Light emitting diode structure with electrostatic protection function
By designing a light emitting diode structure with electrostatic protection function, using conductive ring, electrostatic breakdown unit and electrostatic elimination unit, the problem of poor light emission effect of the light emitting diode in an electrostatic environment is solved, and effective protection and removal of static electricity is achieved.
Patent Information
- Application Number
- CN202510352041.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-25
- Publication Date
- 2025-06-27
- Estimated Expiration
- 2045-03-25
AI Technical Summary
Light emitting diodes are easily subject to static interference in an electrostatic environment, resulting in poor luminescence effect. It is difficult for the prior art to effectively protect the impact of weaker static electricity in the environment on the light emitting diodes.
A light emitting diode structure with electrostatic protection function is designed, including an insulating base, a transparent lamp cover, a semiconductor light emitting assembly, a conductive ring, an electrostatic breakdown unit and an electrostatic elimination unit. The electrostatic charge is directed to the electrostatic breakdown unit through the conductive ring and the transparent conductive coating, and the electrostatic charge is derived through the electrostatic elimination unit to avoid electrostatic interference.
It effectively avoids the invasion of the semiconductor light-emitting components, improves the light-emitting effect of the light-emitting diode, and realizes effective removal and elimination of static electricity through the electrostatic breakdown unit and the electrostatic elimination unit.
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Figure CN120224875A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of semiconductor devices, and particularly relates to a light-emitting diode structure with electrostatic protection function. Background Art
[0002] As a highly efficient and energy-saving semiconductor light-emitting device, the light-emitting diode is now widely used in many fields such as lighting, display, signal indication, etc. It has the advantages of long life, fast response speed, low power consumption, etc., which greatly promotes the development of various industries.
[0003] The interior of the light-emitting diode is composed of fine semiconductor materials, and its PN junction structure is fragile. The instantaneous high voltage generated by static electricity is extremely easy to break down the PN junction, resulting in the abnormal operation of the light-emitting diode. Therefore, in order to reduce the impact of static electricity on the light-emitting diode, electrostatic protection needs to be carried out on the light-emitting diode, such as the light-emitting diode device disclosed in the patent publication number CN101924099B; currently, the protection of the light-emitting diode often relies on components such as ESD protection diodes. When an electrostatic surge appears in the circuit and the electrostatic voltage reaches the threshold of the ESD protection diode, it will timely lead out the electrostatic current and interrupt the abnormal current leading to the light-emitting element of the light-emitting diode, so as to ensure the safety of the light-emitting element. However, the ESD protection diode mainly deals with the electrostatic surge in the circuit. For the relatively weak static electricity in the environment, its voltage cannot trigger the threshold of the ESD protection diode. Although these static charges may not directly damage the light-emitting element, when they come into contact with the light-emitting element, even if they do not cause physical damage to the PN junction, a local electric field will be formed near the PN junction, and this electric field will interfere with the normal distribution of carriers (electrons and holes) inside the semiconductor, thereby affecting the light-emitting effect of the light-emitting diode. Summary of the Invention
[0004] The purpose of the present invention is to solve the above problems and provide a light-emitting diode structure with electrostatic protection function.
[0005] To achieve the above purpose, the present invention adopts the following technical solutions: A light-emitting diode structure with electrostatic protection function, including an insulating base and a transparent lamp cover installed on the end face of the insulating base. A semiconductor light-emitting component is arranged inside the transparent lamp cover, and further includes:
[0006] A conductive ring, fixedly sleeved on the outer side wall of the transparent lamp cover, and the conductive ring is fixedly connected to the top of the insulating base. The outer side wall of the transparent lamp cover and the side wall of the insulating base are both coated with a transparent conductive coating;
[0007] An electrostatic breakdown unit, installed at the bottom of the insulating base. The conductive ring is provided with a conductive component, and the conductive ring guides static charges to the electrostatic breakdown unit through the conductive component;
[0008] The static electricity elimination unit is installed inside the static electricity breakdown unit, and the static electricity elimination unit exports static charges.
[0009] In the above-mentioned light-emitting diode structure with static electricity protection function, the static electricity breakdown unit includes an insulating block. An installation groove is formed at the bottom of the insulating base, and the insulating block is fixedly connected to the notch of the installation groove. A hollow steel ball is fixedly installed on the end face of the insulating block. A discharge tip cone and a receiving tip cone are arranged inside the hollow steel ball. The discharge tip cone is installed on the top of the insulating block and does not contact the hollow steel ball. The receiving tip cone is installed on the inner wall of the hollow steel ball. An exhaust hole is formed in the side wall of the hollow steel ball.
[0010] In the above-mentioned light-emitting diode structure with static electricity protection function, the conductive component includes two conductive rods. Both of the two conductive rods are U-shaped. One end of each of the two conductive rods is fixedly connected to the outer side wall of the conductive ring, and a conductive column is fixedly connected to the opposite ends of the two conductive rods together. The conductive column penetrates through the insulating block and is fixedly connected to the bottom of the discharge tip cone.
[0011] In the above-mentioned light-emitting diode structure with static electricity protection function, the static electricity elimination unit includes a conductive frame strip sleeved outside the hollow steel ball, and the conductive frame strip is fixedly installed on the top of the insulating block. A metal mesh cover is fixedly installed on the top of the insulating block, and the hollow steel ball is arranged inside the metal mesh cover. Two grounding pins are fixedly inserted at the bottom of the insulating block, and both of the two grounding pins are in contact with the conductive frame strip.
[0012] In the above-mentioned light-emitting diode structure with static electricity protection function, the semiconductor light-emitting component includes a reflective cone cover arranged inside the transparent lamp cover. An insulating heat-conducting base is fixedly installed inside the reflective cone cover. A semiconductor light-emitting element is installed on the top of the insulating heat-conducting base. Conductive blocks are arranged at both sides of the reflective cone cover inside the transparent lamp cover, and both of the two conductive blocks are electrically connected to the semiconductor light-emitting element through conductive wires. Conductive pins are fixedly installed at the bottoms of the two conductive blocks, and the lower ends of both of the two conductive pins penetrate through the insulating base and extend below the insulating base.
[0013] In the above-mentioned light-emitting diode structure with static electricity protection function, an annular exhaust groove is formed in the groove wall of the installation groove, a plurality of soot-blowing grooves are formed in the inner wall of the conductive ring, a plurality of communication holes are formed in the upper groove wall of the annular exhaust groove, and each of the communication holes is communicated with the soot-blowing groove.
[0014] In the above-mentioned light-emitting diode structure with static electricity protection function, a heat-conducting column is integrally formed on the end face of the insulating base, and the heat-conducting column penetrates through the reflective cone cover and is fixedly connected to the bottom of the insulating heat-conducting base. A plurality of heat-dissipating columns are fixedly installed at the outer edge of the lower end of the insulating base.
[0015] In the above-mentioned light-emitting diode structure with electrostatic protection function, insulating sleeves are fixedly sleeved on the outer side walls of the two conductive pins, and the insulating sleeves penetrate through the end face of the insulating base and contact the bottom of the conductive block on the same side.
[0016] Compared with the existing technology, the advantages of a light-emitting diode structure with electrostatic protection function are as follows:
[0017] 1. Through the mutual cooperation of the provided insulating base, transparent lamp cover, and semiconductor light-emitting component, light can be emitted. And through the mutual cooperation of the provided conductive ring and transparent conductive coating, static electricity in the surrounding environment can be guided to the conductive ring, and with the provided static electricity breakdown unit and conductive component, the static charges are concentrated and collected inside the static electricity breakdown unit, so that static charges can be prevented from invading the semiconductor light-emitting component and affecting the light-emitting effect of the semiconductor light-emitting component.
[0018] 2. Through the static electricity breakdown unit and the provided annular exhaust groove, air blowing holes, and communication holes, static electricity can be concentrated, and after the static electricity intensity reaches a certain level, by breaking through the air, air flow is generated, and the air flow is used to assist in removing dust that may adhere to the outer surface of the transparent lamp cover.
[0019] 3. Through the provided static electricity elimination unit, the static charges generated after the static electricity breakdown unit breaks through the air can be timely guided and discharged, so that static charges can be prevented from affecting the normal operation of the light-emitting diode. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 is a three-dimensional structural schematic diagram of a light-emitting diode structure with electrostatic protection function provided by the present invention;
[0021] Figure 2 is a cross-sectional structural schematic diagram of a light-emitting diode structure with electrostatic protection function provided by the present invention;
[0022] Figure 3 is an internal structural schematic diagram of the reflective cone cover of a light-emitting diode structure with electrostatic protection function provided by the present invention;
[0023] Figure 4 is a three-dimensional structural schematic diagram of the static electricity breakdown unit of a light-emitting diode structure with electrostatic protection function provided by the present invention;
[0024] Figure 5 is an internal structural schematic diagram of the hollow steel ball of a light-emitting diode structure with electrostatic protection function provided by the present invention;
[0025] Figure 6 is a light-emitting diode structure with electrostatic protection function provided by the present inventionFigure 1 Enlarged view of the structure of part A;
[0026] Figure 7 It is a structure of a light-emitting diode with electrostatic protection function provided by the present invention Figure 2 Enlarged view of the structure of part B.
[0027] In the figure: 1 insulating base, 2 transparent lampshade, 3 semiconductor light-emitting component, 31 reflective cone cover, 32 insulating heat-conducting base, 33 semiconductor light-emitting element, 34 conductive block, 35 conductive pin, 4 conductive ring, 5 electrostatic breakdown unit, 51 insulating block, 52 mounting groove, 53 hollow steel ball, 54 discharge tip, 55 receiving tip, 56 exhaust hole, 6 conductive component, 61 conductive rod, 62 conductive column, 7 electrostatic elimination unit, 71 conductive frame strip, 72 metal mesh cover, 73 grounding pin, 8 annular exhaust groove, 9 soot blowing groove, 10 communication hole, 11 heat-conducting column, 12 heat-dissipating column, 13 insulating sleeve. Specific embodiments
[0028] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments.
[0029] As Figures 1-7 shown, a light-emitting diode structure with electrostatic protection function includes an insulating base 1 and a transparent lampshade 2 installed on the end face of the insulating base 1. A semiconductor light-emitting component 3 is arranged inside the transparent lampshade 2, and further includes: a conductive ring 4, the conductive ring 4 is fixedly sleeved on the outer side wall of the transparent lampshade 2, and the conductive ring 4 is fixedly connected to the top of the insulating base 1. The outer side wall of the transparent lampshade 2 and the side wall of the insulating base 1 are both coated with a transparent conductive coating, and the transparent conductive coating adopts an indium tin oxide coating.
[0030] The electrostatic breakdown unit 5 is installed at the bottom of the insulating base 1. The electrostatic breakdown unit 5 includes an insulating block 51. An installation groove 52 is opened at the bottom of the insulating base 1, and the insulating block 51 is fixedly connected to the notch of the installation groove 52. A hollow steel ball 53 is fixedly installed on the end face of the insulating block 51. A discharge tip 54 and a receiving tip 55 are arranged inside the hollow steel ball 53. The discharge tip 54 is installed on the top of the insulating block 51 and does not contact the hollow steel ball 53. The receiving tip 55 is installed on the inner wall of the hollow steel ball 53. An exhaust hole 56 is opened on the side wall of the hollow steel ball 53. As static charges accumulate at the discharge tip 54, the intensity of the static charges continuously increases until the air is broken down with the cooperation of the receiving tip 55.
[0031] The conductive ring 4 is installed with a conductive component 6. The conductive ring 4 guides static charges to the electrostatic breakdown unit 5 through the conductive component 6. The conductive component 6 includes two conductive rods 61, both of which are U-shaped. One end of each of the two conductive rods 61 is fixedly connected to the outer side wall of the conductive ring 4, and a conductive column 62 is fixedly connected to the opposite ends of the two conductive rods 61. The conductive column 62 penetrates through the insulating block 51 and is fixedly connected to the bottom of the discharge tip 54. The static charges of the conductive ring 4 will move to the discharge tip 54 through the conductive rod 61.
[0032] The static electricity elimination unit 7 is installed inside the electrostatic breakdown unit 5. The static electricity elimination unit 7 exports static charges. The static electricity elimination unit 7 includes a conductive frame strip 71 sleeved outside the hollow steel ball 53, and the conductive frame strip 71 is fixedly installed on the top of the insulating block 51. A metal mesh cover 72 is fixedly installed on the top of the insulating block 51, and the hollow steel ball 53 is arranged inside the metal mesh cover 72. The bottom of the insulating block 51 is fixedly plugged with grounding pins 73, and both of the two grounding pins 73 are in contact with the conductive frame strip 71. The grounding pins 73 are used to connect with a grounding wire, so as to be able to timely guide and discharge the static charges for elimination.
[0033] The semiconductor light-emitting component 3 includes a reflective cone cover 31 arranged inside the transparent lamp cover 2. An insulating heat-conducting base 32 is fixedly installed inside the reflective cone cover 31. A semiconductor light-emitting element 33 is installed on the top of the insulating heat-conducting base 32. Conductive blocks 34 are arranged on both sides of the reflective cone cover 31 inside the transparent lamp cover 2, and both of the two conductive blocks 34 are electrically connected to the semiconductor light-emitting element 33 through conductive wires. The bottoms of both of the two conductive blocks 34 are fixedly installed with conductive pins 35, and the lower ends of both of the two conductive pins 35 penetrate through the insulating base 1 and extend below the insulating base 1. The inside of the reflective cone cover 31 is filled with fillers such as silica gel for protecting the semiconductor light-emitting element 33.
[0034] An annular exhaust groove 8 is formed in the groove wall of the installation groove 52, and a plurality of soot blowing grooves 9 are formed in the inner wall of the conductive ring 4. A plurality of communication holes 10 are formed in the upper groove wall of the annular exhaust groove 8, and each of the communication holes 10 is communicated with the soot blowing groove 9. Through the annular exhaust groove 8 and the communication holes 10, the airflow generated when the air is broken down can be timely guided and discharged, and the dust that may adhere to the outer surface of the transparent lamp cover 2 is blown off by the discharged airflow, so as to avoid the dust from affecting the light-emitting effect of the light-emitting diode.
[0035] The end face of the insulating base 1 is integrally formed with heat-conducting columns 11, and the heat-conducting columns 11 penetrate through the reflecting cone cover 31 and are fixedly connected to the bottom of the insulating heat-conducting base 32. A plurality of heat-dissipating columns 12 are fixedly installed at the outer edge of the lower end of the insulating base 1. Through the contact between the heat-conducting columns 11 and the insulating heat-conducting base 32, the heat generated when the semiconductor light-emitting element 33 works can be directly conducted to the insulating base 1 through the heat-conducting columns 11. And through the plurality of heat-dissipating columns 12 at the bottom of the insulating base 1, the contact area with the air can be increased, thereby improving the heat-dissipating efficiency of the light-emitting diode and facilitating the stable operation of the light-emitting diode.
[0036] Insulating sleeves 13 are fixedly sleeved on the outer side walls of the two conductive pins 35, and the insulating sleeves 13 penetrate through the end face of the insulating base 1 and are in contact with the bottom of the conductive block 34 on the same side. The insulating sleeves 13 can seal the connection between the conductive pins 35 and the insulating base 1 to prevent air flow from being discharged through the annular exhaust groove 8.
[0037] Now, the operating principle of the present invention is described as follows: The external supply current supplies power to the semiconductor light-emitting assembly 3 through the two conductive pins 35 and the two conductive blocks 34. When the current flows through the semiconductor light-emitting assembly 3, the positively charged holes in the P region and the negatively charged electrons in the N region of the semiconductor light-emitting assembly 3 will diffuse towards each other's regions under the action of the electric field. Near the PN junction, the electrons and holes meet and recombine, and the electrons transition from a high energy level to a low energy level, and the excess energy is released in the form of photons, thereby realizing light emission. Under the action of the reflecting cone cover 31, the light is concentrated and diffused outward from the top of the reflecting cone cover 31;
[0038] During the use of the photodiode, due to vibrations and other effects, static charges may be generated around the light-emitting diode. The static charges will first come into contact with the transparent conductive coatings on the side walls of the transparent lamp cover 2 and the insulating base 1. Since the transparent conductive coating is in contact with the conductive ring 4, and the conductive ring 4 is in contact with the discharge tip 54 through the conductive rod 61 and the conductive column 62. According to the principle of electrostatic equilibrium, the electric field strength on the surface of a conductor is proportional to the surface charge density. The curvature at the discharge tip 54 is large, and the charge density is relatively high, resulting in a stronger electric field. Under the action of the strong electric field, the charges will be subjected to a greater electric force, so it is easier to move and accumulate towards the discharge tip 54. Therefore, the static charges will be guided to the discharge tip 54. Therefore, for the relatively weak static charges existing in the surrounding environment, these static charges will be attracted to the discharge tip 54, avoiding the direct intrusion of the relatively weak static charges in the environment into the interior of the light-emitting diode and directly contacting the semiconductor light-emitting element 33, thereby affecting the light-emitting quality of the semiconductor light-emitting element 33;
[0039] And when the static charges at the discharge tip 54 reach a certain intensity (between 10 -7 C and 10 -6Within the range of C, the distance between the discharge tip 54 and the receiving tip 55 is less than 2 cm. When the static charge reaches 10 -7 C to 10 -6 C, and the end of the discharge tip 54 is sharp. According to the principle of point discharge, charges will concentrate at the tip, generating a strong electric field. And according to the formula E = U / d, where E is the electric field strength, U is the voltage, and d is the distance. When the amount of charge is constant, the smaller the distance d, the greater the electric field strength E between the discharge tip 54 and the receiving tip 55. Due to the presence of the receiving tip cone 55, the electric field distribution will be mutually affected. The charge distribution of the discharge tip cone 54 with static charge is concentrated and the electric field is strong. Coupled with the presence of the receiving tip cone 55 on the other side, the electric field strength between the two is enhanced. When this combined electric field strength exceeds the air breakdown field strength, the air is ionized to form a conductive channel, enabling the discharge tip cone 54 with static charge to discharge. When discharging, the air is broken down, causing the air temperature and pressure at the breakdown position to increase. At this time, the air pressure inside the hollow steel ball 53 increases, causing the air inside the hollow steel ball 53 to flow outward through the exhaust hole 56. The airflow passes through the metal mesh cover 72 and is discharged through the annular exhaust groove 8, the communication hole 10, and the soot blowing groove 9. The discharged airflow blows towards the outer surface of the transparent lamp cover 2 through the soot blowing groove 9, thereby blowing off the dust that can adhere to the surface of the transparent lamp cover 2 to a certain extent and reducing the impact of dust on the lighting effect (the distance between the upper and lower groove walls of the annular exhaust groove 8 is less than 0.2 mm, the length, width, and height of the installation groove 52 are all less than 1 cm, and the diameter of the soot blowing groove 9 is less than 0.1 mm. Due to the small space of the installation groove 52 and the annular exhaust groove 8, when the static electricity breaks down the air, the air pressure increases instantaneously. At this time, the air pressure in the installation groove 52 and the annular exhaust groove 8 increases synchronously, enabling some air to be quickly discharged through the soot blowing groove 9 to ensure the cleaning effect on the dust);
[0040] Secondly, when the airflow with static charge passes through the metal mesh cover 72, since the metal mesh cover 72 is a conductor, electrostatic induction will occur. The free electrons in it move directionally to generate induced charges. According to the principle of like charges repelling and opposite charges attracting, and the electric field generated by the induced charges interacts with the static charge electric field. Coupled with the direct action of the electric field force on the static charge, the static charge in the airflow is subjected to a resultant force pointing to the metal mesh cover 72, and thus is attracted by the metal mesh cover 72. The static charge attracted by the metal mesh cover 72 passes through the conductive frame bar 71 at the bottom and the grounding pin 73 and is led out through grounding, thereby achieving the purpose of eliminating the static charge.
[0041] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.
Claims
1. A light emitting diode structure with electrostatic protection function, comprising an insulating base (1) and a transparent lampshade (2) mounted on the end surface of the insulating base (1), wherein a semiconductor light emitting component (3) is arranged inside the transparent lampshade (2), characterized in that: Also includes: A conductive ring (4) is fixedly sleeved on the outer side wall of the transparent lampshade (2), and the conductive ring (4) is fixedly connected to the top of the insulating base (1), and the outer side wall of the transparent lampshade (2) and the side wall of the insulating base (1) are both coated with a transparent conductive coating; An electrostatic breakdown unit (5) is installed at the bottom of the insulating base (1); the conductive ring (4) is installed with a conductive component (6); the conductive ring (4) guides static charge to the electrostatic breakdown unit (5) through the conductive component (6); The static electricity elimination unit (7) is installed on the inner side of the static electricity breakdown unit (5), and the static electricity elimination unit (7) conducts away the static electricity.
2. The light emitting diode structure with electrostatic protection function according to claim 1, characterized in that: The electrostatic breakdown unit (5) comprises an insulating block (51), a mounting groove (52) is provided at the bottom of the insulating base (1), and the insulating block (51) is fixedly connected to the notch of the mounting groove (52), a hollow steel ball (53) is fixedly installed on the end surface of the insulating block (51), a discharge cone (54) and a receiving cone (55) are arranged inside the hollow steel ball (53), the discharge cone (54) is installed on the top of the insulating block (51) and does not contact the hollow steel ball (53), the receiving cone (55) is installed on the inner wall of the hollow steel ball (53), and an exhaust hole (56) is provided on the side wall of the hollow steel ball (53).
3. The light emitting diode structure with electrostatic protection function according to claim 2, characterized in that: The conductive assembly (6) comprises two conductive rods (61), both of which are U-shaped, one end of each of which is fixedly connected to the outer wall of the conductive ring (4), and the ends of the two conductive rods (61) facing each other are fixedly connected to a conductive column (62), and the conductive column (62) penetrates the insulating block (51) and is fixedly connected to the bottom of the discharge cone (54).
4. The light emitting diode structure with electrostatic protection function according to claim 2, characterized in that: The static elimination unit (7) comprises a conductive frame strip (71) sleeved on the outside of the hollow steel ball (53), and the conductive frame strip (71) is fixedly mounted on the top of the insulating block (51), a metal mesh cover (72) is fixedly mounted on the top of the insulating block (51), and the hollow steel ball (53) is arranged inside the metal mesh cover (72), and a grounding pin (73) is fixedly plugged into the bottom of the insulating block (51), and both of the two grounding pins (73) are in contact with the conductive frame strip (71).
5. The light emitting diode structure with electrostatic protection function according to claim 1, characterized in that: The semiconductor light emitting component (3) comprises a reflective cone cover (31) arranged inside a transparent lampshade (2); an insulating heat-conducting base (32) is fixedly installed inside the reflective cone cover (31); a semiconductor light-emitting element (33) is installed on the top of the insulating heat-conducting base (32); conductive blocks (34) are arranged at positions on both sides of the reflective cone cover (31) inside the transparent lampshade (2); the two conductive blocks (34) are electrically connected to the semiconductor light-emitting element (33) through conductive wires; conductive pins (35) are fixedly installed at the bottoms of the two conductive blocks (34); and the lower ends of the two conductive pins (35) penetrate the insulating base (1) and extend to the bottom of the insulating base (1).
6. The light emitting diode structure with electrostatic protection function according to claim 2, characterized in that: The groove wall of the installation groove (52) is provided with an annular exhaust groove (8), the inner wall of the conductive ring (4) is provided with a plurality of soot blowing grooves (9), and the upper groove wall of the annular exhaust groove (8) is provided with a plurality of connecting holes (10), and each connecting hole (10) is connected to the soot blowing groove (9).
7. The light emitting diode structure with electrostatic protection function according to claim 5, characterized in that: The end surface of the insulating base (1) is integrally formed with a heat-conducting column (11), and the heat-conducting column (11) passes through the reflective cone cover (31) and is fixedly connected to the bottom of the insulating heat-conducting base (32), and a plurality of heat-dissipating columns (12) are fixedly mounted at the outer edge of the lower end of the insulating base (1).
8. The light emitting diode structure with electrostatic protection function according to claim 5, characterized in that: The outer side walls of the two conductive pins (35) are both fixedly sleeved with insulating sleeves (13), and the insulating sleeves (13) penetrate the end surface of the insulating base (1) and contact the bottom of the conductive block (34) on the same side.
Citation Information
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