Particle analysis device and particle collection method for semiconductor processing equipment

By designing a particle analysis device for semiconductor process equipment, the problem of difficulty in collecting and analyzing particles in the prior art is solved, detailed analysis of particle properties and source judgment are achieved, and chip yield is improved.

CN119757166APending Publication Date: 2025-04-04NORTHEASTERN UNIV CHINA
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Patent Information

Application Number
CN202510220688.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-02-27
Publication Date
2025-04-04

AI Technical Summary

Technical Problem

The lack of effective particle collection and analysis devices in existing semiconductor process equipment makes it difficult to determine the main source of particles, thereby reducing the chip yield.

Method used

A particle analysis device for semiconductor process equipment is designed, including a first particle counter, a plasma chamber and a particle adsorption assembly. The device measures the particle concentration and particle size in the gas and carries charges on the surface of the particles. Then, the particle adsorption component is used to adsorb and collect charged particles to count the proportion of particles of different surface charge properties.

Benefits of technology

The analysis of the size, concentration, surface charge and chemical composition of particle pollution in semiconductor process equipment is achieved, providing a theoretical basis for judging the main source of particles and improving the judgment efficiency of staff.

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Abstract

The invention belongs to the technical field of semiconductor equipment, and relates to a particle analysis device for semiconductor processing equipment and a particle collection method.The device comprises a first particle counter, a plasma cavity and a particle adsorption assembly, and the first particle counter is used for measuring the particle concentration and particle size in gas; the plasma chamber comprises a shell, a first anode plate and a first cathode plate, a gap is formed between the first anode plate and the first cathode plate, gas and particles enter the space between the first anode plate and the first cathode plate, the gas is ionized, the surfaces of the particles carry charges, and the particle adsorption assembly comprises a second anode plate, a second cathode plate and an insulating part. A drainage channel is formed between the second anode plate and the second cathode plate, the second anode plate and the second cathode plate are used for adsorbing particles carrying charges, the proportion of particles with different surface charge properties is counted, the collected particles can be subsequently taken out, the morphology is observed, and chemical components are analyzed; and a theoretical basis is provided for source analysis of particle pollution in semiconductor processing equipment.
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