Titanium nitride film growth method, device, equipment and medium

Abstract

The invention discloses a growth method, device, equipment and medium of a titanium nitride film, and relates to the technical field of semiconductor film preparation, the growth method of the titanium nitride film comprises the following steps: under a vacuum condition, introducing a titanium-containing precursor and ammonia plasma into an atomic layer deposition reaction chamber in a pulse alternating mode, the deposition cycle of a single titanium nitride film is completed on the surface of the glass substrate in the atomic layer deposition reaction chamber; after each deposition cycle, taking the average value of the thickness values of the plurality of thickness detection points of the titanium nitride film as the reference thickness of the titanium nitride film grown in the deposition cycle; and according to the difference value between the target total thickness of the titanium nitride film and the reference thickness of the deposition cycle, dynamically adjusting the deposition cycle times until the thickness of the titanium nitride film reaches the target total thickness. The method is beneficial to improving the deposition rate of the titanium nitride film and improving the uniformity of the film.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor thin film preparation, and in particular to a method, device, equipment and medium for growing titanium nitride thin films. Background Art

[0002] With the continuous development of technology, thin film materials are increasingly widely used in fields such as optics, electronics, and energy. As an important functional thin film material, titanium nitride thin film has excellent optical properties, electrical properties and chemical stability, and is widely used in fields such as solar cells, optical coatings, and microelectronic devices.

[0003] Traditional methods for preparing titanium nitride thin films, such as magnetron sputtering and chemical vapor deposition, have problems such as low deposition rate and poor film uniformity.

[0004] Therefore, how to grow titanium nitride thin films to solve the problems of low deposition rate and poor film uniformity in the prior art has become a technical problem that needs to be urgently solved by those skilled in the art. Summary of the Invention

[0005] The purpose of the present invention is to provide a method, device, equipment and medium for growing titanium nitride thin films to solve the problems of low deposition rate and poor film uniformity in the prior art.

[0006] To achieve the above purpose, the present invention provides the following technical solutions:

[0007] A method for growing titanium nitride thin films includes:

[0008] Under vacuum conditions, a titanium-containing precursor and ammonia plasma are introduced into an atomic layer deposition reaction chamber in a pulsed alternating manner to complete a single deposition cycle of titanium nitride thin film on the surface of a glass substrate in the atomic layer deposition reaction chamber;

[0009] After each deposition cycle, the average value of the thickness values of multiple thickness detection points of the titanium nitride thin film is used as the reference thickness of the titanium nitride thin film grown in the deposition cycle;

[0010] According to the difference between the target total thickness of the titanium nitride thin film and the reference thickness of the deposition cycle, the number of deposition cycles is dynamically adjusted until the thickness of the titanium nitride thin film reaches the target total thickness.

[0011] In an alternative embodiment of the present application, the step of introducing a titanium-containing precursor and ammonia plasma into an atomic layer deposition reaction chamber in a pulsed alternating manner to complete a single deposition cycle of titanium nitride thin film on the surface of a glass substrate in the atomic layer deposition reaction chamber includes:

[0012] For any deposition cycle, a titanium-containing precursor is introduced into the atomic layer deposition reaction chamber in a pulsed manner to form a titanium atomic layer on the surface of the glass substrate;

[0013] An inert gas is introduced into the atomic layer deposition reaction chamber to remove the unreacted titanium-containing precursor and the first by-product in the atomic layer deposition reaction chamber;

[0014] Ammonia plasma is introduced into the atomic layer deposition reaction chamber in a pulsed manner to react the titanium atomic layer with the nitrogen plasma to form the titanium nitride thin film;

[0015] An inert gas is introduced into the atomic layer deposition reaction chamber to remove the unreacted ammonia and the second by-product in the atomic layer deposition reaction chamber.

[0016] In an alternative embodiment of the present application, the pulse time of the titanium-containing precursor and the ammonia plasma is set between 0.1 second and 10 seconds.

[0017] In an alternative embodiment of the present application, before placing the glass substrate in the atomic layer deposition reaction chamber, the method further includes:

[0018] Placing the glass substrate in a mixed solution composed of 50% deionized water and 50% absolute ethanol for primary ultrasonic cleaning;

[0019] Placing the glass substrate after primary ultrasonic cleaning in pure deionized water for secondary ultrasonic cleaning;

[0020] Using an inert gas to dry the glass substrate after secondary ultrasonic cleaning.

[0021] In an alternative embodiment of the present application, when forming the titanium atomic layer and the titanium nitride thin film on the surface of the glass substrate, the temperature of the glass substrate support table is between 300 degrees Celsius and 400 degrees Celsius.

[0022] In an alternative embodiment of the present application, when introducing the inert gas into the atomic layer deposition reaction chamber, the temperature of the inert gas is 100 degrees Celsius.

[0023] In an alternative embodiment of the present application, the titanium-containing precursor includes titanium tetrachloride.

[0024] Compared with the prior art, in the method for growing a titanium nitride thin film provided by the present invention, during the growth of the titanium nitride thin film, the average value of the thickness values of each thickness detection point of the titanium nitride thin film grown in each deposition cycle is detected as the measured value of the film thickness, so as to control the film thickness uniformity. By combining the target total thickness of the titanium nitride thin film and the reference thickness of the titanium nitride thin film after each deposition cycle, precise control of the number of cycles is achieved, which is beneficial to improving the film deposition rate.

[0025] The present invention also provides a growth apparatus for a titanium nitride thin film, comprising:

[0026] A deposition cycle unit for introducing a titanium-containing precursor and ammonia plasma into the atomic layer deposition reaction chamber in a pulsed alternating manner under vacuum conditions to complete a single deposition cycle of the titanium nitride thin film on the surface of the glass substrate in the atomic layer deposition reaction chamber;

[0027] A thickness calculation unit for taking the average value of the thickness values of multiple thickness detection points of the titanium nitride thin film as the reference thickness of the titanium nitride thin film grown in each deposition cycle after each deposition cycle;

[0028] A thickness difference determination unit for dynamically adjusting the number of deposition cycles according to the difference between the target total thickness of the titanium nitride thin film and the reference thickness of the deposition cycle until the thickness of the titanium nitride thin film reaches the target total thickness.

[0029] Compared with the prior art, the beneficial effects of the growth apparatus for a titanium nitride thin film provided by the present invention are the same as those of the growth method for a titanium nitride thin film described in the above technical solution, and will not be elaborated here.

[0030] The present invention also provides an electronic device, comprising:

[0031] A processor;

[0032] A memory for storing instructions executable by the processor;

[0033] The processor is configured to execute the growth method for a titanium nitride thin film described above by running the instructions in the memory.

[0034] Compared with the prior art, the beneficial effects of the electronic device provided by the present invention are the same as those of the growth method for a titanium nitride thin film described in the above technical solution, and will not be elaborated here.

[0035] The present invention also provides a computer storage medium, in which instructions are stored, and when the instructions are run, the growth method for a titanium nitride thin film described above is implemented.

[0036] Compared with the prior art, the beneficial effects of the computer storage medium provided by the present invention are the same as those of the method for growing titanium nitride thin films described in the above technical solution, and will not be elaborated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The drawings described herein are used to provide a further understanding of the present invention and form a part of the present invention. The schematic embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation to the present invention. In the drawings:

[0038] Figure 1 It is a flowchart of a method for growing a titanium nitride thin film provided by an embodiment of the present application.

[0039] Figure 2 It is a structural diagram of a device for growing a titanium nitride thin film provided by an embodiment of the present application.

[0040] Figure 3 It is a schematic structural diagram of an electronic device provided by an embodiment of the present application. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0041] In order to clearly describe the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, terms such as "first" and "second" are used to distinguish the same items or similar items with basically the same functions and effects. For example, the first threshold and the second threshold are only used to distinguish different thresholds and do not limit their order. Those skilled in the art can understand that terms such as "first" and "second" do not limit the quantity and execution order, and "first" and "second" do not necessarily mean different.

[0042] It should be noted that in the present invention, words such as "exemplary" or "for example" are used to indicate examples, illustrations or explanations. Any embodiment or design solution described as "exemplary" or "for example" in the present invention should not be construed as being more preferred or having more advantages than other embodiments or design solutions. Exactly speaking, using words such as "exemplary" or "for example" aims to present relevant concepts in a specific way.

[0043] In the present invention, "at least one" means one or more, and "plurality" means two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone, where A and B can be singular or plural. The character " / " generally indicates that the associated objects before and after are in an "or" relationship. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b or c can mean: a, b, c, the combination of a and b, the combination of a and c, the combination of b and c, or the combination of a, b and c, where a, b, c can be single or multiple.

[0044] With the continuous development of science and technology, thin film materials are increasingly used in the fields of optics, electronics, energy, etc. As an important functional thin film material, titanium nitride thin film has excellent optical properties, electrical properties and chemical stability, and is widely used in solar cells, optical coatings, microelectronic devices and other fields.

[0045] Traditional titanium nitride film preparation methods such as magnetron sputtering and chemical vapor deposition have problems such as low deposition rate and poor film uniformity.

[0046] Therefore, how to grow titanium nitride thin films to solve the problems of low deposition rate and poor film uniformity in the prior art has become a technical problem that those skilled in the art need to solve urgently.

[0047] In order to solve the above technical problems, the present application provides a method, device, equipment and medium for growing a titanium nitride thin film, which are described in detail one by one in the following embodiments.

[0048] Please refer to Figure 1 , Figure 1 A flow chart of a method for growing a titanium nitride film provided in an embodiment of the present application.

[0049] like Figure 1 As shown, the method for growing a titanium nitride thin film includes the following steps S101 to S103.

[0050] S101, under vacuum conditions, introducing a titanium-containing precursor and ammonia plasma into an atomic layer deposition reaction chamber in a pulsed alternating manner to complete a single titanium nitride film deposition cycle on the surface of a glass substrate in the atomic layer deposition reaction chamber.

[0051] In plasma-enhanced atomic layer deposition technology, "pulse alternation" refers to the process mechanism of achieving layer-by-layer growth of thin films by introducing different reaction gases in a time-sharing and sequential manner, supplemented by a purge step.

[0052] In the embodiments of the present application, the above S101 includes the following S1 to S4.

[0053] S1, for any deposition cycle, introduce a titanium-containing precursor into the atomic layer deposition reaction chamber in the form of pulses to generate a titanium atomic layer on the surface of the glass substrate.

[0054] That is, introduce a titanium-containing precursor into the atomic layer deposition reaction chamber with a pulse time of 0.1 second to 10 seconds, so that the titanium-containing precursor forms a monolayer of chemically adsorbed titanium atoms on the glass substrate surface to ensure atomic-level precision for subsequent reactions.

[0055] In an alternative embodiment of the present application, the titanium-containing precursor can be titanium tetrachloride, and Schott BF33 glass can be used as the glass substrate.

[0056] During the actual application process, before performing the deposition cycle on the glass substrate, the surface of the glass substrate needs to be cleaned.

[0057] Specifically, the cleaning of the glass substrate includes:

[0058] Place the glass substrate in a mixed solution composed of 50% deionized water and 50% absolute ethanol for primary ultrasonic cleaning; place the glass substrate after primary ultrasonic cleaning in pure deionized water for secondary ultrasonic cleaning; dry the glass substrate after secondary ultrasonic cleaning with an inert gas.

[0059] During the actual application process, the glass substrate can be first placed in a container, and a mixed solution composed of 50% deionized water and 50% absolute ethanol is poured into the container to ensure that the mixed solution can cover the glass substrate. Then, use an ultrasonic cleaner to clean the glass substrate (for a duration of 30 minutes) to remove impurities and contaminants on the glass substrate surface.

[0060] After cleaning, replace the mixed solution with pure deionized water to ensure that the pure deionized water can cover the glass substrate, and use an ultrasonic cleaner to clean the glass substrate (for a duration of 15 minutes) to further clean the surface of the glass substrate.

[0061] Finally, use an inert gas (such as nitrogen) to dry the surface of the glass substrate to remove moisture and residual liquid on the glass substrate surface.

[0062] S2, introduce an inert gas (such as argon or nitrogen) into the atomic layer deposition reaction chamber to remove the unreacted titanium-containing precursor and the first by-product in the atomic layer deposition reaction chamber.

[0063] That is, an inert gas is introduced to remove unreacted titanium tetrachloride and the first by-products (such as HCl) to prevent them from interfering with subsequent reactions.

[0064] S3, introduce ammonia plasma into the atomic layer deposition reaction chamber in a pulsed manner to generate the titanium nitride thin film through the reaction of the titanium atomic layer and the nitrogen plasma.

[0065] That is, introduce ammonia plasma into the atomic layer deposition reaction chamber, and the pulse time is from 0.1 second to 10 seconds, so that the ammonia plasma reacts with titanium atoms to form a layer of titanium nitride thin film.

[0066] S4, introduce an inert gas into the atomic layer deposition reaction chamber to remove unreacted ammonia and the second by-products in the atomic layer deposition reaction chamber.

[0067] That is, introduce the inert gas again to remove unreacted ammonia and the second by-products (such as NH4Cl) to provide a pure reaction environment for the next deposition cycle.

[0068] In the actual application process, for the above deposition cycle process, the corresponding process conditions are specifically

[0069] The temperature of the glass substrate support table is between 300 °C and 400 °C; the temperature of the delivery pipeline of the titanium-containing precursor is also between 300 °C and 400 °C to ensure that the titanium-containing precursor is completely vaporized before entering the reaction chamber and to avoid its condensation in the pipeline; when introducing the inert gas into the atomic layer deposition reaction chamber, the temperature of the inert gas is 100 °C. The temperature of the titanium-containing precursor is maintained at room temperature to keep the titanium-containing precursor in a liquid state, thereby facilitating the control of the delivery amount of the titanium-containing precursor. The temperature compensation of the atomic layer deposition reaction chamber is set between 0.05 and 0.4 torr (torr); the carrier gas flow rate is set between 10 and 150 standard cubic centimeters per minute (sccm); the pulse time is set between 0.1 and 10 seconds.

[0070] S102, after each deposition cycle, determine the deposition rate of the titanium nitride thin film, and use the average value of the thickness values of multiple thickness detection points of the titanium nitride thin film as the reference thickness of the titanium nitride thin film grown in the deposition cycle.

[0071] After each deposition cycle is completed, further detect the thickness of multiple thickness detection points set on the titanium nitride thin film, and use the average value of the thickness values of each subsequent detection point as the reference thickness of the titanium nitride thin film generated in the deposition cycle.

[0072] In the actual application process, the ellipsometer 9-point film thickness measurement method can be used to determine the reference thickness of the titanium nitride thin film generated in the deposition cycle and the deposition rate of the titanium nitride thin film.

[0073] S103. Dynamically adjust the number of deposition cycles according to the difference between the target total thickness of the titanium nitride thin film and the reference thickness of the deposition cycle, and the average deposition rate of the titanium nitride thin film until the thickness of the titanium nitride thin film reaches the target total thickness.

[0074] The purpose of the above S103 is to detect the reference thickness (i.e., the reference thickness of the titanium nitride thin film) and the deposition rate of the titanium nitride thin film by using non-contact measurement techniques (such as ellipsometer) after each deposition cycle. Considering that there may be certain differences in the deposition rate of each deposition cycle, after each deposition cycle, combined with the average deposition rate of the titanium nitride thin film, dynamically adjust the number of deposition cycles to ensure that after the deposition cycle is completed, the thickness of the titanium nitride thin film reaches the target total thickness.

[0075] Please refer to Table 1. Table 1 shows the film thickness measurement results of the 9-point film thickness measurement method of the ellipsometer provided in the embodiment of the present application. Correspondingly, the target total thickness of the deposition cycle is 40 nm, and a total of 100 deposition cycles are performed.

[0076] Table 1:

[0077]

[0078]

[0079] Based on the above Table 1, it can be seen that based on the average thickness of each detection point, the thickness of the titanium nitride thin film obtained by the deposition cycle is 40.163 nm; the difference between the maximum thickness and the minimum thickness is 0.170 nm; the non-uniformity of the cyclic deposition is 0.212 nm, and the deposition rate of each deposition is 0.402 nm / time.

[0080] Furthermore, in order to verify the uniformity of the titanium nitride thin film obtained by the growth method of the titanium nitride thin film shown in the embodiment of the present application, the resistance of the titanium nitride thin film was further tested. Please refer to Table 2. Table 2 is the resistance test table of the titanium nitride thin film provided in the embodiment of the present application.

[0081] Table 2:

[0082]

[0083]

[0084] As can be seen from Table 2 above, the maximum percentage change in the resistivity of the titanium nitride thin film at different measurement points obtained by the above method is 15.83%, and the radial non-uniformity is 14.67%. Both are within a reasonable range. That is to say, the titanium nitride thin film prepared by this method can effectively solve the problem of conductivity fluctuations caused by uneven thickness.

[0085] In summary, in the growth method of the titanium nitride thin film provided by the embodiment of the present application, during the growth of the titanium nitride thin film, the average value of the thickness values of each thickness detection point of the titanium nitride thin film grown in each deposition cycle is detected as the measured value of the film thickness, so as to control the film thickness uniformity. By combining the target total thickness of the titanium nitride thin film and the reference thickness of the titanium nitride thin film after each deposition cycle growth, precise control of the number of cycles is achieved, which is beneficial to improving the film deposition rate.

[0086] The embodiment of the present application also provides a growth device for a titanium nitride thin film. Please refer to Figure 2 , Figure 2 which is a structural diagram of a growth device for a titanium nitride thin film provided by the embodiment of the present application.

[0087] As Figure 2 shown, the growth device for the titanium nitride thin film includes:

[0088] A deposition cycle unit 201, configured to introduce a titanium-containing precursor and ammonia plasma into the atomic layer deposition reaction chamber in a pulsed alternating manner under a vacuum condition, so as to complete a single deposition cycle of the titanium nitride thin film on the surface of the glass substrate in the atomic layer deposition reaction chamber.

[0089] A thickness calculation unit 202, configured to use the average value of the thickness values of multiple thickness detection points of the titanium nitride thin film as the reference thickness of the titanium nitride thin film grown in the deposition cycle after each deposition cycle.

[0090] A thickness difference determination unit 203, configured to dynamically adjust the number of deposition cycles according to the difference between the target total thickness of the titanium nitride thin film and the reference thickness of the deposition cycle until the thickness of the titanium nitride thin film reaches the target total thickness.

[0091] The titanium-containing precursor and ammonia plasma are introduced into the atomic layer deposition reaction chamber in an alternating pulse manner to complete a single deposition cycle of the titanium nitride thin film on the surface of the glass substrate in the atomic layer deposition reaction chamber, including: for any deposition cycle, introducing the titanium-containing precursor into the atomic layer deposition reaction chamber in the form of a pulse to generate a titanium atomic layer on the surface of the glass substrate; introducing an inert gas into the atomic layer deposition reaction chamber to remove the unreacted titanium-containing precursor and the first by-product in the atomic layer deposition reaction chamber; introducing ammonia plasma into the atomic layer deposition reaction chamber in the form of a pulse to react the titanium atomic layer with the nitrogen plasma to generate the titanium nitride thin film; introducing an inert gas into the atomic layer deposition reaction chamber to remove the unreacted ammonia and the second by-product in the atomic layer deposition reaction chamber.

[0092] In an alternative embodiment of the present application, the pulse times of the titanium-containing precursor and the ammonia plasma are set between 0.1 second and 10 seconds.

[0093] In an alternative embodiment of the present application, before placing the glass substrate in the atomic layer deposition reaction chamber, the method further includes: placing the glass substrate in a mixed solution composed of 50% deionized water and 50% absolute ethanol for primary ultrasonic cleaning; placing the glass substrate after primary ultrasonic cleaning in pure deionized water for secondary ultrasonic cleaning; drying the glass substrate after secondary ultrasonic cleaning with an inert gas.

[0094] In an alternative embodiment of the present application, when generating the titanium atomic layer and the titanium nitride thin film on the surface of the glass substrate, the temperature of the glass substrate support table is between 300 degrees Celsius and 400 degrees Celsius.

[0095] In an alternative embodiment of the present application, when introducing the inert gas into the atomic layer deposition reaction chamber, the temperature of the inert gas is 100 degrees Celsius.

[0096] In an alternative embodiment of the present application, the titanium-containing precursor includes titanium tetrachloride.

[0097] The above method embodiment provided in this embodiment and the system embodiment of the present application belong to the same inventive concept. For technical details not described in detail in this embodiment, reference may be made to the specific processing content of the method for growing a titanium nitride thin film provided in the above embodiment of the present application, which will not be elaborated here.

[0098] This embodiment of the present application also provides an electronic device, such as Figure 3 shown, Figure 3 is a schematic structural diagram of an electronic device provided in an embodiment of the present application.

[0099] Such asFigure 3 As shown, the electronic device includes:

[0100] A processor 210;

[0101] A memory 200 for storing executable instructions of the processor 210;

[0102] The processor 210 is configured to execute the growth method of titanium nitride thin films disclosed in any of the above embodiments by running the instructions in the memory 200.

[0103] The processor 210, the memory 200, the communication interface 220, the input device 230, and the output device 240 are interconnected via a bus. Among them:

[0104] The bus may include a path for transmitting information between various components of the computer system.

[0105] The processor 210 may be a general-purpose processor, such as a general-purpose central processing unit (CPU), a microprocessor, etc., or an application-specific integrated circuit (ASIC), or one or more integrated circuits for controlling the execution of the program of the present invention. It may also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components.

[0106] The processor 210 may include a main processor, and may also include a baseband chip, a modem, etc.

[0107] The memory 200 stores a program for implementing the technical solution of the present invention, and may also store an operating system and other critical services. Specifically, the program may include program code, and the program code includes computer operation instructions. More specifically, the memory 200 may include a read-only memory (ROM), other types of static storage devices that can store static information and instructions, a random access memory (RAM), other types of dynamic storage devices that can store information and instructions, a disk memory, a flash memory, etc.

[0108] The input device 230 may include a device for receiving data and information input by a user, such as a keyboard, a mouse, a camera, a scanner, a touch screen, etc.

[0109] The output device 240 may include a device for allowing information to be output to a user, such as a display screen, a printer, a speaker, etc.

[0110] The communication interface 220 may include a device such as any transceiver to communicate with other devices or communication networks, such as Ethernet, radio access network (RAN), wireless local area network (WLAN), etc.

[0111] The processor 210 executes the programs stored in the memory 200 and calls other devices, which can be used to implement each step of any one of the titanium nitride thin film growth methods provided in the above embodiments of the present application.

[0112] In addition to the above methods and devices, the embodiments of the present application may also be a computer program product, which includes computer program instructions that cause the processor to execute the steps in the titanium nitride thin film growth method of various embodiments of the present application when the computer program instructions are run by the processor.

[0113] The computer program product can be written in any combination of one or more programming languages to write program code for performing the operations of the embodiments of the present application. The programming languages include object-oriented programming languages such as Java, C++, etc., and also include conventional procedural programming languages such as the "C" language or similar programming languages. The program code can be executed completely on the user computing device, partially on the user device, executed as an independent software package, partially on the user computing device and partially on a remote computing device, or completely executed on a remote computing device or server.

[0114] In addition, the embodiments of the present application may also be a storage medium on which a computer program is stored, and the computer program is executed by the processor to perform the steps in the titanium nitride thin film growth method of various embodiments of the present application.

[0115] For the foregoing method embodiments, for the sake of simple description, they are all expressed as a series of action combinations. However, those skilled in the art should know that the present application is not limited by the described action sequence, because according to the present application, certain steps can be performed in other sequences or simultaneously. Secondly, those skilled in the art should also know that the embodiments described in the specification are all preferred embodiments, and the actions and modules involved are not necessarily essential to the present application.

[0116] It should be noted that each embodiment in this specification is described in a progressive manner. The key point of each embodiment is to illustrate the differences from other embodiments. The same or similar parts among the embodiments can be referred to each other. For the device embodiments, since they are basically similar to the method embodiments, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiments.

[0117] The steps in the methods of the embodiments of the present application can be adjusted, combined, and deleted according to actual needs, and the technical features described in the embodiments can be replaced or combined.

[0118] In the devices and terminals of the embodiments of the present application, the modules and sub-modules can be combined, divided, and deleted according to actual needs.

[0119] In several embodiments provided by the present application, it should be understood that the disclosed terminals, devices, and methods can be implemented in other ways. For example, the terminal embodiments described above are merely illustrative. For example, the division of modules or sub-modules is only a logical function division, and there may be other division methods in actual implementation. For example, multiple sub-modules or modules can be combined or integrated into another module, or some features can be ignored or not executed. Another point is that the displayed or discussed couplings or direct couplings or communication connections to each other can be through some interfaces, and the indirect couplings or communication connections of devices or modules can be in electrical, mechanical, or other forms.

[0120] The modules or sub-modules described as separate components may or may not be physically separated. The components as modules or sub-modules may or may not be physical modules or sub-modules, that is, they can be located in one place, or can be distributed to multiple network modules or sub-modules. Some or all of the modules or sub-modules can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0121] In addition, in each embodiment of the present application, the functional modules or sub-modules can be integrated in a processing module, or each module or sub-module can exist physically alone, or two or more modules or sub-modules can be integrated in one module. The above-mentioned integrated modules or sub-modules can be implemented in the form of hardware or in the form of software functional modules or sub-modules.

[0122] Those skilled in the art can further realize that the units and algorithm steps of each example described in combination with the embodiments disclosed in this article can be implemented by electronic hardware, computer software, or a combination of the two. To clearly illustrate the interchangeability of hardware and software, the composition and steps of each example have been generally described according to functions in the above description. Whether these functions are executed in a hardware or software manner depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered to exceed the scope of the present application.

[0123] The steps of the methods or algorithms described in connection with the embodiments disclosed herein may be implemented directly in hardware, in a software unit executed by a processor, or in a combination thereof. The software unit may be placed in a random access memory (RAM), internal memory, read-only memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art.

[0124] Finally, it should also be noted that in this document, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variation thereof is intended to cover non-exclusive inclusion, such that a process, method, article or device comprising a series of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "comprising an..." does not exclude the presence of additional identical elements in the process, method, article or device comprising the element.

[0125] The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for growing a titanium nitride thin film, characterized in that: include: Under vacuum conditions, a titanium-containing precursor and ammonia plasma are introduced into an atomic layer deposition reaction chamber in a pulsed alternating manner to complete a single titanium nitride film deposition cycle on a surface of a glass substrate in the atomic layer deposition reaction chamber; After each deposition cycle, taking the average of the thickness values ​​of the titanium nitride film at a plurality of thickness detection points as the reference thickness of the titanium nitride film grown by the deposition cycle; The number of deposition cycles is dynamically adjusted according to the difference between the target total thickness of the titanium nitride film and the reference thickness of the deposition cycle until the thickness of the titanium nitride film reaches the target total thickness.

2. The method according to claim 1, characterized in that The method comprises: introducing a titanium-containing precursor and an ammonia plasma into an atomic layer deposition reaction chamber in a pulse alternating manner to complete a single titanium nitride film deposition cycle on the surface of a glass substrate in the atomic layer deposition reaction chamber. For any deposition cycle, a titanium-containing precursor is introduced into the atomic layer deposition reaction chamber in a pulsed form to form a titanium atomic layer on the surface of the glass substrate; Introducing an inert gas into the atomic layer deposition reaction chamber to remove unreacted titanium-containing precursor and first byproduct in the atomic layer deposition reaction chamber; Introducing ammonia plasma into the atomic layer deposition reaction chamber in a pulsed form to generate the titanium nitride film through the reaction between the titanium atomic layer and the nitrogen plasma; An inert gas is introduced into the atomic layer deposition reaction chamber to remove unreacted ammonia and the second byproduct in the atomic layer deposition reaction chamber.

3. The method according to claim 1, characterized in that The pulse time of the titanium precursor and the ammonia plasma is set to be between 0.1 seconds and 10 seconds.

4. The method according to claim 1, characterized in that: Before placing the glass substrate in the atomic layer deposition reaction chamber, the method further includes: Placing the glass substrate in a mixture of 50% deionized water and 50% anhydrous ethanol for initial ultrasonic cleaning; Placing the glass substrate after the initial ultrasonic cleaning in pure deionized water for secondary ultrasonic cleaning; The glass substrate after the second ultrasonic cleaning was dried using an inert gas.

5. The method according to claim 2, characterized in that: When the titanium atomic layer and the titanium nitride thin film are generated on the surface of the glass substrate, the temperature of the glass substrate supporting table is between 300 degrees Celsius and 400 degrees Celsius.

6. The method according to claim 2, characterized in that When an inert gas is introduced into the atomic layer deposition reaction chamber, the temperature of the inert gas is 100 degrees Celsius.

7. The method according to claim 1, characterized in that The titanium-containing precursor includes titanium tetrachloride.

8. A titanium nitride thin film growth device, characterized in that: include: A deposition cycle unit, used for introducing a titanium-containing precursor and an ammonia plasma into an atomic layer deposition reaction chamber in a pulsed alternating manner under vacuum conditions to complete a single titanium nitride film deposition cycle on a surface of a glass substrate in the atomic layer deposition reaction chamber; A thickness calculation unit, used for taking the average value of the thickness values ​​of a plurality of thickness detection points of the titanium nitride film as the reference thickness of the titanium nitride film grown by the deposition cycle after each deposition cycle; The thickness difference determination unit is used to dynamically adjust the number of deposition cycles according to the difference between the target total thickness of the titanium nitride film and the reference thickness of the deposition cycle until the thickness of the titanium nitride film reaches the target total thickness.

9. An electronic device, characterized in that: include: processor; a memory for storing instructions executable by the processor; The processor is used to execute the method for growing a titanium nitride thin film according to any one of claims 1 to 7 by running instructions in the memory.

10. A computer storage medium, characterized in that: The computer storage medium stores instructions, and when the instructions are executed, the method for growing a titanium nitride thin film according to any one of claims 1 to 7 is executed.

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