Power supply processing circuit with slow start, combination and high-side eFuse functions

Abstract

The invention discloses a power supply processing circuit with slow start, combination and high-side eFuse functions, and the circuit comprises a slow start module which is used for the slow start of a power supply, and the slow start time is linearly adjustable; the high-side current-limiting e-Fuse module is used for simulating a single over-current fusing function of a common fuse through two self-reset switches to carry out over-current protection when the total current of the circuit reaches a threshold value, or simulating a self-recovery fuse through a self-locking switch to carry out over-current protection in a hiccup protection mode; the low-power-consumption combination module is used for realizing low-power-consumption multi-path power supply combination through discrete semiconductor devices; and the front protection module is used for providing bypass spike pulse voltage and a reverse connection prevention function for each power supply branch. According to the circuit, the circuit design is simplified, the cost is reduced, a stable and reliable power supply is provided, and meanwhile, the circuit can be integrated into a specific board card.

Description

Technical Field

[0001] The invention relates to a power processing circuit between a functional circuit board card and an external direct current power supply, in particular to a power processing circuit with slow start, circuit combining and high-side eFuse functions. Background Art

[0002] In the prior art, the power processing requirements between the functional circuit board card and the external DC power supply often require a combination of multiple functional modules, which leads to problems such as complex circuits, large size and high cost.

[0003] The following is an explanation with specific examples:

[0004] A communication chassis is powered by multiple power modules. The boards in the chassis take +12V voltage from two power supplies in the chassis. The boards are sensitive to power consumption, so a low-power multi-power combiner module is needed. When there are other boards in the chassis, the rapid plug-in and unplugging between the board and the backplane or the strong jitter of the power feeding path when the board is inserted into the backplane can easily cause the fuse of the board to blow and other boards to reset abnormally. After analysis, adding a slow start circuit module to the board can effectively prevent the above problems. When a board generates a large current due to an abnormal internal circuit, it will cause irreversible effects on the board due to overcurrent and overheating. At the same time, the overcurrent will lower the power rail level of the chassis and make other boards unable to work normally. The common overcurrent protection scheme is to insert a fuse or PTC device in series in the power path, which has the disadvantages of being difficult to maintain, difficult to debug, and being greatly affected by the environment. Therefore, a simulated fuse circuit module is designed to play a high-side current limiting role. It is less affected by the ambient temperature rise and can simulate a self-recovery fuse (hiccup protection) and a single-blow fuse. Summary of the invention

[0005] In order to meet the power processing requirements between a circuit board card related to communication technology and an external DC power supply, the present invention provides a power processing circuit with soft start, closing and high-side eFuse functions to simplify circuit design, reduce costs, and provide stable and reliable power supply. At the same time, the circuit can also be integrated into a specific board.

[0006] To achieve the above object, the present invention adopts the following technical solutions:

[0007] In one embodiment of the present invention, a power processing circuit with slow start, circuit combining and high-side eFuse functions is proposed, the circuit comprising:

[0008] Slow start module, used for slow start of power supply, and the slow start time is linearly adjustable;

[0009] The high-side current limiting e-Fuse module is used to simulate the single overcurrent fusing function of ordinary fuses through two self-resetting switches to provide overcurrent protection when the total current of the circuit reaches the threshold, or to simulate the self-resetting current limiting device through the self-locking switch to provide overcurrent protection through the hiccup protection mode;

[0010] Low-power combining module, used to realize low-power multi-way power combining through discrete semiconductor devices;

[0011] The front protection module is used to provide bypass peak pulse voltage and reverse connection protection functions for each power supply branch.

[0012] Furthermore, in the high-side current limiting e-Fuse module, an amplifier is used to amplify the voltage drop across the detection resistor to perform overcurrent detection, and an alarm is given through an indicator light, and an alarm signal is reported at the same time.

[0013] Furthermore, the slow-start module includes a power PMOS tube, a front-stage RCD network, a potentiometer, a gate-drain RC loop and a capacitive load. The gate-drain capacitance is corrected by connecting a capacitor in parallel between the gate and the drain of the power PMOS tube, thereby increasing the Miller platform time when the power PMOS tube is turned on, and the slow-start time is linearly controlled by the potentiometer.

[0014] Furthermore, the high-side current limiting e-Fuse module includes a detection resistor, an overcurrent detection circuit, a switch circuit, a POMS tube, a load circuit and an overcurrent reporting circuit. The switch circuit includes self-reset switches S1 and S2 and a self-locking switch S3, which are open by default. When the self-locking switch S3 is in an open state, the self-reset switch S1 is pressed at the beginning of the module circuit, and the power supply turns on the thyristor rectifier through the current limiting resistor and keeps it in the on state. At this time, the transistor Q1 is turned on and generates a level close to 0V at the gate of the PMOS tube, and the PMOS tube is fully turned on; when the module circuit is in a steady state, the voltage drop generated by the load current at both ends of the detection resistor is amplified by a fully differential amplifier and biases the base of the transistor Q5; as the load current increases, the transistor Q5 will be turned on, the forward current of the thyristor rectifier will be reduced to close to zero, and then the thyristor rectifier will be blocked, the transistor Q1 will be turned off, and the gate of the POMS tube will be pulled up to 12V by the resistor, causing the POMS tube to enter the cut-off area, and the module circuit The module circuit is open-circuited, that is, the module circuit has the function of simulating the overcurrent melting of an ordinary fuse after the self-reset switch S1 is pressed once; when the load current does not exceed the preset threshold, the self-reset switch S2 can be manually pressed once to simulate the overcurrent melting of an ordinary fuse, that is, the module circuit has the function of simulating the immediate melting of an ordinary fuse after the self-reset switch S2 is pressed once; when the self-locking switch S3 is in a closed state, the self-reset switches S1 and S2 do not act, and when the load current does not exceed the preset threshold, the module circuit works normally, otherwise, the module circuit is open-circuited; then the load current will slowly decrease under the action of the capacitive load, and when the voltage drop across the detection resistor cannot turn on the transistor Q5 after being amplified, the thyristor rectifier is reopened under the action of the current limiting resistor, and then the transistor Q1 is turned on, and then the module circuit state repeats the above process, that is, the circuit has the function of overcurrent hiccup protection when the self-locking switch S3 is closed and the self-reset switches S1 and S2 do not act, and the load current is clamped at the preset threshold.

[0015] Furthermore, the load circuit is connected in parallel with the POMS tube to drive the overcurrent reporting circuit. When the circuit works normally, the LED indicator light is always on. When the circuit is abnormal, the LED indicator light flashes or goes out, and outputs an alarm signal to an external detection device.

[0016] Furthermore, the low power combining module includes at least two ideal diode circuits and an overvoltage protection circuit. The ideal diode circuit is composed of a current mirror circuit composed of a pair of PNP transistors of the same type controlling a PMOS tube.

[0017] Furthermore, the pre-protection module includes a decoupling capacitor, a bidirectional transient voltage suppression diode and a PMOS tube. The bidirectional transient voltage suppression diode provides a bypass spike pulse voltage for each power supply branch, and the PMOS tube provides an anti-reverse connection function for each power supply branch.

[0018] Beneficial effects:

[0019] 1. The present invention introduces a slow-start module with adjustable slow-start time characteristics, which can dynamically balance the impact current on the subsequent circuit when the power supply is started and the electrical stress of the slow-start device during the slow-start process, making the power supply startup process smoother and improving the stability and safety of the system.

[0020] 2. The e-Fuse module in the present invention plays the role of high-side current limiting, providing overcurrent protection for the entire power supply loop; compared with ordinary fuses, it has two modes: single overcurrent protection mode and automatic overcurrent hiccup protection mode. Compared with ordinary fuses, the advantages of this module are reusable and fast response speed, and compared with PTC tubes, it is less affected by the environment; using an amplifier to amplify the voltage drop signal at the detection resistor can reduce power consumption here; this module facilitates circuit debugging and improves the maintainability and operability of the circuit. The module also has a circuit status indicator light, that is, a circuit status reporting signal function.

[0021] 3. Compared with the power Schottky diode array method commonly used in the traditional multi-way power supply combining operation, the low-power combining module proposed in the present invention adopts discrete semiconductor devices to realize the low-power multi-way power supply combining operation, and also realizes the high-speed conversion between the branch conduction state and the open state, which effectively improves the efficiency and reliability of the system.

[0022] 4. The bidirectional transient voltage suppression diode of the pre-protection module in the present invention plays the role of bypassing the peak pulse voltage, and the PMOS tube has the function of preventing the power supply polarity from being reversed. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a block diagram of a power processing circuit with slow start, combining and high-side eFuse functions of the present invention;

[0024] Figure 2 It is a block diagram of the slow start module of the present invention;

[0025] Figure 3 It is a block diagram of the high-side current limiting e-Fuse module of the present invention;

[0026] Figure 4 It is a block diagram of the low power combining module of the present invention;

[0027] Figure 5 It is a schematic diagram of a power processing circuit with soft start, combining and high-side eFuse functions according to an embodiment of the present invention. DETAILED DESCRIPTION

[0028] The principles and spirit of the present invention will be described below with reference to several exemplary embodiments. It should be understood that these embodiments are provided only to enable those skilled in the art to better understand and implement the present invention, and are not intended to limit the scope of the present invention in any way. On the contrary, these embodiments are provided to make the present disclosure more thorough and complete, and to fully convey the scope of the present disclosure to those skilled in the art.

[0029] Those skilled in the art will appreciate that the embodiments of the present invention may be implemented as a system, device, apparatus, method or computer program product. Therefore, the present disclosure may be specifically implemented in the following forms, namely: complete hardware, complete software (including firmware, resident software, microcode, etc.), or a combination of hardware and software.

[0030] According to the embodiment of the present invention, a power processing circuit with slow start, combination and high-side eFuse functions is proposed. First, in order to reduce the impact on the subsequent circuit board card, a slow start module with adjustable slow start time is introduced; through the linearly adjustable slow start time, the influence of the slow start circuit is controlled to the greatest extent, while avoiding the damage to the circuit board card caused by sudden overload of the power supply, thereby improving the stability and reliability of the system; the smooth start of the power supply can facilitate the power-on timing control of the subsequent circuit board card. Secondly, in order to protect the subsequent circuit board card from overcurrent, an e-Fuse module with hiccup protection and simulated manual switching fuse state is used to ensure the safe operation of the circuit board card. In addition, a low-power combination module is provided, which realizes the combination of multiple power supplies by using discrete semiconductor devices, thereby improving the availability and reliability of the system. Finally, in order to ensure the safe operation of this circuit and the subsequent circuit board card, a pre-protection module with bypass spike pulse voltage and anti-reverse connection function is added to each power supply branch; these pre-protection modules can effectively resist the spike pulses from the power supply to prevent it from damaging the circuit, and prevent incorrect reverse wiring, thereby ensuring the stable operation of the entire system.

[0031] The principle and spirit of the present invention are explained in detail below with reference to several representative embodiments of the present invention.

[0032] Figure 1 The power processing circuit block diagram of the present invention has the functions of slow start, circuit combination and high-side eFuse. Figure 1 As shown, it includes the following main functional modules:

[0033] Soft start module with adjustable soft start time: It realizes the soft start function of power supply, stabilizes the power output, reduces the impact on the subsequent circuit board card, and has linear adjustable soft start time, which can be widely used in subsequent circuits with different requirements.

[0034] e-Fuse module with two modes: single overcurrent protection mode and automatic overcurrent hiccup protection mode: When the total current of the circuit reaches the threshold, the e-Fuse module can be used to simulate the single overcurrent protection function of ordinary fuses through two self-resetting (touch) switches, and can also be used to simulate the self-recovery fuse through hiccup protection to limit the current through the self-locking switch. An amplifier is used to amplify the voltage drop across the detection resistor for high-side overcurrent detection. At the same time, the module circuit has the function of overcurrent indicator alarm and alarm signal reporting, which is used to remotely monitor the circuit status.

[0035] Low-power combining module: realizes the multi-way power combining function, realizes low-power multi-way power combining operation through discrete semiconductor devices, and provides reliable power supply.

[0036] Pre-protection module: Provides bypass peak pulse voltage and reverse connection protection functions for each power supply branch to ensure the safe operation of this module and the subsequent circuit board card.

[0037] The following is a detailed analysis of the operating principle of each module and the function of each component in the module.

[0038] like Figure 2 As shown, the slow start module includes a power PMOS tube and its peripheral circuits such as a front-stage RCD network, a potentiometer, a gate-drain RC loop and a capacitive load; Figure 5 As shown, the specific components are: front stage RCD network: R6, R8, C1, Schottky diode: D2, power PMOS tube: M3, potentiometer: R11 / R7, gate-drain RC loop: R10, C2, capacitive load: C3, and Zener diodes D3 and R9. The main idea of ​​the circuit is to correct the gate-drain parasitic capacitance C by connecting the capacitor C2 in parallel between the gate and drain of the power PMOS tube M3. gd , in order to significantly increase the Miller platform time when the power PMOS tube M3 is turned on, and the slow start time is linearly controlled by the potentiometer R7. In order to simplify the circuit analysis, it can be considered that C2, R10, R9 and the gate-source parasitic capacitance C gs (usually within 2nF) in parallel to eliminate the gate-source parasitic capacitance C gs The influence of C1, D2, R9 and gate-drain parasitic capacitance Cgd (usually nF level) in parallel to eliminate the gate-drain parasitic capacitance C gd The following constraints or requirements should be met when setting circuit parameters.

[0039] (1) The problem of excessive load current caused by the primary current at the moment of power-on. The power-on waveform can be approximately considered as a step signal. The circuit complies with the switching theorem, and C1, C2, and C3 can be equivalent to a short circuit. At the moment of power-on, an initial current will be formed in the R10 and C2 branches. In order to reduce the current stress parameters of the power PMOS tube M3 during the Miller platform period, the following should be met:

[0040]

[0041] Wherein, Vf is the forward conduction voltage drop of diode D2. Vth is the absolute value of the threshold voltage of M3. Vin is the input voltage, which specifically refers to +12V in the present invention.

[0042] (2) Gate series resistor: prevent circuit oscillation. The gate series resistor can be combined with the parasitic inductance of the routing and the equivalent input capacitance of the PMOS tube M3 to form an RLC series circuit, effectively reducing the LC self-oscillation at the gate of the PMOS tube M3. Increasing the resistance value can reduce the gain at the resonant frequency, increase the cutoff frequency and slow down the turn-on of the PMOS tube M3. The recommended resistance value is 20 to 100 ohms.

[0043] (3) To prevent the PMOS tube M3 from being started up by mistake and generating a surge current when powered on, C2 should not be too large to prevent the capacitor voltage division from causing the gate-source voltage Vsg>Vth. The constraints are as follows:

[0044]

[0045] Vf is the forward conduction voltage drop of diode D2. Vth is the absolute value of the threshold voltage of M3.

[0046] Substituting common values ​​Vf=0.4V, Vth=2V, C1=1uF, C3=200uF, we can get C2 to be less than 153nF.

[0047] (4) During the Miller platform period, the process of the gate drive current charging the gate-source crossover capacitor is a negative feedback process: when the gate drive current is C gs The gate-source voltage difference decreases. Under the saturation transconductance constraint of the PMOS tube M3, the drain current decreases, the gate-drain voltage difference increases, and the gate drive current will be more C gd Charging without C gs Therefore, during the Miller platform period, the gate and source voltages remain unchanged, and the drain voltage rises linearly. The soft-start current constraint during the Miller platform period is as follows:

[0048]

[0049] Wherein, Iss is the slow-start current, and Vin is the input voltage, which specifically refers to +12V in the present invention.

[0050] (5) When the circuit is stable, R6 and R8 determine the Vsg of the PMOS tube M3 in steady state; the Zener diode D3 protects the source and gate of the PMOS tube M3 from being affected by the spike pulse voltage. The Zener diode D3 should be in the cut-off state in the circuit steady state.

[0051] (6) The maximum slow start time is determined according to the time required by the circuit's subsequent modules, and the minimum slow start time is determined according to the circuit's acceptable maximum slow start current and the range of the PMOS tube M3's safe operating area. Adding potentiometer R7 to the circuit can achieve linear adjustment of the slow start time.

[0052] like Figure 3 As shown, the high-side current limiting e-Fuse module includes a detection resistor, an overcurrent detection circuit, a switch circuit, a POMS tube, a load circuit and an overcurrent reporting circuit; Figure 5 As shown, the specific components are: detection resistor: R16, overcurrent detection circuit: C6, R22, R19, R15, R20, R17, Q5, switch circuit: R12, R13, S1, S2, S3, SCR1, R14, R23, Q1, POMS tube: M4, and the load circuit is the subsequent circuit. Figure 5There is no direct correspondence. The overcurrent reporting circuit includes R18, M5, LED, D6 and fully differential amplifier U2. S1 and S2 are self-resetting (touch) switches that are open by default, and S3 is a self-locking switch. This module circuit has two working modes: (1) Single overcurrent protection mode, in which S3 is required to remain open. When S1 is pressed at the beginning of the module circuit, the power supply turns on the silicon controlled rectifier SCR1 through the current limiting resistor R12 and keeps it on. At this time, the transistor Q1 is turned on and generates a level close to 0V at the gate of the PMOS tube M4, and the PMOS tube M4 is fully turned on. When the module circuit is in steady state, the voltage difference generated by the load current at both ends of the detection resistor R16 is amplified 10 times by the fully differential amplifier U2 and biases the base of the transistor Q5. As the load current increases, transistor Q5 will be turned on, and the forward current IH of the thyristor rectifier SCR1 will be reduced to near zero, thereby blocking SCR1, and transistor Q1 will be turned off. The gate of M4 will be pulled up to 12V by resistor R23, causing M4 to enter the cut-off region, and the module circuit will be open. The above description summarizes that the module circuit has the function of simulating the overcurrent melting of an ordinary fuse after S1 is pressed once; when the current does not exceed the set threshold, the switch S2 can also be manually pressed once to simulate the overcurrent melting of an ordinary fuse. The above description summarizes that the module circuit has the function of simulating the immediate melting of an ordinary fuse after S2 is pressed once. (2) Automatic overcurrent hiccup mode. In this mode, S3 is required to remain closed, and the self-reset switches S1 and S2 have no action. In this mode, when the load current does not exceed the preset threshold, the thyristor rectifier SCR1 remains on. When the load current exceeds the preset threshold, Q5 is forward biased, SCR1 is cut off, and then PMOS tube M4 is in the cut-off state. At this time, the load current slowly decreases under the action of the capacitive load. When the load current drops below the preset threshold, Q5 is cut off, SCR1 is turned on again under the action of R12, and then PMOS tube M4 is turned on. Under the excitation of the power supply, the load current climbs above the preset threshold, and then Q5 is forward biased... The circuit repeats the above process. The above description summarizes that the module circuit has the function of over-current hiccup protection when S3 is closed and S1 and S2 are not in action, and the load current is clamped at the current threshold. In summary, this module realizes the high-side current limiting function, and the rated current is Among them I lim is the current limit value, V BE It is the BE junction conduction voltage of transistor Q5. It should be noted that this circuit does not compensate for temperature. The BE junction voltage of transistor Q5 will produce temperature drift. Because the feedback circuit requires a certain reaction time, the margin should be considered when setting the current threshold. The load circuit is connected in parallel with the PMOS tube M5 to drive the overcurrent reporting circuit. When the circuit is working normally, the LED indicator is always on. When the LED flashes or goes out, it indicates that the circuit is abnormal and outputs an alarm signal to the external detection device.

[0053] like Figure 4As shown, the low power combiner module is composed of two (or more) ideal diode circuits, and the ideal diode circuit is composed of a current mirror circuit composed of a pair of PNP transistors of the same type controlling a PMOS tube; Figure 5 As shown, the specific devices are: PMOS tube: M1, amplifier: Q2A, Q2B, R1, R2 and PMOS tube: M2, amplifier Q3A, Q3B, R3, R4; in particular, R5 and D1 are the overvoltage protection circuit inside this module. The ideal diode circuit has good unidirectional conduction performance and optimizes the ordinary diode in terms of conduction power consumption and conduction state logic conversion. When a large current passes through the branch, the power consumption of the diode element is P = U × I, while the power consumption of the ideal diode circuit is P = I 2 ×R ds(on) , where R ds(on) It is the saturated conduction internal resistance of the power PMOS tube M1 or M2. The conduction internal resistance value of modern ultra-low resistance PMOS tubes can be controlled below 10m ohm, thereby achieving extremely low power consumption. When diode components are used for circuit combination, it can be seen from the diode volt-ampere characteristic curve that the unidirectional conduction characteristic formed by the voltage difference is not a rational curve. When the two input voltages differ by 0.2V, both diodes are in a conduction state to varying degrees, which further increases the power consumption of the circuit when combined. The current mirror structure in the ideal diode circuit can be equivalently understood as an open-loop gain amplifier. The voltage V after the combination is oring The emitters of Q2B and Q3B generate V on the base interconnection line through the inside of the transistor. oring -V be The level of Q2A and Q3A is different from the base current under the constraints of the emitter voltage and collector series resistance. If it is assumed that the emitter level of Q2A is higher than that of Q3A, then the base current of Q2A will be smaller than that of Q3A. Finally, the collector voltage of Q3B will be higher than that of Q2B, M1 tends to be turned on, M2 tends to be turned off, and finally the combined voltage tends to the voltage value of the high power rail. R5 and D1 play a role in current limiting protection. When the main power rail is 12V or higher and the backup power rail is 0V, the emitter-base PN junction of Q3A will be subjected to a large reverse voltage, and there may be a risk of reverse breakdown. After adding the R5 and D1 branches, R5 acts as a voltage divider and D1 acts as a current path.

[0054] The front protection module includes a decoupling capacitor, a bidirectional transient voltage suppression diode and a PMOS tube; Figure 5As shown in the figure, the specific components are: decoupling capacitors: C4 / C5, bidirectional transient voltage suppression diodes: D4 / D5, and PMOS tubes: M1 / M2. Decoupling capacitors C4 and C5 bypass the high-frequency noise output by the DC power supply, reducing the potential risk of self-oscillation of the subsequent transistors. Bidirectional transient voltage suppression diodes D4 and D5 play the role of bypassing the peak pulse voltage. The PMOS tubes M1 and M2 in the two branches have the function of preventing the power supply polarity from being reversed.

[0055] It should be noted that although several modules of the power processing circuit with slow start, closing and high-side eFuse functions are mentioned in the above detailed description, this division is only exemplary and not mandatory. In fact, according to an embodiment of the present invention, the features and functions of two or more modules described above can be concretized in one module. Conversely, the features and functions of one module described above can be further divided into multiple modules to be concretized.

[0056] The power processing circuit with slow start, closing circuit and high-side eFuse functions proposed in the present invention can dynamically balance the impact current on the subsequent circuit when the power is started and the electrical stress of the slow start device during the slow start process by introducing a slow start module with adjustable slow start time characteristics, so that the power start process is smoother and the stability and safety of the system are improved; the e-Fuse module plays the role of high-side current limiting and provides overcurrent protection for the entire power supply loop; compared with ordinary fuses, it has two modes: a single overcurrent protection mode and an automatic overcurrent hiccup protection mode. Compared with ordinary fuses, the module has the advantages of being reusable and having a fast response speed, and the advantage of being less affected by the environment compared with PTC tubes; using an amplifier to amplify The voltage drop signal at the detection resistor can reduce the power consumption at this point; the module facilitates circuit debugging and improves the maintainability and operability of the circuit. The module also has a circuit status indicator light, that is, a circuit status reporting signal function; compared with the power Schottky diode array method commonly used in the traditional multi-way power supply combination operation, the low-power combination module proposed in the present invention adopts discrete semiconductor devices, realizes low-power multi-way power supply combination operation, and also realizes high-speed conversion between the branch conduction state and the open state, which effectively improves the efficiency and reliability of the system; the bidirectional transient voltage suppression diode of the front protection module plays the role of bypassing the spike pulse voltage, and the PMOS tube has the function of preventing the power supply polarity from being reversed.

[0057] Although the spirit and principle of the present invention have been described with reference to several specific embodiments, it should be understood that the present invention is not limited to the disclosed specific embodiments, and the division of various aspects does not mean that the features in these aspects cannot be combined to benefit, and such division is only for the convenience of expression. The present invention is intended to cover various modifications and equivalent arrangements contained in the spirit and scope of the attached claims.

[0058] Regarding the limitation of the protection scope of the present invention, those skilled in the art should understand that, based on the technical solution of the present invention, various modifications or variations that can be made by those skilled in the art without creative work are still within the protection scope of the present invention.

Claims

1. A power processing circuit with slow start, closing and high-side eFuse functions, characterized in that: The circuit includes: Slow start module, used for slow start of power supply, and the slow start time is linearly adjustable; The high-side current limiting e-Fuse module is used to simulate the single overcurrent fusing function of ordinary fuses through two self-resetting switches to provide overcurrent protection when the total current of the circuit reaches the threshold, or to simulate the self-recovery fuse through the self-locking switch to provide overcurrent protection through the hiccup protection mode; Low-power combining module, used to realize low-power multi-way power combining through discrete semiconductor devices; The front protection module is used to provide bypass peak pulse voltage and reverse connection protection functions for each power supply branch.

2. The power processing circuit with slow start, combining and high-side eFuse functions according to claim 1, characterized in that: The high-side current limiting e-Fuse module detects overcurrent by amplifying the voltage drop across the detection resistor through an amplifier, and issues an alarm through an indicator light, while reporting the alarm signal.

3. The power processing circuit with slow start, combining and high-side eFuse functions according to claim 1, characterized in that: The slow start module includes a power PMOS tube, a front-stage RCD network, a potentiometer, a gate-drain RC loop and a capacitive load. The gate-drain capacitance is corrected by connecting a capacitor in parallel between the gate and the drain of the power PMOS tube, thereby increasing the Miller platform time when the power PMOS tube is turned on, and the slow start time is linearly controlled by the potentiometer.

4. The power processing circuit with slow start, combining and high-side eFuse functions according to claim 1, characterized in that: The high-side current limiting e-Fuse module includes a detection resistor, an overcurrent detection circuit, a switch circuit, a POMS tube, a load circuit and an overcurrent reporting circuit. The switch circuit includes self-reset switches S1 and S2 and a self-locking switch S3, which are open by default. When the self-locking switch S3 is in an open state, the self-reset switch S1 is pressed at the beginning of the module circuit, and the power supply turns on the thyristor rectifier through the current limiting resistor and keeps it in the on state. At this time, the transistor Q1 is turned on and generates a level close to 0V at the gate of the PMOS tube, and the PMOS tube is fully turned on; when the module circuit is in a steady state, the voltage drop generated by the load current at both ends of the detection resistor is amplified by a fully differential amplifier to bias the base of the transistor Q5; as the load current increases, the transistor Q5 will be turned on, the forward current of the thyristor rectifier is reduced to close to zero, and then the thyristor rectifier is blocked, the transistor Q1 is cut off, and the gate of the POMS tube will be pulled up to 12V by the resistor, causing the POMS tube to enter the cut-off area, and the module circuit is open, that is, the module circuit has an analog general current after the self-reset switch S1 is pressed once. When the load current does not exceed the preset threshold, the self-reset switch S2 can be manually pressed once to simulate the overcurrent melting of the ordinary fuse, that is, the module circuit has the function of simulating the immediate melting of the ordinary fuse after the self-reset switch S2 is pressed once; when the self-locking switch S3 is in the closed state, the self-reset switches S1 and S2 do not act, and when the load current does not exceed the preset threshold, the thyristor rectifier SCR1 remains in the on state; when the load current exceeds the preset threshold, Q5 is forward biased, SCR1 is turned off, and then the PMOS tube M4 is in the off state, at this time the load current slowly decreases under the action of the capacitive load, when the load current drops below the preset threshold, Q5 is turned off, SCR1 is turned on again under the action of R12, and then the PMOS tube M4 is turned on; under the excitation of the power supply, the load current climbs above the preset threshold, and the module circuit repeats the above process, that is, when the self-locking switch S3 is closed and the self-reset switches S1 and S2 do not act, the circuit has the function of overcurrent hiccup protection, and clamps the load current at the preset threshold.

5. The power processing circuit with slow start, combining and high-side eFuse functions according to claim 4, characterized in that: The load circuit is connected in parallel to the POMS tube to drive the overcurrent reporting circuit. When the circuit is working normally, the LED indicator light is always on. When the circuit is abnormal, the LED indicator light flashes or goes out, and outputs an alarm signal to an external detection device.

6. The power processing circuit with slow start, combining and high-side eFuse functions according to claim 1, characterized in that: The low-power combining module comprises at least two ideal diode circuits and an overvoltage protection circuit. The ideal diode circuit is composed of a current mirror circuit composed of a pair of PNP transistors of the same type controlling a PMOS tube.

7. The power processing circuit with slow start, combining and high-side eFuse functions according to claim 1, characterized in that: The front protection module includes a decoupling capacitor, a bidirectional transient voltage suppression diode and a PMOS tube. The bidirectional transient voltage suppression diode provides a bypass peak pulse voltage for each power supply branch, and the PMOS tube provides an anti-reverse connection function for each power supply branch.

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