Method and device for adjusting fiber mirror in high-voltage electrical equipment and medium

Abstract

The invention provides a method and device for adjusting a fiber mirror in high-voltage electrical equipment and a medium, and the method comprises the steps: constructing simulated high-voltage electrical equipment according to the electrical parameters and equipment structure of the high-voltage electrical equipment, and constructing a simulated fiber mirror according to the equipment structure and fiber mirror parameters of the fiber mirror, the simulation fiberscope is arranged in the simulation high-voltage electrical equipment, the electric field intensity, influenced by the simulation fiberscope, of the simulation high-voltage electrical equipment is calculated, the magnetic field intensity, influenced by the simulation fiberscope, of the simulation high-voltage electrical equipment is calculated, and fiberscope parameters in the simulation fiberscope are adjusted according to the electric field intensity and the magnetic field intensity. The difference value between the electric field intensity and the preset electric field intensity threshold value is smaller than a first preset difference threshold value, and the difference value between the magnetic field intensity and the preset magnetic field intensity is smaller than a second preset difference threshold value. And the electric field intensity and the magnetic field intensity of the simulated high-voltage electrical equipment reach preset threshold values by adjusting parameters of the simulated fiberscope.

Description

Technical Field

[0001] The present application relates to the technical field of electromagnetic field simulation of high-voltage electrical equipment, and in particular to an adjustment method, device and medium for a fiberscope inside a high-voltage electrical equipment. Background Art

[0002] Due to the high voltage, high air pressure and dark internal environment of high-voltage electrical equipment, the prior art generally uses external indirect methods to detect the internal state of high-voltage electrical equipment. At present, visible light, infrared detection and the like are used to detect the internal state of high-voltage electrical equipment, but the visible light and infrared detection ranges are relatively narrow. In addition, vibration, soundprint and other methods can also be used to detect high-voltage electrical equipment, but due to the large influence of on-site noise during detection, the detection accuracy is low. In addition, ultrasonic, ultra-high frequency and sulfur hexafluoride gas component detection can also be used, but it is impossible to visualize and accurately identify defective parts. Summary of the invention

[0003] In order to solve the above technical problems, the present application is proposed. The embodiments of the present application provide a method, device and medium for adjusting a fiberscope inside a high-voltage electrical device, solving the problem that the high-voltage electrical device cannot be accurately detected in the prior art.

[0004] According to one aspect of the present application, a method for adjusting a fiberscope inside a high-voltage electrical device is provided, comprising:

[0005] Constructing a simulated high-voltage electrical device according to the electrical parameters and device structure of the high-voltage electrical device;

[0006] According to the equipment structure and parameters of the fiberscope, a simulated fiberscope is constructed; wherein the simulated fiberscope is arranged in the high-voltage electrical equipment;

[0007] Calculating the electric field strength of the simulated high-voltage electrical equipment affected by the simulated fiberscope;

[0008] calculating the magnetic field strength of the simulated high-voltage electrical equipment affected by the simulated fiberscope;

[0009] According to the electric field and the magnetic field, the fiberscope parameters in the simulated fiberscope are adjusted so that the difference between the electric field strength and the preset electric field strength threshold is less than a first preset difference threshold, and the difference between the magnetic field strength and the preset magnetic field strength is less than a second preset difference threshold.

[0010] In one embodiment, the calculation formula of the electric field strength is:

[0011] in, In a specific direction The associated electric potential, is the potential value at the jth node, is the electric field component In a specific direction The coefficient related to node j on The unit vector along the x-axis, The unit vector along the y-axis, Unit vector along the z-axis.

[0012] In one embodiment, the calculation formula of the magnetic field strength is:

[0013] Among them, J x , J y , J z is the component of current density in the x, y, and z directions, A x , A y , A z is the component of magnetic vector potential A in the x, y, and z directions, V is the volume, μ r is the magnetic permeability.

[0014] In one embodiment, A x This is represented within an eth element with n nodes:

[0015] is the weight or contribution of node j in the e-th element, is the magnetic vector potential component at node h within the e-th element, is the component of the magnetic vector potential A in the e-th element in the x-direction.

[0016] In one embodiment, A y This is represented within an eth element with n nodes:

[0017] is the weight or contribution of node h in the e-th element, is the magnetic vector potential component at node j in the e-th element, is the component of the magnetic vector potential A in the e-th element in the y direction.

[0018] In one embodiment, A z This is represented within an eth element with n nodes:

[0019] is the weight or contribution of node j in the e-th element, is the magnetic vector potential component at node j in the e-th element, is the component of the magnetic vector potential A in the e-th element in the z direction.

[0020] In one embodiment, the magnetic field intensity in the eth element is about the magnetic vector potential component The partial derivative of is: is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution, The x-offset vector of the relationship between the magnetic field strength F and the magnetic field distribution in the e-th element.

[0021] In one embodiment, the magnetic field intensity in the eth element is about the magnetic vector potential component The partial derivative of is: is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution, The y offset vector of the relationship between the magnetic field intensity F and the magnetic field distribution in the e-th element, The energy density in the e-th element, is the component of the magnetic vector potential A in the e-th element in the x direction, is the component of the magnetic vector potential A in the e-th element in the y direction, is the component of the magnetic vector potential A in the e-th element in the z direction.

[0022] In one embodiment, the magnetic field intensity in the eth element is about the magnetic vector potential component The partial derivative of is: is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution, z offset vector of the relationship between the magnetic field intensity F and the magnetic field distribution in the e-th element, The energy density in the e-th element, is the component of the magnetic vector potential A in the e-th element in the x direction, is the component of the magnetic vector potential A in the e-th element in the y direction, is the component of the magnetic vector potential A in the e-th element in the z direction.

[0023] According to another aspect of the present application, there is provided an adjustment device for a fiberscope inside a high-voltage electrical device, comprising:

[0024] A first construction module is used to construct a simulated high-voltage electrical device according to electrical parameters and device structure of the high-voltage electrical device;

[0025] A second construction module is used to construct a simulated fiberscope according to the device structure and fiberscope parameters of the fiberscope; wherein the simulated fiberscope is arranged in the simulated high-voltage electrical equipment;

[0026] A first calculation module, used for calculating the electric field strength of the simulated high-voltage electrical equipment affected by the simulated fiberscope;

[0027] A second calculation module, used for calculating the magnetic field strength of the simulated high-voltage electrical equipment affected by the simulated fiberscope;

[0028] An adjustment module is used to adjust the fiberscope parameters in the simulated fiberscope according to the electric field strength and the magnetic field strength, so that the difference between the electric field strength and the preset electric field strength threshold is less than a first preset difference threshold, and the difference between the magnetic field strength and the preset magnetic field strength is less than a second preset difference threshold.

[0029] In one embodiment, the calculation formula of the electric field strength is:

[0030] in, In a specific direction The associated electric potential, is the potential value at the jth node, is the electric field component In a specific direction The coefficient related to node j on The unit vector along the x-axis, The unit vector along the y-axis, Unit vector along the z-axis.

[0031] In one embodiment, the calculation formula of the magnetic field strength is:

[0032]

[0033] Among them, J x , J y , J z is the component of current density in the x, y, and z directions, A x , A y , A z is the component of magnetic vector potential A in the x, y, and z directions, V is the volume, μ r is the magnetic permeability.

[0034] In one embodiment, A x This is represented within an eth element with n nodes:

[0035] is the weight or contribution of node j in the e-th element, is the magnetic vector potential component at node j in the e-th element, is the component of the magnetic vector potential A in the e-th element in the x-direction.

[0036] In one embodiment, A y This is represented within an eth element with n nodes:

[0037] is the weight or contribution of node j in the e-th element, is the magnetic vector potential component at node j in the e-th element, is the component of the magnetic vector potential A in the e-th element in the y direction.

[0038] In one embodiment, A z This is represented within an eth element with n nodes:

[0039] is the weight or contribution of node j in the e-th element, is the magnetic vector potential component at node j in the e-th element, is the component of the magnetic vector potential A in the e-th element in the z direction.

[0040] In one embodiment, the magnetic field intensity in the eth element is about the magnetic vector potential component The partial derivative of is: is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution, The x-offset vector of the relationship between the magnetic field strength F and the magnetic field distribution in the e-th element.

[0041] In one embodiment, the magnetic field intensity in the eth element is about the magnetic vector potential component The partial derivative of is: is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution, The y offset vector of the relationship between the magnetic field intensity F and the magnetic field distribution in the e-th element, The energy density in the e-th element, is the component of the magnetic vector potential A in the e-th element in the x direction, is the component of the magnetic vector potential A in the e-th element in the y direction, is the component of the magnetic vector potential A in the e-th element in the z direction.

[0042] In one embodiment, the magnetic field intensity in the eth element is about the magnetic vector potential component The partial derivative of is: is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution, z offset vector of the relationship between the magnetic field intensity F and the magnetic field distribution in the e-th element, The energy density in the e-th element, is the component of the magnetic vector potential A in the e-th element in the x direction, is the component of the magnetic vector potential A in the e-th element in the y direction, is the component of the magnetic vector potential A in the e-th element in the z direction.

[0043] In another aspect of the present application, a computer-readable storage medium is provided, wherein the storage medium stores a computer program, and the computer program is used to execute any of the above-mentioned methods for adjusting the fiberscope inside the high-voltage electrical equipment.

[0044] The present application provides a method, device and medium for adjusting a fiberscope inside a high-voltage electrical device, including: constructing a simulated high-voltage electrical device according to the electrical parameters and device structure of the high-voltage electrical device, constructing a simulated fiberscope according to the device structure and fiberscope parameters of the fiberscope, wherein the simulated fiberscope is set in the simulated high-voltage electrical device, calculating the electric field strength of the simulated high-voltage electrical device affected by the simulated fiberscope, calculating the magnetic field strength of the simulated high-voltage electrical device affected by the simulated fiberscope, and adjusting the fiberscope parameters in the simulated fiberscope according to the electric field strength and the magnetic field strength, so that the difference between the electric field strength and the preset electric field strength threshold is less than the first preset difference threshold, and the difference between the magnetic field strength and the preset magnetic field strength is less than the second preset difference threshold. By constructing the simulated high-voltage electrical device and the simulated fiberscope, the simulated fiberscope works in the simulated high-voltage electrical device, and adjusting the parameters of the simulated fiberscope, so that the electric field strength and the magnetic field strength of the simulated high-voltage electrical device reach the preset thresholds. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] By describing the embodiments of the present application in more detail in conjunction with the accompanying drawings, the above and other purposes, features and advantages of the present application will become more apparent. The accompanying drawings are used to provide a further understanding of the embodiments of the present application and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the present application and do not constitute a limitation of the present application. In the accompanying drawings, the same reference numerals generally represent the same components or steps.

[0046] Figure 1 It is a flowchart of a method for adjusting a fiberscope inside a high-voltage electrical device provided by an exemplary embodiment of the present application.

[0047] Figure 2 It is a schematic diagram of the structure of a fiberscope provided by an exemplary embodiment of the present application.

[0048] Figure 3 It is a schematic diagram of the structure of a simulated high-voltage electrical device provided by an exemplary embodiment of the present application.

[0049] Figure 4 It is a schematic structural diagram of an adjustment device for a fiberscope inside a high-voltage electrical device provided by an exemplary embodiment of the present application.

[0050] Figure 5 It is a structural diagram of an electronic device provided by an exemplary embodiment of the present application. DETAILED DESCRIPTION

[0051] Below, the exemplary embodiments according to the present application will be described in detail with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application, and it should be understood that the present application is not limited to the exemplary embodiments described here.

[0052] Figure 1 It is a flowchart of a method for adjusting a fiberscope inside a high-voltage electrical device provided by an exemplary embodiment of the present application. Figure 2 It is a schematic diagram of the structure of a fiberscope provided by an exemplary embodiment of the present application. Figure 3 Schematic diagram of the structure of a simulated high-voltage electrical device provided by an exemplary embodiment of the present application. Figure 1-3 As shown, the adjustment method of the fiberscope inside the high-voltage electrical equipment includes:

[0053] Step 110: construct a simulated high-voltage electrical device according to the electrical parameters and device structure of the high-voltage electrical device.

[0054] In the embodiment of the present application, detailed parameters of high-voltage electrical equipment are obtained, including but not limited to electrical structure parameters, material parameters, working environment parameters, etc. The GIS shell is made of aluminum alloy, the insulating gas in the cavity is SF6, the solid insulation in the cavity is silicone rubber, and the conductor is copper. An air domain is set above the GIS periphery to simulate the daily working environment of the GIS, and a soil layer is set below.

[0055] Step 120: construct a simulated fiberscope according to the device structure and fiberscope parameters of the fiberscope, wherein the simulated fiberscope is arranged in a simulated high-voltage electrical device.

[0056] In the embodiment of the present application, the fiber core of the fiberscope is composed of many single-filament optical fibers, the outer periphery of the fiber core is wrapped by a cladding (refractive layer), and the outer surface is a coating layer (primary coating layer) and a tight jacket quilt layer (secondary coating layer) in sequence. The fiber core and the cladding are both made of silicon dioxide (SiO2) material, but their refractive indices are different. Normally, the refractive index of the fiber core is higher than that of the fiber cladding to achieve total reflection of light in the fiber core. Generally speaking, the dielectric constant and the refractive index are positively correlated, that is, the dielectric constant of a material with a higher refractive index should also be higher. Therefore, the relative dielectric constant of the fiber core should be higher than the relative dielectric constant of the refractive layer. The primary coating layer of the fiberscope is made of silicone rubber (Silicone [solid]) material, and the secondary coating layer is made of polyimide (Polyimide, referred to as PI) material.

[0057] Step 130: Calculate the electric field strength of the simulated high-voltage electrical equipment affected by the simulated fiberscope.

[0058] In the present embodiment, all domains are set to charge conservation. Under static conditions, the potential V is defined by the following relationship:

[0059]

[0060] φ is the electric potential and E is the electric field strength.

[0061] The charge conservation node follows Gauss's law:

[0062]

[0063] ε0 is the vacuum dielectric constant (vacuum permittivity, its value is about 8.85×10^-12F / m), ε r is the relative dielectric constant.

[0064] Add the charge conservation equation for the electric displacement field to define the constitutive relation and its related properties. The relative permittivity uses the constitutive relation D = ε0εrE. D is the electric displacement vector

[0065] Set the outer boundary of the air domain to zero charge. The Zero Charge node adds the condition that the charge on the boundary is zero, so n·D=0.

[0066] Set the bus terminal, V = 220KV. The terminal node provides boundary or domain conditions for connecting to an external circuit, transmission line, or with a specified voltage or charge.

[0067] Set grounding V=0 on the GIS housing, grounding switch and soil surface.

[0068] Set the initial value V of all fields to 0.

[0069] Electrostatic field solution, solving Poisson's equation

[0070] is the charge density.

[0071] On the surface S, φ = p, where p is a constant. The finite element method is used to find the electric potential n, according to Find the electric field.

[0072] Because tetrahedral elements are used, the electric field inside the element is given by the constant vector

[0073]

[0074] In a specific direction The electric field vector on In a specific direction The associated electric potential, is the potential value at the jth node, usually specified inside the tetrahedron element, is the electric field component In a specific direction These coefficients are usually determined by the discretization process of the finite element method.

[0075] Step 140: Calculate the magnetic field strength of the simulated high-voltage electrical equipment affected by the simulated fiberscope.

[0076] Setting all regions to Ampere's law, the integral form of Ampere's law can be written as:

[0077] B is the magnetic field (magnetic induction intensity), dL is the tiny line element on the integral path, μ0 is the magnetic permeability in a vacuum (also called vacuum magnetic permeability, with a value of approximately 4π×10^-7T m / A), and J is the current density, which is the amount of current passing through per unit area.

[0078] The differential form of Ampere's law is part of Maxwell's equations:

[0079] J is the current density, is the rate of change of the electric field with time, is the displacement current term, which reflects the effect of the electric field changing with time.

[0080] The air domain boundary is set to magnetic insulation, which makes the tangential component of the magnetic potential zero at the boundary n×A=0. b is the unit normal vector on the magnetic insulation surface, pointing to the outside of the surface, and A is the magnetic potential vector (vector potential).

[0081] Magnetic insulation is a special case of the magnetic potential boundary condition. It indicates that on this boundary, the normal component of the magnetic field (that is, the component perpendicular to the boundary) is zero. This is equivalent to assuming that there is no magnetic flux passing through this boundary. Mathematically, this boundary condition can be written as B·n=0, where B is the magnetic field and n is the unit normal vector pointing outside the boundary. Since the magnetic field mainly changes inside the simulation area and is independent of the boundary, the magnetic insulation boundary condition is set on the boundary.

[0082] Set the copper conductor region to a single conductor coil with an excitation voltage of 220KV. The Coil section is used to simulate coils, cables, and other conductors that are subject to lumped excitations, such as externally applied currents or voltages. Set the initial value of the magnetic vector potential in all domains to 0Wb / m. Solve the magnetic field distribution and solve the vector equation

[0083]

[0084] μ0 is the magnetic permeability in vacuum, μ r is the relative magnetic permeability, and J is the current density.

[0085] On the surface S, it obeys the Dirichlet boundary condition

[0086]

[0087] is a unit vector, usually representing a direction or normal vector in space, and P is a constant vector. On the interface where n suddenly changes, the applicable continuity condition is

[0088]

[0089] A + is the magnetic vector potential in a medium, A ― is the magnetic vector potential in another medium.

[0090] and

[0091] and are the relative magnetic permeabilities of the two media respectively.

[0092] It follows directly from Maxwell's continuity condition and

[0093] is a unit vector representing a certain direction, B + is the magnetic field in a medium, B ― is the magnetic field in another medium. + is the magnetic field strength in a medium, H ―is the magnetic field intensity in another medium. By taking the extreme value of the functional, we can solve (1)-(4)

[0094]

[0095] Rewrite as

[0096]

[0097] ·J x , J y , J z are the components of the current density in the x, y, and z directions,

[0098] ·A x , A y , A z are the components of the magnetic vector potential A in the three coordinate directions.

[0099] For discretization, the volume V is subdivided into M small tetrahedral elements. Within the eth element with n nodes, the three components Ax, Ay and Az are represented as

[0100]

[0101]

[0102]

[0103] is the component of the magnetic vector potential A in the e-th element in the x direction, is the component of the magnetic vector potential A in the e-th element in the y direction, is the component of the magnetic vector potential A in the e-th element in the z direction.

[0104] is the coefficient, representing the weight or contribution of node j in the e-th element,

[0105] is the magnetic vector potential component at node j in the eth element

[0106] Substituting into (5) we get the part of F related to the eth element, and by taking its relative and The partial derivative of

[0107]

[0108]

[0109]

[0110] are the energy density F in the e-th element with respect to the magnetic vector potential component The partial derivative of

[0111] is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution,

[0112] is the offset vector describing the relationship between the energy density function F and the magnetic field distribution within the e-th element.

[0113] The matrix and vector are given by

[0114]

[0115]

[0116]

[0117]

[0118]

[0119] Assemble all elements and impose stationarity requirements to obtain the system of equations

[0120]

[0121]

[0122]

[0123] therefore

[0124] [k xx ]{A x}+[k xy ]{A y}+[k xz ]{A z}={b x}

[0125] [k yx ]{A x}+[k yy ]{A y}+[k yz ]{A z}={b y}

[0126] [k zx ]{A x}+[k zy ]{A y}+[kzz ]{A z}={b z}

[0127] The solution is obtained for the potential at each node after applying the Dirichlet boundary conditions.

[0128] Step 150: According to the electric field strength and the magnetic field strength, the fiberscope parameters in the simulated fiberscope are adjusted so that the difference between the electric field strength and the preset electric field strength threshold is less than the first preset difference threshold, and the difference between the magnetic field strength and the preset magnetic field strength is less than the second preset difference threshold.

[0129] In one embodiment, the calculation formula of the electric field strength is: in, In a specific direction The associated electric potential, is the potential value at the jth node, is the electric field component In a specific direction The coefficient related to node j on The unit vector along the x-axis, The unit vector along the y-axis, Unit vector along the z-axis.

[0130] In one embodiment, the calculation formula of the magnetic field strength is:

[0131]

[0132] Among them, J x , J y , J z is the component of current density in the x, y, and z directions, A x , A y , A z is the component of magnetic vector potential A in the x, y, and z directions, V is the volume, μ r is the magnetic permeability.

[0133] In one embodiment, A x This is represented within an eth element with n nodes:

[0134] is the weight or contribution of node j in the e-th element, is the magnetic vector potential component at node j in the e-th element, is the component of the magnetic vector potential A in the e-th element in the x-direction.

[0135] In one embodiment, A yThis is represented within an eth element with n nodes:

[0136] is the weight or contribution of node j in the e-th element, is the magnetic vector potential component at node j in the e-th element, is the component of the magnetic vector potential A in the e-th element in the y direction.

[0137] In one embodiment, A z This is represented within an eth element with n nodes:

[0138] is the weight or contribution of node j in the e-th element, is the magnetic vector potential component at node j in the e-th element, is the component of the magnetic vector potential A in the e-th element in the z direction.

[0139] In one embodiment, the magnetic field strength in the eth element is related to the magnetic vector potential component The partial derivative of is: is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution, The x-offset vector of the relationship between the magnetic field strength F and the magnetic field distribution in the e-th element.

[0140] In one embodiment, the magnetic field strength in the eth element is related to the magnetic vector potential component The partial derivative of is: is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution, The y offset vector of the relationship between the magnetic field intensity F and the magnetic field distribution in the e-th element, The energy density in the e-th element, is the component of the magnetic vector potential A in the e-th element in the x direction, is the component of the magnetic vector potential A in the e-th element in the y direction, is the component of the magnetic vector potential A in the e-th element in the z direction.

[0141] In one embodiment, the magnetic field strength in the eth element is related to the magnetic vector potential component The partial derivative of is: is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution, z offset vector of the relationship between the magnetic field intensity F and the magnetic field distribution in the e-th element, The energy density in the e-th element, is the component of the magnetic vector potential A in the e-th element in the x direction, is the component of the magnetic vector potential A in the e-th element in the y direction, is the component of the magnetic vector potential A in the e-th element in the z direction.

[0142] Figure 4 FIG. 1 is a schematic diagram of a structure of an adjustment device for a fiberscope inside a high-voltage electrical device provided by an exemplary embodiment of the present application. Figure 4 As shown, the adjustment device 20 of the fiberscope inside the high-voltage electrical equipment includes: a first construction module 201, used to construct a simulated high-voltage electrical equipment according to the electrical parameters and equipment structure of the high-voltage electrical equipment; a second construction module 202, used to construct a simulated fiberscope according to the equipment structure and fiberscope parameters of the fiberscope; wherein the simulated fiberscope is arranged in the simulated high-voltage electrical equipment; a first calculation module 203, used to calculate the electric field strength of the simulated high-voltage electrical equipment affected by the simulated fiberscope; a second calculation module 204, used to calculate the magnetic field strength of the simulated high-voltage electrical equipment affected by the simulated fiberscope; an adjustment module 205, used to adjust the fiberscope parameters in the simulated fiberscope according to the electric field strength and the magnetic field strength, so that the difference between the electric field strength and the preset electric field strength threshold is less than the first preset difference threshold, and the difference between the magnetic field strength and the preset magnetic field strength is less than the second preset difference threshold.

[0143] In one embodiment, the calculation formula of the electric field strength is:

[0144] in, In a specific direction The associated electric potential, is the potential value at the jth node, is the electric field component In a specific direction The coefficient related to node j on The unit vector along the x-axis, The unit vector along the y-axis, Unit vector along the z-axis.

[0145] In one embodiment, the calculation formula of the magnetic field strength is:

[0146] Among them, J x , J y , J z is the component of current density in the x, y, and z directions, A x , A y, A z is the component of magnetic vector potential A in the x, y, and z directions, V is the volume, μ r is the magnetic permeability.

[0147] In one embodiment, A x This is represented within an eth element with n nodes:

[0148] is the weight or contribution of node j in the e-th element, is the magnetic vector potential component at node j in the e-th element, is the component of the magnetic vector potential A in the e-th element in the x-direction.

[0149] In one embodiment, A y This is represented within an eth element with n nodes:

[0150] is the weight or contribution of node j in the e-th element, is the magnetic vector potential component at node j in the eth element

[0151] , is the component of the magnetic vector potential A in the e-th element in the y direction.

[0152] In one embodiment, A z This is represented within an eth element with n nodes:

[0153] is the weight or contribution of node j in the e-th element, is the magnetic vector potential component at node j in the e-th element, is the component of the magnetic vector potential A in the e-th element in the z direction.

[0154] In one embodiment, the magnetic field strength in the eth element is related to the magnetic vector potential component The partial derivative of is: is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution, The x-offset vector of the relationship between the magnetic field strength F and the magnetic field distribution in the e-th element.

[0155] In one embodiment, the magnetic field strength in the eth element is related to the magnetic vector potential component The partial derivative of is: is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution, The y offset vector of the relationship between the magnetic field intensity F and the magnetic field distribution in the e-th element, The energy density in the e-th element, is the component of the magnetic vector potential A in the e-th element in the x direction, is the component of the magnetic vector potential A in the e-th element in the y direction, is the component of the magnetic vector potential A in the e-th element in the z direction.

[0156] In one embodiment, the magnetic field strength in the eth element is related to the magnetic vector potential component The partial derivative of is: is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution, z offset vector of the relationship between the magnetic field intensity F and the magnetic field distribution in the e-th element, The energy density in the e-th element, is the component of the magnetic vector potential A in the e-th element in the x direction, is the component of the magnetic vector potential A in the e-th element in the y direction, is the component of the magnetic vector potential A in the e-th element in the z direction.

[0157] Figure 5 A block diagram of an electronic device according to an embodiment of the present application is illustrated.

[0158] like Figure 5 As shown, the electronic device 10 includes one or more processors 11 and a memory 12 .

[0159] The processor 11 may be a central processing unit (CPU) or other forms of processing units having data processing capabilities and / or instruction execution capabilities, and may control other components in the electronic device 10 to perform desired functions.

[0160] The memory 12 may include one or more computer program products, and the computer program product may include various forms of computer-readable storage media, such as volatile memory and / or non-volatile memory. The volatile memory may include, for example, random access memory (RAM) and / or cache memory (cache), etc. The non-volatile memory may include, for example, read-only memory (ROM), hard disk, flash memory, etc. One or more computer program instructions may be stored on the computer-readable storage medium, and the processor 11 may run the program instructions to implement the adjustment method of the fiberscope inside the high-voltage electrical equipment of each embodiment of the present application described above and / or other desired functions. Various contents such as input signals, signal components, noise components, etc. may also be stored in the computer-readable storage medium.

[0161] In one example, the electronic device 10 may further include: an input device 13 and an output device 14, and these components are interconnected via a bus system and / or other forms of connection mechanisms (not shown).

[0162] When the electronic device is a stand-alone device, the input device 13 may be a communication network connector, which is used to receive the collected input signals from the first device and the second device.

[0163] In addition, the input device 13 may also include, for example, a keyboard, a mouse, and the like.

[0164] The output device 14 can output various information to the outside, including the determined distance information, direction information, etc. The output device 14 can include, for example, a display, a speaker, a printer, a communication network and a remote output device connected thereto, and the like.

[0165] Of course, to simplify, Figure 5 Only some of the components related to the present application in the electronic device 10 are shown, and components such as a bus, an input / output interface, etc. are omitted. In addition, according to specific application situations, the electronic device 10 may also include any other appropriate components.

[0166] The computer program product may be written in any combination of one or more programming languages ​​to write program codes for performing the operations of the embodiments of the present application, including object-oriented programming languages, such as Java, C++, etc., and conventional procedural programming languages, such as "C" language or similar programming languages. The program code may be executed entirely on the user computing device, partially on the user device, as an independent software package, partially on the user computing device and partially on a remote computing device, or entirely on a remote computing device or server.

[0167] The computer readable storage medium can adopt any combination of one or more readable media. The readable medium can be a readable signal medium or a readable storage medium. The readable storage medium can include, for example, but is not limited to, a system, device or device of electricity, magnetism, light, electromagnetic, infrared, or semiconductor, or any combination of the above. More specific examples (non-exhaustive list) of readable storage media include: an electrical connection with one or more wires, a portable disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above.

[0168] The above description has been given for the purpose of illustration and description. In addition, this description is not intended to limit the embodiments of the present application to the forms disclosed herein. Although multiple example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, changes, additions and sub-combinations thereof.

Claims

1. A method for adjusting a fiberscope inside a high-voltage electrical device, characterized in that: include: Constructing a simulated high-voltage electrical device according to the electrical parameters and device structure of the high-voltage electrical device; According to the equipment structure and parameters of the fiberscope, a simulated fiberscope is constructed; wherein the simulated fiberscope is arranged in the simulated high-voltage electrical equipment; Calculating the electric field strength of the simulated high-voltage electrical equipment affected by the simulated fiberscope; calculating the magnetic field strength of the simulated high-voltage electrical equipment affected by the simulated fiberscope; According to the electric field strength and the magnetic field strength, the fiberscope parameters in the simulated fiberscope are adjusted so that the difference between the electric field strength and the preset electric field strength threshold is less than a first preset difference threshold, and the difference between the magnetic field strength and the preset magnetic field strength is less than a second preset difference threshold.

2. The method for adjusting the fiberscope inside high-voltage electrical equipment according to claim 1, characterized in that: The calculation formula of the electric field strength is: in, In a specific direction The associated electric potential, is the potential value at the jth node, is the electric field component In a specific direction The coefficient related to node j on The unit vector along the x-axis, The unit vector along the y-axis, Unit vector along the z-axis.

3. The method for adjusting the fiberscope inside high-voltage electrical equipment according to claim 1, characterized in that: The calculation formula of the magnetic field strength is: Among them, J x , J y , J z is the component of current density in the x, y, and z directions, A x , A y , A z is the component of magnetic vector potential A in the x, y, and z directions, V is the volume, μ r is the magnetic permeability.

4. The method for adjusting the fiberscope inside high-voltage electrical equipment according to claim 3, characterized in that: A x This is represented within an eth element with n nodes: is the weight or contribution of node j in the e-th element, is the magnetic vector potential component at node j in the e-th element, is the component of the magnetic vector potential A in the e-th element in the x-direction.

5. The method for adjusting the fiberscope inside high-voltage electrical equipment according to claim 3, characterized in that: A y This is represented within an eth element with n nodes: is the weight or contribution of node j in the e-th element, is the magnetic vector potential component at node j in the e-th element, is the component of the magnetic vector potential A in the e-th element in the y direction.

6. The method for adjusting the fiberscope inside high-voltage electrical equipment according to claim 3, characterized in that: A z This is represented within an eth element with n nodes: is the weight or contribution of node j in the e-th element, is the magnetic vector potential component at node j in the e-th element, is the component of the magnetic vector potential A in the e-th element in the z direction.

7. The method for adjusting the fiberscope inside high-voltage electrical equipment according to claim 4, characterized in that: The magnetic field intensity is related to the magnetic vector potential component in the eth element. The partial derivative of is: is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution, The x-offset vector of the relationship between the magnetic field strength F and the magnetic field distribution in the e-th element.

8. The method for adjusting the fiberscope inside high-voltage electrical equipment according to claim 5, characterized in that: The magnetic field intensity is related to the magnetic vector potential component in the eth element. The partial derivative of is: is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution, The y offset vector of the relationship between the magnetic field intensity F and the magnetic field distribution in the e-th element, The energy density in the e-th element, is the component of the magnetic vector potential A in the e-th element in the x direction, is the component of the magnetic vector potential A in the e-th element in the y direction, is the component of the magnetic vector potential A in the e-th element in the z direction.

9. The method for adjusting the fiberscope inside high-voltage electrical equipment according to claim 6, characterized in that: The magnetic field intensity is related to the magnetic vector potential component in the eth element. The partial derivative of is: is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution, z offset vector of the relationship between the magnetic field intensity F and the magnetic field distribution in the e-th element, The energy density in the e-th element, is the component of the magnetic vector potential A in the e-th element in the x direction, is the component of the magnetic vector potential A in the e-th element in the y direction, is the component of the magnetic vector potential A in the e-th element in the z direction.

10. An adjustment device for a fiberscope inside a high-voltage electrical device, characterized in that: include: A first construction module is used to construct a simulated high-voltage electrical device according to electrical parameters and device structure of the high-voltage electrical device; A second construction module is used to construct a simulated fiberscope according to the device structure and fiberscope parameters of the fiberscope; wherein the simulated fiberscope is arranged in the simulated high-voltage electrical equipment; a first calculation module is used to calculate the electric field strength of the simulated high-voltage electrical equipment affected by the simulated fiberscope; a second calculation module is used to calculate the magnetic field strength of the simulated high-voltage electrical equipment affected by the simulated fiberscope; an adjustment module is used to adjust the fiberscope parameters in the simulated fiberscope according to the electric field strength and the magnetic field strength, so that the difference between the electric field strength and the preset electric field strength threshold is less than the first preset difference threshold, and the difference between the magnetic field strength and the preset magnetic field strength is less than the second preset difference threshold.

11. The adjusting device for the fiberscope inside the high-voltage electrical equipment according to claim 10, characterized in that: The calculation formula of the electric field strength is: in, In a specific direction The associated electric potential, is the potential value at the jth node, is the electric field component In a specific direction The coefficient related to node j on The unit vector along the x-axis, The unit vector along the y-axis, Unit vector along the z-axis.

12. The adjusting device for the fiberscope inside the high-voltage electrical equipment according to claim 10, characterized in that: The calculation formula of the magnetic field strength is: Among them, J x , J y , J z is the component of current density in the x, y, and z directions, A x , A y , A z is the component of magnetic vector potential A in the x, y, and z directions, V is the volume, μ r is the magnetic permeability.

13. The adjusting device for the fiberscope inside the high-voltage electrical equipment according to claim 12, characterized in that: A x This is represented within an eth element with n nodes: is the weight or contribution of node j in the e-th element, is the magnetic vector potential component at node j in the e-th element, is the component of the magnetic vector potential A in the e-th element in the x-direction.

14. The adjusting device for the fiberscope inside the high-voltage electrical equipment according to claim 12, characterized in that: A y This is represented within an eth element with n nodes: is the weight or contribution of node j in the e-th element, is the magnetic vector potential component at node j in the e-th element, is the component of the magnetic vector potential A in the e-th element in the y direction.

15. The adjusting device for the fiberscope inside the high-voltage electrical equipment according to claim 12, characterized in that: A z This is represented within an eth element with n nodes: is the weight or contribution of node j in the e-th element, is the magnetic vector potential component at node j in the e-th element, is the component of the magnetic vector potential A in the e-th element in the z direction.

16. The adjusting device for the fiberscope inside the high-voltage electrical equipment according to claim 13, characterized in that: The magnetic field intensity is related to the magnetic vector potential component in the eth element. The partial derivative of is: is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution, The x-offset vector of the relationship between the magnetic field strength F and the magnetic field distribution in the e-th element.

17. The adjusting device for the fiberscope inside the high-voltage electrical equipment according to claim 14, characterized in that: The magnetic field intensity is related to the magnetic vector potential component in the eth element. The partial derivative of is: is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution, The y offset vector of the relationship between the magnetic field intensity F and the magnetic field distribution in the e-th element, The energy density in the e-th element, is the component of the magnetic vector potential A in the e-th element in the x direction, is the component of the magnetic vector potential A in the e-th element in the y direction, is the component of the magnetic vector potential A in the e-th element in the z direction.

18. The adjusting device for the fiberscope inside the high-voltage electrical equipment according to claim 15, characterized in that: The magnetic field intensity is related to the magnetic vector potential component in the eth element. The partial derivative of is: is the coefficient matrix describing the relationship between partial derivatives and magnetic field distribution, z offset vector of the relationship between the magnetic field intensity F and the magnetic field distribution in the e-th element, The energy density in the e-th element, is the component of the magnetic vector potential A in the e-th element in the x direction, is the component of the magnetic vector potential A in the e-th element in the y direction, is the component of the magnetic vector potential A in the e-th element in the z direction.

19. A computer-readable storage medium storing a computer program, wherein the computer program is used to execute the method for adjusting a fiberscope inside a high-voltage electrical device according to any one of claims 1 to 9.

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