all fitting parameters.
6. The simulation method according to claim 3, characterized in that: The step of determining the resistance value of the drain resistor according to the variable voltage comprises: The resistance value of the drain resistor is determined according to the following formula: Rd=Rd0+k*Vtrap Wherein, Rd represents the resistance value of the drain resistor, Vtrap represents the charging voltage of the first RC network, Rd0 represents the resistance reference value, k is the voltage influence coefficient, and Rd0 and k are fitting parameters.
7. The simulation method according to claim 5, characterized in that: The step of determining the resistance value of the drain resistor according to the variable voltage comprises: The resistance value of the drain resistor is determined according to the following formula: Rd=Rd0-k1*Vtrap1+k2*Vtrap2 Among them, Rd represents the resistance of the drain resistor, Vtrap1 represents the charging voltage of the second RC network, Vtrap2 represents the charging voltage of the third RC network, Rd0 represents the resistance reference value, k1 and k2 are the gate voltage influence coefficient and the drain voltage influence coefficient respectively, and Rd0, k1 and k2 are fitting parameters.
8. The simulation method according to claim 6 or 7, characterized in that: Also includes: Acquire multiple groups of test data of the high electron mobility transistor under a test pulse signal, each group of the test data is used to indicate the source-drain voltage and drain resistance of the high electron mobility transistor; The plurality of test data sets are used for fitting to obtain the fitting parameters.
9. A high electron mobility transistor simulation device, characterized in that: include: An acquisition module, used for acquiring a circuit model of a high electron mobility transistor, wherein the circuit model includes a transistor and a drain resistor, and the drain resistor is connected to the drain of the transistor; A construction module, configured to construct a voltage feedback circuit, wherein the voltage feedback circuit is configured to provide a variable voltage to the drain resistor so that the drain resistor is a variable resistor, wherein the variable voltage is related to a gate voltage and a drain voltage of the high electron mobility transistor; A determination module is used to determine the resistance value of the drain resistor according to the variable voltage.
10. A computer device, characterized in that: include: A processor and a memory, wherein the processor is used to execute at least one instruction in the memory to implement the simulation method according to any one of claims 1 to 8.