Self-powered building vibration sensing system based on triboelectric nanometer generator and synaptic transistor
By integrating triboelectric nanogenerators and synaptic transistors in building vibration sensing systems and combining one-dimensional convolutional neural networks, the limitations of traditional systems in data processing speed and energy efficiency are solved, efficient detection and evaluation of vibration signals of building materials and accurate classification and identification, and building safety management is promoted.
Patent Information
- Application Number
- CN202411567028.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-05
- Publication Date
- 2025-02-28
AI Technical Summary
Traditional structural health monitoring systems have limitations in data processing speed and energy efficiency, making it difficult to achieve cost-effective building safety management.
A self-powered building vibration sensing system based on triboelectric nanogenerators and synaptic transistors is adopted to detect and evaluate vibration signals in buildings by integrating self-powered triboelectric nanogenerators and high-sensitivity synaptic transistors, and a one-dimensional convolutional neural network is used to realize classified recognition of vibrations.
It realizes efficient detection and evaluation of vibration signals of building materials, improves the accuracy of classification and identification of vibration signals, provides a cost-effective solution, and promotes building safety management.
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Figure CN119533637A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical fields of electronic materials and devices and self-driven sensing, and in particular relates to a self-powered building vibration sensing system based on a triboelectric nanogenerator and a synaptic transistor. Background Art
[0002] Various sensor network building structural health monitoring systems have been developed. Among them, wireless vibration detection systems overcome the limitations of traditional wired systems for building vibration monitoring. In addition to large sensor equipment, traditional structural health monitoring systems also require complex storage and computing equipment for data analysis and decision-making. The traditional von Neumann architecture has limitations in data processing speed. Summary of the invention
[0003] Considering that the human brain exhibits high energy efficiency in the process of information processing, neuromorphic devices that mimic the functions of biological synapses have the advantages of low power consumption and high efficiency. Therefore, as data processing in self-powered sensing systems, they provide new cost-effective solutions for structural health monitoring and help promote building safety management.
[0004] To this end, the present invention provides a self-powered building vibration sensing system based on a triboelectric nanogenerator and a synaptic transistor, which can effectively detect and evaluate vibration signals in buildings by integrating a self-powered triboelectric nanogenerator and a highly sensitive synaptic transistor. The triboelectric nanogenerator has strong flexibility, high energy conversion efficiency, high output voltage, light weight, low manufacturing cost, high reliability and can be used as a vibration signal sensor, which is suitable for building vibration monitoring and detection and evaluation of vibration signals of building materials.
[0005] The design of the present invention consists of a high-sensitivity triboelectric nanogenerator and a field-effect synaptic transistor based on a polymer heterojunction. The improved triboelectric nanogenerator can respond to vibration signals quickly and accurately, and the prepared field-effect transistor has the basic function of a synapse. The triboelectric nanogenerator is a sandwich structure, which consists of a friction layer, an electrode, and a packaging layer from top to bottom. The organic field-effect synaptic transistor consists of a substrate with an insulating layer, an active layer, and a top electrode from bottom to top. The system is connected to an LED lamp to detect and alarm vibration signals. The present invention utilizes the output characteristics of the triboelectric nanogenerator and the memory characteristics of the synaptic device to detect and evaluate vibration signals of building materials, utilizes the system's adaptability to one-dimensional vibration signals, and uses a one-dimensional convolutional neural network to classify and identify vibrations with higher accuracy.
[0006] The present invention specifically adopts the following technical solutions: A self-powered building vibration sensing system based on a triboelectric nanogenerator and a synaptic transistor: comprising a triboelectric nanogenerator, an organic field effect synaptic transistor and an LED lamp; wherein the triboelectric nanogenerator is a sandwich structure, which comprises a friction layer, an electrode and a packaging layer from top to bottom; the organic field effect synaptic transistor is composed of a substrate with an insulating layer, an active layer and a top electrode from bottom to top; the LED lamp is connected to the source electrode and the drain electrode of the top electrode of the organic field effect synaptic transistor; the triboelectric nanogenerator is used to detect the vibration signal generated by the building structure, and the vibration signal is converted into an electrical signal; the synaptic transistor is then used to process the electrical signal to simulate the function of a biological synapse, so as to process and evaluate the vibration signal; the LED lamp generates a light signal when the output response of the synaptic device exceeds a preset threshold.
[0007] Furthermore, the friction layer of the triboelectric nanogenerator is composed of an elastomeric polymer to which an electronegative material is added, so as to increase the surface charge density of the elastomeric polymer; and the packaging layer of the triboelectric nanogenerator is a flexible substrate material.
[0008] Furthermore, the preparation process of the friction nanoelectric generator is as follows: Clean the flexible substrate to serve as a packaging layer; A layer of electrode with a thickness of 50-100 nm is deposited on the flexible substrate by magnetron sputtering; The mixed solution is spin-coated on the electrode using a solution method to prepare a 100 μm to 250 μm elastomeric polymer film, and a polymer with a network structure is formed as a friction layer through a thermal cross-linking reaction.
[0009] Furthermore, the mixed solution is formed by preparing an elastomeric polymer raw material solution, adding an electronegative material in a certain proportion, mixing, and allowing the mixture to stand in a vacuum.
[0010] Furthermore, the active layer of the organic field-effect synaptic transistor is composed of organic macromolecular polymer and fullerene derivatives to form a pn heterojunction structure.
[0011] Furthermore, the source electrode and the drain electrode of the top electrode of the organic field-effect synaptic transistor are made of gold or silver, and the thickness of the top electrode is 50-100 nm.
[0012] Furthermore, the preparation process of the organic field-effect synaptic transistor is as follows: Clean the base with the insulating layer; The organic macromolecular copolymer material and the fullerene derivative are dissolved in an organic solvent in a certain proportion, fully heated and stirred, and applied on a substrate by spin coating or scraping, and then annealed in air to obtain an organic semiconductor layer; A top electrode is deposited on the organic semiconductor layer through a mask by vacuum evaporation deposition.
[0013] Furthermore, the substrate is cleaned with acetone and isopropanol solution and then dried with nitrogen.
[0014] Furthermore, the organic solvent is chlorobenzene or chloroform, and the organic semiconductor is dissolved in a certain proportion with a concentration range of 2.5 to 10 mg·mL-1.
[0015] Compared with the prior art, the friction layer of the triboelectric nanogenerator provided by the present invention and its preferred embodiment is composed of an elastomeric polymer with an electronegative material added thereto to increase the surface charge density of the elastomeric polymer, which serves as a sensitive vibration sensor. The triboelectric nanogenerator is used to detect vibration and generate a pulse signal as the input of a synaptic transistor. The synaptic transistor is based on a polymer pn heterojunction and has basic synaptic behavior, which can be used to process and evaluate vibration signals. The present invention is combined with an LED lamp to realize the detection and alarm functions of building vibration signals. Finally, the system is applied to a one-dimensional convolutional neural network to realize the classification and recognition of vibrations, achieving a higher accuracy rate. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] The present invention is further described in detail below with reference to the accompanying drawings and specific embodiments: Figure 1 It is a schematic structural diagram of a self-powered building vibration sensing system based on a triboelectric nanogenerator and a synaptic transistor according to an embodiment of the present invention; Figure 2 This is a diagram showing the voltage output results of the friction nanogenerator of an embodiment of the present invention at different vibration frequencies; Figure 3 This is a diagram showing the voltage output results of the friction nanogenerator under different vibration pressures according to an embodiment of the present invention; Figure 4 is a double scanning curve diagram of a synaptic transistor according to an embodiment of the present invention; In the figure: 100 - packaging layer; 110 - electrode layer; 120 - friction layer; 130 - gate; 140 - insulating layer; 150 - organic semiconductor layer; 160 - top source and drain; 170 - LED lamp. DETAILED DESCRIPTION
[0017] In order to make the features and advantages of the present invention more clearly understood, the following embodiments are specifically described in detail as follows: It should be noted that the following detailed descriptions are exemplary and are intended to provide further explanation of the present application. Unless otherwise specified, all technical and scientific terms used herein have the same meanings as those commonly understood by those skilled in the art to which the present application belongs.
[0018] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is intended to include the plural form as well.
[0019] like Figure 1 As shown, this embodiment provides a self-powered building vibration sensing system based on a triboelectric nanogenerator and a synaptic transistor, including a triboelectric nanogenerator (TENG), an organic field effect synaptic transistor and an LED lamp; wherein the triboelectric nanogenerator is a sandwich structure, and from top to bottom are a friction layer 120, an electrode 110, and a packaging layer 100; the organic field effect synaptic transistor is composed of a gate 130, an insulating layer 140, an active layer 150 and a top electrode 160 from bottom to top; the LED lamp is connected to the top electrode of the organic field effect synaptic transistor, and when the synaptic transistor exceeds the threshold of the LED lamp, the LED lamp is lit and a warning is issued.
[0020] As a preferred embodiment of this embodiment, the friction layer 120 is a polydimethylsiloxane (PDMS) / MXene film, the electrode 110 is a copper electrode, the encapsulation layer 100 is a PET flexible material, the gate 130 is a highly doped silicon wafer, the insulating layer 140 is silicon oxide, the active layer 150 is a mixed solution of PDVT-10 and pc61bm, and the top electrode 160 is gold.
[0021] The preparation process of the above device of the present invention is further described below in conjunction with specific embodiments, but the present invention is not limited to these embodiments.
[0022] Example 1 1) Two 2 cm × 6 cm PET sheets were cleaned three times with acetone and then dried with nitrogen to obtain clean PET sheets.
[0023] 2) A copper electrode with a thickness of 50-100 nm was sputtered on the obtained PET sheet by magnetron sputtering with an argon to oxygen ratio of 20:5 and a sputtering pressure of 0.5 Pa.
[0024] 3) PDMS and curing agent were prepared in a ratio of 15:1. After removing bubbles, they were covered on the copper electrode by spin coating at a speed of 400 rpm (60s). The PET sheet was then moved to a heating table for annealing at 80 °C (6h) to prepare a 100μm-250μm thick PDMS film as the friction layer of the device.
[0025] 4) The PET substrate coated with the PDMS friction layer and the PET substrate with the copper electrode are stacked face to face to obtain a sandwich-structured friction nanogenerator.
[0026] 5) Soak the cut silicon wafer with 100 nm SiO2 in acetone and isopropanol for 2 min respectively, wash it with deionized water, and then blow it dry with nitrogen to obtain a clean silicon wafer.
[0027] 6) Prepare a mixed solution of polymer semiconductor materials PDVT-10 and PC61bm (molar ratio of 10:3) dissolved in chlorobenzene solvent, and then heat it at 60 °C and stir at 500 rpm for 12 h.
[0028] 7) Take about 0.1 mL of the mixed solution with a rubber-tipped dropper and slowly drip it onto the cleaned Si substrate. After the substrate is completely covered, spin coating is started at a speed of 1000 rpm, a rotation acceleration of 500 rpm / s, and a spin coating time of 60 s. Let it stand for 5 min, and then perform thermal annealing at 120 °C for 15 min to obtain Figure 1 The active layer shown at (150) has a thickness of about 15 nm.
[0029] 8) Using a special mask plate, a 50 nm thick gold is deposited on the semiconductor layer as a source and drain electrode by thermal evaporation. Figure 1 (160) as shown.
[0030] 9) Connect the LED light to the top source and drain electrodes of the synaptic transistor.
[0031] 10) Connect one electrode of the triboelectric nanogenerator to the gate of the synaptic transistor and the other electrode to the top drain electrode of the synaptic transistor.
[0032] Example 2 1) Two 2 cm × 6 cm PET sheets were cleaned three times with acetone and then dried with nitrogen to obtain clean PET sheets.
[0033] 2) A copper electrode with a thickness of 50-100 nm was sputtered on the obtained PET sheet by magnetron sputtering with an argon to oxygen ratio of 20:5 and a sputtering pressure of 0.5 Pa.
[0034] 3) PDMS and curing agent were prepared in a ratio of 15:1, and the mixture was then mixed with MXene with a concentration of 5 mg / ml in a mass ratio of 6:1. After removing the bubbles, the mixture was covered on the copper electrode by spin coating at a speed of 400 rpm (60 s). The PET sheet was then moved to a heating table for annealing at 80 °C (6 h) to prepare a 200 μm thick PDMS film as the friction layer of the device.
[0035] 4) The PET substrate coated with the PDMS / MXene friction layer is stacked face to face with the PET substrate with the copper electrode to obtain a sandwich-structured friction nanogenerator.
[0036] 5) Soak the cut silicon wafer with 100 nm SiO2 in acetone and isopropanol for 2 min respectively, wash it with deionized water, and then blow it dry with nitrogen to obtain a clean silicon wafer.
[0037] 6) Prepare the polymer semiconductor material ID-TBT and dissolve it in chloroform solvent at a concentration of 10 mg·mL-1, then heat it at 60°C and stir it at 500 rpm for 12 h.
[0038] 7) Take about 0.1 mL of ID-TBT solution with a rubber-tipped dropper and slowly drip it onto the cleaned Si substrate. After the substrate is completely covered, spin coating is started at a speed of 1000 rpm, a rotation acceleration of 500 rpm / s, and a spin coating time of 60 s. Let it stand for 5 min, and then perform thermal annealing at 120 °C for 15 min to obtain Figure 1 The active layer shown at (150) has a thickness of about 15 nm.
[0039] 8) Using a special mask plate, a 50 nm thick gold is deposited on the semiconductor layer as a source and drain electrode by thermal evaporation. Figure 1 (160) as shown.
[0040] 9) Connect the LED light to the top source and drain electrodes of the synaptic transistor.
[0041] 10) Connect one electrode of the triboelectric nanogenerator to the gate of the synaptic transistor and the other electrode to the top drain electrode of the synaptic transistor.
[0042] The structural diagram in the embodiment is as follows Figure 1 As shown, the voltage output of the triboelectric nanogenerator at different vibration frequencies is as follows Figure 2 As shown in the figure, the voltage outputs at different vibration frequencies of 1 Hz, 2 Hz, 3 Hz, and 4 Hz were measured respectively; the voltage output of the friction nanogenerator at different vibration pressures is shown in the figure. Figure 3 As shown in Figure 1, different voltage outputs were measured under vibration pressures of 0.25N, 0.5N, 0.75N, and 1N; the double scan curves of the synaptic transistor are shown in Figure 1. Figure 4As shown in the figure, the double sweep curve from V = 40V to -40VDS at V = -5VGS shows a large hysteresis window. The output pulse of the nanogenerator increases with the increase of the vibration signal. The synaptic current response of the synaptic device increases with the increase of the input pulse. When the output response of the synaptic device exceeds the threshold of the LED light, the LED light is illuminated to issue a warning.
[0043] The present invention is not limited to the above-mentioned optimal implementation mode. Anyone can derive other various forms of a self-powered building vibration sensing system based on a triboelectric nanogenerator and a synaptic transistor under the inspiration of the present invention. All equivalent changes and modifications made within the scope of the patent application of the present invention shall fall within the scope of the present invention.
Claims
1. A self-powered building vibration sensing system based on triboelectric nanogenerator and synaptic transistor, characterized in that: It includes a triboelectric nanogenerator, an organic field effect synaptic transistor and an LED lamp; wherein the triboelectric nanogenerator is a sandwich structure, which comprises a friction layer, an electrode and a packaging layer from top to bottom; the organic field effect synaptic transistor consists of a substrate with an insulating layer, an active layer and a top electrode from bottom to top; the LED lamp is connected to the source electrode and the drain electrode of the top electrode of the organic field effect synaptic transistor; the triboelectric nanogenerator is used to detect the vibration signal generated by the building structure and convert the vibration signal into an electrical signal; the synaptic transistor is then used to process the electrical signal to simulate the function of a biological synapse, so as to process and evaluate the vibration signal; the LED lamp generates a light signal when the output response of the synaptic device exceeds a preset threshold.
2. A self-powered building vibration sensing system based on a triboelectric nanogenerator and a synaptic transistor according to claim 1, characterized in that: The friction layer of the triboelectric nanogenerator is composed of an elastomeric polymer with electronegative materials added thereto, so as to increase the surface charge density of the elastomeric polymer; and the packaging layer of the triboelectric nanogenerator is a flexible substrate material.
3. The self-powered building vibration sensing system based on triboelectric nanogenerator and synaptic transistor according to claim 1, characterized in that: The preparation process of the friction nanoelectric generator is as follows: Clean the flexible substrate to serve as a packaging layer; A layer of electrode with a thickness of 50-100 nm is deposited on the flexible substrate by magnetron sputtering; The mixed solution is spin-coated on the electrode using a solution method to prepare a 100 μm to 250 μm elastomeric polymer film, and a polymer with a network structure is formed as a friction layer through a thermal cross-linking reaction.
4. The self-powered building vibration sensing system based on triboelectric nanogenerator and synaptic transistor according to claim 3 is characterized by: The mixed solution is formed by preparing an elastomeric polymer raw material solution, adding an electronegative material in a certain proportion, mixing the mixture, and standing the mixture in a vacuum.
5. The self-powered building vibration sensing system based on triboelectric nanogenerator and synaptic transistor according to claim 1, characterized in that: The active layer of the organic field effect synaptic transistor is composed of organic macromolecular polymer and fullerene derivatives to form a pn heterojunction structure.
6. The self-powered building vibration sensing system based on triboelectric nanogenerator and synaptic transistor according to claim 1, characterized in that: The source electrode and the drain electrode of the top electrode of the organic field effect synaptic transistor are made of gold or silver, and the thickness of the top electrode is 50-100 nm.
7. The self-powered building vibration sensing system based on triboelectric nanogenerator and synaptic transistor according to claim 1, characterized in that: The preparation process of the organic field-effect synaptic transistor is as follows: Clean the base with the insulating layer; The organic macromolecular copolymer material and the fullerene derivative are dissolved in an organic solvent in a certain proportion, fully heated and stirred, and applied on a substrate by spin coating or scraping, and then annealed in air to obtain an organic semiconductor layer; A top electrode is deposited on the organic semiconductor layer through a mask by vacuum evaporation deposition.
8. The self-powered building vibration sensing system based on triboelectric nanogenerator and synaptic transistor according to claim 7 is characterized in that: The substrate was cleaned with acetone and isopropanol solution and then dried with nitrogen gas.
9. The self-powered building vibration sensing system based on triboelectric nanogenerator and synaptic transistor according to claim 7, characterized in that: The organic solvent is chlorobenzene or chloroform, and the organic semiconductor is dissolved in a certain proportion with a concentration range of 2.5 to 10 mg·mL-1.