Admittance Testing Method of Resonator and Resonator

Abstract

The present invention provides a method for testing the admittance of a resonator and a resonator. Among them, the testing method includes the following steps: obtaining a scattering parameter matrix file of the resonator to be tested; constructing a principle circuit of the real resonator according to the scattering parameter matrix file; the real resonator is attached with parasitic effects; deriving an equation of the scattering parameters of the real resonator according to the principle circuit; calculating the admittance parameters of the real resonator through the equation for designing the real resonator. The method for testing the admittance of the resonator in the present invention not only has low cost but also can obtain more accurate admittance parameters.

Description

Technical Field

[0001] The present invention relates to the technical field of surface acoustic wave devices, and particularly to a method for measuring the admittance of a resonator and a resonator. Background Art

[0002] Surface acoustic wave devices have the advantages of small size, low noise, low loss, high performance, good stability, and compatible manufacturing processes, and are now widely used in fields such as medicine, telemetry technology, and communication.

[0003] Surface acoustic wave devices mainly consist of a piezoelectric substrate and a metal structure. With the development of radio frequency technology, surface acoustic wave filters are continuously evolving towards high quality factor, high electromechanical coupling coefficient, and high frequency. In the product development process, high-quality iteration can not only gain the upper hand but also reduce costs, and improving the accuracy of test data is an important way to achieve high-quality iteration.

[0004] The data testing of surface acoustic wave devices mainly relies on probe testing, and the parasitic effects generated by the loop ground metal structure in the probe test admittance will cause a difference between the test admittance and the true device admittance.

[0005] As a type of surface acoustic wave device, when testing the admittance of a resonator using existing technologies, the method of removing its parasitic effects requires designing a de-embedding structure for resonators with different structures and following the resonator through the wafer process, which results in a high cost for this testing method. Summary of the Invention

[0006] Aiming at the above deficiencies of the prior art, the present invention proposes a method for measuring the admittance of a resonator and a resonator to solve the problem of high cost in the method of measuring the admittance of a resonator using a probe in the prior art.

[0007] To solve the above technical problems, the present invention adopts the following technical solutions:

[0008] In a first aspect, the present invention provides a method for measuring the admittance of a resonator, which includes the following steps:

[0009] Obtain the scattering parameter matrix file of the resonator to be tested;

[0010] Construct a principle circuit of the true resonator according to the scattering parameter matrix file; the true resonator has parasitic effects added;

[0011] Derive the equation of the scattering parameters of the true resonator according to the principle circuit;

[0012] Calculate the admittance parameters of the true resonator through the equation for use in designing the true resonator.

[0013] Preferably, obtaining the scattering parameter matrix file of the resonator to be tested includes the following sub-steps:

[0014] Establish an electromagnetic simulation model of the resonator to be tested according to the layout of the real resonator; the resonator to be tested includes a bus bar generating parasitic effects, a ground port, an input port, an output port, and a simulation port;

[0015] Sweep the electromagnetic simulation model according to the operating frequency band of the real resonator to obtain the scattering parameter matrix file; the scattering parameter matrix file is a *.s3p file of the input port, output port, and simulation port of the resonator to be tested, and the *.s3p file includes scattering parameters at different frequencies.

[0016] Preferably, constructing a principle circuit including the real resonator according to the scattering parameter matrix file includes the following sub-steps:

[0017] Place the real resonator at the simulation port of the resonator to be tested;

[0018] Construct the principle circuit according to the *.s3p file, the input port of the real resonator, and the output port of the real resonator.

[0019] Preferably, the step of deriving the equation of the scattering parameters of the real resonator according to the principle circuit is specifically: deriving the equation according to the parasitic effects of the real resonator and the input and output relationships of the principle circuit.

[0020] Preferably, calculating the admittance parameters of the real resonator through the equation includes the following sub-steps:

[0021] Derive the calculation formula of the scattering parameters of the real resonator through the equation;

[0022] Calculate the scattering parameters of the real resonator according to the calculation formula;

[0023] Convert the scattering parameters of the real resonator into the admittance parameters of the real resonator.

[0024] Preferably, after calculating the admittance parameters of the real resonator through the equation, the following steps are further included: programming the calculation formula to obtain a calculation program.

[0025] Preferably, calculating the admittance parameters of the real resonator through the equation includes the following sub-steps:

[0026] Solve the equation by using a numerical method to obtain the scattering parameters of the real resonator;

[0027] Convert the scattering parameters of the real resonator into the admittance parameters of the real resonator.

[0028] Preferably, after obtaining the admittance parameters of the real resonator by calculating through the equation, the following steps are further included: programming the numerical method to obtain a calculation program.

[0029] In a second aspect, the present invention provides a resonator, and the admittance parameters of the resonator are obtained according to the admittance test method of the resonator as described above.

[0030] Compared with the prior art, the admittance test method of the resonator in the present invention sequentially obtains the scattering parameter matrix file of the resonator to be tested, constructs the principle circuit of the real resonator according to the scattering parameter matrix file, derives the equation of the scattering parameters of the real resonator according to the principle circuit, and calculates the admittance parameters of the real resonator through the equation for designing the resonator. Since this test method does not require designing a de-embedding structure and performing a chip fabrication, the cost is relatively low. In addition, this test method uses simulation technology to simulate the additional metal structures other than the resonator, and uses mathematical methods to remove the parasitic effects generated by the additional metal structures, so that more accurate admittance parameters can be obtained. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The present invention will be described in detail below with reference to the drawings. Through the detailed description in combination with the following drawings, the above or other aspects of the present invention will become clearer and easier to understand. In the drawings:

[0032] Figure 1 is a flowchart of the steps of the admittance test method of the resonator provided by the embodiment of the present invention;

[0033] Figure 2 is the layout of the resonator to be tested provided by the embodiment of the present invention;

[0034] Figure 3 is the principle circuit diagram of the additional parasitic effects of the real resonator provided by the embodiment of the present invention;

[0035] Figure 4 is a schematic diagram comparing the admittance parameters of the resonator to be tested before and after removing the parasitic effects provided by the embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs; the terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above drawings are intended to cover non-exclusive inclusion. The terms "first", "second", etc. in the specification and claims of this application or the above drawings are used to distinguish different objects and not to describe a specific order.

[0037] Reference to "embodiment" herein means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of this application. The phrase appearing in various places in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0038] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts belong to the scope of protection of the present invention.

[0039] Embodiment 1

[0040] The embodiment of the present invention provides a method for measuring the admittance of a resonator, as Figure 1 shown, which includes the following steps:

[0041] S1. Obtain the scattering parameter matrix file of the resonator to be tested.

[0042] Among them, obtaining the scattering parameter matrix file of the resonator to be tested includes the following sub-steps:

[0043] S11. Establish an electromagnetic simulation model of the resonator to be tested according to the layout of the real resonator.

[0044] As Figure 2 shown, the layout of the resonator to be tested includes a bus bar 1 (metal layer) that generates parasitic effects, a ground port 2, an input port 3 (input), an output port 4 (output), and a simulation port 5.

[0045] S12. Sweep the electromagnetic simulation model according to the operating frequency band of the real resonator to obtain the scattering parameter matrix file.

[0046] The scattering parameter matrix file is the *.s3p file (data obtained from simulation results) of the input port, output port, and simulation port of the resonator to be tested, and the *.s3p file includes scattering parameters (S parameters) at different frequencies.

[0047] There are multiple operating frequency bands, and 0 - 5GHz is one of them.

[0048] S2. Construct the principle circuit of the real resonator according to the scattering parameter matrix file.

[0049] Among them, the real resonator has the parasitic effects of the resonator to be tested added.

[0050] Constructing the principle circuit including the real resonator according to the scattering parameter matrix file includes the following sub - steps:

[0051] S21. Place the real resonator at the simulation port of the resonator to be tested.

[0052] After placing the real resonator at the simulation port of the resonator to be tested, that is, connecting the input port of the real resonator to the simulation port of the resonator to be tested and grounding the output port of the real resonator, which is equivalent to the real resonator not including busbars, grounding ports, input ports, output ports, and simulation ports, etc.

[0053] S22. Construct the principle circuit according to the *.s3p file, the input port of the real resonator, and the output port of the real resonator.

[0054] S3. Derive the equation of the scattering parameters of the real resonator according to the principle circuit.

[0055] Among them, the steps of deriving the equation of the scattering parameters of the real resonator according to the principle circuit are specifically as follows: Derive the equation according to the parasitic effects of the real resonator and the input - output relationship of the principle circuit.

[0056] The parasitic effects of the real resonator are the parasitic effects of the resonator to be tested, which are equivalent to the scattering parameters of the resonator to be tested.

[0057] S4. Calculate the admittance parameters of the real resonator through the equation.

[0058] Among them, after obtaining the admittance parameters of the real resonator, they can be used to design the real resonator.

[0059] Calculating the admittance parameters of the real resonator through the equation includes the following sub - steps:

[0060] S41. Derive the calculation formula of the scattering parameters of the real resonator through the equation.

[0061] The calculation formula is also called the analytical solution.

[0062] S42. Calculate the scattering parameters of the real resonator according to the calculation formula.

[0063] S43. Convert the scattering parameters of the real resonator into the admittance parameters of the real resonator.

[0064] When converting the scattering parameters of the real resonator into the admittance parameters of the real resonator, it can be converted through an open-source package because the scattering parameters of the real resonator and the admittance parameters of the real resonator can be interchanged.

[0065] After obtaining the admittance parameters of the real resonator by calculating through the equation, the following steps are further included: Program the calculation formula to obtain a calculation program. After obtaining the calculation program, it is convenient to directly use the calculation program to obtain the admittance parameters of the real resonator when designing the real resonator subsequently.

[0066] Another method for obtaining the admittance parameters of the real resonator by calculating through the equation includes the following sub-steps:

[0067] S411. Solve the equation by using a numerical method to obtain the scattering parameters of the real resonator.

[0068] S412. Convert the scattering parameters of the real resonator into the admittance parameters of the real resonator.

[0069] Correspondingly, after obtaining the admittance parameters of the real resonator by calculating through the equation, the following steps are further included: Program the calculation formula to obtain a calculation program.

[0070] In this embodiment, the principle circuit of the additional parasitic effect of the real resonator is as Figure 3 shown, including the input port 3 and output port 4 of the resonator to be tested, the battery simulation model 8, and the real resonator 9; According to the principle circuit and the scattering parameters, a set of equations for the scattering parameters of the real resonator can be deduced as follows:

[0071] ;

[0072] ;

[0073] ;

[0074] .

[0075] Among them, A11, A12, A21, and A22 are the scattering parameters of the resonator to be tested, sij (i = 1, 2, 3, j = 1, 2, 3) is the scattering parameter matrix file after electromagnetic simulation, and s44, s45, s54, and s55 are the scattering parameters of the real resonator or ideal resonator.

[0076] The numerical method is used to solve s44, s45, s54, and s55, and the results are converted into admittance parameters, as Figure 4 shown.

[0077] Compared with the prior art, the admittance test method of the resonator in this embodiment successively obtains the scattering parameter matrix file of the resonator to be tested, constructs the principle circuit of the real resonator according to the scattering parameter matrix file, derives the equation of the scattering parameters of the real resonator according to the principle circuit, and calculates the admittance parameters of the real resonator through the equation. Since this test method does not require designing a de-embedding structure and performing a chip flow, the cost is relatively low. In addition, this test method uses simulation technology to simulate the additional metal structure except the resonator, and uses mathematical methods to remove the parasitic effects generated by the additional metal structure, so that more accurate admittance parameters can be obtained.

[0078] Embodiment 2

[0079] This embodiment provides a resonator, and the admittance parameters of the resonator are obtained according to the admittance test method of the resonator in Embodiment 1 above.

[0080] Since the admittance parameters of the resonator in this embodiment are obtained according to the admittance test method of the resonator in Embodiment 1 above, it can also achieve the technical effects achieved by the admittance test method of the resonator in Embodiment 1 above, which will not be elaborated here.

[0081] It should be noted that each of the embodiments described above with reference to the accompanying drawings is only used to illustrate the present invention and does not limit the scope of the present invention. Those of ordinary skill in the art should understand that any modification or equivalent replacement made to the present invention without departing from the spirit and scope of the present invention should be covered within the scope of the present invention. In addition, unless otherwise specified in the context, words in the singular form include the plural form, and vice versa. In addition, unless otherwise specified, all or part of any embodiment can be used in combination with all or part of any other embodiment.

Claims

1. A method for measuring the admittance of a resonator, characterized in that, The admittance test method for the resonator includes the following steps: Obtain the scattering parameter matrix file of the resonator to be tested; the layout of the resonator to be tested includes a bus bar that generates parasitic effects, a ground port, an input port, an output port, and a simulation port; Construct the principle circuit of the real resonator according to the scattering parameter matrix file; the real resonator has parasitic effects added, and the parasitic effects of the real resonator are equivalent to the scattering parameters of the resonator to be tested; Derive the equation of the scattering parameters of the real resonator based on the principle circuit and the scattering parameters of the resonator to be tested; Calculate the admittance parameters of the real resonator through the equation for designing the real resonator; The equation is as follows: ； ； ； ； Where A11, A12, A21, and A22 are the scattering parameters of the resonator to be tested, sij is the scattering parameter matrix file after electromagnetic simulation, i = 1, 2, 3, j = 1, 2, 3, and s44, s45, s54, s55 are the scattering parameters of the real resonator; Obtaining the scattering parameter matrix file of the resonator to be tested includes the following sub-steps: Establish an electromagnetic simulation model of the resonator to be tested according to the layout of the real resonator; Sweeping the electromagnetic simulation model according to the operating frequency band of the real resonator to obtain the scattering parameter matrix file; the scattering parameter matrix file is for the input port, output port, and simulation port of the resonator to be tested file, and the file includes scattering parameters at different frequencies; Constructing the principle circuit including the real resonator according to the scattering parameter matrix file includes the following sub-steps: Place the real resonator at the simulation port of the resonator to be tested; According to the said document and the input port of the real resonator and the output port of the real resonator, construct the principle circuit.

2. The admittance test method of the resonator according to claim 1, characterized in that, The step of deriving the equation of the scattering parameters of the real resonator based on the principle circuit is specifically: Derive the equation based on the parasitic effects of the real resonator and the input and output relationships of the principle circuit.

3. The admittance test method for the resonator according to claim 1, characterized in that, Calculating the admittance parameters of the real resonator through the equation includes the following sub-steps: Derive the calculation formula of the scattering parameters of the real resonator through the equation; Calculate the scattering parameters of the real resonator according to the calculation formula; Convert the scattering parameters of the real resonator into the admittance parameters of the real resonator.

4. The admittance test method of the resonator according to claim 3, characterized in that, After calculating the admittance parameters of the real resonator through the equation, the following steps are further included: Program the calculation formula to obtain a calculation program.

5. The admittance test method of the resonator according to claim 1, characterized in that Calculating the admittance parameters of the real resonator through the equation includes the following sub-steps: Solve the equation using a numerical method to obtain the scattering parameters of the real resonator; Convert the scattering parameters of the real resonator into the admittance parameters of the real resonator.

6. The admittance test method of the resonator according to claim 5, characterized in that, Calculating the admittance parameters of the real resonator through the equation further includes the following steps: Program the numerical method to obtain a calculation program.

7. A resonator, characterized in that, The admittance parameters of the resonator are obtained according to the admittance test method of the resonator according to any one of claims 1 to 6.

Images