Light-emitting device structure based on current gate light-emitting regulation and control

Abstract

The invention discloses a light-emitting device structure based on current gate light-emitting regulation and control, which relates to the field of photoelectric display and comprises a current gate structure and a light-emitting function structure, the light-emitting functional structure sequentially comprises a first conductive electrode layer, a first carrier transport layer, a light-emitting functional layer, a second carrier transport layer and a second conductive electrode layer; the current gate structure comprises a current gate electrode layer, a current gate current-limiting injection layer and a current gate transmission layer which are stacked in sequence; the current gate transmission layer is bordered with the first conductive electrode layer; when the device structure emits light, a first driving signal is applied between the conductive electrode layers to drive hole-electron recombination of the light-emitting function layer so as to emit light, and a bias driving signal is applied between the current gate electrode layer and the conductive electrode layers so as to control the migration amount of first carriers participating in recombination light emitting. The injection of electron carriers and hole carriers in the light-emitting functional layer can be regulated and controlled through the current gate structure, so that the light-emitting brightness or the light-emitting efficiency can be optimized.

Description

Technical Field

[0001] The invention relates to the field of optoelectronic display, and in particular to a light-emitting device structure based on current gate light emission regulation. Background Art

[0002] As a luminescent material, quantum dots have the advantages of narrow half-width, high color purity, extremely high quantum yield and full spectrum tunability. Therefore, quantum dot light-emitting diodes (QLEDs) have a great possibility of becoming a leader in the field of new display devices.

[0003] However, the luminous efficiency or brightness of QLED devices is greatly affected by the carrier recombination process. Different functional layers and quantum dots are usually used to achieve the optimal device efficiency. This experimental process requires a lot of time, materials and labor costs. In addition, there is often a mismatch between the electron mobility and the hole mobility in the light-emitting layer of the QLED device, resulting in an imbalance in the free carriers of the two, and a high device luminous efficiency cannot be achieved when they recombine. Correspondingly, OLED devices also have similar problems. Summary of the invention

[0004] In view of the shortcomings of the prior art, the technical problem to be solved by the present invention is to provide a light-emitting device structure based on current gate light emission regulation, aiming to achieve an improvement in light emission efficiency or light emission brightness through current gate light emission regulation.

[0005] To achieve the above-mentioned object, the present invention provides a light-emitting device structure based on current gate light emission regulation, the device structure comprising: a current gate structure and a light-emitting functional structure arranged in layers; the light-emitting functional structure sequentially stacked comprises: a first conductive electrode layer, a first carrier transport layer, a light-emitting functional layer, a second carrier transport layer, and a second conductive electrode layer; the current gate structure sequentially stacked comprises: the current gate electrode layer, the current gate current limiting injection layer, and the current gate transport layer;

[0006] The first carrier transport layer is used to transport the first carrier, and the second transport layer is used to transport the second carrier; the current gate transport layer borders the first conductive electrode layer; the first carrier and the second carrier repel each other into one of electrons and holes respectively;

[0007] When the device structure is in luminous operation, a first driving signal is applied between the first conductive electrode layer and the second conductive electrode layer to drive the hole-electron recombination of the light-emitting functional layer to emit light, and a second bias driving signal is applied between the current gate electrode layer and the first conductive electrode layer to control the migration amount of the first carriers participating in the composite luminescence, and to control the luminous brightness and / or luminous efficiency of the light-emitting functional layer.

[0008] In this technical solution, by setting a current gate, the current gate can drive the recombination of electron-hole pairs in the light-emitting functional layer in the original first conductive electrode layer and the second conductive electrode layer. At the same time, under the bias drive of the current gate, the carrier mobility can be regulated, and based on this, the luminous brightness and / or luminous efficiency of the light-emitting functional layer can be controlled. In addition, compared with the voltage gate, the current gate regulation has a higher driving efficiency, improves the response speed of the luminous brightness / luminous efficiency, and at the same time, the shielding effect of the conductive electrode layer is also smaller. In this technical solution, a current gate current limiting injection layer is also provided, which can limit the current between the first conductive electrode layer and the current gate electrode layer to avoid excessive inter-electrode current and burn out the device.

[0009] In a specific embodiment, the intrinsic mobility of the first carrier in the light-emitting functional layer is less than the intrinsic mobility of the second carrier, and the second bias driving signal applied by the current gate electrode layer relative to the first conductive electrode layer to increase the mobility of the first carrier is used to improve the luminous brightness and luminous efficiency of the light-emitting functional layer; wherein the intrinsic mobility refers to the mobility of the first carrier and the second carrier in the light-emitting functional layer when the second bias driving signal is not applied.

[0010] In this technical solution, according to the intrinsic mobility of electrons and holes in the light-emitting composite layer, gate regulation is performed on the first carrier side with less mobility to increase the mobility of the first carrier, thereby improving the luminous brightness and luminous efficiency.

[0011] In a specific embodiment, the intrinsic mobility of the first carrier in the light-emitting functional layer is greater than the intrinsic mobility of the second carrier, and the second bias driving signal is applied between the current gate electrode layer and the first conductive electrode layer to reduce the mobility of the first carrier, thereby improving the luminous efficiency of the light-emitting functional layer; wherein the intrinsic mobility refers to the mobility of the first carrier and the second carrier in the light-emitting functional layer when the second bias driving signal is not applied.

[0012] In this technical solution, according to the intrinsic mobility of electrons and holes in the light-emitting composite layer, gate control is performed on the first carrier side with higher mobility to reduce the migration amount of the first carrier, thereby improving the light-emitting efficiency.

[0013] In a specific embodiment, the light-emitting functional structure is LED, OLED or QLED; wherein, when the light-emitting functional structure is the OLED, a first carrier injection layer is further included between the first conductive electrode layer and the first carrier transport layer, and a second carrier injection layer is further included between the second conductive electrode layer and the second carrier transport layer.

[0014] In a specific embodiment, the first conductive electrode layer is a transparent conductive electrode, at least one of the second conductive electrode layer and the current gate electrode layer is a transparent conductive electrode, and the second conductive electrode layer or the current gate electrode layer corresponding to the light emitting side of the light emitting device structure is a transparent conductive electrode.

[0015] In a specific embodiment, the first carrier is a hole, the second carrier is an electron, the intrinsic mobility of the electron in the light-emitting functional layer is greater than the intrinsic mobility of the hole; the second bias driving signal is configured as:

[0016] The current gate electrode layer applies a positive potential relative to the first conductive electrode layer to increase the migration amount of the first carrier to the light-emitting functional layer, thereby increasing the hole-pair recombination amount and recombination efficiency of the light-emitting functional layer and improving the luminous brightness and luminous efficiency.

[0017] In this technical solution, since the intrinsic mobility of hole carriers is small, a positive potential is applied to the conductive electrode layer on the hole side through the current gate on the hole side to increase the mobility of hole carriers, thereby improving the luminous brightness and luminous efficiency.

[0018] In a specific embodiment, the first carrier is an electron, the second carrier is a hole, the intrinsic mobility of the electrons in the light-emitting functional layer is less than the intrinsic mobility of the holes, and the second bias drive signal is configured as follows: the current gate electrode layer applies a negative phase potential relative to the first conductive electrode layer to increase the migration amount of electrons to the light-emitting functional layer, so as to increase the hole-pair recombination amount and recombination efficiency of the light-emitting functional layer and improve the luminous brightness and luminous efficiency.

[0019] In this technical solution, since the intrinsic mobility of electron carriers is small, a negative phase potential is applied to the conductive electrode layer on the hole side through the current gate on the electron side, thereby increasing the mobility of electron carriers, improving the luminous brightness and luminous efficiency.

[0020] In a specific embodiment, the first carrier is an electron, the second carrier is a hole, and the intrinsic mobility of the electron in the light-emitting functional layer is greater than the intrinsic mobility of the hole;

[0021] Wherein, the second bias driving signal is configured as one of the following:

[0022] The current gate electrode layer applies a negative phase potential relative to the first conductive electrode layer to increase the migration amount of electrons to the light-emitting functional layer, so as to increase the hole-pair recombination amount of the light-emitting functional layer and improve the light-emitting brightness;

[0023] Or the current gate electrode layer applies a positive potential relative to the first conductive electrode layer to reduce the migration of electrons to the light-emitting functional layer, so as to improve the hole-pair recombination efficiency of the light-emitting functional layer and improve the light-emitting efficiency.

[0024] In this technical solution, the current gate is on the electron transport layer side corresponding to the high-mobility electron carrier (within the light-emitting composite layer). At this time, the current gate applies a negative potential to the conductive electrode layer to increase the luminous brightness. At the same time, the current gate applies a positive potential to the conductive electrode layer to reduce the amount of electron migration in the light-emitting composite layer, thereby balancing the migration of electrons and holes and improving the luminous efficiency.

[0025] In a specific embodiment, the first carrier is a hole, the second carrier is an electron, and the intrinsic mobility of the electron in the light-emitting functional layer is less than the intrinsic mobility of the hole;

[0026] Wherein, the second bias driving signal is configured as one of the following:

[0027] The current gate electrode layer applies a positive potential relative to the first conductive electrode layer to increase the migration amount of holes to the light-emitting functional layer, so as to increase the hole-pair recombination amount of the light-emitting functional layer and improve the light-emitting brightness;

[0028] Or the current gate electrode layer applies a negative phase potential relative to the first conductive electrode layer to reduce the migration of holes to the light-emitting functional layer, so as to improve the hole-pair recombination efficiency of the light-emitting functional layer and improve the light-emitting efficiency.

[0029] In this technical solution, the current gate is on the hole transport layer side corresponding to the hole carriers with high mobility (within the light-emitting composite layer). At this time, the current gate applies a positive potential to the conductive electrode layer to increase the luminous brightness. At the same time, the current gate applies a negative potential to the conductive electrode layer to reduce the amount of hole migration in the light-emitting composite layer, thereby balancing the migration of electrons and holes and improving the luminous efficiency.

[0030] In a second aspect of the present invention, a display panel based on current gate light emission regulation is provided, the panel comprising:

[0031] A panel array is formed by using a light-emitting device structure based on current gate light emission regulation as a unit as provided in the first aspect of the present invention.

[0032] In this technical solution, by setting a current gate, the current gate can drive the recombination of electron-hole pairs in the light-emitting functional layer in the original first conductive electrode layer and the second conductive electrode layer. At the same time, under the bias drive of the current gate, the carrier mobility can be regulated, and based on this, the luminous brightness and / or luminous efficiency of the light-emitting functional layer can be controlled. In addition, compared with the voltage gate, the current gate regulation has a higher driving efficiency, improves the response speed of the luminous brightness / luminous efficiency, and at the same time, the shielding effect of the conductive electrode layer is also smaller. In this technical solution, a current gate current limiting injection layer is also provided, which can limit the current between the first conductive electrode layer and the current gate electrode layer to avoid excessive inter-electrode current and burn out the device.

[0033] Beneficial effects of the present invention: The present invention sets a current gate, which can drive the recombination of electron-hole pairs in the original first conductive electrode layer and the second conductive electrode layer in the light-emitting functional layer. At the same time, under the bias drive of the current gate, the carrier mobility can be regulated, and based on this, the luminous brightness and / or luminous efficiency of the light-emitting functional layer can be controlled. In addition, compared with the voltage gate, the current gate regulation has higher driving efficiency, improves the response speed of the luminous brightness / luminous efficiency, and at the same time, the shielding effect of the conductive electrode layer is also smaller. In this technical solution, a current gate current limiting injection layer is also set, which can limit the current between the first conductive electrode layer and the current gate electrode layer to avoid excessive inter-electrode current and burn out the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 It is a schematic diagram of a light-emitting device structure based on current gate light emission regulation in a specific embodiment of the present invention;

[0035] Figure 2 It is a schematic diagram of the structure of a light-emitting device for improving the light-emitting efficiency by increasing minority carrier injection in another specific embodiment of the present invention;

[0036] Figure 3 It is a schematic diagram of the structure of a light-emitting device for improving light-emitting efficiency based on reducing majority carrier injection in another specific embodiment of the present invention;

[0037] Figure 4 It is a schematic diagram of a light-emitting device structure based on current gate light emission regulation based on OLED in a specific embodiment of the present invention;

[0038] Figure 5 is a schematic structural diagram of a light emitting device according to Embodiment 1 of the present invention;

[0039] Figure 6 is a schematic structural diagram of a light emitting device according to Embodiment 3 of the present invention;

[0040] Figure 7is a structural schematic diagram of a light emitting device structure driving mode 1 according to embodiment 3 of the present invention;

[0041] Figure 8 is a structural schematic diagram of a second driving mode of a light emitting device structure according to Embodiment 3 of the present invention;

[0042] Fig. 9 is a structural schematic diagram of a light emitting device structure driving mode 1 according to embodiment 4 of the present invention;

[0043] Fig.10 It is a structural diagram of the second driving mode of the light emitting device structure of embodiment 4 of the present invention. DETAILED DESCRIPTION

[0044] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0045] In the description of this patent, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing this patent and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this patent.

[0046] In the description of this patent, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", and "set" should be understood in a broad sense, for example, it can be fixedly connected or set, or it can be detachably connected or set, or connected or set in one piece. For ordinary technicians in this field, the specific meanings of the above terms in this patent can be understood according to specific circumstances.

[0047] The embodiment of the present invention provides a light emitting device structure based on current gate light emission regulation, such as Figure 1-Figure 10 As shown, the device structure includes: a stacked current gate structure 200 and a light-emitting functional structure 100; the light-emitting functional structure 100 is stacked in sequence to include: a first conductive electrode layer 101, a first carrier transport layer 102, a light-emitting functional layer 103, a second carrier transport layer 104, and a second conductive electrode layer 105; the current gate structure 200 is stacked in sequence to include: the current gate electrode layer 201, the current gate current limiting injection layer 202, and the current gate transport layer 203;

[0048] The first carrier transport layer 102 is used to transport the first carrier, and the second transport layer is used to transport the second carrier; the current gate transport layer 203 borders the first conductive electrode layer 101; the first carrier and the second carrier repel each other into one of electrons and holes;

[0049] When the device structure is in luminous operation, a first driving signal 301 is applied between the first conductive electrode layer 101 and the second conductive electrode layer 105 to drive the light-emitting functional layer 103 to recombine holes and electrons to emit light, and a second bias driving signal 302 is applied between the current gate electrode layer 201 and the first conductive electrode layer 101 to control the migration amount of the first carriers participating in the composite luminescence, and to control the luminous brightness and / or luminous efficiency of the light-emitting functional layer 103.

[0050] Typically, the current gate limiting injection layer 202 is used to control the current between the first conductive electrode layer 101 and the current gate electrode layer 201 to prevent the inter-electrode current from being too large and burning the device;

[0051] In the present invention, by setting a current gate electrode layer 201 and a current gate transport layer 203, and when a bias driving signal is applied, holes or electrons are controlled by the current gate and injected into the corresponding conductive electrode layer, thereby affecting the injection of holes or electrons corresponding to the light-emitting functional layer 103, and changing the carrier migration amount of the hole-electron recombination, so as to achieve the control of the luminous brightness and / or luminous efficiency.

[0052] like Figure 2-Figure 3 As shown, in the embodiment of the present invention, for the current gate structure 200, it can be set on the transport layer side of the carriers corresponding to the less intrinsic mobility in the light-emitting composite layer or on the transport layer side of the carriers corresponding to the more intrinsic mobility in the light-emitting composite layer. Accordingly, the current gate structure 200 is set on the transport layer side corresponding to the minority carriers. At this time, increasing the injection amount of minority carriers into the light-emitting functional layer 103 can improve the device's luminous brightness and luminous efficiency. Correspondingly, the current gate structure 200 is set on the transport layer side corresponding to the majority carriers. At this time, reducing the injection amount of carriers into the light-emitting functional layer 103 can improve the device's luminous efficiency (the corresponding luminous brightness will become weaker).

[0053] Typical, such as Figure 2As shown, the intrinsic mobility of the first carrier in the light-emitting functional layer 103 is less than the intrinsic mobility of the second carrier, and the current gate electrode layer 201 applies the second bias driving signal 302 relative to the first conductive electrode layer 101 to increase the mobility of the first carrier so as to improve the luminous brightness and luminous efficiency of the light-emitting functional layer 103; wherein the intrinsic mobility refers to the mobility of the first carrier and the second carrier in the light-emitting functional layer 103 when the second bias driving signal 302 is not applied.

[0054] Another typical example is Figure 3 As shown, the intrinsic mobility of the first carrier in the light-emitting functional layer 103 is greater than the intrinsic mobility of the second carrier, and the second bias driving signal 302 is applied between the current gate electrode layer 201 and the first conductive electrode layer 101 to reduce the mobility of the first carrier, thereby improving the luminous efficiency of the light-emitting functional layer 103; wherein, the intrinsic mobility refers to the mobility of the first carrier and the second carrier in the light-emitting functional layer 103 when the second bias driving signal 302 is not applied.

[0055] It is worth mentioning that in the embodiment of the present invention, the light-emitting functional structure 100 is LED, OLED or QLED; Figure 4 As shown, when the light-emitting functional structure 100 is the OLED, a first carrier injection layer is further included between the first conductive electrode layer 101 and the first carrier transport layer 102 , and a second carrier injection layer is further included between the second conductive electrode layer 105 and the second carrier transport layer 104 .

[0056] Furthermore, optionally, in an embodiment of the present invention, the first conductive electrode layer 101 is a transparent conductive electrode, at least one of the second conductive electrode layer 105 and the current gate electrode layer 201 is a transparent conductive electrode, and the second conductive electrode layer 105 or the current gate electrode layer 201 corresponding to the light emitting side of the light emitting device structure is a transparent conductive electrode.

[0057] Example 1

[0058] On the basis of the above, in the first embodiment of the present invention, if Figure 5 As shown, the current gate controlled light emitting device structure includes in sequence: a second conductive electrode layer 105, an electron-type second carrier transport layer 104, a light emitting functional layer 103, a hole-type first carrier transport layer 102, a first conductive layer, a hole-type current gate transport layer 203, a hole-type current gate current limiting injection layer 202, and a current gate electrode layer 201;

[0059] The first carrier is a hole, the second carrier is an electron, and the intrinsic mobility of the electron in the light-emitting functional layer 103 is greater than the intrinsic mobility of the hole; the second bias driving signal 302 is configured as:

[0060] The current gate electrode layer 201 applies a positive potential relative to the first conductive electrode layer 101 to increase the migration amount of the first carrier to the light-emitting functional layer 103, so as to increase the hole-pair recombination amount and recombination efficiency of the light-emitting functional layer 103 and improve the luminous brightness and luminous efficiency.

[0061] In Example 1, the majority carriers of the light-emitting functional layer 103 are electrons, and the first carriers are holes; when the second bias driving signal 302 applies a positive phase potential, the light-emitting efficiency and the light-emitting brightness can be increased at the same time.

[0062] Example 2

[0063] like Figure 6 As shown, in the second embodiment of the present invention, the current gate controlled light emitting device structure includes in sequence: a second conductive electrode layer 105, a hole-type second carrier transport layer 104, a light emitting functional layer 103, an electronic first carrier transport layer 102, a first conductive layer, an electronic current gate transport layer 203, an electronic current gate current limiting injection layer 202, and a current gate electrode layer 201;

[0064] The first carrier is an electron, the second carrier is a hole, the intrinsic mobility of the electrons in the light-emitting functional layer 103 is less than the intrinsic mobility of the holes (the majority carriers are holes), and the second bias drive signal 302 is configured as follows: the current gate electrode layer 201 applies a negative phase potential relative to the first conductive electrode layer 101 to increase the migration amount of electrons to the light-emitting functional layer 103, so as to increase the hole-pair recombination amount and recombination efficiency of the light-emitting functional layer 103 and improve the luminous brightness and luminous efficiency.

[0065] In the second embodiment, the majority carriers are holes and the first carriers are electrons. When the second bias driving signal 302 applies a negative phase potential, the luminous efficiency and the luminous brightness can be increased at the same time.

[0066] Example 3

[0067] like Figure 7-Figure 8 As shown, in the third embodiment of the present invention, the current gate controlled light emitting device structure includes in sequence: a second conductive electrode layer 105, a second carrier transport layer 104 for holes, a light emitting functional layer 103, an electronic first carrier transport layer 102, a first conductive layer, an electronic current gate transport layer 203, an electronic current gate current limiting injection layer 202, and a current gate electrode layer 201;

[0068] The first carrier is an electron, the second carrier is a hole, the intrinsic mobility of the electron in the light-emitting functional layer 103 is greater than the intrinsic mobility of the hole; the majority carrier is an electron;

[0069] The second bias driving signal 302 is configured as one of the following:

[0070] like Figure 7 As shown, the current gate electrode layer 201 applies a negative phase potential relative to the first conductive electrode layer 101 to increase the migration amount of electrons to the light-emitting functional layer 103, so as to increase the hole-pair recombination amount of the light-emitting functional layer 103 and improve the light-emitting brightness;

[0071] or Figure 8 As shown, the current gate electrode layer 201 applies a positive potential relative to the first conductive electrode layer 101 to reduce the migration of electrons to the light-emitting functional layer 103, so as to improve the hole-pair recombination efficiency of the light-emitting functional layer 103 and improve the light-emitting efficiency.

[0072] In Example 3, the majority carriers of the light-emitting functional layer 103 are electrons, and the first carriers are electrons; when the second bias driving signal 302 is a negative phase potential, electron injection is increased, and the luminous brightness is increased (efficiency is reduced); when the second bias driving signal 302 is a positive phase potential, electron injection is reduced, and the luminous efficiency is improved (brightness is reduced).

[0073] Example 4

[0074] like Figure 9-10 As shown, in the fourth embodiment of the present invention, the current gate controlled light emitting device structure includes in sequence: a second conductive electrode layer 105, an electronic second carrier transport layer 104, a light emitting functional layer 103, a hole-type first carrier transport layer 102, a first conductive layer, a hole-type current gate transport layer 203, a hole-type current gate current limiting injection layer 202, and a current gate electrode layer 201;

[0075] The first carrier is a hole, the second carrier is an electron, the intrinsic mobility of the electron in the light-emitting functional layer 103 is less than the intrinsic mobility of the hole; the majority carrier is a hole;

[0076] The second bias driving signal 302 is configured as one of the following:

[0077] The current gate electrode layer 201 applies a positive potential relative to the first conductive electrode layer 101 to increase the migration of holes to the light-emitting functional layer 103, thereby increasing the amount of hole-pair recombination in the light-emitting functional layer 103 and improving the light-emitting brightness;

[0078] Or the current gate electrode layer 201 applies a negative phase potential relative to the first conductive electrode layer 101 to reduce the migration of holes to the light-emitting functional layer 103, so as to improve the hole-pair recombination efficiency of the light-emitting functional layer 103 and improve the light-emitting efficiency.

[0079] In Example 4, the majority carriers of the light-emitting functional layer 103 are holes, and the first carriers are holes; when the second bias driving signal 302 applies a positive phase potential, hole injection is increased, and the luminous brightness is increased (efficiency is reduced); when the second bias driving signal 302 applies a negative phase potential, hole injection is reduced, and the luminous efficiency is improved (brightness is reduced).

[0080] In the second aspect of the present invention, a fifth embodiment is provided, that is, a display panel based on current gate light emission regulation is provided, the panel comprising:

[0081] A panel array composed of a light-emitting device structure based on current gate light emission regulation as a unit provided in any of the foregoing embodiments.

[0082] The preferred specific embodiments of the present invention are described in detail above. It should be understood that a person skilled in the art can make many modifications and changes based on the concept of the present invention without creative work. Therefore, any technical solution that can be obtained by a person skilled in the art through logical analysis, reasoning or limited experiments based on the concept of the present invention on the basis of the prior art should be within the scope of protection determined by the claims.

Claims

1. A light-emitting device structure based on current gate light emission regulation, characterized in that: The device structure comprises: a stacked current gate structure and a light-emitting functional structure; the light-emitting functional structure comprises: a first conductive electrode layer, a first carrier transport layer, a light-emitting functional layer, a second carrier transport layer, and a second conductive electrode layer; the current gate structure comprises: a current gate electrode layer, a current gate current limiting injection layer, and a current gate transport layer; The first carrier transport layer is used to transport the first carrier, and the second transport layer is used to transport the second carrier; the current gate transport layer borders the first conductive electrode layer; the first carrier and the second carrier repel each other into one of electrons and holes respectively; When the device structure is in luminous operation, a first driving signal is applied between the first conductive electrode layer and the second conductive electrode layer to drive the hole-electron recombination of the light-emitting functional layer to emit light, and a second bias driving signal is applied between the current gate electrode layer and the first conductive electrode layer to control the migration amount of the first carriers participating in the composite luminescence, and to control the luminous brightness and / or luminous efficiency of the light-emitting functional layer.

2. A light-emitting device structure based on current gate light emission control as claimed in claim 1, characterized in that: The intrinsic mobility of the first carrier in the light-emitting functional layer is less than the intrinsic mobility of the second carrier, and the second bias driving signal applied by the current gate electrode layer relative to the first conductive electrode layer to increase the mobility of the first carrier so as to improve the luminous brightness and luminous efficiency of the light-emitting functional layer; wherein the intrinsic mobility refers to the mobility of the first carrier and the second carrier in the light-emitting functional layer when the second bias driving signal is not applied.

3. A light-emitting device structure based on current gate light emission control as claimed in claim 1, characterized in that: The intrinsic mobility of the first carrier in the light-emitting functional layer is greater than the intrinsic mobility of the second carrier, and the second bias driving signal is applied between the current gate electrode layer and the first conductive electrode layer to reduce the mobility of the first carrier, thereby improving the luminous efficiency of the light-emitting functional layer; wherein the intrinsic mobility refers to the mobility of the first carrier and the second carrier in the light-emitting functional layer when the second bias driving signal is not applied.

4. A light-emitting device structure based on current gate light emission control as claimed in claim 1, characterized in that: The light-emitting functional structure is LED, OLED or QLED; wherein, when the light-emitting functional structure is the OLED, a first carrier injection layer is further included between the first conductive electrode layer and the first carrier transport layer, and a second carrier injection layer is further included between the second conductive electrode layer and the second carrier transport layer.

5. A light-emitting device structure based on current gate light emission control as claimed in claim 1, characterized in that: The first conductive electrode layer is a transparent conductive electrode, at least one of the second conductive electrode layer and the current gate electrode layer is a transparent conductive electrode, and the second conductive electrode layer or the current gate electrode layer corresponding to the light emitting side of the light emitting device structure is a transparent conductive electrode.

6. A light-emitting device structure based on current gate light emission control as claimed in claim 1, characterized in that: The first carrier is a hole, the second carrier is an electron, the intrinsic mobility of the electron in the light-emitting functional layer is greater than the intrinsic mobility of the hole; the second bias driving signal is configured as: The current gate electrode layer applies a positive potential relative to the first conductive electrode layer to increase the migration amount of the first carrier to the light-emitting functional layer, thereby increasing the hole-pair recombination amount and recombination efficiency of the light-emitting functional layer and improving the luminous brightness and luminous efficiency.

7. A light-emitting device structure based on current gate light emission control as claimed in claim 1, characterized in that: The first carrier is an electron, the second carrier is a hole, the intrinsic mobility of the electrons in the light-emitting functional layer is less than the intrinsic mobility of the holes, and the second bias drive signal is configured as follows: the current gate electrode layer applies a negative phase potential relative to the first conductive electrode layer to increase the migration amount of electrons to the light-emitting functional layer, so as to increase the hole-pair recombination amount and recombination efficiency of the light-emitting functional layer and improve the luminous brightness and luminous efficiency.

8. A light-emitting device structure based on current gate light emission control as claimed in claim 1, characterized in that: The first carrier is an electron, the second carrier is a hole, and the intrinsic mobility of the electron in the light-emitting functional layer is greater than the intrinsic mobility of the hole; Wherein, the second bias driving signal is configured as one of the following: The current gate electrode layer applies a negative phase potential relative to the first conductive electrode layer to increase the migration amount of electrons to the light-emitting functional layer, so as to increase the hole-pair recombination amount of the light-emitting functional layer and improve the light-emitting brightness; Or the current gate electrode layer applies a positive potential relative to the first conductive electrode layer to reduce the migration of electrons to the light-emitting functional layer, so as to improve the hole-pair recombination efficiency of the light-emitting functional layer and improve the light-emitting efficiency.

9. A light-emitting device structure based on current gate light emission control as claimed in claim 1, characterized in that: The first carrier is a hole, the second carrier is an electron, and the intrinsic mobility of the electron in the light-emitting functional layer is smaller than the intrinsic mobility of the hole; Wherein, the second bias driving signal is configured as one of the following: The current gate electrode layer applies a positive potential relative to the first conductive electrode layer to increase the migration amount of holes to the light-emitting functional layer, so as to increase the hole-pair recombination amount of the light-emitting functional layer and improve the light-emitting brightness; Or the current gate electrode layer applies a negative phase potential relative to the first conductive electrode layer to reduce the migration of holes to the light-emitting functional layer, so as to improve the hole-pair recombination efficiency of the light-emitting functional layer and improve the light-emitting efficiency.

10. A display panel based on current gate light emission regulation, characterized in that: The panel comprises: A panel array composed of a light-emitting device structure based on current gate light emission regulation as provided in any one of claims 1 to 9 as a unit.

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