Broadband receiving radio frequency front-end structure

Abstract

The invention provides a broadband receiving radio frequency front-end structure, which is characterized in that when the output of a power supply control module is power supply voltage Vdd, the output of an output bias control module is power supply voltage Vdd, the output of an input bias module is bias voltage Vb, and the output of a grounding control module is a grounding end GND, the structure is in a low-noise amplifier working mode; when the output of the power supply control module is a grounding end GND, the output of the output bias control module is a power supply voltage Vdd, the output of the input bias module is the power supply voltage Vdd, and the output of the grounding control module is the grounding end GND, a through switch receiving working mode is realized; when the output of the power supply control module is a power supply voltage Vdd, the output of the output bias control module is a grounding end GND, the output of the input bias module is the grounding end GND, and the output of the grounding control module is the power supply voltage Vdd, the broadband receiving radio frequency front end structure is in a diversity receiving switch turn-off working mode. According to the invention, system complexity can be improved, space and cost can be saved, power consumption and radio frequency signal chain paths can be optimized, and insertion loss and noise characteristics can be improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a broadband receiving radio frequency front-end structure. Background Art

[0002] With the development and application of communication technology, the RF front-end needs to support more and wider frequency bands, and its front-end RF structure is becoming more and more complex, requiring the RF device design to support multi-mode and multi-frequency integration, device function reuse and digital reconfigurable applications, so as to reduce the complexity of the RF front-end structure, optimize RF performance and power consumption, reduce device costs and save PCB space.

[0003] See also Figure 1 The broadband receiving RF front-end structure in the prior art is mainly composed of a broadband common-gate low-noise amplifier with a bypass switch and a diversity receiving switch. Each functional module is constructed separately, and the system structure is complex, which is not conducive to power consumption optimization, system integration, device function reuse and digital reconfiguration to reduce costs. At the same time, the RF signal link is long, and the insertion loss and noise are large.

[0004] In order to solve the above problems, it is necessary to propose a new broadband receiving RF front-end structure. Summary of the invention

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a broadband receiving RF front-end structure to solve the problems in the prior art that each functional module of the broadband receiving RF front-end structure is composed separately, the system structure is complex, it is not conducive to power consumption optimization, system integration and device function reuse and digital reconfiguration to reduce costs, and the RF signal link is long, and the insertion loss and noise are large.

[0006] To achieve the above objectives and other related objectives, the present invention provides a broadband receiving radio frequency front-end structure, including:

[0007] An input MOS tube and an output MOS tube, wherein the drain of the output MOS tube is connected to the source of the output MOS tube;

[0008] The source of the input MOS tube is connected to a first inductor, the drain of the output MOS tube is connected to a second inductor, the radio frequency input signal RFin is connected between the drain of the input MOS tube and the first end of the first inductor through a first input matching network, and the drain of the output MOS tube and the first end of the second inductor are connected to a second input matching network;

[0009] Power supply control module, input bias module, output bias control module, ground control module; wherein,

[0010] The power control module selects the power supply voltage Vdd or the ground terminal GND to be connected to the second end of the second inductor according to the control signal;

[0011] The output bias control module selects the power supply voltage Vdd or the ground terminal GND to be connected to the gate of the output MOS tube through the first bias according to the control signal;

[0012] The input bias module selects the power supply voltage Vdd, the bias voltage Vb or the ground terminal GND according to the control signal and connects to the gate of the input MOS tube through the second bias;

[0013] The ground control module selects the power supply voltage Vdd or the ground terminal GND to be connected to the second end of the first inductor according to the control signal;

[0014] When the power control module outputs the power voltage Vdd, the output bias control module outputs the power voltage Vdd, the input bias module outputs the voltage Vb, and the ground control module outputs the ground terminal GND, the broadband receiving RF front-end structure is in the low noise amplifier working mode;

[0015] When the power control module outputs the ground terminal GND, the output bias control module outputs the power supply voltage Vdd, the input bias module outputs the power supply voltage Vdd, the ground control module outputs the ground terminal GND, and the broadband receiving RF front-end structure is a through switch receiving working mode;

[0016] When the power control module outputs the power supply voltage Vdd, the output bias control module outputs the ground terminal GND, the input bias module outputs the ground terminal GND, the ground control module outputs the power supply voltage Vdd, and the broadband receiving RF front-end structure is in the diversity receiving switch off working mode.

[0017] Preferably, the power control module comprises a first inverter, an input terminal of which is connected to the first control signal, an output terminal of which is connected to the second end of the second inductor, a power terminal of which is connected to the power supply voltage Vdd, and a ground terminal of which is grounded.

[0018] Preferably, the input bias module includes second to fifth inverters; the input end of the second inverter is connected to the first control signal, the output end of the second inverter is connected to the input end of the third inverter, the output end of the third inverter is connected to the gate of the input MOS tube, and the power supply end of the third inverter is connected to the power supply voltage Vdd; the input end of the fourth inverter is connected to the second control signal, the output end of the fourth inverter is connected to the input end of the fifth inverter, the output end of the fifth inverter is connected to the ground end of the third inverter, the power supply end of the fifth inverter is connected to the bias voltage Vb, and the ground end of the fifth inverter is grounded.

[0019] Preferably, the output bias module is an OR gate, two input ends of which are respectively connected to the first and second control signals, and an output end of which is connected to the gate of the output MOS tube.

[0020] Preferably, the grounding control module is a sixth inverter, an input end of which is connected to the second control signal, and an output end of which is connected to the second end of the first inductor.

[0021] Preferably, when the first control signal is at a low level and the second control signal is at a high level, the power control module outputs the power supply voltage Vdd, the output bias control module outputs the power supply voltage Vdd, the input bias module outputs the voltage Vb, the ground control module outputs the ground terminal GND, and the broadband receiving RF front-end structure is in a low noise amplifier operating mode.

[0022] Preferably, when the first and second control signals are both at high levels, the power control module outputs the ground terminal GND, the output bias control module outputs the power supply voltage Vdd, the input bias module outputs the power supply voltage Vdd, the ground control module outputs the ground terminal GND, and the broadband receiving RF front-end structure is a direct-switch receiving working mode.

[0023] Preferably, when the first and second control signals are both at low levels, the power control module outputs the power supply voltage Vdd, the output bias control module outputs the ground terminal GND, the input bias module outputs the ground terminal GND, the ground control module outputs the power supply voltage Vdd, and the broadband receiving RF front-end structure is in the diversity receiving switch-off working mode.

[0024] As described above, the broadband receiving radio frequency front-end structure of the present invention has the following beneficial effects:

[0025] The present invention performs coordinated optimization design of power supply, source-level grounding, and input- and output-level bias control of a common-gate broadband low-noise amplifier, and can realize device function multiplexing, digital reconstruction of the circuit structure, broadband low-noise amplifier reception, pass-through switch reception, and diversity reception switch shutdown working modes of an equivalent broadband receiving RF front-end structure, improve system complexity, save space and cost, optimize power consumption and RF signal chain path, and improve insertion loss and noise characteristics. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 Shown is a schematic diagram of the broadband receiving radio frequency front end structure of the prior art;

[0027] Figure 2 Shown is a schematic diagram of the structure of a broadband receiving radio frequency front-end module of the present invention;

[0028] Figure 3 Shown is a schematic diagram of the structure of a broadband receiving radio frequency front-end circuit of the present invention;

[0029] Figure 4 Shown is a schematic diagram of a method for adjusting the working mode using the first and second control signals of the present invention;

[0030] Figure 5Shown are schematic diagrams of three working modes of the present invention;

[0031] Figure 6 Shown is a functional verification schematic diagram of the broadband receiving RF front-end circuit of the present invention. DETAILED DESCRIPTION

[0032] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0033] See also Figure 2 The present invention provides a broadband receiving radio frequency front-end structure, comprising:

[0034] An input MOS tube and an output MOS tube, wherein the drain of the output MOS tube is connected to the source of the output MOS tube;

[0035] The source of the input MOS tube is connected to a first inductor, the drain of the output MOS tube is connected to a second inductor, the radio frequency input signal RFin is connected between the drain of the input MOS tube and the first end of the first inductor through a first input matching network, and the drain of the output MOS tube and the first end of the second inductor are connected to a second input matching network;

[0036] Power supply control module, input bias module, output bias control module, ground control module; wherein,

[0037] The power control module selects the power supply voltage Vdd or the ground terminal GND to be connected to the second end of the second inductor according to the control signal;

[0038] The output bias control module selects the power supply voltage Vdd or the ground terminal GND to be connected to the gate of the output MOS tube through the first bias according to the control signal;

[0039] The input bias module selects the power supply voltage Vdd, the bias voltage Vb or the ground terminal GND according to the control signal and connects it to the gate of the input MOS tube through the second bias; it should be noted that the first and second biases are set according to actual needs, and the resistance values ​​of the bias resistors do not need to be equal;

[0040] The ground control module selects the power supply voltage Vdd or the ground terminal GND to be connected to the second end of the first inductor according to the control signal;

[0041] When the power control module outputs the power voltage Vdd, the output bias control module outputs the power voltage Vdd, the input bias module outputs the voltage Vb, and the ground control module outputs the ground terminal GND, the broadband receiving RF front-end structure is in the low noise amplifier working mode;

[0042] When the power control module outputs the ground terminal GND, the output bias control module outputs the power supply voltage Vdd, the input bias module outputs the power supply voltage Vdd, the ground control module outputs the ground terminal GND, and the broadband receiving RF front-end structure is a through switch receiving working mode;

[0043] When the power control module outputs the power supply voltage Vdd, the output bias control module outputs the ground terminal GND, the input bias module outputs the ground terminal GND, the ground control module outputs the power supply voltage Vdd, and the broadband receiving RF front-end structure is in the diversity receiving switch off working mode.

[0044] The coordinated optimization design of the power supply, source grounding, and input and output stage bias control of the common-gate broadband low-noise amplifier can realize device function reuse, digital reconstruction of the circuit structure, broadband low-noise amplifier reception, pass-through switch reception, and diversity reception switch shutdown working modes of the equivalent broadband receiving RF front-end structure, improve system complexity, save space and cost, optimize power consumption and RF signal chain path, and improve insertion loss and noise characteristics.

[0045] Specifically, the following section lists a circuit structure of an embodiment for detailed description:

[0046] Figure 3 shows the specific structure of each module in an embodiment, Figure 4 The method of adjusting the working mode by the first and second control signals in this embodiment is shown. Figure 5 The circuit structures of three working modes are shown.

[0047] In the embodiment of the present invention, the power control module comprises a first inverter 101, whose input terminal is connected to the first control signal A, the output terminal is connected to the second end of the second inductor, the power terminal is connected to the power supply voltage Vdd, and the ground terminal is grounded.

[0048] In an embodiment of the present invention, the input bias module includes second to fifth inverters; the input terminal of the second inverter 102 is connected to the first control signal A, the output terminal of the second inverter 102 is connected to the input terminal of the third inverter 103, the output terminal of the third inverter 102 is connected to the gate of the input MOS tube, and the power terminal of the third inverter 102 is connected to the power supply voltage Vdd; the input terminal of the fourth inverter 104 is connected to the second control signal B, the output terminal of the fourth inverter 104 is connected to the input terminal of the fifth inverter 105, the output terminal of the fifth inverter 105 is connected to the ground terminal of the third inverter 103, the power terminal of the fifth inverter 105 is connected to the power supply voltage Vb, and the ground terminal of the fifth inverter 105 is grounded.

[0049] In an embodiment of the present invention, the output bias module is an OR gate, two input terminals of which are respectively connected to the first and second control signals, and an output terminal of which is connected to the gate of the output MOS tube.

[0050] In the embodiment of the present invention, the ground control module is a sixth inverter 106 , an input end of which is connected to the second control signal B, and an output end of which is connected to the second end of the first inductor.

[0051] In an embodiment of the present invention, when the first control signal A is at a low level and the second control signal B is at a high level, the power control module outputs the power supply voltage Vdd, the output bias control module outputs the power supply voltage Vdd, the input bias module outputs the voltage Vb, the ground control module outputs the ground terminal GND, and the broadband receiving RF front-end structure is in a low noise amplifier operating mode.

[0052] In an embodiment of the present invention, when the first and second control signals are both high level, the power control module outputs the ground terminal GND, the output bias control module outputs the power supply voltage Vdd, the input bias module outputs the power supply voltage Vdd, the ground control module outputs the ground terminal GND, and the broadband receiving RF front-end structure is a direct-switch receiving working mode.

[0053] In an embodiment of the present invention, when the first and second control signals are both at low levels, the power control module outputs the power supply voltage Vdd, the output bias control module outputs the ground terminal GND, the input bias module outputs the ground terminal GND, the ground control module outputs the power supply voltage Vdd, and the broadband receiving RF front-end structure is in the diversity receiving switch-off working mode.

[0054] See also Figure 6 , which shows the functional verification of the broadband receiving RF front-end circuit, and realizes the broadband low noise amplifier reception, direct switch reception and diversity reception switch shutdown working modes of the broadband receiving RF front-end structure through control.

[0055] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner. Therefore, the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0056] In summary, the present invention performs a coordinated optimization design of power supply, source-level grounding, and input and output-level bias control of a common-gate broadband low-noise amplifier, which can realize device function reuse, digital reconstruction of the circuit structure, broadband low-noise amplifier reception, direct switch reception, and diversity reception switch shutdown working modes of an equivalent broadband reception RF front-end structure, improve system complexity, save space and cost, optimize power consumption and RF signal chain path, and improve insertion loss and noise characteristics. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has a high industrial utilization value.

[0057] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A broadband receiving radio frequency front-end structure, characterized in that: include: An input MOS tube and an output MOS tube, wherein the drain of the output MOS tube is connected to the source of the output MOS tube; The source of the input MOS tube is connected to a first inductor, the drain of the output MOS tube is connected to a second inductor, the radio frequency input signal RFin is connected between the drain of the input MOS tube and the first end of the first inductor through a first input matching network, and the drain of the output MOS tube and the first end of the second inductor are connected to a second input matching network; Power supply control module, input bias module, output bias control module, ground control module; wherein, The power control module selects the power supply voltage Vdd or the ground terminal GND to be connected to the second end of the second inductor according to the control signal; The output bias control module selects the power supply voltage Vdd or the ground terminal GND to be connected to the gate of the output MOS tube through the first bias according to the control signal; The input bias module selects the power supply voltage Vdd, the bias voltage Vb or the ground terminal GND according to the control signal and connects to the gate of the input MOS tube through the second bias; The ground control module selects the power supply voltage Vdd or the ground terminal GND to be connected to the second end of the first inductor according to the control signal; When the power control module outputs the power supply voltage Vdd, the output bias control module outputs the power supply voltage Vdd, the input bias module outputs the voltage Vb, and the ground control module outputs the ground terminal GND, the broadband receiving RF front-end structure is in the low noise amplifier working mode; When the power control module outputs the ground terminal GND, the output bias control module outputs the power supply voltage Vdd, the input bias module outputs the power supply voltage Vdd, the ground control module outputs the ground terminal GND, and the broadband receiving RF front-end structure is a through switch receiving working mode; When the power control module outputs the power supply voltage Vdd, the output bias control module outputs the ground terminal GND, the input bias module outputs the ground terminal GND, the ground control module outputs the power supply voltage Vdd, and the broadband receiving RF front-end structure is in the diversity receiving switch off working mode.

2. The broadband receiving radio frequency front-end structure according to claim 1, characterized in that: The power control module comprises a first inverter, an input terminal of which is connected to a first control signal, an output terminal of which is connected to a second terminal of a second inductor, a power terminal of which is connected to a power supply voltage Vdd, and a ground terminal of which is grounded.

3. The broadband receiving radio frequency front-end structure according to claim 2, characterized in that: The input bias module includes second to fifth inverters; the input end of the second inverter is connected to the first control signal, the output end of the second inverter is connected to the input end of the third inverter, the output end of the third inverter is connected to the gate of the input MOS tube, and the power supply end of the third inverter is connected to the power supply voltage Vdd; the input end of the fourth inverter is connected to the second control signal, the output end of the fourth inverter is connected to the input end of the fifth inverter, the output end of the fifth inverter is connected to the ground end of the third inverter, the power supply end of the fifth inverter is connected to the bias voltage Vb, and the ground end of the fifth inverter is grounded.

4. The broadband receiving radio frequency front-end structure according to claim 3, characterized in that: The output bias module is an OR gate, two input ends of which are respectively connected to the first and second control signals, and an output end of which is connected to the gate of the output MOS tube.

5. The broadband receiving radio frequency front-end structure according to claim 4, characterized in that: The grounding control module is a sixth inverter, an input end of which is connected to the second control signal, and an output end of which is connected to the second end of the first inductor.

6. The broadband receiving radio frequency front-end structure according to claim 5, characterized in that: When the first control signal is at a low level and the second control signal is at a high level, the power control module outputs the power supply voltage Vdd, the output bias control module outputs the power supply voltage Vdd, the input bias module outputs the voltage Vb, the ground control module outputs the ground terminal GND, and the broadband receiving RF front-end structure is in a low noise amplifier operating mode.

7. The broadband receiving radio frequency front-end structure according to claim 5, characterized in that: When the first and second control signals are both at high levels, the power control module outputs the ground terminal GND, the output bias control module outputs the power supply voltage Vdd, the input bias module outputs the power supply voltage Vdd, the ground control module outputs the ground terminal GND, and the broadband receiving RF front-end structure is a direct-switch receiving working mode.

8. The broadband receiving radio frequency front-end structure according to claim 5, characterized in that: When the first and second control signals are both at low levels, the power control module outputs the power supply voltage Vdd, the output bias control module outputs the ground terminal GND, the input bias module outputs the ground terminal GND, the ground control module outputs the power supply voltage Vdd, and the broadband receiving RF front-end structure is in the diversity receiving switch shutdown working mode.

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