VDMOSFET with low switching loss and preparation method thereof
By doping conductive dielectric into the drift layer of VDMOSFET and setting up a U-shaped diffusion layer and heavily doped diffusion layer, the problem of instability of existing VDMOSFETs under high voltage conditions is solved, and lower switching losses and higher stability are achieved.
CN119730332AInactive Publication Date: 2025-03-28HANGZHOU SPECTRUM SEMICON TECH CO LTD
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Patent Information
- Application Number
- CN202510221050.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-27
- Publication Date
- 2025-03-28
- Estimated Expiration
- Not applicable · inactive patent
AI Technical Summary
Technical Problem
Existing VDMOSFETs with low switching losses are unstable under high voltage conditions and are prone to voltage breakdown, affecting the performance and reliability of the device.
Method used
By doping conductive dielectric into the drift layer and setting a U-shaped diffusion layer and heavily doped diffusion layer outside the conductive diffusion medium, the structure and doping distribution of the device are optimized to improve the conductivity and voltage resistance characteristics.
Benefits of technology
It effectively reduces the on-resistance of the device, improves switching speed and efficiency, reduces switching losses, and improves the stability and electromagnetic compatibility of the device under high voltage conditions.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention relates to the technical field of MOS (metal oxide semiconductor), and discloses a VDMOSFET (vertical double-diffused metal oxide semiconductor field effect transistor) with low switching loss, which comprises a metal drain electrode, a metal source electrode, a semiconductor epitaxial layer, a grid electrode and a grid oxide layer covering the surface of the grid electrode, and is characterized in that the semiconductor epitaxial layer internally comprises a sinking layer, a drift layer, a P well layer, a highly doped P layer and an N well layer; a conducting medium is arranged in the drift layer and below the grid electrode, and the section contour of the conducting medium is semicircular; the conducting medium is made of one of silicon dioxide, aluminum oxide, zirconium oxide or titanium oxide, a U-shaped diffusion layer is further arranged on the outer side of the conducting medium, and the U-shaped diffusion layer is in contact with the P well layer. By doping the conductive medium, the conductivity of the drift layer can be increased, the resistance of the drift region is reduced, the on resistance of the device is reduced, and the efficiency of the device in the switching process is improved.
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