Manufacturing method, process module matching method, and substrate processing apparatus

Abstract

The invention discloses a manufacturing method, a process module matching method and a substrate processing device. The manufacturing method includes: a device setting operation of matching resonance points of a first process module and a second process module different from the first process module to each other; a first substrate processing operation of processing the substrate in the first process module and / or the second process module; and a resonance frequency control operation of adjusting a resonance point of the first process module and the second process module, which is changed in a case where the first substrate processing operation is performed, to an initial resonance point, the resonant frequency control operation includes controlling at least one of a variable element of a first resonant control circuit of the first process module and a variable element of a second resonant control circuit of the second process module to adjust a resonance point of the first process module and the second process module to an initial resonance point.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority and benefits of Korean Patent Application No. 10 - 2023 - 0186977, filed with the Korean Intellectual Property Office on December 20, 2023, the entire content of which is incorporated herein by reference. Technical Field

[0003] The present invention relates to a manufacturing method, a process module matching method, and a substrate processing apparatus, and more particularly to a manufacturing method for manufacturing semiconductor devices, a method for matching process modules for processing a substrate using plasma for manufacturing semiconductor devices, and a substrate processing apparatus. Background Art

[0004] To manufacture semiconductor devices, various processes such as photolithography, deposition, etching, and ion implantation are performed on a substrate (such as a wafer). Among these processes, both the deposition process and the etching process use plasma to process the substrate. In the deposition process, plasma is used to form a film on the substrate. In the etching process, plasma is used to remove the film formed on the substrate.

[0005] On the other hand, processing a substrate using plasma requires a certain amount of time. Thus, a substrate processing apparatus (a semiconductor manufacturing facility) includes a plurality of process modules. Each process module processes the substrate. The substrate processing apparatus includes a plurality of process modules so that the number of substrates that the substrate processing apparatus can process per unit time increases.

[0006] Generally, the process modules provided in a single substrate processing apparatus can perform the same type of process. That is, the process modules can be operated with the same process recipe. Preferably, the degree of processing of the substrates processed by the process modules operated with the same process recipe is the same. For example, the etching rate of the substrates processed in the process modules performing the same etching process with the same process recipe is preferably the same.

[0007] However, the degree of processing of the substrates processed in each of the process modules may vary. Due to a matching error in the configuration of the process modules, the impedance across the process modules from the RF (radio frequency) power source may vary. In addition, since the number of driving times of the process modules is different from each other, the degree of deformation of the configuration of the process modules may be different.

[0008] Therefore, in order to ensure that the degree of substrate processing between process modules is the same, tool-to-tool matching (TTTM) is required. SUMMARY OF THE INVENTION

[0009] The present invention is directed to providing a manufacturing method, a process module matching method, and a substrate processing apparatus capable of effectively processing a substrate.

[0010] The present invention is also directed to providing a manufacturing method, a process module matching method, and a substrate processing apparatus capable of making the degree of processing between substrates substantially the same.

[0011] The present invention is also directed to providing a manufacturing method, a process module matching method, and a substrate processing apparatus capable of adjusting the resonance point of a process module.

[0012] The present invention is also directed to providing a manufacturing method, a process module matching method, and a substrate processing apparatus capable of matching the resonance points between process modules.

[0013] The problems to be solved by the present invention are not limited to the above problems, and those skilled in the art will clearly understand the problems not mentioned from the following description.

[0014] An exemplary embodiment of the present invention provides a manufacturing method, the manufacturing method including: an equipment setting operation that matches the resonance points of a first process module and a second process module different from the first process module; a first substrate processing operation that processes a substrate in the first process module and / or the second process module; and a resonance frequency control operation that adjusts the resonance points of the first process module and the second process module changed in the case of performing the first substrate processing operation to an initial resonance point, wherein the resonance frequency control operation includes controlling at least one of a variable element of a first resonance control circuit of the first process module and a variable element of a second resonance control circuit of the second process module to adjust the resonance points of the first process module and the second process module to the initial resonance point.

[0015] According to an exemplary embodiment, the first process module may include: a first chamber; a first power supply, which is an RF power supply for generating plasma or adjusting the flow of plasma in the first chamber; a first cable, which is coupled to the RF signal applied by the first power supply; and a first impedance controller, which is coupled to the first cable, and the second process module may include: a second chamber; a second power supply, which is an RF power supply for generating plasma or adjusting the flow of plasma in the second chamber; a second cable, which is coupled to the RF signal applied by the second power supply; and a second impedance controller, which is connected to the second cable.

[0016] According to an exemplary embodiment, the device setup operation may include adjusting the length of at least one of the first cable and the second cable.

[0017] According to an exemplary embodiment, the device setup operation may include controlling at least one of the variable elements of the first resonance control circuit and the second resonance control circuit to match the resonance points of the first process module and the second process module with each other.

[0018] According to an exemplary embodiment, the manufacturing method may further include: a second substrate processing operation, which is performed after the resonance frequency control operation, in which the first process module and / or the second process module processes the substrate.

[0019] According to an exemplary embodiment, when a set number or more of substrates have been processed in the first substrate processing operation, the resonance frequency control operation may be performed.

[0020] According to an exemplary embodiment, when a set time period has elapsed since the first substrate processing operation was performed, the resonance frequency control operation may be performed.

[0021] Another exemplary embodiment of the present invention provides a process module matching method, which matches the resonance points of multiple process modules, wherein each of the multiple process modules includes a chamber, a controller, and a cable connecting the controller and the chamber, and the resonance points of the multiple process modules are matched by differentiating the lengths of the cables of the multiple process modules.

[0022] According to an exemplary embodiment, each of the cables may be provided with a resonance control circuit including at least one variable element, and the multiple process modules may adjust the variable elements of the resonance control circuit after processing a set number of substrates.

[0023] According to an exemplary embodiment, the resonance points of the process modules may be matched by adjusting the variable element.

[0024] According to an exemplary embodiment, the resonance point of the process module can be matched to the initial resonance point by adjusting a variable element.

[0025] Another exemplary embodiment of the present invention provides an apparatus for processing a substrate, the apparatus including: a first process module configured to process a substrate by using plasma, wherein the first process module includes: a first chamber providing an internal space in which the substrate is processed by using plasma; a first edge impedance controller included in the first process module and RF-coupled to a first ring electrode positioned on a lower side of an edge region of the substrate processed in the first process module to control plasma flow in the edge region of the substrate; a first cable having one end and the other end respectively connected to the first chamber and the first edge impedance controller; and a first resonance control circuit provided in the first cable to control a resonance point changed by deformation of the first cable.

[0026] According to an exemplary embodiment, the first resonance control circuit may include at least one variable element.

[0027] According to an exemplary embodiment, the apparatus may further include: a controller configured to control the first resonance control circuit, wherein after the first process module processes a set number of substrates, the controller controls at least one of the variable elements of the first resonance control circuit to adjust the resonance point of the first process module to the initial resonance point.

[0028] According to an exemplary embodiment, the apparatus may further include: a second process module configured to process a substrate by using plasma, wherein the second process module may include: a second chamber providing an internal space in which the substrate is processed by using plasma; a second edge impedance controller included in the second process module and RF-coupled to a second ring electrode positioned on a lower side of an edge region of the substrate processed in the second process module to control plasma flow in the edge region of the substrate; a second cable having one end and the other end respectively connected to the second chamber and the second edge impedance controller; and a second resonance control circuit provided in the second cable to control a resonance point changed by deformation of the second cable.

[0029] According to an exemplary embodiment, the apparatus may further include: a controller configured to control a first resonance control circuit and a second resonance control circuit, wherein the controller may control at least one of variable elements included in the first resonance control circuit and the second resonance control circuit to match the resonance point of the first process module with the resonance point of the second process module.

[0030] According to an exemplary embodiment, the first cable and the second cable may have different lengths.

[0031] According to an exemplary embodiment, the apparatus may further include: a controller configured to control a first resonance control circuit and a second resonance control circuit, wherein after processing a set number of substrates in the first process module and the second process module, or after a set period of time has elapsed after processing a set number of substrates in the first process module and the second process module, the controller may adjust the resonance point of the first process module and the resonance point of the second process module to an initial resonance point by controlling at least one of variable elements included in the first resonance control circuit and the second resonance control circuit.

[0032] According to an exemplary embodiment, the first resonance control circuit may include: a plurality of variable capacitors connected in parallel; and an inductor connected in series with the plurality of variable capacitors.

[0033] According to an exemplary embodiment, the first resonance control circuit may include a sensor positioned between the inductor and the first edge impedance controller, and the sensor may be a sensor capable of measuring current and / or voltage.

[0034] According to an exemplary embodiment of the present invention, substrates can be effectively processed.

[0035] Furthermore, according to an exemplary embodiment of the present invention, the degree of processing between substrates can be substantially the same.

[0036] Furthermore, according to an exemplary embodiment of the present invention, the resonance point of a process module can be adjusted.

[0037] Furthermore, according to an exemplary embodiment of the present invention, the resonance points between process modules can be matched.

[0038] The effects of the present invention are not limited to the above effects, and those skilled in the art will clearly understand the effects not mentioned from the description and the drawings. Description of the Drawings

[0039] Figure 1 A top plan view for showing a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0040] Figure 2 A schematic diagram showing a process module provided by a substrate processing apparatus for Figure 1 .

[0041] Figure 3 A schematic diagram showing a matching method for a process module according to an exemplary embodiment of the present invention.

[0042] Figure 4 A graph showing the change in resonance points when the cable connecting the edge impedance controller and the chamber is changed.

[0043] Figure 5 A flowchart showing a substrate processing method according to an exemplary embodiment of the present invention.

[0044] Figure 6 A flowchart showing a method for matching a process module according to another exemplary embodiment of the present invention.

[0045] After being described in detail in conjunction with the accompanying drawings, the various features and advantages of the non-limiting exemplary embodiments of this specification can be made clearer. The accompanying drawings are for reference only and should not be construed as limiting the scope of the claims. Unless otherwise specified, the drawings should not be considered to be drawn to scale. For clarity, various dimensions in the figures may be exaggerated. Detailed Description of Specific Embodiments

[0046] Example embodiments will now be described more fully with reference to the accompanying drawings. The example embodiments are provided so that this disclosure will be thorough and will fully convey the scope to those skilled in the art. Numerous specific details (such as examples of specific components, devices, and methods) are set forth to provide a thorough understanding of the embodiments of this disclosure. It will be apparent to those skilled in the art that the example embodiments may be embodied in many different forms and that specific details should not be construed as limiting the scope of this disclosure. In some example embodiments, well-known processes, well-known device structures, and well-known technologies are not described in detail.

[0047] The terms used herein are for the purpose of describing particular example embodiments only and are not intended to be limiting. Unless the context clearly dictates otherwise, the singular forms "a", "an" and "the" may be intended to include the plural forms. The terms "comprises", "comprising", "including" and "having" are inclusive and thus specify the presence of the stated feature, integer, step, operation, element and / or component, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or combinations thereof. Unless explicitly identified as the order of execution, the method steps, processes and operations described herein should not be construed as necessarily being performed in the particular order discussed or illustrated. It should also be understood that additional or alternative steps may be employed.

[0048] When an element or layer is referred to as "on another element or layer", "bonded to another element or layer", "connected to another element or layer" or "coupled to another element or layer", the element or layer can be directly on, bonded directly to, connected directly to or coupled directly to the other element or layer, or there may be intervening elements or layers. In contrast, when an element is referred to as "directly on another element or layer", "directly bonded to another element or layer", "directly connected to another element or layer" or "directly coupled to another element or layer", there may be no intervening elements or layers. Other words used to describe the relationship between elements should be interpreted in a like manner (e.g., "between" relative to "directly between", "adjacent" relative to "directly adjacent", etc.). As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0049] Although the terms "first", "second", "third", etc. may be used herein to describe different elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections are not limited by these terms unless otherwise stated. These terms may be used only to distinguish one element, component, region, layer and / or section from another. When used herein, terms such as "first", "second" and other numerical terms do not imply an order or sequence unless the context clearly indicates otherwise. Thus, without departing from the teachings of the example embodiments, the first element, first component, first region, first layer or first section discussed below may be referred to as the second element, second component, second region, second layer or second section.

[0050] For ease of description, spatial relative terms, such as "inner", "outer", "beneath", "below", "lower", "above", "upper", etc., may be used herein to describe the relationship of one element or feature shown in the drawings to another (other) element or feature. The spatial relative terms are intended to cover different orientations of the device in use or operation in addition to the orientation depicted in the drawings. For example, if the device in the figures is flipped, an element described as "below" or "beneath" another element or feature will then be oriented "above" the other element or feature. Thus, the exemplary term "below" can encompass both an orientation above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatial relative descriptors used herein are interpreted accordingly.

[0051] When the terms "same" or "identical" are used in the description of the exemplary embodiments, it should be understood that there may be some imprecision. Thus, when an element or value is referred to as being the same as another element or value, it should be understood that the element or value is the same as other elements or values within the manufacturing or operating tolerances (e.g., ±10%).

[0052] When the terms "about" or "substantially" are used in conjunction with a numerical value, it should be understood that the associated numerical value includes the manufacturing or operating tolerances around the stated value (e.g., ±10%). Further, when the words "generally" and "substantially" are used in reference to a geometry, it should be understood that exactness of the geometry is not required, but the latitude of the shape is within the scope of the present disclosure.

[0053] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments belong. It should be further understood that terms, including those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0054] Figure 1 A top plan view for showing a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0055] Referring to Figure 1, the substrate processing apparatus 1 according to an exemplary embodiment of the present invention can process a substrate W (such as a wafer). The substrate processing apparatus 1 can process the substrate W by using plasma. The substrate processing apparatus 1 can perform an etching process of removing a film on the substrate W by using plasma, or a deposition process of forming a film on the substrate W by using plasma. Hereinafter, the present invention will be described by taking the case where the substrate processing apparatus 1 performs an etching process to remove the film on the substrate W as an example.

[0056] In addition, the substrate processing apparatus 1 can perform a process for manufacturing a semiconductor device. The substrate processing apparatus 1 can be a semiconductor manufacturing facility that performs some of various processes required for manufacturing a semiconductor device. The substrate processing method described hereinafter can be a manufacturing method for manufacturing a semiconductor device.

[0057] The substrate processing apparatus 1 according to an exemplary embodiment of the present invention can include a load port 10, an interface module 20, a load lock chamber 30, a transfer module 40, and a process module 50.

[0058] In the load port 10, a container in which a plurality of substrates W are accommodated can be placed. The container can be a container such as a FOUP (Front Opening Unified Pod), a wafer cassette, or a POD. The container can be transferred to the load port 10 by an Overhead Transport Apparatus (OHT) or an AutoVehicle Robot (AVR).

[0059] The unprocessed substrate W accommodated in the container placed in the load port 10 can be transferred to the load lock chamber 30 by a transfer robot provided in the interface module 20. In addition, the processed substrate W transferred to the load lock chamber 30 can be transferred to the container placed in the load port 10 by a transfer robot provided in the interface module 20. The pressure in the internal space of the interface module 20 can be maintained at normal pressure.

[0060] The load lock chamber 30 can be positioned between the interface module 20 and the transfer module 40. The load lock chamber 30 can include a first load lock chamber 31 and a second load lock chamber 32. The first load lock chamber 31 can provide a path for transferring the unprocessed substrate W to the process module 50, and the second load lock chamber 32 can provide a path for transferring the substrate W processed in the process module 50 to the container placed in the load port 10.

[0061] The pressure in the load lock chamber 30 can be switched between atmospheric pressure and vacuum pressure. For example, when the transfer robot of the interface module 20 loads the substrate W unloaded from the container into the first load lock chamber 31, the pressure in the first load lock chamber 31 can be switched from atmospheric pressure to vacuum pressure. Further, when loading the substrate W processed in the process module 50 into the second load lock chamber 32, the pressure in the second load lock chamber 32 can be switched from vacuum pressure to atmospheric pressure. In other words, as will be described later, the load lock chamber 30 functions as a pressure switching gate between the interface module 20 maintained at atmospheric pressure and the transfer module 40 maintained at vacuum pressure.

[0062] The transfer module 40 can be provided with a transfer robot. The internal space of the transfer module 40 can be maintained at vacuum pressure. The vacuum pressure in the internal space of the transfer module 40 does not mean a complete vacuum pressure (ideal vacuum pressure), but can mean a vacuum pressure equal to or greater than the vacuum pressure maintained for processing the substrate W in the process module 50. The transfer robot provided in the transfer module 40 can be configured to transfer the substrate W between the load lock chamber 30 and the process module 50.

[0063] The process module 50 can process the substrate W. The process module 50 can be a module that performs a processing operation on the substrate W. The process module 50 can be coupled to the transfer module 40. The process module 50 can have a plurality of process modules. For example, the substrate processing apparatus 1 can include a first process module 50A, a second process module 50B, a third process module 50C, and a fourth process module 50D. The first process module 50A, the second process module 50B, the third process module 50C, and the fourth process module 50D can perform the same process. The first process module 50A, the second process module 50B, the third process module 50C, and the fourth process module 50D can be operated with the same process recipe.

[0064] The first process module 50A, the second process module 50B, the third process module 50C, and the fourth process module 50D can have the same structure. The specific structure of the process module 50 will be described later.

[0065] The controller 90 can control the substrate processing apparatus 1. The controller 90 can control the substrate processing apparatus 1 to execute a substrate processing method, which is a manufacturing method of a semiconductor device to be described later.

[0066] The controller 90 can control the configuration of the substrate processing apparatus 1. The controller 90 may include: a process controller made of a microprocessor (computer) that executes the control of the substrate processing apparatus 1; a user interface made of a keyboard through which an operator performs command input operations, etc. to manage the substrate processing apparatus 1; a display for visualizing and displaying the operating status, etc. of the substrate processing apparatus 1; and a storage unit that stores a control program for executing a process performed in the substrate processing apparatus 1 under the control of the process controller, or stores a program for executing a process in each component according to various data and processing conditions (i.e., a processing recipe). Further, the user interface and the storage unit may be connected to the process controller. The processing recipe may be stored in a storage medium in the storage unit, and the storage medium may be a hard disk, a portable disk (such as a CD-ROM or a DVD), or a semiconductor memory (such as a flash memory).

[0067] Figure 2 For showing the process modules provided by the Figure 1 substrate processing apparatus.

[0068] Referring to Figure 2 , the process module 50 may include a chamber 100, a support unit 200 (an example of a lower electrode unit), a gas supply unit 300, an upper electrode unit 400, a temperature control unit 500, a power supply RF, a ring unit 700, a utility box (UB), a cable IC, a resonance control circuit TC, and an edge impedance controller EC.

[0069] The chamber 100 may have an internal space 101. In the internal space 101, the substrate W can be processed. In the internal space 101, the substrate W can be processed by plasma. The substrate W can be etched by plasma. The plasma can be transported to the substrate W and can etch the film formed on the substrate W.

[0070] The inner wall of the chamber 100 may be coated with a material having excellent plasma resistance. The chamber 100 may be grounded. The chamber 100 may be formed with an inlet opening (not shown) through which the substrate W can be loaded and unloaded. The inlet opening can be selectively opened or closed by a door (not shown). In the case of processing the substrate W, the internal space 101 can be closed through the inlet opening. Further, in the case of processing the substrate W, the internal space 101 can have a vacuum pressure atmosphere.

[0071] An exhaust hole 102 may be formed at the bottom of the chamber 100. Through the exhaust hole 102, the atmosphere in the internal space 101 can be exhausted. The exhaust hole 102 may be connected to an exhaust pipeline VL that provides pressure reduction to the internal space 101. Process gases, plasmas, process by-products, etc. supplied to the internal space 101 can be discharged to the outside of the substrate processing apparatus 1 through the exhaust hole 102 and the exhaust pipeline VL. In addition, the pressure in the internal space 101 can be adjusted by the pressure reduction provided by the exhaust pipeline VL. For example, the pressure in the internal space 101 can be adjusted by the pressure reduction provided by the gas supply unit 300 and the exhaust pipeline VL described later. When it is necessary to further reduce the pressure in the internal space 101, the pressure reduction provided by the exhaust pipeline VL can be increased, or the amount of process gas supplied by the gas supply unit 300 per unit time can be reduced. Conversely, when a higher pressure in the internal space 101 is desired, the pressure reduction provided by the exhaust pipeline VL can be reduced, or the amount of process gas supplied by the gas supply unit 300 per unit time can be increased.

[0072] The support unit 200 can support the substrate W. The support unit 200 can support the substrate W in the internal space 101. The support unit 200 can have either of the opposing electrodes that form an electric field in the internal space 101. Further, the support unit 200 can be an electrostatic chuck (ESC) that holds the substrate W by electrostatic adsorption.

[0073] The support unit 200 can include a dielectric plate 210, a capacitive electrode 220, a heater 230, a lower electrode 240, and an insulating plate 250.

[0074] The dielectric plate 210 can be disposed on the top of the support unit 200. The dielectric plate 210 can be provided with an insulating material. For example, the dielectric plate 210 can be provided by a material including ceramics or quartz. The dielectric plate 210 can have a seating surface for supporting the substrate W. When viewed from above, the dielectric plate 210 can have a seating surface with an area smaller than the bottom surface of the substrate W. The bottom surface of the edge region of the substrate W placed on the dielectric plate 210 can face the top surface of the edge ring 710 described later.

[0075] A first supply flow path 211 may be formed in the dielectric plate 210. The first supply flow path 211 may be formed to extend from the top surface of the dielectric plate 210 to the bottom surface of the dielectric plate 210. The first supply flow paths 211 are formed to be spaced apart from each other, and may be provided as channels through which a heat transfer medium is supplied to the underside of the substrate W. For example, the first supply flow path 211 may be in fluid communication with a first circulation flow path 241 and a second supply flow path 243, which will be described later.

[0076] In addition, the dielectric plate 210 may have a separate electrode (not shown) embedded in the dielectric plate 210 for adsorbing the substrate W onto the dielectric plate 210. A direct current may be applied to the electrode. Through the applied current, an electrostatic force acts between the electrode and the substrate, and the substrate W may be adsorbed to the dielectric plate 210 by the electrostatic force.

[0077] The electrostatic electrode 220 may generate an electrostatic force to hold the substrate W. The electrostatic electrode 220 may be disposed inside the dielectric plate 210. The electrostatic electrode 220 may be embedded within the dielectric plate 210. The electrostatic electrode 220 may be electrically connected to an electrostatic power supply 221. The electrostatic power supply 221 may selectively hold the substrate W by applying power to the electrostatic electrode 220.

[0078] The heater 230 is electrically connected to an external power supply (not shown). The heater 230 generates heat through a resisting current from the external power supply. The generated heat is transferred to the substrate W through the dielectric plate 210. Through the heat generated in the heater 230, the substrate W is maintained at a predetermined temperature. The heater 230 includes a spiral coil. The heater 230 may be embedded in the dielectric plate 210 at fixed intervals.

[0079] The lower electrode 240 is located at the bottom of the dielectric plate 210. The lower electrode 240 may be an electrode that forms an electric field in the internal space 101. The lower electrode 240 may be either of the opposing electrodes that form an electric field in the internal space 101. The lower electrode 240 may be provided to face the other of the opposing electrodes (the upper electrode 420, which will be described later). The electric field formed in the internal space 101 by the lower electrode 240 may excite a process gas supplied through the gas supply unit 300 to generate plasma. The lower electrode 240 may be disposed inside the dielectric plate 210.

[0080] The top surface of the lower electrode 240 may be stepped such that its central region is positioned higher than the edge region. The central region of the top surface of the lower electrode 240 has a region corresponding to the bottom surface of the dielectric plate 210 and is bonded to the bottom surface of the dielectric plate 210. The lower electrode 240 may be formed with a first circulation flow path 241, a second circulation flow path 242, and a second supply flow path 243.

[0081] The first circulation flow path 241 is provided as a passage in which a heat transfer medium circulates. The first circulation flow path 241 can be supplied with the heat transfer medium stored in the heat transfer medium storage unit GS via the medium supply pipeline GL. The medium supply pipeline GL can be equipped with a medium supply valve GB. By changing the opening / closing or the opening degree of the medium supply valve GB, the supply of the heat transfer medium to the first circulation flow path 241 or the supply flow rate per unit time of the heat transfer medium supplied to the first circulation flow path 241 can be adjusted. The heat transfer medium can include helium (He) gas.

[0082] The first circulation flow path 241 can be formed in a spiral shape within the lower electrode 240. In addition, the first circulation flow path 241 can be arranged such that annular-shaped flow paths having different radii have the same center. Each of the first circulation flow paths 241 can communicate with each other. The first circulation flow paths 241 are formed at the same height.

[0083] The second circulation flow path 242 is provided as a passage in which a cooling fluid circulates. The second circulation flow path 242 can be supplied with the cooling fluid stored in the cooling fluid storage unit CS via the fluid supply pipeline CL. The fluid supply pipeline CL can be equipped with a fluid supply valve CB. By changing the opening / closing or the opening degree of the fluid supply valve CB, the supply of the cooling fluid to the second circulation flow path 242 or the supply flow rate per unit time of the cooling fluid supplied to the second circulation flow path 242 can be adjusted. The cooling fluid can be a coolant or a cooling gas. The cooling fluid supplied to the second circulation flow path 242 can cool the lower electrode 240 to a predetermined temperature. The lower electrode 240 cooled to the predetermined temperature can maintain the temperature of the dielectric plate 210 and / or the substrate W at the predetermined temperature.

[0084] The second circulation flow path 242 can be formed in a spiral shape within the lower electrode 240. In addition, the second circulation flow path 242 can be arranged such that annular-shaped flow paths having different radii have the same center. Each of the second circulation flow paths 242 can communicate with each other. The second circulation flow path 242 can have a cross-sectional area larger than that of the first circulation flow path 241. The second circulation flow paths 242 are formed at the same height. The second circulation flow path 242 can be positioned below the first circulation flow path 241.

[0085] The second supply flow path 243 extends upward from the first circulation flow path 241 and is provided to the top surface of the lower electrode 240. The number of the second supply flow paths 243 can be set corresponding to the number of the first supply flow paths 211, and the first circulation flow path 241 and the first supply flow path 211 are fluidly connected to each other.

[0086] The insulating plate 250 is disposed below the lower electrode 240. The insulating plate 250 is provided with dimensions corresponding to the dimensions of the lower electrode 240. The insulating plate 250 is positioned between the lower electrode 240 and the bottom surface of the chamber 100. The insulating plate 250 can be provided by an insulating material and can electrically isolate the lower electrode 240 from the chamber 100.

[0087] The gas supply unit 300 supplies a process gas to the chamber 100. The gas supply unit 300 includes a gas storage unit 310, a gas supply line 320, and a gas inlet port 330. The gas supply line 320 connects the gas storage unit 310 and the gas inlet port 330 and supplies the process gas stored in the gas storage unit 310 to the gas inlet port 330. The gas inlet port 330 can be installed in a gas supply hole 422 formed in the upper electrode 420.

[0088] The upper electrode unit 400 can have an upper electrode 420 opposite to the lower electrode 240. Further, the upper electrode unit 400 can be connected to the above gas supply unit 300 to provide a part of a supply path for the process gas supplied by the gas supply unit 300. The upper electrode unit 400 can include a support 410, an upper electrode 420, and a distribution plate 430.

[0089] The support 410 can be coupled to the chamber 100. The support 410 can be a body for fastening the upper electrode 420 and the distribution plate 430 of the upper electrode unit 400. The support 410 can be a medium that allows the upper electrode 420 and the distribution plate 430 to be installed in the chamber 100.

[0090] The upper electrode 420 can be an electrode opposite to the lower electrode 240. The upper electrode 420 can be arranged to face the lower electrode 240. An electric field can be formed in the space between the upper electrode 420 and the lower electrode 240. The formed electric field can excite the process gas supplied to the internal space 101 to generate plasma. The upper electrode 420 can be arranged in a disk shape. The upper electrode 410 includes an upper plate 410a and a lower plate 420b. The upper electrode 420 can be grounded. However, the present invention is not limited thereto, and the upper electrode 420 can be connected to an RF power source (not shown) to apply an RF voltage.

[0091] The bottom surface of the upper plate 412a is stepped such that its central region is higher than the edge region. The gas supply hole 422 is formed in the central region of the upper plate 420a. The gas supply hole 422 is connected to the gas inflow port 330 and supplies process gas to the buffer space 424. The cooling flow path 421 is formed inside the upper plate 410a. The cooling flow path 421 may be formed in a spiral shape. In addition, the cooling flow path 421 may be configured such that annular-shaped flow paths having different radii have the same center. The cooling flow path 421 may be supplied with a cooling fluid through a temperature control unit 500 described later. The supplied cooling fluid may circulate along the cooling flow path 421 and may cool the upper plate 420a.

[0092] The lower plate 420b is positioned on the lower side of the upper plate 420a. The lower plate 420b is provided with dimensions corresponding to the dimensions of the upper plate 420a and is positioned facing the upper plate 420a. The top of the lower plate 420b is stepped such that its central region is lower than the edge region. The top surface of the lower plate 420b is combined with the bottom surface of the upper plate 420a to form the buffer space 424. The buffer space 424 is provided as a space where the gas supplied through the gas supply hole 422 temporarily stays before being supplied to the chamber 100. The gas supply hole 423 is formed in the central region of the lower plate 420b. A plurality of gas supply holes 423 are formed at predetermined intervals from each other. The gas supply hole 413 is connected to the buffer space 423.

[0093] The distribution plate 430 is located on the lower side of the lower plate 420b. The distribution plate 430 is provided in a disc shape. The distribution holes 431 are formed in the distribution plate 430. The distribution holes 431 are provided from the top surface to the bottom surface of the distribution plate 431. The distribution holes 431 are provided in a number corresponding to the number of the gas supply holes 423 and are located at positions corresponding to the gas supply holes 423. The process gas staying in the buffer space 424 is uniformly supplied to the chamber 100 through the gas supply holes 423 and the distribution holes 431.

[0094] The temperature control unit 500 may adjust the temperature of the upper electrode 420. The temperature control unit 500 may include a heating member 511, a heating power supply 513, a filter 515, a cooling fluid supply unit 521, a fluid supply passage 523, and a valve 525.

[0095] The heating member 511 can heat the lower plate 420b. The heating member 511 can be a heater. The heating member 511 can be a resistance heater. The heating member 511 can be embedded in the lower plate 420b. The heating power supply 513 can generate power to heat the heating member 511. The heating power supply 513 can heat the heating member 511 to heat the lower plate 420b. The heating power supply 513 can be a DC power supply. The filter 515 can prevent the radio frequency voltage (power) applied by the power supply unit 600 described later from being delivered to the heating power supply 513.

[0096] The cooling fluid supply unit 521 can store the cooling fluid for cooling the upper plate 520a. The cooling fluid supply unit 521 can supply the cooling fluid to the cooling flow path 421 via the fluid supply channel 523. The cooling fluid supplied to the cooling flow path 421 can flow along the cooling flow path 421 to lower the temperature of the upper plate 420a. In addition, the fluid valve 525 can be installed in the fluid supply channel 523 to control whether the cooling fluid supply unit supplies the cooling fluid or the amount of the cooling fluid supplied per unit time. The fluid valve 525 can be an on / off valve or can be a flow rate regulating valve.

[0097] The power supply RF can apply a radio frequency (RF) voltage to the lower electrode 240. The power supply RF can apply a radio frequency voltage to the lower electrode 240 to form an electric field in the internal space 101.

[0098] The ring unit 700 can be provided at the edge region of the support unit 200. The ring unit 700 can include an edge ring 710, an insulator 720, and a coupling ring 730.

[0099] The edge ring 710 can be provided below the edge region of the substrate W. At least a part of the edge ring 710 can be configured to be provided below the edge region of the substrate W. The edge ring 710 can have an overall annular shape. The edge ring 710 can be configured such that when viewed from the top, a part overlaps with the edge region of the substrate W and another part surrounds the outer periphery of the substrate W. The top surface of the edge ring 710 can include an inner top surface, an outer top surface, and an inclined top surface. The inner top surface can be the top surface adjacent to the central region of the substrate W. The outer top surface can be the top surface farther from the central region of the substrate W than the inner top surface. The inclined top surface can be the top surface provided between the inner top surface and the outer top surface. The inclined top surface can be an upwardly inclined top surface in the direction away from the center of the substrate W. The edge ring 710 can expand the electric field formation region such that the substrate W is positioned at the center of the region where plasma is formed. The edge ring 710 can be a focusing ring. The edge ring 710 can be provided by a material containing Si or SiC.

[0100] The insulator 720 can be configured to surround the edge ring 710 when viewed from the top. The insulator 720 can be provided by an insulating material. The insulator 720 can be set to contain an insulating material such as quartz or ceramic.

[0101] The coupling ring 730 can be disposed below the edge ring 710 and the insulator 720. The coupling ring 730 can be surrounded by the edge ring 710, the insulator 720, the lower electrode 240, and the dielectric plate 210. The coupling ring 730 can include a ring body 731 and a ring electrode E (an example of a conductive component). The ring body 731 can be provided by an insulating material. For example, the ring body 731 can be provided by an insulating material such as quartz or ceramic. The ring body 731 can be configured to surround the ring electrode E. The ring electrode E can be provided by a conductive material such as a material including metal.

[0102] The utility box UB can be provided with ports to which the cables IC can be connected. The cables IC can be electrically connected to the outer wall of the chamber 100 via the utility box UB. One end of the cable IC can be connected to the outer wall of the chamber 100 via the utility box UB, and the other end can be connected to the edge impedance controller EC. Further, the cable IC can be provided with a resonance control circuit TC.

[0103] When the power supply RF applies an RF voltage to the lower electrode 240, a plasma can be generated in the internal space 101. An RF electric field can be formed in the internal space 101 by the RF voltage applied by the power supply RF. The RF signal configuring the RF electric field can be coupled to the ring electrode E. The RF signal coupled to the ring electrode E can also be coupled to the cable IC connected to the chamber 100 via the utility box UB. This is because the chamber 100 is made of a conductive material.

[0104] The edge impedance controller EC can include circuit elements (such as resistors, capacitors, and inductors) as will be described later. The circuit elements (such as resistance, capacitance, and inductance) of the edge impedance controller EC can be set as variable elements or can be set as fixed elements. Depending on the circuit elements of the edge impedance controller EC, the impedance of the edge impedance controller EC may vary.

[0105] When the impedance of the edge impedance controller EC is smaller, the RF signal flowing into the cable IC is larger. As the RF signal flowing into the cable IC increases, the plasma concentration (plasma density) in the edge region of the substrate W decreases.

[0106] When the impedance of the edge impedance controller EC is larger, the RF signal flowing into the cable IC is smaller. As the RF signal flowing into the cable IC decreases, the plasma concentration in the edge region of the substrate W increases.

[0107] In other words, as the impedance of the edge impedance controller EC changes, the plasma concentration in the edge region of the substrate W may change. The user can change the impedance of the edge impedance controller EC by adjusting the resistance of circuit elements, the capacitance of capacitors, the inductance of inductors, etc., thereby adjusting the plasma concentration in the edge region of the substrate W.

[0108] Furthermore, the cable IC may be provided with a resonance control circuit TC. The resonance control circuit TC may be a circuit including capacitors, inductors, and sensors as will be described later. A plurality of capacitors may be provided. The capacitors may be variable capacitors. The plurality of capacitors may be connected in parallel. The parallel capacitors may be connected in series with an inductor. The sensor may be mounted at the rear end of the inductor. The sensor may be a current sensor capable of measuring the current flowing in the cable IC. Alternatively, the sensor may be a voltage sensor capable of measuring the voltage applied to the resonance control circuit TC. Optionally, the sensor may be a sensor including a voltmeter and an ammeter to measure both voltage and current.

[0109] The resonance control circuit TC can control the resonance point of the process module 50. Each of the process modules 50 may have a unique resonance point, which depends on the impedance across the process module 50 from the power supply RF. As the process module 50 operates multiple times, the configuration of the process module 50 may be deformed due to deterioration, etching, etc. In this case, the impedance across the process module 50 from the power supply RF may change. When the impedance across the process module 50 from the power supply RF changes, the resonance point of the process module 50 may also change.

[0110] The resonance control circuit TC can adjust the impedance across the process module 50 from the power supply RF. In other words, the resonance control circuit TC can control the resonance point (resonance frequency) of the process module 50 by adjusting the impedance across the process module 50 from the power supply RF.

[0111] Figure 2 The configuration of the process module 50 described in may be equally applicable to the first process module 50A, the second process module 50B, the third process module 50C, and the fourth process module 50D.

[0112] For example, the first process module 50A may include a first chamber 100A, a first power supply RFA, a first ring electrode EA, a first utility box UBA, a first lower electrode 240A, a first cable ICA, a first resonance control circuit TCA, and a first edge impedance controller ECA.

[0113] The second process module 50B may include a second chamber 100B, a second power supply RFB, a second ring electrode EB, a second utility box UBB, a second lower electrode 240B, a second cable ICB, a second resonance control circuit TCB, and a second edge impedance controller ECB.

[0114] The third process module 50C may include a third chamber 100C, a third power supply RFC, a third ring electrode EC, a third utility box UBC, a third lower electrode 240C, a third cable ICC, a third resonance control circuit TCC, and a third edge impedance controller ECC.

[0115] The fourth process module 50D may include a fourth chamber 100D, a fourth power supply RFD, a fourth ring electrode ED, a fourth utility box UBD, a fourth lower electrode 240D, a fourth cable ICD, a fourth resonance control circuit TCD, and a fourth edge impedance controller ECD.

[0116] The first chamber 100A to the fourth chamber 100D, the first power supply RFA to the fourth power supply RFD, the first ring electrode EA to the fourth ring electrode ED, the first utility box UBA to the fourth utility box UBD, the first lower electrode 240A to the fourth lower electrode 240D, the first cable ICA to the fourth cable ICD, the first resonance control circuit TCA to the fourth resonance control circuit TCD, and the first edge impedance controller ECA to the fourth edge impedance controller ECD may have substantially the same structure and function as the chamber 100, the power supply RF, the ring electrode E, the utility box UB, the lower electrode 240, the cable IC, the resonance control circuit TC, and the edge impedance controller EC described above.

[0117] Further, the first resonance control circuit TCA to the fourth resonance control circuit TCD may each include a first variable capacitor C1A and C2A, a second variable capacitor C1B and C2B, a third variable capacitor C1C and C2C, and a fourth variable capacitor C1D and C2D connected in parallel.

[0118] Further, the first resonance control circuit TCA to the fourth resonance control circuit TCD may include a first inductor LA, a second inductor LB, a third inductor LC, and a fourth inductor LD connected in series with the variable capacitors, respectively.

[0119] Further, the first resonance control circuit TCA to the fourth resonance control circuit TCD may include a first sensor SA, a second sensor SB, a third sensor SC, and a fourth sensor SD connected in series with the inductors, respectively.

[0120] Further, the first edge impedance controller ECA to the fourth edge impedance controller ECD may respectively include inductors LPA, LPB, LPC, and LPD, resistors RPA, RPB, RPC, and RPD, and capacitors CPA, CPB, CPC, and CPD.

[0121] Figure 3A schematic diagram for showing a matching method of process modules according to an exemplary embodiment of the present invention.

[0122] Referring to Figure 3 , a substrate processing apparatus 1 according to an exemplary embodiment of the present invention includes a plurality of process modules 50. Each of the plurality of process modules 50 has a chamber 100, a power supply RF, a ring electrode E, a utility box UB, a lower electrode 240, a cable IC, a resonance control circuit TC, and an edge impedance controller EC.

[0123] In this case, the impedance from the power supply RF across the chamber 100 between the process modules 50 is the same. This is because when each of the process modules 50 is set to the same process scheme, the impedance from the power supply RF across the chamber 100 between the process modules 50 should be the same, so that the processing rate for processing the substrate W in each of the process modules 50 is the same. However, even when the structures of the process modules 50 are manufactured with the same specifications, due to manufacturing tolerances of the structures and matching errors between the structures, etc., the impedance of the power supply RF across the chamber 100 between the process modules 50 may be slightly different.

[0124] Figure 4 A graph for showing the change of the resonance point when the cable connecting the edge impedance controller and the chamber is changed.

[0125] Figure 4 Shows the experimental data of the frequency when the reflection coefficient is the lowest when the cable IC provided between the edge impedance controller EC and the chamber 100 is changed, and more specifically when the length of the cable IC is changed. Referring to Figure 4 It can be seen that when the length of the cable IC is changed (i.e., the impedance of the cable IC is changed), the resonance frequency will change.

[0126] As the length of the cable IC changes, the impedance of the cable IC itself also changes. By changing the length of the cable IC installed between the edge impedance controller EC and the chamber 100, the magnitude of the impedance from the power supply RF across the chamber 100 may also change, and the resonance point of the process module 50 may also change.

[0127] Figure 5 A flowchart for showing a substrate processing method according to an exemplary embodiment of the present invention.

[0128] Referring to Figure 3 and Figure 5 , a substrate processing method as a method of manufacturing a semiconductor device according to an exemplary embodiment of the present invention may include an equipment setting operation S10, a first substrate processing operation S20, a resonance frequency control operation S30, and a second substrate processing operation S40.

[0129] The equipment setting operation S10 may include matching the resonance points of the process modules 50 with each other. Matching the resonance points of the process modules 50 with each other may mean matching the impedance of each process module 50 from the RF power source across the chamber 100. The equipment setting operation S10 may substantially involve changing the length of the cable IC to match any slight differences in resonance points that may occur between the process modules 50.

[0130] For example, the resonance points between the first process module 50A and the second process module 50B can be matched by installing a first cable ICA with a first length in the first process module 50A and a second cable ICB with a second length different from the first length in the second process module 50B.

[0131] In some cases, in addition to changing the length of the cable IC, the equipment setting operation S10 may include matching the resonance points between the process modules 50 by replacing elements in the resonance control circuit TC of the process module 50 or controlling variable elements in the resonance control circuit TC.

[0132] For example, the resonance points between the first process module 50A and the second process module 50B can be made to match each other by replacing the first inductor LA of the first resonance control circuit TCA with a first inductor LA including a different inductance or adjusting the capacitance of the first variable capacitors C1A and C2A, and replacing the second inductor LB of the second resonance control circuit TCB with a second inductor LB including a different inductance or adjusting the capacitance of the second variable capacitors C1B and C2B.

[0133] It can be determined whether the resonance points between the process modules 50 match each other by applying a voltage from the power supply RF to the lower electrode 240 and measuring the magnitudes of the currents flowing through the sensors SA, SB, SC, and SD of the resonance control circuit TC.

[0134] When the equipment setting operation S10 ends, the first substrate processing operation S20 is performed. In the first substrate processing operation S20, each of the process modules 50 performs a processing process on the substrate W. The first substrate processing operation S20 can be performed until each process module 50 has processed a set number of substrates W. Alternatively, the first substrate processing operation S20 can be performed within a set time period after the start of the first substrate processing operation S20.

[0135] After the first substrate processing operation S20 is performed, the process module 50 may be deformed. For example, the inner wall of the chamber 100 may be etched or deformed due to the deterioration of the cable IC. The deformation of the process module 50 may cause the process module 50 to have different resonance points.

[0136] Therefore, after processing a set number of substrates W in the first substrate processing operation S20, or after a set period of time has elapsed since the start of the first substrate processing operation S20, the resonance frequency control operation S30 is performed.

[0137] The resonance frequency control operation S30 can be performed by controlling the variable element of the resonance control circuit TC through a control signal generated by the controller 90. Different from the equipment setting operation S10, the resonance frequency control operation S30 can be automatically performed through the control signal generated by the controller 90 without the participation of the operator.

[0138] In the resonance frequency control operation S30, the impedance of the variable element can be changed by a preset value in the controller 90. For example, the resonance frequency control operation S30 can include changing the capacitance value of the variable capacitor of the control circuit TC by a preset value in the controller 90.

[0139] Conversely, in the resonance frequency control operation S30, the power supply RF applies a voltage to the lower electrode 240, the sensor in the resonance control circuit TC measures the current, and the impedance of the variable element of the resonance control circuit TC can change until the current measured by the sensor is equal to the magnitude of the current measured in the equipment setting operation S10.

[0140] In other words, in the resonance frequency control operation S30, the resonance point of the process module 50 that changes during the execution of the first substrate processing operation S20 can be changed back to the initial resonance point, which is the resonance point during the equipment setting operation S10. The change of the resonance point can be performed for each of the process modules 50 so that the resonance points between the process modules 50 are equal and matched.

[0141] When the resonance frequency control operation S30 is completed, the second substrate processing operation S40 in which the process module 50 processes the substrate W again can be performed.

[0142] The substrate processing operations S20 and S40 and the resonance frequency control operation S30 can be alternately and repeatedly performed.

[0143] In the above example, the present invention has been described based on the case of performing TTTM between the process modules 50 of a single substrate processing apparatus 1 as an example, but it is not limited thereto. For example, as Figure 6 shown, a semiconductor production line can be equipped with substrate processing apparatuses 1A, 1B, 1C, and 1D of the same type as the substrate processing apparatus 1. The integrated controller 1000 that controls these substrate processing apparatuses 1A, 1B, 1C, and 1D can apply the above resonance frequency control operation S30 to the substrate processing apparatuses 1A, 1B, 1C, and 1D in the same / similar manner.

[0144] It should be understood that the exemplary embodiments disclosed herein are and may have other variations. Each element or feature of a particular exemplary embodiment is generally not limited to that particular exemplary embodiment, but is interchangeable and, even if not specifically stated or described, may be used in a selected exemplary embodiment where applicable. Such modifications should not be regarded as departing from the spirit and scope of the invention, and all modifications that are obvious to those of ordinary skill in the art are intended to be included within the scope of the appended claims.

Claims

1. A manufacturing method, the manufacturing method comprising: an equipment setting operation for matching resonance points of a first process module and a second process module different from the first process module with each other; a first substrate processing operation, wherein the first substrate processing operation processes a substrate in the first process module and / or the second process module; as well as a resonance frequency control operation of adjusting the resonance points of the first process module and the second process module changed in the case of performing the first substrate processing operation to an initial resonance point, The resonant frequency control operation includes controlling at least one of a variable element of a first resonant control circuit of the first process module and a variable element of a second resonant control circuit of the second process module to adjust the resonant points of the first process module and the second process module to the initial resonant point.

2. The manufacturing method according to claim 1, wherein: The first process module includes: a first chamber; a first power supply, the first power supply being an RF power supply for generating plasma or adjusting the flow of plasma in the first chamber; a first cable, the first cable being coupled to an RF signal applied by the first power supply; and a first impedance controller, the first impedance controller being coupled to the first cable, and The second process module includes: a second chamber; a second power supply, which is an RF power supply for generating plasma or adjusting the flow of plasma in the second chamber; a second cable, which is coupled to the RF signal applied by the second power supply; and a second impedance controller, which is connected to the second cable.

3. The manufacturing method according to claim 2, wherein: The device setup operation includes adjusting a length of at least one of the first cable and the second cable.

4. The manufacturing method according to claim 2, wherein: The device setting operation includes controlling at least one of variable elements of the first resonance control circuit and the second resonance control circuit to match the resonance points of the first process module and the second process module with each other.

5. The manufacturing method according to claim 1, wherein: The manufacturing method further comprises: A second substrate processing operation is performed after the resonant frequency controlling operation, in which the first process module and / or the second process module processes the substrate.

6. The manufacturing method according to claim 1, wherein: The resonance frequency control operation is performed when a set number or more of substrates have been processed in the first substrate processing operation.

7. The manufacturing method according to claim 1, wherein: The resonance frequency control operation is performed when a set period of time has elapsed since the first substrate processing operation was performed.

8. A process module matching method, the process module matching method matching the resonance points of multiple process modules, in, Each of the plurality of process modules comprises a chamber, a controller, and a cable connecting the controller and the chamber, and The resonance points of the plurality of process modules are matched by differentiating the lengths of the cables of the plurality of process modules.

9. The process module matching method according to claim 8, wherein: Each of the cables is provided with a resonance control circuit including at least one variable element, and After processing a set number of substrates, the plurality of process modules adjust the variable element of the resonant control circuit.

10. The process module matching method according to claim 9, wherein: The resonance point of the process module is matched by adjusting the variable element.

11. The process module matching method according to claim 10, wherein: The resonance point of the process module is matched with the initial resonance point by adjusting the variable element.

12. A device for processing a substrate, the device comprising: a first process module for processing a substrate by using plasma, Wherein, the first process module comprises: a first chamber providing an inner space in which a substrate is processed by using plasma; a first edge impedance controller, the first edge impedance controller being included in the first process module and being coupled to a first ring electrode by RF, the first ring electrode being positioned at a lower side of an edge region of the substrate processed in the first process module to control a plasma flow in the edge region of the substrate; a first cable having one end and the other end connected to the first chamber and the first edge impedance controller, respectively; and A first resonance control circuit is provided in the first cable to control a resonance point changed by deformation of the first cable.

13. The device according to claim 12, wherein: The first resonance control circuit includes at least one variable element.

14. The device according to claim 12, wherein: The device also includes: a controller configured to control the first resonant control circuit, After the first process module processes a set number of substrates, the controller controls at least one of the variable elements of the first resonance control circuit to adjust the resonance point of the first process module to an initial resonance point.

15. The device according to claim 12, wherein: The device also includes: a second process module for processing the substrate by using plasma, Wherein, the second process module comprises: a second chamber providing an inner space in which the substrate is processed by using plasma; a second edge impedance controller, the second edge impedance controller being included in the second process module and being coupled to a second ring electrode by RF, the second ring electrode being positioned at a lower side of an edge region of the substrate processed in the second process module to control a plasma flow in the edge region of the substrate; a second cable having one end and the other end connected to the second chamber and the second edge impedance controller, respectively; and A second resonance control circuit is provided in the second cable to control a resonance point changed by deformation of the second cable.

16. The device according to claim 15, wherein: The device also includes: a controller configured to control the first resonant control circuit and the second resonant control circuit, The controller controls at least one of the variable elements included in the first resonance control circuit and the second resonance control circuit to match the resonance point of the first process module with the resonance point of the second process module.

17. The device according to claim 15, wherein: The first cable and the second cable have different lengths.

18. The device according to claim 15, wherein: The device also includes: a controller configured to control the first resonant control circuit and the second resonant control circuit, After a set number of substrates are processed in the first process module and the second process module, or after a set time period has passed after a set number of substrates are processed in the first process module and the second process module, the controller adjusts the resonance point of the first process module and the resonance point of the second process module to the initial resonance point by controlling at least one of the variable elements included in the first resonance control circuit and the second resonance control circuit.

19. The device according to claim 12, wherein: The first resonance control circuit comprises: a plurality of variable capacitors, the plurality of variable capacitors being connected in parallel; and An inductor is connected in series with the plurality of variable capacitors.

20. The device according to claim 19, wherein The first resonant control circuit includes a sensor positioned between the inductor and the first edge impedance controller, and The sensor is a sensor capable of measuring current and / or voltage.

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