Particle deposition testing method and system for semiconductor parts

Abstract

The invention provides a particle deposition testing method and system for a semiconductor part, and relates to the technical field of semiconductor part testing, and the method comprises the steps: fixing a to-be-tested cold disc to a cold disc particle detection device; performing test strategy configuration according to the model information of the cold disc; loading a gas flow test strategy to a high-purity nitrogen supply module; introducing the high-purity nitrogen into a cold disc particulate matter detection device; the high-purity nitrogen flows through the internal flow channel of the to-be-tested cold disc and then gradually flows into the particle detection equipment cluster from the gas outlet through the distributor; carrying out test data acquisition on the particle detection equipment cluster; and performing multidimensional analysis on the particle deposition test data, and outputting a multivariate deposition test result. The technical problem that in the prior art, cleanliness detection on the interior of the semiconductor cold disc is not deep or accurate enough, and consequently the stability and reliability of detection data are low can be solved, detection is conducted through the cold disc particulate matter detection device, and the stability and reliability of the detection data are remarkably improved.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor component testing, and in particular to a particle deposition testing method and system for semiconductor components. Background Art

[0002] Semiconductor parts need to face a variety of complex environmental factors during the manufacturing and application process, among which the deposition of tiny particles is particularly prominent, which may come from physical contact, environmental pollution or electrostatic adsorption in the manufacturing process. Once particles are deposited on the surface or internal flow channel of semiconductor parts, they may have a serious impact on the performance of the parts, including reduced heat dissipation performance and increased electrical failures. Existing particle deposition test methods mainly rely on high-resolution imaging technology to observe the surface morphology and microstructure of the material and evaluate its surface defects and particles, but cannot observe the inside of the flow channel; or wipe the surface of the part with ethanol and then visually check whether the dust-free cloth is dirty, and cannot quantify the size and number of particles; or observe the surface of the parts under natural light or special lighting by professionals, and obvious particles and pollutants can be found, but the detection ability of tiny particles is limited. Existing technologies are insufficient in the identification and processing of abnormal data, and many particle detection devices lack effective abnormal detection and data screening mechanisms. When abnormal conditions occur during the detection process, the equipment may not be able to identify and process these abnormal data in time, resulting in errors in the results.

[0003] In summary, the prior art has a technical problem in that the cleanliness detection of the interior of the semiconductor cold plate is not in-depth or accurate enough, resulting in low stability and reliability of the detection data. Summary of the invention

[0004] The purpose of this application is to provide a particle deposition test method and system for semiconductor parts, so as to solve the technical problem in the prior art that the cleanliness detection of the inside of the semiconductor cold plate is not deep or accurate enough, resulting in low stability and credibility of the detection data.

[0005] In view of the above problems, the present application provides a particle deposition testing method and system for semiconductor parts.

[0006] In a first aspect, the present application provides a semiconductor part particle deposition test method, the semiconductor part particle deposition test method is implemented by a semiconductor part particle deposition test system, wherein the semiconductor part particle deposition test method comprises: fixing a cold plate to be tested to a cold plate particle detection device, wherein the cold plate to be tested is a semiconductor part, and a gas outlet of the cold plate particle detection device is pre-connected to a particle detection device cluster through a distributor; configuring a test strategy according to the cold plate model information of the cold plate to be tested to obtain a gas flow test strategy; loading the gas flow test strategy into a high-purity nitrogen supply module, wherein the high-purity nitrogen supply module The nitrogen valve is airtightly connected to the gas inlet of the cold plate particle detection device; the high-purity nitrogen supply module starts the nitrogen valve to introduce high-purity nitrogen into the cold plate particle detection device based on the gas flow test strategy; in the cold plate particle detection device, after the high-purity nitrogen flows through the internal flow channel of the cold plate to be tested, it gradually flows into the particle detection equipment cluster from the gas outlet via the distributor; after the high-purity nitrogen supply module stops executing the gas flow test strategy for a preset window, test data collection is performed on the particle detection equipment cluster to obtain particle deposition test data; the particle deposition test data is multi-dimensionally analyzed to output multivariate deposition test results.

[0007] In a second aspect, the present application further provides a semiconductor part particle deposition test system for executing a semiconductor part particle deposition test method as described in the first aspect, wherein the semiconductor part particle deposition test system comprises: a sample fixing module, the sample fixing module is used to fix the cold plate to be tested to the cold plate particle detection device, wherein the cold plate to be tested is a semiconductor part, and the gas outlet of the cold plate particle detection device is pre-connected to the particle detection device cluster through a distributor; a strategy configuration module, the strategy configuration module is used to configure the test strategy according to the cold plate model information of the cold plate to be tested, and obtain the gas flow test strategy; a strategy loading module, the strategy loading module is used to load the gas flow test strategy to a high-purity nitrogen supply module, wherein the nitrogen valve of the high-purity nitrogen supply module is connected to the cold plate particle detection device. a nitrogen introduction module, wherein the high-purity nitrogen supply module is constrained by the gas flow test strategy, and the nitrogen valve is started to introduce high-purity nitrogen into the cold plate particle detection device; a gas distribution module, wherein in the cold plate particle detection device, high-purity nitrogen flows through the internal flow channel of the cold plate to be tested, and then gradually flows into the particle detection device cluster from the gas outlet via the distributor; a data acquisition module, wherein the data acquisition module is used to collect test data for the particle detection device cluster after the high-purity nitrogen supply module stops executing the gas flow test strategy for a preset window to obtain particle deposition test data; and a multidimensional analysis module, wherein the multidimensional analysis module is used to perform multidimensional analysis on the particle deposition test data and output multivariate deposition test results.

[0008] One or more technical solutions provided in this application have at least the following technical effects or advantages: The method comprises fixing a cold plate to be tested to a cold plate particle detection device, wherein the cold plate to be tested is a semiconductor part, and a gas outlet of the cold plate particle detection device is pre-connected to a particle detection device cluster through a distributor; configuring a test strategy according to the cold plate model information of the cold plate to be tested, and obtaining a gas flow test strategy; loading the gas flow test strategy to a high-purity nitrogen supply module, wherein a nitrogen valve of the high-purity nitrogen supply module is airtightly connected to a gas inlet of the cold plate particle detection device; the high-purity nitrogen supply module starts the nitrogen valve to introduce high-purity nitrogen into the cold plate particle detection device based on the gas flow test strategy; in the cold plate particle detection device, after high-purity nitrogen flows through an internal flow channel of the cold plate to be tested, it gradually flows into the particle detection device cluster from the gas outlet through the distributor; after the high-purity nitrogen supply module stops executing the gas flow test strategy for a period of time reaching a preset window, collecting test data for the particle detection device cluster to obtain particle deposition test data; performing multidimensional analysis on the particle deposition test data, and outputting a multivariate deposition test result. That is to say, by fixing the cold plate to be tested to the cold plate particle detection device, the test process is flexibly adjusted according to the cold plate model to ensure that the nitrogen passes through the internal flow channel of the cold plate and then captures the particles through the particle detection equipment cluster. After the preset time window, the particle detection equipment cluster is used to collect data and perform multi-dimensional analysis to extract the specific characteristics of particle deposition, thereby improving the stability and credibility of the detection data.

[0009] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented according to the contents of the specification, and in order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are specifically cited below. It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present application, nor is it intended to limit the scope of the present application. Other features of the present application will become easy to understand through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the technical solutions in the present application or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only exemplary, and for ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0011] Figure 1 A schematic diagram of a process flow of a particle deposition test method for semiconductor components of the present application; Figure 2This is a schematic structural diagram of a cold plate particle detection device in a particle deposition test method for semiconductor parts of the present application; Figure 3 This is a schematic structural diagram of a particle deposition testing system for semiconductor parts according to the present application.

[0012] Explanation of the accompanying drawings: support plate 1, POM partition 2, semiconductor cold plate 3, gas collection cover 4, positioning pin 5, gas end extension tube 6, gas receiving tube 7, load-bearing plate 8, bracket 9, sample fixing module 11, strategy configuration module 12, strategy loading module 13, nitrogen introduction module 14, gas distribution module 15, data acquisition module 16, multi-dimensional analysis module 17. DETAILED DESCRIPTION

[0013] This application solves the technical problem in the prior art that the stability and credibility of the test data are low due to the lack of in-depth or accurate cleanliness testing inside the semiconductor cold plate by providing a particle deposition test method and system for semiconductor parts. The cold plate to be tested is fixed to the cold plate particle detection device, and the test process is flexibly adjusted according to the cold plate model to ensure that nitrogen passes through the internal flow channel of the cold plate before being captured by the particle detection device cluster. After a preset time window, data is collected from the particle detection device cluster, and multi-dimensional analysis is performed to extract the specific characteristics of particle deposition, thereby improving the stability and credibility of the test data.

[0014] Below, the technical solutions in the present application will be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments of the present application. It should be understood that the present application is not limited to the example embodiments described herein. Based on the embodiments of the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present application. It should also be noted that, for the convenience of description, only the parts related to the present application are shown in the accompanying drawings, rather than all of them.

[0015] For example, please refer to the attached Figure 1 The present application provides a particle deposition test method for semiconductor parts, wherein the particle deposition test method for semiconductor parts is applied to a particle deposition test system for semiconductor parts, and the particle deposition test method for semiconductor parts specifically includes the following steps: S100: Fixing the cold plate to be tested to the cold plate particle detection device, wherein the cold plate to be tested is a semiconductor part, and the gas outlet of the cold plate particle detection device is pre-connected to a particle detection equipment cluster through a distributor.

[0016] The particle detection equipment cluster includes a laser particle counter, an image processing microscopy module, an oscillation weighing module and an aerosol analyzer.

[0017] Specifically, obtain the cold plate test request of the cold plate to be tested, parse the cold plate test request, and determine the cold plate model information. The cold plate to be tested refers to a semiconductor part that needs to be tested for particle deposition on its surface or inside. In the semiconductor manufacturing process, the cold plate is an important component, and the deposition of particles on its surface or inside may affect the performance and quality of the product. Match the most suitable cold plate particle detection device according to the cold plate model information. At the same time, match the corresponding clamping control parameters according to the cold plate model information, including the initial clamping parameters and the layout clamping parameters, to ensure that the robot arm can clamp the cold plate in the correct way.

[0018] According to the cold plate test request of the cold plate to be tested, the initial position of the cold plate is determined. According to the cold plate particle detection device, the device layout position, that is, the position where the cold plate needs to be fixed, is determined. Through the initial position of the cold plate, the device layout position of the cold plate particle detection device, and the clamping control parameters, the cold plate is transferred and controlled, and how to transfer the cold plate from the initial position to the detection device is planned, including the position coordinates, clamping parameters, and clamping speed, which together constitute the clamping control path. According to the clamping control path and the clamping control parameters, the cold plate to be tested is fixed to the cold plate particle detection device.

[0019] The cold plate particle detection device is a device used to detect the deposition of particles on the surface or inside of the cold plate. It contains multiple functional modules and is designed to monitor the presence of particle deposition on the cold plate in real time through different detection technologies to ensure the quality of semiconductor products. Figure 2As shown, the cold plate particle detection device includes a support plate 1, a POM partition 2, a semiconductor cold plate 3, a gas collecting cover 4, a positioning pin 5, a gas end extension tube 6, a gas receiving tube 7, a load-bearing plate 8, and a bracket 9. The support plate 1 is used to support the semiconductor cold plate 3 and ensure that it remains stable during the test; the POM partition 2 is a material used to isolate gas flow, and the POM (polyoxymethylene) partition 2 can prevent unnecessary airflow interference between the semiconductor cold plate 3 and the detection device; the semiconductor cold plate 3 is the cold plate to be tested, which is usually a key component in semiconductor production; the gas collection cover 4 is used to cover the semiconductor cold plate 3 and the gas inlet to ensure that the airflow does not overflow and can be accurately guided to the test equipment; the positioning pin 5 is used to fix the precise position of the semiconductor cold plate 3 in the cold plate particle detection device to avoid movement or deviation; the gas end extension pipe 6 is an extension pipe required when the gas flows to the test equipment, which is used to ensure the gas flow and flow rate; the gas receiving tube 7 collects the gas flowing through the semiconductor cold plate 3 and guides it to the particle detection equipment; the load-bearing plate 8 is a plate that bears the weight of the semiconductor cold plate 3 and other components to ensure that the cold semiconductor cold plate 3 is stable during the test; the bracket 9 is used to fix and support the structure of the entire detection device.

[0020] Place the semiconductor cold plate 3 to be tested on the support plate 1 of the cold plate particle detection device. The function of the support plate 1 is to fix the semiconductor cold plate 3 and provide a stable supporting force to ensure that the semiconductor cold plate 3 does not move during the test. The positioning pin 5 helps to accurately fix the semiconductor cold plate 3 in the appropriate position to avoid any displacement or error. The gas outlet of the cold plate particle detection device is connected to the particle detection device cluster through a distributor. The gas flow passes through the channel of the entire device from the cold plate. The distributor is responsible for distributing the airflow to multiple detection modules. The particle detection device cluster works in parallel through the distributor, and each device uses different principles and technologies to detect particle matter.

[0021] A particle detection equipment cluster refers to a combination of multiple devices used for particle detection. Each device has specific functions and works together to provide comprehensive particle detection capabilities. The particle detection equipment cluster includes a laser particle counter, an image processing microscopy module, an oscillating weighing module, and an aerosol analyzer. Among them, the laser particle counter measures the number and size of particles in real time through the principle of laser scattering; the image processing microscopy module is used to analyze the morphology and distribution of sampled particles; the oscillating weighing module estimates the number of deposited particles by measuring the total mass of the particles; and the aerosol analyzer is used to detect fine particles in the air and analyze the particle concentration and distribution trend in real time. Through the parallel work of the particle detection equipment cluster, information on multiple dimensions such as the number, size, morphology, mass, and type of particles is obtained at the same time, providing comprehensive analysis results, which not only improves the efficiency of particle detection, but also ensures the accuracy of detection.

[0022] S200: configuring a test strategy according to the cold plate model information of the cold plate to be tested, and obtaining a gas flow test strategy.

[0023] Specifically, the specific type of the cold plate is determined based on the cold plate model information of the cold plate to be tested, including parameters such as model, specification, and size. According to the cold plate model information, the test strategy is configured to select the most appropriate gas flow test strategy. Test strategy configuration refers to setting various parameters and conditions required for the test, including gas flow, flow rate, and flow direction, according to the cold plate model information, to ensure that the gas flow conditions during the test can meet the needs of cold plate particle detection. The gas flow test strategy refers to the gas flow control scheme designed to effectively collect particles on the surface or inside of the cold plate during the particle detection process, including gas flow (gas volume per unit time), gas flow rate (gas flow speed per unit time), and gas flow direction (gas flow path and direction). Different test requirements correspond to different flow strategies.

[0024] According to the surface characteristics and design requirements of the cold plate model information, multiple groups of different flow rates, flow velocities, and flow direction combinations are generated to form a gas flow test strategy. In order to meet the detection needs of different areas on the cold plate surface, multiple strategies are required to test different areas. After configuring the gas flow test strategy, ensure that the gas can fully flow through the internal structure of the cold plate without causing damage to the internal components. By configuring the test strategy according to the cold plate model information, it is possible to provide customized gas flow solutions for cold plates of different models, ensuring precise control of the airflow, thereby improving the efficiency and accuracy of particle detection.

[0025] S300: Loading the gas flow test strategy into a high-purity nitrogen supply module, wherein a nitrogen valve of the high-purity nitrogen supply module is airtightly connected to a gas inlet of the cold plate particle detection device.

[0026] Specifically, the gas flow test strategy formulated according to the cold plate model and detection requirements is transmitted to the high-purity nitrogen supply module so that the high-purity nitrogen supply module can provide precise gas flow control according to the gas flow test strategy. The gas flow test strategy (such as flow rate, flow rate, flow direction and other parameters) is transmitted to the high-purity nitrogen supply module through the central control unit. The high-purity nitrogen supply module automatically adjusts the flow rate and flow rate of nitrogen according to the gas flow test strategy to ensure that the gas flow meets the predetermined test requirements.

[0027] A high purity nitrogen supply module is a device used to provide high purity nitrogen, which is commonly used in electronic manufacturing and semiconductor testing. Nitrogen is often used in such tests because it is inert and will not react with the cold plate or other materials in the test equipment. The high purity nitrogen supply module controls the nitrogen flow, flow rate and flow direction to introduce high purity nitrogen into the cold plate particle detection device. The nitrogen valve of the high purity nitrogen supply module is airtightly connected to the gas inlet of the cold plate particle detection device. The gas inlet is an interface of the cold plate particle detection device, which is used to guide the gas flow into the device. After the gas enters from the inlet, it will pass through the air flow channel in the device, pass through the surface of the cold plate and collect particles, and finally enter the detection equipment. Sealing materials or special interface designs are usually used to ensure airtightness to avoid any leakage or instability of the test gas flow. Through the airtight connection, after the nitrogen flows into the gas inlet of the cold plate particle detection device, it will pass through the surface of the cold plate at a predetermined flow rate, flow rate and flow direction to help carry away particles. An airtight connection means that the connection between the two devices is tightly sealed to ensure that the gas will not leak. For gas flow testing, airtight connection is very important to ensure the stability and accuracy of gas flow during the test.

[0028] By loading the gas flow test strategy into the high-purity nitrogen supply module and ensuring the airtight connection between the nitrogen valve and the gas inlet, the gas flow can be precisely controlled throughout the test. When the high-purity nitrogen passes through the cold plate particle detection device, it effectively removes the particles on the surface or inside the cold plate, ensuring the collection and detection accuracy of the particles. At the same time, the airtight connection prevents gas flow leakage or instability, ensuring the accuracy of gas flow, thereby improving the reliability and accuracy of particle detection.

[0029] S400: The high-purity nitrogen supply module starts the nitrogen valve to introduce high-purity nitrogen into the cold plate particle detection device based on the gas flow test strategy.

[0030] Specifically, the preset gas flow test strategy is loaded into the high-purity nitrogen supply module, and the opening degree of the nitrogen valve is automatically adjusted according to the gas flow test strategy to control the nitrogen flow rate and flow velocity. The nitrogen valve is a key component in the high-purity nitrogen supply module, which is used to open and close and adjust the nitrogen flow rate to ensure that the flow accuracy in the test meets the strategy requirements. Nitrogen flows out from the outlet of the high-purity nitrogen supply module and enters the gas inlet of the cold plate particle detection device through an airtight connection. High-purity nitrogen enters the cold plate particle detection device through an airtight connection, forms a uniform flow on the surface of the cold plate, and brings the particles into the detection equipment. According to the gas flow test strategy, the high-purity nitrogen supply module can strictly control the nitrogen flow rate, flow velocity and flow direction to ensure that the particles on the surface of the cold plate can be effectively taken away.

[0031] S500: In the cold plate particle detection device, high-purity nitrogen flows through the internal flow channel of the cold plate to be tested, and then gradually flows into the particle detection equipment cluster from the gas outlet via a distributor.

[0032] Specifically, during the particle detection process, high-purity nitrogen enters the gas inlet of the cold plate particle detection device through the high-purity nitrogen supply module and flows through the internal flow channel of the cold plate. The flow channel design of the cold plate can effectively guide the airflow to cover all surfaces of the cold plate, ensuring that the airflow is in full contact with the surface of the cold plate. When the high-purity nitrogen flows through the internal flow channel of the cold plate, the airflow takes away the particles attached to the surface of the cold plate or in the flow channel through the precisely controlled flow rate and flow rate. These particles are blown by the airflow and gradually brought into the gas outlet. After passing through the gas outlet of the cold plate particle detection device, the airflow will flow into the distributor. The function of the distributor is to evenly distribute the airflow to multiple particle detection devices. The distributor will distribute the airflow to devices such as laser particle counters, image processing microscopy modules, oscillation weighing modules and aerosol analyzers to ensure that each device can obtain enough particle samples for analysis.

[0033] After the particles enter the various detection devices in the particle detection equipment cluster, these devices will perform multi-dimensional detection and analysis on the particles. The laser particle counter detects the number and size of particles through a laser beam; the image processing microscopy module analyzes the morphology of particles through high-definition imaging technology; the oscillating weighing module further evaluates the impact of particles by measuring the total mass of particles; the aerosol analyzer detects the concentration and distribution trend of particles through chemical analysis technology. Through the collaborative work of these devices, we can fully understand the situation of particles on the surface or inside the cold plate. When high-purity nitrogen passes through the internal flow channel of the cold plate, it can evenly take away the particles on the surface or inside the cold plate, avoid the residual particles caused by uneven airflow, and improve the collection efficiency of particles. The airflow is evenly distributed to each particle detection device through a distributor to ensure that each device can obtain enough particle samples for detection, thereby improving the comprehensiveness and accuracy of particle detection.

[0034] S600: After the duration of the high-purity nitrogen supply module stopping executing the gas flow test strategy reaches a preset window, collecting test data of the particle detection device cluster to obtain particle deposition test data.

[0035] Specifically, during the particle test, the high-purity nitrogen supply module starts according to the preset gas flow test strategy and ensures that nitrogen is introduced into the cold plate particle detection device at a specific flow rate, flow velocity and flow direction. When the high-purity nitrogen supply module stops executing the gas flow test strategy and reaches the preset time window, it means that the test has completed the control phase of the gas flow conditions and entered the data collection phase. The various tests of the particle detection equipment cluster are started through the DAQ (data acquisition system), and the time series data collection of the particle deposition process begins.

[0036] The test data of the laser particle counter, image processing microscopy module, oscillation weighing module and aerosol analyzer in the particle detection equipment cluster are collected in time series to obtain particle deposition test data. The particle deposition test data includes data information in multiple dimensions, such as the particle size distribution sequence, particle number sequence, and particle concentration sequence collected by the laser particle counter, the particle morphology sequence, particle size sequence, and particle distribution image sequence collected by the image processing microscopy module, the particle total mass sequence and mass growth rate sequence collected by the oscillation weighing module, and the particle concentration distribution sequence and dynamic concentration change curve collected by the aerosol analyzer.

[0037] Through the coordinated work of multiple detection equipment, the deposition process of particles is accurately monitored from multiple angles and dimensions, including its particle size, morphology, mass and concentration, etc., and various characteristics of particles (such as particle size, morphology, mass, etc.) are effectively analyzed. Multi-dimensional test data is provided, which can detect potential particle deposition problems in advance and provide data support for further improving the manufacturing process and product quality of semiconductor parts. The test results help reduce potential electrical performance failures and product defects caused by particle deposition, thereby improving production efficiency and product yield.

[0038] S700: Perform multi-dimensional analysis on the particle deposition test data and output multi-dimensional deposition test results.

[0039] Specifically, multidimensional analysis is performed on the particle deposition test data. Multidimensional analysis refers to a method of comprehensive analysis of multiple data dimensions, which is usually used to reveal the relationship between each dimension and its changing trend. In the particle deposition test, multidimensional analysis can simultaneously analyze data in multiple dimensions such as particle size, mass, and concentration to reveal the mutual influence between these data. The data collection time point is determined according to the test strategy execution sequence and the strategy execution interval scale. Multiple test devices call and compare data at these nodes to ensure data synchronization of different devices. Ensure that the data collected on different test devices are consistent in time, that is, correspond to the same synchronization node. At each synchronization node, data is called from the laser particle counter, image processing microscopy module, oscillation weighing module, and aerosol analyzer at the same time, including particle size distribution sequence, particle morphology sequence, particle mass time-varying sequence, and particle concentration distribution sequence.

[0040] Compare the test data of adjacent synchronous nodes and calculate the rate of change of the data. Compare the deposition test data of each synchronous node, calculate the rate of change between adjacent nodes, and obtain the time series change rate of multiple nodes. Pre-set a reasonable time series change scale, traverse the time series change rates of multiple nodes, and filter out the data points whose change rates exceed the preset node time series change scale. These data points are abnormal deposition test data. Based on the results of multidimensional analysis, multivariate deposition test results are generated, which not only presents the individual change trends of each data dimension (such as particle mass, morphology, concentration, etc.), but also reveals the relationship between different dimensions. Through visualization, all analyzed data are presented in the form of a panoramic view to help testers intuitively understand the overall behavior of particle deposition. Panoramic views usually use 3D charts, heat maps or other complex charts to show how data in multiple dimensions change over time. Through multidimensional analysis, testers can reveal the relationship between various factors in the particle deposition process, quickly identify the main factors affecting particle deposition, and effectively optimize the process.

[0041] Furthermore, the present application S100 includes: Receive a cold plate test request, and obtain the cold plate model information by parsing the cold plate test request; after forwarding the cold plate test request to the detection device allocation center, the detection device allocation center matches and dispatches the cold plate particle detection device according to the cold plate model information; matches the clamping control parameters according to the cold plate model information; performs transfer control analysis according to the clamping control parameters, the initial position of the cold plate to be tested, and the device layout position of the cold plate particle detection device, and outputs a clamping control path; starts the flexible robotic arm module with the clamping control parameters and the clamping control path as constraints, and transfers the cold plate to be tested to the cold plate particle detection device for fixing.

[0042] Specifically, a cold plate test request is usually automatically issued by a production line or quality control department, and contains cold plate model information, requesting a particle deposition test on a specific semiconductor part (cold plate). When a cold plate test request is received, the cold plate test request is parsed to obtain the model information of the cold plate. The cold plate model information is a unique identifier of the cold plate, which usually includes parameters such as model, specification, and size to determine the specific type of the cold plate.

[0043] The cold plate test request is forwarded to the detection device allocation center, and the appropriate cold plate particle detection device is matched according to the model information of the cold plate. The detection device allocation center is a centralized scheduling module, which is responsible for allocating and scheduling the corresponding detection devices according to the cold plate model information, and matching the cold plate particle detection device that best suits the model of cold plate according to the input cold plate model information. According to the cold plate model information, the corresponding clamping control parameters are matched to determine how to clamp the cold plate safely and stably to avoid damaging the cold plate or causing errors during the test. The clamping control parameters refer to the parameters that determine how to fix and clamp the cold plate, usually including the clamping force, clamping position, clamping angle, etc., to ensure that the cold plate is stable and not damaged during the test process.

[0044] According to the determined clamping control parameters, the initial position of the cold plate to be tested and the device layout position of the cold plate particle detection device, the clamping control path is calculated to ensure that the cold plate can accurately reach the detection device during the transfer process and that the clamping posture and position do not deviate. The device layout position of the cold plate particle detection device refers to the specific position of the cold plate particle detection device in the test environment, that is, the position where the cold plate particle detection device is fixed or installed. For example, the clamping control path may involve transferring from the starting point of the production line (the initial position of the cold plate) to the fixed position of the detection device (the device layout position of the cold plate particle detection device) through a flexible robotic arm. The clamping control path includes the initial position and initial clamping parameters of the cold plate, the device layout position and layout clamping parameters, and the clamping speed constraint, which refers to the path formed by each position point that the cold plate passes through from the initial position, including all spatial coordinates and time parameters during the clamping process.

[0045] The flexible robotic arm module is an automated device, usually composed of a robot arm, actuators, sensors, etc., which is used to perform precise gripping and transfer tasks according to a predetermined path or control parameters. The flexible robotic arm has high flexibility and can adapt to objects of various sizes and shapes. The flexible robotic arm module starts the transfer process according to the gripping control path and gripping control parameters, and accurately grips and transfers the cold plate to the position of the particle detection device according to the path control algorithm. By accurately receiving and parsing the cold plate test request, automatically matching the gripping parameters, and efficiently and stably transferring the cold plate to the particle detection device for testing through the flexible robotic arm module, errors caused by manual operation are avoided, and the stability of the cold plate during the test is ensured. At the same time, the degree of automation is improved, and the efficiency and accuracy of the test are improved.

[0046] Furthermore, the present application also includes the following steps: Perform clamping vector analysis at the initial position of the cold plate to obtain initial clamping coordinates; fit the clamping control parameter space to the initial clamping coordinates to obtain initial clamping parameters; perform clamping vector analysis at the device layout position to obtain layout clamping coordinates; fit the clamping control parameter space to the layout clamping coordinates to obtain layout clamping parameters; perform displacement trajectory fitting according to the initial position of the cold plate and the device layout position to obtain a clamping displacement trajectory; fit the initial clamping parameters and the layout clamping parameters to the clamping displacement trajectory to obtain the clamping control path; match the clamping speed constraint according to the cold plate model information, and use the clamping speed constraint to identify the clamping control path.

[0047] Specifically, a clamping vector analysis is performed at the initial position of the cold plate, and a mathematical model is used to calculate the spatial relationship between the clamping device and the cold plate to determine the initial clamping coordinates, that is, the position coordinates of the cold plate at the beginning of the clamping operation. The initial position of the cold plate refers to the position of the cold plate before the particle detection test, which is usually the starting position of the cold plate from the production line or storage area. For example, the initial position of the cold plate before the test may be the starting point of the production line. The clamping vector analysis is to analyze the spatial relationship between the clamping device and the cold plate through a mathematical model, calculate the position, direction and other factors during the clamping process, and ensure the accuracy and stability of the clamping action. The purpose of the clamping vector analysis is to determine how to accurately position and control the clamping device so that it can effectively clamp the cold plate and avoid errors or damage during the clamping and transfer process.

[0048] Fit the clamping control parameter space to the initial clamping coordinates, adjust the clamping control parameters according to the initial position of the cold plate, and select the most appropriate clamping parameters, such as clamping force, angle, etc., to ensure that the robot can correctly clamp the cold plate and obtain the initial clamping parameters. The specific fitting process includes spatial analysis based on the initial coordinates of the cold plate, and then calculating an optimal clamping force and clamping angle combination based on the material, shape and other characteristics of the cold plate. The selected clamping parameters (such as 7N clamping force, 45-degree clamping angle) will be used as the initial clamping parameters to ensure that the cold plate can be stably and safely clamped. The clamping control parameter space refers to the set of all possible clamping control parameters, including the range of parameters such as clamping force, clamping angle, and clamping position. The initial clamping parameters will be adjusted based on the characteristics of the cold plate model, shape, and weight, and are the most suitable initial clamping parameters for the cold plate to be tested.

[0049] Perform clamping vector analysis at the device layout position to obtain the layout clamping coordinates, that is, the clamping coordinates of the cold plate on the cold plate particle detection device. Similar to the aforementioned initial clamping coordinates, the difference is that the cold plate needs to be moved from the initial position to the detection device position. Similar to the fitting of the initial position, the clamping control parameter space is fitted to the layout clamping coordinates to ensure that the cold plate can be accurately clamped to the target position of the detection device. After obtaining the initial clamping parameters and the layout clamping parameters, calculate the displacement trajectory of the cold plate from the initial position of the cold plate to the device layout position to ensure that the cold plate can move smoothly and accurately during the transfer process. Displacement trajectory fitting is to calculate the path of the cold plate from the initial position to the layout position, and output the position change at each moment during the clamping movement. From the initial position of the cold plate to the device layout position, the clamping displacement trajectory of the cold plate may present a certain curve. The path is accurately calculated by fitting, so that the robotic arm can complete the clamping task smoothly and accurately.

[0050] The initial clamping parameters and layout clamping parameters are fitted to the clamping displacement trajectory to obtain the clamping control path. In other words, the initial and layout clamping parameters are combined to calculate a path that ensures the safe and accurate transfer of the cold plate. The corresponding clamping speed constraints are matched according to the cold plate model information to ensure that the clamping process is neither too fast (to avoid impact) nor too slow (to ensure efficiency). The clamping speed constraint refers to the upper and lower limits of the speed during the clamping and transfer process, which usually depends on the material, clamping force and position of the cold plate. The clamping control path is identified according to the clamping speed constraint. The clamping control path refers to the path formed by each position point passed by the cold plate from the initial position, including all spatial coordinates and time parameters during the clamping process. It is a complete path that integrates parameters such as clamping force, clamping angle, and clamping speed. Fitting and analysis ensure that the cold plate will not move too fast or too slow during the transfer process, avoiding the risks of collision or sliding.

[0051] Furthermore, the present application S600 includes: Based on the comprehensive test intensity, multiple test sub-strategies in the gas flow test strategy are sorted to obtain a test strategy execution sequence, wherein the test sub-strategies include gas flow rate, gas flow velocity, gas flow direction and gas flow duration; a strategy execution interval scale is preset, and the strategy execution interval scale and the test strategy execution sequence are used as constraints to intermittently control the high-purity nitrogen supply module to introduce high-purity nitrogen into the cold plate particle detection device; when the duration for which the high-purity nitrogen supply module stops executing the gas flow test strategy reaches a preset window, the laser particle counter, image processing microscopy module, oscillation weighing module and aerosol analyzer are tested through DAQ to obtain the particle deposition test data, wherein the particle deposition test data includes a particle size distribution sequence, a particle morphology sequence, a particle mass time-varying sequence and a particle concentration distribution sequence.

[0052] Specifically, comprehensive test intensity refers to the relative intensity of multiple test sub-strategies (such as flow rate, flow velocity, flow direction, and duration, etc.) in the gas flow test strategy, which comprehensively considers the indicators of gas flow flow rate, flow velocity, flow direction, and flow duration to evaluate the intensity of each test sub-strategy. A comprehensive test intensity evaluation is performed on multiple test sub-strategies in the gas flow test strategy, and the multiple test sub-strategies are sorted according to their intensity to obtain a test strategy execution sequence. The sorting is based on the comprehensive intensity of each sub-strategy's flow rate, flow velocity, flow direction, and duration, where the sub-strategy with weaker comprehensive intensity is ranked higher.

[0053] A strategy execution interval scale is pre-set, that is, the time interval or transition period between each test sub-strategy, which determines the time transition between different test sub-strategies to avoid the impact of too abrupt airflow changes on the test results. According to the strategy execution interval scale and the test strategy execution sequence, the high-purity nitrogen supply module is controlled to ensure that the high-purity nitrogen supply module intermittently starts or stops the airflow within the set time interval to simulate the airflow fluctuations that the cold plate may experience in different working stages.

[0054] When the duration of the high-purity nitrogen supply module stopping the execution of the gas flow test strategy reaches the preset window, it means that during the particle deposition test, the high-purity nitrogen supply module has supplied nitrogen to the cold plate particle detection device according to the predetermined test strategy (including flow rate, flow velocity, flow direction and other parameters), and has stopped supplying for a period of time, which is called the preset window. The particle deposition test data is obtained by performing time-series acquisition of the laser particle counter, image processing microscopy module, oscillation weighing module and aerosol analyzer through DAQ. DAQ is a data acquisition system that converts physical signals into digital signals so that various parameters in the semiconductor manufacturing process (such as temperature, current, voltage, etc.) can be accurately measured and monitored.

[0055] The four main particle detection devices (laser particle counter, image processing microscopy module, oscillation weighing module and aerosol analyzer) will provide different types of particle deposition data through the DAQ system to collect data, including particle size distribution sequence, particle number sequence and particle concentration sequence collected by the laser particle counter; particle morphology sequence, particle size sequence and particle distribution image sequence collected by the image processing microscopy module; particle total mass sequence and mass growth rate sequence collected by the oscillation weighing module; particle concentration distribution sequence and dynamic concentration change curve collected by the aerosol analyzer. Through the intermittent control of the high-purity nitrogen supply module, different gas flow conditions are simulated to more comprehensively evaluate the particle deposition. At the same time, detailed information about particulate matter is obtained by using a variety of particle detection equipment.

[0056] Further, the present application S700 includes: According to the test strategy execution sequence and the strategy execution interval scale, multiple test data synchronization nodes are located; the particle size distribution sequence, particle morphology sequence, particle mass time-varying sequence and particle concentration distribution sequence are synchronized by using the multiple test data synchronization nodes to obtain multiple node deposition test data; according to the adjacent relationship of the multiple test data synchronization nodes, the timing change rate of the multiple node deposition test data is calculated to obtain multiple node timing change rates; a node timing change scale is preset, and the multiple node timing change rates are traversed by using the node timing change scale to obtain W abnormal deposition test data from the multiple node deposition test data; the W abnormal deposition test data are jointly analyzed in timing to output the multivariate deposition test result.

[0057] Specifically, according to the test strategy execution sequence and the strategy execution interval scale, multiple test data synchronization nodes are determined, which are suitable for synchronizing the timing between different detection devices, ensuring that the test data collected from each device can correspond to the same time point and ensure the integrity of the data. Test data synchronization nodes refer to key nodes that synchronize data collection points based on a unified time standard or condition in multiple data acquisition devices. Multiple test devices call and compare data on these nodes to ensure data synchronization of different devices. Through multiple test data synchronization nodes, the particle data collected by different devices (such as laser particle counters, image processing microscopy modules, oscillating weighing modules, and aerosol analyzers) at the same time node are called in turn, including particle size distribution sequence, particle number sequence, particle concentration sequence, particle morphology sequence, particle size sequence, particle distribution image sequence, particle total mass sequence, mass growth rate sequence, particle concentration distribution sequence, dynamic concentration change curve and other information.

[0058] According to the adjacent relationship of multiple test data synchronization nodes, the time series change rate of each node is calculated to evaluate the particle deposition change rate between different time nodes. The time series change rate refers to the data change rate between two adjacent test data synchronization nodes. Usually, the change rate of each node is obtained by comparing the particle deposition between each node and its adjacent nodes. The larger the time series change rate, the more significant the change in the particle deposition process. For example, if the particle mass increases from 0.5μg to 1.0μg between two consecutive time nodes, and the time interval is 10 seconds, the time series change rate is (1.0-0.5) / 10=0.05μg / s. A change threshold is set in advance to quantify the change rate between different time nodes. When the time series change of a node exceeds this scale, it means that the data of the node may be abnormal. Traverse multiple node time series change rates and filter out nodes whose change rates exceed the preset node time series change scale. According to the screening results, W abnormal deposition test data are obtained, which are considered to represent abnormal changes in the deposition process.

[0059] The time series change rate of the particle size distribution sequence, particle morphology sequence, particle mass time-varying sequence and particle concentration distribution sequence is calculated respectively to obtain the unit time series change rate corresponding to each sequence. Similarly, the abnormal data corresponding to each sequence is screened through the node time series change scale, such as abnormal particle size distribution data, abnormal particle morphology data, abnormal particle mass data and abnormal particle concentration data. W abnormal deposition test data are updated through abnormal particle size distribution data, abnormal particle morphology data, abnormal particle mass data and abnormal particle concentration data to obtain P abnormal deposition update data. The P abnormal deposition update data are jointly analyzed, and the relationship between data of different dimensions is considered to obtain the multivariate deposition test results, providing a panoramic view of the multidimensional test results, and presenting the correlation between the data in a visual form.

[0060] By calculating the timing change rate of multiple synchronous nodes, abnormal particle deposition data can be automatically identified and screened. Timing joint analysis can integrate data from different test equipment to reveal the full picture of particle deposition, help better understand abnormal phenomena in the deposition process, and discover potential equipment failures or test condition deviations in advance, thereby optimizing the production process or correcting the test method, and improving the production quality and reliability of semiconductor parts.

[0061] Furthermore, the present application also includes the following steps: Taking the multiple test data synchronization nodes as constraints, the time series change rate of the particle size distribution sequence, particle morphology sequence, particle mass time-varying sequence and particle concentration distribution sequence is calculated to obtain multiple groups of single-dimensional time series change rates; by using the node time series change scale to traverse the multiple groups of single-dimensional time series change rates, the particle size distribution sequence, particle morphology sequence, particle mass time-varying sequence and particle concentration distribution sequence are screened to obtain abnormal particle size distribution data, abnormal particle morphology data, abnormal particle mass data and abnormal particle concentration data; the abnormal particle size distribution data, abnormal particle morphology data, abnormal particle mass data and abnormal particle concentration data are used to update the W abnormal deposition test data to obtain P abnormal deposition update data, wherein W is a positive integer less than P; joint change trend fitting is performed according to the P abnormal deposition update data, and the multivariate deposition test result is output.

[0062] Specifically, multiple test data synchronization nodes are used as constraints so that all test data (particle size, morphology, mass, concentration, etc.) can be compared and analyzed within the same time window. The time series change rate is calculated for the particle size distribution sequence, particle morphology sequence, particle mass time-varying sequence, and particle concentration distribution sequence to obtain multiple sets of single-dimensional time series change rates. The single-dimensional time series change rate refers to the time series change rate calculated for a single data sequence (such as particle size distribution, particle morphology, etc.). The preset node time series change scale is used to traverse multiple sets of single-dimensional time series change rates, and abnormal particle size distribution data, abnormal particle morphology data, abnormal particle mass data, and abnormal particle concentration data are screened from the particle size distribution sequence, particle morphology sequence, particle mass time-varying sequence, and particle concentration distribution sequence. In other words, the abnormal data of each sequence is screened out.

[0063] Combined with the new abnormal data, the original W abnormal deposition test data are updated to form a more complete and accurate abnormal data set. The P abnormal deposition update data include the overall abnormal data and the local abnormal data, which can obtain more abnormal pattern information. According to the P abnormal deposition update data, the joint change trend fitting is performed to obtain the multivariate deposition test results, providing a panoramic view of the multidimensional test results, and presenting the correlation between the data in a visual form.

[0064] According to the P abnormal deposition update data, the corresponding P test sub-strategies are matched in multiple test sub-strategies, that is, the test sub-strategies directly related to the P abnormal deposition update data. A joint change trend chart is drawn according to the P abnormal deposition update data, and the P test sub-strategies are added to the joint change trend chart to obtain the multivariate deposition test results, which shows the comprehensive situation of particle deposition under different test conditions, and helps to quickly identify the relationship and change trend between different data. In the panoramic view, particle mass, particle morphology and particle concentration may be displayed by curves or charts of different colors, and their trends over time and their correlation can be seen at a glance. Through time series joint analysis, the intrinsic correlation between different particle deposition data (such as particle mass, concentration, morphology, etc.) can be revealed, the key factors that cause abnormal particle deposition (such as flow rate, flow velocity, etc.) can be identified, and the test conditions can be optimized.

[0065] Furthermore, the present application also includes the following steps: P test sub-strategies for obtaining the P abnormal deposition update data are screened from the multiple test sub-strategies; a joint change trend graph is drawn according to the P abnormal deposition update data; and the P test sub-strategies are added to the joint change trend graph to obtain the multivariate deposition test result.

[0066] Specifically, P test sub-strategies directly related to the P abnormal deposition update data are screened out from multiple test sub-strategies, that is, these sub-strategies are the direct cause of abnormal deposition, helping to identify which test conditions lead to abnormal deposition. The screened abnormal deposition data are associated with the corresponding test sub-strategies to find out which test conditions (such as gas flow, flow rate, etc.) lead to these abnormal depositions, that is, P test sub-strategies. Based on the P abnormal deposition update data, a joint change trend graph is drawn to show the change trend of the mass, particle size, morphology and other characteristics of the particles under different test conditions (i.e., different sub-strategies).

[0067] Use data visualization tools to draw a joint change trend chart, and draw each data series into a curve according to time or test stage. Different data series can be represented by different colors or styles for easy distinction. In the joint change trend chart, mark the abnormal points related to P abnormal deposition update data. These abnormal points may appear as sudden changes, sharp rises or falls in the data. In the drawn joint change trend chart, add P test sub-strategies selected from multiple test strategies. Each test sub-strategy will correspond to a specific time point or time period and be associated with the corresponding particle deposition data (such as particle quality, particle morphology, etc.). The test data of each sub-strategy will be marked in the chart according to these time points. By observing the joint change trend chart and combining the results of P test sub-strategies, testers can analyze the changing trend of particle deposition. Under different test sub-strategies, the deposition rate, morphology, quality, etc. of particles will change differently. The multivariate deposition test results provide a panoramic view of the multidimensional test results, including a detailed analysis of particle deposition under different test sub-strategies, providing a basis for subsequent process optimization.

[0068] By screening and updating abnormal data multiple times, we can accurately identify those test sub-strategies that may cause abnormal particle deposition. Through multivariate deposition test results, we can obtain particle deposition analysis from multiple angles, such as particle size, particle morphology, mass and concentration, which helps to have a more comprehensive understanding of the particle deposition process, reveal potential problems and optimize the production process.

[0069] In summary, the particle deposition test method for semiconductor parts provided by the present application has the following technical effects: The method comprises fixing a cold plate to be tested to a cold plate particle detection device, wherein the cold plate to be tested is a semiconductor part, and a gas outlet of the cold plate particle detection device is pre-connected to a particle detection device cluster through a distributor; configuring a test strategy according to the cold plate model information of the cold plate to be tested, and obtaining a gas flow test strategy; loading the gas flow test strategy to a high-purity nitrogen supply module, wherein a nitrogen valve of the high-purity nitrogen supply module is airtightly connected to a gas inlet of the cold plate particle detection device; the high-purity nitrogen supply module starts the nitrogen valve to introduce high-purity nitrogen into the cold plate particle detection device based on the gas flow test strategy; in the cold plate particle detection device, after high-purity nitrogen flows through an internal flow channel of the cold plate to be tested, it gradually flows into the particle detection device cluster from the gas outlet through the distributor; after the high-purity nitrogen supply module stops executing the gas flow test strategy for a period of time reaching a preset window, collecting test data for the particle detection device cluster to obtain particle deposition test data; performing multidimensional analysis on the particle deposition test data, and outputting a multivariate deposition test result. That is to say, by fixing the cold plate to be tested to the cold plate particle detection device, the test process is flexibly adjusted according to the cold plate model to ensure that the nitrogen passes through the internal flow channel of the cold plate and then captures the particles through the particle detection equipment cluster. After the preset time window, the particle detection equipment cluster is used to collect data and perform multi-dimensional analysis to extract the specific characteristics of particle deposition, thereby improving the stability and credibility of the detection data.

[0070] Embodiment 2, based on the same inventive concept as the particle deposition test method for semiconductor parts in the aforementioned embodiment 1, the present application also provides a particle deposition test system for semiconductor parts, see the attached Figure 3 , the particle deposition test system for a semiconductor part comprises: A sample fixing module 11, the sample fixing module 11 is used to fix the cold plate to be tested to the cold plate particle detection device, wherein the cold plate to be tested is a semiconductor part, and the gas outlet of the cold plate particle detection device is pre-connected to the particle detection device cluster through a distributor; a strategy configuration module 12, the strategy configuration module 12 is used to configure the test strategy according to the cold plate model information of the cold plate to be tested, and obtain the gas flow test strategy; a strategy loading module 13, the strategy loading module 13 is used to load the gas flow test strategy to a high-purity nitrogen supply module, wherein the nitrogen valve of the high-purity nitrogen supply module is air-tightly connected to the gas inlet of the cold plate particle detection device; a nitrogen introduction module 14, the nitrogen introduction module 14 is used for the high-purity nitrogen supply module The block starts the nitrogen valve to introduce high-purity nitrogen into the cold plate particle detection device based on the gas flow test strategy as a constraint; the gas distribution module 15, the gas distribution module 15 is used in the cold plate particle detection device, after the high-purity nitrogen flows through the internal flow channel of the cold plate to be tested, it gradually flows into the particle detection equipment cluster from the gas outlet via the distributor; the data acquisition module 16, the data acquisition module 16 is used to collect test data for the particle detection equipment cluster after the time when the high-purity nitrogen supply module stops executing the gas flow test strategy reaches a preset window, so as to obtain particle deposition test data; the multidimensional analysis module 17, the multidimensional analysis module 17 is used to perform multidimensional analysis on the particle deposition test data and output multivariate deposition test results.

[0071] Furthermore, the sample fixing module 11 in the particle deposition testing system for semiconductor parts is also used for: Receive a cold plate test request, and obtain the cold plate model information by parsing the cold plate test request; after forwarding the cold plate test request to the detection device allocation center, the detection device allocation center matches and dispatches the cold plate particle detection device according to the cold plate model information; matches the clamping control parameters according to the cold plate model information; performs transfer control analysis according to the clamping control parameters, the initial position of the cold plate to be tested, and the device layout position of the cold plate particle detection device, and outputs a clamping control path; starts the flexible robotic arm module with the clamping control parameters and the clamping control path as constraints, and transfers the cold plate to be tested to the cold plate particle detection device for fixing.

[0072] Furthermore, the sample fixing module 11 in the particle deposition testing system for semiconductor parts is also used for: Perform clamping vector analysis at the initial position of the cold plate to obtain initial clamping coordinates; fit the clamping control parameter space to the initial clamping coordinates to obtain initial clamping parameters; perform clamping vector analysis at the device layout position to obtain layout clamping coordinates; fit the clamping control parameter space to the layout clamping coordinates to obtain layout clamping parameters; perform displacement trajectory fitting according to the initial position of the cold plate and the device layout position to obtain a clamping displacement trajectory; fit the initial clamping parameters and the layout clamping parameters to the clamping displacement trajectory to obtain the clamping control path; match the clamping speed constraint according to the cold plate model information, and use the clamping speed constraint to identify the clamping control path.

[0073] Furthermore, the sample fixing module 11 in the particle deposition testing system for semiconductor parts is also used for: The particle detection equipment cluster includes a laser particle counter, an image processing microscopy module, an oscillation weighing module and an aerosol analyzer.

[0074] Furthermore, the data acquisition module 16 in the particle deposition test system for semiconductor parts is also used for: Based on the comprehensive test intensity, multiple test sub-strategies in the gas flow test strategy are sorted to obtain a test strategy execution sequence, wherein the test sub-strategies include gas flow rate, gas flow velocity, gas flow direction and gas flow duration; a strategy execution interval scale is preset, and the strategy execution interval scale and the test strategy execution sequence are used as constraints to intermittently control the high-purity nitrogen supply module to introduce high-purity nitrogen into the cold plate particle detection device; when the duration for which the high-purity nitrogen supply module stops executing the gas flow test strategy reaches a preset window, the laser particle counter, image processing microscopy module, oscillation weighing module and aerosol analyzer are tested through DAQ to obtain the particle deposition test data, wherein the particle deposition test data includes a particle size distribution sequence, a particle morphology sequence, a particle mass time-varying sequence and a particle concentration distribution sequence.

[0075] Furthermore, the multidimensional analysis module 17 in the semiconductor component particle deposition test system is also used for: According to the test strategy execution sequence and the strategy execution interval scale, multiple test data synchronization nodes are located; the particle size distribution sequence, particle morphology sequence, particle mass time-varying sequence and particle concentration distribution sequence are synchronized by using the multiple test data synchronization nodes to obtain multiple node deposition test data; according to the adjacent relationship of the multiple test data synchronization nodes, the timing change rate of the multiple node deposition test data is calculated to obtain multiple node timing change rates; a node timing change scale is preset, and the multiple node timing change rates are traversed by using the node timing change scale to obtain W abnormal deposition test data from the multiple node deposition test data; the W abnormal deposition test data are jointly analyzed in timing to output the multivariate deposition test result.

[0076] Furthermore, the multidimensional analysis module 17 in the semiconductor component particle deposition test system is also used for: Taking the multiple test data synchronization nodes as constraints, the time series change rate of the particle size distribution sequence, particle morphology sequence, particle mass time-varying sequence and particle concentration distribution sequence is calculated to obtain multiple groups of single-dimensional time series change rates; by using the node time series change scale to traverse the multiple groups of single-dimensional time series change rates, the particle size distribution sequence, particle morphology sequence, particle mass time-varying sequence and particle concentration distribution sequence are screened to obtain abnormal particle size distribution data, abnormal particle morphology data, abnormal particle mass data and abnormal particle concentration data; the abnormal particle size distribution data, abnormal particle morphology data, abnormal particle mass data and abnormal particle concentration data are used to update the W abnormal deposition test data to obtain P abnormal deposition update data, wherein W is a positive integer less than P; joint change trend fitting is performed according to the P abnormal deposition update data, and the multivariate deposition test result is output.

[0077] Furthermore, the multidimensional analysis module 17 in the semiconductor component particle deposition test system is also used for: P test sub-strategies for obtaining the P abnormal deposition update data are screened from the multiple test sub-strategies; a joint change trend graph is drawn according to the P abnormal deposition update data; and the P test sub-strategies are added to the joint change trend graph to obtain the multivariate deposition test result.

[0078] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. Figure 1The particle deposition test method and specific examples of a semiconductor part in the first embodiment are also applicable to the particle deposition test system of a semiconductor part in the present embodiment. Through the detailed description of the particle deposition test method of a semiconductor part, those skilled in the art can clearly know the particle deposition test system of a semiconductor part in the present embodiment, so for the sake of brevity of the specification, it will not be described in detail here. For the system disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part description.

[0079] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

[0080] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application belong to the scope of the present application and its equivalent technology, the present application is also intended to include these modifications and variations.

Claims

1. A particle deposition test method for semiconductor parts, characterized in that: include: Fixing the cold plate to be tested to the cold plate particle detection device, wherein the cold plate to be tested is a semiconductor part, and the gas outlet of the cold plate particle detection device is pre-connected to the particle detection equipment cluster through a distributor; Performing test strategy configuration according to the cold plate model information of the cold plate to be tested to obtain a gas flow test strategy; Loading the gas flow test strategy into a high-purity nitrogen supply module, wherein a nitrogen valve of the high-purity nitrogen supply module is airtightly connected to a gas inlet of the cold plate particle detection device; The high-purity nitrogen supply module starts the nitrogen valve to introduce high-purity nitrogen into the cold plate particle detection device based on the gas flow test strategy; In the cold plate particle detection device, after high-purity nitrogen flows through the internal flow channel of the cold plate to be tested, it gradually flows from the gas outlet through the distributor into the particle detection device cluster; After the duration of the high-purity nitrogen supply module stopping executing the gas flow test strategy reaches a preset window, collecting test data of the particle detection device cluster to obtain particle deposition test data; The particle deposition test data is subjected to multidimensional analysis to output multivariate deposition test results.

2. A particle deposition test method for semiconductor parts as claimed in claim 1, characterized in that: Fix the cold plate to be tested to the cold plate particle detection device, including: Receiving a cold plate test request, and obtaining the cold plate model information by parsing the cold plate test request; After forwarding the cold plate test request to the detection device allocation center, the detection device allocation center matches and dispatches the cold plate particle detection device according to the cold plate model information; Matching clamping control parameters according to the cold plate model information; Perform transfer control analysis according to the clamping control parameters, the initial position of the cold plate to be tested, and the device layout position of the cold plate particle detection device, and output a clamping control path; The flexible mechanical arm module is started with the clamping control parameters and the clamping control path as constraints, and the cold plate to be tested is clamped and transferred to the cold plate particle detection device for fixation.

3. A particle deposition test method for semiconductor parts as claimed in claim 2, characterized in that: The transfer control analysis is performed according to the clamping control parameters, the initial position of the cold plate to be tested, and the device layout position of the cold plate particle detection device, and the clamping control path is output, including: Perform clamping vector analysis at the initial position of the cold plate to obtain initial clamping coordinates; Fitting the clamping control parameter space to the initial clamping coordinates to obtain initial clamping parameters; Perform clamping vector analysis at the device layout position to obtain layout clamping coordinates; Fitting the clamping control parameter space to the layout clamping coordinates to obtain layout clamping parameters; Fitting the displacement trajectory is performed according to the initial position of the cold plate and the device layout position to obtain the clamping displacement trajectory; Fitting the initial clamping parameters and the layout clamping parameters to the clamping displacement trajectory to obtain the clamping control path; A clamping speed constraint is matched according to the cold plate model information, and the clamping speed constraint is used to identify the clamping control path.

4. A particle deposition test method for semiconductor parts as claimed in claim 1, characterized in that: The particle detection equipment cluster includes a laser particle counter, an image processing microscopy module, an oscillation weighing module and an aerosol analyzer.

5. A particle deposition test method for semiconductor parts as claimed in claim 4, characterized in that: After the duration of the high-purity nitrogen supply module stopping executing the gas flow test strategy reaches a preset window, test data collection is performed on the particle detection device cluster to obtain particle deposition test data, including: Based on the comprehensive test intensity, multiple test sub-strategies in the gas flow test strategy are sorted to obtain a test strategy execution sequence, wherein the test sub-strategies include gas flow flow rate, gas flow velocity, gas flow direction and gas flow duration; Preset the strategy execution interval scale, and use the strategy execution interval scale and the test strategy execution sequence as constraints to intermittently control the high-purity nitrogen supply module to introduce high-purity nitrogen into the cold plate particulate matter detection device; When the duration for which the high-purity nitrogen supply module stops executing the gas flow test strategy reaches a preset window, the laser particle counter, image processing microscope module, oscillation weighing module and aerosol analyzer are subjected to time-series test data acquisition through DAQ to obtain the particle deposition test data, wherein the particle deposition test data includes a particle size distribution sequence, a particle morphology sequence, a particle mass time-varying sequence and a particle concentration distribution sequence.

6. A particle deposition test method for semiconductor parts as claimed in claim 5, characterized in that: Perform multidimensional analysis on the particle deposition test data and output multivariate deposition test results, including: Locating a plurality of test data synchronization nodes according to the test strategy execution sequence and the strategy execution interval scale; Using the multiple test data synchronization nodes to perform data synchronization calls on the particle size distribution sequence, particle morphology sequence, particle mass time-varying sequence and particle concentration distribution sequence to obtain multiple node deposition test data; According to the adjacent relationship of the plurality of test data synchronization nodes, calculating the timing change rate of the plurality of node deposition test data to obtain a plurality of node timing change rates; Preset a node timing change scale, and traverse the plurality of node timing change rates by using the node timing change scale to screen and obtain W abnormal deposition test data from the plurality of node deposition test data; Perform time series joint analysis on the W abnormal deposition test data and output the multivariate deposition test result.

7. A particle deposition test method for semiconductor parts as claimed in claim 6, characterized in that: Performing a time series joint analysis on the W abnormal deposition test data and outputting the multivariate deposition test result includes: Taking the multiple test data synchronization nodes as constraints, calculating the time series change rate of the particle size distribution sequence, the particle morphology sequence, the particle mass time-varying sequence and the particle concentration distribution sequence to obtain multiple groups of single-dimensional time series change rates; By using the node time series change scale to traverse the multiple groups of single-dimensional time series change rates, the particle size distribution sequence, the particle morphology sequence, the particle mass time-varying sequence and the particle concentration distribution sequence are screened to obtain particle size distribution abnormal data, particle morphology abnormal data, particle mass abnormal data and particle concentration abnormal data; Using the abnormal particle size distribution data, the abnormal particle morphology data, the abnormal particle mass data and the abnormal particle concentration data to update the W abnormal deposition test data, to obtain P abnormal deposition update data, wherein W is a positive integer less than P; A joint variation trend fitting is performed based on the P abnormal deposition update data, and the multivariate deposition test result is output.

8. A particle deposition test method for semiconductor parts as claimed in claim 7, characterized in that: Performing joint variation trend fitting according to the P abnormal deposition update data and outputting the multivariate deposition test result includes: Filtering the P test sub-strategies to obtain the P abnormal deposition update data from the multiple test sub-strategies; Draw a joint change trend graph according to the P abnormal deposition update data; The P test sub-strategies are added to the joint change trend graph to obtain the multivariate deposition test result.

9. A particle deposition test system for semiconductor parts, characterized in that: The steps for implementing the particle deposition test method of a semiconductor component according to any one of claims 1 to 8, wherein the particle deposition test system of a semiconductor component comprises: A sample fixing module, wherein the sample fixing module is used to fix the cold plate to be tested to the cold plate particle detection device, wherein the cold plate to be tested is a semiconductor part, and the gas outlet of the cold plate particle detection device is pre-connected to the particle detection equipment cluster through a distributor; A strategy configuration module, the strategy configuration module is used to configure the test strategy according to the cold plate model information of the cold plate to be tested, and obtain the gas flow test strategy; A strategy loading module, the strategy loading module is used to load the gas flow test strategy into a high-purity nitrogen supply module, wherein a nitrogen valve of the high-purity nitrogen supply module is airtightly connected to a gas inlet of the cold plate particle detection device; A nitrogen introduction module, wherein the high-purity nitrogen supply module is used to start a nitrogen valve to introduce high-purity nitrogen into the cold plate particle detection device based on the gas flow test strategy; A gas distribution module, wherein the gas distribution module is used in the cold plate particle detection device to allow high-purity nitrogen to flow through the internal flow channel of the cold plate to be tested and then gradually flow into the particle detection device cluster from the gas outlet via a distributor; A data acquisition module, wherein the data acquisition module is used to collect test data of the particle detection device cluster to obtain particle deposition test data after the duration of the high-purity nitrogen supply module stopping the execution of the gas flow test strategy reaches a preset window; A multidimensional analysis module is used to perform multidimensional analysis on the particle deposition test data and output multivariate deposition test results.

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