Vertical cavity semiconductor optical amplifier and use method thereof

Abstract

The invention relates to a vertical cavity semiconductor optical amplifier and a use method thereof, and belongs to the technical field of semiconductor optical amplifiers, the vertical cavity semiconductor optical amplifier sequentially comprises an N-surface electrode, an N-surface insulating layer, a substrate, an active region, a P-surface insulating layer and a P-surface electrode, the N-surface electrode and the P-surface electrode both comprise a cathode, an anode and a discharge cavity, the cathode discharges to break down discharge gas in the discharge cavity to generate the low-temperature plasma electrode, a plurality of leakage holes are evenly distributed in the N-face insulating layer and the P-face insulating layer, the cathode and the anode are electrically connected with a discharge power source, and the N-face electrode and the P-face electrode are electrically connected with a driving power source. The technical problems that in the prior art, due to the current crowding effect, a vertical cavity semiconductor optical amplifier of an electric pump is limited in clear aperture, limited in amplification capacity and low in output power can be solved.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor optical amplifiers, and in particular relates to a vertical cavity semiconductor optical amplifier and a use method thereof. Background Art

[0002] Compared with traditional edge-emitting semiconductor optical amplifiers, vertical cavity semiconductor optical amplifiers not only have the advantages of small size and light weight, but also have natural advantages such as output circularly symmetrical light spot and easy fiber coupling, and have good application prospects. However, in the existing technology, the vertical cavity semiconductor optical amplifier using electrical pumping has limited light aperture due to the current crowding effect, thus limited amplification capacity and low output power; while the vertical cavity semiconductor optical amplifier using optical pumping requires a complex pumping optical system, which increases the complexity of the system and reduces the overall electro-optical efficiency. Summary of the invention

[0003] In view of the various deficiencies in the prior art, a vertical cavity semiconductor optical amplifier and a method of using the same are proposed to solve the technical problems in the prior art that the electrically pumped vertical cavity semiconductor optical amplifier has limited light aperture, limited amplification capability and low output power due to the current crowding effect.

[0004] To achieve the above object, the present invention provides the following technical solutions: In a first aspect, the present invention provides a vertical cavity semiconductor optical amplifier, which comprises an N-side electrode, an N-side insulating layer, a substrate, an active region, a P-side insulating layer and a P-side electrode in sequence, wherein the N-side electrode and the P-side electrode both comprise a cathode, an anode and a discharge cavity, wherein cathode discharge breaks down a discharge gas in the discharge cavity to generate a low-temperature plasma electrode, a plurality of leakage holes are evenly distributed on the N-side insulating layer and the P-side insulating layer, the cathode and the anode are electrically connected to a discharge power supply, respectively, and the N-side electrode and the P-side electrode are electrically connected to a driving power supply, respectively.

[0005] The technical solution is further configured such that a window is provided on the side of the plasma electrode away from the substrate.

[0006] The technical solution is further configured such that the discharge cavity is formed between the N-side window and the N-side insulating layer and between the P-side window and the P-side insulating layer, the cathode and the anode are both located inside the discharge cavity, and the discharge cavity is filled with a discharge gas.

[0007] The technical solution is further configured such that the side surfaces adjacent to the cathode and the anode are both configured in a sawtooth shape.

[0008] The technical solution is further configured such that the active region is a quantum dot active region or a quantum well active region.

[0009] The technical solution is further configured such that the substrate is a GaAs or GaN substrate.

[0010] The technical solution is further configured such that an N-type DBR is provided between the substrate and the active area, and a P-type DBR is provided between the P-side insulating layer and the active area.

[0011] The technical solution is further configured such that the distribution shape of the plurality of leakage holes is the same as the spot shape of the seed light.

[0012] In a second aspect, the present invention provides a method for using a vertical cavity semiconductor optical amplifier, comprising the following steps: S100, the discharge power supply is powered on, a strong electric field is generated near the cathode, and the electrons in the cathode material are ejected from the material surface and accelerated under the action of the strong electric field. When the electrons move toward the anode, they collide with the molecules / atoms of the discharge gas, causing an avalanche effect, generating a large number of ions and electrons. When passing through the leakage hole, a very small number of electrons are injected into the active area through the leakage hole, and the vast majority of electrons continue to move toward the anode, forming a full-caliber plasma electrode; S200, the driving power supply is powered on, and the electrons in the N-side discharge cavity enter the substrate through the leakage holes on the N-side insulating layer, flow through the active area, and enter the P-side discharge cavity through the leakage holes on the P-side insulating layer, forming a loop current; S300, when the seed light passes through the vertical cavity semiconductor optical amplifier, the active region generates stimulated radiation under the action of the seed light, and the seed light is output after gain. The technical solution is further configured as follows: in step S300, an N-type DBR is arranged between the substrate and the active area, a P-type DBR is arranged between the P-side insulating layer and the active area, and the seed light is output after multiple reflection gains of the two layers of reflectors, the P-type DBR and the N-type DBR.

[0013] The beneficial effects of the present invention are: By setting up the N-side discharge cavity and the P-side discharge cavity, the discharge between the anode and the cathode is realized to produce a full-aperture plasma electrode; by setting the leakage hole, the uniformity of the loop current injected into the active area is achieved; the plasma electrode can be diffused to any caliber, so a large aperture can be achieved, and the quality of the output beam can be guaranteed while improving the output power. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 is a front view of a vertical cavity semiconductor optical amplifier according to an embodiment of the present invention; Figure 2 is a top view of the leakage hole in an embodiment of the present invention; Figure 3 It is a front view of another implementation of the vertical cavity semiconductor optical amplifier in the embodiment of the present invention; Figure 4 for Figure 3 Side view of Figure 5 A working principle diagram of a vertical cavity semiconductor optical amplifier according to an embodiment of the present invention; Figure 6 is a flow chart of a method for using a vertical cavity semiconductor optical amplifier according to an embodiment of the present invention; In the accompanying drawings: 1. N-side insulating layer; 2. substrate; 3. active area; 4. P-side insulating layer; 5. P-side window; 6. N-side anode; 7. N-side cathode; 8. N-side discharge cavity; 9. P-side anode; 10. P-side cathode; 11. P-side discharge cavity; 12. N-type DBR; 13. P-type DBR; 14. leakage hole; 15. P-side discharge power supply; 16. N-side discharge power supply; 17. driving power supply; 18. N-side window. DETAILED DESCRIPTION

[0015] In order to enable those skilled in the art to better understand the technical solution of the present invention, the technical solution of the present invention is clearly and completely described below in conjunction with the accompanying drawings of the present invention. Based on the embodiments in this application, other similar embodiments obtained by ordinary technicians in this field without making creative work should all fall within the scope of protection of this application. In addition, the directional words mentioned in the following embodiments, such as "up", "down", "left", "right", etc., are only reference to the directions of the accompanying drawings. Therefore, the directional words used are used to illustrate rather than limit the invention.

[0016] According to an embodiment of the present invention, a vertical cavity semiconductor optical amplifier is provided. Figures 1 to 5 , comprising an N-side electrode, an N-side insulating layer 1, a substrate 2, an active area 3, a P-side insulating layer 4 and a P-side electrode in sequence, wherein the N-side electrode and the P-side electrode both comprise a cathode, an anode and a discharge cavity, wherein cathode discharge breaks down the discharge gas in the discharge cavity to generate a low-temperature plasma electrode, and a plurality of leakage holes 14 are evenly distributed on the N-side insulating layer 1 and the P-side insulating layer 4, wherein the cathode and the anode are electrically connected to a discharge power supply respectively, and the N-side electrode and the P-side electrode are electrically connected to a driving power supply 17 respectively.

[0017] It should be noted that by setting the N-side discharge cavity 8 and the P-side discharge cavity 11, discharge between the anode and the cathode is achieved to produce a full-aperture plasma electrode; by setting the leakage hole 14, the uniformity of the loop current injected into the active area 3 is achieved; the plasma electrode can be diffused to any caliber, therefore, a large caliber can be achieved, and the quality of the output beam can be guaranteed while improving the output power.

[0018] Specifically, when the vertical cavity semiconductor optical amplifier only includes an N-side electrode, an N-side insulating layer 1, a substrate 2, an active region 3, a P-side insulating layer 4 and a P-side electrode, the amplifier is a transmission-type traveling wave amplifier.

[0019] In the vertical cavity semiconductor optical amplifier of this embodiment, please refer to Figures 1 to 5 A window is provided on the side of the plasma electrode away from the substrate 2 .

[0020] It should be noted that an N-side window 18 is provided on the side of the N-side electrode away from the substrate 2 , and a P-side window 5 is provided on the side of the P-side electrode away from the substrate 2 .

[0021] In the vertical cavity semiconductor optical amplifier of this embodiment, please refer to Figures 1 to 5 The discharge cavity is formed between the N-side window 18 and the N-side insulating layer 1, and between the P-side window 5 and the P-side insulating layer 4. The cathode and the anode are both located inside the discharge cavity, and the discharge cavity is filled with a discharge gas.

[0022] It should be noted that the N-side electrode includes an N-side anode 6, an N-side cathode 7 and an N-side discharge cavity 8, and the N-side window 18, the N-side anode 6, the N-side cathode 7 and the N-side insulating layer 1 together form a cavity filled with a discharge gas at a certain pressure, and the N-side anode 6 and the N-side cathode 7 are respectively electrically connected to the N-side discharge power supply 16. At the same time, the length of the N-side anode 6 and the length of the N-side cathode 7 are both shorter than the length of the N-side insulating layer 1 to prevent leakage; the P-side electrode includes a P-side anode 9, a P-side cathode 10 and a P-side discharge cavity 11, and the P-side window 5, the P-side anode 9, the P-side cathode 10 and the P-side insulating layer 4 together form a cavity filled with a discharge gas at a certain pressure, and the P-side anode 9 and the P-side cathode 10 are respectively electrically connected to the P-side discharge power supply 15. At the same time, the length of the P-side anode 9 and the length of the P-side cathode 10 are both shorter than the length of the P-side insulating layer 4 to prevent leakage.

[0023] In the vertical cavity semiconductor optical amplifier of this embodiment, please refer to Figures 1 to 5 The side surfaces of the cathode and the anode adjacent to each other are both configured to be serrated.

[0024] It should be noted that the serration can enhance the electric field near the cathode and the anode, making it easier for the discharge gas to be broken down.

[0025] In the vertical cavity semiconductor optical amplifier of this embodiment, please refer to Figures 1 to 5 The active region 3 is a quantum dot active region or a quantum well active region. Specifically, the active region 3 is a periodic multiple quantum well structure of InGaAs / GaAsP, GaAs / AlGaAs, InGaAs / GaAs or AlGaN / InGaN.

[0026] In the vertical cavity semiconductor optical amplifier of this embodiment, please refer to Figures 1 to 5 , the substrate 2 is a GaAs or GaN substrate.

[0027] In the vertical cavity semiconductor optical amplifier of this embodiment, please refer to Figures 1 to 5 An N-type DBR 12 is provided between the substrate 2 and the active area 3, and a P-type DBR 13 is provided between the P-side insulating layer 4 and the active area 3. The amplifier is a transmission regenerative amplifier.

[0028] It should be noted that, compared with the transmission type traveling wave amplifier, the transmission type regenerative amplifier only adds the N-type DBR 12 and the P-type DBR 13, and the rest of the structure is exactly the same.

[0029] In the vertical cavity semiconductor optical amplifier of this embodiment, please refer to Figures 1 to 5 The distribution shape of the plurality of leakage holes 14 is the same as the spot shape of the seed light.

[0030] It should be noted that by adjusting the distribution of the leakage holes 14, the distribution of the current injected into the active area 3 can be regulated, thereby controlling the excitation range of the active area 3 to match the spot distribution of the seed light, such as the leakage holes 14 are distributed in a square area to match the incident square seed light, the leakage holes 14 are distributed in a circular area to match the incident circular seed light, and other arbitrary shapes.

[0031] According to an embodiment of the present invention, a method for using a vertical cavity semiconductor optical amplifier is provided. Figures 1 to 6 ,include: S100, the discharge power source is powered on, a strong electric field is generated near the cathode, and the electrons in the cathode material are ejected from the material surface and accelerated under the action of the strong electric field. When the electrons move toward the anode, they collide with the molecules / atoms of the discharge gas, causing an avalanche effect, generating a large number of ions and electrons. When passing through the leakage hole 14, a very small number of electrons are injected into the active area 3 through the leakage hole 14, and the vast majority of electrons continue to move toward the anode, forming a full-caliber plasma electrode; S200, the driving power source 17 is powered on, and the electrons in the N-side discharge cavity enter the substrate 2 through the leakage holes on the N-side insulating layer 1, flow through the active area 3, and enter the P-side discharge cavity through the leakage holes on the P-side insulating layer 4, forming a loop current; S300, when the seed light passes through the vertical cavity semiconductor optical amplifier, the active region 3 generates stimulated radiation under the action of the seed light, and the seed light is output after gain. It should be noted that when the plasma encounters the leakage hole 14 during diffusion, because the leakage hole 14 is very small, only a small part of the electrons pass through the leakage hole 14, so it does not affect the diffusion of the low-temperature plasma, and finally forms a full-caliber plasma electrode. The transmittance of the low-temperature plasma to the seed light is close to 100%, and it has a high damage threshold and can withstand high-power and high-energy laser output. The leakage holes 14 are evenly distributed, so the injection current in the active area 3 is evenly distributed, there is no current crowding effect, and a higher quality laser beam can be output.

[0032] Specifically, in step S300, an N-type DBR12 is provided between the substrate 2 and the active area 3, a P-type DBR13 is provided between the P-side insulating layer 4 and the active area 3, and the seed light is output after multiple reflection gains of the two layers of reflectors, the P-type DBR13 and the N-type DBR12.

[0033] It should be noted that the reflectivity of the P-type DBR13 and the N-type DBR12 is relatively low and is not enough to produce lasing; when the seed light passes through the transmission-type traveling wave amplifier, it is directly output after being amplified by stimulated radiation once; when the seed light passes through the transmission-type regenerative amplifier, the active area 3 undergoes stimulated radiation under the action of the seed light, and is output after multiple reflection gains through the two layers of reflectors of the P-type DBR13 and the N-type DBR12.

[0034] The present invention has been described in detail above. The above description is only a preferred embodiment of the present invention and should not limit the scope of implementation of the present invention. That is, all equivalent changes and modifications made within the scope of this application should still fall within the scope of the present invention.

Claims

1. A vertical cavity semiconductor optical amplifier and a method of using the same, characterized in that: The invention comprises an N-side electrode, an N-side insulating layer, a substrate, an active area, a P-side insulating layer and a P-side electrode in sequence. The N-side electrode and the P-side electrode both comprise a cathode, an anode and a discharge cavity. The cathode discharge breaks down the discharge gas in the discharge cavity to generate a low-temperature plasma electrode. The N-side insulating layer and the P-side insulating layer are both provided with a plurality of leakage holes. The cathode and the anode are respectively electrically connected to a discharge power supply, and the N-side electrode and the P-side electrode are respectively electrically connected to a driving power supply.

2. A vertical cavity semiconductor optical amplifier and a method for using the same according to claim 1, characterized in that: A window is arranged on a side of the plasma electrode away from the substrate.

3. A vertical cavity semiconductor optical amplifier and a method for using the same according to claim 2, characterized in that: The discharge cavity is formed between the N-side window and the N-side insulating layer, and between the P-side window and the P-side insulating layer. The cathode and the anode are both located inside the discharge cavity, and the discharge cavity is filled with a discharge gas.

4. A vertical cavity semiconductor optical amplifier and a method of using the same according to any one of claims 1 to 3, characterized in that: The side surfaces of the cathode and the anode adjacent to each other are both configured to be sawtooth-shaped.

5. A vertical cavity semiconductor optical amplifier and a method for using the same according to claim 1, characterized in that: The active region is a quantum dot active region or a quantum well active region.

6. A vertical cavity semiconductor optical amplifier and a method of using the same according to claim 1, characterized in that: The substrate is a GaAs or GaN substrate.

7. A vertical cavity semiconductor optical amplifier and a method for using the same according to claim 1, characterized in that: An N-type DBR is arranged between the substrate and the active area, and a P-type DBR is arranged between the P-side insulating layer and the active area.

8. A vertical cavity semiconductor optical amplifier and a method for using the same according to claim 1, characterized in that: The distribution shape of the leakage holes is the same as the spot shape of the seed light.

9. A method for using a vertical cavity semiconductor optical amplifier according to any one of claims 1 to 8, characterized in that: The following steps are involved: S100, the discharge power supply is powered on, a strong electric field is generated near the cathode, and the electrons in the cathode material are ejected from the material surface and accelerated under the action of the strong electric field. When the electrons move toward the anode, they collide with the molecules / atoms of the discharge gas, causing an avalanche effect, generating a large number of ions and electrons. When passing through the leakage hole, a very small number of electrons are injected into the active area through the leakage hole, and the vast majority of electrons continue to move toward the anode, forming a full-caliber plasma electrode; S200, the driving power supply is powered on, and the electrons in the N-side discharge cavity enter the substrate through the leakage holes on the N-side insulating layer, flow through the active area, and enter the P-side discharge cavity through the leakage holes on the P-side insulating layer, forming a loop current; S300, when the seed light passes through the vertical cavity semiconductor optical amplifier, the active region generates stimulated radiation under the action of the seed light, and the seed light is output after gain.

10. The method for using a vertical cavity semiconductor optical amplifier according to claim 9, characterized in that: In step S300, an N-type DBR is arranged between the substrate and the active area, a P-type DBR is arranged between the P-side insulating layer and the active area, and the seed light is output after multiple reflections and amplification of the two layers of reflectors, the P-type DBR and the N-type DBR.

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