Storage device and detection method and detection device of storage device

Abstract

The invention discloses a storage device and a detection method and device of the storage device. The detection method of the storage device comprises the steps of obtaining a data protection level of the storage device; in response to the condition that the data protection level is lower than a preset level, performing a first test on all the storage blocks to obtain a first error bit number corresponding to any storage area in each storage block; in response to the fact that the first error bit number is larger than a first threshold value and the corresponding storage area is a target storage area, performing a second test on the target storage area to obtain a second error bit number corresponding to the target storage area; wherein the target storage area with the second error bit number smaller than the second threshold value can reduce the error bit number generated in the read-write process through optimization; and determining whether the corresponding storage block is a bad block or not according to the first error bit number and / or the second error bit number. According to the mode, the testing efficiency of testing the storage equipment can be improved, and the product yield of the storage equipment can be improved.

Description

Technical Field

[0001] This application relates to the field of storage devices, in particular to a storage device, a detection method and a detection device for a storage device. Background Art

[0002] Storage devices are widely used in various electronic systems, including, for example, consumer electronic devices (such as mobile phones, cameras, computers, etc.) and enterprise computing systems (such as hard disk drives, random access memories). Storage devices have become more popular than mechanical or other memory storage technologies due to latency, throughput, shock resistance, packaging, and other considerations. Among these non-volatile storage devices, NAND flash is widely popular due to its low manufacturing cost brought about by its high integration.

[0003] Before NAND flash leaves the factory, the supplier needs to perform a factory test on the NAND flash. However, due to the influence of production manufacturing processes and electrical characteristics, etc., some blocks may have defects during the factory test, and most manufacturers will mark the defective blocks with storage defects as original factory bad blocks.

[0004] The applicant has found that using only one threshold parameter for control is likely to cause too many blocks to be marked as bad blocks, but a part of the blocks marked as bad blocks can actually be used for data reading and writing subsequently. Summary of the Invention

[0005] This application provides a storage device, a detection method and a detection device for a storage device, which can improve the detection efficiency of error detection of the storage device during the production process, and can reduce false detection and improve the product yield of the storage device.

[0006] To solve the above technical problems, on the one hand, this application provides a detection method for a storage device. The storage device includes a plurality of storage blocks, and each storage block includes a plurality of storage areas. The detection method includes: obtaining the data protection level of the storage device; in response to the data protection level being lower than a preset level, performing a first test on all storage blocks to obtain the number of first error bits corresponding to any storage area in each storage block; in response to the number of first error bits being greater than a first threshold and the corresponding storage area being a target storage area, performing a second test on the target storage area to obtain the number of second error bits corresponding to the target storage area; wherein, the target storage area with the number of second error bits less than a second threshold can be optimized to reduce the number of error bits generated during the reading and writing process; determining whether the corresponding storage block is a bad block according to the number of first error bits and / or the number of second error bits.

[0007] In some embodiments, in response to the data protection level being higher than or equal to a preset level, a third test is performed on a target storage area to obtain a third error bit count corresponding to the target storage area; and it is determined whether a corresponding storage block is a bad block according to the third error bit count.

[0008] In some embodiments, the error bit count of a non-target storage area in a storage device with a data protection level higher than or equal to the preset level is less than or equal to a first threshold.

[0009] In some embodiments, performing a second test on a target storage area to obtain a second error bit count corresponding to the target storage area includes: obtaining a first voltage corresponding to the second test; wherein the first voltage is different from the voltage corresponding to the first test; and using the first voltage to perform the second test on the target storage area to obtain the second error bit count corresponding to the target storage area.

[0010] In some embodiments, obtaining the first voltage corresponding to the second test includes: obtaining the first voltage from a read retry table.

[0011] In some embodiments, determining whether a corresponding storage block is a bad block according to the first error bit count and / or the second error bit count includes: in response to the first error bit count being greater than the first threshold and the corresponding storage area not being the target storage area, determining that the corresponding storage block is a bad block; and in response to the second error bit count being greater than or equal to the second threshold, determining that the corresponding storage block is a bad block.

[0012] In some embodiments, the target storage area is determined by a process technology and / or a reliability test.

[0013] In some embodiments, at least one word line corresponds to a storage area; performing a second test on a target storage area to obtain a second error bit count corresponding to the target storage area includes: obtaining a target word line corresponding to the target storage area; and performing the second test on the target storage area through the target word line to obtain the second error bit count corresponding to the target storage area.

[0014] To solve the above technical problems, on the other hand, the present application provides a detection device for a storage device, the detection device includes a processing unit, a storage unit, and a communication interface, the storage unit is used to store a computer program, and the processing unit is coupled to the storage device through the communication interface and is used to execute the computer program to implement the above detection method.

[0015] To solve the above technical problems, on the other hand, the present application provides a storage device, the storage device includes a communication interface and a plurality of storage blocks, each storage block includes several storage areas, the communication interface communicates with an external device, and is used to implement the above detection method under the detection instruction of the external device.

[0016] The detection method of a storage device provided by some embodiments of the present application includes: obtaining the data protection level of the storage device; in response to the data protection level being lower than a preset level, performing a first test on all storage blocks to obtain the number of first error bits corresponding to any storage area in each storage block; in response to the number of first error bits being greater than a first threshold and the corresponding storage area being a target storage area, performing a second test on the target storage area to obtain the number of second error bits corresponding to the target storage area; wherein, the target storage area with the number of second error bits less than a second threshold can be optimized to reduce the number of error bits generated during the read and write processes; determining whether the corresponding storage block is a bad block according to the number of first error bits and / or the number of second error bits. In the above manner, the storage device is detected accordingly according to the data protection level, thereby improving the detection efficiency of the storage device. Further, when the data protection level is lower than the preset level, the target storage area with the number of error bits greater than the first threshold is retested, and then the target storage area in these storage blocks directly identified as bad blocks in the related art is re-identified as a bad block, so as to be able to screen out the target storage area with the number of error bits less than the second threshold and meeting the subsequent read and write requirements, effectively improving the detection accuracy of bad blocks and the product yield of the storage device. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts. Among them:

[0018] Figure 1 is a flowchart of the detection method of a storage device in some embodiments of the present application;

[0019] Figure 2 is a flowchart of the detection method of a storage device in some embodiments of the present application;

[0020] Figure 3 is a flowchart of the detection method of a storage device in some application scenarios of the present application;

[0021] Figure 4 is a flowchart of the detection method of a storage device in some embodiments of the present application;

[0022] Figure 5 is a flowchart of the detection method of a storage device in some embodiments of the present application;

[0023] Figure 6 is a structural diagram of a storage device in some embodiments of the present application;

[0024] Figure 7 It is a schematic structural diagram of a detection device for a storage device in some embodiments of the present application. Detailed implementation manners

[0025] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0026] Storage devices are widely used in various electronic systems, including, for example, consumer electronic devices (such as mobile phones, cameras, computers, etc.) and enterprise computing systems (such as hard disk drives, random access memories). Storage devices have become more popular than mechanical or other memory storage technologies due to latency, throughput, shock resistance, packaging, and other considerations. Among these non-volatile storage devices, NAND flash is widely popular due to its low manufacturing cost brought by its high integration.

[0027] Before NAND flash leaves the factory, the supplier needs to perform a factory test on the NAND flash. However, due to the influence of production manufacturing processes and electrical characteristics, etc., some blocks may have defects during the factory test of NAND flash, and most manufacturers will mark the defective blocks with storage defects as original factory bad blocks.

[0028] The applicant found that only using one threshold parameter for control, that is, directly comparing the number of error bits with the threshold parameter to directly determine whether the corresponding block is a bad block, easily causes too many blocks to be marked as bad blocks, but a part of the blocks marked as bad blocks can actually be used for data reading and writing subsequently.

[0029] To solve the above technical problems existing in storage devices such as NAND flash, the present application provides a detection method for storage devices. Refer to Figure 1 , Figure 1 It is a schematic flowchart of a detection method for a storage device in some embodiments of the present application. The detection method may include the following processes:

[0030] Step 11: Obtain the data protection level of the storage device.

[0031] In some embodiments, the storage device may be a random access memory, a flash memory, or other memories, which are not limited here. In the embodiments of the present application, the storage device is composed of multiple storage blocks, where each storage block includes several storage areas.

[0032] In some embodiments, the data protection level is the level of the data stored in the storage device, and these levels are defined by the user, such as level 1, level 2, or level 3. The smaller the number representing the level (such as 1, 2, or 3), the higher / lower the level, and at this time, the higher / lower the requirement for data protection.

[0033] Step 12: In response to the data protection level being lower than the preset level, perform a first test on all storage blocks to obtain the first number of error bits corresponding to any storage area in each storage block.

[0034] In some embodiments, the preset level can be level 1, level 2, level 3, or other levels, which can be determined according to the actual situation of the corresponding storage device and are not limited here.

[0035] In some embodiments, the content of the first test is to perform a low-level format test on all storage blocks in the storage device to obtain the first number of error bits in each storage area of each storage block. Among them, the low-level format test includes reading data, writing data, and erasing data.

[0036] In other embodiments, in response to the data protection level being higher than or equal to the preset level, perform a third test on the target storage area to obtain the third number of error bits corresponding to the target storage area; determine whether the corresponding storage block is a bad block according to the third number of error bits. The relevant detection method can be referred to in the subsequent Figure 2 relevant content.

[0037] Step 13: In response to the first number of error bits being greater than the first threshold and the corresponding storage area being the target storage area, perform a second test on the target storage area to obtain the second number of error bits corresponding to the target storage area; among them, the target storage area with the second number of error bits less than the second threshold can pass optimization to reduce the number of error bits generated during the read and write processes.

[0038] In some embodiments, the size of the first threshold can be determined through multiple production test data, such as 48, 49.

[0039] In some embodiments, the target area can be obtained through the experimental data of the previous work, and the target storage area is the storage area with more error times and / or more error contents during the second test. It should be noted that the target storage areas in different storage devices will also be different.

[0040] In some embodiments, the content of the second test is to perform a low-level format test on all storage blocks in the storage device to obtain the second number of error bits corresponding to any target storage area in each storage block. Among them, the low-level format test includes reading data, writing data, and erasing data.

[0041] In some embodiments, a first voltage corresponding to a second test is obtained; wherein, the first voltage is different from the voltage corresponding to a first test; the target storage area is tested a second time using the first voltage to obtain a second number of error bits corresponding to the target storage area.

[0042] In some embodiments, the first voltage may be obtained from a read retry table provided by the device manufacturer, and the voltage data required for the second test may be re-obtained by looking up the table. The read retry table includes a number of voltage data and / or gear data, and the first voltage may be directly determined through the voltage data / gear data.

[0043] In some embodiments, the test voltage during the test is changed by adjusting the gear of the device / platform. For example, when performing a first test on a storage device, the voltage used is A, and it is found that voltage B is also applicable to testing the storage device. At this time, the storage device may be tested a second time at voltage B. The gear may be determined by looking up a gear table provided by the device / manufacturer. The gear table includes a number of gears such as gears R11 to R55, and each gear may be applicable to different application scenarios, which will not be elaborated here.

[0044] It can be understood that when both the first test and the second test are for reading data, the corresponding voltage at this time is the read voltage; when both the first test and the second test are for writing data, the corresponding voltage at this time is the write voltage; similarly, when both the first test and the second test are for erasing data, the corresponding voltage at this time is the erase voltage. In different test scenarios, the meaning of the voltage is also different.

[0045] Step 14: Determine whether the corresponding storage block is a bad block according to the first number of error bits and / or the second number of error bits.

[0046] In some embodiments, in response to the first number of error bits being greater than a first threshold and the corresponding storage area not being the target storage area, it is determined that the corresponding storage block is a bad block. Specifically, after determining that the first number of error bits is greater than the first threshold, it is determined whether the corresponding storage area is the target storage area. When the corresponding storage area is not the target storage area, it is determined that the corresponding storage block is a bad block.

[0047] In some embodiments, in response to the second number of error bits being greater than or equal to a second threshold, it is determined that the corresponding storage block is a bad block. Specifically, after determining that the first number of error bits is greater than the first threshold and the corresponding storage area is the target storage area, the magnitude relationship between the second error bit data and the second threshold is determined. When it is determined that the second number of error bits is greater than or equal to the second threshold, it is determined that the corresponding storage block is a bad block. The magnitude of the second threshold may be determined through multiple production test data, such as 56, 57.

[0048] It should be noted that in some embodiments of the present application, the second threshold is greater than the first threshold.

[0049] The detection method of the storage device provided in some embodiments of the present application includes: obtaining the data protection level of the storage device; in response to the data protection level being lower than the preset level, performing a first test on all storage blocks to obtain the first number of error bits corresponding to any storage area in each storage block; in response to the first number of error bits being greater than the first threshold and the corresponding storage area being the target storage area, performing a second test on the target storage area to obtain the second number of error bits corresponding to the target storage area; wherein, the target storage area with the second number of error bits less than the second threshold can be optimized to reduce the number of error bits generated during the read and write process; determining whether the corresponding storage block is a bad block according to the first number of error bits and / or the second number of error bits. In the above manner, the storage device is detected accordingly according to the data protection level, thereby improving the detection efficiency of the storage device. Further, when the data protection level is lower than the preset level, the target storage area with the number of error bits greater than the first threshold is retested, and then the target storage area in these storage blocks directly identified as bad blocks in the related art is re-identified as a bad block, so as to be able to screen out the target storage area with the number of error bits less than the second threshold and meeting the subsequent read and write requirements, effectively improving the detection accuracy of bad blocks and the product yield of the storage device.

[0050] Based on this, referring to Figure 2 , Figure 2 is a schematic flowchart of the detection method of the storage device provided in some embodiments of the present application. The detection method may include the following processes:

[0051] Step 21: Obtain the data protection level of the storage device.

[0052] Step 22: In response to the data protection level being higher than or equal to the preset level, perform a third test on the target storage area to obtain the third number of error bits corresponding to the target storage area.

[0053] In some embodiments, the target storage area is obtained through the experimental data of the previous work, and the target storage area is the storage area with more error times and / or more error contents during the third test.

[0054] It should be noted that there are also differences in the target storage areas of different storage devices. For example, the target storage area of a flash memory is areas 126 - 127, and the target storage area of a random access memory is areas 100 - 127. The reasons for the differences can be attributed to the process technology and / or reliability testing. That is to say, the target storage area can be determined by the process technology and / or reliability testing. For example, the fluctuations in the process technology of the supplier; or, in order to meet the relevant information such as reliability, product performance, and quality, some parameters are adjusted for adaptation, resulting in the generation of some target storage areas.

[0055] In some embodiments, the number of error bits in the non-target storage area of a storage device with a data protection level higher than or equal to a preset level is less than or equal to a first threshold. It can be understood that for a storage device with a high data protection level, the storage areas with the number of error bits less than or equal to the first threshold are not bad blocks by default. Even if a first test is performed on them, the number of error bits in these storage areas remains less than or equal to the first threshold. Therefore, when the data protection level of the storage device is higher than or equal to the preset level, there is no need to test the non-target storage area, and only the target storage area needs to be tested.

[0056] Specifically, the determination of the target storage area can be obtained through the following process (not shown in the figure):

[0057] S1: Perform a first test on the storage blocks in the storage device to obtain the number of error bits corresponding to any storage area in each storage block.

[0058] S2: Compare the size of the number of error bits with the first threshold.

[0059] S3: In response to the number of error bits being greater than the first threshold, determine that the corresponding storage block is a bad block, and determine the target storage area in the bad block.

[0060] S4: In response to the number of error bits being less than or equal to the first threshold, determine that the corresponding storage block is not a bad block, and continue to detect the next storage block.

[0061] Among them, steps S3 and S4 are different, and they do not exist simultaneously when judging the same storage area.

[0062] In some embodiments, the content of the third test is to perform a low-level format test on all storage blocks in the storage device to obtain the third number of error bits in any target storage area in each storage block. Among them, the low-level format test includes at least one of reading data, writing data, and erasing data.

[0063] Step 23: Determine whether the corresponding storage block is a bad block according to the third number of error bits.

[0064] In some embodiments, in response to the third error bit data being greater than a preset threshold, the corresponding storage block is determined to be a bad block. Specifically, by comparing the third error bit count with the preset threshold, it is determined whether the storage block corresponding to each third error bit count is a bad block. Among them, the size of the preset threshold can be obtained from production test data, such as 50, 51.

[0065] It should be noted that when the target storage area is obtained by performing a first test on the storage blocks in the storage device and comparing the first error bit count corresponding to any storage area in each storage block with the first threshold, the first threshold is less than the preset threshold.

[0066] In the embodiments of the present application, by directly testing the target storage area of the storage blocks in the storage device, based on the third error bit count corresponding to each target storage area, it is determined whether there is data loss or other risks in the corresponding storage block during its life cycle. When it is determined that data loss or other risks will occur, the storage block is marked as a bad block and removed, and then the next storage block is continuously detected. The above method of purposefully / targetedly detecting the target storage area can not only reduce the detection time and improve the detection efficiency, but also improve the product yield of the storage device.

[0067] Moreover, it should be noted that only when there are good data protection measures to ensure quality and Defects Parts Per Million (DPPM), can the detection be only targeted at the target storage area. That is, the detection method of the storage device as Figure 1 shown is simplified to obtain the detection method of the storage device as Figure 2 shown.

[0068] In the two embodiments provided by the present application, for a storage device storing highly confidential data, in order to ensure data security, relatively strict requirements are imposed during production. At this time, the detection method as Figure 1 and Figure 2 shown can be used to detect the storage device to ensure high security performance of the storage device when storing highly confidential data; when storing data with lower security requirements, the detection method as Figure 1 shown can be used to detect the storage device at this time. Figure 2 shown can be used to detect the storage device.

[0069] In some application scenarios, referring to Figure 3 , Figure 3 shown, the detection method of the storage device may include the following process:

[0070] Step 31: Obtain the data protection level of the storage device.

[0071] Step 32: Determine whether the data protection level is lower than the preset level.

[0072] If so, execute Step 33; otherwise, execute Step 38.

[0073] Step 33: Conduct a first test on all storage blocks to obtain the number of first error bits corresponding to any storage area in each storage block.

[0074] Step 34: Determine whether the number of first error bits is greater than the first threshold.

[0075] If so, execute Step 35.

[0076] Step 35: Determine whether the corresponding storage area is the target storage area.

[0077] If so, execute Step 36.

[0078] Step 36: Conduct a second test on the target storage area to obtain the number of second error bits corresponding to the target storage area; among them, the target storage area with the number of second error bits less than the second threshold can be optimized to reduce the number of error bits generated during the read and write processes.

[0079] Step 37: Determine whether the number of second error bits is greater than or equal to the second threshold.

[0080] If so, determine that the corresponding storage block needs to be marked as a bad block; otherwise, determine that the corresponding storage block does not need to be marked as a bad block.

[0081] Step 38: Conduct a third test on the target storage area to obtain the number of third error bits corresponding to the target storage area.

[0082] Step 39: Determine whether the third error bit data is greater than the preset threshold.

[0083] If so, determine that the corresponding storage block is a bad block.

[0084] In some embodiments provided by the present application, by obtaining the data protection level of the storage device, a suitable detection method is selected. When determining whether the data protection level of the storage device is lower than the preset level, three judgments are required, namely comparing with the first threshold, determining whether it is the target storage area, and comparing with the second threshold; when the data protection level of the storage device is higher than or equal to the preset level, only the target storage area needs to be detected, and by comparing the size relationship between the number of third error bits of the target storage area and the preset threshold, it is determined whether the corresponding storage block is a bad block. The two detection methods provided by the present application can detect the storage device specifically, and one of the detection methods is more convenient in procedure and saves more detection time compared with the other detection method.

[0085] In some embodiments, a storage device includes a plurality of storage blocks, each storage block includes a plurality of storage regions, one storage region corresponds to one word line, or one storage region corresponds to multiple word lines. At this time, each storage block includes several word lines. In practical applications, the word line is connected to the gate of a MOS (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET) transistor. At this time, the MOS transistor is equivalent to a switch, and the voltage on the word line can turn the MOS transistor on / off. Furthermore, data can be read from and written to a storage cell through a bit line, and error detection and the like can be performed on the corresponding storage region through the bit line. At this time, reference can be made to Figure 4 and Figure 5 。

[0086] Figure 4 The detection method of the storage device shown can include the following processes:

[0087] Step 41: Obtain the data protection level of the storage device.

[0088] Step 42: In response to the data protection level being lower than a preset level, perform a first test on all storage blocks to obtain the first number of error bits corresponding to any storage region in each storage block.

[0089] Step 43: In response to the first number of error bits being greater than a first threshold and the corresponding storage region being the target storage region, obtain the target word line corresponding to the target storage region.

[0090] In some embodiments, since the storage region can be determined by the intersection of the word line and the bit line, at this time, the target word line can be determined based on the target storage region.

[0091] Step 44: Perform a second test on the target storage region through the target word line to obtain the second number of error bits corresponding to the target storage region; among them, the target storage region with the second number of error bits less than the second threshold can be optimized to reduce the number of error bits generated during the read / write process.

[0092] Step 45: Determine whether the corresponding storage block is a bad block according to the first number of error bits and / or the second number of error bits.

[0093] Figure 5 The detection method of the storage device shown can include the following processes:

[0094] Step 51: Obtain the data protection level of the storage device.

[0095] Step 52: In response to the data protection level being higher than or equal to the preset level, obtain the target word line corresponding to the target storage region.

[0096] Step 53: Perform a third test on the target storage area through the target word line to obtain the number of third error bits corresponding to the target storage area.

[0097] Step 54: Determine whether the corresponding storage block is a bad block according to the number of third error bits.

[0098] The detection method of the storage device provided in some embodiments of the present application can not only improve the detection efficiency of error detection of the storage device during the production process, but also reduce false detection and improve the product yield of the storage device.

[0099] See Figure 6 , Figure 6 is a schematic structural diagram of the storage device 60 in some embodiments of the present application. The storage device 60 includes a communication interface 601 and a plurality of storage blocks 602. Each storage block 602 contains several storage areas 603. The communication interface 601 communicates with an external device and is used to implement the detection method of the storage device 60 in any of the above embodiments under the detection instruction of the external device, which will not be elaborated here.

[0100] In some embodiments, the communication interface 601 may be a SATA (Serial Advanced Technology Attachment) interface, a SAS (Serial Attached SCSI) interface, an NVMe (Non-volatile memory express) interface, an IDE (Integrated Drive Electronics) interface, a SCSI (Small Computer System Interface) interface, or a USB (Universal Serial Bus) interface, etc. The specific communication interface 601 used can be determined according to the storage device 60 and the external device, and is not limited here.

[0101] In some embodiments, the external device may be a laptop computer, a desktop computer, a smart wearable device, or other smart devices, and is not limited here.

[0102] See Figure 7 , Figure 7It is a schematic structural diagram of a detection device for a storage device 60 in some embodiments of the present application. The detection device 70 includes a storage unit 701, a processing unit 702, and a communication interface 703. Among them, the storage unit 701 is used to store computer programs. The processing unit 702 is coupled to the storage device 60 through the communication interface 703. The processing unit 702 can execute the computer program to implement the detection method of the storage device 60 in any of the above embodiments, which will not be elaborated here.

[0103] In some embodiments, the storage unit 701 can be various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), or an optical disc.

[0104] In some embodiments, the processing unit 702 can be a CPU (Central Processing Unit), can be an integrated circuit chip, and can also be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components.

[0105] In some embodiments, the communication interface 703 can be the same as or similar to the above communication interface 601. That is, the communication interface 703 can be an interface that can interact, such as a SATA (Serial Advanced Technology Attachment) interface, a SAS (Serial Attached SCSI) interface, an NVMe (Non-volatile memory express) interface, an IDE (Integrated Drive Electronics) interface, a SCSI (Small Computer System Interface) interface, or a USB (Universal Serial Bus) interface.

[0106] In summary, the present application provides two detection methods for storage devices. One of them is relatively simpler in process than the other. Although the two detection methods have different processes, both detection methods for storage devices can improve the detection efficiency of error detection of storage devices in the production process, and can also reduce misdetection and improve the product yield of storage devices.

[0107] The above are only the embodiments of the present application, and do not thus limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall similarly be included within the patent protection scope of the present application.

Claims

1. A detection method for a storage device, characterized in that The storage device includes a plurality of storage blocks, and each of the storage blocks includes a plurality of storage areas. The detection method includes: Obtaining the data protection level of the storage device; In response to the data protection level being lower than a preset level, performing a first test on all the storage blocks to obtain a first number of error bits corresponding to any storage area in each storage block; In response to the first number of error bits being greater than a first threshold and the corresponding storage area being a target storage area, performing a second test on the target storage area to obtain a second number of error bits corresponding to the target storage area; wherein, the target storage area with the second number of error bits less than a second threshold can be optimized to reduce the number of error bits generated during the read / write process; Determining whether the corresponding storage block is a bad block according to the first number of error bits and / or the second number of error bits.

2. The detection method according to claim 1, wherein: In response to the data protection level being higher than or equal to the preset level, performing a third test on the target storage area to obtain a third number of error bits corresponding to the target storage area; Determining whether the corresponding storage block is a bad block according to the third number of error bits.

3. The detection method according to claim 2, characterized in that, The number of error bits in the non-target storage areas in the storage device with the data protection level higher than or equal to the preset level is less than or equal to the first threshold.

4. The detection method according to claim 1, wherein: The performing a second test on the target storage area to obtain a second number of error bits corresponding to the target storage area includes: Obtaining a first voltage corresponding to the second test; wherein, the first voltage is different from the voltage corresponding to the first test; Performing the second test on the target storage area by using the first voltage to obtain a second number of error bits corresponding to the target storage area.

5. The detection method according to claim 4, wherein: The obtaining a first voltage corresponding to the second test includes: Obtaining the first voltage from a read retry table.

6. The detection method according to claim 1, wherein: The determining whether the corresponding storage block is a bad block according to the first number of error bits and / or the second number of error bits includes: In response to the first number of error bits being greater than the first threshold and the corresponding storage area not being the target storage area, determining that the corresponding storage block is a bad block; In response to the second number of error bits being greater than or equal to the second threshold, determining that the corresponding storage block is a bad block.

7. The detection method according to claim 1, characterized in that The target storage area is determined by a process technology and / or a reliability test.

8. The detection method according to claim 1, characterized in that, At least one word line corresponds to one storage area; The performing a second test on the target storage area to obtain a second number of error bits corresponding to the target storage area includes: Obtaining a target word line corresponding to the target storage area; Performing a second test on the target storage area through the target word line to obtain a second number of error bits corresponding to the target storage area.

9. A detection device for a storage device, characterized in that, The detection device includes a processing unit, a storage unit, and a communication interface. The storage unit is used to store computer programs. The processing unit is coupled to the storage device through the communication interface and is used to execute the computer programs to implement the detection method according to any one of claims 1-8.

10. A storage device, characterized in that, The storage device includes a communication interface and a plurality of storage blocks. Each storage block contains a number of storage areas. The communication interface communicates with external devices and is used to implement the detection method according to any one of claims 1-8 under the detection instructions of external devices.

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