Dual-band infrared thermometry method and temperature monitoring method and computing device

Abstract

The application provides a kind of dual-band infrared temperature measurement method and temperature monitoring method and computing device, the method comprises: determining the wavelength range corresponding to first temperature interval and second temperature interval, the first temperature interval and the second temperature interval include first temperature, second temperature and third temperature, the first temperature and the second temperature determine the first temperature interval, the second temperature and the third temperature determine the second temperature interval;Select fourth temperature in the first temperature interval and the second temperature interval;At the fourth temperature, change wavelength in the wavelength range, obtain the relationship curve of radiation intensity and radiation wavelength;Determine the selected wavelength on the relationship curve;The selected wavelength is used for the temperature measurement of the first temperature interval and the second temperature interval.According to the technical scheme of the application, more accurate dual-band measurement temperature is realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of temperature measurement, in particular to a dual-band infrared temperature measurement method, a temperature monitoring method and a computing device. BACKGROUND

[0002] Infrared temperature measurement technology is widely used in various fields due to its non-contact, fast temperature measurement speed, wide temperature measurement range and other advantages. In the process of metal smelting, thermocouples are often used for temperature measurement, although the method is simple, but it cannot measure temperature continuously, and the thermocouples may be melted in the metal, causing pollution and reducing the quality of the product.

[0003] The existing temperature reference is calibrated by the black body of the relevant measurement unit of the state. The black body is an object with the maximum emissivity and absorption rate, which does not exist in nature. The emissivity of various actual measured objects is smaller than that of the black body, so the emissivity correction needs to be performed.

[0004] The emissivity correction method started in the late nineteenth century and is still in use today. However, the existing emissivity correction method has difficulties in that the emissivity of the measured object changes with complex factors such as material composition, surface state, wavelength, radiation temperature, radiation conditions, and surrounding environment, making it difficult to give an accurate value, which also limits the temperature measurement accuracy of traditional infrared thermometers.

[0005] At present, the measurement accuracy of the emissivity correction method can only reach 1% of the temperature of the measured object. In addition, when there is a window or copper slag attached in front of the measured object, the emissivity correction method will also cause a large error in temperature measurement.

[0006] Therefore, a technical solution is needed to achieve high-precision infrared temperature measurement. SUMMARY

[0007] The present application aims to provide a dual-band infrared temperature measurement method, a temperature monitoring method and a computing device, to achieve dual-band temperature measurement and meet the high-precision temperature measurement.

[0008] According to one aspect of the present application, a dual-band infrared temperature measurement method is provided. The method comprises:

[0009] determining a wavelength range corresponding to a first temperature interval and a second temperature interval, the first temperature interval and the second temperature interval comprising a first temperature, a second temperature and a third temperature, the first temperature and the second temperature determining the first temperature interval, and the second temperature and the third temperature determining the second temperature interval;

[0010] selecting a fourth temperature within the first temperature interval and the second temperature interval;

[0011] At the fourth temperature, the wavelength is varied within the wavelength range to obtain a curve showing the relationship between radiation intensity and radiation wavelength.

[0012] Determine the selected wavelength on the relationship curve;

[0013] The selected wavelength is used for temperature measurement in the first temperature range and the second temperature range.

[0014] According to some embodiments, the relationship curve between radiation intensity and radiation wavelength is obtained, including: plotting the relationship curve between radiation intensity and radiation wavelength by actual measurement at the fourth temperature.

[0015] According to some embodiments, the relationship curve between radiation intensity and radiation wavelength is obtained, including:

[0016] At the fourth temperature, the radiation intensity of the first wavelength and the second wavelength are obtained respectively, and the first set of parameter values ​​in the radiation formula are solved.

[0017] By changing the wavelength, the relationship curve between radiation intensity and radiation wavelength can be obtained based on the first set of parameters in the radiation formula;

[0018] The radiation intensity at the first wavelength and the second wavelength are obtained respectively, and the correspondence between radiation intensity and radiation wavelength is obtained through calculation formula;

[0019] The third wavelength for temperature measurement is determined by measuring the radiation intensity and wavelength in the first temperature range.

[0020] The relationship between radiation intensity and temperature is calculated using the third wavelength.

[0021] According to some embodiments, the radiation formula is:

[0022] ∮(λ, T)=αλ -5 ﹝exp(β / λT)-1﹞ -1

[0023] In the formula, ∮(λ, T) is the radiation intensity, λ is the radiation wavelength, T is the temperature value, α and β are parameters, and the unit of α is watt-cm. 2 β is measured in centimeters per kilometer (cm·K).

[0024] According to some embodiments, determining a selected wavelength on the relationship curve includes:

[0025] The wavelength corresponding to the point on the relationship curve where the product of curvature and the rate of change of curvature is minimized is determined as the selected wavelength.

[0026] According to some embodiments, using the selected wavelength for temperature measurement in the first temperature range and the second temperature range includes:

[0027] At the selected wavelength, the radiation intensity corresponding to the fifth and sixth temperatures within the first and second temperature ranges is obtained, and the second set of parameter values ​​used in the radiation formula is solved.

[0028] At the selected wavelength, the temperature is determined based on the measured radiation intensity according to the second set of parameter values ​​in the radiation formula.

[0029] According to some embodiments, using the selected wavelength for temperature measurement in the first temperature range and the second temperature range includes: determining the corresponding temperature at the selected wavelength based on the measured radiation intensity using pre-calibrated parameter values.

[0030] According to some embodiments, the first temperature range is 600℃~1000℃, the second temperature range is 1000℃~3000℃, and the selected wavelength is 1.1 micrometers.

[0031] According to another aspect of the present invention, a method for temperature monitoring in semiconductor manufacturing or sintering processes is provided, including the dual-band infrared thermometry method as described in any of the preceding claims.

[0032] According to another aspect of the present invention, a computing device is provided, comprising:

[0033] Processor; and

[0034] A memory storing a computer program that, when executed by the processor, causes the processor to perform the method described in any of the preceding methods.

[0035] According to embodiments of the present invention, determining the wavelength range corresponding to the first and second temperature ranges, and selecting an appropriate wavelength range according to different temperature ranges, ensures that the most accurate radiation signal can be captured within each temperature range. Clearly defining the first, second, and third temperatures to divide the temperature ranges helps to refine the temperature measurement requirements, making subsequent wavelength selection more precise. Selecting a fourth temperature within the first and second temperature ranges, and obtaining the radiation intensity versus wavelength curve at the selected fourth temperature, provides practical data support, rather than relying solely on theoretical calculations. By analyzing the relationship curve, the most suitable wavelength at that temperature can be found, thereby improving temperature measurement accuracy.

[0036] By acquiring the radiation intensity at the first and second wavelengths respectively, the relationship between radiation intensity and wavelength is derived through calculation formulas. Considering that the emissivity of different materials may vary at different wavelengths, multi-wavelength measurement can more accurately reflect the radiation characteristics of actual objects and reduce errors caused by inaccurate emissivity estimation when measuring with a single wavelength. Furthermore, by measuring the radiation intensity and wavelength within the first temperature range, a third wavelength for temperature measurement is determined, thereby calculating the relationship between radiation intensity and temperature to achieve more precise temperature measurement.

[0037] According to some embodiments, the first temperature range includes a second temperature range and a third temperature range to form a dual-band temperature measurement range. By selecting an appropriate wavelength for measurement in the dual-band temperature measurement range, the actual radiation situation under each temperature range can be captured more accurately, thereby improving the temperature measurement accuracy.

[0038] According to some embodiments, dual-band temperature is calculated by formulas in which parameters are determined by actual measured data rather than relying on theoretical models or average emissivity values. Therefore, the relationship between radiation intensity and temperature obtained at a selected wavelength can achieve high-precision temperature measurement.

[0039] It should be understood that the above general description and the following detailed description are merely exemplary and do not limit the invention. Attached Figure Description

[0040] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below.

[0041] Figure 1 A flowchart of a method for dual-band infrared thermometry according to an example embodiment is shown.

[0042] Figure 2 A graph showing the radiation wavelength and relative radiation intensity according to some embodiments is shown.

[0043] Figure 3A A schematic diagram showing the variation of radiation intensity with temperature in a certain temperature range according to some embodiments is shown.

[0044] Figure 3B A schematic diagram showing the variation of radiation intensity with temperature in the high-temperature range according to some embodiments is shown.

[0045] Figure 4 A schematic diagram of a dual-band infrared temperature measurement system according to an example embodiment is shown.

[0046] Figure 5 A block diagram of a computing device according to an exemplary embodiment is shown. Detailed Implementation

[0047] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, they are provided so that the invention will be thorough and complete, and the concept of the exemplary embodiments will be fully conveyed to those skilled in the art. The same reference numerals in the drawings denote the same or similar parts, and therefore repeated descriptions of them will be omitted.

[0048] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a full understanding of embodiments of the invention. However, those skilled in the art will recognize that the technical solutions of the invention can be practiced without one or more of the specific details, or other methods, components, apparatuses, steps, etc., can be employed. In other instances, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of the invention.

[0049] The block diagrams shown in the accompanying drawings are merely functional entities and do not necessarily correspond to physically independent entities. That is, these functional entities can be implemented in software, in one or more hardware modules or integrated circuits, or in different network and / or processor devices and / or microcontroller devices.

[0050] The flowcharts shown in the accompanying drawings are merely illustrative and do not necessarily include all content and operations / steps, nor do they necessarily have to be performed in the described order. For example, some operations / steps can be broken down, while others can be combined or partially combined; therefore, the actual execution order may change depending on the specific circumstances.

[0051] It should be understood that although the terms first, second, third, etc., may be used herein to describe various components, these components should not be limited by these terms. These terms are used to distinguish one component from another. Therefore, the first component discussed below may be referred to as the second component without departing from the teachings of the present invention. As used herein, the term "and / or" includes all combinations of any one and more of the associated listed items.

[0052] The user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) involved in this invention are all information and data authorized by the user or fully authorized by all parties. Furthermore, the collection, use and processing of related data must comply with the relevant laws, regulations and standards of the relevant countries and regions, and corresponding operation entry points are provided for users to choose to authorize or refuse.

[0053] Those skilled in the art will understand that the accompanying drawings are merely schematic diagrams of exemplary embodiments, and the modules or processes in the drawings are not necessarily essential for implementing the present invention, and therefore cannot be used to limit the scope of protection of the present invention.

[0054] Infrared thermometry has been used for many years, but the measurement accuracy of current technology is not high. For example, when measuring molten steel at 1500℃, the measurement error is between 10-15℃, reaching 1% of the measured value. Another problem with infrared thermometry is that the physical properties and technical implementation methods differ across different temperature ranges. Therefore, the measurement must be divided into two segments: medium temperature and high temperature.

[0055] Existing temperature standards are all calibrated using blackbodies from relevant national metrology units. A blackbody is an object with maximum emissivity and absorptivity. The emissivity of various actual objects being measured is lower than that of a blackbody, so emissivity correction is necessary.

[0056] The physical model of an ideal blackbody is described by Planck's formula:

[0057] W(λ,T)=C1λ -5 ﹝exp(C2 / λT)-1﹞ -1

[0058] In the formula, W(λ, T) is the blackbody radiation spectral power intensity, with units of watt-cm. 2 · micrometer -1 C1 = 3.74 × 10 -12 The first radiation constant, in watt-cm. 2 C² = 1.43 is the second radiation constant, in centimeters per kilometer (cm·K). λ is the wavelength of the spectral radiation, in micrometers. T is the blackbody temperature, in K.

[0059] In Planck's temperature formula, C1 and C2 are two constants applicable only when the radiating body is a blackbody. At any temperature, the power of blackbody radiation varies continuously with wavelength. As temperature increases, the wavelength corresponding to the maximum radiative power decreases, indicating that with increasing temperature, the proportion of short-wavelength components in blackbody radiation increases. This radiation characteristic is independent of the material of the blackbody and depends only on its absolute temperature.

[0060] The actual spectral radiation power intensity of the measured object is less than the W(λ, T) value mentioned above, and its value is difficult to give accurately, which limits the accuracy of temperature measurement.

[0061] In addition to the low accuracy of temperature measurement, it is also difficult to effectively connect the emissivity correction values ​​between different temperature ranges. For example, dual-band temperature measurement cannot be achieved between medium temperature (600℃~1000℃) and high temperature (>1000℃), which is why current traditional temperature measuring instruments are all segmented.

[0062] The inventors discovered that these two constants can be changed into variables that vary with factors such as the material composition, properties, and shape of the radiator, and the concept of the emissivity coefficient as a parameter is introduced. The temperature measurement formula still retains the core of Planck's formula, that is, the temperature measurement formula according to the present invention is a creative extension of Planck's formula.

[0063] To address this issue, the present invention proposes a dual-band infrared temperature measurement method to solve the problem of continuous temperature measurement in the medium and high temperature ranges, thereby achieving high-precision temperature measurement.

[0064] Before describing the embodiments of the present invention, some terms or concepts involved in the embodiments of the present invention will be explained.

[0065] The aperture distance factor (D / S) refers to the ratio of the distance (D) between the measuring device and the target object to the diameter (S) of the target object.

[0066] The following description, in conjunction with the accompanying drawings, illustrates exemplary embodiments of the present invention.

[0067] Traditional infrared thermometry methods determine temperature based on the spectral radiative power of blackbody radiation calibrated at a certain temperature. Typically, the aperture distance factor (D / S), which is the ratio of the distance between the detector and the target to the target diameter, needs to be considered to ensure measurement accuracy.

[0068] Due to limitations in their detection mechanisms, most thermal detectors have slow response times and low detection rates, making them unable to quickly and accurately detect, identify, and track high-speed moving targets. This limits their application in fields where high detection speed is required.

[0069] This invention determines temperature based on the radiation received by the temperature measuring device. By directly measuring the received radiant energy, it reduces dependence on the aperture distance coefficient and allows for the acquisition of the actual object's radiant power intensity at the temperature measurement site. Temperature can be calculated directly from the true radiative characteristics of the object being measured, rather than relying entirely on theoretical models or calibration results under laboratory conditions. This is particularly suitable for materials whose emissivity is difficult to determine accurately or whose emissivity varies with temperature.

[0070] The method of this invention can achieve dual-color detection (dual-band detection) without the need for a complicated dual-color detector manufacturing process.

[0071] Figure 1 A flowchart of a method for dual-band infrared thermometry according to an example embodiment is shown.

[0072] See Figure 1 In S101, the wavelength range corresponding to the first temperature range and the second temperature range is determined.

[0073] According to the example embodiment, the first temperature range and the second temperature range include a first temperature, a second temperature and a third temperature, the first temperature and the second temperature determine the first temperature range, and the second temperature and the third temperature determine the second temperature range.

[0074] According to some embodiments, the first temperature range is 600℃~1000℃, the second temperature range is 1000℃~3000℃, and the selected wavelength is 1.1 micrometers. The second temperature range represents the medium temperature range, the third temperature range represents the high temperature range, and the wavelengths of the second temperature range and the third temperature range constitute a dual-band temperature measurement range.

[0075] In S103, a fourth temperature is selected within the first temperature range and the second temperature range.

[0076] At the fourth temperature, the radiation intensity of the first wavelength and the second wavelength are obtained respectively. The first set of parameter values ​​in the radiation formula are solved. The obtained radiation intensity of the first wavelength and the second wavelength are used to calculate the correspondence between radiation intensity and radiation wavelength.

[0077] According to the example embodiment, the correspondence between radiation intensity and radiation wavelength is calculated according to the following formula ①, where the radiation formula is:

[0078] ∮(λ, T)= α λ -5 ﹝exp ( β / λT )-1﹞ -1 ①

[0079] In the formula, ∮(λ, T) is the radiation intensity, λ is the radiation wavelength, T is the temperature value, α and β are parameters, and the unit of α is watt-cm. 2 β is measured in centimeters per kilometer (cm·K).

[0080] The coefficients α and β are parameters that depend on factors such as the material composition and properties of the object and the wavelength of radiation; they are also referred to as emissivity coefficients in this paper.

[0081] In S105, at the fourth temperature, the wavelength is changed within the wavelength range to obtain a curve showing the relationship between radiation intensity and radiation wavelength.

[0082] According to some embodiments, a curve relating radiation intensity to radiation wavelength is plotted by actual measurement at the fourth temperature. At the fourth temperature, the radiation intensity at a first wavelength and a second wavelength are obtained respectively, and the first set of parameter values ​​in the radiation formula is solved. By changing the wavelength, the curve relating radiation intensity to radiation wavelength is obtained based on the first set of parameter values ​​in the radiation formula.

[0083] With a constant temperature T, within the specified wavelength range, changing the wavelength λ yields the relationship between radiation intensity and wavelength. The radiation intensities at the first and second wavelengths are obtained respectively. The correspondence between radiation intensity and wavelength is derived using the calculation formula. Substituting these values ​​into the calculation formula ①, parameters α and β are solved to obtain the corresponding relationship between radiation intensity and wavelength.

[0084] Substituting the radiation intensity at two different wavelengths into formula ①, we get:

[0085] ∮1(λ1, T)=αλ1 -5 ﹝exp(β / λT)-1﹞ -1 ②

[0086] ∮2(λ2, T)=αλ2 -5 ﹝exp(β / λT)-1﹞ -1 ③

[0087] Where ∮1 is the radiation intensity of the radiating object when the radiation wavelength is λ1; and ∮2 is the radiation intensity of the radiating object when the radiation wavelength is λ2.

[0088] By combining equations ② and ③ above, we can solve for the parameters α1 and β1 that vary with wavelength.

[0089] By measuring the radiation intensity and wavelength in the first temperature range, a third wavelength for temperature measurement is determined, and the correspondence between radiation intensity and temperature is calculated using the third wavelength.

[0090] Both the first and second wavelengths are applicable to the first temperature range. The parameters α1 and β1, which vary with wavelength, obtained by solving for the radiation intensity of an object passing through the first and second wavelengths, are substituted into formula ① to obtain the corresponding relationship between radiation intensity and radiation wavelength at a given temperature.

[0091] In S107, the selected wavelength on the relationship curve is determined.

[0092] According to some embodiments, the wavelength corresponding to the point on the relationship curve where the product of curvature and the rate of change of curvature is minimum is determined as the selected wavelength.

[0093] By measuring the radiation intensity and wavelength in the first temperature range, a third wavelength for temperature measurement is determined. At this third wavelength, the change in radiation intensity is smoother, without singularities, making it more suitable for dual-band temperature measurement.

[0094] In S109, the selected wavelength is used for temperature measurement in the first temperature range and the second temperature range.

[0095] According to some embodiments, at the selected wavelength, the radiation intensity corresponding to the fifth and sixth temperatures within the first and second temperature ranges is obtained, a second set of parameter values ​​for the radiation formula is solved, and at the selected wavelength, the corresponding temperature is determined based on the measured radiation intensity according to the second set of parameter values ​​of the radiation formula.

[0096] At the selected wavelength, the corresponding temperature is determined based on the measured radiation intensity using pre-calibrated parameter values. According to some embodiments, multiple sets of second parameter values ​​can be obtained from multiple temperatures and stored in a database. During actual temperature measurement, the corresponding second set of parameter values ​​can be retrieved from the database based on the measured temperature and temperature changes for temperature calculation.

[0097] The relationship between radiation intensity and temperature is calculated using the third wavelength.

[0098] According to the example embodiment, the correspondence between radiation intensity and temperature is calculated using the third wavelength. When the actual object temperature is measured to be T1, the measured object radiation intensity is ∮1(λ, T1). When the object temperature is changed to T2, the radiation intensity is obtained as ∮2(λ, T2). Substituting these values ​​into formula ④, we get:

[0099] ∮(λ, T)=aλ -5 ﹝exp(b / λT)-1﹞ -1 ④

[0100] In the formula, ∮(λ, T) is the radiation intensity, λ is the third wavelength, T is the temperature value, a and b are parameters, and the unit of a is watt-cm. 2 The unit of b is centimeters per kilometer (cm·K).

[0101] The values ​​of coefficients a and b vary with the material composition, shape, temperature, and measurement wavelength of the object being measured.

[0102] Let ∮1(λ, T1) = aλ -5 ﹝exp(b / λT1)-1﹞ -1 and ∮2(λ, T2)=aλ -5 ﹝exp(b / λT2)-1﹞ -1 By combining the equations, we can solve for the emissivity parameters a and b.

[0103] Substituting the values ​​of parameters a1 and b1 obtained from the above calculations for the measured object back into formula ④, we obtain the corresponding relationship between the radiation intensity and temperature of the measured object at the measured third wavelength:

[0104] ∮(λ, T)=a1λ -5 ﹝exp(b1 / λT)-1﹞ -1

[0105] Although this embodiment is based on Planck's blackbody radiation law, it takes into account the difference between real objects and ideal blackbodies. By using the known relationship between radiation intensity and temperature, the emissivity parameters (a1, b1) of the object under test are determined, effectively utilizing the infrared radiation characteristics to accurately measure the state of various materials at different temperatures, thus achieving more accurate temperature measurement.

[0106] Considering that temperature measurement in existing technologies is performed in segments, it is difficult to effectively connect the emissivity correction values ​​between different temperature segments. This example embodiment takes into account both the medium temperature segment and the high temperature segment to solve the segmentation problem of temperature measurement and realize dual-band temperature measurement.

[0107] Figure 2 A graph showing the radiation wavelength and relative radiation intensity according to some embodiments is shown.

[0108] The relationship between radiation intensity and temperature is calculated using the third wavelength, and the radiation intensity distribution from the second temperature range to the third temperature range is plotted. The change in radiation intensity is less than the first value, thus realizing dual-band temperature measurement.

[0109] According to some embodiments, for temperature measurement in the medium temperature range (e.g., 600℃~1000℃) and the high temperature range (e.g., 1000℃~3000℃), the radiation peak of the radiating object shifts towards the short wavelength direction as the temperature of the radiating object increases. Based on the actual conditions at the temperature measurement site, the measurement wavelength variation range for medium and high temperatures (600℃~3000℃) is determined to be from 0.9 micrometers to 1.5 micrometers.

[0110] According to some embodiments, the radiation intensity varies at different radiation wavelengths, gradually decreasing as the wavelength increases. The radiation intensity distribution from the second temperature range to the third temperature range is plotted, the third wavelength is determined by the relative radiation intensity distribution, and then the correspondence between radiation intensity and temperature is calculated using the third wavelength.

[0111] See Figure 2 By measuring the radiation intensity and wavelength from 0.9 micrometers to 1.5 meters in the first temperature range, the radiation wavelength and relative radiation intensity values ​​were recorded. The variation trend of radiation wavelength and relative radiation intensity was plotted, and it was determined that the change of radiation intensity at a wavelength of 1.1 micrometers was smoother, without singularities or obvious singularities or abrupt changes.

[0112] In the first temperature range, the high-temperature segment is at a wavelength of 1.1 micrometers, where the temperature changes from 600℃ to 3000℃. The change in radiation intensity is less than the first value, meaning the change in radiation intensity can be controlled within 10. 4 Within this range, dual-band temperature measurement is achieved. This means that at this wavelength, the change in radiation intensity with temperature is more continuous and stable.

[0113] Figure 3A This diagram illustrates how radiation intensity changes with temperature in the mid-temperature range.

[0114] Figure 3B This diagram illustrates how radiation intensity changes with temperature in the high-temperature range.

[0115] According to the example embodiment, in the case of a fixed wavelength, Figure 3A The diagram shows a temperature measurement range of 800K-1400K. The horizontal axis represents temperature (in K), and the vertical axis represents radiation intensity (in W / m²). 2 The radiation intensity ranges from 0 to 16 × 10⁻⁶ μm (·sr·μm). 10 Between these two extremes, radiation intensity increases exponentially with increasing temperature. At lower temperatures, the increase in radiation intensity is relatively gradual, while at higher temperatures, the rate of increase accelerates significantly.

[0116] Figure 3B This diagram illustrates temperature measurements from 1373K to 3273K. The horizontal axis represents temperature (in K), and the vertical axis represents radiation intensity (in W / m²). 2 The radiation intensity ranges from approximately 0 to 4.5 × 10⁻⁶ μm (·sr·μm). 13 Similarly, as temperature increases, radiation intensity exhibits an exponential growth trend. Within the high-temperature range, the increase in radiation intensity is more significant, especially near 3273K, where the growth rate is very rapid.

[0117] The solved formula can effectively utilize infrared radiation characteristics to accurately measure the state of various materials at different temperatures, achieving more accurate temperature measurement. Table 1 shows the measured results of the thermometer according to the technical solution of the present invention.

[0118] Table 1

[0119] Standard temperature point / °C Measured output value / °C Inherent error Expanded uncertainty U / C (k = 2) 1200 1199.9 -0.1 2.8 1250 1250.3 0.3 3.0

[0120] As can be seen from this table, the measured output values ​​are very close to the temperature values ​​at the standard temperature point, with an expanded uncertainty between 2.8 and 3.0. Although not zero, this uncertainty is relatively small, indicating high reliability of the measurement results. The technical solution of this invention has very good measurement accuracy, which is crucial for industrial applications requiring precise temperature control.

[0121] Figure 4 A schematic diagram of a dual-band infrared temperature measurement system according to an example embodiment is shown.

[0122] According to an example embodiment, the dual-band infrared temperature measurement system includes a sensor assembly 101, a computing unit 103, and a storage unit 105. The sensor assembly 101 is used to measure radiation intensity, the computing unit 103 is used to receive radiation intensity data from the sensor assembly 101, and the storage unit 105 is communicatively connected to the computing unit 103, and is used to store the radiation intensity of the sensor assembly 101 and the temperature calculation results of the computing unit 103.

[0123] The sensor assembly 101 consists of a photoelectric converter and an analog-to-digital converter. The photoelectric converter monitors the temperature distribution of the furnace body, and the radiation intensity is directly received by the photoelectric converter and converted into an electrical signal. The analog-to-digital converter processes and converts the electrical signal from the photoelectric converter, transforming the analog signal generated by the photoelectric converter into a more easily processed form.

[0124] According to the example embodiment, the calculation unit calculates the dual-band temperature using a formula, first using the following formula:

[0125] ∮(γ, T)=αγ -5 [exp(β / γT)-1] -1

[0126] In the formula, ∮(γ, T) is the radiation intensity of the two bands, γ is the radiation wavelength, T is the temperature value, α and β are parameters, and the unit of α is watt-cm. 2 β is in centimeters per kilometer (cm·K), where the radiation wavelength γ is determined according to the temperature measurement range.

[0127] In this example embodiment, the α and β parameters are variable coefficients, which vary with the temperature of the outer surface and the wavelength of radiation. The values ​​of α and β also change across different temperature ranges.

[0128] According to some embodiments, the process of determining α and β involves obtaining the object radiation intensity at the first wavelength and the second wavelength, ∮1(λ1,T) and ∮2(λ2,T), respectively, while keeping the temperature T constant. Substituting these values ​​into the calculation formula ①, the parameters α and β are solved to obtain the correspondence between the radiation intensity and the radiation wavelength.

[0129] The relative radiation intensity distribution is then plotted using the solved formula. The wavelength λ, which is least affected by temperature fluctuations, is determined and denoted as the third wavelength. The relationship between radiation intensity and temperature is then calculated using this third wavelength, as shown in the following formula:

[0130] ∮(λ, T)=aλ -5 ﹝exp(b / λT)-1﹞ -1

[0131] In the formula, ∮(λ, T) is the radiation intensity, λ is the third wavelength, T is the temperature value, a and b are parameters, and the unit of a is watt-cm. 2 The unit of b is centimeters per kilometer (cm·K).

[0132] The values ​​of parameters a and b vary with the material composition, shape, temperature, and measurement wavelength of the object being measured.

[0133] When the object's temperature is T1, the measured radiation intensity is ∮1(λ, T1). When the object's temperature is T2, the measured radiation intensity is ∮2(λ, T2). Let ∮1(λ, T1) = aλ -5 ﹝exp(b / λT1)-1﹞ -1 and ∮2(λ, T2)=aλ -5 ﹝exp(b / λT2)-1﹞ -1 By combining the equations, the emissivity parameters a and b can be solved. The resulting formulas can effectively utilize infrared radiation characteristics to accurately measure the state of various materials at different temperatures, achieving more precise temperature measurements.

[0134] The dual-band temperature system proposed in this invention can be applied to methods for monitoring semiconductor process temperature or sintering process temperature. The dual-band temperature measurement can be selected according to different processing scenarios based on different temperatures. For example, the medium-temperature band is used in many industrial process control and material processing fields, while the high-temperature band is suitable for calcining furnaces such as metal smelting. Users can design a suitable temperature measurement scheme based on the actual situation on site.

[0135] The dual-band temperature measurement system of this invention applied to calcining furnaces is unaffected by harsh on-site environments, reduces interference from dust and smoke on data acquisition, and can achieve high-precision temperature measurement.

[0136] Figure 5 A block diagram of a computing device according to an exemplary embodiment is shown.

[0137] like Figure 5 As shown, the computing device 30 includes a processor 12 and a memory 14. The computing device 30 may also include a bus 22, a network interface 16, and an I / O interface 18. The processor 12, memory 14, network interface 16, and I / O interface 18 can communicate with each other via the bus 22.

[0138] Processor 12 may include one or more general-purpose CPUs (Central Processing Units), microprocessors, or application-specific integrated circuits, for executing relevant program instructions. According to some embodiments, computing device 30 may also include a high-performance display adapter (GPU) 20 for accelerating processor 12.

[0139] Memory 14 may include a machine-readable medium in the form of volatile memory, such as random access memory (RAM), read-only memory (ROM), and / or cache memory. Memory 14 is used to store one or more programs containing instructions, as well as data. Processor 12 may read the instructions stored in memory 14 to perform the methods described above according to embodiments of the present invention.

[0140] The computing device 30 can also communicate with one or more networks via the network interface 16. The network interface 16 can be a wireless network interface.

[0141] Bus 22 can include address bus, data bus, control bus, etc. Bus 22 provides a path for exchanging information between components.

[0142] It should be noted that, in specific implementations, the computing device 30 may also include other components necessary for normal operation. Furthermore, those skilled in the art will understand that the device described above may only include the components necessary for implementing the embodiments of this specification, and not necessarily all the components shown in the figures.

[0143] The present invention also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the above-described method. The computer-readable storage medium may include, but is not limited to, any type of disk, including floppy disks, optical disks, DVDs, CD-ROMs, microdrives, as well as magneto-optical disks, ROMs, RAMs, EPROMs, EEPROMs, DRAMs, VRAMs, flash memory devices, magnetic cards or optical cards, nanosystems (including molecular memory ICs), network storage devices, cloud storage devices, or any type of medium or device suitable for storing instructions and / or data.

[0144] This invention also provides a computer program product comprising a non-transitory computer-readable storage medium storing a computer program operable to cause a computer to perform some or all of the steps of any of the methods described in the above method embodiments.

[0145] Those skilled in the art will clearly understand that the technical solutions of the present invention can be implemented by means of software and / or hardware. In this specification, "unit" and "module" refer to software and / or hardware capable of independently performing or cooperating with other components to perform a specific function, wherein the hardware may be, for example, a field-programmable gate array (FPGA), an integrated circuit, etc.

[0146] It should be noted that, for the sake of simplicity, the foregoing method embodiments are all described as a series of actions. However, those skilled in the art should understand that the present invention is not limited to the described order of actions, because according to the present invention, some steps can be performed in other orders or simultaneously. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are preferred embodiments, and the actions and modules involved are not necessarily essential to the present invention.

[0147] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0148] In the several embodiments provided by this invention, it should be understood that the disclosed apparatus can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some service interface; the indirect coupling or communication connection between devices or units may be electrical or other forms.

[0149] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0150] Furthermore, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0151] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage device. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a memory and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods of the various embodiments of the present invention.

[0152] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0153] Exemplary embodiments of the present invention have been specifically shown and described above. It should be understood that the present invention is not limited to the detailed structures, arrangements, or implementations described herein; rather, the present invention is intended to cover various modifications and equivalent arrangements contained within the spirit and scope of the appended provisions.

Claims

1. A method for dual-band infrared thermometry, characterized in that, include: Determine the wavelength range corresponding to the first temperature range and the second temperature range, wherein the first temperature range and the second temperature range include a first temperature, a second temperature and a third temperature, the first temperature and the second temperature determine the first temperature range, and the second temperature and the third temperature determine the second temperature range; Select a fourth temperature within the first temperature range and the second temperature range; At the fourth temperature, the wavelength is varied within the specified wavelength range to obtain a curve relating radiation intensity to radiation wavelength. At the fourth temperature, the radiation intensity at the first and second wavelengths is obtained respectively. The first set of parameter values ​​in the radiation formula is then calculated. Based on the first set of parameter values ​​in the radiation formula, the curve relating radiation intensity to radiation wavelength is obtained. The radiation formula is: ∮(λ, T) = αλ -5 ﹝exp ( β / λT )-1﹞ -1 In the formula, ∮(λ, T) is the radiation intensity, λ is the radiation wavelength, T is the temperature value, α and β are parameters, and the unit of α is watt-cm. 2 β is measured in centimeters per kilogram (cm·K). Determine a selected wavelength on the relationship curve, and determine the wavelength corresponding to the point on the relationship curve where the product of curvature and the rate of change of curvature is minimized as the selected wavelength; The selected wavelength is used for temperature measurement in the first temperature range and the second temperature range.

2. The method according to claim 1, characterized in that, Obtain the relationship curve between radiation intensity and radiation wavelength, including: plotting the relationship curve between radiation intensity and radiation wavelength by actual measurement at the fourth temperature.

3. The method according to claim 1, characterized in that, Using the selected wavelength for temperature measurement in the first temperature range and the second temperature range includes: At the selected wavelength, the radiation intensity corresponding to the fifth and sixth temperatures within the first and second temperature ranges is obtained, and the second set of parameter values ​​used in the radiation formula is solved. At the selected wavelength, the temperature is determined based on the measured radiation intensity according to the second set of parameter values ​​in the radiation formula.

4. The method according to claim 1, characterized in that, Using the selected wavelength for temperature measurement in the first temperature range and the second temperature range includes: determining the corresponding temperature at the selected wavelength based on the measured radiation intensity using pre-calibrated parameter values.

5. The method according to claim 1, characterized in that, The first temperature range is 600℃~1000℃, the second temperature range is 1000℃~3000℃, and the selected wavelength is 1.1 micrometers.

6. A method for temperature monitoring in semiconductor manufacturing or sintering processes, characterized in that, Includes the method according to any one of claims 1-5.

7. A computing device, characterized in that, include: processor; as well as A memory storing a computer program that, when executed by the processor, causes the processor to perform the method as described in any one of claims 1-5.

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